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PDF
Datasheet.pdf
Breakdown Voltage G = - 1.0 A, VDS= 0 - 35 V M I GateReverseCurrent V = - 15 V, V = 0 - 1.0 nA GSS GS DS M V GS(off) Gate-Source Cutoff Voltage V DS = 5.0 V,DI = 1.0 A J111 - 3.0 - 10 V B J112 - 1.0 - 5.0 V - 0.5 - 3.0 V F J113 J ID(off) Gate-Source Cutoff Voltage V DS = 5.0 V, GS = - 10 V 1.0 nA 1 1 1
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PDF
LND150_C041114.pdf
25V R DS(ON) Static drain-to-source on-state resistance - 850 1000 Ω V GS= 0V, ID= 0.5mA ΔR Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) Ω GS D G Forward transductance 1.0 2.0 - m
in „DDR- Mosfet SM104 in Sinusgenerator GF22“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds1822.c
DS1822_PIN = 1; // Bus hoch delay_us(5); // Warten bis Slave reagiert DS1822_DIR = 1; // Jetzt Bus auf Antwort prüfen to = 300; while (DS1822_PIN) { if (--to==0) return(0); delay_us(1); } delay_us(480);
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PDF
IRLR6225PBF_NMOS.pdf
PD-97594 IRLR6225PbF ® HEXFET Power MOSFET V 20 V DS R D D DS(on) max 4.0 mΩ (@V GS= 4.5V) R DS(on) max 5.2 S (@V GS= 2.5V) mΩ G G Q g (typical) 48 nC D-Pak S IRLR6225PbF RG (typical) 2.2 Ω D 42 h A G D S Gate Drain Source Applications • Battery Protection
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APM2601.pdf
Symbol Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BV DSS V GSV , I DS250µA -20 V Voltage Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.45 -1.2 V I Gate Leakage Current V =±8V , V =0V ±100 nA GSS GS DS
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IRF4905.pdf
Drain-to-Source On-Resistanc 0.02 Ω VGS= -10V, D = -38A VGS(th) Gate Threshold Voltage -2.0 -4.0 V V DS= VGS ,DI = -250µA gfs Forward Transconductance 21 S V DS= -25V, D = -38A I Drain-to-Source Leakage Current -25 µA VDS= -55V, VGS = 0V DSS -250 VDS= -44V, VGS= 0V, TJ= 150°C I Gate-to-Source Forward Leakage
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mt9v403_ds.pdf
) ) ) DATA [9:0] XXX Row Row XXX Row Row XXX Row Row Row XXX Row Row Row Row Row Row Row (output) 300 301 ( ( N-1 N ( ( 397 398 399 300 301 ( ( N-1 N ( ( 397 398 399 ) ) ) ) ) ) ) ) Start Stop Row Row 09005aef80c07280 Micron Technology, Inc., reserves the right to change products or specifications without
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PDF
AL5801.pdf
1,000 PULSE WIDTH (s) Figure 4 Transient Thermal Impedance AL5801 4 of 11 July 2012 Document number: DS35555 Rev. 3 - 2 www.diodes.com © Diodes Incorporated AL5801 Typical Performance Characteristics 0.40 400 bias 0.1mA I = 0.1mA 0.35 R = 1.6Ω 350 bias EXT 0.30 300 0.25 250 A A m T 0.20 ( 200 U U I IO
in „Suche Konstantstromquelle effizient, klein und günstig.“ · Analoge Elektronik und Schaltungstechnik ·
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BME680.pdf
reserved |Data subject not change without notice | Printed in Germany Document number: BST-BME680-DS001-00 Revision_1.0_072017 Bosch Sensortec | BME680 Datasheet 43 | 50 7.3 Package dimensions Picture 13: Package dimensions for top, bottom and side view Document number: BST-BME680-DS001-00 Revision_
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PDF
BME680.pdf
reserved |Data subject not change without notice | Printed in Germany Document number: BST-BME680-DS001-00 Revision_1.0_072017 Bosch Sensortec | BME680 Datasheet 43 | 50 7.3 Package dimensions Picture 13: Package dimensions for top, bottom and side view Document number: BST-BME680-DS001-00 Revision_
in „BME680 Berechnung Temperatur Luftfeuchtigkeit Druck Gas Fragen Initialisierung Assembler ASM ATmega8“ · Mikrocontroller und Digitale Elektronik ·
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IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
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IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
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irfiz34n.pdf
On-Resistance 0.04 Ω VGS = 10V, D = 11A V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 6.5 S VDS = 25V, D = 16A 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 250 VDS = 44V, VGS= 0V, TJ= 150°C Gate-to-Source Forward Leakage 100 V = 20V
in „Mosfet Treiber Baustein“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
B--0193_DS18B20_Nr27_29_30_31_Rest32_33_34_b.h
char temp30_lesen(void); unsigned char temp31_lesen(void); //unsigned char temp33_lesen(void); int ds18b20_nr27_lesen(void); int ds18b20_nr29_lesen(void); int ds18b20_nr30_lesen(void); int ds18b20_nr31_lesen(void); //void temp30_ausgeben(void); //void temp31_ausgeben(void); //void temperatur_messen(void
in „Sende/Empfangsvorgang mittels nur 1St. µC“ · Mikrocontroller und Digitale Elektronik ·
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eeprom_24lc65_i2c.pdf
time THIGH 4000 — 600 — ns Clock low time T LOW 4700 — 1300 — ns SDA and SCL rise time TR — 1000 — 300 ns (Note 1) SDA and SCL fall time TF — 300 — 300 ns (Note 1) START condition setup time THD STA 4000 — 600 — ns After this period the first clock pulse is generated START condition setup time TSU :TA
in „64K EEPROM 24LC65 Adressierung“ · Mikrocontroller und Digitale Elektronik ·
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LT1161.pdf
to 60V. U TYPICAL APPLICATION 24V + Switch Drop vs Load Current 50VF CT + + R S 0.50 0.1 F T1 V V DS1 0.01 0.45 0.1 F T2 G1 IRFZ34 0.40 LOAD 0.35 0.1 F T3 DS2 0.01 #1 ( O0.30 0.1 F LT1161 G2 IRFZ34 D0.25 T4 L#2D A IN1 DS3 0.01 O0.20 INPUTS IN2 G3 T0.15 IN3 IRFZ34 LOAD IN4 DS4 0.01 #3 0.10 GND 0.05 GND
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XLamp7090XR-E.pdf
documen4600 Silicon Driveange without notice. Cree, Durham, NC 27703 USA Tel: +1.919.313.5300 6 CLD-DS05.011 www.cree.com/xlamp Electrical Characteristics (T = 25˚C) J 1000 900 ) 800 A m 700 ( n e 600 u 500 C r 400 a Thewma300esign r o F 200 100 0 0.0 1.0 2.0 3.0 4.0 5.0 Forward Voltage (V) 1200 Thermal
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MCP2551.pdf
voltage 0V Receive data output voltage 0.3 VDD 11 VRS = 4V; TXD = 2V © 2010 Microchip Technology Inc. DS21667F-page 13 MCP2551 NOTES: DS21667F-page 14 © 2010 Microchip Technology Inc. MCP2551 3.0 PACKAGING INFORMATION 3.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX MCP2551 XXXXXNNN
in „MCP2551 Standby Mode wenn AVR im Power down Modus“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HAL300_Differential_Hall-Effect_Sensor_IC_2ds-1109203.pdf
VDD VEMC OUT VP 3 4.7 nF 20 pF 2 GND Fig. 4–1: Test circuit for EMC investigations Micronas 21 HAL300 DATA SHEET 5. Data Sheet History 1. Final data sheet: “HAL300 Differential Hall Effect Sensor IC”, July 15, 1998, 6251-345-1DS. First release of the final data sheet. 2. Final data sheet: “HAL300 Differential
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BF1009SW_2001_INF.pdf
Symbol Values Unit min. typ. max. DC characteristics Drain-source breakdown voltage 16 - - V V(BR)DS ID= 300 µA, V G1S = 0 V, G2S = 0 V Gate 1 - source breakdown voltage +V(BR)G1SS 8 - 12 +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate 2 source breakdown voltage ±V 10 - 16 (BR)G2SS ±IG2S = 10 mA, VG1S = 0
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LED.pdf
LED, SMD, weiß, typ. 3465 K, 300 mA, typ. 90 lm, CRI 80, 120° LG Innotek 1000 / Gurt 500 322116 8541 4010 LEMWH51W80MZ00 LED, SMD, weiß, typ. 2725 K, 300 mA, typ. 90 lm, CRI 80, 120° LG Innotek 1000 / Gurt 500 322117 8541 4010 YE-G3D30N
in „[V] Großer Posten SMD und THT LEDs günstig abzugeben“ · Markt ·
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PDF
LM61.pdf
to +100˚C range n Output Impedance 800 (max) n Suitable for remote applications Typical Application DS012897-2 V O =(+10 mV/˚C x T ˚C) + 600 mV Temperature (T) Typical O +100˚C +1600 mV +85˚C +1450 mV +25˚C +850 mV 0˚C +600 mV −25˚C +350 mV −30˚C +300 mV FIGURE 1. Full-Range Centigrade Temperature Sensor
in „R8C/13 Software-Verständnisfrage“ · Mikrocontroller und Digitale Elektronik ·
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MRF175GV.pdf
otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (1) Gate Threshold Voltage DS = 10 V, D = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Drain–Source On–Voltage (GS = 10 V,DI = 5.0 A) V DS(on) 0.1 0.9 1.5 Vdc Forward Transconductance (DS = 10 V,DI = 2.5 A) gfs 2.0 3.0 — mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance DS = 28 V, GS = 0, f = 1.0 MHz) C iss — 180 — pF Output Capacitance (V = 28 V, V = 0, f = 1.0 MHz) C — 200 — pF DS GS oss Reverse Transfer Capacitance DS = 28 V, GS = 0, f = 1.0 MHz) C rss — 20 — pF FUNCTIONAL
in „Dimensionierung eines Kühlkörpers für HF-Modul“ · HF, Funk und Felder ·
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PDF
IRLB8748PBF.PDF
196 ––– ––– S V DS= 15V, D = 32A Q g Total Gate Charge ––– 15 23 Q gs1 Pre-Vth Gate-to-Source Charge ––– 3.6 ––– V DS= 15V Q gs2 Post-Vth Gate-to-Source Charge ––– 2.2 ––– nC V GS= 4.5V Q gd Gate-to-Drain Charge ––– 5.9
in „Funktionsprüfung MOSFET IRL B8748PbF“ · Analoge Elektronik und Schaltungstechnik ·
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24C64.pdf
1.8V≤ VCC ≤2.5V 1300 — 2.5V≤ VCC ≤5.5V SDA and SCL rise time TR — 1000 ns 1.8V≤ VCC ≤2.5V (Note 1) — 300 2.5V≤ VCC ≤5.5V SDA and SCL fall time TF — 300 ns (Note 1) START condition hold time T HDSTA 4000 — ns 1.8V≤ VCC ≤2.5V 600 — 2.5V≤ VCC ≤5.5V START condition setup time T SUSTA 4700 — ns 1.8V≤ VCC ≤2.5V
in „Merkwürdiger 24C64N“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BST-BMP180-DS000-09-2.pdf
BMP180 Data sheet Document revision 2.5 Document release date 5 April 2013 Document number BST-BMP180-DS000-09 Technical reference code(s) 0 273 300 244 Notes Data in this document are subject to change without notice. Product photos and pictures are for illustration purposes only and may differ from the
in „BMP180 Luftdruck Sensor“ · Mikrocontroller und Digitale Elektronik ·
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A100_IRF3415_IF.pdf
DS D I DrainStoS±ource LeaOage Current BBB BBB 25 VDS= 150V, VGS = 0V DSS BBB BBB 250 "A V = 120V, V = 0V, T = 150°C DS GS J -ateStoS±ource Forward LeaOage BBB BBB 100 V GS= 20V GSS -ateStoS±ource keherse
in „Suche IR 513H“ · Analoge Elektronik und Schaltungstechnik ·
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162537-da-01-en-IRF_9540_N.pdf
Vs. Temperature IRF9540N 3000 V = 0V, f = 1MHz 20 I = -11A GS D Ciss= C gs + Cgd , Cds SHORTED ) V DS = -80V Crss= C gd ( 2500 Coss= C ds + Cgd e16 V DS = -50V g V DS = -20V F l p2000 o e C iss V c c12 n u i1500 o a - p t a C oss e 8 ,1000 a C G C rss , S4 500 VG - FOR TEST CIRCUIT SEE FIGURE 13 0 A
in „iMax B6 defekt“ · Analoge Elektronik und Schaltungstechnik ·
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irl2203npbf.pdf
6000 VGS = 0V, f = 1MHz D = 60A Ciss= Cgs + Cgd ,Cds SHORTED C = C ) V = 24V 5000 Crss= Cgd + C ( V DS= 15V oss ds gd g 12 DS F t ( 4000 o e V n Ciss c 9 t u c 3000 o p o a - 6 , 2000 Coss t C G , S 3 1000 VG Crss FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 20 40 60 80 V DS , Drain-to-Source Voltage
in „IRL2203N defekt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP1640.pdf
1. • Bluetooth Headsets • +3.3V to +5.0V Distributed Power Supply 2011 Microchip Technology Inc. DS22234B-page 1 MCP1640/B/C/D L1 4.7µH VOUT VIN 3.3V @ 100 mA 0.9V to 1.7V SW V OUT VIN C IN 976 K COUT +E 4.7µF V 10µF I EN FB A K 562 K A - GND L1 4.7µH VOUT V IN SW 5.0V @ 300 mA 3.0V to 4.2V V OUTS
in „ESP32-C6 an 18650 Akku betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MTP12P10_D-.pdf
as switching regulators, converters, solenoid and relay drivers. 12 AMPERES, 100 VOLTS Features R DS(on) = 300 mW • Silicon Gate for Fast Switching Speeds − Switching Times Specified at 100°C P−Channel D • Designer’s Data − IDSS, VDS(on), GS(th)and SOA Specified at Elevated Temperature • Rugged − SOA
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PDF
MPT2P50E.pdf
1.0 Adc, T = 125⋅C) – – 12.6 D J Forward Transconductance (V = 15 Vdc, I= 1.0 Adc) g 0.5 – – mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance Ciss – 845 1183 pF (V = 25 Vdc, V = 0 Vdc, Output Capacitance DS GS C oss – 100 140 f = 1.0 MHz) Reverse Transfer Capacitance Crss – 26 52 SWITCHING CHARACTERISTICS
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irsf3010.pdf
-55 self-limited Jop o TStg StorageTemperature -55 175 C TL LeadTemperature(Soldering,10seconds) — 300 StaticElectricalCharacteristics (T = 25°C unless otherwise specified.) c Symbol ParameterDefinition Min. Typ. Max. Units Test Conditions Vds,clamp Drain to SourceClampVoltage 50 54 — V ds = 10mA — 56 62 ds = 11A, p = 700 S R ds(on) Drain to Source On Resistance — 70 80 Vin= 5V, ds= 4A — 85 — m V = 4V, I = 4A in ds — 53 — Vin= 10V, ds= 4A Idss DraintoSourceLeakageCurrent — — 10 Vds = 12V, in= 0V — — 100
in „PIC steuert High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ALD110800-1489.pdf
V = 0.1V D DS +1.6 +1.6 ID= 40µA, VDS = 0.1V On Drain Current DS (ON) 12.0 12.0 mA VGS = +9.5V, DS = +5V 3.0 3.0 VGS = +4.0V, DS = +5V Forward Transconductance GFS 1.4 1.4 mmho VGS = +4.0V V = +9.0V DS Transconductance
in „Radiobasteln - Was hat 2018 noch Aussicht auf Erfolg ?“ · HF, Funk und Felder ·
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PDF
MCP73831.pdf
Inc. DS21984A-page 19 MCP73831 NOTES: DS21984A-page 20 © 2005 Microchip Technology Inc. MCP73831 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory
in „Akku Ladetechnik“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OB2502.PDF
resistance OB2502RCP-H 3.3 Ώ OB2502TCP-H 2.2 Ώ ©On-Bright Electronics Confidential Datasheet OB_DOC_DS_2502xA2 - 5 - OB2502x High Precision CC/CV Primary-Side Power Switch CHARACTERIZATION PLOTS VDD vs Istatic 800 ) 700 u 600 i 500 a 300 I 200 100 0 2 4 6 8 10 12 14 16 18 20 22 VDD(V) UVLO_7(ON)(V) vs
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JCS18N50WH.pdf
On-Characteristics 阈值电压 V GS(th) VDS = VGS , D =250μA 3.0 - 5.0 V Gate Threshold Voltage 静态导通电阻 R DS(ON) VGS =10V , D =9.5A - 0.22 0.27 Ω Static Drain-Source On-Resistance 正向跨导 Forward Transconductance g fs V = 40V , I =9.5A（note 4） - 24 - S DS D 动态特性 Dynamic Characteristics 输入电容 VDS25V, Input capacitance
in „Motordrehzahlregler für Laufband“ · Analoge Elektronik und Schaltungstechnik ·
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Si2303.pdf
Drain-Source Breakdown Voltage V (BR)DSS V GS= 0 V, D = - 10 µA - 30 V Gate-Threshold Voltage V GS(th) V DS= V GS, D = - 250 µA - 1.0 - 3.0 Gate-Body Leakage IGSS V DS = 0 V, GS = ± 20 V ± 100 nA V = - 30 V, V = 0 V Zero Gate Voltage Drain Current I DS GS - 1 µA DSS VDS = - 30 V,GS = 0 V, J = 55 °C - 10 On-State Drain Current ID(on) V DS≤ - 5 V, GS = - 10 V - 6 A V GS = - 10 VD I = - 1.7 A 0.150 0.200 Drain-Source On-Resistance a R DS(on) Ω VGS = - 4.5 V,DI = - 1.3 A 0.285 0.380 a g V = - 5 V, I = - 1.7 A Forward Transconductance fs
in „Highside-Switch gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FDC638P-D.PDF
Voltage V DS = VGS ID= –250 μA –0.4 –0.8 –1.5 V ΔV GS(th) Gate Threshold Voltage ID= –250 μA,Referenced to 25°C 3 mV/°C ΔT J Temperature Coefficient R Static Drain–Source 39 48 DS(on) V GS = –4.5 V, ID= –4.5 A mΩ
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF-610-Datasheet.pdf
Zero Gate Voltage Drain Current DSS DS GS µA V DS = 160 V, VGS = 0 V, TJ= 125 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V ID= 2.0 A b - - 1.5 Ω Forward Transconductance g fs V DS= 50 V, ID= 2.0 Ab 0.8 - - S Dynamic Input
in „Schaltung für logic level to high voltage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF830.pdf
VDS = VGS ID= 250 A 2 3 4 V Voltage R Static Drain-source On V = 10V I = 2.7 A 1.35 1.5 DS(on) GS D Resistance ID(on) On State Drain Current VDS > ID(on) RDS(on)max 4.5 A VGS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (∗) Forward V > I x R I = 2.7 A 2.5 S fs DS D(on) DS(on)max D Transconductance C Input Capacitance V = 25 V f = 1 MHz V = 0 610 pF iss DS GS Coss Output Capacitance 120 pF Crss Reverse Transfer 10 pF Capacitance 2/8 IRF830 ELECTRICAL CHARACTERISTICS (continued
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·
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IRLZ34.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
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PDF
irlz34n.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
in „IRLZ34N anschliessen ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BTS141_DS_14.pdf
4000 V = 10 V IN Input holding current after thermal shutdown 1) IN(H) T j= 25 °C 500 - - T = 150 °C 300 - - j On-state resistance R mΩ DS(on) V IN= 5 V, ID= 12 A, T j 25 °C - 31 34 V IN= 5 V, ID= 12 A, T j 150 °C - 52 68 On-state resistance R DS(on) V IN= 10 V, ID= 12 A, T j 25 °C - 25 28 V IN= 10 V,
in „BTS141 - welcher Pin ist mit dem Gehäuse verbunden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
––– ––– 17.5 mΩ VGS = 10V,DI = 25A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 19 ––– ––– S VDS = 25V,DI = 25A ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Mosfet IRFZ44N 12V schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP73811_2.pdf
FIGURE 2-18: Complete Charge Cycle (1000 mAh Li-Ion Battery). 2005-2013 Microchip Technology Inc. DS20001984F-page 9 MCP73831/2 NOTES: DS20001984F-page 10 2005-2013 Microchip Technology Inc. MCP73831/2 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP_73831.pdf
FIGURE 2-18: Complete Charge Cycle (1000 mAh Li-Ion Battery). 2005-2013 Microchip Technology Inc. DS20001984F-page 9 MCP73831/2 NOTES: DS20001984F-page 10 2005-2013 Microchip Technology Inc. MCP73831/2 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP1801.pdf
in an Application”, DS00792, Microchip Technology Inc., 2001 2010 Microchip Technology Inc. DS22051D-page 1 MCP1801 Functional Block Diagram MCP1801 +V IN V IN V OUT +VIN SHDN Shutdown Voltage Control Reference - Current
in „USB-Spannungsversorgung lässt PIC24FJ128 abstürzen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl7486mpbf-936689.pdf
applications V DSS 40V Battery powered circuits Half-bridge and full-bridge topologies R typ. 1.0m DS(on) Synchronous rectifier applications Resonant mode power supplies max 1.25m @ V GS = 10V OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters R DS(on)typ.
in „Reparatur Makita XWT08Z (DTW1002Z)“ · Analoge Elektronik und Schaltungstechnik ·
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RequiresAcrobat6.pdf
from http://www.datasheetarchive.com. GF9926 Dual N-Channel Enhancement-Mode MOSFET LowV GS(th) V DS 20V R DS(ON) 30 ΩmI 6.0AD H C ® E N T R E T F D1 D1 D2 D2 E N 8 7 6 5 G SO-8 0.189 (4.80) Q1 Q2 8 5 1 2 3 4 0.157 (3.99) 0.150 (3.81) S1 G1 S2 G2 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches 0.05
in „Ersatz-MosFet für GF9926“ · Analoge Elektronik und Schaltungstechnik ·