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PDF
mcp23008.pdf
Unimplemented bit, read as ‘0’ - n = Value at POR ‘1’ = Bit is set ‘0’ = Bit is clearedx = Bit is unknown DS21919B-page 12 © 2005 Microchip Technology Inc. MCP23008/MCP23S08 The Hardware Address Enable (HAEN) control bit 1.6.6 CONFIGURATION (IOCON) REGISTER enables/disables the hardware address pins (A2, A1
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PDF
BME280_Datasheet.pdf
filter settings 100 90 80 ] 70 [ p 60 filter off s 2 t e 50 4 n 8 p 40 16 e R 30 20 10 00 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 Number of samples Figure 7: Step response at different IIR filter settings BST-BME280-DS001-10 | Revision 1.1 | May 2015 Bosch Sensortec © Bosch Sensortec GmbH reserves
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HYCON-Tech-HY2213-BB3A_C113632.pdf
) VSB vs. Ta . 2. Power Consumption (1) DD vs. Ta （2）I SB vs. Ta © 2012-2015 HYCON Technology Corp DS-HY2213-V05_EN www.hycontek.com Page 10 HY2213 1 Cell Li Battery Charge Balance IC 12. Package Information 12.1.SOT-23-6 Package Unit: mm. SYM ALL DIMENSIONS IN BOL MILLIMETERS . MINIMUM NOMINAL MAXIMUM
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source Reverse Leakage ––– ––– -100 V GS= -12V Q Total Gate Charge ––– 8.0 12 I = 4.0A g D Q gs Gate-to-Source Charge ––– 1.8 2.7 nC V DS= 10V Q gd Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 V GS= 5.0V d td(on) Turn-On Delay Time ––– 7.5 ––– V
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PDF
IRLML2502.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source Reverse Leakage ––– ––– -100 V GS= -12V Q Total Gate Charge ––– 8.0 12 I = 4.0A g D Q gs Gate-to-Source Charge ––– 1.8 2.7 nC V DS= 10V Q gd Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 V GS= 5.0V d td(on) Turn-On Delay Time ––– 7.5 ––– V
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irf3708.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A QT High Frequency Buck Converters for Computer Processor Power Benefits Q Ultra-Low Gate Impedance Q Very Low R DS(on)t 4.5V V GS 2 Q Fully Characterized Avalanche
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PIC16F1939.pdf
unimplemented location, read as ‘0’. Shaded cells are not used by PORTA. Note 1: PIC16F193X only. DS40001574D-page 122 2011-2017 Microchip Technology Inc. PIC16(L)F1938/9 12.5.3 ANSELB REGISTER 12.5 PORTB Registers PORTB is an 8-bit wide, bidirectional port. The The ANSELB register (Register 12-9)
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PDF
Infineon-ApplicationNote_Some_key_facts_about_avalanche-ApplicationNotes-v01_01-EN.pdf
Application Note 11 Version 1.0 2017-01-9 Some keyfactsabout avalanche 2Singlepulse avalanche Figure12 Test circuitto studylowenergyavalancheevents InFigure 13,just after1µsonthex-axis,wecanobservethatBSC014N06NS entersavalanche,asindicatedby the clamping of DS forapproximately40ns.Onthisoccasion,theenergygenerated
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PDF
Infineon-ApplicationNote_Some_key_facts_about_avalanche-ApplicationNotes-v01_01-EN.pdf
Application Note 11 Version 1.0 2017-01-9 Some keyfactsabout avalanche 2Singlepulse avalanche Figure12 Test circuitto studylowenergyavalancheevents InFigure 13,just after1µsonthex-axis,wecanobservethatBSC014N06NS entersavalanche,asindicatedby the clamping of DS forapproximately40ns.Onthisoccasion,theenergygenerated
in „SMD Mosfet mit Z-Diode für induktive Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
01006a.pdf
22 23 24 25 26 27 28 29 30 31 SCK instruction 16-bit address data byte SI 0 0 0 0 0 0 1 0 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0 high-impedance SO DS01006A-page 4 © 2005 Microchip Technology Inc. AN1006 DATA POLLING (RDSR – CHECK FOR WIP SET) After a valid write command is given, the STATUS register can be
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PDF
TPCA8028-H_datasheet_en_20080122.pdf
−55°C o ID = 50 A D - 0.1 20 25 i 25 r D 12.5 0 0 0 1 2 3 4 5 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Y fs⎪ – D R DS (ON) – D ) 1000 Common source 10 ( V DS = 10 V Common source | Pulse test Ta = 25°C f e Pulse test
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Datei
ds18s20.c
) |= _BV(pDS18x20->DS18x20_PIN); _delay_us(480); *(pDS18x20->DS18x20_PORT-1) &= ~(_BV(pDS18x20->DS18x20_PIN)); _delay_us(80); result = (*(pDS18x20->DS18x20_PORT-2)) & (_BV(pDS18x20->DS18x20_PIN)); _delay_us(400);
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PDF
TM56E6422-tenxtechnology.pdf
/CIN2 I/O 18 14 12 5 20 PA1/ADC1 /PWM1O/INT1/CIP1 I/O 19 15 13 7 1 PA3/ADC3 /PWM2O/INT0/CIN I/O 1 16 14 8 4 VSS P DS-TM56E6422_E 13 Rev 0.9, 2024/04/10 TM56E6422 Data Sheet FUNCTION
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PDF
AVR32-64SD20-28-32-48-ProductBrief-DS40002417.pdf
PD4 PA2 6 15 VDDIO2 PA3 7 14 PC3 PA4 8 13 PC2 PA5 9 12 PC1 PA6 10 11 PA7 Power Functionality Power Supply Programming/Debug Ground Clock/Crystal Pin on VDD Power Domain Digital Function Only Pin on VDDIO2 Power Domain Analog Function Product Brief DS40002417E
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PDF
MTE011N10RFP-CystechElectonics.pdf
MTE011N10RFP CYStek Product Specification Spec. No. : C169FP CYStech Electronics Corp. Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 2/ 8 Absolute Maximum Ratings (TC=25C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) V DS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current
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25040.pdf
4 CS 12 2 11 Mode 1,1 7 8 3 SCK Mode 0,0 5 6 SI MSB in LSB in High-impedance SO FIGURE 1-3: SERIAL OUTPUT TIMING CS 9 10 3 Mode 1,1 SCK Mode 0,0 13 14 15 SO MSB out ISB out SI Don’t Care DS21204E-page 4 © 2006
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PDF
Battery-Protection-LiIon-2S-HY2120.pdf
status will be released and restore to normal operation mode. . © 2009-2015 HYCON Technology Corp DS-HY2120-V15_EN www.hycontek.com page15 HY2120 2-Cell Lithium-ion/Lithium Polymer Battery Packs Protection ICs 12.Characteristics (Typical Data) 12.1. Overcharge Detection / Release Voltage, Overdischarge
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PDF
Battery-Protection-LiIon-2S-HY2120.pdf
status will be released and restore to normal operation mode. . © 2009-2015 HYCON Technology Corp DS-HY2120-V15_EN www.hycontek.com page15 HY2120 2-Cell Lithium-ion/Lithium Polymer Battery Packs Protection ICs 12.Characteristics (Typical Data) 12.1. Overcharge Detection / Release Voltage, Overdischarge
in „Bauteil identifizieren: Marking: 3X“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfh5300pbf.pdf
IRFH5300PbF ® HEXFET Power MOSFET V 30 V DS R DS(on) max 1.4 m: (@V GS= 10V) Q g (typical) 50 nC R G (typical) 1.3 : ID (@T = 25°C) 100 h A PQFN 5X6 mm c(Bottom) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated
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PDF
HY2212_EN.pdf
. Ta . 2. Current Consumption (4) IDD vs. Ta © 2015 HYCON Technology Corp DS-HY2212-V03_EN www.hycontek.com page10 HY2212 1 Cell Li-ion/Polymer Battery Charge Balance IC 12. Package Information 12.1. SOT-23-6 Package Description : Unit (mm.) SYM ALL DIMENSIONS IN BOL MILLIMETERS
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PDF
IRL1004.pdf
J D D.U.T. m TOP 32A y1500 55A RG + r BOTTOM 78A -VDD e E I e1200 4.5V AS c p 0.01 n a 900 v e Fig 12a. Unclamped Inductive Test Circuit l u 600 e g i 300 , V S (BR)DSS A E 0 p 25 50 75 100 125 150 175 Starting T , Junction Temperature ( C) VDD J Fig 12c. Maximum Avalanche Energy V DS Vs.DrainCurrent IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K Q G 12V .2 F .3 F 4.5 V Q Q V GS GD D.U.T. -DS VG VGS 3mA Charge G ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform
in „Mosfet als Schalter 100W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PH2925U.pdf
f = 1 MHz; Tj= 25 °C - 1.55 - Ω (AC) Dynamic characteristics QG(tot) total gate charge ID= 50 A; V DS = 10 V; VGS = 4.5 V; - 92 - nC Q gate-source charge Tj= 25 °C; see Figure 10; see Figure 11 - 12 - nC GS QGD gate-drain charge - 20.2 - nC VGS(pl) gate-source plateau ID= 50 A; V DS = 10 V; Tj= 25 °C; - 1.6 - V voltage see Figure 10 ; see Figure 11 Ciss input capacitance V DS = 10 V; VGS = 0 V; f = 1 MHz; - 6150 - pF T = 25 °C; see Figure 12 Coss output capacitance j - 1170 - pF Crss reverse transfer - 814 - pF capacitance d(on) turn-on delay time V DS = 10 V; RL= 1 Ω; V
in „Mosfet IRFP4568PbF wird extrem heiß - warum?“ · Analoge Elektronik und Schaltungstechnik ·
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irlz34npbf.pdf
On-Resistance Vs. Temperature IRLZ34NPbF 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= Cgs + C gd, C ds SHORTED ) 1200 C rss= C gd ( ▯VDS = 44V Ciss C oss= C ds+ C gd e 12 ▯VDS = 28V g F 1000 l ( o e e n 800 r 9 t u c Coss S p 600 o a - 6 , t C G 400 , C▯rss S 3 VG 200 FOR TEST CIRCUIT SEE FIGURE 13 0
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PDF
infineon-irf1010e-mosfet.pdf
Technology D l Ultra Low On-Resistance V DSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature R = 12m DS(on) l Fast Switching G l Fully Avalanche Rated ID= 84A S Description ® AdvancedHEXFET PowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea
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PDF
IRF3205Z.pdf
0V, f = 1 MHZ ID= 66A Ciss = gs + gd, CdsSHORTED 5000 C = C V VDS = 44V rss gd e 16 VDS= 28V Coss = ds + gd g VDS= 11V F l ( 4000 V e Ciss e 12 n u i 3000 o a - a - 8 C 2000 t C G , G 4 1000 Coss V Crss 0 0 0 20 40 60 80 100 120 1 10 100 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig
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PDF
FS14KM-9.PDF
6V I A A R R 5V D 10 D 4 5V 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE V DS (V) DRAIN-SOURCE VOLTAGE V DS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS14KM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE
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PDF
LD7536R.pdf
Start-up resistor Value 540K 1.8M Ω 4 Leadtrend Technology Corporation www.leadtrend.com.tw LD7536R-DS-01a December 2011 LD7536R Electrical Characteristics (TA= +25°C unless otherwise stateCC=15.0V) PARAMETER CONDITIONS MIN TYP MAX UNITS Supply Voltage (Vcc Pin) Startup Current 12 20 μA V COMP=0V 1.0
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PDF
xfft_ds260.pdf
664 645 803 3 3 395 1670 4.23 F O 1 256 R2 Y 12 12 B T N Y B - N XC6VLX75T 704 684 806 3 3 395 1670 4.23 DS260 March 1, 2011 www.xilinx.com 38 Product Specification LogiCORE IP Fast Fourier Transform v7.1 Table 7: Virtex-6 FPGA Family Performance
in „Implementierung der XILINX FFT-Core“ · FPGA, VHDL & Co. ·
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PDF
CS8415A_data.pdf
Clifton Sanchez, is an excellent tutorial on SCMS. It is available from the AES as preprint 3518. 12 DS470F4 CS8415A 4. SERIAL AUDIO OUTPUT PORT A 3-wire serial audio output port is provided. The port can be adjusted to suit the attached device setting the control registers. The following parameters
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PDF
DS2482-800-DS2482S-800.pdf
VCC SDA 3 14 IO0 RP Device #1 SDA Rt 1-Wire lines VDD 4 13 GND (I²C port) SCL IO1 IO2 Device #2 NC 5 12 IO4 µC IO3 AD0 IO5 AD2 6 11 IO5 AD1 IO6 AD2 IO7 AD1 7 10 IO6 DS2482 800 AD0 8 9 IO7 I C is a trademark of Philips Corp. Purchase of I C components from Maxim Integrated Products, Inc., or one of its
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PDF
AR0130_DS_D.pdf
sensor, it is read one row at a time, with the rows and columns sequenced as shown in Figure 7 on page 12. Figure7: ImagingaScene Lens Scene Sensor (rear view) Row Readout Order Column Readout Order Pixel (0,0) PDF:1596224327/Source:6660323313 . AR0130DS -Rev.DPub.3/12EN 12 ©2011AptinaImagingCorporation.Allrightsreserved
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PDF
UPA1721.pdf
SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, I = 5.0 A 8.0 10.5 m R DS(on)2 VGS = 4.5 V, I = 5.0 A 10.0 14.0 m R DS(on)3 VGS = 4.0 V, I = 5.0 A 12.0 17.0 m Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, I = 1 mA 1.5 2.0 2.5
in „RC-Steller Kontronik Smile 30-6-12 Bestückung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
e2928_a8v-vm_se.pdf
Winbond DDR333-512 Winbond DS W942508BH-6 • • 512MB Winbond U24512ADWBG6H20 Winbond DS W942508CH-5 • • 512MB Patriot PDC1G3200+XBLK Patriot DS • • 512MB MDT MDT 512MB MDT DS MDT25B25680-50530 • • 512MB GEIL GE5123200 GEIL DS GL3LC32G88TG
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PDF
NDM3000.pdf
4.5 V, ID= 1.0 A 0.09 0.13 ID(on) On-State Drain Current VGS -10 V, V DS-5 V Q1, Q3, Q5 -10 A VGS 10 V, V DS5 V Q2, Q4, Q6 10 DYNAMIC CHARACTERISTICS C iss InputCapacitance Q1, Q3, Q5 Q1, Q3, Q5 375 pF V = -10 V, V = 0 V, DS GS Q2, Q4, Q6 360 f = 1.0 MHz C oss Output Capacitance
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PDF
CS5343-44_F5.pdf
- 108 384x 48, 64 86 - 108 Table 2. Speed Modes and the Associated Sample Rates (Fs) in Slave Mode 12 DS687F5 Draft 3/10/15 CS5343/4 4.1.2 Master Mode Operation As clock Master, the CS5343/4 generates LRCK and SCLK synchronously on-chip. Table 3 shows the available sample rates and associated clock ratios
in „Genesys 2 (Xilinx Kintex 7): Audio-Codec Implementierung und Filteranbindung“ · FPGA, VHDL & Co. ·
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PDF
APM2095.pdf
Characteristics Output Characteristics TransferCharacteristics 20 20 )16 )16 A -GS=3,4,5,6,7,8V ( t t e12 e12 r r C C i i r 8 -2V r 8 T=125 C D - j I I - - 4 o 4 -1.5V Tj25 C T=-55 C j 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -V DS- Drain-to-Source Voltage (V) -V GS- Gate-to-Source Voltage (V) Threshold
in „Ersatztyp P-Kanal MosFet APM2095P low gate voltage“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IP113A_Datasheet.pdf
internal buffer is full. Confidential. 9/22 January 24, 2005 Copyright © 2004, IC Plus Corp. IP113A LF-DS-R04 IP113A LF Preliminary Data Sheet 1. PIN Description (continued) Pin no. Label Type Description EEPROM interface 45, 46 SDA, SCL IPH, O EEPROM interface 37, 12, 46 A[2:0] IPL PHY address IP113A LF
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PDF
MCP2551.pdf
Timer Reset Time Dominant state Note 1: This parameter is periodically sampled and not 100% tested. DS21667F-page 12 © 2010 Microchip Technology Inc. MCP2551 2.4 Timing Diagrams and Specifications FIGURE 2-4: TIMING DIAGRAM FOR AC CHARACTERISTICS VDD TXD (transmit data input voltage) 0V VDIFF(CANH, CANL
in „MCP2551 Standby Mode wenn AVR im Power down Modus“ · Mikrocontroller und Digitale Elektronik ·
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Datei
thermo.asm
; 15 #asm ; 16 .equ __w1_port=0x12 .equ __w1_port=0x12 ; 17 .equ __w1_bit=6 .equ __w1_bit=6 ; 18 #endasm ; 19 #include <1wire.h> ; 20 ; 21 // DS1820 temperature sensor functions ; 22 #include <ds1820.h> ___ds1820_scratch_pad: .BYTE 0x9
in „Thermometer mit Ds18B20“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ9902.pdf
IISW2 AM4400N / SO8 8 PWM2 ISEN1 17 10TIMER OVP2 Similar 9 16 11SSTCMP1PROT2 Structure 0100 ADIM ISW2 12SSTCMP2ISEN2 for CH2 10 15 TIMER OVP2 11 SSTCMP1 PROT2 14 12 SSTCMP2 ISEN2 13 03/22/2010 OZ9902-DS-0.55 Page 1 Copyright ©2007-2010 by O2Micro All Rights Reserved CONFIDENTIAL Patent Pending Preliminary
in „Philips LCD Backlight Problem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CS4272.pdf
VA VL 10 19 AINB- M0 11 18 AINB+ M1 12 17 AINA+ I2S/LJ 13 16 AINA- RST 14 15 VCOM 8 DS593PP3 CS4272 Pin Name # Pin Description XTO Crystal Connections (Input/Output) - I/O pins for an external crystal which may be used to generate the 1,2
in „was ist "ATAPI channel mixing" Warum kein Ausgangssignal?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
usblc6-2.pdf
put the protection device as close as possible to the disturbance source (generally the connector). DS4260 - Rev 7 page 6/20 USBLC6-2 Crosstalk behavior 2.4 Crosstalk behavior 2.4.1 Crosstalk phenomenon Figure 10. Crosstalk phenomenon RG1 Line 1 V G1 RL1 α1VG1 + β12G2 RG2 Line 2 VG2 R α2VG2 + β21G1 L2
in „STM32 und USB A mit Schutz-ICs“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BME680.pdf
stability is specified in the full accuracy operating pressure range 0‒65 °C Document number: BST-BME680-DS001-00 Revision_1.0_072017 Modifications reserved |Data subject not change without notice | Printed in Germany Bosch Sensortec | BME680 Datasheet 12 | 50 1.5 Temperature sensor specification Table 8:
in „PIR-Sensor wird von BME680 gestört, warum?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BME680.pdf
stability is specified in the full accuracy operating pressure range 0‒65 °C Document number: BST-BME680-DS001-00 Revision_1.0_072017 Modifications reserved |Data subject not change without notice | Printed in Germany Bosch Sensortec | BME680 Datasheet 12 | 50 1.5 Temperature sensor specification Table 8:
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PDF
KSZ8851SNL.pdf
far-end loopback at host side. The host far-end loopback path is illustrated in the following Figure 3-12. DS00002381C-page 30 2017-2021 Microchip Technology Inc. KSZ8851SNL/SNLI FIGURE 3-12: PHY PORT 1 NEAR-END (REMOTE) AND HOST FAR-END (LOCAL) LOOPBACK PATHS RXP/ TXP/ RXM TXM (PHY Port 1 Near-end remote
in „KSZ8851 Ethernet komplizierte Frage.“ · Mikrocontroller und Digitale Elektronik ·
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Datei
messung.c
bestückt return (DS18B20_12_BIT/TIMERBASE); // Wartezeit zurückgeben } MES_DEBUG("\r\n*** Messung fehlgeschlagen. (Kurzschluss?) ***"); return 0; // es wird kein Timer eingeschaltet #else return 1; // Timer auf Minimalzeit
in „1Wire DS18B20 auslesen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FT2232_datasheet.pdf
The device would be a USB 2.0 Full supports division by (n+0), (n+0.125), (n+0.25), Speed device (12Mb/s) as opposed to a USB 2.0 (n+0.375), (n+0.5), (n+0.625), (n+0.75) and (n+0.875) High Speed device (480Mb/s). 14 where n is an integer between 2 and 16,384 (2 ). DS2232D Version 0.91 © Future Technology
in „AVR-Programmierung via USB mit FT2232“ · Mikrocontroller und Digitale Elektronik ·
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PDF
40171a.pdf
lead, near full bright Voltage at PIC12C508, GP2 FIGURE 3: OUTPUT VOLTAGE OF FULL-WAVE PHASE CONTROL 180 160 Peak Voltage 140 120 RMS e t o 100 t t 80 u O 60 AVG 40 20 0 0 20 40 60 80 100 120 140 160 180 Conduction Angle DS40171A-page 4 1997
in „Dimm-IC (230V) für Arduino gesucht“ · Haus & Smart Home ·
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PDF
irlml6344pbf.pdf
PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 12 V G 1 R DS(on) max 29 mΩ 3 D (@V GS = 4.5V) TM R DS(on) max S 2 Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits
in „LEDs: Konstantstrom-Multiplexing. Schaltung & Teile so ok?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PSMN8R7-80PS_MOSFET.pdf
V DS = 80 V; VGS = 0 V; Tj= 25 °C - 0.3 5 µA V DS = 80 V; VGS = 0 V; Tj= 125 °C - - 100 µA I gate leakage current V = -20 V; V = 0 V; T = 25 °C - 10 100 nA GSS GS DS j V GS = 20 V; VDS = 0 V; Tj= 25 °C -
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