Oliver S. schrieb im Beitrag #8035449: > Nach DIN 18014 darf der (Fundament-) Erder nur durch eine > Elektrofachkraft ERSTELLT werden. Das ist eine Norm, nein Gesetz.
Udo S. schrieb im Beitrag #8036903: > Thomas schrieb im Beitrag #8036897: >> Ein üblicher "B" LS schaltet innerhalb von ca. 0,01 - 0,1s ab. Das setzt >> aber einen entsprechenden Kurzschlußstrom voraus
Raum zu reisen! https://youtu.be/tKpsrhLv-jw?si=dEtU5_bL59rDJGhS
bereits knapp: https://de.wikipedia.org/wiki/Turing-Test#Durchgef%C3%BChrte_Turingtests_und_%C3%A4hnliche_Tests "Im März 2025 wurden in einer Studie vier Systeme (ELIZA, GPT-4o, LLaMa-3.1-405B und GPT-4.5) in zwei randomisierten, kontrollierten und vorab registrierten Turing-Tests mit unabhängigen
auf genau 50%, und kann mit Handy/Tablet via WebIF eingestellt werden. Bei 50% fließen bei 28,5V ca. 40 mA bei etwa 1,1 Watt Verbrauch in die 2x 10 Stck LED-Leisten. Das ist selbst dann schon ein vielfaches heller als die Röhren, und der Stromverbrauch ist wesentlich niedriger, und die LEDs sind aber kalt
3.88 inch display for easier maps, messaging, and app navigation • Quad core hardware with 4 GB RAM and 64 GB storage running Android 12 • Worldwide 4G support where available for on grid use • Optional prepaid 2 GB data SIM for hybrid operation with no contracts • Power efficient
[code] It's important for the project as whole to be able to move forward and rely on modern tools and technologies and not be held back by trying to shoehorn modern software on retro computing devices. [/code
= 50 A iss e 8 VDS= 30 V F 10 000 a ( 1000 o 1000 e C oss V n n e e e e 6 e l i l l l u l na 1000 s n d o s 2pa 1 2 2 - 4 1 C - - 100 t 100 C 100 C rss G - 2 G V 10 10 0 10 0 10 20 30 40 50 60 0 40 80 120 160 200 VDS - Drain-to-Source Voltage (V) Qg- Total Gate Charge (nC) Capacitance Gate Charge S21
rise more quickly, producing a narrower (h) 5.2 Luminance and earlier burst pulse (starting approx. 0.4 s after sync and Output about 0.6 s wide). The burst will be wider and later if the (Pin6) resistor is raised to 62 k , but more importantly, the 5.0 V 4.3 reset point may not be reached in one full
7 10 A 8 16 A ) * /61 cURus Zulassung 2 OA 5671, 72, 81, 82 / 06.06.24 de / 882A Kennlinien 2,2 _ 4 1,0 b 2,0 M 0,9 5 UB max. 0,8 M 1,8 ohn Last 0,7 1,6 0,6 UB max. 1,4 bei I max. o 0,5 k s 0,4 U B 1,2 t UN u 1,0 e 0,3 R 0,8 0,6 0,2 0 20 40 60 80 100°C 0,2 0,4 0,6 0,8 1 Umgebungstemperatur Leistungsfaktor
Vj b b i t> > O 3 .U .O (0 >*-J -i •-) uW E M0 ) _ d C d 4 - i H 4 - 4 J S - i 3 i j jr IQ W B CQ u 3 d) c: e a x „ 1 d -U o) 4-i 4-1t») J3 .0 .0 .0 OJ ^ DUCd ) O D 0) d U U d) -C ,X C -C J3S C d O r ß H U 05.-H U dl S o J d J S t I 5 o f l 5 ^ H H O •0 Q d
This chip integrates a 128 MHz arm-cortex M33 processor, an RISC-V coprocessor, and a power-saving 2.4 GHz multiprotocol radio chip. The Bluetooth LE 6.0, Matter, Thread, Zigbee, NFC, and IEEE 802.15.4 radio protocols can be used, as can also proprietary 2.4 GHz protocols. . . . [/c] ### Phoenix
> Microchip maXTouch - Zwei-Seiten-Touchscreen > Am Stand von Microchip zeigte man einen Touchscreen, der dank geschickter > Polarisierung je nach Einfallswinkel des Betrachters unterschiedliche Inhalte > präsentierte
BLOCK DIAGRAM R L U Vo o U 7 Vi µ V µ i 0 2 2 V E 0 0 M 0 1 1 F 1 F 2 5 2 . 2 1 . 0 R k + A + 7 R 0 4 D 4 k - T 5 k 4 F 1 6 9 4 3 . - i 1 6 k F u F E r 8 A NC n c 6 4 G AH 4 n e t 1 O u s S T 8 m t n O E s . 4 4 E E N E a 6 7 7 L M D 0 f d k U R 4 p o e 0 ) P F O u t C 1 1 L EH 7 V o e C O Tk s e H 2 F3 a l ( 2 k , v k E + t l 0 NR 6 n I C 1 1 O EO 0 n m N E N EC 4 p 1n o f S E L FT 5 ht di wegapll uf , koobdpah k k S B EE m 2 2 7 TD C T 1 F o 1 I N N 0 µ l z R R 4 0 µ a N H E R 1 r o E 8 H 8 E C e r a I 1 T 3 I R x t i I O e s i V S L k h o E R 0 i 1 T E G Z 1
tGLQX Output enable low to output transition 5 5 5 ns tEHQZ Chip enable high to output Hi-Z 25 35 40 ns tGHQZ Output enable high to output Hi-Z 25 35 40 ns tAXQX Address transition to output transition 10 5 5 ns 1. Valid for ambient operating tempeAature: T = 0 to 70 °C orCC= 4.75 to 5.5 V or 4.5 to
kn to 7 kn Vee+= 13.2 v, Data input 1 10 l1H High-level input current 3 V e e -= -13.2 v, µA V1=2.4V Strobe input 2 20 Vee+= 13.2 v. Data input -1 -1.6 l1L Low-level input current 3 V e e -= -13.2 v, mA Strobe input - 2 -3.2 V1=0.4 V V o = 25 V 2 Short-circuit output current V cc+=13.2v. V o = -2 5 V - 3 las 4 V e e -= -13.2 v V o = O V , V 1 = 3 V 15 mA V o = O V ,V 1 = 0 V -1 5 Vee+= 13.2 v, V e e -= -13.2 v. iccH+ Supply current from Vee+. high-level output 10 22 mA 5 V1 =O V, RL = 3 kH, ic c H -Supply
27 EZ-USB™ HX2VL low-power multipletransaction translator USB 2.0 hub controller Pin configurations 4 Pin configurations I A X G M D R P S B _ P E 2 W O P O E P R P I N S C # V W V V L V I [ O S [ E _ [ # # # G C P E C C ] R K ] L D ] [ [ [ N _ W G C S / 1 / / 7 A / ] ] ] G D R 4 4 4 4 4 4 4 4 4 3 3
temperature PARAMETER TEST CONDITIONS MIN TVP MAX UNIT Iv Luminous Intensity (See Note 2) V ee= 5 v. IF= 10 mA 40 110 µcd hp Wavelength at Peak Emission 640 655 670 nm ~;\ V ee= 5 v, V L E o= 4V Spectral Bandwidth 20 nm V1H High-Level Input Voltage 2 v V1L Low-Level Input Voltage 0.8 v V1K Input Clamp Voltage V ee= 4.5 v, 11 = -1 2 mA -1 .5 v l1H High-Level Input Current V ee= 5.5 v, V1=2.4 V 150 µA l1L Low-Level Input Current V ee= 5.5 v, V1=0.4 V -1 mA Irow Row Input Current l Row 1 thru Row 6 500 800 J Row7 See
n e 2 4 F F u a 6 0 7 0 W o C 1 C 1 5 r 4 I . a D D d , l T % o 1 1 5 P T 0 R T e r 7 R 1 a s k 3 0 3 1 3 1 2 s o 9 0 D N D N D N C o c R 3 1 1 1 Q M i a 4 4 e a D 4 D 4 F r c 8 k 1 1 μ a a R 1 5 . * * C 0 s
Supply Figure 25. FB Threshold Voltage vs Temperature Voltage 8 8 Ω H ] O7 [7 : N e R n6 :6 s VCC=3.5V c s5 t5 R i N e O4 R4 VCC=3.5V i O S e i3 i3 H w u o t2 VCC=12V t2 O t u1 1 O VCC=12V 0 0 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 Temperature [˚C] Temperature [˚C] Figure
2.0 F ( 160 h 500 C I 1.0 率 300 Ta = 100°C 幅 流 120 増 25 電 タ 流 100 ク 80 0.5 電 −25 流 50 レ 直 コ IB= 0.2 mA 30 40 0 0 10 0 1 2 3 4 5 6 7 8 0.1 0.3 1 3 10 30 100 300 コレクタ･エミッタ間電圧 VCE (V) コレクタ電流 IC (mA) V – I V – I CE (sat) C BE (sat) C 3 30 エミッタ接地 エミッタ接地 圧 I /I = 10 I /I = 10 C B C B 電 1 圧 10 Ta = 25°C 和 電
Lock Y-axis 10ms 100ms 1s 3s 10s 1min LIVE VIEW 40 mA 30 mA 20 mA 10 mA 0 nA 00:00:01 00:00:05 00:00:10 00:00:15 00:00:20 00:00:23 090.478 000.000 000.000 000.000 015.655 WINDOW SELECTION ZOOM TO SELECTION SELECT ALL CLEAR 6.74mA average 33.99mA max 21.92s time 147.67mC charge 371.81µA average 12.13mA max 4.888s time 1.82mC charge
.......65 6 / 67 W5500 Datasheet Version1.1.0 Pin Assignment E E E D D D D D D D D D n G C C M M M S S S S S S A N N P P P R R R R R R 4 4 4 4 4 4 4 4 4 3 3 3 TXN 1 36 INTn TXP 2 35 MOSI AGND 3 34 MISO AVDD 4 33 SCLK RXN 5 32 SCSn RXP 6 31 XO W5500 DNC 7 30 XI/CLKIN AVDD 8 48LQFP 29 GND AGND 9 28 VDD
工作温度 Topr –40～85 ℃ working temperature 存储温度 Tstg 5～30 ℃ Storage temperature 焊接温度 Tsld 回流焊 260℃不超过 30s ℃ welding temperature Reflow soldering 260 ℃ not more than 30s 手动焊接 300℃不超过 3s Manual welding at 300 ℃ for no more
1. — .~4^.r-r.:.'.,hrn •’ S'rr r* k ; L I I i t * «o 11 11 n T u m » T u s^t» _____ |C] 1 0 1 0 1( 3 .4 7 M H N R Z " * 1 s*— s iiu i« " nV id O U C U .C N -U MSC H A LTER - 1 --------------- 1---------1-----
g u 0 n l t r p t n t t t t e k 1 2 a / N T A i a a a a a e i i n e z S S S S S e B B A P B B 1 2 Bauteil 74xxxx 74HC374ADW SMD 8BitFlipFlop 24 0,30€ 3 Bauteil 74xxxx 74HCT161 SMD Counter 30 0,70€ 4 Bauteil 74xxxx 74150 Multiplexer,Decoder 21 3,00 € 5 Bauteil 74xxxx 74168
Qrlg.lSlze Unterlagennummer/ Reference IoA/Ed. Benennung/Nomencloture Ilem Cop + - "'eid fur Kurz.-And 1 4 4 322-49.0001.0089 BI. : 1 A5 In h a lts v e rz e ic h n is . 2 3 4 010-40.1004.0208 BI. : 1 A2 Maßzeichnung 3 4 4 309-48.3101.0310 B l.:1 -4 A2 K urzbeschreibung 4 4 4 300-40.1004.5006 BI. : 1 Al S
OCP), Short Load Protection (SLP), and VDD Clamping. ● Battery Chargers for Cellular Phones Company’s Logo is Protected, “JW” and “JOULWATT”●are AC/DC Power Adapter Trademarks of JoulWatt technology Inc. TYPICAL APPLICATION JW1501A/B Rev.0.4 JoulWatt Proprietary Information. Patent Protected. 1 Unauthorized
557 Philips Semiconductors Linear Products Product specification CMOS 8-bit A/D converters ADC0803/4-1 AC ELECTRICAL CHARACTERISTICS ADC0803/4 SYMBOL PARAMETER TO FROM TEST CONDITIONS UNIT Min Typ Max Conversion time fCLK =1MHz 1 66 73 s 1 fCLK Clock frequency 0.1 1.0 3.0 MHz Clock duty cycle 1 40 60
6 4 2 0 AVDD_33V AVDD_18V - + - + - + - + DVDD_18DVVDD_33V RJ45_LINK R12 512 3 3 2 2 2 2 2 1 1 1 1 1 8 6 4 2 VREF U3A 74HC04 C29 C18 W X M X D 0.1uF SPD0_LED 1 2 R E _ D I S 2 C 2 O U3B 0.1uF # K U5 4 4 4 4 4 4 4 4 4 3 3 3 3 3 3 3 C20 G S 3 0 0 D 0 0 1 3 1 1 D 1 1 1 LNK0_LED 3 4 E R D X X N X X D D X X N X X D JP5 R G D R R A T T D D R R A T T D VCNTL 49 G B A A A A 32 74HC04 0.1uF FX_SD 1 VREF 50 VCNTL
Collector Current 20 mA Transistor Power Dissipation 75 mW IR Diode Peak Forward Current (Pulse Wide = 10S, 300 pps) 1 A Diode Power Dissipation 100 mW Phototransistor Collector-Emitter Voltage 30 V Phototransistor Emitter-Collector
voltage 9 V TSTG Storage temperature -65 to +150 ⋅C T Operating ambient temperature range SA612A -40 to +85 ⋅C A AC/DC ELECTRICAL CHARACTERISTICS TA=25⋅C, VCC = 6V, Figure 3 LIMITS SYMBOL PARAMETER TEST CONDITION UNIT Min Typ Max VCC Power supply voltage range 4.5 8.0 V DC current drain 2.4 3.0 mA fIN
LOW at IOL= 0,8 mA VOL a - 0,4 V Output voltage HIGH at -IO H= 0,2 mA VOH 2,4 - VDO V pF Load capacitance CL - - 50 XSYS (note 8) - 0,4 V Output voltage LOW VOL a Output voltage HIGH VOH 2,4 - VDD V Load capacitance CL
www.ti.com 6.6 Typical Characteristics At T = 25°C, unless otherwise noted. A 250 1.8 1.6 200 ) V ) 1.4 ( ( g150 i 1.2 l L V t B e 1 -100 u F C V 0.8 50 0.6 0 0.4 0 10 20 30 40 50 60 70 80 90 100 -60 -40 -20 0 20 40 60 80 100 120 Dimming Duty Cycle (%) Temperature (°C) D001 D002 Figure 6-1. FB Voltage
. NO. REV. CHARLOTTESVILLE, VA. USA 31785 OCXO 134-10 2 3 114-501 B OCXO 134-10 4. REFERENCE VOLTAGE 4.1. Voltage +8 VDC ±5% 4.2. Current < 1 mA 4.3. Stability a. Ambient < ±10 mV (Over temperature range in 2.1.) b. Input voltage < ±1 mV/2% 5. INPUT POWER 5.1. Voltage +13 VDC ±2 VDC
Single-Mode Single-Mode (40 km) (80 km) 50/125 µm Fiber Cable Type OM1 G.652 G.652 800 MHz x km Typical Distance 4 km 5 km 40 km 80 km Typical (nm) 1300 1310 1550 TX Range 1260 to 1360 1280 to 1340 1530 to 1570 Wavelength (nm)
c1 8,60 c22,60 d 4,80 e11,20 2,40 S 4,8 IEC a b b 1 b 2 c c1 c2 d e f S Order-No. Type 10.040053 EK 16 20 YEE 2 - 5 dK dK 16,00 16,00 11,04,0 5,00,0011,2000 8,60,002,60,00 4,800011,20 2,40,00 4,8,0 10.045 EK 20 L YEE 2
0 VDC −3 µADC Leakage (All Data Buffers) V = 5 V 3 µA OUT DC DC SOURCE V OUT Short to Gnd, A= 25˚C 4.5 6 mA DC SINK V OUT Short to CC, TA=25˚C 9.0 16 mA DC POWER SUPPLY CC Supply Current (Includes fCLK= 640 kHz, Ladder Current) V REF/2 NC, T A=25˚C = and CS 5V ADC0801/02/03/04LCJ/05 1.1 1.8 mA ADC0804LCN
Distortion Voltage TemperatureOptical Fiber Cableppropriate Optical Fiber Cable Module Module (Mb/s, NRZ) (nm) (m) (1) (ns)(1) (V) (°C) (µm) with Fiber-Optic Connectors TOTX196 TORX196 Up to 1000 PCF (200/300) TOCP100Q - BTOCP100X - B DC to 6 800 ±55 5± 0.25 – 40 to 85 - (4) Up to 800 H PCF(200/230
channel 31.2 W Junction temperature Tj IGBT, FRD junction temperature 150 °C Storage temperature Tstg -40 to +125 °C Operating temperature Tc H-IC case temperature -20 to +100 °C Tightening torque MT A screw part *3 1.0 N•m Withstand voltage Vis 50Hz sine wave AC 1 minute *4 2000 VRMS In the case without
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