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Sechs Dallas DS12C887 Echtzeituhren
DALLAS DS12C887 REAL TIME 0838D 365159 PHILIPPINES DALLAS DS12C887 REAL TIME 0347A2 338468 PHILIPPINES DALLAS DS12C887 REAL TIME 0252A2 334131 PHILIPPINES DALLAS DS12C887 REAL TIME 0041A2 300407 PHILIPPINES DALLAS DS12C887 REAL TIME 0103A2 301145 PHILIPPINES DALLAS DS12C887 REAL TIME 0425A2 341638 PHILIPPINES
in „[V] Dallas DS12C887, RTC“ · Markt · · Fotos
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DM8603EP.pdf
PSE,RW 0b AGE_DIS 90h.[13] AddressTableAging A0h.[13] 0:Agefunctionisenabled 1:Agefunctionisdisabled 12 80h.[12] PSE,RW 0b ADR_DIS 90h.[12] Address Learning Disabled A0h.[12] 0: Address learning function is enabled 1: Address learning function is disabled Preliminarydatasheet 28 DM8603-12-DS-P01 November8,2010
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DS_DA221.pdf
ODR 01: 1/4 ODR 10: 1/10 ODR autosleep_en 0: working the current ODR state all the way 1: working at 12.5hz in inactive state, automatic switched to normal mode during active state 23/ 34 www.miramems.com Mar. 2023 Rev 0.1 DS_da221 7.12. SWAP_POLARITY (12H) Table 36.SWAP_POLARITY register Default data:
in „Seltsames Verhalten eines Beschleunigungssensors“ · Mikrocontroller und Digitale Elektronik ·
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LM317_Datenblatt.pdf
R1 Figure 10. 5 V electronic shut-down regulator Input Output Adjust DS0433 - Rev 22 page 11/34 LM217, LM317 Application information Figure 11. Digitally selected outputs Input Output Adjust (R2sets maximum V ) O Figure 12. Battery charger (12 V) Output Input Adjust * RSsets
in „12V Membranpumpe (KNF) läuft nur mit halber Leistung bei interner 3V-Steuerspannung (LM317)“ · Analoge Elektronik und Schaltungstechnik ·
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ADC0801_05.pdf
allow easy replacement, then A/D can be calibrated with a pre-set input voltage. www.national.com 12 A C Typical Applications (Continued) 0 0 1 Handling5V Analog Inputs Read-Only Interface A C 0 0 2 A D 0 8 3 A D 0 8 4 A D 0 8 DS005671-34 DS005671-33 *Beckman Instruments 694-3-R10K resistor array µP
in „Verständnisfrage zum ADC080x (VIN-MIN/DC-Offset)“ · Analoge Elektronik und Schaltungstechnik ·
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DS1220Y.pdf
ns Write Cycle Time t 100 ns WC Write Pulse Width tWP 75 ns 3 Address Setup Time tAW 0 ns tWR1 0 ns 12 Write Recovery Time t 10 ns 13 WR2 Output High-Z from WE ODW 35 ns 5 Output Active from WE OEW 5 ns 5 Data Setup Time t 40 ns 4 DS Data Hold Time tDH1 0 ns 12 tDH2 10 ns 13 4 of 9 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES 2, 3, 4, 6, 7, 8 AND 12 WRITE CYCLE 2 SEE NOTES 2, 3, 4, 6, 7, 8 AND 13 5 of 9 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y POWER-DOWN/POWER-UP CONDITION
in „[S] DALLAS DS1220Y-150 NVRAM (NOS)“ · Analoge Elektronik und Schaltungstechnik ·
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DM8203.pdf
Ifbit53H.7=1:TOS[7:2]=0DH 1:0 TOSC PE0,RW Ifbit53H.7=1:TOS[7:2]=0CH 24 Preliminary datasheet DM8203-15-DS-P05 October23,2008 DM8203 2-port switchwithMII/RMIIInterface C4H: Bit Name Default Description 7:6 TOS13 PE1,RW Ifbit53H.7=1:TOS[7:2]=13H 5:4 TOS12 PE1,RW Ifbit53H.7=1:TOS[7:2]=12H 3:2 TOS11 PE1,RW Ifbit53H
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TM56M152A-tenxtechnology.pdf
~ADC12 Internal channel Pin Change VBG,1/4VCC 8-bit Wake All Pins RISC core PWM0P PWM0N WKT PWM Timer0 WDT PWM1O~PWM5O LVR Timer1 Reset nRESET LVD VSS VCC TM56M152A Block Diagram DS-TM56M152A_E 11 Rev 0.96,
in „MCU identifikation/Datenblatt - MC9989A0ZQ“ · Mikrocontroller und Digitale Elektronik ·
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dm9161-ds-f05_091008.pdf
...........................20 Diagram.......................................................37 7.2.12 Power Down Mode......................................20 2 Final Version: DM9161-DS-F05 September 10, 2008 DM9161 10/100MbpsFastEthernetPhysicalLayer TX/FXSingleChipTransceiver 9.4.14 Auto-negotiation
in „Beschaltung VICOM DM9161CEP“ · Mikrocontroller und Digitale Elektronik ·
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infineon-bsb056n10nn3-g-datasheet-en.pdf
Parameters Parameter Value Unit S V 100 V D G D DS S RDS(on),max 5.6 m D 83 A QOSS 73 A Qg (typ) 56 A Type / Ordering Code Package Marking Related Links BSB056N10NN3 G MG-WDSON-5 0110 - Final Data Sheet 1 Rev. 2.6, 2023-10-12 OptiMOS 3 Power-MOSFET,
in „Bauteilsuche Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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t1610.pdf
quadrants) j BTA16 Symbol Parameters Quadrant BTB16 Unit C B I - II - III 25 50 GT(1) Max. mA V D 12 V, R L 33 Ω IV 50 100 VGT All Max. 1.3 V V V = V , R = 3.3 kΩ, T = 125 °C All Min. 0.2 V GD D DRM L j (2) IH IT= 500 mA Max. 25 50 mA I - III - IV Max. 40 60 IL IG= 1.2 GT mA II Max. 80 120 DS2114 -
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TM56E6422-tenxtechnology.pdf
/CIN2 I/O 18 14 12 5 20 PA1/ADC1 /PWM1O/INT1/CIP1 I/O 19 15 13 7 1 PA3/ADC3 /PWM2O/INT0/CIN I/O 1 16 14 8 4 VSS P DS-TM56E6422_E 13 Rev 0.9, 2024/04/10 TM56E6422 Data Sheet FUNCTION
in „MCU identifikation/Datenblatt - MC9989A0ZQ“ · Mikrocontroller und Digitale Elektronik ·
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25040.pdf
4 CS 12 2 11 Mode 1,1 7 8 3 SCK Mode 0,0 5 6 SI MSB in LSB in High-impedance SO FIGURE 1-3: SERIAL OUTPUT TIMING CS 9 10 3 Mode 1,1 SCK Mode 0,0 13 14 15 SO MSB out ISB out SI Don’t Care DS21204E-page 4 © 2006
in „Eeprom Philip Pines Auslesen mit CH341“ · Fahrzeugelektronik ·
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Battery-Protection-LiIon-2S-HY2120.pdf
status will be released and restore to normal operation mode. . © 2009-2015 HYCON Technology Corp DS-HY2120-V15_EN www.hycontek.com page15 HY2120 2-Cell Lithium-ion/Lithium Polymer Battery Packs Protection ICs 12.Characteristics (Typical Data) 12.1. Overcharge Detection / Release Voltage, Overdischarge
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40146F.pdf
Status bits 16-bit Extended Serial Number (4 bits) (12 bits) Sync Value MSB LSB Button Status Discrimination Bits (4 bits) (12 bits) S S S S I O U U S S ... S 2 1 0 3 N V S S E E ... E D R R R R R ... R 1 0 7 6 ... 0 DS40146F-page 8 © 2011 Microchip Technology
in „Fehlersuche Funksender Zentralverriegelung Toyota Yaris“ · Fahrzeugelektronik ·
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ErklearungDriverSimulation.pdf
Application Maestro, CodeGuard, devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, In-Circuit Serial hold harmless Microchip from any and all damages
in „Spice Simulation von Treiber TC4229“ · Analoge Elektronik und Schaltungstechnik ·
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IRLB8748PBF.PDF
IRLB8748PbF 10000 V = 0V, f = 1 MHZ 14.0 GS D = 32A Ciss = Cgs+ Cgd Cds SHORTED V = 24V Crss = Cgd V 12.0 DS C = C + C ( VDS = 15V oss ds gd g F C l 10.0 ( iss V c e n r 8.0 i 1000 o a - 6.0 a Coss - , t C G 4.0 , C G rss V 2.0 100 0.0 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) Q , Total Gate
in „Funktionsprüfung MOSFET IRL B8748PbF“ · Analoge Elektronik und Schaltungstechnik ·
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main.c
GPIO4 | GPIO GPIO4=BOOT0 | GPIO GPIO4=BOOT0 | GPIO GPIO4=BOOT0 | | * | DCF77 | GPIO DATA=PC11 PON=PC12 | GPIO DATA=PB8 PON=PB9 | GPIO DATA=PB8 PON=PB9 | | * | I2C DS3231 & EEPROM | I2C3 SCL=PA8 SDA=PC9 | I2C1 SCL=PB6 SDA=PB7 | I2C1 SCL=PB6 SDA=PB7 | | * | LDR | ADC ADC1_IN14=PC4 | ADC ADC1_IN5=PA5 | ADC
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EUP3482.pdf
Systems ● Networking Systems ● PC Monitors TypicalApplication Circuit ● Portable Electronics Figure 1. 12V to 3.3V/5V Application Circuit DS3482 Ver1.3Feb. 2011 1 EUP3482 TypicalApplication Circuit (continued) Figure2. 24V to 3.3V/5V Application Circuit Pin Configurations Package Type Pin Configurations
in „Sony Soundbar HT-CT260H nicht mehr einschaltbar - EUP3482A defekt“ · Analoge Elektronik und Schaltungstechnik ·
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Micrel.pdf
Short-Circuit vs. Temperature. Current vs. Temperature. FIGURE 2-9: MIC2915x Ground Current FIGURE 2-12: MIC2915x Ground Current vs. Input Voltage. vs. Temperature. DS20005685B-page 10 2016-2019 Microchip Technology Inc. MIC2915X/30X/50X/75X FIGURE 2-13: MIC29151-xx/2 Enable FIGURE 2-16: MIC29152/3 Adjust
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WC_MiniDev_Shield_v6.pdf
29 A12 2 V+ C15 8 2 DS3231 2 > DI A7 13 28 A11 A5 5 C14 9 3 B0 14 27 A10 + 10 C1+ u GND GND B1 15 26 A9 LDR 11 , TSOP 16 25 12 4 B2 17 24 A8 R 1 B10 18 23 B15 D STM32_3V3_1 19 22 B14 D GND 20 21 B13 WC Shield v6 (OTA) BlackPill +5V B12 GND GND GND (c) 2018 by T.Giese STM32F4x1 used to connect STM32F4x1 with WS2812 Stripes, ESP8266, WC_MiniDev_Shield_v6 v5 DS3231, AMS1117, TSOP, LDR, 24.01.2026 18:18 DS1820, DCF77, DSP Sheet: 1/1 Oct
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_PIC16F176X-7X.pdf
e U 2 C P F P M H F D ( I 8 T 1 C 1 5 C C 1 C C O Z P D M H ( P S E I PIC16(L)F1764 1 7 4 128 512 12 1/3 3 2 8 1/1 1 1/1 1 3 1 1 1 1 2 ü 1 1 PIC16(L)F1765 1 14 8 128 1K 12 1/3 3 2 8 1/1 1 1/1 1 3 1 1 1 1 2 ü 1 1 PIC16(L)F1768 2 7 4 128 512 18 1/3 3 4 12 2/2 2 2/2 2 3 2 1 2 2 2 ü 1 1 PIC16(L)F1769 2
in „Wie im Bereich von 1,2Vdc - 117Vdc einstellbare Konstantspannung aus 20Vdc erzeugen?“ · Mikrocontroller und Digitale Elektronik ·
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TF5000CI.pdf
2ATAD_1DS 82DNG 32P V 7BA 1ATAD_1DS M 72DNG 1P 6 7AA 0ATAD_1DS 62DNG 02 M F I 52DNG 4 M 3 0 41SSERDDA_1DS 42DNG 2 2 22AA 31SSERDDA_1DS 32DNG 32K V C + 2 32BA 21SSERDDA_1DS 22DNG 1K 1 22CA 11SSERDDA_1DS 12DNG 02H + 12BA 01SSERDDA_1DS 02DNG 4H 02AA 32F 12CA 9SSERDDA_1DS 91DNG 1F V 02BA 8SSERDDA_1DS 81DNG 02D 6 02CA 7SSERDDA_1DS 71DNG 61D F 91AA 6SSERDDA_1DS 61DNG 21D 2 0 81Y 5SSERDDA_1DS 51DNG 8D C 2 4SSERDDA_1DS 41DNG
in „CPU SAA7219 per Jtag auf Basis FT2232H ansprechen - Tool schreiben“ · PC Hard- und Software ·
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Datei
Wetterstation1.py
esp32 import machine import onewire import ds18x20 import time async def ap_mode(ssid, password): # Setup DS18B20 on GPIO 4 dat = machine.Pin(4) ds = ds18x20.DS18X20(onewire.OneWire(dat)) sensors = ds.scan() print('Found DS18B20 sensors:', sensors
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Datei
Wetterstation2.py
uasyncio as asyncio from microdot import Microdot import esp32 import machine import onewire import ds18x20 import time async def ap_mode(ssid, password): # Setup DS18B20 on GPIO 4 dat = machine.Pin(4) ds = ds18x20.DS18X20(onewire.OneWire(dat)) sensors = ds.scan() print('Found DS18B20 sensors:', sensors
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MCP1640.pdf
0.8 1.2 1.6 2 2.4 2.8 0 1 2 3 4 5 6 7 8 9 10 V (V) I (mA) IN OUT FIGURE 2-9: 3.3V V vs. V . FIGURE 2-12: PWM Pulse Skipping Mode OUT IN Threshold vs. I OUT . DS22234B-page 6 2011 Microchip Technology Inc. MCP1640/B/C/D Note: Unless otherwise indicated, V = EN = 1.2V, C = C = 10 µF, L = 4.7 µH, V = 3.3V
in „ESP32-C6 an 18650 Akku betreiben“ · Mikrocontroller und Digitale Elektronik ·
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technical.pdf
Rg gmet creates thermal noise. The channel noise is modeled with a user-defined parameter P: i IA F ds = 4·k BT ·G M ·P + K F FS (11.355) ∆f f FE 11.12 Statz Model A popular GaAs MESFET model is the Statz Raytheon model [34]. The equations for the drain- source current writes as follows. α for 0 < Vds
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Viper12a.pdf
normal operation automatically. DD DDoff Figure 8. Overvoltage sequence V DD VDDovp VDDon VDDoff t V DS t 12/21 Doc ID 11977 Rev 2 VIPER12A-E Operation pictures 9 Operation pictures Figure 9. Rise and fall time Figure 10. Start-up V DD current IDD I DD0 VDDhyst V VDDoff VDDon DD IDDch VDS = 100 V F sw=
in „Reparatur Netzteil elektrischer Kamin“ · Analoge Elektronik und Schaltungstechnik ·
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44-vish.pdf
SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available R (Ω) V = 5.0 V 0.028 • Logic-Level Gate Drive DS(on) GS RoHS* Qg(Max.) (nC) 66 • R DS(on)pecified at VGS = 4 V and 5 V COMPLIANT • 175 °C Operating Temperature Qgs(nC) 12 Qgd (nC) 43 • Fast Switching Configuration Single • Ease of Paralleling D • Simple
in „Aus Minus Plus machen?“ · Analoge Elektronik und Schaltungstechnik ·
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Spezifikationstabelle für Series 900 Disk und Washer Resistors
RoHS Compliant SPECIFICATION Type Style Res. range (Ω) Peak energy (J) Watts Typical weight (g) 911DS Disk 10-750 9,000 9.5 80 912DS Disk 5-350 21,000 12 165 913DS Disk 3-220 33,000 14 275 914DS Disk 2-140 52,500 16 455 915DS Disk 1.5-100 70,000 18 608 913WS Washer 3.5-260 27,600 14 230 914WS Washer
in „Neue Bauteile – kleine Relais, nicht durchbrennende LED-Serienschaltungen und Co“ · Analoge Elektronik und Schaltungstechnik · · Screenshots
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sqjq160e.pdf
noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS VGS = 0, D = 250 μA 60 - - V Gate-source threshold voltage V GS(th) VDS = VGS, D = 250 μA 2 3 3.5 Gate-source leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V GS = 0 V V DS= 60 V - - 1 Zero gate
in „Hilfe mit MOSFET Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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VRE104c_Thaler.pdf
HYBRID INCHES MILLIMETER INCHES MILLIMETER PACKAGE DIM MIN MAX MIN MAX DIM MIN MAX MIN MAX E .480 .500 12.1 12.7 A .120 .155 3.0 4.0 L .195 .215 4.9 5.4 Q .015 .035 0.4 0.9 D .775 .805 19.7 20.4 Q1 N/A .030 N/A 0.7 B .016 .020 0.4 0.5 C .009 .012 0.2 0.3 B1 .038 .042 0.9 1.0 G1 .290 .310 7.3 7.8 B2 .095 .105 2.4 2.6 S .085 .105 2.1 2.6 P .004 .006 0.10 0.15 VRE104DS REV. C SEPT 1994
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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Datei
index.html
SCD41 T: <span id="scd_t">--</span> <span class="temp3">°C</span></div> <div class="reading temp2">DS18B20: <span id="ds18">--</span> <span class="temp2">°C</span></div> <div class="reading temp4">BME_T: <span id="bme_t">--</span> </div> <canvas id="sensorChart" width="1200" height="640"></canvas
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Nahaufnahme einer Leiterplatte mit Flachbandkabel
PCB 13332249-00B PCBA 15532249-00 DRIVE SELECT DS0 DS1 DS2 DS3 3.5 5 J15 J12 33 J11 FUJIKURA-S AWM 2836 80C VW-1 MON2 MON4 J13 34
in „Siemens PG685 Testdiskette wird nicht gelesen“ · PC Hard- und Software · · Platinenfotos
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Bauteile.pdf
ST485BDR RS485Treiber 17 24 74xxxx 74HCT161 SMD Counter 30 25 Treiber UCC3801 RS485Treiber 69 26 Treiber DS8921AM 9 27 EEPROM 93LC46A 1KSerielEEPROM 50 28 Mos-Fet IRL2910PBF 20V 61A 132mΩ TO-220AB NKanalMosFET 186 29 FlashSpeicher M28F512-12C1 SMD FlashSpeicher 6 30 Mos-Fet BUZ20 100V 12A 49 31 IGBT STGW45HF60WD
in „Elektronik Bauteile Neuwertig , meist Leistungselektronik“ · Markt ·
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VRE119_Thaler.pdf
HYBRID INCHES MILLIMETER INCHES MILLIMETER PACKAGE DIM MIN MAX MIN MAX DIM MIN MAX MIN MAX E .480 .500 12.1 12.7 A .120 .155 3.0 4.0 L .195 .215 4.9 5.4 Q .015 .035 0.4 0.9 D .775 .805 19.7 20.4 Q1 N/A .030 N/A 0.7 B .016 .020 0.4 0.5 C .009 .012 0.2 0.3 B1 .038 .042 0.9 1.0 G1 .290 .310 7.3 7.8 B2 .095 .105 2.4 2.6 S .085 .105 2.1 2.6 P .004 .006 0.10 0.15 VRE117DS REV. C NOV 2000
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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2304140030_QX-Micro-Devices-QX2304L30T_C219035.pdf
Electronics Technology 11 of 14 QX2304_DS03CN (Shenzhen) Co., Ltd. www.qxmd.com.cn Machine Translated by Google QX2304 High-efficiency PFM synchronous boost DC/DC converter SOT89-3 package dimension diagram: Quancore Electronics Technology 12 of 14 QX2304_DS03CN (Shenzhen) Co., Ltd. www.qxmd.com.cn Machine Translated by Google QX2304 High-efficiency PFM synchronous boost DC/DC converter TO92 package dimension diagram: QX2304_DS03CN Quancore Electronics Technology
in „IC (SOT23-3?) aus Christbaumkerze identifizieren“ · Mikrocontroller und Digitale Elektronik ·
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MCAC75N06YBTP-datasheet-3.pdf
60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source On-Resistance R DS(on) V GS0V, I D20A 5 6 mΩ Diode Characteristics Continuous Body Diode Current S 75 A Diode
in „Suche Ersatz für obsoleten MOSFET MCAC75N06YB-TP (oder Bezugsquelle)“ · Analoge Elektronik und Schaltungstechnik ·
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Bauteile.pdf
PWMController UCC3804 Bedrahtet 40 58 Bauteil RAM BS62LV256SCP70 8 BitRAM 18 59 Bauteil Relais AZ8-1CH-12DEA Zettlert 67 60 Bauteil ROM DS2401 64BitROM 40 61 Bauteil SchottkyDiode USD 945 45V 16A 22 62 Bauteil SchottkyDiode UJD1210K2 10A 1200V Bedrahtet 4 63 Bauteil Shunt Widerstand R068 68mΩ 1% 82 64 Bauteil
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DS-Type-S-SZ-Mersen_2.pdf
max. 100Hz, i [%] 85°C[A] [%] 85°C[A] n , i n u 10000 30x40 30 30 1,9 10301630040 100 2200 35x54 60 12 1,6 22210035054 h 16 w 22000 35x54 20 36 2,8 22301635054 100 25x40 500 8 0,7 10116025040 c 2200 25x40 32 15 1,7 22202525040 220 25x40 400 9 0,8 22116025040 r 160 c 4700 25x40 30 18 1,7 47202525040 470
in „Elko rauh in AEG-Stroboskop von 1955 ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS-Type-S-SZ-Mersen_2.pdf
max. 100Hz, i [%] 85°C[A] [%] 85°C[A] n , i n u 10000 30x40 30 30 1,9 10301630040 100 2200 35x54 60 12 1,6 22210035054 h 16 w 22000 35x54 20 36 2,8 22301635054 100 25x40 500 8 0,7 10116025040 c 2200 25x40 32 15 1,7 22202525040 220 25x40 400 9 0,8 22116025040 r 160 c 4700 25x40 30 18 1,7 47202525040 470
in „Elko rauh in AEG-Stroboskop von 1955 ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
BME280.c
100. */ if (!BME280_ReadMeasurementData (&data[0])) return FALSE; RawTemp = (int32_t)((data[3] << 12) | (data[4] << 4) | (data[5] >> 4)); RawPressure = (data[0] << 12) | (data[1] << 4) | (data[2] >> 4); //printf ("RawPres: %i %i %i\n", (int16_t)data[0], (int16_t)data[1], (int16_t)data[2]); BME280_CalculateTemperature
in „BME280 Sensor - Code für ATmega328 in C“ · Projekte & Code ·
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Datei
rtc_demo.ino
RTC_DS rtc; // die RTC-Echtzeituhr #define printf my_printf /* -------------------------------------------------- my_putchar für my_printf -------------------------------------------------- */ void my_putchar
in „Arduino und CH32V003“ · Mikrocontroller und Digitale Elektronik ·
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OB2502.PDF
resistance OB2502RCP-H 3.3 Ώ OB2502TCP-H 2.2 Ώ ©On-Bright Electronics Confidential Datasheet OB_DOC_DS_2502xA2 - 5 - OB2502x High Precision CC/CV Primary-Side Power Switch CHARACTERIZATION PLOTS VDD vs Istatic 800 ) 700 u 600 i 500 a 300 I 200 100 0 2 4 6 8 10 12 14 16 18 20 22 VDD(V) UVLO_7(ON)(V) vs
in „SNT Gartenbeleuchtung defekt, pulst aber“ · Analoge Elektronik und Schaltungstechnik ·
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vt6k1.pdf
Continuous ID 100 mA Drain current *1 Pulsed DP 400 mA Power dissipation PD *2 0.15 W / TOTAL 0.12 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. www.rohm.com © 2011 ROHM Co., Ltd
in „Bitte um Hilfe Bauteilsuche“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pH4502.pdf
PH 4502 ORP R6 ∞ ORP 0 Ω R7 0Ω pH 510Ω Ph R7 12,5KΩ 12,5= 75 +15 Änderungen auf der Platine für die Redoxmessung Der 0Abgleich (Offset): R? = 0 Ω. Den Verstärkungsfaktor von 3 auf 1herabsetzen. R7 = 0 Ω Widerstand. R6 offen lassen. Neu kalibrieren
in „Automatisierte Ozon-Wasseraufbereitung für Whirlpool“ · Haus & Smart Home ·
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PDF
ISL88731.PDF
the minimum battery voltage of 7.5V VOUT 2 (2.5V/Cell) to 0.88 for the maximum battery voltage of 12.6V. P Q1 conduction = -V - BAT DSON (EQ. 8) The maximum RMS value of the output ripple current occurs at IN the duty cycle of 0.5 and is expressed as Equation 7: The optimum efficiency occurs when
in „Chip gesucht“ · Mikrocontroller und Digitale Elektronik ·
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Tabelle mit Pinbelegungen verschiedener Mikrocontroller-Boards
USART | GPIO: TX=PA11 RX=PA12 | USART2: TX=PA2 RX=PA3 | USART2: TX=PA2 RX=PA3 | ESP8266 GPIO | GPIO: RST=CH_PD=PA4 | GPIO: RST=PB10 CH_PD=PB3 | GPIO: RST=PA0 CH_PD=PA1 | ESP8266 GPIO | GPIO: FLASH=PA4 | GPIO: FLASH=PA4 | GPIO: FLASH
in „WordClock mit WS2812“ · Projekte & Code · · Screenshots
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PDF
MP6528.pdf
Driver Bootstrap diode forward voltage VFBOOT ID= 10mA 0.9 V ID= 100mA 1.3 V V = 5.5V-60V 10 11.5 12.8 VREG output voltage VREG IN V IN5V 2xVIN1 V Maximum source current I (5) 0.8 A OS(5) Maximum sink current IOSI 1 A Gate drive pull-up resistance R V = 1V 8 Ω UP DS HS gate drive pull-down resistance RHS-DN V DS= 1V 1.2 4.3 Ω LS gate drive pull-down RLS-DN V DS= 1V 1 5 Ω resistance LS passive pull-down R LS-PDN 590 kΩ resistance LS automatic turn-on time LS At ENx rising edge 1.8 µs Charge pump frequency fCP
in „H-Brücke 48V, PWM 50kHz, Möglichkeit 100% Duty Cycle on“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Reparaturanleitung.pdf
3,0-4,2 – 3,0–4,2 3,6–4,8 T15 –12 (25-15,0) – –(12,0–12,3) – T16 (25-15) –(12,0–12,3) (12,6–13) T17 4,5-5,5 3,0–4,1 2,0–2,6 T18 7,5-8,5 – 4,5–5,5 5,2–6,1 T19 12 5,1–6,1 4,5–5,5 T20 0,4-1 von –0,2 bis 0,2 0,5–0,8 T22 12 von –0,3 bis 0,3
in „Altes Oszi aus USSR (C1-94). Strahlrücklauf sichtbar.“ · Analoge Elektronik und Schaltungstechnik ·
