-
PDF
PIC_Applikationen.PDF
task 2. time3 ds 1 ; Timer for task 3. time4 ds 1 ; Timer for task 4. time5 ds 1 ; Timer for task 5. time6 ds 1 ; Timer for task 6. time7 ds 1 ; Timer for task 7. ; Remember to change device info if using a different
in „MATRIX-Tastatur“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
fm600tu-07a_e.pdf
Drain cutoff current VDS = VDSS , GS = 0V — — 1 mA V GS(th) Gate-source threshold voltage D = 30mA, V DS = 10V 4.7 6 7.3 V IGSS Gate leakage current VGS = VGSS , DS = 0V — — 1.5 µA rDS(ON) Static drain-source D = 300A T ch= 25°C — 0.53 0.73 (chip) On-state resistance VGS = 15V T ch= 125°C — 0.87 — mΩ V
in „Wechselrichter mit MOSFET Endstufe“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
24LC32A.pdf
only during SCL low. Changes during SCL high are reserved for indicating Start and Stop conditions. DS21713D-page 12 2003 Microchip Technology Inc. 24AA32A/24LC32A 8.0 PACKAGING INFORMATION 8.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX 24LC32A T/XXXNNN I/P13F YYWW 0327 8-Lead
in „I2C Eeprom: Buskollisionen nach einem schnellen Reset“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS8816A-05.pdf
currentlimit,andthermalshutdowninto the WQFN-20L 3x3 package. Dynamic Phase Number Control LosslessR DS(ON)CurrentSensingforCurrentBalance The RT8816A adopts R DS(ON)urrent sensing technique. Currentlimitisaccomplishedthroughcontinuousinductor- Internal/External Soft-Start Adjustable Current Limit
in „Spule auf Synchronwandler wird innerhalb sekunden brennend heiß“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF3708PBF.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on)t 4.5V V GS 2 l Fully Characterized
in „Transistor zum Schalten von 24V/12V“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF3708_IR__1_.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on)t 4.5V V GS 2 l Fully Characterized
in „Mosfet Treiberschaltung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF3708_IR__1_.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low R DS(on)t 4.5V V GS 2 l Fully Characterized
in „24V-Ausgang potentialgetrennt aus einem STM32 3,3V“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRL3713.pdf
Drain-to-Source On-Resistance mΩ ––– 3.3 4.0 V GS= 4.5V,DI = 30A VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V V DS= VGS D = 250µA ––– ––– 50 V DS= 30V, GS = 0V DSS Drain-to-Source Leakage Current ––– ––– 20 µA V DS= 24V, GS = 0V ––– ––– 100 V DS= 24V, GS = 0V, J = 125°C Gate-to-Source Forward Leakage ––– ––– 200
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
APM2095.pdf
Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BVDSS Voltage V GS=0V , DS=-250µA -20 V Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.5 -0.7 -1 V I Gate Leakage Current V =±10V , V =0V ±100 nA GSS GS DS a Drain-Source
in „Ersatztyp P-Kanal MosFet APM2095P low gate voltage“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
A300_25AA640A_25LC640A-MIC.pdf
8 9 10 11 21 22 23 24 25 26 27 28 29 30 31 SCK Instruction 16-bit Address SI 0 0 0 0 0 0 1 1 15 14 13 12 2 1 0 High-Impedance Data Out 7 6 5 4 3 2 1 0 SO © 2008 Microchip Technology Inc. DS21830D-page 7 25AA640A/25LC640A FIGURE 2-2: BYTE WRITE SEQUENCE CS Twc 0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25
in „SPI funktioniert nicht“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
benchmark.c
, x16=10000, y16=27; volatile long r32, x32=0xffee9988, y32=1357; volatile float rf, xf=1000.0, yf=13.3; volatile float x_sin=0.9; // clear 256 single bytes // PIC18@10MIPS = // PIC24@40MIPS = 96.2µs // dsPIC@30MIPS = 128.26µs // ATMEGA@16MIPS = 641µs // LPC2103@60MIPS = 46.93µs pa8 = a; for (i=0; i<
in „LPC2103 63MIPS?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
33963.pdf
DS1633 DS1633 High–Speed Battery Recharger FEATURES PIN ASSIGNMENT TO–220 Recharges Lithium, NiCad, NiMH and Lead acid bat- teries + Retains battery and power supply limits in onboard memory Serial 1–wire
in „[V] 2St Dallas DS1633 Ladechip TO220 3 Pin für“ · Markt ·
-
Bild
dsPIC33A Digital Power Starter Kit mit Komponentenliste
Figure 3-1. dsPIC33A Digital Power Starter Kit (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 HOT AREA, DO NOT TOUCH! LCD1 Buck Converter Stage Buck Load Boost Load Buck Converter Output Push Buttons for Controlling Resistive Loads dsPIC33A Digital Signal Controller (DSC) Trust Anchor Device Programming Connection for dsPIC DSC User and Reset Push Buttons MPLAB Starter Kit for dsPIC33A912MPS506 DM30017-4 Rev 1.0 Table 3-1. dsPIC33A
in „Neue Bauteile: vom Radar bis zum Widerstand“ · Mikrocontroller und Digitale Elektronik · · Screenshots
-
Datei
neuds1820.h
== //pinout 0.10 #define ds1820_port C #define ds1820_pin 3 #define ow_lx 1 #define ow_ly 5 //#define ds1820_port C //#define ds1820_pin 5 #define owds1820_clr pinCLR(ds1820_port,ds1820_pin) #define owds1820_output pinDIRout(ds1820
in „ds1820 + isr/Impulszähler“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
PIC16F1939.pdf
L)F1938 devices, read as ‘0’. 2: Unimplemented, read as ‘1’. 2011-2017 Microchip Technology Inc. DS40001574D-page 137 PIC16(L)F1938/9 13.0 INTERRUPT-ON-CHANGE 13.3 Interrupt Flags The PORTB pins can be configured to operate as The IOCBFx bits located in the IOCBF register are Interrupt-On-Change (IOC
in „MPLAB delay und xtalfreq richtig benutzen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
t1610.pdf
Snubberless™ C = 25 mA standard CW = 35 mA Snubberless™ SW = 10 mA logic level Packing mode RG = Tube DS2114 - Rev 11 page 13/18 T1610, T1635, T1650, BTA16, BTB16 Ordering information Figure 17. Ordering information scheme (T8 series) T 16 35 - 600 G (-TR) Triac series Current 16= 16 A Sensitivity 10 =
-
PDF
nRF24L01P_Product_Specification_1_0.pdf
1: Interrupt not reflected IRQtpin 0: Reflect RX_DR as active low interrupt on the IRQ pin MASK_TX_DS 5 0 R/W Mask interrupt caused bTX_DS 1: Interrupt not reflected IRQtpin 0: ReflectX_DS as active low interrupt IRQthe pin MASK_MAX_RT 4 0 R/W Mask interrupt caused bMAX_RT 1: Interrupt not reflected
in „NRF24L01+ erkennen ob gesendet wird“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
PLC-LOX.txt
digital inputs 17-24 8 analog input 1 0-256 9 analog input 2 0-256 10 service - reset (bit 0) 11 1st DS2438 Temp (value multiplied by 100) 12 1st DS2438 Vad (value multiplied by 100) 13 1st DS2438 Vsens (value multiplied by 100) - 39 DS2438 values (up to 10 sensors) 40-50 DS18B20 Temperature (up to 10
in „1 Wire auf 2 GPIO pins“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
I2C_Sheet.pdf
P5 C57 C32 PC0 G 13 DB6 P6 0u1 100uF R74 14 DB7 P7 BL+ 15 LED-A 10K INTRTC 8 PWM1 SP7 16 LED-K 3 SP2W VCC U12 DS3232 GND 8x2 Q6 NXV75UP R77 JP19 4 Vcc INT/SQW 5 2 1 2 J47 GND Vgs > 1V BL-SEL PB4 6 RTCRES R79 tr~4us 3 4K7
in „NXP PCA8574 hat Phänomen mit 2 Adressen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS2482-800-DS2482S-800.pdf
IO2 TYPICAL OPERATING CIRCUIT SCL 2 15 IO1 VCC SDA 3 14 IO0 RP Device #1 SDA Rt 1-Wire lines VDD 4 13 GND (I²C port) SCL IO1 IO2 Device #2 NC 5 12 IO4 µC IO3 AD0 IO5 AD2 6 11 IO5 AD1 IO6 AD2 IO7 AD1 7 10 IO6 DS2482 800 AD0 8 9 IO7 I C is a trademark of Philips Corp. Purchase of I C components from Maxim
in „1-Wire Leitungs Problem“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MOSFET_N_Dual_DMT3020LSD_LowRDS_SOIC8.pdf
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET BVDSS R DS(ON) Max TA= +25°C Low On-Resistance 30V 20m @ V GS = 10V 16A Low Gate Threshold Voltage T 32m @ V GS = 4.5V 13A Low Input Capacitance N Fast Switching Speed O Low Input/Output Leakage U Description
in „Unerwünschter Peak beim Ausschalten eines Kleinsignal-MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LM35.pdf
as 75 in series with 0.2 or 1 µF from output to ground are often useful. These are shown in Figure 13, Figure 14, and Figure 16. DS005516-8 FIGURE 8. Two-Wire Remote Temperature Sensor (Output Referred to Ground) DS005516-5 FIGURE 5. Two-Wire Remote Temperature Sensor (Grounded Sensor) DS005516-9 FIGURE
in „ADC schwankungen bei Atmega16“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LM35.pdf
as 75 in series with 0.2 or 1 µF from output to ground are often useful. These are shown in Figure 13, Figure 14, and Figure 16. DS005516-8 FIGURE 8. Two-Wire Remote Temperature Sensor (Output Referred to Ground) DS005516-5 FIGURE 5. Two-Wire Remote Temperature Sensor (Grounded Sensor) DS005516-9 FIGURE
in „Flinker Temperatursensor“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irsf3010.pdf
ParameterDefinition Min. Typ. Max. Units Test Conditions Vds,clamp Drain to SourceClampVoltage 50 54 — V ds = 10mA — 56 62 ds = 11A, p = 700 S R ds(on) Drain to Source On Resistance — 70 80 Vin= 5V, ds= 4A — 85 — m V = 4V, I = 4A in ds — 53 — Vin= 10V, ds= 4A Idss DraintoSourceLeakageCurrent — — 10 Vds = 12V
in „PIC steuert High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLB8748PBF.PDF
(nC) DS G Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) DS ) ) t t n 100 TJ= 175°C n 100µsec
in „Funktionsprüfung MOSFET IRL B8748PbF“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
EDN_DI_6594092.pdf
=2×R . 2 IR1 = OITMAX =I IB ; R. = FB ,(6) CC0.6V D4V01 R1 �V2 RV2 1.8V whDS4404OUTMAX isthemaximumout FB . VCC R1=RR 2R 0.6V1 =×R . 2 voltage. Equation 6R 1 R 2 IR13=I R2 +I DS4404, IDS4404 = Equation 6 �V FB � V FB . (7) DSOR04 SDAEquation 4 TO I C MASTER OR
in „Einstellbarer Step-Up Regler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
EDN_DI_6594092.pdf
=2×R . 2 IR1 = OITMAX =I IB ; R. = FB ,(6) CC0.6V D4V01 R1 �V2 RV2 1.8V whDS4404OUTMAX isthemaximumout FB . VCC R1=RR 2R 0.6V1 =×R . 2 voltage. Equation 6R 1 R 2 IR13=I R2 +I DS4404, IDS4404 = Equation 6 �V FB � V FB . (7) DSOR04 SDAEquation 4 TO I C MASTER OR
in „mit µc einstellbarer Spannungsregler“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
0900766b81417515.pdf
PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance V R ID (BR)DSS DS(ON) T A 25°C • Low Gate Threshold Voltage • Low Input Capacitance 35V 35mΩ @ V GS = 10V 13A • Fast Switching Speed • Low Input/Output Leakage -35V 45mΩ @ V GS = -10V -12A • Complementary Pair MOSFET
in „Datenblatt DMG4511SK4 COMPLEMENTARY PAIR MOSEFT“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF540-VIS.PDF
Drain-Source Breakdown Voltage VDS V GS = 0 V, D = 250 µA 100 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, D = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) V DS = VGS, D = 250 µA 2.0 - 4.0 V Gate-Source Leakage I V = ± 20 V - - GSS GS ± 100 nA V = 100 V, V = 0 V - - Zero Gate Voltage Drain Current DSS DS GS 25 µA VDS = 80 V, VGS = 0 V, J = 150 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V D = 17 Ab - - 0.077 Ω Forward Transconductance g fs VDS = 50 V, D = 17 Ab 8.7 - - S Dynamic Input
in „MOSFET für eine Stromgesteuerte Stromquelle“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
GA4A4P.pdf
3.0 V GA4F3P 0.5 2.0 V GA4F3R 0.5 2.0 V GA4A4L 0.9 6.0 V GA4L4K 2.0 8.0 V 2 Data Sheet D16494EJ2V0DS GA4xxx Note 3 PART NUMBER R 1 R2 UNIT MIN. TYP. MAX. MIN. TYP. MAX. GA4A4M 7.00 10.00 13.00 7.00 10.00 13.00 kΩ GA4F4M 15.40 22.00 28.60 15.40 22.00 28.60 kΩ GA4L4M 32.90 47.00 61.10 32.90 47.00 61.10
in „Was für ein Bauteil?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
TPH1R104PB_Datasheet.pdf
Electronic Devices & Storage Corporation Rev.4.0 TPH1R104PB 8. Characteristics Curves (Note) Fig. 8.1 D - DS Fig. 8.2DI -DS Fig. 8.3 VDS- VGS Fig. 8.4 DS - GS Fig.8.5 V DS- VGS Fig..6 VDS - GS ©2015-2018 2018-12-28 Toshiba Electronic Devices & Storage Corporation Rev.4.0 TPH1R104PB Fig. 8.7 ID- V GS Fig. 8.8 R DS(ON) - D Fig. 8.9 R DS(ON) - Ta Fig. 8.10 IDR - VDS Fig.8.11 V(BR)DSS - Ta Fig.8.12 V th- Ta ©2015-2018 2018-12-28 Toshiba Electronic Devices & Storage Corporation 6 Rev.4.0 TPH1R104PB Fig. 8.13 Capacitance
in „MOSFET's umgekehrt betrieben“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
TPH1R104PB_datasheet_en_20181228.pdf
Electronic Devices & Storage Corporation Rev.4.0 TPH1R104PB 8. Characteristics Curves (Note) Fig. 8.1 D - DS Fig. 8.2DI -DS Fig. 8.3 VDS- VGS Fig. 8.4 DS - GS Fig.8.5 V DS- VGS Fig..6 VDS - GS ©2015-2018 2018-12-28 Toshiba Electronic Devices & Storage Corporation Rev.4.0 TPH1R104PB Fig. 8.7 ID- V GS Fig. 8.8 R DS(ON) - D Fig. 8.9 R DS(ON) - Ta Fig. 8.10 IDR - VDS Fig.8.11 V(BR)DSS - Ta Fig.8.12 V th- Ta ©2015-2018 2018-12-28 Toshiba Electronic Devices & Storage Corporation 6 Rev.4.0 TPH1R104PB Fig. 8.13 Capacitance
in „Einfluss von thermischen Vias auf den Wärmetransport eines MOSFETs“ · Platinen ·
-
Datei
PLC-LOX.ino
digital inputs 17-24 8 analog input 1 0-256 9 analog input 2 0-256 10 service - reset (bit 0) 11 1st DS2438 Temp (value multiplied by 100) 12 1st DS2438 Vad (value multiplied by 100) 13 1st DS2438 Vsens (value multiplied by 100) - 39 DS2438 values (up to 10 sensors) 40-50 DS18B20 Temperature (up to 10
in „1 Wire auf 2 GPIO pins“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
ZXBM5210.pdf
thickness) with four thermal vias in the exposed PAD to the copper flood on the bottom layer ZXBM5210 13 of 17 December 2013 Document number: DS36765 Rev. 1 - 2 www.diodes.com © Diodes Incorporated ZXBM5210 Ordering Information T C U D 13” Tape and Reel O Part Number Package Code Packaging Quantity Part
in „Overcurrent Protecion (OCP) bei integrierten Voll-/Halbbrücken“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
A100_IRF3415_IF.pdf
S20V GS µg Total -ate Cyarge BBB BBB 200 ID= 22A µ -ateStoS±ource Cyarge BBB BBB 1f nC V = 120V gs DS µgd -ateStoSDrain 68qiller8M Cyarge BBB BBB m V GS= 10V, ±ee Fig/ ) and 13 t TurnS+n Dela9 TiJe BBB 12 BBB V = f5V d(on) DD r kise TiJe BBB 55 BBB D = 22A t TurnS+(( Dela9 TiJe BBB f1 BBB ns k = 2/5Ω
in „Suche IR 513H“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irl2203npbf.pdf
On-Resistance mΩ GS D 10 VGS= 4.5V, D = 48A V Gate Threshold Voltage 1.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 73 S VDS= 25V, D = 60A 25 V = 30V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 250 VDS= 24V, VGS = 0V, J = 125°C Gate-to-Source Forward Leakage 100 V = 16V IGSS
in „IRL2203N defekt?“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
thermo.asm
***************************** ; 2 thermo.c ; 3 Digital Thermometer -55C to +125C ; 4 AVR 90S2313 & DS1820 ; 5 ; 6 Copyright 2002 by Axel Mehlis ; 7 ; 8 **************************************/ ; 9 ; 10 #include <90s2313.h> ; 11 #include <math.h> ; 12 #include <delay.h> ; 13 ; 14 // 1 Wire Bus functions
in „Thermometer mit Ds18B20“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FDP060AN08A0.pdf
SOURCE VOLTAGE (V) Q , GATE CHARGE (nC) F DS g E T Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge Waveforms for Constant Voltage Gate Current ©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDP060AN08A0 / FDB060AN08A0
in „Simulation IR2183 Halbbrückentreiber“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
APT10050B2VR_B.pdf
°C) DS DSS GS C 250 I Gate-Source Leakage Current (V = ±30V, V = 0V) ±100 nA GSS GS DS V GS(th) Gate Threshold Voltage (V = V , I = 2.5mA) 2 4 Volts DS GS D CAUTION: These Devices are Sensitive to Electrostatic
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BUK7514-55A.pdf
Fig.9. Typical transconductance, T = 25 ˚C. j R = f(I ); parameter V g = f(I ); conditions: V = 25 V DS(ON) D GS fs D DS RDS(ON) Ohm a 30V TrenchMOS 17 2 15 1.5 13 11 1 9 0.5 7 5 6 8 10 12 14 16 18 20 -100 -50 0 50 100 150 200 VGS/V Tj / C Fig.7. Typical on-state resistance, T = 25 ˚C. j Fig.10. Normalised
in „Wärmewiderstandsberechnung FET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BUK_7514-55.pdf
Fig.9. Typical transconductance, T = 25 ˚C. j R = f(I ); parameter V g = f(I ); conditions: V = 25 V DS(ON) D GS fs D DS RDS(ON) Ohm a 30V TrenchMOS 17 2 15 1.5 13 11 1 9 0.5 7 5 6 8 10 12 14 16 18 20 -100 -50 0 50 100 150 200 VGS/V Tj / C Fig.7. Typical on-state resistance, T = 25 ˚C. j Fig.10. Normalised
in „Brauche Hilfe bei Motoransteuerung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS1339.pdf
Note 11) B I/O Capacitance (SDA, SCL) CI/O (Note 12) 10 pF Oscillator Stop Flag (OSF) Delay OSF (Note 13) 100 ms 4 of 18 2 DS1339 I C Serial Real-Time Clock POWER-UP/DOWN CHARACTERISTICS (T = -40▯C to +85°C) (Note 1, Figure 1) A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Recovery at Power-Up t (Note
in „Sehr lange Zeitspannen?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS90LV047A.pdf
D S January 2003 9 0 V 0 4 DS90LV047A A 3V LVDS Quad CMOS Differential Line Driver 3 V General Description Features L The DS90LV047A is a quad CMOS flow-through differential Mbps (200 MHz) switching rates V line driver designed for
in „TFT Display 8bit 16bit 8080 Interface über LVDS“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS90LV047A.pdf
D S January 2003 9 0 V 0 4 DS90LV047A A 3V LVDS Quad CMOS Differential Line Driver 3 V General Description Features L The DS90LV047A is a quad CMOS flow-through differential Mbps (200 MHz) switching rates V line driver designed for
in „Analogsignal über Twisted-Wire übertragen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
sihfr014.pdf
MHz, see fig. 5 Reverse transfer capacitance C rss - 29 - Total gate charge Q g - - 11 ID= 10 A, V DS= 48 V, Gate-source charge Qgs VGS = 10 V see fig. 6 and 13b - - 3.1 nC Gate-drain charge Q gd - - 5.8 Turn-on delay time td(on) - 10 - Rise time r VDD = 30 V, D = 10 A, - 50 - R g 24 Ω, R =D2.7 Ω, see
in „Hilfe bei Bauteil identifikation“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LDO.pdf
temperature (V = 2.6 V, IN IN VOUT = 5 V, OUT = 10 to 1200 mA) V OUT = 1.2 V, OUT = 10 to 1200 mA) DS12022 - Rev 6 page 9/23 LDL1117 Typical characteristics Figure 12. Dropout voltage vs. temperature Figure 13. Quiescent current vs. temperature (no load) ] m e t o u p r D Figure 14. Quiescent current
in „STM32 - 5V tolerante Pins bei Startup“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
PLC-LOX-300.ino
digital inputs 17-24 8 analog input 1 0-256 9 analog input 2 0-256 10 service - reset (bit 0) 11 1st DS2438 Temp (value multiplied by 100) 12 1st DS2438 Vad (value multiplied by 100) 13 1st DS2438 Vsens (value multiplied by 100) - 39 DS2438 values (up to 10 sensors) 40-50 DS18B20 Temperature (up to 10
in „1 Wire auf 2 GPIO pins“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
infineon-bsb056n10nn3-g-datasheet-en.pdf
Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 4100 5500 pF VGS0 V, V =DS V, f=1 MHz Output capacitance Coss - 750 1000 pF VGS0 V, V =DS V, f=1 MHz Reverse transfer capacitance Crss - 27 - pF VGS0 V, V =DS V, f=1 MHz VDD50 V, V =GS V, I =3D A, Turn-on delay time d(on) - 15
in „Bauteilsuche Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
24LC256_32k_I2C-EEPROM.pdf
Microchip’s web site: www.microchip.com. FIGURE 1-1: BUS TIMING DATA 5 2 D4 4 SCL 7 3 8 9 10 SDA 6 IN 16 13 14 SDA OUT WP (protected) 11 12 (unprotected) DS21203M-page 4 2004 Microchip Technology Inc. 24AA256/24LC256/24FC256 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE
in „immer noch EEprom“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
ds1307.c
L-Kiss: Keep It Simple! - Stupid! :-)) | |______| | (c) 2007 by ELEb 2003 |__________| Projectname: ds1307 Filename: ds1307.c Author: P.Berger Version: 1.0 Date: 16.09.2009 15:19:13 Function: Treiber für RTC DS1307: Gibt Datums- und Kalenderinformationen in ASCII Format an den PC mittels RS232 (8-Bit,
in „DS1307 verhält sich komisch“ · Mikrocontroller und Digitale Elektronik ·
