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ATtiny416_50002683A.pdf
hardware platform to evaluate the Microchip ATtiny416. © 2017 Microchip Technology Inc. User Guide DS50002683A-page 4 ATtiny416 Xplained Nano Figure 1-1. ATtiny416 Xplained Nano Evaluation Kit Overview mEDBG Power disconnect (ATmega32U4) Micro USB Connector Status LED mEDBGdisconnect Power Ground Clock
in „Neue 8-Bit Tinys vorgestellt: 417/814/816/817“ · Mikrocontroller und Digitale Elektronik ·
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eSpDS1k2.pdf
Acute DS-1000 series Digital Storage Oscilloscope PRODUCT DESCRIPTION The DS-1000 series (DS-1002, DS-1102, DS-1202) is a PC-based, pocket-sized digital storage oscilloscope (DSO) with various high-end functions
in „USB Oszilloskop“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Class_1_Bluetooth_Module_with_EDR_Support_DS500022-2257897.pdf
Quicker Time to Market • Compatible with Microchip Microcontroller Fami- lies (PIC16F, PIC18F, PIC24F/H, dsPIC33 and PIC32) • Up to 100 meter range 2021 Microchip Technology Inc. DS50002280B-page 1 RN41/RN41N RN41/RN41 MODULE VARIANTS (1) Model Antenna Firmware Description RN41 Ceramic Chip 4.77, 6.15 Class
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PDF
lm317-1.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063
in „Konstantstromquelle“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM317__NAT.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063
in „Frage zu Spannungs/Stromregelschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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564932.pdf
–30 — — V ID= –10 mA, V GS = 0 voltage Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 A, V DS0 voltage Gate to source leak current I — — ±10 A V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –100 A V = –25 V, V = 0 DSS DS GS Gate to source cutoff voltage VGS(off) –1.0 — –2.5
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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APT10050B2VR_B.pdf
°C) DS DSS GS C 250 I Gate-Source Leakage Current (V = ±30V, V = 0V) ±100 nA GSS GS DS V GS(th) Gate Threshold Voltage (V = V , I = 2.5mA) 2 4 Volts DS GS D CAUTION: These Devices are Sensitive to Electrostatic
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
1wire.cpp
License //along with this program. If not, see <http://www.gnu.org/licenses/>. // // //VERSION 1.1 DS2423 for ATTINY2313 and ATTINY25 //FOR MAKE by hand /* avr-gcc -mmcu=[attiny25|attiny2313] -O2 -c ow_slave_DS2423.c avr-gcc.exe -mmcu=[attiny25|attiny2313] ow_slave_DS2423.o -o ow_slave_DS2423.elf avr-objcopy
in „1-Wire Slave auf AVR“ · Mikrocontroller und Digitale Elektronik ·
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Logikanalysator-Screenshot von GPS und DS3231 Signalen
PulseView Analysesitzung 1 Saleae Logic 200 M samples 3 MHz +10 s +20 s +30 s +40 s +50 s GPS 1PPS DS3231SN 32KHz GPS 1PPS Timing: Times GPS 1PPS Counter: Edges 3 9 DS3231SN 32KHz rising edge Counter: Edges DS3231SN 32KHz falling edge Counter: Edges
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PDF
si3459bdv.pdf
noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS VGS = 0 V,DI = - 250 µA - 60 V V Temperature Coefficient ΔV /T - 65 DS DS J I = - 250 µA mV/°C V Temperature Coefficient ΔV GS(th)J D 4 GS(th) Gate-Source Threshold Voltage VGS(th) VDS = VGS , D = -
in „SMD Bauteil identifizieren "*"“ · Analoge Elektronik und Schaltungstechnik ·
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Logikanalysator Screenshot von GPS 1PPS und 32kHz Signalen
1 - PulseView Starten Analysesitzung 1 200 M samples 3 MHz +50 µs +100 µs +150 µs +200 µs GPS 1PPS DS3231SN 32kHz GPS 1PPS Counter: Edges 1 DS3231SN 32kHz rising edge Counter: Edges 1 2 3 4 5 6 7 8 DS3231SN 32kHz falling edge Counter: Edges 2 3 4 5 6 7 8 9
in „Uhrenquarz Genauigkeit messen“ · Mikrocontroller und Digitale Elektronik · · Oszi-Bilder
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PDF
MCP4821-MCP4822.pdf
/4822 NOTES: DS21953A-page 32 © 2005 Microchip Technology Inc. MCP4821/4822 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales.office
in „Digital-Analog-Umsetzer (10V -> 1mV Auflösung)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
RTC3231.c
(); i2c_start_wait(DS3231+I2C_WRITE); // set device address and write mode i2c_write(DS3231_ControlReg); // write address = DS3231_ControlReg i2c_write( (1<<A1IE)|(1<<INTCN) ); i2c_stop(); /* // RTC DS3231_ControlRegister
in „Arduino Pro Mini extern von Sleep Mode aufwecken“ · Mikrocontroller und Digitale Elektronik ·
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Datei
nrf24l01.c
pragma GCC optimize ("O0") /* -------------- System Include Files ----------------- */ #include "stm32f4xx.h" #include "stm32f4xx_rcc.h" #include "stm32f4xx_spi.h" #include "stm32f4xx_gpio.h" /* -------------- Standard Include Files ----------------- */ #include <stdint.h> /* --------------- Special Include
in „STM32F4 und NRF24L01: Frage zu Interrupts“ · Mikrocontroller und Digitale Elektronik ·
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Datei
BME280.c
, &DegC100Temp); /* ** Calculate the humidity value in %RH. */ var1 = (FineTemp - ((int32_t)76800)); var1 = (((((RawHumi << 14) - (((int32_t)dig_H4) << 20) - (((int32_t)dig_H5) * var1)) + ((int32_t)16384)) >> 15) * (((((((var1 * ((int32_t)dig_H6)) >> 10) * (((var1 * ((int32_t)dig_H3)) >>
in „BME280 Sensor - Code für ATmega328 in C“ · Projekte & Code ·
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sihfr014.pdf
CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 μA 60 - - V DS GS D VDS temperature coefficient ΔV DS/TJ Reference to 25 °C, D = 1 mA - 0.068 - V/°C Gate-source threshold voltage V GS(th) V DS= V GS, D = 250 μA 2.0 - 4.0 V Gate-source leakage I V = ± 20 V - - ± 100 nA GSS GS VDS = 60 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA V DS = 48 V, VGS = 0 V, J = 125 °C - - 250 Drain-source on-state resistance R DS(on) VGS = 10 V ID= 4.6 A b - - 0.20 Ω Forward transconductance gfs VDS = 25 V, D = 4.6 A 2.4 - - S Dynamic Input capacitance
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upd65.pdf
A3) CY ← A 3 RLZ A FEF3 if A = 0 reset else (An+) ← (An), (0) ← (A3) CY ← A 3 Data Sheet U14380EJ2V0DS00 32 PD64A, 65 Input/output Instructions Mnemonic Operand Instruction Code Operation Instruction Instruction 1st Word 2nd Word 3rd Word Length Cycle IN A, P0n FFF8 + n — — (A) ← (Pmn) m = 0, 1 n = 0,
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Saleae Logic Logikanalysator Software Screenshot
Logic 200 M samples 3 MHz +1:00.006 65 +1:00.006 70 +1:00.006 75 +1:00.006 80 +1:00.006 85 GPS 1PPS DS3231SN 32KHz Timing: Times 900.101 ms (1.111 Hz) 100.011 ms (9.999 Hz) Counter: Edges 60 61 DS3231SN 32KHz rising edge Counter: Edges 1966079 1966080 1966081 1966082 1966083 1966084 1966085 DS3231SN 32KHz
in „Uhrenquarz Genauigkeit messen“ · Mikrocontroller und Digitale Elektronik · · Oszi-Bilder
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Datei
X_Nucleo_IKS01A1_Shield_Driver.h
LSM6DS0_ACT_DUR 0x05 #define LSM6DS0_INT_GEN_CFG_XL 0x06 #define LSM6DS0_WHO_AM_I 0x0F #define LSM6DS0_CTRL_REG1_G 0x10 #define LSM6DS0_ODR_G2 7 #define LSM6DS0_ODR_G1 6 #define LSM6DS0_ODR_G0 5 #define LSM6DS0_FS_G1 4 #define LSM6DS0_FS_G0 3 #define LSM6DS0_BW_G1 1 #define LSM6DS0_BW_G0 0 #define LSM6DS0_CTRL_REG6_XL 0x20 #define LSM6DS0_ODR_XL2 7 #define LSM6DS0_ODR_XL1 6 #define LSM6DS0_ODR_XL0 5 #define LSM6DS0_FS1_XL 4 #define
in „Verständnisfrage zum #include beim "Auslagern" in .c und .h“ · Mikrocontroller und Digitale Elektronik ·
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gps-ms1e.pdf
module (on the PCB). See Figure 6 for the location of the temperature sensors on the module. GPS-MS-DS-ST-0132 Datasheet GPS-MS1E µ-blox ag, May 16, 2000 Page 14 Figure 6: Sensor Position GPS-MS-DS-ST-0132 Datasheet GPS-MS1E µ-blox ag, May 16, 2000 Page 15 9 Mechanical Specifications Figure 7 shows the
in „Aktive GPS Antenne mit 4,5 Volt wie Einspeisen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RequiresAcrobat6-5.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Power Mosfet Hexfet wie ansteuern ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
projekt_snt.pdf
PWM-BAUSTEIN UC 3825 31 7.1 Das Blockschaltbild des UC3825 31 7.2 Beschreibung der Funktionsblöcke 32 7.2.1 Funktionsblock 1: Fehlerverstärker 32 7.2.2 Funktionsblock 2: PWM-Komparator 32 7.2.3 Funktionsblock 3: Oszillator 32 7.2.4 Funktionsblock 4: Oder-Verknüpfung 32 7.2.5 Funktionsblock 5: Latch zur
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mcp23008.pdf
DEVICE RESET TIMER TIMING VDD RESET 30 32 Internal RESET 34 Output pin © 2005 Microchip Technology Inc. DS21919B-page 23 MCP23008/MCP23S08 TABLE 2-1: DEVICE RESET SPECIFICATIONS Operating Conditions (unless otherwise indicated): AC Characteristics
in „MCP23008 Problem“ · Mikrocontroller und Digitale Elektronik ·
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Datei
config.h
prescaler setting: either 16:1 or 32:1 */ //#define HW_FREQ_COUNTER_EXT #define FREQ_COUNTER_PRESCALER 16 /* 16:1 */ //#define FREQ_COUNTER_PRESCALER 32 /* 32:1 */ /* * event counter * - default pin: T0 (PD4 ATmega 328) * - uses T0 directly
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Datei
config.h
prescaler setting: either 16:1 or 32:1 */ //#define HW_FREQ_COUNTER_EXT #define FREQ_COUNTER_PRESCALER 16 /* 16:1 */ //#define FREQ_COUNTER_PRESCALER 32 /* 32:1 */ /* * event counter * - default pin: T0 (PD4 ATmega 328) * - uses T0 directly
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PDF
L6206.pdf
the following characteristics: Equivalent device: full bridge R 0.15 typ. value at T = 25 °C DS(ON) J 2.8 A max. RMS load current 5.6 A max. OCD threshold Figure 16. Parallel connection with lower overcurrent threshold 96 ▯ $ ▯▯ 96 96 % ▯▯▯▯▯▯'& & ▯ &▯ ▯▯ 2&' $ ▯ (1$ 32:(5 ▯▯ *5281' ' ▯ 5 ▯
in „l6206 Datenblatt Fehler?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DDZ97xx.pdf
Characteristics, DDZ9702S - DDZ9705S DDZ9707S - DDZ9709S DDZ9689S - DDZ9717S 3 of 7 August 2009 Document number: DS30409 Rev. 6 - 2 www.diodes.com © Diodes Incorporated DDZ9689S - DDZ9717S 100m 100m 10m 10m ) ) ( ( T 1m T 1m N E R R R R U C C R E E N N Z Z Z I I 100n 100n 26 28 30 32 34 36 38 38 40 42 44 46 48 50
in „Komparator für 24V LOW BAT“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Class_2_Bluetooth_Module_with_EDR_Support_DS500023-2256355.pdf
reliable PCB • Compatible with Microchip Microcontroller Families mounting (PIC16F, PIC18F, PIC24F/H, dsPIC33 and PIC32) • Class 2 power amplifier with on-board PCB trace antenna (RN42) or external antenna (RN42N) • Up to 10 meter range • Compliance (RN42) Applications - Modular Certified for the United
in „[V] Microchip Bluetooth Module RN41-I/RM und RN42-I/RM“ · Markt ·
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PDF
Infineon-IPP_B_I80N04S4_04-DS-v01_00-en-1518478.pdf
GS=0V - 0.02 1 µA VDS=18V, V GS=0V, 2) - 1 20 Tj=85°C Gate-source leakage current IGSS VGS =20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) VGS =10V, ID=80A - 4.3 4.6 mΩ V =10V, I =80A, GS D - 3.9 4.2 SMD version Rev. 1.0 page 2 2010-04-06 IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04
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Schaltplan eines Dual Slim FDD Adapters
Dual Slim FDD Adapter v1.1 (C) RBSC 2022 CN3 1 +5V 2 INDEX 3 DCHG 4 DS1 5 +5V 6 NC1 7 INDEX 8 READY 9 DS0 10 MOTON 11 DS1 12 DIR 13 DS2 14 STEP 15 MOTON 16 UD 17 DIR 18 UGATE 18 STEP 19 STEP 20 STEP 20 WD 21 UGATE 21 PIN20 22 WD 22 APBOT 23 WD 23 PIN21 24 WGATE 24 PIN22
in „Pinbelegung 3,5" Floppy mit FPC26“ · PC Hard- und Software · · Schaltpläne
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PDF
1811081213_Alpha---Omega-Semicon-AO3400A_C20917.pdf
resistance package to provide D (at GS=10V) 5.7A extremely low R . This device is suitable for use as a DS(ON) RDS(ON)(at GS=10V) < 26.5m load switch or in PWM applications. RDS(ON)(at GS = 4.5V) < 32m RDS(ON)(at GS = 2.5V) < 48m SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings T =25AC
in „Suche Bauteil XOXL-3E“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO3400A.pdf
resistance package to provide D (at GS=10V) 5.7A extremely low R . This device is suitable for use as a DS(ON) RDS(ON)(at GS=10V) < 26.5m load switch or in PWM applications. RDS(ON)(at GS = 4.5V) < 32m RDS(ON)(at GS = 2.5V) < 48m SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings T =25AC
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds1307.c
L-Kiss: Keep It Simple! - Stupid! :-)) | |______| | (c) 2007 by ELEb 2003 |__________| Projectname: ds1307 Filename: ds1307.c Author: P.Berger Version: 1.0 Date: 16.09.2009 15:19:13 Function: *******************************************************************************/ // Einbinden von bestehenden Modulen #include <kiss.h> //ATMega32 Register #include <I2C.h> //I2C Headerfile vom LKiss #include <rs232.h> //RS232 Definitionen #include <avr/iom32.h> //ATmega32 IO Definition #include <avr/interrupt.h> //Interrupt Register //--------
in „ATmega32 und ds1307 Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MB3775.pdf
s i (Large) a a P G −20 −90 R P=0 Ω −40 −180 −610 100 1k 10k 100k 1M 10M 100M Frequency f (Hz) 22 DS04-27204-6E MB3775 Fig. 26 - Ceramic Chip Capacitor (0.1 μF) Temp. characteristic 20 Temp. :Ratio 30°C :0.19 90 ) +25°C :1.0 e 10 +80°C :0.32 ( ) φ B s ( −30°C a A 0 0 P i AV a G +80°C −30°C −10 φ +25
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PDF
58L128.pdf
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM ™ MT58L128L18F, MT58L64L32F, 2Mb SYNCBURST MT58L64L36F; MT58L128V18F, SRAM MT58L64V32F, MT58L64V36F 3.3V V DD , 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and
in „4GSPS ADC SRAM Speicher“ · Mikrocontroller und Digitale Elektronik ·
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Datei
oneWire.c
/ /* Includes **********************************************************************/ #include "stm32f10x_conf.h" #include "Delay.h" #include "oneWire.h" #include "math.h" /* Functions **********************************************************************/ //reset device uint8_t ds1820_reset(GPIO_TypeDef
in „Timingproblem mit Onewire und STM32“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RFM70.pdf
accessible in both PTX W_TX_PAYLOAD or FLUSH TX. mode and PRX mode. 6.2 Interrupt There are three levels 32 bytes FIFO for both TX and RX, supporting both acknowledge mode or no acknowledge mode with up to six In RFM70 there is an active low interrupt (IRQ) pipes. pin, which is activated when TX_DS IRQ, RX_DR
in „SPI und RFM70 [AVR-ASSEMBLER]“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18b20.c
/* Includes ------------------------------------------------------------------*/ #include "stm32f10x_lib.h" #include "ds18b20.h" #include "Param.h" #include <string.h> #include <stdio.h> #include <stdlib.h> char Temperature[10]="00.0"; char read_write_buffer[50]; void delay_nus (vu32 nCount) { u16
in „STM32 DS1820“ · Mikrocontroller und Digitale Elektronik ·
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PDF
P2804BDG.pdf
25 CC Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS ±20 V Continuous Drain Current T C 25 °C I 10 T = 100 °C D 8 C A Pulsed Drain Current I 40 DM T = 25 °C 32 Power Dissipation C P W T = 100 °C D 22 C Operating Junction &
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OPAmp_Layout.pdf
and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC, and may be superseded by updates. It is your responsibility to KEE LOQ , KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, ensure that your application meets with your specifications. 32 PIC logo, rfPIC
in „Transimpedanzwandler für Photodiode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DM8603EP.pdf
Serial Data Management Interface Clock 62 SMI_MDIO I/O Serial Data Management Interface Data In/Out 32 TEST1 I,PD Test Pin 1 Tie to DVDD33 in application 59 TEST2 I,PD Test Pin 2 Tie to DVDD33 in application 63 TEST3 I,PD Test Pin 3 Tie to DVDD33 in application Preliminarydatasheet 13 DM8603-12-DS-P01
in „2 Port Switch IC wie in IP telefonen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DM8603EP.pdf
Serial Data Management Interface Clock 62 SMI_MDIO I/O Serial Data Management Interface Data In/Out 32 TEST1 I,PD Test Pin 1 Tie to DVDD33 in application 59 TEST2 I,PD Test Pin 2 Tie to DVDD33 in application 63 TEST3 I,PD Test Pin 3 Tie to DVDD33 in application Preliminarydatasheet 13 DM8603-12-DS-P01
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PDF
irfp2907.pdf
Temperature Range STG °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.32 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 www.irf.com
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PDF
IRFP2907.pdf
Temperature Range STG °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.32 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 www.irf.com
in „Auto-Kühler-Lüfter per PWM manuell steuern“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPCS8209.pdf
Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R DS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Y |fs 9.2 S (typ.) • Low leakage current: I = 10 μA (max) (V = 20 V) DSS DS • Enhancement mode: V th= 0.5~1.2 V (VDS = 10 V, ID= 200 μA) Absolute
in „DC/DC-Wandler von 2.4 V auf 15 V mit 25 Watt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TC4420.pdf
I U 2: Exposed pad of the DFN package is electrically isolated. O 2004 Microchip Technology Inc. DS21419C-page 1 TC4420/TC4429 Functional Block Diagram VDD TC4429 Inverting 500 µA 300 mV Output TC4420 Input Non-Inverting 4.7V GND Effective Input C = 38 pF DS21419C-page 2 2004 Microchip Technology
in „Peltier-Driver Flyback-Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SI7611.pdf
Gate Charge Qg DS GS D 21 32 Q V = - 20 V, V = - 4.5 V, I = - 9.3 A nC Gate-Source Charge gs DS GS D 7 Gate-Drain Charge Q gd 10 Gate Resistance Rg f = 1 MHz 1.9 2.9 Ω Turn-On Delay Time d(on) 47 71 Rise Time r VDD =
in „gleichwertiger Ersatztyp für Mosfet gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf540n.pdf
––– ––– 44 mΩ VGS = 10V,DI = 16A▯R V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 21 ––– ––– S VDS = 50V,DI = 16AR ––– ––– 25 V = 100V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 80V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Mosfet vor negativer Spannung / Wechselspannung schützen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLIZ44N_IR.pdf
Temperature IRLIZ44NPbF 15 2800 V = 0V, f = 1MHz ID = 25A CGS = C + C , C SHORTED ▯V = 44V Ciss = Cgs gd ds ) DS 2400 rss gd ( ▯VDS = 28V C▯iss Coss = Cds + Cgd e 12 ) t F 2000 o ( V c e 9 n 1600 r i o a C▯oss - p 1200 - C t 6 , a C 800 , S C▯rss G 3 400 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0
in „Toggle Schaltung mit NE555 schaltet ein, aber nicht aus“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP320412-bitA-DConverterDatasheet.pdf
www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21298C-page31 MCP3204/08 NOTES: DS21298C-page 32 2002 Microchip Technology Inc. Information contained in this publication regarding device Trademarks applications and the like is intended through suggestion