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Datei
DS80C400.txt
FEATURES High-Performance Architecture Single 8051 Instruction Cycle in 54ns DC to 75MHz Clock Rate Flat 16MB Address Space Four Data Pointers with Auto-Increment/Decrement and Select-Accelerate Data Movement 16/32-Bit Math Accelerator Multitiered Networking and I/O 10/100 Ethernet Media Access Controller (MAC) CAN 2.0B Controller 1-Wire Net Controller Three Full-Duplex Hardware Serial Ports Up to Eight Bidirectional 8-Bit Ports (64 Digital I/O Pins) Robust ROM Firmware Supports Network Boot Over Ethernet Using DHCP and TFTP Full, Application-Accessible TCP/IP Network Stack Supports IPv4 and IPv6 Implements
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VMO1200-01F.pdf
4 - 6 VMO 1200-01F 16 1600 100 1000 r RG = 1.8 Ω R = 1.8 Ω V = 50 V G DS 80 VDS= 50 V 800 12 VGS= 0/10 V 1200 V = 0/10 V tr T = 125°C GS VJ TVJ= 125°C Eon Erec t E 60 td(off)600 t off 8 800 [mJ] [ns] [mJ] 40 400 [ns] Eon t 4 d(on400 20 200 E E 0 rec(off) 0 0 off 0 0 200 400
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VMO1200-01F.pdf
4 - 6 VMO 1200-01F 16 1600 100 1000 r RG = 1.8 Ω R = 1.8 Ω V = 50 V G DS 80 VDS= 50 V 800 12 VGS= 0/10 V 1200 V = 0/10 V tr T = 125°C GS VJ TVJ= 125°C Eon Erec t E 60 td(off)600 t off 8 800 [mJ] [ns] [mJ] 40 400 [ns] Eon t 4 d(on400 20 200 E E 0 rec(off) 0 0 off 0 0 200 400
in „Wie wähle ich Treiber für VMO1200-01F?“ · Mikrocontroller und Digitale Elektronik ·
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stgw60h65dfb.pdf
18. Switching times vs gate resistance GIPD280820131613FSR GIPD280820131622FSR t t (ns) (ns) TJ=175°C, VGE =15V tdoff I =60A, V =400V C CC tdoff 100 tdon 100 tr tdon 10 tf tf TJ=175°C,GE=15V tr Rg=10Ω, CC=400V 1 10 0 20 40 60 80 100 C (A) 4 8 12 16 20 Rg(Ω) DS9535 - Rev 8 page 7/21 STGW60H65DFB, STGWA60H65DFB
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LM10.PDF
regulation: 0.(max) e pendent of fixed supplies. It can function as a remote com-t voltage drift: 2µV/˚C R parator, signal conditioner, SCR controller or transmitter fore drift: 0.002 /˚C e e Connection and Functional Diagrams r n Metal Can Package (H) c Small Outline Package (WM) e DS005652-1 DS005652-
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SW6007.pdf
/C_OVP 输入电压上升 5.5 5.6 5.7 V VBUSB/VBUSC VBUSB/C_OVP_ VBUSB/VBUSC 200 300 400 mV 输入过压门限迟滞 HYS 输入电压下降 Boost 或 V BUSBVBUSC接入 4.5 5 5.35 V VCC 输出电压 V CC 关机 VBAT V Boost 或 V BUSBVBUSC接入 40 60 80 mA VCC 输出电流
in „I2C: Li/ion Mobile Power Shield SW6007<->SW6115“ · Mikrocontroller und Digitale Elektronik ·
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MRF272L.pdf
= 225 MHz 90 ) 140 ) T 400 MHz T 80 A 120 A ( ( 70 R 100 500 MHz R W W 60 O O T 80 T 50 U U 40 T 60 T O O 30 ,u 40 ,u V DS= 28 V Po VDD = 28 V Po 20 IDQ = 100 mA 20 DQ = 100 mA P in Constant 10 f = 500 MHz 00 2 4 6 8 10 12 14
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MCP3221.pdf
Technology Inc. DS21732B-page 7 MCP3221 Note: Unless otherwise indicated, V DD = 5V, VSS = 0V, I C Fast Mode Timing (SCL = 400 kHz), Continuous Conversion Mode (f SAMP = 22.3 ksps), T =A+25°C. 3 2 1.8 ) 2 ) 1.6 B S L 1
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ds_22.pdf
properties of the plastic. Wrench size: 8 mm 5. Work must not be performed on parts that are powered. DSX 80 / DS 80 Heating power: 80 W / 24 V~ Heating resistance: 6,2 ohm Heating-up time: ~ 80 sec. from 50°C - 350°C Field of activity with Sn Pb 37/63: 270°C - 450°C 5 Heruntergeladen von manualslib.de Handbücher-Suchmachiene
in „Fehleranalyse Entlötstation Weller VP 801 EC“ · Mechanik, Gehäuse, Werkzeug ·
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irfb3077pbf.pdf
g 16 VDS= 38V )12000 oss ds gd l VDS= 17V F o ( Ciss V c r 12 a u c 8000 S a t a e 8 , a C G 4000 ,S G 4 V Coss Crss 0 0 0 40 80 120 160 200 240 280 1 10 100 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical
in „Suche nach Treiber für Power-Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LUXEON_K2_BLAU_LXK2_PB14_N00.pdf
K2 Emitter Datasheet DS51 (5/06) 17 Current Derating Curve for 350 mA Drive Current Red, Red Orange and Amber 400 ) A 350 m t 300 n e 250 u C 200 d RJ A50ºC/W r RJ A40ºC/W w 150 RJ A30ºC/W r F 100 - I 50 0 50 75 100 125 150
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Infineon-IPA50R190CE-DS-v02_04-EN.pdf
Min. Typ. Max. Input capacitance C iss - 1137 - pF V GSV, V =1DSV, f=1MHz Output capacitance C - 68 - pF V =0V, V =100V, f=1MHz oss GS DS Effective output capacitance, energy 1) C o(er) - 56 - pF V GSV, V =0DS.400V related Effecti2) output
in „Mosfet 5R190CE“ · Analoge Elektronik und Schaltungstechnik ·
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MOSFET.pdf
(Energy Related)––– 1550 ––– V = 0V, V = 0V to 80Vi , See Fig. 11 oss GS DS C osseff. (TR)Effective Output Capacitance (Time Related) ––– 900 ––– VGS = 0V, DS = 0V to 80Vh Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous
in „LeistungsMosfet Kühlfläche als Drain-Anschluss nutzen“ · Analoge Elektronik und Schaltungstechnik ·
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2243913.pdf
H I R -400 100 400kHz, 2.7V 100kHz, 2.7V 50 -600 50 RHVC -800 0 0 -1000 -40 0 40 80 120 2 3 4 5 6 7 8 9 10 Temperature (°C) VHVC(V) FIGURE 2-1: Device Current (I DD ) vs. I C FIGURE 2-4: HVC Pull-up/Pull-down
in „[V] 11St. SMD Dual Digital Poti - I2C Microchip MCP4561-103 10kOhm 256Steps Nonvolatile (8€)“ · Markt ·
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22107B-1180063.pdf
H I R -400 100 400kHz, 2.7V 100kHz, 2.7V 50 -600 50 RHVC -800 0 0 -1000 -40 0 40 80 120 2 3 4 5 6 7 8 9 10 Temperature (°C) VHVC(V) FIGURE 2-1: Device Current (I DD ) vs. I C FIGURE 2-4: HVC Pull-up/Pull-down
in „[V] 24St SMD Digital I2C / 256 Steps 5K Dual Poti Microchip MCP4561- 502E/MS (MSOP8) (alle 15€)“ · Markt ·
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2243913.pdf
H I R -400 100 400kHz, 2.7V 100kHz, 2.7V 50 -600 50 RHVC -800 0 0 -1000 -40 0 40 80 120 2 3 4 5 6 7 8 9 10 Temperature (°C) VHVC(V) FIGURE 2-1: Device Current (I DD ) vs. I C FIGURE 2-4: HVC Pull-up/Pull-down
in „[V] 44St. SMD Digital I2C / 256 Steps 10K Poti Microchip MCP4561- 103E/MS (MSOP8 Gehäuse)“ · Markt ·
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2243913.pdf
H I R -400 100 400kHz, 2.7V 100kHz, 2.7V 50 -600 50 RHVC -800 0 0 -1000 -40 0 40 80 120 2 3 4 5 6 7 8 9 10 Temperature (°C) VHVC(V) FIGURE 2-1: Device Current (I DD ) vs. I C FIGURE 2-4: HVC Pull-up/Pull-down
in „[V] 10St. Digitalpoti MCP4561-103E/MS 8MSOP orginalverpackt. (9€)“ · Markt ·
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sct2080ke.pdf
nA GSS GS DS V V = V , I = 4.4mA Gate threshold voltage GS (th) DS GS D 1.6 - 4.0 V VGS= 18V, ID= 10A Static drain - source *3 R DS(on) Tj= 25°C - 80 117 m on - state resistance Tj= 125°C - 125 - Gate input resistance
in „Verarmungs- oder Anreicherungstyp“ · Analoge Elektronik und Schaltungstechnik ·
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MOC3041-M.pdf
Figure 4. Leakage Current, I vs. Temperature DRM 1.3 10000 1.2 1000 A ( T N E R 100 I 1.1 R L U M C R G O A , 1.0 A 10 T E IF , M ID 1 0.9 NORMALIZoD TO TA= 25 C 0.1 0.8 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 T , AMBIENT TEMPERATURE ( C) o T A AMBIENT TEMPERATURE ( C) o A DS300256 8/06
in „Triac schaltet nicht ab“ · Mikrocontroller und Digitale Elektronik ·
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XLamp7090XR-E.pdf
documen4600 Silicon Driveange without notice. Cree, Durham, NC 27703 USA Tel: +1.919.313.5300 6 CLD-DS05.011 www.cree.com/xlamp Electrical Characteristics (T = 25˚C) J 1000 900 ) 800 A m 700 ( n e 600 u 500 C r 400 a Thewma300esign r o F 200 100 0 0.0 1.0 2.0 3.0 4.0 5.0 Forward Voltage (V) 1200 Thermal
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IPB026N06N.pdf
360 7 5 V 5.5 V 6 V 320 6 V 6 280 240 ] 5 W ] [ [ 200 5.5 V ) 4 D ( I D 160 R 3 7 V 120 10 V 5 V 2 80 1 40 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 80 160 240 320 400 VDS [V] ID[A] 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(V GS); |VDS|>2|ID|R DS(on)max g fs(I D; T j25 °C parameter: T j 400 200 360 320 150 280 240 ] ] [ 200 [ 100 D f I g 160 120 50 80 40 175 °C 25 °C 0 0 0 2 4 6 8 0 20 40 60 80 100 V [V] I [A] GS D Rev.2.2 page 5 2012-12-20 IPB026N06N 9 Drain-source on-state resistance
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ds.pdf
characteristics Figure 2. Typ. transfer characteristics 100000 10.0 f = 100 kHz ) I = 8 A V = 0 V ( D GS e V = 400 V 10000 t DS o 7.5 F C iss v ( c e 1000 u n o t - 5.0 c C a p 100 oss G a ,S , G C V 2.5 10 C rss 1 0.0 0 20 40 60 80 100 0 10 20 30 40 50 V DSDrain-source voltage (V) Qg, Gate charge(nC) Figure 3.
in „Ersatz für MOSFET OSG80R250F gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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sct2080ke-e.pdf
Voltage : DS[V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Ta= 25ºC f T a 25ºC ] VDD= 400V V DD= 400V V I= 10A 1000 V GS= 18V S 15 Pulsed s R G= 0Ω G [ Pulsed : : e e td(off) a
in „Datenblatt fraglich?“ · Analoge Elektronik und Schaltungstechnik ·
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IRFB3006_IR.pdf
Voltage (V) GS TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 16000 VGS = 0V, f = 1 MHZ 16 C = C + C , C SHORTED ID= 170A iss gs gd ds V V = 48V Crss = gd ( DS C = C + C g V DS= 30V )12000 oss ds gd l 12 F o ( C iss e c r n o i 8000 S 8 a t a e C a C G S 4 4000 Coss G V Crss 0 0 0 40 80 120 160 200 240 280 1 10 100 QG Total Gate Charge (nC) V , Drain-to-Source Voltage (V) DS
in „Motor PWM Steuerung, Mosfet Problem“ · Mikrocontroller und Digitale Elektronik ·
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RT9080-33GJ5_esp32_8622_low_quiescent_600mA.pdf
25 50 75 100 125 Temperature (°C) Temperature (°C) Output Voltage vs. Input Voltage Output Voltage vs. Load Current 0.90 1.00 0.88 0.95 0.86 0.90 V V ( 0.84 ( 0.85 g 0.82 g 0.80 l l o 0.80 o 0.75 V IN3V t t V IN= 5V u 0.78 u 0.70 t
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DS100728A_IXTN660N04T4_-1022876.pdf
Fig. 8. Transconductance 800 800 VDS = 5V V DS= 5V TJ= - 40ºC 700 700 600 600 25ºC s e500 n500 e e p e 150ºC m400 S400 - - D f I300 g300 TJ= 150ºC 25ºC - 40ºC 200 200 100 100 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 100 200 300 400 500 600
in „Suche Power-MosFet für etwa 600A“ · Analoge Elektronik und Schaltungstechnik ·
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OV528_DS_1.3.pdf
Register 4 00h 13h(160x128), 13h(80x64 for VGA), 13h(80x64 for CIF), 00h(Other) 9Ah SPC5 RW Special Control Register 5 00h 13h(160x128), 13h(80x64 for VGA), 13h(80x64 for CIF), 00h(Other) OV528 Datasheet Doc #DS201 © OmniVision Technologies
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DS_UJ3N120070K3S-1530204.pdf
breakdown voltage BV DS V GS- 20V, ID=1mA 1200 V V DS1200V, 5 30 VGS -20V, T J 25°C Total drain leakage current D mA V DS1200V, 18 V GS-20V, T J 175°C V =-20V, T=25°C 5 50 Total gate leakage current G GS j mA V GS20V, T=j75
in „SiC Kaskoden Body Diode“ · Analoge Elektronik und Schaltungstechnik ·
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0900766b81524b17.pdf
Characteristics (Typical) 10000 V 800 16 VGE = 0 V Tc = °C ( VCC = 400 V V f = 1 MHz E I = 45 A ( ) V C V E F Cies 600 Tc = 25C GE 12 V ( g C 1000 l g o l c r 400 8 o a t r c i t a 100 E i a t E C Coes r 200 4 t t VCE e Cres e a o G 10 C 0 0 0 50 100 150 200
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MRF175GV.pdf
RF POWER FETs Output Power — 200 Watts Power Gain — 14 dB Typ Efficiency — 65% Typ MRF175GU @ 28 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 12 dB Typ Efficiency — 55% Typ D 100% Ruggedness Tested At Rated Output Power Low Thermal Resistance G Low C — 20 pF Typ @ V = 28 V S rss DS G
in „Dimensionierung eines Kühlkörpers für HF-Modul“ · HF, Funk und Felder ·
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ga1.pdf
0.15 0.5 Ω KA f ≤ 1.0kHz — SOT23 — 135.48 — θJC — Thermal Resistance TO92 — 81.63 — °C/W — SOT89 — 29.80 — AZ431-A 5 of 19 March 2018 Document number: DS36721 Rev. 6 - 2 www.diodes.com © Diodes Incorporated AZ431-A Electrical Characteristics (Cont.) Test Circuit 4 for V KA= V REF Test
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PHC2300_3_1_.pdf
handbook, halfpaVGS = 10 V 5 V I ID VGS = −10 V D 4 V (mA) (mA) 3.5 V −600 3 V −4.5 V 800 −4.0 V −400 −3.5 V −3.0 V 400 2.5 V −200 −2.5 V −2.0 V 2 V 0 0 0 4 8 V (V) 12 0 −2 −4 −6 −8 −10 −12 DS VDS (V) Tamb= 25 °C;pt = 80 s; δ = 0. Tamb= 25 °C;pt = 80 s; δ = 0. Fig.8 Output characteristics; N-channel
in „[S] PHC2300 komplementär Mosfet SO8 / Bestellung Farnell/HBE“ · Markt ·
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rtc.pdf
-18 -40°C to +85°C 10 µSOP DS1390 rr-18 Medical Devices DS1390U-3 -40°C to +85°C 10 µSOP DS1390 rr-3 DS1390U-33 -40°C to +85°C 10 µSOP DS1390 rr-33 DS1391U-18 -40°C to +85°C 10 µSOP DS1391 rr-18 DS1391U-3 -40°C to +85°C 10 µSOP DS1391 rr-3 DS1391U-33 -40°C to +85°C 10 µSOP DS1391 rr-33 DS1392U-18 -40°C to +85°C 10 µSOP DS1393 rr-18 DS1392U-3 -40°C to +85°C 10 µSOP DS1392 rr-3 Typical Operating Circuits and
in „ein Uhrenquartz für AVR und RTC???“ · Mikrocontroller und Digitale Elektronik ·
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DS_IRFB7430.pdf
I = 100A Ciss = gs + gd, CdsSHORTED D C = C ) 12.0 rss gd ( VDS = 32V Coss = ds + gd g V = 20V ) l 10.0 DS ( o e Ciss V n r 8.0 i10000 u c S p C oss t 6.0 C C e , rss a C G 4.0 ,S G V 2.0 1000 0.0 1 10 100 0 50 100 150 200 250 300 350 400
in „MOSFET Steuer vs Hauptkreis“ · Analoge Elektronik und Schaltungstechnik ·
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RJH60F5DPQ.pdf
Emitter VoltageCE (V) Dynamic Input Characteristics (Typical) ) ( 800 V 16 ) E GE ( C E V VCE G e 600 12 V a V = 300 V e o CC a V 600 V o e 400 8 V i e m i E m r 200 V CC= 600 V 4 E t 300 V t e IC= 40 A t l Ta = 25°C G C 0 0 0 20 40 60 80 100 Gate Charge Qg (nc) R07DS0326EJ0200 Rev.2.00
in „Inverter Elektroden-Schweißgerät abgeraucht -> IGBT defekt“ · Analoge Elektronik und Schaltungstechnik ·
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DS-NEOZED-D0-fuse-links-gG-400-440VAC-DE.pdf
ckungs- Gewicht nummer nummer spannung spannung strom n abgabe bei In einheit AC (IEC) DC (IEC) D03GG40V80 L216716 400 V 250 V 80 A silber 5,6 W gG 10 41 g D03GG40V100 N212647 400 V 250 V 100 A rot 6,7 W gG 10 41 g D03GG40V80 Größe D01 (E14) gG Schiffbau Bemes- Bemes- Bemes- Bemessungs- Verpa- Katalog- Teile
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504925-panasonic-aqz202-photomos-relais-1-st-1-schliesser-60-vdc-60-vac-3000-ma-polzahl-4.pdf
1 1 AQZ1077 1 AQZ104 0 0 0 0 10 20 30 40 50 60 70 80 90100 0 50 100 150 200 250 300 350 400 0 0.5 1.0 1.5 2.0 2.5 3.0 Load voltage, V Load voltage, V Load current, A ds_x615_en_aqz10_20: 181206J 5 Power PhotoMOS (AQZ10P, 20P) 14.-(2) Turn on time vs. load
in „Suche Halbleiterelement als Ersatz für Relai in Radar-Bewegungsmelder“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
504925-panasonic-aqz202-photomos-relais-1-st-1-schliesser-60-vdc-60-vac-3000-ma-polzahl-4.pdf
1 1 AQZ1077 1 AQZ104 0 0 0 0 10 20 30 40 50 60 70 80 90100 0 50 100 150 200 250 300 350 400 0 0.5 1.0 1.5 2.0 2.5 3.0 Load voltage, V Load voltage, V Load current, A ds_x615_en_aqz10_20: 181206J 5 Power PhotoMOS (AQZ10P, 20P) 14.-(2) Turn on time vs. load
in „Welche Eigenschaften haben Solid State Relais, SSR ?“ · Offtopic ·
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PDF
504925-panasonic-aqz202-photomos-relais-1-st-1-schliesser-60-vdc-60-vac-3000-ma-polzahl-4.pdf
1 1 AQZ1077 1 AQZ104 0 0 0 0 10 20 30 40 50 60 70 80 90100 0 50 100 150 200 250 300 350 400 0 0.5 1.0 1.5 2.0 2.5 3.0 Load voltage, V Load voltage, V Load current, A ds_x615_en_aqz10_20: 181206J 5 Power PhotoMOS (AQZ10P, 20P) 14.-(2) Turn on time vs. load
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
504925-panasonic-aqz202-photomos-relais-1-st-1-schliesser-60-vdc-60-vac-3000-ma-polzahl-4.pdf
1 1 AQZ1077 1 AQZ104 0 0 0 0 10 20 30 40 50 60 70 80 90100 0 50 100 150 200 250 300 350 400 0 0.5 1.0 1.5 2.0 2.5 3.0 Load voltage, V Load voltage, V Load current, A ds_x615_en_aqz10_20: 181206J 5 Power PhotoMOS (AQZ10P, 20P) 14.-(2) Turn on time vs. load
in „Relais ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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4_5902390009465407372.pdf
1 1 AQZ1077 1 AQZ104 0 0 0 0 10 20 30 40 50 60 70 80 90100 0 50 100 150 200 250 300 350 400 0 0.5 1.0 1.5 2.0 2.5 3.0 Load voltage, V Load voltage, V Load current, A ds_x615_en_aqz10_20: 181206J 5 Power PhotoMOS (AQZ10P, 20P) 14.-(2) Turn on time vs. load
in „CD4066 als Relaisersatz?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1.5KE6V8A.PDF
Applied, see Notes 5 and 7. DS21503 Rev. 10 - 2 1 of 4 1.5KE6V8(C)A - 1.5KE400(C)A www.diodes.com ã Diodes Incorporated Max. Max. Max. Type Type Reverse Breakdown Voltage Reverse Clamping Max. Voltage Number Number Standoff V @ I
in „Welches Bauteil (Diode?) ist das?“ · Analoge Elektronik und Schaltungstechnik ·
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670135-DS01-1.pdf
” Charge Q - 42 - nC gd Input Capacitance C ISS V DS = 25V, GS = 0V, f = 1MHz (Figure 11) - 2000 - pF Output Capacitance COSS - 400 - pF Reverse Transfer Capacitance C RSS - 100 - pF Internal Drain Inductance L Measured
in „Suche IRFP 450B“ · Markt ·
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LM741.pdf
Product Reliability” for other methods of soldering surface mount devices. ESD Tolerance (Note 7) 400V 400V 400V 400V Electrical Characteristics (Note 4) Parameter Conditions LM741A/LM741E LM741 LM741C Units Min Typ Max Min Typ Max Min Typ Max Input Offset Voltage T = 25˚C A RS≤ 10 k 1.0 5.0 2.0 6.0
in „IC LM 741 DIP8 Daternblatt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Transistoren_cht.pdf
Reference Alphanumerically Part VDSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement STH80N05FI 50 0.012 52 70 TO-218IS 2SK2551 B ST STH8N80 800 1.2 8.2 180 TO-218 2SK2607 A ST STH8N80FI 800 1.2 5.1 70 TO-218IS
in „Frage Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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Power_MOSET_Cross_reference.pdf
Reference Alphanumerically Part VDSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement STH80N05FI 50 0.012 52 70 TO-218IS 2SK2551 B ST STH8N80 800 1.2 8.2 180 TO-218 2SK2607 A ST STH8N80FI 800 1.2 5.1 70 TO-218IS
in „Schaltregler Fragen“ · Analoge Elektronik und Schaltungstechnik ·
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DS4E-M-DC1.5V-Panasonic.pdf
packing: Carton: 50 pcs.; Case: 500 pcs. TYPES Single side stable Part No. Nominal Voltage, V DC 1 Form C 2 Form C 4 Form C 1.5 DS1E-M-DC1.5V DS2E-M-DC1.5V DS4E-M-DC1.5V 3 DS1E-M-DC3V DS2E-M-DC3V DS4E-M-DC3V 5 DS1E-M-DC5V DS2E-M-DC5V DS4E-M-DC5V M 6 DS1E-M-DC6V DS2E-M-DC6V DS4E-M-DC6V (400mW) 9 DS1E-M-DC9V
in „"Merkwürdiges" Relais.“ · Analoge Elektronik und Schaltungstechnik ·
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DSxE.pdf
packing: Carton: 50 pcs.; Case: 500 pcs. TYPES Single side stable Nominal Voltage, V DC Part No. 1 Form C 2 Form C 4 Form C 1.5 DS1E-M-DC1.5V DS2E-M-DC1.5V DS4E-M-DC1.5V 3 DS1E-M-DC3V DS2E-M-DC3V DS4E-M-DC3V M 5 DS1E-M-DC5V DS2E-M-DC5V DS4E-M-DC5V (400mW) 6 DS1E-M-DC6V DS2E-M-DC6V DS4E-M-DC6V type 9 DS1E-M-DC9V
in „Relais Polung“ · Mikrocontroller und Digitale Elektronik ·
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HY1403-HOOYI.pdf
50 ( n r r e 40 u o C 40 P i o 30 r P D 30 D 20 I 20 10 o o 0 TC=25 C 10 TC=25 C,V G10V 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Tc- Case Temperature (°C) T c-Case Temperature (°C) Safe
in „Alternative zu beschädigtem MOSFET?“ · Analoge Elektronik und Schaltungstechnik ·
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625945.pdf
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in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·