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IOR__IRFR6215.pdf
On-Resistance––– ––– 0.58 V GS= -10V, D = -6.6A TJ= 150°C VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V V DS= VGS ,DI = -250µA gfs Forward Transconductance 3.6 ––– ––– S V DS= -50V, D = -6.6A I Drain-to-Source Leakage Current ––– ––– -25 V DS= -150V, VGS = 0V DSS ––– ––– -250 µA V DS= -120V, VGS = 0V, J = 150
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73493.pdf
noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS VGS = 0 V, D = - 250 µA - 40 V V Temperature Coefficient ΔV /T - 40 DS DS J ID= - 250 µA mV/°C VGS(th)Temperature Coefficient ΔVGS(th)TJ - 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS ,DI = -
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STD5NM50.pdf
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS R DS(on) ID STD5NM50 500V <0.8 7.5 A STD5NM50-1 500V <0.8 7.5 A n TYPICAL R DS(on) = 0.7 n HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3 2 n 100% AVALANCHE TESTED 1 1 n LOW INPUT CAPACITANCE AND GATE CHARGE n
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20002234D.pdf
40°C to +85°C. OUT A A Parameters Sym. Min. Typ. Max. Units Conditions NMOS Switch On Resistance R DS(ON)N — 0.6 — VIN= 3.3V, SW = 100 mA PMOS Switch On Resistance R DS(ON)P — 0.9 — VIN= 3.3V, SW = 100 mA NMOS Peak Switch Current I 600 850 — mA Note 4 N(MAX) Limit VOUT Accuracy VOUT % -3 — +3 % Includes
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P-FET.pdf
Voltage V (BR)DSS -30 V ID=-250µA, VGS =0V Zero Gate Voltage Drain Current I -1 µA V =-30V, V =0V DSS DS GS Gate-Body Leakage IGSS ⫾100 nA V GS=⫾20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V ID=-250µA, VDS = VGS Static Drain-Source On-State Resistance RDS(on) 0.15 Ω V GS=-10V, D =-1.6A (1) 0.23 Ω V GS=-4.5V, D =-0.8A Forward Transconductance (3) g 1.1 S V =-10V,I =-0.8A fs DS D DYNAMIC (3) Input Capacitance C iss 330 pF V DS=-25 V, GS =0V, Output Capacitance C oss 120 pF f=1MHz Reverse Transfer Capacitance C 45 pF rss SWITCHING (2) (3) Turn-On Delay Time td(on) 2.8 ns Rise
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MCP4261-DigitalPot-2Fach-50kDATASHEET.pdf
Ambient Temperature and V DD . 900.0 A ( 800.0 e r 700.0 I t 600.0 e r 5.5V C 500.0 t r 400.0 W E 300.0 -40 25 85 125 Ambient Temperature (°C) FIGURE 2-3: Write Current (I WRITE ) vs. Ambient Temperature and V . DD © 2008 Microchip Technology Inc. DS22059B-page 15 MCP414X/416X/424X/426X Note: Unless
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Mosfet_Verluste_Kuehlkoerper.pdf
Tabelle1 Mosfet IRF3205PbF R ds on @25°C v gs=10V 8 mOhm Fig 4 Normalized On Resistance vs Temperature 2 @160°C R ds on 0,016 Ohm Uf body diode max 1,3 V PWM freq 16 kHz T rise 200 ns 2E-07 s T fall 300 ns 3E-07 s U 24 V duty cycle
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irf740pbf.pdf
RDS(on) VGS = 10 V D = 6.0 A - - 0.55 Ω Forward Transconductance g V = 50 V, I = 6.0 Ab 5.8 - - fs DS D S Dynamic Input Capacitance C iss VGS = 0 V, - 1400 - Output Capacitance C oss V DS= 25 V, - 330 - pF Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 - 120 - Total Gate Charge Qg - - 63
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DSO203.pdf
Mini DS203 OSC Manual 1 Intro DS203 V2.6 is a pocket size 4 channel digital Oscilloscope for common electronic engineering tasks. It's based on ARM cortex M3 (STM32F103VCT6) 32 bits platform, providing 72MS/
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2210280930_Diodes-Incorporated-AP63300WU-7_C2158012.pdf
1.0V UVLO VINUndervoltage Rising Threshold — — 3.5 3.7 V VIN Undervoltage Hysteresis — — 440 — mV R DS(ON)1 High-Side Power MOSFET On-Resistance (Note 8) — — 75 — mΩ R DS(ON)2 Low-Side Power MOSFET On-Resistance (Note 8) — — 40 — mΩ IPEAK_LIMIT HS Peak Current Limit (Note 8) — 4.1 4.5 4.9 A VALLEY_LIMIT
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CS20N60.pdf
Conditions Units Min. Typ. Max. gfs Forward Transconductance V DS5V, ID=10A -- 18 -- S C iss Input Capacitance -- 4900 -- C Output Capacitance V GS= 0V VDS= 25V -- 360 -- pF oss f = 1.0MHz C rss Reverse Transfer Capacitance -- 38 -- Resistive Switching Characteristics
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IRF540-VIS.PDF
Drain-Source Breakdown Voltage VDS V GS = 0 V, D = 250 µA 100 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, D = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) V DS = VGS, D = 250 µA 2.0 - 4.0 V Gate-Source Leakage I V = ± 20 V - - GSS GS ± 100 nA V = 100 V, V = 0 V - - Zero Gate Voltage Drain Current DSS DS GS 25 µA VDS = 80 V, VGS = 0 V, J = 150 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V D = 17 Ab - - 0.077 Ω Forward Transconductance g fs VDS = 50 V, D = 17 Ab 8.7 - - S Dynamic Input
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LM1086.pdf
-43 DS100948-44 Ripple Rejection vs. Frequency (LM1086-5) Ripple Rejection vs. Output Current (LM1086-5) DS100948-46 DS100948-45 Line Transient Response Load Transient Response DS100948-47 DS100948-48 7 www.national.com
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eSpDS1k2.pdf
Acute DS-1000 series Digital Storage Oscilloscope PRODUCT DESCRIPTION The DS-1000 series (DS-1002, DS-1102, DS-1202) is a PC-based, pocket-sized digital storage oscilloscope (DSO) with various high-end functions
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mcp3424.pdf
Technology Inc. DS22088C-page 29 MCP3422/3/4 NOTES: DS22088C-page 30 © 2009 Microchip Technology Inc. MCP3422/3/4 6.0 BASIC APPLICATION 6.1.3 I C ADDRESS SELECTION PINS CONFIGURATION (MCP3423 AND MCP3424 ) The MCP3422/
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162399-da-01-en-IRF_4905.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
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IRF4905_TO220.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
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irlz34npbf.pdf
On-Resistance Vs. Temperature IRLZ34NPbF 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= Cgs + C gd, C ds SHORTED ) 1200 C rss= C gd ( ▯VDS = 44V Ciss C oss= C ds+ C gd e 12 ▯VDS = 28V g F 1000 l ( o e e n 800 r 9 t u c Coss S p 600 o a - 6 , t C G 400 , C▯rss S 3 VG 200 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 24 28 32 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) t n r ) u 100 ( 100 C n a r 10µs
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BSS138-D.PDF
Semicondcutor ’s proprietary, high cell density, DMOS technology. These products have been designed to R DS(ON) 6.0Ω @ V GS = 4.5 V minimize on-state resistance while provide rugged, reliable, and fast switching performance.These • High density cell design for extremely loDS(ON) • Rugged and Reliable products
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Ausschaltverhalten_0_47Ohm.pdf
500 D (5A) i (7,5A) D 400 D (10A) D (12,5A) A 300 / D (15A) 1 D (17,5A) · 200 i (20A) i D V 100 uDS(5A) / uDS(7,5A) S D 0 uDS(10A) u uDS(12,5A) u (15A) −100 DS uDS(17,5A) −200 uDS(20A) −20−15−10 −5 0 5 10 15 20 25 30 35 40 45 50 55 60 t / ns
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1.5KE6V8A.PDF
231.00 1.0 5.0 328.0 4.6 0.108 1.5KE250A 1.5KE250CA 214.00 237.00 263.00 1.0 5.0 344.0 5.0 0.110 1.5KE300A 1.5KE300CA 256.00 285.00 315.00 1.0 5.0 414.0 5.0 0.110 1.5KE350A 1.5KE350CA 300.00 332.00 368.00 1.0 5.0 482.0 4.0 0.110 1.5KE400A 1.5KE400CA 342.00 380.00 420.00 1.0 5.0 548.0 4.0 0.110 Notes: 1.
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MOSFET_IRF630_N-Ch_TO-220AB_200V_9_A.pdf
Gate Threshold Voltage VGS(TH) V GS = VDS D I = 250µA 2 - 4 V Zero Gate Voltage Drain Current IDSS V DS = Rated BVDSS , VGS = 0V - - 25 µA o V DS = 0.8 x Rated BDSS , VGS = 0V, TJ= 125 C - - 250 µA On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , GS = 10V 9 - - A Gate to Source Leakage Current I V = ±20V - - ±100 nA GSS GS Drain to Source On Resistance (Note 2) rDS(ON) ID= 5A, V GS = 10V (Figure 8, 9) - 0.25 0.4 Ω Forward Transconductance (Note 2) gfs V DS > D(ON) x DS(ON)MAX D, I = 5A (Figure 12) 3 4.8 - S Turn-On Delay Time d(ON) V DD = 90V, D ≈ 9A, RGS = 9.1Ω
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25040.pdf
Protected Protected Protected High 1 Protected Writable Writable © 2006 Microchip Technology Inc. DS21204E-page 11 25AA040/25LC040/25C040 4.0 PACKAGING INFORMATION 4.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX 25AA040 XXXXXNNN I/Pe31L7 YYWW 0601 8-Lead SOIC (150 mil) Example
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Einschaltverhalten_0Ohm_Mit_Ohne_Shunt_Vergleich.pdf
500 uGS(mitShunt)(5A) 400 uGS(mitShunt)(10A) uGS(mitShunt)(12,5A) V uGS(mitShunt)(15A) / 300 uDS(mitShunt)(5A) 0 uDS(mitShunt)(10A) · uDS(mitShunt)(12,5A) G uDS(mitShunt)(15A) u 200 uGS(keinShunt)(5A) V uGS(keinShunt)(10A) / uGS(keinShunt)(12,5A) 100 uGS(keinShunt)(15A) S u (keinShunt)(5A) u GS uDS(keinShunt)(10A) 0 uDS(keinShunt)(12,5A) u (keinShunt)(15A) DS −10−20−15−10 −5 0 5 10 15 20 25 30 35 40 45 50 55 60 t / ns
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irlu024n.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
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irlu024N.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
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IRF3708PBF.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on)t 4.5V V GS 2 l Fully Characterized
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PDF
IRF3708_IR__1_.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on)t 4.5V V GS 2 l Fully Characterized
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PDF
IRF3708_IR__1_.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on)t 4.5V V GS 2 l Fully Characterized
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FMMT620.pdf
. For device mounted on FR-4 PCB measured at t ≤ 5 Secs. FMMT620 2 of 7 March 2010 Document number DS32123 Rev. 2 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated FMMT620 Thermal Characteristics and Derating information FMMT620 3 of 7 March 2010 Document number DS32123 Rev
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nFET_ZXM61N02FTA.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R DS(on) 0.18 VGS=4.5V, ID=0.93A (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss 160
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HM2302A.PDF
Drain-Source Breakdown Voltage BV DSS VGS0V I D250μA 20 22 - V Zero Gate Voltage Drain Current IDSS V DS0V,V =GS - - 1 μA Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Page 1 v1.0 HM2302A Gate-Body Leakage Current IGSS VGS±10V,V =0DS - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage
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ZXM61N02F-56180.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R DS(on) 0.18 VGS=4.5V, ID=0.93A (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss 160
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ZXM61N02F-56180.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R DS(on) 0.18 VGS=4.5V, ID=0.93A (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss 160
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ZXM61N02F-56180.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R DS(on) 0.18 VGS=4.5V, ID=0.93A (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss 160
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MCP73837.pdf
'LPHQVLRQ XVXDOO\ ZLWKRXW WROHUDQFH IRU LQIRUPDWLRQ SXUSRVHV RQO\ 0LFURFKLS 7HFKQRORJ\ 'UDZLQJ & % DS22071A-page 24 © 2007 Microchip Technology Inc. MCP73837/8 APPENDIX A: REVISION HISTORY Revision A (November 2007) • Original Release of this Document. © 2007 Microchip Technology Inc. DS22071A-page 25
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LMD18200_-_HBr__cke.pdf
125 §, all other limits are Aor TJ e 25§C. (Note 5) Symbol Parameter Conditions Typ Limit Units R DS(ON) Switch ON Resistance Output Currente 3A (Note 6) 0.33 0.4/0.6 X (max) R DS(ON) Switch ON Resistance Output Currente 6A (Note 6) 0.33 0.4/0.6 X (max) e V CLAMP Clamp Diode Forward Drop Clamp Current
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IRF4905.pdf
A 1 A 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 I = -64A c D ) a ( s t s e R 1.5 r TJ= 25°C n u 100 O C T = 175°C e ) c J r e u o l 1.0 o - a - t r - i N i 10
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NTE2399.pdf
Current I V = 1000V, V = 0V − − 100 A DSS DS GS VDS = 800V, GS= 0V, J = +125 C − − 500 A Gate−to−Source Forward Leakage GSS VGS = −20V − − −100 nA Gate−to−Source Reverse Leakage GSS VGS = 20V − − 100 nA Total Gate Charge Q g ID= 3.1A, DS = 400V
in „Kühlkörper eines NTE2399 berechnen“ · Analoge Elektronik und Schaltungstechnik ·
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MCP4151.pdf
Potentiometer in Precision Circuits DS00691 AN219 Comparing Digital Potentiometers to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 © 2008 Microchip Technology Inc. DS22060B-page
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LM124.pdf
Typical Performance Characteristics M / 4 Input Voltage Range Input Current 3 M / 2 2 M / 2 1 M L DS009299-34 DS009299-35 Supply Current Voltage Gain DS009299-36 DS009299-37 Open Loop Frequency Common Mode Rejection Response Ratio DS009299-38 DS009299-39 www.national.com 6 L M Typical Performance Characteristics
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Datei
Akkulader5.bas
'Chipselect 'SCK --> Portc.4 'Serial Clock 'SDO --> Portc.3 'Serial Data Output 'Temperatursensor DS1821 'DQ --> Portb.1 'Datenleitung '############################### Konstanten #################################### Const Read_temp = &HAA Const Startconvert_t = &HEE Const Stopconvert_t = &H22 Const
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Transistor_Dual_PushPull_ZXTC2045E6.pdf
ns IB1= -B2= -50mA Fall Time tf 31 ns Note: 14. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTC2045E6 4 of 6 March 2015 Document Number: DS33645 Rev: 3 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2045E6 Package Outline Dimensions
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Datei
test2.xml
> 0 </unknown_sec> </ds> <ds> <name> T_ist_HK </name> <type> GAUGE </type> <minimal_heartbeat>120</minimal_heartbeat> <min>NaN</min> <max>NaN</max> <!-- PDP Status --> <last_ds>20.4</last_ds> <value>1.1220000000e+03</value>
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IRF3205.pdf
–– ––– 8.0 mΩ VGS = 10V,DI = 62AVR V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 44 ––– ––– S VDS = 25V,DI = 62AR ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
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irf3205.pdf
–– ––– 8.0 mΩ VGS = 10V,DI = 62AVR V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 44 ––– ––– S VDS = 25V,DI = 62AR ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
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IRL540.pdf
Leakage GSS VGS = ± 10 V - - ± 100 nA V = 100 V, V = 0 V - - 25 Zero Gate Voltage Drain Current I DS GS μA DSS V = 80 V, V = 0 V, T = 150 °C - - 250 DS GS J VGS = 5.0 V D = 17 Ab - - 0.077 Drain-Source On-State Resistance R DS(on) Ω VGS = 4.0 V D = 14 Ab - - 0.11 Forward Transconductance gfs VDS = 50
in „MOSFET mit Treiber Verständnisproblem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540.pdf
Leakage GSS VGS = ± 10 V - - ± 100 nA V = 100 V, V = 0 V - - 25 Zero Gate Voltage Drain Current I DS GS μA DSS V = 80 V, V = 0 V, T = 150 °C - - 250 DS GS J VGS = 5.0 V D = 17 Ab - - 0.077 Drain-Source On-State Resistance R DS(on) Ω VGS = 4.0 V D = 14 Ab - - 0.11 Forward Transconductance gfs VDS = 50
in „Problem mit Mosfet IRL540 an 52V, öffnet nicht mehr“ · Analoge Elektronik und Schaltungstechnik ·
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SI1865DL_Load_Switch_with_Level-Shift.pdf
Product Vishay Siliconix Load Switch with Level-Shift FEATURES 215 mΩ Low r TrenchFET ® PRODUCT SUMMARY DS(on) 1.8 to 8 V Input Pb-free VDS2 (V) rDS(on)(Ω) D (A) 1.5 to 8 V Logic Level Control Available Low Profile, Small Footprint SC70-6 Package RoHS* 0.215 at IN= 4.5 V ± 1.2 COMPLIANT 1.8 to 8 0.300 at
in „Mit einem Taster aus/ein + Mode an µC“ · Mikrocontroller und Digitale Elektronik ·
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irf3708.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A QT High Frequency Buck Converters for Computer Processor Power Benefits Q Ultra-Low Gate Impedance Q Very Low R DS(on)t 4.5V V GS 2 Q Fully Characterized Avalanche
in „IRF3708 als Schalter“ · Mikrocontroller und Digitale Elektronik ·