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PDF
xminilab-manual.pdf
there might be a defective part. If the unit is powered with • Voltage at +5V should be between +4.75 and +5.25V more than 5.5V, the negative • Voltage at -5V should be between -4.75 and -5.25V • Voltage at +3.3V should be between +3.2 and +3.4V voltage generator would be the first component to get damaged
in „USART - xmodem (Xminilab) - Bildübertragung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
xminilab-manual.pdf
there might be a defective part. If the unit is powered with • Voltage at +5V should be between +4.75 and +5.25V more than 5.5V, the negative • Voltage at -5V should be between -4.75 and -5.25V • Voltage at +3.3V should be between +3.2 and +3.4V voltage generator would be the first component to get damaged
in „ATXmega32 flashen mit ATMEL Flip (Xminilab)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUZ71.pdf
= 0V 50 - - V DSS D GS Gate to Threshold Voltage V V = V , I = 1mA (Figure 9) 2.1 3 4 V GS(TH) GS DS D Zero Gate Voltage Drain Current I T = 25 C, V = 50V, V = 0V - 20 250 µA DSS J DS GS TJ= 125 C, V DS = 50V, GS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
in „BUZ 71 Wie anschliessen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
GWM120-0075P3.pdf
GWM 120-0075P3 Three phase full bridge V DSS = 75 V with Trench MOSFETs ID25 = 125 A in DCB isolated high current package R DSon typ. = 3.7 m Ω L+ P is Gate G3 G1 G5 S3 S5 S1 L1 L2 L3 G4 G6 G2 ns S4 S6 P owerP i S2 L - Applications MOSFETs AC drives
in „Umrichter für E-Kart Anwendung 60V / 120A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS2482-800-DS2482S-800.pdf
DS2482-800 Eight-Channel 1-Wire Maste r www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2482-800 is an I²C™ to 1-Wire bridge device § I²C Host Interface, Supports 100kHz and 400kHz that interfaces directly
in „1-Wire Leitungs Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SD211SeriesDSRevA10.pdf
N-Channel Lateral DMOS Switch, Zener Protected Product Summary PART NUMBER V (BR)DSMin (V) V (GS)thax (V) rDS(on)Max (Ω) C rssax (pF) tONMax (ns) SD211DE 30 1.5 45 @ V GS0V 0.5 2 SD213DE 10 1.5 45 @ V GS0V 0.5 2 SD215DE 20 1.5 45 @ V GS0V 0.5 2 SST211 30 1.5 50 @ V GS0V 0.5 2 SST213 10 1.5 50 @ V GS0V 0.5 2
in „Schaltung mit 2 N-Kanal Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
adc0831.pdf
ADC0831, ADC0834) DS005583-46 DS005583-48 DS005583-47 Note: For ADC0832 addREF Power Supply Current vs fCLK DS005583-29 Leakage Current Test Circuit DS005583-3 7 www.national.com TRI-STATE Test Circuits and Waveforms t1H t 0H DS005583-49 DS005583-50 t1H t0H DS005583-51 DS005583-52 Timing Diagrams Data Input Timing Data Output Timing DS005583-24 DS005583-25 ADC0831 Start Conversion Timing DS005583-26 www.national.com 8 Timing
in „Ein an die SPI - Schnittstelle angeschlossener ADC macht Probleme“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7401_IR.pdf
25 µA V = 16V, V = 0V, T = 125 °C DS GS J I Gate-to-Source Forward Leakage 100 nA VGS = 12V GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Qg Total Gate Charge 48 D = 4.1A Q Gate-to-Source Charge 5.1 nC V = 16V gs DS Qgd Gate-to-Drain
in „IRF7401 - Rds(On)?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf7401.pdf
) BY R A DS(on) t T = 25°C n J r T = 150°C ) 100us u 10 J ( C t i e r r D C 10 1ms e n r a v D e 1 , , ID D 10ms IS T = 25 C A TJ= 150 C VGS = 0V Single Pulse 0.1 A 1 0.0 1.0 2.0 3.0 4.0 0.1 1 10 100 V DS , Drain-to-Source
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
axpert_vm_iii5000__c.pdf
BULK TO-)20 Parts Attribute Reference values Failure status CSD19505KCS (VMIII-3200)Resistor GS: 11.75k Short or explosion TK100E08N1 (VMIII-5200) GD: 115.8k DS: OL Diode SD: 0.463V DS: OL Note1: When you use the multimeter to measure the resistor of the transistor, because of the capacitor in the circuit
in „PV Wechselrichter startet nicht mehr und verursacht Kurzschluss bzw. hohen Strom“ · Analoge Elektronik und Schaltungstechnik ·
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MCP41HVX1.pdf
by design. 82 CS 84 “1” “1” WLAT “0” “0” 70b SCK 70a 83a 83b 80 71 72 SDO MSb BIT6 - - - - - -1 LSb 75, 76 77 73 SDI MSb IN BIT6 - - - -1 LSb IN 74 FIGURE 1-3: SPI Timing Waveform (Mode = 00 ). DS20005207A-page 16 2013 Microchip Technology Inc. MCP41HVX1 TABLE 1-3: SPI REQUIREMENTS (MODE = 00 ) # Characteristic
in „MCP41HVX READCMD falsch verstanden??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
dm45.pdf
CWL CWL ▯ ▯ ▯ WCS tWCH WCS WCH WCS WCH ▯ tWP WP WP ▯ ▯ ▯ ▯ VIH ▯ ▯ WE# VIL ▯ ▯ ▯ tWCR tRWL ▯ ▯ ▯ ▯ ▯ DS tDH tDS DH DS DH ▯ ▯ ▯ VIOH ▯ ▯ DQ VIOL VALID DA▯A VALID DATA VALID DATA ▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ DON’T CARE ▯ ▯ UNDEFINED ▯ TIMING PARAMETERS -6 -6 SYMBOL MIN MAX UNITS SYMBOL MIN MAX UNITS t t AR 45 ns RAD
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PDF
71858.pdf
VGS(th) VDS = VGS ,DI = 250 µA 0.6 1.4 V Gate-Body Leakage GSS VDS = 0 V, VGS = ± 8 V ± 100 nA I V DS = 12 V, GS = 0 V 1 Zero Gate Voltage Drain Current DSS V = 12 V, V = 0 V, T = 70 °C 5 µA DS GS J On-State Drain Currenta ID(on) V DS≥ 5 V, VGS = 4.5 V 40 A V GS = 4.5 V,DI = 17 A 0.0045 0.0055 Drain-Source On-State Resistance a R DS(on) Ω V GS = 2.5 V,DI = 14 A 0.0065 0.008 a Forward Transconductance gfs V DS = 6 V,DI = 17 A 80 S a Diode Forward Voltage VSD IS= 2.7 A, VGS = 0 V 0.70 1.1 V b Dynamic Total Gate Charge Q 21 30 g Gate-Source
in „Mosfet! Wie temperatur berechnen?“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Pinbelegung einer Tang Nano 20K FPGA-Entwicklungsplatine
I2S_LRCK, LCD_B3, IOB29A, 31, 49, IOR49A, LCD_BL, 86, IOL4AA, HSPI_CSN, 79, IOT27B, 2812_DIN, GCLKC_0, DS2_CLK, LED2, IOL49A, 17, GND, DS2_GND, DS2_CMD, LED5, IOL51B, 20, 3V3, DS2_ATTN, DS2_DATA, LED4, IOL51A, 19, 72, IOT40B, HSPI_DIN1, DS2_ATTN, DS2_3V3, LED3, IOL49B, 18, 71, IOT44A, HSPI_DIN0, DS2_DATA, DS2_GND, DS2_CLK, Tang Nano 20K, UPDATE, BANK0, VIO=3.3V, BANK1, VIO=3.3V, BANK6, VIO=3.3V
in „Neuigkeiten von Flash und MRAM, neue Boards für Entwickler“ · Mikrocontroller und Digitale Elektronik · · Screenshots
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PDF
GWS6967.pdf
designed for Li-Ion battery packs and battery switch applications G2 • TSSOP-8 package S2 Features • r DS(ON)= 24mΩ typical at 4.5 Volts TSSOP-8 • r DS(ON)= 37mΩ typical at 2.7 Volts NC NC 1 8 S1 2 S YW2017 7 S2 S1 3 LW X 6 S2 4 6967 5 G1 G2 Top view YWWLLX = assembly year, week and lot number, full or partial
in „Bauteilsuche Hexfet? Hilfe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FQP50N06L-244346.pdf
- V/°C Q / ΔT J Coefficient F I V = 60 V, V = 0 V -- -- 1 μA E DSS Zero Gate Voltage Drain Current DS GS T V DS= 48 V, C = 150°C -- -- 10 μA ® I V = 20 V, V = 0 V GSSF Gate-Body Leakage Current, Forward GS DS -- -- 100 nA M IGSSR Gate-Body Leakage Current, Reverse V GS= -20 V, DS = 0 V -- -- -100 nA
in „Mosfet Treiber (low side) mit current sense Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlr120n.pdf
5.0V r u Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % a 4 r , Fig 10a. Switching Time Test Circuit ID 2 V DS 90% 0 A 25 50 75 100 125 150 175 T C Case Temperature (°C) 10% V GS Fig 9. Maximum Drain Current Vs. d(on) r td(off)f Case Temperature Fig 10b. Switching Time Waveforms 10 ) C J t D = 0.50 ( 1 0.20 s
in „was ist denn da los.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
non-obsolescence-letter.pdf
DS1286 DS1693 DS2252T-64-12 DS12885-T DS1701 DS2252T-64-16 DS1302S-16 DS1702 DS2253T-32-16 DS1302X DS1703 DS2253T-612 DS1305X DS1720 DS225E DS1306X DS17485-C01 DS2290 DS1307X DS1780 DS2291 DS1384 DS1820
in „Massenabkündigungen bei Maxim?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
K4S56163LF.pdf
85°C for Extended, -25 to 70°C for Commercial) Version Parameter Symbol Test Condition Unit Note -75 -1H -1L Burst length = 1 Operating Current CC1 tRC ≥ RC(min) 75 70 65 mA 1 (One Bank Active) IO = 0 mA Precharge Standby Current in ICC2P CKE ≤ V I(max), CC = 10ns 0.5 mA power-down mode ICC2PS CKE &
in „PHILIPS VP5500 VoIP Telefon bei Pollin“ · Mikrocontroller und Digitale Elektronik ·
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PDF
rt8016_richtek_FT8.pdf
u 1.18 n O I 1.5 1.17 1.4 1.16 V IN= 3.6V,IOUT = 0A VOUT = 1.2V, OUT = 0A 1.15 1.3 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) EN Threshold vs. Input Voltage EN Threshold vs. Temperature 1.6 1.6 1.5 1.5 1.4 1.4 ) 1.3 ) 1.3 V 1.2 V 1.2 e 1.1 e 1.1 g g l 1.0
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FSD156MRBN.PDF
reBiability. The absolute maximum ratings are stress ratings only. N — Symbol Parameter Min. Max. Unit G V DS Drain Pin Voltage 650 V r V CC VCC Pin Voltage 26 V e n V FB Feedback Pin Voltage -0.3 10.0 V M I Drain Current Pulsed 4 A o DM d (6) T C25C 1.9 A e DS Continuous Switching Drain Current F T C100C
in „Samsung Clicking Netzteil BN44-00635B Relais RL801S bekommt keine Dauerspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
70667.pdf
(D-S) MOSFET FEATURES PRODUCT SUMMARY V (V) R (Ω) I (A) • Halogen-free According to IEC 61249-2-21 DS DS(on) D Definition 0.025 at GS = 10 V ± 6.9 ® 30 TrenchFET Power MOSFETs 0.035 at VGS = 4.5 V ± 5.8 100 % R Tegted Compliant to RoHS Directive 2002/95/EC D D SO-8 1 2 S1 1 8 D 1 G1 2 7 D 1 S D 2 3 6
in „Li-Ion-Anschlussbezeichnungen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Mosfet_Verluste_Kuehlkoerper.pdf
aufgeteilt wird…) - parallel 3 - für Schalt und Leitendverluste 6 - für Body Diodenverluste 3 R th jc 0,75 °C/W T junc max 150°C R th cs 0,5 °C/W T ambient 40°C Verluste Schalt- Leitend Body Dioden Gesamt I Motor I DS P sw P on P bd P total T case Max R th case-ambient A eff A eff W W W W °C °C/W 15,0 5,0
in „H-Brücke Messungen und Meinung“ · Analoge Elektronik und Schaltungstechnik ·
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irlz24n.pdf
D ,D Fig 1ab3 DgitchinM Time Test Circuit I 4 V DS 90% 0 A 25 50 75 100 125 150 175 TC, Case Temperature (°C) 10% V GS Fig 03 xaAimum Frain Current VsS d(on) tr d(off)tf Case Temperature Fig 1ac3 DgitchinM Time vaEeforms 10 ) J t D = 0.50 ( e 1 s 0.20
in „IR2127 Beschaltung als Low Side Schalter + Mosfet“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HY2212_EN.pdf
package 3. Applications Multi Cells LiFePO4 Rechargeable Battery Packs. www.hycontek.comhnology Corp DS-HY221page4_EN HY2212 1 Cell Li-ion/Polymer Battery Charge Balance IC 4. Block Diagram 5. Ordering Information Product Name define . www.hycontek.comhnology Corp DS-HY2212page5EN HY2212 1 Cell Li-ion
in „LiFepo4 balancer - China ICs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nRF24L01P_Product_Specification_1_0.pdf
No Has ARD elapsed? Put payload in RX TX mode FIFO. Set TX_DS IRQ Retransmit last Yes packet Set TX_DS IRQ and RX_DR IRQ TX Settling No Number of retries = ARC? Yes Note: ShockBurst™ operation is outlined with a dashed square. Figure 10. PTX operations in Enhanced
in „NRF24L01+ erkennen ob gesendet wird“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlz34npbf.pdf
A 0 A 1 10 100 0 4 8 12 16 20 24 28 32 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) t n r ) u 100 ( 100 C n a r 10µs
in „MOSFET defekt (evtl. durch Ohmmeter)?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CFAG12864BTFHV_v3.0.pdf
72 C42 1187.5 27 V0L -1993.5 73 C41 1062.5 28 VDD -1029.598 -2019.8 74 C40 937.5 29 DIO1 -904.598 75 C39 812.5 30 FS -773.200 76 C38 687.5 31 DS1 -648.198 77 C37 562.5 32 DS2 -523.198 78 C36 437.5 33 R -398.198 79 C35 312.5 34 CR -273.198 80 C34 187.5 35 SHL -148.198 81 C33 62.5 36 GND -8.198 82 C32
in „avr asm LCD Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLZ44NPBF-HXY.pdf
20 mΩ Forward Transconductance gFS V DS0V,I =D0A 15 - - S Input Capacitance C - 4050 - PF lss V =25V,V =0 V, Output Capacitance C DS GS - 430 - PF oss F=1.0MHz Reverse Transfer Capacitance Crss - 110 - PF Turn-on Delay Time d(on) - 60 - nS Turn-on Rise Time tr VDD=3 0V,D=40A - 185 - nS (Note 2) Turn-Off Delay Time d(off) R G50Ω - 75 - nS Turn-Off Fall Time tf - 60 - nS Total Gate Charge Q g - 39 - nC V DS0V,I =D0A, Gate-Source Charge Q gs (Note 2) - 9.3 - nC V GS0V Gate-Drain Charge Q g - 13 - nC Diode Forward Voltage VSD V GSV,
in „LED-Streifen fiepen bei PWM <=100%“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
projekt_snt.pdf
Spannungsfestigkeit eingeplant. Es standen zwei Bauteile zur Verfügung: • IXFX26N90 R ≈ 0,3Ω R ≈ 0,54Ω C ≈ 700pF DS_On(25°C) DS_On(125°C) DS • 2SK1489 R DS_On(25°C)1,0Ω RDS_On(125°C)1,84Ω C DS≈ 300pF 4.7.2 Durchlaßverluste Zur Berechnung der Durchlaßverluste wurden die primären Effektivströme bei maximaler und minimaler
in „2kW Gleichstromleistung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
UC1701.pdf
182 SEG74 -202.5 227.75 15138.5 242 COM34 -1850 227.75 15138.5 183 SEG75 -229.5 227.75 15138.5 243 COM35 -1877 227.75 15138.5 184 SEG76 -256.5 227.75 15138.5 244 COM36 -1904 227.75 15138.5 185 SEG77 -283.5 227.75 15138.5 245 COM37 -1931 227.75 15138.5 186 SEG78 -310.5 227.75 15138.5 246 COM38 -1958 227.75 15138.5 187 SEG79 -337.5 227.75 15138.5 247 COM39 -1985 227.75 15138.5 188 SEG80 -364.5 227.75 15138.5 248 COM40 -2012 227.75 15138.5 189
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PDF
91055b.pdf
by one bit 0x25, 0x01 logical maximum (1) 0x95, 0x03 report count (3) Three reports, one bit each 0x75, 0x01 report size (1) 0x81, 0x02 input (data, variable, absolute) Defined bits above are data bits 0x95, 0x01 report count (1) One report, five bits in length 0x75, 0x05 report size (5) 0x81, 0x01 input
in „MC mit USB Interface“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mXrruyr.pdf
03 Usage Maximum 3 16 15 00 Logical Minimum 0 18 25 01 Logical Maximum 1 20 95 03 Report Count 3 22 75 01 Report Size 1 24 81 02 Input Variable 26 95 01 Report Count 1 28 75 05 Report Size 5 30 81 01 Input Constant 32 05 01 Usage Page Generic Desktop 34 09 30 Usage X 36 09, 31 Usage Y 38 15, 00 Logical
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PDF
Linear_Power_MOSFETS_Basic_and_Applications.pdf
or off. In the Ohmic region, the device acts as a resistor with almost a constant on- resistance R DS (on)nd is equal to V ds Ids.he linear-mode of operation, the device operates in the ‘Current-Saturated’ region where the drain current (I ) ds a function of the gate-source voltage (V )gsnd defined by
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HM2302A.PDF
V GS(th) VDSV ,GS D50μA 0.5 0.75 1.2 V VGS2.5V, I D2.5A - 37 59 mΩ Drain-Source On-State Resistance R DS(ON) VGS=4.5V, ID=2.9A - 30 45 mΩ Forward Transconductance gFS VDS5V,I =D.9A - 8 - S Dynamic Characteristics (Note4) Input Capacitance
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PDF
Diodes-Incorporated-B120-13-F_C134421.pdf
°C R V E T = 75°C R E 10 A S R U 10 S E U N E 1 T N TA= 25°C N 1 T T TA= 25°C N S T 0.1 I S I 0.1 , I 0.01 0 10 20 30 40 50 0 10 20 30 40 50 60 V , INSTANTANEOUS REVERSE VOLTAGE (V) R VR, INSTANTANEOUS REVERSE VOLTAGE
in „LT3433, wo finde ich diese Bauteile?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
div_gen_ds530.pdf
and defined in Table 1. X-Ref Target - Figure 1 RFD SCLR CE CLK DIVIDEND QUOTIENT DIVISOR FRACTIONAL DS530_01_041808 Figure 1: Core Pinout Diagram 4 www.xilinx.com DS530 March 1, 2011 Product Specification LogiCORE IP Divider Generator v3.0 Table 1: Radix-2 Signal Pinout Signal Direction (1) Description
in „Xilinx CoreGen: Divider, erkennen wenn der fertig ist“ · FPGA, VHDL & Co. ·
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PDF
DIODES_INC_BCR420UW6_ENG_TDS.pdf
BCR420UW6 / BCR421UW6 4 of 13 November 2015 Document number: DS37667 Rev. 3 - 2 www.diodes.com © Diodes Incorporated BCR420UW6 / BCR421UW6 Typical Electrical Characteristics BCR421U (Continued) (@A = +25°C, unless otherwise specified.) 0.20 VEN3.3V Rext Ohms R =8
in „BCR420W67 zu wenig strom“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
schiebereg.pdf
shift register clock input ST 12 storage register clock input CP OE 13 output enable (active LOW) DS 14 serial data input VCC 16 positive supply voltage handbook, halfpage 11 12 handbook, halfpage Q1 1 16 VCC SHCP STCP Q ' 9 Q2 2 15 Q0 7 Q0 15 Q3 3 14 DS 1 Q1 Q4 4 13 OE Q 2 595 2 Q5 5 12 STCP 14 D Q3
in „wie steuer ich nen sn7447 mit avr an??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC_HCT595_CNV_3.pdf
shift register clock input ST 12 storage register clock input CP OE 13 output enable (active LOW) DS 14 serial data input VCC 16 positive supply voltage handbook, halfpage 11 12 handbook, halfpage Q1 1 16 VCC SHCP STCP Q ' 9 Q2 2 15 Q0 7 Q0 15 Q3 3 14 DS 1 Q1 Q4 4 13 OE Q 2 595 2 Q5 5 12 STCP 14 D Q3
in „LCD DEM20485 in gerade Zeile springen (c't-Bot)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
MultiDS18S20_0.2.bas
======================================================================== ' ' Auslesen von mehreren DS18S20 oder DS18B20 ' ' Erweiterung auf beliebig viele Sensoren Typ DS18B.. oder DS18S.. ' ' Siehe ' http://www.mcselec.com/index.php?option=com_content&task=view&id=75&Itemid=57 ' ' Anpassung von LCD
in „Was brauche ich von der Seriennummer DS18B20?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds1820.c
0xcb, 0x29, 0x77, 0xf4, 0xaa, 0x48, 0x16, 0xe9, 0xb7, 0x55, 0x0b, 0x88, 0xd6, 0x34, 0x6a, 0x2b, 0x75, 0x97, 0xc9, 0x4a, 0x14, 0xf6, 0xa8, 0x74, 0x2a, 0xc8, 0x96, 0x15, 0x4b, 0xa9, 0xf7, 0xb6, 0xe8, 0x0a, 0x54, 0xd7, 0x89, 0x6b, 0x35, }; void ds1820_init(void) { DS1820_PORT_DDR &= ~(1<<DS1820_BIT_1WR); /* 1-Wire auf Eingang */ return; } char ds1820_measure(ds1820_scratchpad *sp) { char rc; rc = ds1820_reset_pulse(); if (rc == DS1820_ERR_OK) { ds1820_skip_rom(); ds1820_convert_t(); rc = ds1820_reset_pulse(); if (rc == DS1820_ERR_OK) { ds1820
in „DS18S20 in C“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS3930.pdf
5 DS3930 16 LO 0-5 2-WIRE INTERFACE SCL LO0-5 I/O0 6 15 HI3-5 DS3930 I/O 7 14 I/0 H3-5 1 W3 I/O2 8 13 W4 NONVOLATILE I/O I/1 W3 V CC 9 12 W 5 VCC I/2 W4 TERMINALS W GND 10 11 I/3 VCC 5 DECOUPLI0.1µFP DIGITAL
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PDF
irlu024n.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
in „Konstantstromquelle mit JFet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlu024N.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
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PDF
MOSFET_IRF630_N-Ch_TO-220AB_200V_9_A.pdf
Gate Threshold Voltage VGS(TH) V GS = VDS D I = 250µA 2 - 4 V Zero Gate Voltage Drain Current IDSS V DS = Rated BVDSS , VGS = 0V - - 25 µA o V DS = 0.8 x Rated BDSS , VGS = 0V, TJ= 125 C - - 250 µA On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , GS = 10V 9 - - A Gate to Source Leakage
in „Hilfe bei transistor auswahl/suche“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlr2905_1_.pdf
Vs. Temperature www.irf.com 3 IRLR/U2905 2800 15 VGS = 0V, f = 1MHz ID = 25A Ciss = Cgs + Cgd , C ds SHORTED V = 44V 2400 C = C V DS rss gd ( VDS = 28V Ciss Coss = Cds + Cgd e12 ) a F 2000 o ( V e e n 1600 r 9 t u c S a Coss o a 1200 - 6 C t , a C 800 , S Crss G3 400 V FOR TEST CIRCUIT SEE FIGURE 13
in „Motortreiber“ · Analoge Elektronik und Schaltungstechnik ·
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IRLU2905.pdf
Vs. Temperature www.irf.com 3 IRLR/U2905 2800 15 VGS = 0V, f = 1MHz ID = 25A Ciss = Cgs + Cgd , C ds SHORTED V = 44V 2400 C = C V DS rss gd ( VDS = 28V Ciss Coss = Cds + Cgd e12 ) a F 2000 o ( V e e n 1600 r 9 t u c S a Coss o a 1200 - 6 C t , a C 800 , S Crss G3 400 V FOR TEST CIRCUIT SEE FIGURE 13
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PDF
51292S.pdf
-ICE 3.6V PIC18F45J10 PIC18LF44J10 3.6V PIC18LF45J10 2.75V(1) Note 1: VDDCORE Max 2: Header required for other devices. 2010 Microchip Technology Inc. DS51292S-page 29 Optional Headers TABLE 1: OPTIONAL HEADERS BY DEVICE (CON’T) Pin Header Part Device Count
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PDF
84123_usb_i2c_handbuch_v1_7.pdf
dem PCF8574......................................................... 29 4.5.2. Echtzeituhr mit dem DS1307...................................................................... 31 4.5.3. EEPROMs beschreiben/auslesen (24C01, 24C02...)................................. 33 4.5.4. Thermometer-Sensor (DS75,
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