R UMW IRL540N N-Channel Enhancement Mode Power MOSFET Description The UMW IRL540N uses advanced trench technology and design to provide excellenDS(ON)ith low gate charge. It can be used in a wide variety of applications
PD - 9.1495 IRL540N PRELIMINARY HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V DSS = 100V l Isolated Package l High Voltage Isolation = 2.5KVRMS R DS(on) = 0.044 l Sink to Lead Creepage
PD - 9.1495 IRL540N PRELIMINARY HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V DSS = 100V l Isolated Package l High Voltage Isolation = 2.5KVRMS R DS(on) = 0.044 l Sink to Lead Creepage
www.datasheetarchive.com This datasheet has been downloaded from http://www.datasheetarchive.com. PD - 9.1495 IRL540N PRELIMINARY HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V DSS = 100V l Isolated Package l High Voltage Isolation = 2.5KVRMS R DS(on) = 0.044 l Sink to Lead Creepage
Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 17 A 0.077 Ω
VGS = 4.0 V ID = 14 A 0.11
Forward Transconductance gfs VDS = 50 V, ID = 17 A 12 S
Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V 2200 pF
Output Capacitance Coss 560
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 140
Total Gate Charge Qg VGS = 5.0 V ID = 28 A, VDS = 80 V 64 nC
Gate-Source Charge Qgs 9.4
Gate-Drain Charge Qgd 27
Turn-On Delay Time tD(on) 8.5
Rise Time tr 170
Turn-Off Delay Time tD(off) 35
Fall Time tf 80
Internal Drain Inductance LD 4.5 nH
Internal Source Inductance LS 7.5
Drain-Source Body
Sehr preiswert (0,49€/Stk bei Reichelt Elektronik, 4,40€/10Stk bei eBay zzgl. 2,50€ Versand) sind IRL540N. Diese sind von den Leistungsdaten für den Einsatz in einem Lightstrip-Controller natürlich erheblich überdimensioniert (100V, 35A), von der Bauform (TO220) jedoch sehr handlich bei Selbstbauprojekten
half the gate resistance for the logic level HEXFETstrated by the typical switching times for the IRL540 and the IRF540 HEXFET s shown in Table 4, using data sheet test conditions. AN-937 (v.Int) Gate Resistance Gate Voltage Drain Current Typical Values (ns) R G VGS ID tD on r tD on r ( ) (V) (A) 9 10 28 15 72 40 50 4.5 5 28 15 72 44 56 Table 4: Typical Resistive Switching Times for IRL540 and IRF540 TTL families do not actually deliver 5V in thOHcondition, even into an open circuit. The 5V level can, however, be reached by the addition of a pull-up resistor from the output pin to the
2SK2314 A IR IRL530NS 100 0.1 15 63 D2PAK 2SK2789 A IR IRL530S 100 0.16 15 88 D2PAK 2SK2789 A IR IRL540 100 0.077 28 150 TO-220AB 2SK2314 A IR IRL540N 100 0.044 30 94 TO-220AB 2SK2466 A IR IRL540S 100 0.077 28 150 D2PAK 2SK2789 A IR IRL620 200 0.8 5.2 50 TO-220AB 2SK2381 B IR IRL620S 200 0.8 5.2 50 D2PAK
2SK2314 A IR IRL530NS 100 0.1 15 63 D2PAK 2SK2789 A IR IRL530S 100 0.16 15 88 D2PAK 2SK2789 A IR IRL540 100 0.077 28 150 TO-220AB 2SK2314 A IR IRL540N 100 0.044 30 94 TO-220AB 2SK2466 A IR IRL540S 100 0.077 28 150 D2PAK 2SK2789 A IR IRL620 200 0.8 5.2 50 TO-220AB 2SK2381 B IR IRL620S 200 0.8 5.2 50 D2PAK
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