-
PDF
NECCS04393-1.pdf
V 0 300 ns time from SCK0↓ C = 100 pF Note 2.0 V ≤ V DD< 4.5 V 0 500 ns SCK0 rise, fall time R6, 1000 ns tF6 Note R and C are the load resistance and load capacitance of the SB0 and SB1 output lines. 44 Data Sheet U11776EJ2V1DS µPD78P0308, 78P0308Y 2 (vii) I C bus mode (SCL...internal clock output):
in „Anschlussbelegung uP D78P0308GF gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
_Elmos__981_03.pdf
capacitance L =330µH C 10 47 0.6 · C µF CC SPS VCC,L330µ ST V CCtput capacitance LSPS000µH C VCC,L1000µ 68 100 0.6 · ST µF 2) C VCCequivalent series resistance LSPS30µH RESR,CVCC,L330µ.2 0.5 0.8 Ω C VCCequivalent series resistance 2)PS000µH RESR,CVCC, L1000µ 1.25 1.5 Ω Ceramic capacitance V to ground
in „Exposed Pad anschließen? (ATSAMD20E18A-MU und ELMOS E981.03)“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
SI4946BEY.pdf
V DS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.2 D = 5.3 A D = 5.3 A 2.0 V 8 e a c 1.8 o a VGS = 10 V V V DS= 30 V i ) 1.6 c 6 e e u R l S V DS= 48 V n
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP738312.pdf
30 t h A C 15 -50 0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 -60 2 3 4 5 6 7 8 9 1 1 1 1 1 1 0.01 0.1 1 10 100 1000 Junction Temperature (°C) Frequency (kHz) FIGURE 2-9: Charge Current (I OUT ) vs. FIGURE 2-12: Power Supply Ripple Junction Temperature (T ). J Rejection (PSRR). DS20001984G-page 8 2005-2014 Microchip
in „MCP73832 Beschaltung für die Auswertung mit µC“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
S6D0154.c
return KAL_FALSE; } } } lcd_reg_index++; while (LCD_IS_RUNNING); return KAL_TRUE; } LCD_Funcs LCD_FUNCS_DS_S6D0154 = { LCD_Init_DS_S6D0154, LCD_PWRON_DS_S6D0154, LCD_SetContrast_DS_S6D0154, LCD_ON_DS_S6D0154, LCD_BlockWrite_DS_S6D0154, LCD_Size_DS_S6D0154, LCD_EnterSleep_DS_S6D0154, LCD_ExitSleep_DS_S6D0154, LCD_Partial_On_DS_S6D0154, LCD_Partial_Off_DS_S6D0154, LCD_Partial_line_DS_S6D0154, /*Engineering mode*/ LCD_GetParm_DS_S6D0154, LCD_SetBias_DS_S6D0154, LCD_Contrast_DS_S6D0154, LCD_LineRate_DS_S6D0154, LCD_Temp_Compensate_DS_S6D0154
in „Nokia N95-Display“ · Mikrocontroller und Digitale Elektronik ·
-
Bild
Rigol Oszilloskop mit Messaufbau und Handbuch
PeakTech, VOLTAGE, CURRENT, RIGOL DS1052E, CH1, CH2, REF, Quick Guide DS1000E DS1000D Series Digital Oscilloscope
in „[V] RIGOL DS1052E 2 Kanal 50 MHz 1GSa/s“ · Markt · · Fotos
-
Datei
7Temperaturen_DS18B20_ohne_Seriel.ino
aus). sensors.begin(); //Starten Sie die Bibliothek discoverOneWireDevices(); if ((Anzahl_Sensoren_DS18B20 > 0)) { myDS18B20.begin(); for (byte i = 0 ; i < myDS18B20.getDeviceCount(); i++) { if (myDS18B20.getAddress(DS18B20_Adressen, i)) { myDS18B20.setResolution(DS18B20_Adressen ); } } } } void loop
in „Arduino Programmierung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MCAC75N06YBTP-datasheet-3.pdf
60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source On-Resistance R DS(on) V GS0V, I D20A 5 6 mΩ Diode Characteristics Continuous Body Diode Current S 75 A Diode
in „Suche Ersatz für obsoleten MOSFET MCAC75N06YB-TP (oder Bezugsquelle)“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
D170086D.pdf
levels are within the Class B limits stipulated by CISPR 22. 30. . . .230 MHz 30 dB µV/m 230. . . .1000 MHz 37 dB µV/m 1. . . .10 GHz 46 dB µV/m © 1997 National Semiconductor DS012661ion www.national.com Absolute Maximum Ratings (Note 1) ESD Susceptibility If Military/Aerospace specified devices are required
in „LM2528-3.3 & SI4735 & Bluetooth anliegen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
TLV431-DIO.pdf
are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. TLV431 1 of 14 October 2012 Document number: DS32088 Rev. 6 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated TLV431 Absolute Maximum Ratings (@TA
in „Schaltung zur Ürberwachung der 9 Volt Batteriespannung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MC_product_selection_AN.pdf
treat these subjects in NiMH more depth and breadth have been included in the Li-Ion 6-10 50-500 1000 <2C -20-+60 High “Reference” section. © 2007 Microchip Technology Inc. DS01088A-page 1 AN1088 Batteries usually occupy a considerable space and circuitry is required for Li-Ion battery to prevent over
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
Thermo.c
Datenrichtung jeweils festlegen - je nach dem ob daten zum DS gesedent, oder vom DS empfangen werden sollen // Kommandos an den DS1820 #define MATCH_ROM 0x55 //64 Bit code wird vom Master an ale DS gesendet - nur der DS mit dem Passenden 64Bit "namen" antwortet
in „Anfängerfrage: Temperaturgesteuerter Heizer“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MOSFET_N_Dual_DMT3020LSD_LowRDS_SOIC8.pdf
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET BVDSS R DS(ON) Max TA= +25°C Low On-Resistance 30V 20m @ V GS = 10V 16A Low Gate Threshold Voltage T 32m @ V GS = 4.5V 13A Low Input Capacitance N Fast Switching Speed O Low Input/Output Leakage U Description
in „Unerwünschter Peak beim Ausschalten eines Kleinsignal-MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
20002234D.pdf
OUT for 3.3V OUT 100.0 VIN 2.5V ) % 80.0 ( c e c V IN0.8V V IN1.2V f E 60.0 40.0 0.1 1.0 10.0 100.0 1000.0 Output Current (mA) DS20002234D-page 2 2010-2015 Microchip Technology Inc. MCP1640/B/C/D 1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to
in „NRF24L01+ durch MCP1640 gestört?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LM1086.pdf
-43 DS100948-44 Ripple Rejection vs. Frequency (LM1086-5) Ripple Rejection vs. Output Current (LM1086-5) DS100948-46 DS100948-45 Line Transient Response Load Transient Response DS100948-47 DS100948-48 7 www.national.com
in „Spannungsregler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irf740pbf.pdf
Forward Voltage 20 I = 10 A 103 ) D 5 ( VDS = 320 V Operation in this area limited e 16 2 by R a ) 2 DS(on) l V DS= 200 V ( 10 V t 5 e 12 V DS= 80 V e 10 µs r r 2 o C 10 - n 100 µs t 8 a 5 e D 2 1 ms a , G I 1 10 ms ,S 4 5 G TC= 25 °C V For test circuit 2 TJ= 150 °C see figure 13 Single Pulse 0 0.1 2 5
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
rtc.pdf
Hand-Held Devices PART TEMP RANGE PIN- TOP MARK GPS/Telematics Devices PACKAGE Embedded Time Stamping DS1390U-18 -40°C to +85°C 10 µSOP DS1390 rr-18 Medical Devices DS1390U-3 -40°C to +85°C 10 µSOP DS1390 rr-3 DS1390U-33 -40°C to +85°C 10 µSOP DS1390 rr-33 DS1391U-18 -40°C to +85°C 10 µSOP DS1391 rr-18 DS1391U-3 -40°C to +85°C 10 µSOP DS1391 rr-3 DS1391U-33 -40°C to +85°C 10 µSOP DS1391 rr-33 DS1392U-18 -40°C to +85°C 10 µSOP DS1393 rr-18 DS1392U-3 -40°C to +85°C 10 µSOP DS1392 rr-3 Typical Operating
in „ein Uhrenquartz für AVR und RTC???“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
lt1157.pdf
, CGATE = 1000pF Time for GATE < 0.5V 10 36 60 s V S 5V, C GATE= 1000pF Time for GATE < 0.5V 10 31 60 s The denotes specifications which apply over the full operating temperature range. Note 1:Quiescent current OFF
in „3V Gate-Treiber gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DS1821.pdf
QTY FAILS FA# INFANT LIFE 9741 125C, 7.0 VOLTS 48 HRS 237 0 HIGH VOLTAGE LIFE 9741 125C, 7.0 VOLTS 1000 HRS 77 0 INFANT LIFE 9746 125C, 7.0 VOLTS 48 HRS 230 0 HIGH VOLTAGE LIFE 9746 125C, 7.0 VOLTS 1000 HRS 77 0 HIGH VOLTAGE LIFE 0111 125C, 7.0 VOLTS 1000 HRS 80 0 HIGH VOLTAGE LIFE 0147 125C, 7.0 VOLTS 1000 HRS 80 0 HIGH VOLTAGE LIFE 0147 125C, 7.0 VOLTS 1000 HRS 80 0 HIGH VOLTAGE LIFE 0249 125C, 7.0 VOLTS 1000 HRS 80 0 HIGH TEMP OP LIFE 0310 125C, 5.5 VOLTS 1000 HRS 80 0 HIGH TEMP OP LIFE 0334 125C, 5.5
-
PDF
MCP73832T.pdf
30 t h A C 15 -50 0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 -60 2 3 4 5 6 7 8 9 1 1 1 1 1 1 0.01 0.1 1 10 100 1000 Junction Temperature (°C) Frequency (kHz) FIGURE 2-9: Charge Current (I OUT ) vs. FIGURE 2-12: Power Supply Ripple Junction Temperature (T ). J Rejection (PSRR). DS21984E-page 8 © 2008 Microchip Technology
in „LiPo-Charger mit MCP73832T“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP73831-2_ENG_TDS.pdf
30 t h A C 15 -50 0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 -60 2 3 4 5 6 7 8 9 1 1 1 1 1 1 0.01 0.1 1 10 100 1000 Junction Temperature (°C) Frequency (kHz) FIGURE 2-9: Charge Current (I OUT ) vs. FIGURE 2-12: Power Supply Ripple Junction Temperature (T ). J Rejection (PSRR). DS21984E-page 8 © 2008 Microchip Technology
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
Temperatur_DS18B20.ino
/** * Temperature monitor for DS18B20 (Dallas) or similar one (like DS18S20) * supported 1 until 4 sonsors (more is possible by changing code-lines) * target: ESP8266, especially Kit-8 type * written by Peter Rebesky, February 2023
in „ESP Temperaturmodul mit DS18B20 und Web-Ansicht“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
Sonoff_Timer_Steuerung.ino
timerrunning; int RelaisPin = 13; // GPIO13 Blaue LED auf dem Sonoff TTBOUNCE b = TTBOUNCE(0); int time_ss = 1000; int time_ds = 2000; void handleRoot() { snprintf ( htmlResponse, 3000, "<!DOCTYPE html>\ <html lang=\"en\">\ <head>\ <meta charset=\"utf-8\">\ <meta name=\"viewport\" content=\"width=device-width,
in „2fach Timer für Kaffeemühle“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
main.c
uint8_t minute = 32; uint8_t second = 00; char Buffer[20]; char c; mcp_init(); mcp_setValue(127); ds1307_init(); ds1307_setdate(17,3,9,20,22,59); // Wait a little while the display starts up for(volatile uint16_t i=0; i<15000; i++); // Initialize the LCD ks0108Init(0); // Select a font ks0108SelectFont
in „ATmega16 liefert kein Signal an allen Pins außer I2c“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Funkgeraeteliste_Chirp.pdf
-Dec-2022 Yes 0.00% Kenwood_TH-D72_clone_mode @kk7ds 28-Nov-2022 Yes 0.02% Kenwood_TH-D72_live_mode @kk7ds 21-Oct-2022 Yes 0.00% Kenwood_TH-D74_clone_mode @kk7ds 30-Nov-2022 Yes 0.00% Kenwood_TH-D74_live_mode @kk7ds 20-Oct-2022 Yes 0.00% Kenwood_TH-D7G
in „Welcher USB-Adapter für Baofeng UV-5R gut?“ · HF, Funk und Felder ·
-
PDF
2304140030_QX-Micro-Devices-QX2304L30T_C219035.pdf
of 14 QX2304_DS03CN (Shenzhen) Co., Ltd. www.qxmd.com.cn Machine Translated by Google QX2304 High-efficiency PFM synchronous boost DC/DC converter TO92 package dimension diagram: QX2304_DS03CN Quancore Electronics Technology
in „IC (SOT23-3?) aus Christbaumkerze identifizieren“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Rigol_Driver_Install.pdf
die folgenden Treiber+Software geladen: http://rapidshare.com/files/325849190/Rigol_DS1000E_windows_driver.rar (Dank an mrgreen!) Diese lassen sich auch direkt auf den Seiten von Rigol finden: http://www.rigol.com/templates/T_Support/resources.aspx?nodeid=78&contentid=803 (Visa Version
in „Oszi Rigol DS1102E : keine Verbindung zum PC“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
drv8350f_7_.pdf
value of I was DRIVEN DRIVEN selected as 200-mA sink. 9.2.1.2.3 V Overcurrent Monitor Configuration DS The V monitors are configured based on the worst-case motor current and the R of the external DS DS(on) MOSFETs as shown in Equation 13. VDS_OCP ! max u R DS(on)max (13) 9.2.1.2.3.1DS Overcurrent Example The goal of this example is to set the V DS monitor to trip at a current greater than 75 A. According to the CSD19535KCS 100 V N-Channel NexFET ™ Power MOSFET data sheet, the R DS(on)value is 2.2 times higher at 175°C, and the maximum R DS(on)
in „BLDC-Motor: Überspannung beim Bremsen trotz Durchschaltung aller Low-Side-MOSFETs?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
lm35_Temp.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Temperatursensor LM35 DZ will nicht funktionieren“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
8810-TuofengSemiconductor_002.pdf
Drain-Source Breakdown Voltage I =250µA, V =0V 20 V DSS D GS IDSS Zero Gate Voltage Drain Current V DS=16V, V GSV 1 µA IGSS Gate-Body leakage current VDS0V, V =GS2V ±15 µA V GS(th) Gate Threshold Voltage VDSV GS D =250µA 0.5 0.6 1 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS VGS =4.5V, D
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
-
Datei
BCS33.ASM
. Merkzelle) arnd: ds 2 ; RND-Merkzelle areg2: ds 4 ; Arithmetik-Puffer2 ) acb2: ds 2 ; Ausdruckwert CB ) 2. Operand bzw. alh2: ds 2 ; Ausdruckwert LH ) Ergebnis asign2: ds 1 ; Vorzeichen ) areg1: ds 4 ; Arithmetik-Puffer1 ) acb1: ds 2 ; Ausdruckwert CB ) 1. Operand alh1: ds 2 ; Ausdruckwert LH ) asign1: ds 1 ; Vorzeichen ) ZWIREG: ds 4 ; Zwischenregister 2.Operand bei Mult./Div. BZ: ds 2 ; Anfang Eingabezeile BWS READPT: ds 2 ;
in „Z80 SBC Problem.“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Meanwell_SD-1000H-12.pdf
1000W Single Output DC-DC Converter SD-1000 series ½ Features : E 1U low profile 41mm E High power density 10.7w/inch 3 E 2000VAC I/O Isolation E Protections: Short circuit / Overload / Over voltage / Over
in „DC-DC Wandler Remote Sense“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Low_Drop_Spannungsregler_MCP_1702-5002.pdf
o N 0.01 0.001 0.01 0.1 1 10 100 1000 Frequency (kHz) FIGURE 2-27: Output Noise vs. Frequency. FIGURE 2-30: Dynamic Load Response. © 2009 Microchip Technology Inc. DS22008D-page 11 MCP1702 NOTES: DS22008D-page 12 © 2009 Microchip Technology
-
PDF
BSS138-D.PDF
Temperature ID = 250 µA,Referenced to 25°C mV/°C ∆T J Coefficient 72 DSS Zero Gate Voltage Drain Current V DS= 50 V, VGS = 0 V 0.5 µA V DS= 50 V,V GS = 0 V TJ= 125°C 5 µA V DS= 30 V, VGS = 0 V 100 nA GSS Gate–Body Leakage. V GS= ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage
in „Wer kann Helfen versehentlicher Kurzschluss. Wer kennt dieses Bauteil?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
app105.pdf
designated as “named XXX.” NOTE: The high–resolution temperature equation is slightly different for the DS1821 as compared to the DS1620, DS1623, DS1625, DS2434, and DS2435. DS1620, DS1623, and DS1625: 1. Issue Start Convert protocol (EEh). 2. When conversion is finished, read 9–bit temperature value (AAh
in „DS18S20 hohe Auflösung berechnen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS1302.pdf
DS1302 X2 1 D 8 I/O DS1302N -40°C to +85°C 8 PDIP DS1302* N.C. 2 7 N.C. DS1302S 0°C to +70°C 8 SO (200 mils) DS1302S N.C. 3 6 N.C. DS1302SN -40°C to +85°C 8 SO DS1302S* GND 4 5 CE DS1302Z 0°C to +70°C 8 SO (150 mils) DS1302Z DS1302Z+ 0°C to +70°C 8 SO (150 mils) + DS1302Z SO (300 mils) DS1302ZN -40°C to +85°C 8 SO DS1302ZN DS1302ZN+ -40°C to +85°C 8 SO + DS1302ZN DS1302S-16 0°C to +70°C 16 SO (300 mils)DS1302S16 DS1302SN
in „Wiedermal ein RTC-Problem“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
NTD4963N-D.PDF
C ISS 1035 Output Capacitance COSS V = 0 V, f = 1.0 MHz, = 12 V 220 pF GS DS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 8.1 Threshold Gate Charge Q G(TH) 1.2 V = 4.5 V, V = 15 V, I = 30 A nC Gate−to−Source Charge Q GS GS DS D 3.5 Gate−to−Drain Charge Q GD 3.5 Total Gate Charge QG(TOT) V GS= 10 V, DS = 15 V,DI = 30 A 16.2 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time d(ON) 12 Rise Time r 20 VGS = 4.5 V,DS = 15 V, ns Turn−Off Delay Time td(OFF) ID = 15 A, G = 3.0 W 14 Fall Time f 3 5. Pulse
in „Vergleichsmosfet NTD 4963N“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP4821-MCP4822.pdf
nV-s Note 2 Major Code Transition Glitch — 45 — nV-s 1 LSb change around major carry (0111...1111 to 1000...0000 ) Digital Feedthrough — <10 — nV-s Note 2 Analog Crosstalk — <10 — nV-s Note 2 Note 1: By design, not production tested. 2: Too small to quantify. © 2005 Microchip Technology Inc. DS21953A-page
in „Digital-Analog-Umsetzer (10V -> 1mV Auflösung)“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS3930.pdf
5 DS3930 16 LO 0-5 2-WIRE INTERFACE SCL LO0-5 I/O0 6 15 HI3-5 DS3930 I/O 7 14 I/0 H3-5 1 W3 I/O2 8 13 W4 NONVOLATILE I/O I/1 W3 V CC 9 12 W 5 VCC I/2 W4 TERMINALS W GND 10 11 I/3 VCC 5 DECOUPLI0.1µFP DIGITAL
-
Datei
main.h
use_pos_craq 0 #if use_pos_spartec == 1 #define use_i2c_lcd 1 //#define use_no_lcd 1 #define tr_wzb ds1820_val[0] #define tr_vl ds1820_val[1] #define tr_rl ds1820_val[2] #define tr_t0 ds1820_val[3] #define tr_t1 ds1820_val[4] #define tr_au ds1820_val[5] #define tr_hg ds1820_val[6] #endif #if use_pos_flur == 1 #define use_ili_tft 1 #define tr_wzb ds1820_val[0] #define tr_vl ds1820_val[1] #define tr_rl ds1820_val[2] #define tr_t0 ds1820_val[3] #define tr_t1 ds1820_val[4] #define tr_au ds1820_val[5] #define tr_hg ds1820_val[6] //#define tr_xx tr_wzb
in „Temperatursensor DHT22/AM2302 // ATMega328P“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLML6401.pdf
Datasheet Feedback April 28, 2014 IRLML6401PbF 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = Cgs C gdC ds SHORTED ) VDS =-10V 1000 C = C ( rss gd e 8 Coss = ds+ Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „3,3 V schalten mit möglichgst geringem Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
boot.asm
mov ah,0eh int 10h jmp label2 load: ; Jetzt laden wir unseren Kernel vom Laufwerk an die Adresse 1000h:0 mov ax, 0 mov dl, [bootdrive] int 13h jc load load1: mov ax,1000h mov es,ax mov bx, 0 mov ah, 2 mov al, 17 ; Anzahl zu lesender Sektoren (nur innerhalb der angegebenen Spur !) mov cx, 2 ; Spur 0
-
PDF
PT4115E.pdf
) Supply Voltage Vin(V) China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 9 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down High Brightness LED Driver with 5000:1 Dimming China Resources Powtech (Shanghai) LimiteWWW.CRPOWTECH.COM Page 10 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down
in „LED 20-50mA mit verlustarmer und winziger Lösung an 24V DC/= betreiben“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
PT4115E-datasheet.pdf
) Supply Voltage Vin(V) China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 9 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down High Brightness LED Driver with 5000:1 Dimming China Resources Powtech (Shanghai) LimiteWWW.CRPOWTECH.COM Page 10 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down
in „Problem bei LEDKSQ“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BAT54.pdf
recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS11005 Rev. 12 - 2 1 of 3 BAT54 /A /C /S ) A (1000 T E W 200 R ( U 100 N C TA= +100°C I D A R S W TA= +125°C I R 10 D O E 100 F W U P O T A +25°C D N 1 P A N A TA= -25°C 0 S 0.1 0 25 50 75 100 125 I F
in „SMD Bauteil identifizieren“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FMMT620.pdf
Product Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT620TA 620 7 8mm embossed 1000 units FMMT620TC 620 13 8mm embossed 3000 units Notes: 2. Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com/lorine (<1500ppm total) and <1000ppm antimony compounds. Marking
in „SMD Transistor für 5V/0,5A mit geringem Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
3003E.pdf
V V 1 R22 R21 IN OUT 180 GND 1M 1M 3 CN1 CN1 D1 C1 C5 2 C3 C7 Mother board -5V +5V -5V +5V 2200u 1000u C11 C12 1 7.3V 1 104 104 10u 1 1 2 2 2 104 0V IC4D R39 IC4C R34 3 7.3V 3 1 12 130k 10 120k CON3 C2 C6 C4 14 8 CON3 2200u 1000u C8 IC3 KBJ2D 104 GND 104 TL431 13 9 2 V V 3 IN OUT LM324 R40 C40 LM324
in „Suche Schaltplan Netzgerät QJ3003E“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
QJ3003E_S_netzteil.pdf
V V 1 R22 R21 IN OUT 180 GND 1M 1M 3 CN1 CN1 D1 C1 C5 2 C3 C7 Mother board -5V +5V -5V +5V 2200u 1000u C11 C12 1 7.3V 1 104 104 10u 1 1 2 2 2 104 0V IC4D R39 IC4C R34 3 7.3V 3 1 12 130k 10 120k CON3 C2 C6 C4 14 8 CON3 2200u 1000u C8 IC3 KBJ2D 104 GND 104 TL431 13 9 2 V V 3 IN OUT LM324 R40 C40 LM324
in „QJE 3005E III Schaltbild“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Mosfet_-_ti_-_csd19536kcs_TO220.pdf
Typical MOSFET Characteristics (continued) (T = 25°C unless otherwise stated) A 10 100000 ID= 100A V 9 V DS= 50V e g 8 ) 10000 l 7 p V ( e 6 c 1000 r a o 5 i - a - 4 a 100 t C a 3 − - C S 2 10 Ciss Cgd+ Cgs VG Coss= Cds+ Cgd 1 Crss C gd 0 1 0 10 20 30 40 50 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80
in „MOSFET CSD19536KCS“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irf9z34n.pdf
Temperature IRF9Z34N 1200 20 V GS = 0V, f = 1MHz ID = -10A C iss = Cgs + C gd , Cds SHORTED ) C rss = Cgd V 1000 C = C + C ( V DS = -44V oss ds gd g16 V DS = -28V ) t p o ( 800 C iss V c e n r12 i u c 600 C oss S a o a - 8 C t , 400 a C G C rss , G4 200 V - FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
