Alternative zu MOSFET Typ: 50N024

[Christian T. (Gast)]

Hallo,

da ich mich mit MOSFETs nicht so recht auskenne, frage ich mal die 
Experten unter euch, welcher Typ als alternative zu einem 50N024 Typ
einzusetzen währe, den auch Reichelt oder Conrad usw.. im Sortiment hat.

Das Teil gehört in den Leistungsteil der Steuerelektronik eines 
RC-Helikopters für den Hauptrotor..

Hier noch ein Auszug von Datasheet4u:

SUD50N024-06P
New Product

Vishay Siliconix

N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C

FEATURES
ID (A)d
80 64

rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V

D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized 
for High Efficiency

APPLICATIONS
D Synchronous Buck DC/DC Conversion - Desktop - Server

D

TO-252

G Drain Connected to Tab G D S

Top View Order Number: SUD50N024-06P S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage 
Continuous Drain Currenta Pulsed Drain Current Continuous Source Current 
(Diode Conduction)a Avalanche Current, Single Pulse Avalanche Energy, 
Single Pulse TA = 25_C Maximum Power Dissipation Operating Junction and 
Storage Temperature Range TC = 25_C PD TJ, Tstg L = 0.1 mH TC = 25_C TC= 
100_C ID IDM IS IAS EAS

Symbol
VDS(pulse) VDS VGS

Limit
24C 22 "20 80d 56d 100 26 45 101 6.8a 65 - 55 to 175

Unit

V

A

mJ W _C

THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambienta Junction-to-Ambient Maximum 
Junction-to-Case t v 10 sec Steady State RthJA RthJC

Symbol

Typical
18 40 1.9

Maximum
22 50 2.3

Unit

_C/W C/W

Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package 
c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation 
based on maximum allowable Junction Temperature. Package limitation 
current is 50 A. Document Number: 72289 S-31398—Rev. A, 30-Jun-03 
www.vishay.com

1

www.DataSheet4U.com

SUD50N024-06P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage 
Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On 
State Drain-Source On-State Resistanceb Forward Transconductanceb 
V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS 
= VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 
V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS 
= 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 
A 15 0.0073 50 0.0046 0.006 0.0084 0.0095 S W 22 0.8 3.0 "100 1 50 V nA 
mA A

Symbol

Test Condition

Min

Typa

Max

Unit

Dynamica
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate 
Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec 
Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss 
Crss RG Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 
A, VGEN = 10 V, RG = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, 
VDS = 10 V, f = 1 MHz 2550 900 415 1.5 19 7.5 6.0 11 10 24 9 20 15 35 15 
ns 30 nC W p pF

Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time 
ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 
1.5 70 A V ns

Notes a. Guaranteed by design, no




Danke!!

MfG

Christisn

[Christian T. (Gast)]

hat keiner ne Idee???

[Herbert_78 (Gast)]

Servus Christian,

Habe mir grade dein Beitrag durchgelesen, hatte bei einem Kunden ein 
änlichen Fall. Ich würde dir den Asmann LB3349 weiterempfehlen. Ich 
denke damit ist dein Problem gelöst. Ob er auf Conrad oder Reichelt zu 
bestellen ist kann ich dir leider nicht sagen.

Gruß Herbert