otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage BC337 45 V
BC338 25 V
BVCEs Collector-Emitter Breakdown Voltage BC337 IC = 10 mA, IB = 0 50 V
BC338 IC = 0.1 mA, VBE = 0 30 V
BVCEO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 5 V
ICES Collector Cut-Off Current BC337 VCE = 45 V, IB = 0 100 nA
BC338 VCE = 25 V, IB = 0 100 nA
hFE1 DC Current Gain VCE = 1 V, IC = 100 mA 630
hFE2 VCE = 1 V, IC = 300 mA 60
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA,
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc CASE
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc CASE
ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage BC337 VCES 50 V BC338 30 Collector-Emitter Voltage BC337 VCEO 45 V BC338 25 Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Peak Collector Current ICM 1 A Base Current IB 100 mA (1) Power Dissipation
ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage BC337 VCES 50 V BC338 30 Collector-Emitter Voltage BC337 VCEO 45 V BC338 25 Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Peak Collector Current ICM 1 A Base Current IB 100 mA (1) Power Dissipation
BC337 ... BC338 BC337 ... BC338 I C = 800 mA VCEO = 25...45 V h FE = 160/250/400 Ptot = 625 mW General Purpose NPN Transistors Universal-NPN-Transistoren T jmax= 150°C Version 2017-02-09 TO-92 (10D3) Typical
BC327 BC327A BC328 UNITS BC337 BC337A BC338 Collector Emitter Voltage V CEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage V EBO 5.0 V Collector Current Continuous C 800 mA Peak
Ratings T a25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC337 50 V : BC338 30 V V Collector-Emitter Voltage CEO : BC337 45 V : BC338 25 V V Emitter-Base Voltage 5 V EBO C Collector Current (DC) 800 mA P Collector Power Dissipation 625 mW C TJ Junction Temperature
Ratings T a25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC337 50 V : BC338 30 V V Collector-Emitter Voltage CEO : BC337 45 V : BC338 25 V V Emitter-Base Voltage 5 V EBO C Collector Current (DC) 800 mA P Collector Power Dissipation 625 mW C TJ Junction Temperature
LED1 LED2 LED3 LED4 LED5 LED6 10k 9 R17 0 2 0 1 0 R t a M - o-sei G 10k 1 R 1 R 1 R13 1. 1.r eV 10k BC338 BC338 R23 BC338 BC338 BC338 BC338 hcsi ni eR. J K6 K3 K5 K2 K4 K1 Q3 Q7 Q2 Q6 Q1 Q5 - - - - - - 1 1 1 1 1 1 T T T T T T 1 B B B B B B F 1 2 1 2 1 2 1 2 1 2 1 2 1 2 X1 X7 X3 X6 X2 X5 X4 Stromversorgung
Bulb 6 Volt 4R25 6 Volt 4R25 1N4148 D1 13 k R2 8,2 k R1 Q3 Opto-Transistor S2B S2A 10 uF / 25V Q2 BC558-B H1 5 V / 90 mA 3,3 k R5 1 k R6 660 k R4 910 k Q1 BC338-25 *) Note: References are arbitrary Q1: Q2 TO-92 BC338-25; BC558-B C B E Q3 Opto Transistor C E nissen 931013 Title Author File Document Schaltpläne
MUN2115 Mot N SOT23 pnp dtr R1 10k 6E MUN5115 Mot N SOT323 MUN2115 6ER BC818-16R Phi R SOT23 BC338-16 6EZ BC818-16 Zet N SOT23 BC338-16 6F MMBF4860 Mot F SOT23 2N4860 n-ch jfet 6F BC818-25 Phi N SOT23 BC338-25 6Fs BC818-25 Sie N SOT23 BC338-25 6Fs BC818-25W Sie N SOT323 BC338
C 1 R14 T T T T O O O O 1K _ _ _ _ E E E E L L L L +5V LED +5V R3 IC4 IC1 R8 T1 PC6 PC5 PD0 PC4 1K BC338/40 10K IN DOUT PC3 Sound G PD1 PC2 Trigger_blocked 4 0 PD2 PC1 R 1 F LM7805 F F + 5 PD3 +5V 0 0 0 C C1 PD4 PC0 3 0 4 0 1 VCC GND C 1 C 1 GND AREF PB6 AVCC TSOP1736 IC2 100nF PB7 PB5 PD5 PB4 PD6 PB3
-25, and -40, according to their ) DC current gain. As complementary types, the NPN 2 transistors BC327 and BC338 are recommended. ( 2 • On special request, these transistors are also . manufactured in the pin configuration TO-18. . i m Mechanical Data Case: TO-92 Plastic Package max.∅ Weight: approx
B C 3 2 7 / 3 2 BC327/328 8 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor
51 R R7 5,3k R5 1k LED D0 orange 5 mm ultra-bright LED D1 orange 5 mm ultra-bright 660k R4 910k R3 BC338-26 Q1 BC558-B Q2 Opto-Transistor Q3 nissen 931013 LED Version Title Baustellenleuchte - Nissen Author File Schaltplan\BaustellenleuchtenNissen_003.dsn Revision 1.0 Date 08.08.2007 Sheets 1 of 1
I L R V RF OUT R704 0.1 R716 R718 330 R723 R725 10µ 0.1 R730 R731 R733 R735 N V E E O I I . 2 910 BC R707 R710 R711 AMP 1k 150 16V BC T V 1 A A I U UD S V C BUFF. 47 11.7R709 270 330 18k 470 Q704 10.9 9.9 330 18k 47 11.9 47 11.9 O 1 S L C T T T O O . N . V E C U C732 R702 8.5 Q702 150 10.3 BUFF. BUFF
1000PF 20% 1KV CT 32315 8301-003-858 SMD-TRANS.BC 858 B IC 34015 8305-338-844 IC TDA8844 R 60008 S 8705-369-105 MOW 0617 22 KOHM 5% C 60026 8650-081-125 HV-KERKO 1000PF 20% 1KV CT 32415 8301-004-848 SMD-TRANS.BC 848 B IC 40000 8305-367-297 IC TDA7297
A 1 3R3 47 8 DI SD 9 SS C OMP SG3525A T201 2 3 R211 T02 R C 20 22 C 25 C201 C205 C224 0 k C 22 1n BC337-40 1 k BC337-0 R 4 n.b. R 1 1n 4n7 16V 22n Bild 6: Pulsbreitenmodulator des SPS 9540 ELVjournal 4/00 9 Bau- und Bedienungsanleitung /I_ EF S e k u n d ä rs e i e +U rf D203 ST202 1N4002 op- 1 +12V
858 B IC 35400 8305-338-395 IC TDA8395P/N2 SI 40012 S 8315-619-028 LOET-SI.-GR 1,6 A/T C 54002 8650-067-046 HV-KERKO 100PF 20% 1KV CT 34031 8301-003-858 SMD-TRANS.BC 858 B IC 35430 8305-334-665 IC TDA4665/V4/ U3665M-M SI 52001
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