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macom2011.pdf
12.5 60 13 55 CW 2 - 30 MRF426 Bipolar 28 25 22 35 CW 2 - 80 MRF157 MOSFET 50 600 15 40 CW 2 - 100 MRF154 MOSFET 50 600 15 40 CW 2 - 128 MAPF250128-150000 MOSFET 100 150 19 40 CW 2 - 150 MRF140 MOSFET 28 150 14 35 CW 2 - 150 MRF150 MOSFET 50 150 17 45 CW 2 - 175 MRF141G MOSFET 28 300 12 45 CW 2 - 175 MRF141 MOSFET 28 150 16 40 CW 2 - 175 MRF173 MOSFET 28 80 11 55 CW 2 - 175 MRF173CQ MOSFET 28 80 11 55 CW 2 - 175 MRF151G MOSFET 50 300 14 50
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Bipolar-RF-Power-Transistors.pdf
2SC4137 4W 400dB V MHz KTC1006 1W 100dB V MHz KTC1969 16W 12dB 12V 100MHz KTC2078 4W 11dB 12V 100MHz MRF150 150W dB 50V 2-175 MHz MRF150-MP 150W dB 50V 2-175 MHz MRF154 600W dB 50V 2-80MHz MRF161 5W 13.5dB 12.5V 225-500MHz MRF162 15W 13.5dB 12.5V 225-500MHz MRF163 25W 12dB 12.5V 225-500MHz MRF175GU 150W
in „S: Empfehlung für HF-Transistortyp ab ca. 12W“ · Markt ·
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MotorolaDatenCD_2000.pdf
Typ)/Freq. Typical JC Device Watts Watts dB/MHz % °C/W Package/Style VDD = 28 Volts, Class AB MRF134 5 0.2 14/150 55 10 211–07/2 MRF136 15 0.38 16/150 60 3.2 211–07/2 MRF136Y 30 1.2 14/150 54 1.8 319B/1 MRF137 30 0.75 16/150 60 1.8 211–07/2 MRF171A ★ 45 0.56 20/150 65 1.52 211–07/2 MRF173 80 4 13/150 65 0.8 211–11/2 MRF174 125 8.3 11.8/150 60 0.65 211–11/2 MRF141 150 15 10/175 55 0.6 211–11/2 MRF141G 300 15 13/175 55 0.35 375/2 V = 50 Volts, Class AB DD MRF151 150 7.5 13/175 45 0.6 211–11/2 MRF151G
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MRF175GV.pdf
14 dB Typ Efficiency — 65% Typ MRF175GU @ 28 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 12 dB Typ Efficiency — 55% Typ D 100% Ruggedness Tested At Rated Output Power Low Thermal Resistance G Low C — 20 pF Typ @ V =
in „Dimensionierung eines Kühlkörpers für HF-Modul“ · HF, Funk und Felder ·
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MRF150.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to150 MHz frequency range. Specified 50 Volts,
in „Wärmeleitpad gesucht für POWER FET MRF150“ · Analoge Elektronik und Schaltungstechnik ·
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an762.pdf
be accomplished with information P = 148 W, and in the device data sheet and formulas presented in 150 – 40 references 5 and 6. As an example, with the 180 W unit using RθJA= (148/2)= 1.49⋅C/W (for one device). MRF421’s, the Junction-to-Ambient Temperature (θJA) is The Heat Sink-to-Ambient Thermal Resistance
in „Stackpole Ferrit Kerne für RF Verstärker“ · HF, Funk und Felder ·
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MRF272L.pdf
48 0.853 –178 130 0.920 –179 2.05 68 0.014 52 0.879 –178 140 0.921 –179 1.90 66 0.014 52 0.894 –178 150 0.922 –180 1.79 64 0.015 51 0.898 –178 MOTOROLA WIRELESS SEMICONDUCTOR MRF275L SOLUTIONS – RF AND IF DEVICE DATA 5.2–281 Table 3. Common Source S–Parameters (V DS = 28 V, D = 4.5 A) continued f S 11
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70599B.pdf
1-2: MICROCONTROLLER TO MRF24J40MB INTERFACE PIC ®MCU MRF24J40MB I/O CS SDO SDI SDI SDO V IN SCK SCK GND INTx INT I/O WAKE I/O RESET DS70599B-page 4 Preliminary 2009 Microchip Technology Inc. MRF24J40MB 1.2 Mounting Details
in „AVR32UC3B mit Funkmodul MRF24J40MB“ · Mikrocontroller und Digitale Elektronik ·
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70622B.pdf
FILTER Butterworth Filter BW, FSK Actual Theoretical BW BW 450 400 350 ] z [300 ) -250 u C d200 ( C F150 100 50 0 0 2 4 6 8 10 12 14 16 Val BUTFILV<3:0> [d] © 2010 Microchip Technology Inc. Preliminary DS70622B-page 67 MRF89XA 3.4.6 CHANNEL FILTERS SETTING IN 3.4.7 RECEIVED SIGNAL STRENGTH OOK MODE (RSSI
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70622B.pdf
FILTER Butterworth Filter BW, FSK Actual Theoretical BW BW 450 400 350 ] z [300 ) -250 u C d200 ( C F150 100 50 0 0 2 4 6 8 10 12 14 16 Val BUTFILV<3:0> [d] © 2010 Microchip Technology Inc. Preliminary DS70622B-page 67 MRF89XA 3.4.6 CHANNEL FILTERS SETTING IN 3.4.7 RECEIVED SIGNAL STRENGTH OOK MODE (RSSI
in „Wie genau funktioniert die drahtlose Kommunikation?“ · HF, Funk und Felder ·
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AN758.pdf
more than 0.25 dB from each other, with a provision made for an Although the transistors employed (MRF427 and input Pi attenuator to accommodate device pairs with larger MRF428) are 100% tested against 30:1 load mismatches, gain spreads. The attenuators are not used in this device in case of a slight
in „Stackpole Ferrit Kerne für RF Verstärker“ · HF, Funk und Felder ·
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_Motorola_AN758.pdf
more than 0.25 dB from each other, with a provision made for an Although the transistors employed (MRF427 and input Pi attenuator to accommodate device pairs with larger MRF428) are 100% tested against 30:1 load mismatches, gain spreads. The attenuators are not used in this device in case of a slight
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samsung_bn44-00264c.pdf
8 C 8 0 M 8 1 3 V LP801 BP802 BAS3550TO R 7 RP832 OVP u EER3120 RP802 F F 180uH DP802 SURF1060 1.5MRF 2012 0 4 ~ - 1 8 3324110023ND C ! ! 1 7 R 0RJ 3 4 RP804 P 4 M P QP803 1 7 F 2 RP835 MCR100-6RLRMG ! 9 5 5 M P 2 7 T V P V P F 0 1 600V,6A 68RF 3216 P 1 K P 8 8 + 8 8 + RP806 2 3 2 ! RP805 DP803 8 1 V 8 u 2 u 3 1.5MRF 2012 1 1KRF 1 M 2 ! 5 ( ( 2 . B D 6 0 W W 4 M R V 0 D 33RF 3216 BAV70(SOT-23) N F S 1 ) ) M R R 8 D 0 1 R u C R 3 2 R R Q F V RP809 R 8 F 6 8 S 0 8 F 8 LX802S P 0 K P RP808 ) P 1 2 1.5MRF 2012 F 1 0
in „Samsung LE40B579 einschalten nicht möglich“ · Mikrocontroller und Digitale Elektronik ·
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samsung_bn44-00264c.pdf
8 C 8 0 M 8 1 3 V LP801 BP802 BAS3550TO R 7 RP832 OVP u EER3120 RP802 F F 180uH DP802 SURF1060 1.5MRF 2012 0 4 ~ - 1 8 3324110023ND C ! ! 1 7 R 0RJ 3 4 RP804 P 4 M P QP803 1 7 F 2 RP835 MCR100-6RLRMG ! 9 5 5 M P 2 7 T V P V P F 0 1 600V,6A 68RF 3216 P 1 K P 8 8 + 8 8 + RP806 2 3 2 ! RP805 DP803 8 1 V 8 u 2 u 3 1.5MRF 2012 1 1KRF 1 M 2 ! 5 ( ( 2 . B D 6 0 W W 4 M R V 0 D 33RF 3216 BAV70(SOT-23) N F S 1 ) ) M R R 8 D 0 1 R u C R 3 2 R R Q F V RP809 R 8 F 6 8 S 0 8 F 8 LX802S P 0 K P RP808 ) P 1 2 1.5MRF 2012 F 1 0
in „Samsung Schaltnetzteil Defekt“ · Analoge Elektronik und Schaltungstechnik ·
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Vergleichsliste.pdf
SVT6759 ECG328 2N5038 ECG329 MRF8004 2SC775 ECG330 T B A ECG331 BD911 2N6488 MJE3055T ECG332 2N6491 BD912 MJE2955T ECG333 MRF455 2SC2290 ECG334 MRF455A ECG335 MRF454 ECG336 MRF454A ECG337 2N5847 SD1167 7 of 46 ECG338 2N5848 SD1168
in „ECG45 was ist das?“ · Analoge Elektronik und Schaltungstechnik ·
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EB_104.pdf
of the power gain of a MOSFET is largely dependent on the power splitters and combiners. Motorola MRF150 RF power drain bias current, only m matching is required, and it can relatively high power levels. This technique is considered be only 〉 10%. N impractical for bipolar transistors due to their low
in „Stackpole Ferrit Kerne für RF Verstärker“ · HF, Funk und Felder ·
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SMD_Catalog.pdf
6GHz MRF911 7R MMBR536 Mot N - npn RF MRF536 7T BCW68FR Zet R SOT23R pnp 45V 0.8A 7V5 PZM7.5NB Phi C SOT346 7.5V 0.3W zener 7X MMBR571L Mot N SOT23 npn RF fT 8GHz MRF571 7Y MMBR941L Mot N SOT23 npn RF fT 8GHz
in „Hilfe bei Bauteilsuche für Mainboard“ · PC Hard- und Software ·
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RF-circuit.pdf
D102 C121 7P C137 82P KDS114 100P C125 C135 C136 103 12P L105 C127 103 4.7U/10V 6.8NH_1008 C129 C128 MRF9242 NC 11P C3356 (FS) R110 2SC3356 TXVCOOUT NC Q101 NC Q102 Q104 C134 2P C102 C104 C106 C108 C140 NC 6P 7P 3P NC LPF21NH(0.35-1.6-4TL) L212 R221 X204 C244 C245 L201 100K 104 RX3.6V CDBC450CX24 4.7U/
in „Software <> Funkgerät, Kommunikation“ · HF, Funk und Felder ·
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AN593.pdf
ferrite toroids or equivalent.) R3 — 820 , 1 W wire W PARTS LIST R4 — 35 , 5 W wire W R5, R6 — Two 150 , 1/2 W carbon in parallel L1 — .33 H, molded choke Q1 — 2N6370 R7, R8 — 10 , 1/2 W carbon L2, L6, L7 — 10 H, molded choke Q2, Q3 — 2N5942 R9, R11 — 1 k, 1/2 W carbon L3 — 1.8 H, (Ohmite 2-144) Q4 —
in „Stackpole Ferrit Kerne für RF Verstärker“ · HF, Funk und Felder ·
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AN593_BroadbandAmp.pdf
ferrite toroids or equivalent.) R3 — 820 , 1 W wire W PARTS LIST R4 — 35 , 5 W wire W R5, R6 — Two 150 , 1/2 W carbon in parallel L1 — .33 H, molded choke Q1 — 2N6370 R7, R8 — 10 , 1/2 W carbon L2, L6, L7 — 10 H, molded choke Q2, Q3 — 2N5942 R9, R11 — 1 k, 1/2 W carbon L3 — 1.8 H, (Ohmite 2-144) Q4 —
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noisecan.pdf
unattended operation, and usually achieve the shot-noise limit. With 1-Hz signal-to-noise ratios of 150–160 dB, they allow performance equal or superior to a complex heterodyne system in many cases, while using much simpler dual-beam or homodyne approaches. Although these devices are related to earlier
in „OPA890 vs. OPA847 als Tranzimpedanzverstärker“ · Analoge Elektronik und Schaltungstechnik ·
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Transistor_Database.pdf
+D 150V 25A 100W 2SD1302 SI-N 25V 0.5A 0.6W 200MHz 2SD1306 SI-N 30V 0.7A 150mW 250MHz 2SD1308 N-DARL+D 150V 8A 40W 2SD1313 SI-N 800V 25A 200W 6MHz 2SD1314 N-DARL+D 600V 15A 150W 2SD1330 SI-N 25V 0.5A 0.6W
in „Bauteilebeschaffung !!“ · Mikrocontroller und Digitale Elektronik ·
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Transistor_Database.pdf
+D 150V 25A 100W 2SD1302 SI-N 25V 0.5A 0.6W 200MHz 2SD1306 SI-N 30V 0.7A 150mW 250MHz 2SD1308 N-DARL+D 150V 8A 40W 2SD1313 SI-N 800V 25A 200W 6MHz 2SD1314 N-DARL+D 600V 15A 150W 2SD1330 SI-N 25V 0.5A 0.6W
in „Transistor-Datenbank“ · Analoge Elektronik und Schaltungstechnik ·
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PSpice_LibraryguideOrCAD.pdf
TransistCM150DY-24H CM150DY-24H IGBT.OLB Powerex Insulated Gate Bipolar TransistCM150E3Y-12E CM150E3Y-12E IGBT.OLB Powerex Insulated Gate Bipolar TransistCM150E3Y-24E CM150E3Y-24E IGBT.OLB Powerex Insulated Gate
in „pSpice - Bauteil hinzufügen.“ · Analoge Elektronik und Schaltungstechnik ·
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catalog.pdf
1/10W ±100ppm/°C Molded SMD Paper T/R MPN: CRCW0402150KFKED [ID]: 000457 [Price]: 0.01 USD [QTY]: 150 [Category]: Chip SMD Resistors [Desc]: Res Thick Film 0402 150K Ohm 1% 1/16W ±100ppm/°C Molded SMD SMD Paper T/R MPN: RC0603FR-07100KL [ID]: 000468 [Price]: undef/offer [QTY]: 3000 [Category]: Chip
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catalog.pdf
MPN: CRCW0402150KFKED [ID]: 000457 [Price]: 0.01 USD Page 22/105 Bauteileliste vom 12.08.2022 [QTY]: 150 [Category]: Chip SMD Resistors [Desc]: Res Thick Film 0402 150K Ohm 1% 1/16W ±100ppm/°C Molded SMD SMD Paper T/R MPN: RC0603FR-07100KL [ID]: 000468 [Price]: undef/offer [QTY]: 3000 [Category]: Chip
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catalog-3.pdf
CRCW0402150KFKED [ID]: 000457 [Price]: 0.0138 USD Page 22/105 Bauteileliste vom 12.08.2022 [QTY]: 150 [Category]: Chip SMD Resistors [Desc]: Res Thick Film 0402 150K Ohm 1% 1/16W ±100ppm/°C Molded SMD SMD Paper T/R MPN: RC0603FR-07100KL [ID]: 000468 [Price]: undef/offer [QTY]: 3000 [Category]: Chip
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an75f_Low_Power-Design.pdf
2 LT1720 2k – 820Ω Q3 9 6 Q4 820Ω CSTRAY LM3045 : IN5711 10 13 7 51Ω 51Ω : 1N4148 AN75 F19 Q1, Q2: MRF501 (GROUND CASE LEAD) Q3, Q4: LM3045 (ARRAY NUMBERS INDICATE PINNING) –5V DIODE BRIDGE: CA3039 (ARRAY NUMBERS INDICATE PINNING) Figure 19. 15ns WaveformSampler Utilizes Diode Bridge Switch and Wideband
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TEKTRONIX_Component_Service_Manual_TDS_520B_Mod_CM_Digitizing_Oscilloscope_070-9710-03.pdf
&R A11U84 156–5054–01 IC,DIGITAL:FTTL,GATE,QUAD 2–INPUT 01295 SN74F32DR OR,74F32,SO14.150,16MMT&R A11U100 156–5054–01 IC,DIGITAL:FTTL,GATE,QUAD 2–INPUT 01295 SN74F32DR OR,74F32,SO14.150,16MMT&R A11U101 156–5053–01 IC,DIGITAL:FTTL,GATE,QUAD 2–INPUT 01295 SN74F08DR AND,74F08,SO14.150,16MMT
in „Tektronix TDS744A Netzteil“ · Analoge Elektronik und Schaltungstechnik ·
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Switch.pdf
SS-5FT F Kontaktstößel 50gf QC #110 Quick-ConnectTerminals (#110) 653-SS-5D SS-5D G Kontaktstößel 150gf PCB gerade G 19.8 653-SS-5D2 SS-5D2 I Kontaktstößel 150gf PCB rechtwinklig 653-SS-5 SS-5 H Kontaktstößel 150gf Lötanschluss 653-SS-5T SS-5T F Kontaktstößel 150gf QC #110 2.9 653-SS-5GL-F SS-5GL-F
in „Ausfallursache Printtaster DeLonghi Kaffeeautomat?“ · Mikrocontroller und Digitale Elektronik ·
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Diskreter_Leistungverst_rker_mit_OPVs__-_AN47.pdf
make. Ideally, the Dramaticdifferencesindisplayedresultsareproducedby oscilloscopeshouldhaveatleast150MHzbandwidth,but probe-oscilloscopecombinationsofvaryingbandw5dths. Note4:Inparticular,themarinechronometerreceivedferociousandabundantshowstheoutputofaveryfastpulse monitored amounts of attention. See
in „Projekt: DDS basierter Funktionsgenerator mit AD5930“ · Mikrocontroller und Digitale Elektronik ·
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Exp_Meth_In_RF_Des--Wes_Hayward.pdf
Smith Chart plot shows of 7.7 iiH. The L is larger than we would capacitive reactance of about 2 Q at 150 us that the impedance is nearly 50 Q at 63 MHz. The actual 150-MHz value is induc- MHz. Impedance would be even higher see with shorter leads. A 0.25-inch 470-pF ceramic disk capacitor with zero lead
in „Literatur zum Selbstbau von Sendern und Empfängern“ · HF, Funk und Felder ·
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Datei
Sensors.shtml.htm
> <a href="http://www.analog.com/iMEMS/">Analog Devices</a> - Made for automotive air bag, New ADXL150 & ADXL250 lower noise versions of the popular older ones. They have a large number of app notes on their web site covering all kinds of practical areas of concern like temperature dependency
in „CO Gehalt Messen“ · Mikrocontroller und Digitale Elektronik ·