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PDF
FMMT620.pdf
antimony compounds. Marking Information 620 620 = Product Type Marking Code FMMT620 1 of 7 March 2010 Document number DS32123 Rev. 2 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated FMMT620 Maximum Ratings @T =A25
in „SMD Transistor für 5V/0,5A mit geringem Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PMBFJ620_1.pdf
10 - - mS fs DS admittance D = 10 mA Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 2. Pinning information Table 2: Discrete pinning information Pin Description Simplified outline Symbol 1 source
in „Doppelfet für Vorstufe“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TLP620DS.PDF
TLP620DS.PDF
in „Wechselspannung messen/überwachen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Gigabyte-Affected-Models.pdf
10 B550M-DS3H-AC-rev-14 A520M-S2H-rev-1x B460M-POWER-rev-10 B550M-DS3H-AC-rev-15-16 A620M-GAMING-X-AX-rev-10 B550-AORUS-ELITE-AX-V2-rev-12 B550M-DS3H-AC-rev-17 A620M-GAMING-X-rev-10 B550-AORUS-ELITE-AX-V2-rev-12-13 B550M-DS3H-AC-rev-1x A620M-H-rev-10 B550-AORUS-ELITE-AX-V2-rev-14 B550M-DS3H-rev-10-11-12-13 A620M-S2H-rev-10 B550-AORUS-ELITE-AX-rev-10 B550M-DS3H-rev-14 B360M-DS3H-rev-10 B550-AORUS-ELITE-V2-rev-12 B550M-DS3H-rev
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PDF
QX9920.pdf
Operating Frequency FMAX 1000 KHz Cutoff Time Minimum Cutoff Time TOFF_MIN TOFF Pin without Capacitor 620 ns Enable Input On EN Pin “High” Voltage Level On EN Pin 0.4*VDD V “Low” Voltage Level On EN Pin 0.2 V QX9920_DS02EN QX Micro Devices Co., Ltd. 5 of 9 www.qxmd.com.cn QX9920 Buck Type High-power LED
in „Fuxon F20 Fahrradlicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Platinfuchs_IIa_Schematic-and-Layout.pdf
1N4148WS 4,7µF Z Z D3 35V V V * LED yellow D8 C9 N C22 C23 R4 R5 R6 R7 R8 R9 R10 R11 BZT52C13 22µF * 620K 2,2R 2,2R 620K 620K 2,2R 2,2R 620K Zener: 13V 16V 150pF 150pF *GND* *GND* *GND* *GND* *GND* *GND* *GND* *GND* *GND* GND GND GND GND GND GND GND R12 R13 27K 27K *VCC* VCC *Uin* *VCC* *VZK* *3V3* *3V3
in „Platinfuchs IIa: Isolierter, bidirektionaler 45W DC/DC Wandler zum Laden/Entladen eines Liion-Akkus“ · Projekte & Code ·
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PDF
ga1.pdf
0.014) 0.320(0.013) 0.320(0.013) 0.540(0.021) 0.540(0.021) 0.450(0.018) 0.480(0.019) 3.000(0.118) 0.620(0.024) TYP 3 R0.150(0.006) 10 Option 1 Option 2 1.550(0.061)REF 1.030(0.041)REF R 0.200(0.008) 0.320(0.013)REF 45 2.630(0.104) 1.620(0.064)REF 2.930(0.115) 2.210(0.087)REF 1.500(0.059) 1.620(0.064)
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PDF
IRLR7843C.pdf
°C 0.1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 e I = 30A c D ) t VGS = 10V ( i t e n R r 100 n 1.5 u T J 175°C e ) e r d r o i o - al - t r t TJ= 25°C i o i 10
in „H-Brücke - 30A - MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
viper20.pdf
VIPer20/SP/DIP VIPer20A/ASP/ADIP ∪ SMPS PRIMARY I.C. TYPE VDSS n R DS(on) VIPer20/SP/DIP 620V 0.5 A 16 VIPer20A/ASP/ADIP 700V 0.5 A 18 PENTAWATT HV PENTAWATT HV (022Y) FEATURE ADJUSTABLE SWITCHING FREQUENCY UP TO200KHZ 10 CURRENT MODE CONTROL 1 SOFTSTART AND SHUT DOWN
in „Besonders sparsame Standby-Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lt1153.pdf
Breaker Over-Voltage Circuit Breaker 12V 4.75V TO 5.25V + + 100 F 10 F IN VS IN V S 5V 5V 100 51k CT DS 51k CT DS 0.47 F LTC1153 5V 0.22 F LTC1153 5.6V STATUS G MTD3055E STATUS G IRLD024 30k GND SD GND SD *PTC LOAD LOAD (100°C)TOR *RL3006-50-100-25-PT0 KEYSTONE LTC1153 • TA03 SWITCH IS SHUTDOWN WHEN V
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LUXEON_K2_BLAU_LXK2_PB14_N00.pdf
140 Blue 460 nm 470 nm 490 nm 25 0.04 160 140 Royal Blue[3] 440 nm 455 nm 460 nm 20 0.04 160 140 Red 620.5 nm 627 nm 645 nm 20 0.05 160 140 Red Orange 613.5 nm 617 nm 620.5 nm 20 0.06 160 140 Amber 584.5 nm 590 nm 597 nm 14 0.09 160 140 Notes for Table 2: 1. Test current is 350 mA for all LXK2 xx12 xxx
in „[S] LED aus Feuerwehr Singalleuchte (Blitzlicht)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AKG_d3800_cutsheet.pdf
Vienna/AUSTRIA Nashville, TN 37217, U.S.A. Tel: (43 1) 86 654-0*, Fax: (43 1) 86 654-516 Tel: (615) 620-3800, Fax: (615) 620-3875 Internet: http://www.akg.com Studer Japan Ltd. AKG Acoustics; A Division of Harman Pro Germany 2-43-7, Uehara, Shibuya-ku, Tokyo 151-0064/JAPAN Bodenseestraße 228, D-81243
in „Kann ein Kopfhörerausgang ein Mikrofon zerstören?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
JXI5020.pdf
սіژݼ ਈҩ่ࡱ ቋཬᆴ ၂Ϯᆴ ቋնᆴ ֆ໊ ჷ V DD - 3.0 3.3 4.5 V ൻԛ؊ର൳ V DS OUT0 ~OUT15 - - 17.0 V IOUT ҕॉᆰੀหྟ֥ҩ൫ਫ਼ 3 - 30 mA ൻԛ؊ੀ IOH SDO - - -1.0 mA IOL SDO - - 1.0 mA ໊໊ۚሙ V IH Ta=-40~85ºC 0.7*VDD - VDD V ൻೆ؊ ໊໊֮ሙ V IL Ta=-40~85ºC GND - 0.3*VDD V ൻԛ؊ੀ IOH V DS7.0V - - 0.5 µA V OL IOL+1.0mA - - 0.4 V ൻԛ؊ SDO V OH IOH-1.0mA 2.9 - - V ൻԛੀ 1 IOUT1 V DS.0V Rext000Ω - 3.1 - mA IOL3.1mA ੀொ၍ਈ dIOUT1 Rext6000Ω - ±1.5 ±2.5 % V DS=1.0V ൻԛੀ 2 IOUT2 V DS.0V Rext20Ω - 25.8 - mA IOL=25.8mA ੀொ၍ਈ dIOUT2 V DS=1.0V Rext720Ω - ±1.5 ±2 % ੀொ၍ਈ vs. ൻԛ %/dV DS ൻԛ
in „Chinesische IC und ihre Verwandschaft“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STB10NK60Z.pdf
= 0) VDS = Max Rating, µA GS 50 I Gate Body Leakage Current V = ±15V, V = 0 ±10 µA GSS (VDS= 0) GS DS V Gate Threshold Voltage V = V , I = 250 µA 3 3.75 4.5 V GS(th) DS GS D Static Drain-Source On RDS(on) VGS = 10 V,DI = 20 A 0.65 0.75 Ω Resistance Table 6. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfsNote 4 Forward Transconductance V DS=15V, D = 4.5A 7.8 S Ciss Input Capacitance 1370 pF C oss Output Capacitance V DS=25V, f=1 MHz, GS =0 156 pF Reverse Transfer Capacitance 37 pF C rss Coss eq. Note 5 Equivalent Ouput Capacitance GS=0,
in „Ersatz für STB10NK60Z“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LCC110-form-C.pdf
0.005) Pin 1 3.302 ± 0.051 0.457 ± 0.076 (0.130 ± 0.002) (0.018 ± 0.003) 7.239 TYP. 7.620 ± 0.127 (0.285) (0.300 ± 0.005) 7.620 ± 0.127 4.064 TYP 0.254 ± 0.0127 (0.300 ± 0.005) (0.160) (0.010 ± 0.0005) Dimensions 0.813 ± 0.102 mm (0.032 ± 0.004) (inches) LCC110S 9.652 ± 0.381 PCB Land Pattern
in „Optokoppler nicht invertierend ohne zusätzliche Schaltung am Ausgang“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf4905.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 100 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V = ± 20V ±100 nA IGSS GS Current (DS = 0) ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th
in „Schaltungsfrage zu OpAmp und Stromsenke“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf840_und_irf840fi.pdf
Voltage V = V I = 250 A 2 3 4 V GS(th) DS GS D R DS(on) Static Drain-source On V GS = 10V D = 4.4 A 0.74 0.85 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)maxVGS = 10 V 8 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max ID= 4.4 A 4.9 6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz V GS= 0 1100 1500 pF Coss Output Capacitance 190 240 pF Crss Reverse Transfer 80 110 pF Capacitance
in „Unterschied zw. IRF840 und IRF840FI“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ixys_21N100Q.pdf
VDS= 0 ±100 nA • PLUS 247TMpackage for clip or spring mounting I V = V 100 µA • Space savings DSS DS DSS VGS = 0 V TJ= 125°C 2 mA • High power density R V = 10 V, I = 0.5 • I 0.50 Ω DS(on) GS D D25 Note 1 © 2002 IXYS All rights reserved DS98677D(10/03) IXFK 21N100Q IXFX 21N100Q Symbol TestConditions
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STP3NB90FP.pdf
th) Gate Threshold V DS= VGS D = 250 A 3 4 5 V Voltage R DS(on) Static Drain-source On V GS= 10V ID= 1.7 A 4 4.2 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)max 3.5 A V GS= 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max D = 1.7 A 1.6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz VGS = 0 700 pF Coss Output Capacitance 90 pF C Reverse Transfer 7 pF rss Capacitance 2/6 STP3NB90/FP ELECTRICAL
in „unbek. TO220 Bauteil in einem Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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Datei
armbian_modules.txt
max1111 f71882fg ina209 sht21 jc42 pcf8591 vt1211 sht15 hwmon-vid ds620 ntc_thermistor adt7462 lm92 ads1015 lm77 ltc2945 lm70 max6639 max31722 w83793 lm75 tc74 pc87427 ina3221 w83795 lm90 lm95241 nct7904 hih6130 lineage-pem sch5627 lm95245 adm9240 mcp3021 f71805f g760a
in „Samba auf Banana Pi Pro installieren“ · PC Hard- und Software ·
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PDF
IRF830.pdf
VDS = VGS ID= 250 A 2 3 4 V Voltage R Static Drain-source On V = 10V I = 2.7 A 1.35 1.5 DS(on) GS D Resistance ID(on) On State Drain Current VDS > ID(on) RDS(on)max 4.5 A VGS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (∗) Forward V > I x R I = 2.7 A 2.5 S fs DS D(on) DS(on)max D Transconductance C Input Capacitance V = 25 V f = 1 MHz V = 0 610 pF iss DS GS Coss Output Capacitance 120 pF Crss Reverse Transfer 10 pF Capacitance 2/8 IRF830 ELECTRICAL CHARACTERISTICS (continued
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DSO203.pdf
Mini DS203 OSC Manual 1 Intro DS203 V2.6 is a pocket size 4 channel digital Oscilloscope for common electronic engineering tasks. It's based on ARM cortex M3 (STM32F103VCT6) 32 bits platform, providing 72MS/
in „Welches aktuelle DSO ist gut ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
spp20n60s5_eng_tds.pdf
SPP20N60S5 Cool MOS™ Power Transistor V DS 600 V Feature R DS(on) 0.19 Ω • New revolutionary high voltage technology D 20 A • Worldwide best R in TO 220 DS(on) • Ultra low gate charge PG-TO220 2 • Periodic avalanche rated • Extreme dv/dt rated
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUZ11.pdf
BUZ11 ∪ N - CHANNEL 50V - 0.03 - 33A TO-220 STripFET∧ MOSFET TYPE VDSS R DS(on) ID BUZ11 50 V < 0.04 33 A TYPICAL R DS(on)= 0.03 AVALANCHERUGGED TECHNOLOGY 100%AVALANCHE TESTED HIGH CURRENT CAPABILITY 175 C OPERATINGTEMPERATURE 23 1 APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED
in „Transistorschalter für Glühlampe 12V 5W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OB2223CPA.pdf
(BSC) 0.014 E n - 6.096 7.1120 0.240 0.280 O e1 7.320 2.540 (BSC) 8.255 0.288 0.1 (BSC) 0.325 E2 7.620 10.920 0.300 0.430 ©On-Bright Electronics Confidential OB_DOC_DS_2223A0 - 10 - High Precision Low Cost MCM Power Switch RIGHT TO MAKE CHANGES IMPORTANT NOTICE or service without notice. Customers should
in „SMD IC "G1768A" Datenblatt gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2991.pdf
Typical Performance Characteristics 2 M L Dropout Voltage Normalized Output Voltage Output Voltage DS011260-13 DS011260-14 DS011260-15 Output Noise Voltage Quiescent Current Maximum Output Current DS011260-16 DS011260-17 DS011260-18 Line Transient Response Load Transient Response Maximum Output Current DS011260-19 DS011260-20 DS011260-21 Ripple Rejection Output Impedance ON /OFF Control Voltage DS011260-22 DS011260-23 DS011260-24 www.national.com 4 L M Typical Performance Characteristics (Continued) 9
in „Negative Low Dropout Adjustable Regulator gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STP16NF_--_156110-da-01-en-PWRMOS_60V_16A_STP16NF06L_STM.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
in „Fragen zu Vorwiderständen (?) und MOSFET-Auswahl bei 12V-Steuerung am Raspberry Pi“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TXSTM-POWERMOSFET-STX-16NF06L_EN.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
in „TLC5940 (Arduino Mega) flackert. Wie Kondensatoren einsetzen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RT8298E-02.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. © www.richtek.com DS8298E-02 October 2015 8 RT8298E Switching Frequency vs. Temperature Current Limit vs. Temperature 650 12.0 )640 11.5 z630 k ) 11.0 (620 ( c t e610 e 10.5 u r e600 u 10.0 F t g590 p 9.5 i580 u c O 9.0
in „Schaltregler - maximaler Spulenstrom“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. © www.richtek.com DS8298E-02 October 2015 8 RT8298E Switching Frequency vs. Temperature Current Limit vs. Temperature 650 12.0 )640 11.5 z630 k ) 11.0 (620 ( c t e610 e 10.5 u r e600 u 10.0 F t g590 p 9.5 i580 u c O 9.0
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. © www.richtek.com DS8298E-02 October 2015 8 RT8298E Switching Frequency vs. Temperature Current Limit vs. Temperature 650 12.0 )640 11.5 z630 k ) 11.0 (620 ( c t e610 e 10.5 u r e600 u 10.0 F t g590 p 9.5 i580 u c O 9.0
in „Woher Eingangsschwingung am Buck“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl1404.pdf
contact S Ciss Input Capacitance ––– 6590 ––– VGS = 0V C Output Capacitance ––– 1710 ––– pF V = 25V oss DS Crss Reverse Transfer Capacitance ––– 350 ––– ƒ = 1.0MHz, See Fig. 5 C Output Capacitance ––– 6650 ––– V = 0V, V = 1.0V, ƒ = 1.0MHz oss GS DS Coss Output Capacitance ––– 1510 ––– VGS = 0V, VDS= 32V,
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Freq-Spannungswandler.pdf
Output vs Temperature 2 9 7 DS007942-40 DS007942-41 DS007942-42 Normalized Tachometer Tachometer Currents I 2 Tachometer Currents I 2 Output vs Temperature and I3vs Supply Voltage and I3vs Temperature DS007942-43 DS007942-44 DS007942
in „LM2907/17 Frequenz-Spannungswandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Freq-Spannungswandler.pdf
Output vs Temperature 2 9 7 DS007942-40 DS007942-41 DS007942-42 Normalized Tachometer Tachometer Currents I 2 Tachometer Currents I 2 Output vs Temperature and I3vs Supply Voltage and I3vs Temperature DS007942-43 DS007942-44 DS007942
in „Frequenz Spannungswandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NSC.pdf
Output vs Temperature 2 9 7 DS007942-40 DS007942-41 DS007942-42 Normalized Tachometer Tachometer Currents I 2 Tachometer Currents I 2 Output vs Temperature and I3vs Supply Voltage and I3vs Temperature DS007942-43 DS007942-44 DS007942
in „Frequenz Spannungswandler Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Transistoren_cht.pdf
99 - 30 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part VDSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement IRFS620A 200 0.8 4.1 32 TO-220IS 2SK2381 A Samsung IRFS624A 250 1.1 3.4 34 TO-220IS 2SK2840 A Samsung IRFS630A 200 0.4 6.5 38
in „Frage Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Power_MOSET_Cross_reference.pdf
99 - 30 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part VDSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement IRFS620A 200 0.8 4.1 32 TO-220IS 2SK2381 A Samsung IRFS624A 250 1.1 3.4 34 TO-220IS 2SK2840 A Samsung IRFS630A 200 0.4 6.5 38
in „Schaltregler Fragen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfp2907.pdf
= 20V IGSS Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Q g Total Gate Charge ––– 410 620 D = 125A Q Gate-to-Source Charge ––– 92 140 nC V = 60V gs DS Q gd Gate-to-Drain ("Miller") Charge ––– 140 210 VGS = 10V t Turn-On Delay Time ––– 23 ––– V = 38V d(on) DD tr Rise Time ––– 190 ––– D =
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP2907.pdf
= 20V IGSS Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Q g Total Gate Charge ––– 410 620 D = 125A Q Gate-to-Source Charge ––– 92 140 nC V = 60V gs DS Q gd Gate-to-Drain ("Miller") Charge ––– 140 210 VGS = 10V t Turn-On Delay Time ––– 23 ––– V = 38V d(on) DD tr Rise Time ––– 190 ––– D =
in „Auto-Kühler-Lüfter per PWM manuell steuern“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
viper100-e.pdf
VIPer100-E SMPS PRIMARY I.C. General Features Type VDSS In RDS(on) VIPer100-E 620V 3 A 2.5 Ω ■ ADJUSTABLE SWITCHINGFREQUENCY UP PENTAWATT HV PENTAWATT HV (022Y) TO 200 kHz ■ CURRENT MODE CONTROL ■ SOFT START AND SHUTDOWN CONTROL Description ■ AUTOMATIC BURST MODE OPERATION IN STAND-BY
in „Hochvoltspannungsregler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
VIPer100.pdf
VIPer100-E SMPS PRIMARY I.C. General Features Type VDSS In RDS(on) VIPer100-E 620V 3 A 2.5 Ω ■ ADJUSTABLE SWITCHINGFREQUENCY UP PENTAWATT HV PENTAWATT HV (022Y) TO 200 kHz ■ CURRENT MODE CONTROL ■ SOFT START AND SHUTDOWN CONTROL Description ■ AUTOMATIC BURST MODE OPERATION IN STAND-BY
in „VIPer50 Flyback Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
40146F.pdf
Microchip Technology Inc. DS40146F-page 35 HCS361 DS40146F-page 36 © 2011 Microchip Technology Inc. HCS361 APPENDIX A: ADDITIONAL REVISION HISTORY INFORMATION Revision F (June 2011) Microchip’s Secure Data Products are covered by
in „Fehlersuche Funksender Zentralverriegelung Toyota Yaris“ · Fahrzeugelektronik ·
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PDF
irlr120n.pdf
= 5.0V, D = 6.0A ––– ––– 0.265 V GS= 4.0V, D = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS, D = 250µA gfs Forward Transconductance 3.1 ––– ––– S V DS= 25V, D = 6.0A I Drain-to-Source Leakage Current ––– ––– 25 V DS= 100V, VGS = 0V DSS ––– ––– 250 µA V DS= 80V, VGS = 0V, J = 150°C I Gate-to-Source
in „was ist denn da los.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IOR__IRFR6215.pdf
On-Resistance––– ––– 0.58 V GS= -10V, D = -6.6A TJ= 150°C VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V V DS= VGS ,DI = -250µA gfs Forward Transconductance 3.6 ––– ––– S V DS= -50V, D = -6.6A I Drain-to-Source Leakage Current ––– ––– -25 V DS= -150V, VGS = 0V DSS ––– ––– -250 µA V DS= -120V, VGS = 0V, J = 150
in „wie 24V-Busspannung mit 3,3V schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf9z34n.pdf
package LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 620 ––– VGS = 0V C Output Capacitance ––– 280 ––– pF V = -25V oss DS Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P-MOSFET_IRF9Z34N.pdf
package LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 620 ––– VGS = 0V C Output Capacitance ––– 280 ––– pF V = -25V oss DS Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max
in „Pegelwandler 0/5V zu 5V/-9V“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM334.pdf
Performance Characteristics M / 3 Output Impedance Maximum Slew Rate 2 Linear Operation M / 3 1 M L DS005697-30 DS005697-31 Start-Up Transient Response DS005697-32 DS005697-33 Voltage Across RSET(VR) Current Noise DS005697-34 DS005697-35 www.national.com 4 L M 1 Typical Performance Characteristics (Continued
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PDF
LM2660_DC_Inverter.pdf
Resistance vs Supply Voltage DS012911-7 DS012911-8 DS012911-9 Output Source Efficiency vs Load Resistance vs Output Voltage Drop Temperature Current vs Load Current DS012911-11 DS012911-12 DS012911-10 3 www.national.com 1 6 2 Typical
in „Negative Betriebsspannung erzeugen“ · Analoge Elektronik und Schaltungstechnik ·
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TB053_Generatirng_High_Voltage_with_PIC16C781.pdf
Power Supply + Design , McGraw-Hill, New York, 1998. +170 VOUT + © 2005 Microchip Technology Inc. DS91053B-page 3 TB053 APPENDIX A: SCHEMATICS FIGURE A-1: HIGH-VOLTAGE DRIVER DISPLAY CONTROL +9 VDC 330 μH +170 VDC (to Display) +5V 7805 +5V 10 μF P 470 kΩ 350V C .1 μF .1 μF .1 μF .1 μF IRF620 1 100 μF
in „Nixie Netzteil“ · Analoge Elektronik und Schaltungstechnik ·
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IRF9Z34-Vishay.pdf
S Dynamic Input Capacitance C iss V = 0 V, - 1100 - GS Output Capacitance Coss V DS = - 25 V, - 620 - pF Reverse Transfer Capacitance C f = 1.0 MHz, see fig. 5 - 100 - rss Total Gate Charge Qg - - 34 ID = - 1 8 A, Gate-Source Charge Q gs V GS = - 10 V VDS = - 48 V, - - 9.9 nC see fig
in „Saito Pro Charger Batterieladegerät - Mikrocontroller ATmel ATTINY26L defekt?“ · Mikrocontroller und Digitale Elektronik ·