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PDF
DW01-P.pdf
VCC i P C O CS VCC i P O GND VCC i S C VOI1 GND V CH TOC TOC Fortune Semiconductor Corp. TEL: +886-2-2809-4742 8/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P 2. Overdischarge
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zuverlaessigkeit-von-supercaps.pdf
+ - + - + + - - + - - + - + - + - + - + + - + - + + - - + - Elektrolyt ϕ Potential0+ ϕ 1 0 ϕ0− ϕ 1 C DS1 ESR C DS2 Fakultät für ETIT - Professur für Leistungselektronik und EMV IEEE Chapter Meeting Chemnitz, 11.-12.Mai 2006 M. Bodach, H. Mehlich: Zuverlässigkeitsaspekte bei der Anwendung von Supercaps
in „Verständnisfrage Doppelschichtkondensator (Ultracap,Goldcap, Superkondensator)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BME680.pdf
°C Operating Range 11 0 100 % r.H. 0 65 °C Full accuracy range 10 90 % r.H. 1 Hz forced mode, Supply Current IDD,H temperature and humidity 2.1 2.8 µA measurement Absolute Accuracy A 20‒80 % r.H., 25 °C
in „PIR-Sensor wird von BME680 gestört, warum?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BME680.pdf
°C Operating Range 11 0 100 % r.H. 0 65 °C Full accuracy range 10 90 % r.H. 1 Hz forced mode, Supply Current IDD,H temperature and humidity 2.1 2.8 µA measurement Absolute Accuracy A 20‒80 % r.H., 25 °C
in „BME680 Berechnung Temperatur Luftfeuchtigkeit Druck Gas Fragen Initialisierung Assembler ASM ATmega8“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MPQ4210_r1.1_MPS.pdf
4.5 I A R 5.5 F L O 4 V 5 V U U I C 3.5 V 4.5 V 4 3 -45 -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130 TEMPERATURE (ºC) TEMPERATURE (ºC) EN UVLO Rising vs. Temperature EN UVLO Falling vs. Temperature 2 2 1.9 1.9 ) 1.8 V 1.8 ( ( G 1.7
in „Controlling DC DC converter with STM32“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2594HVM-5.0_Datenblatt.pdf
Typical Performance Characteristics 5 9 / Continuous Mode Switching Waveforms L V = 20V, V = 5V, I = 400 mA Discontinuous Mode Switching Waveforms M IN OUT LOAD V = 20V, V = 5V, I = 200 mA 5 L = 100 µH, COUT = 120 µF, COUT ESR = 140 m IN OUT LOAD 9 L = 33 µH, C OUT = 220 µF, OUT ESR = 60 m 4 H V DS012439
in „Idee für ein ||transportables|| Handyladegerät“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF9Z34-Vishay.pdf
doc?91000 IRF9Z34, SiHF9Z34 Vishay Siliconix 2000 VGS= 0 V, f = 1 MHz ) Ciss Cgs+ Cgd CdsShorted A C = C t 1600 Crss= Cgd+ C e ) oss ds gd r p u ( C C 101 c 1200 iss a 175 C n r 25 °C i D a 800 Coss r p e C e R 0 400 D 10 I Crss - VGS = 0 V 0 10 0 101 0.0 1.0 2.0 3.0 4.0 5.0 91092_05 - VDS,Drain-to-Source
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PDF
Datasheet_LT3433.pdf
125mA load. U TYPICAL APPLICATIO S 4V-60V to 5V Converter with Switched Burst Enable and Shutdown L1 DS1 100µH B160A COEV DU1352-101M VOUT 5V D2 4V < IN< 8.5V: 125mA 1N4148 D S2 + C7 8.5V < IN< 60V: 350mA B120A 47µF Efficiency R4 C5 VBST SW_L 10V 90 20k 1µF V = 13.8V VBATT 10V SW_H PWRGND 80 IN (SWITCHED
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PDF
AO3404A.pdf
Rev.5.0: June 2015 www.aosmd.com Page 3 of 4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 600 V DS5V 500 8 ID=5.8A ) C ) p 400 iss t 6 ( o c ( a 300 S i V 4 a a 200 Coss C 2 100 C 0 0 rss 0 2 4 6 8 0 5 10 15 20 25 30 Q gnC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 30 10 s T =150°C 10.0 R J(Max) DS(ON) TA=25°C ) limited 20 p 100 s ) m ( ( 1.0 1ms e D 10ms w I P 10 0.1 T =150°C DC 0.1s J(Max) TA=25°C 10s 0.0 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 VDS(Volts) Pulse Width
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PDF
BMP581.pdf
NVM_DATA_LSB NVM_DATA_MSB As a consequence, hybrid accesses on these registers are not allowed. 5.6I²C protocol BMP581 supports the following I²C modes: normal mode (100 kHz) fast mode (100 - 400 kHz) fast mode plus (400 kHz - 1 MHz) The I²C slave address of BMP581 is 7'h46 for SDO = 1'b0 and 7'h47
in „Datenlogger Pendeluhr“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SI4946CDY.pdf
IDSS DS GS μA VDS = 60 V, VGS = 0 V, TJ= 70 °C - - 10 a On-state drain current ID(on) V DS≤ 10 V, VGS = 10 V 8 - - A V = 10 V, I = 5.2 A - 0.0330 0.0409 Drain-source on-state resistance a R DS(on) GS D Ω V GS
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LDO_ME6211C33M5G.PDF
200 300 400 500 0 100 200 300 400 500 Output Current(mA) OutputCurrent(mA) ME6211C28M5G ME6211C18M5G Output Current VS.Droput Voltage 700 OutputCurrentVS.DroputVoltage 1200 600 ) ) V1000 V500 ( e e 800 a400 a o l 600 t300 V p t r p 400 D200 o D 200 100 0 0 0 100 200 300 400 500 0 100 200 300 400 500 Output Current(mA) OutputCurrent(mA) V14 www.microne.com.cn Page 13 of 20 ME6211 （4）Input Voltage VS. Supply Current（Ta = 25 ° C） ME6211C33M5G
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PDF
AL5802-DIO.pdf
. AL5802 3 of 11 March 2014 Document number: DS35516 Rev. 9 - 2 www.diodes.com © Diodes Incorporated AL5802 Thermal Characteristics T C U I T P M W E N I E C A V AMBIENT TEMPERAURE (°C) D Fig. 2 Derating Curve A Fig. 3 Max Power vs. Area Fig. 4 Thermal
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GSMParkHeatingControl_V1.1.pdf
vio T101 +12V R404 R405 R406 6 K109 braun D101 +4V 2 F 3 +/ K110 C101 R105 5k6 1k8 1k8 T401 6 n 6 µ T100 SH_ON/OFF D403 C 1 C 0 1K +12V IC400 +4V_SW 1 BCW66 100nF IRLML6401 IC600 R106 a OE GND Lüften/Heizen i uD d / P6KE6V8CA C408 I/O VL8 I/O Vcc8 U600 680 + V G F O
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PDF
irlu024n.pdf
= 17 TJ= 25°C n ) t ( i 2.5 t s n TJ= 175°C e e R u 10 n 2.0 C O ) e c d r u z u o l 1.5 o - a - t r t n o - 1 a ( 1.0 i D r D ,) , o 0.5 ID S V = 15V D DS R 0.1 20µs PULSE WIDTH 0.0 VGS = 10V A A 2 3 4 5 6 7 8 9
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PDF
irlu024N.pdf
= 17 TJ= 25°C n ) t ( i 2.5 t s n TJ= 175°C e e R u 10 n 2.0 C O ) e c d r u z u o l 1.5 o - a - t r t n o - 1 a ( 1.0 i D r D ,) , o 0.5 ID S V = 15V D DS R 0.1 20µs PULSE WIDTH 0.0 VGS = 10V A A 2 3 4 5 6 7 8 9
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93C86.pdf
be obtained from Microchip’s web site at www.microchip.com. 1996-2012 Microchip Technology Inc. DS21132F-page 3 93C76/86 TABLE 1-3: INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION) Instruction SB Opcode Address Data In Data Out Req. CLK Cycles READ 1 10 X A8 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0 29
in „asm Code für EEPROM 93C86“ · Mikrocontroller und Digitale Elektronik ·
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PMBFJ620_1.pdf
gate-source cut-off voltage; typical values. mcd221 mcd222 150 80 gos RDSon ( S) ( ) 60 100 40 50 20 0 0 −1 −2 −3 −4 0 0 −1 −2 −3 V (V)4 V GSoffV) GSoff V DS= 10 V; D = 10 mA; T j 25 °C. VDS = 100 mV; V GS = 0 V; j = 25 °C. Fig 4. Common-source output conductance as
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PDF
LM2677_2000.pdf
Switching Waveforms VIN = 20V, VOUT = 5V, LOAD = 5A V IN= 20V, VOUT = 5V, LOAD = 500 mA L = 10 µH, COUT = 400 µF, COUTESR = 13 m L = 10 µH, C OUT = 400 µF, C OUTESR = 13 m DS101301-17 DS101301-18 A: V Pin Voltage, 10 V/div. A: V Pin Voltage, 10 V/div. SW SW B: Inductor Current, 2 A/div B: Inductor Current,
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PDF
EMB20P03G.pdf
0V, V = ‐15V, f = 1MHz Output Capacitance C oss GS DS 208 pF Reverse Transfer Capacitance C rss 164 Gate Resistance Rg V GS 15mV, V = 0DS f = 1MHz 4.5 Ω Total Gate Charge 1,2 Q gV GS0V) 20.3 Q g VGS4.5V ) V DS = ‐15V, V GS‐10V, 9.8 I = ‐10A nC
in „Logo & Bezeichnung von defektem IC gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TC55V16256FT.pdf
UB (I/O9 to I/O16) Cycle Time 12 15 20 25 ns • Package: Operation (max)220 190 160 140 mA SOJ44-P-400-1.27 (J) (Weight: 1.64 g typ) TSOP II44-P-400-0.80 (FT) (Weight: 0.45 g typ) Standby:4 mA (both devices) PIN ASSIGNMENT (TOP VIEW) PIN NAMES 44 PIN SOJ 44 PIN TSOP A0 to A17 Address Inputs A4 1 44 A5
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PDF
irlml2502.pdf
Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I = 4.0A c D ) n ( s n s e R 1.5 u n C O d c e e u T = 25 C r zl o J o a 1.0 - - ro - - N i i ( r T J 150 C r D
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PDF
93LC56B.pdf
pin TSSOP packages CLK GENERATOR Vss • Available for the following temperature ranges: - Commercial (C): 0°C to +70°C - Industrial (I): -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 93LC56A/B are 2K-bit, low-voltage serial Electrically Erasable PROMs. The device memory is configured as x8 (93LC56A
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PDF
1151463626.pdf
(3% SiFe) 16.5 750 .012 100 Hz .006 250 Hz .004 1 kHz .002 2 kHz Supermendur (49% Co) 22 940 .004 400 Hz .002 1 kHz Orthonol (50% Ni) 15 500 .004 1.5 kHz .002 4 kHz .001 8 kHz Permalloy (80% Ni) 7.4 460 .004 4 kHz .002 10 kHz .001 20 kHz .0005 40 kHz Amorphous-C 14.5 390 .001 25 kHz Amorphous-E 5.75
in „Stromwandler MBS ASK31.3 50/5A Nachbau?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3231_M_MZ_Mems.pdf
DS3231M ±5ppm, I C Real-Time Clock General Description Benefits and Features The DS3231M is a low-cost, extremely accurate, I C real- ●● Highly Accurate RTC With Integrated MEMS time clock (RTC). The device
in „(empfindlicher) GPS Modul gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
EE93LC46A.pdf
and 8-pin TSSOP packages Available for the following temperature ranges: DESCRIPTION - Commercial (C): 0°C to +70°C The Microchip Technology Inc. 93LC46AX/BX are 1K- - Industrial (I): -40°C to +85°C bit, low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 (93LC46A)
in „Programieren eines 93LC46A (EEPROM) mit einem Attiny 13A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
oncilla_schaltplaene.pdf
1 2 6080 + + R5117 + C5105 R5102 R5105 470K C5102 C5104 250uF/450V 100K / 2W 68R 1n 2kV 1n 2kV 2 3 2 1 R5113 D5103 D5104 C5108 C5109 C5110 R5118 DS5101 27K C 1N5408 1N5408 100uF 400V 100uF 400V 1uF 400V 100K / 2W LAMP NEON
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PDF
B154EW04_VB.pdf
case is connected with signal GND. 6 B154EW04 V.B Page /23 4-2 Interface block diagram Using receiver：DS90CF364(National semiconductor) Corresponding Transmitter：DS90C363,DS90C383(National semiconductor） （ Computer side ） (TFT-LCD side ) DS90C*363 DS90CF364 6 TxIN 0～ 5 RXIN0+(6) RxOUT0～5 6 R0～R5 R0～R5 6
in „Notebookdisplay als "normalen" Bildschirm verwenden“ · PC Hard- und Software ·
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PDF
lm2733.pdf
specified: V = 5 IN SHDN pin is tied to V . IN Figure 7. Feedback Voltage vs Temperature Figure 8. R DS(ON) vs Temperature Figure 9. Current Limit vs Temperature Figure 10. R DS(ON) vs V IN 100 90 V = 10V 80 V = 5V IN ) IN ( 70 Y 60 C V IN3.3V E 50 I F 40 E 30 20 10 0 0 200 400 600 800 1000 LOAD CURRENT
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PDF
Battery-Protection-LiIon-2S-HY2120.pdf
VDD+0.3 V CS input pin voltage VCS VDD-33 to VDD+0.3 V Operating Temperature Range TOP -40 to +85 °C Storage Temperature Range TST -40 to +125 °C Power dissipation P D 250 mW . © 2009-2015 HYCON Technology Corp DS-HY2120-V15_EN www.hycontek.com page8 HY2120 2-Cell Lithium-ion/Lithium Polymer Battery
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PDF
Battery-Protection-LiIon-2S-HY2120.pdf
VDD+0.3 V CS input pin voltage VCS VDD-33 to VDD+0.3 V Operating Temperature Range TOP -40 to +85 °C Storage Temperature Range TST -40 to +125 °C Power dissipation P D 250 mW . © 2009-2015 HYCON Technology Corp DS-HY2120-V15_EN www.hycontek.com page8 HY2120 2-Cell Lithium-ion/Lithium Polymer Battery
in „Bauteil identifizieren: Marking: 3X“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MIC5233-3.3YS-microchip-20221000.pdf
power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability. 2: Design guidance only, not production tested. 2018-2022MicrochipTechnologyInc.anditssubsidiaries DS20006033E-page
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Datei
ems.txt
contain the following data (in this order): C000h, 00h C400h, 01h C800h, 02h CC00h, 03h EXAMPLE 2 96 An expanded memory board has a large page frame starting at address C0000h and has mappable conventional memory from 90000h through 9FFFFh. For
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PDF
catalog.pdf
DS18B20Z+ Temperature Sensor IC, Digital, 0.5C, -55 C, +125 C, SOIC, 8 MPN: MCP9700AT-E/TT [ID]: 000098 [Price]: 0.31 USD [QTY]: 15 [Category]: Temperature and Humidity Sensors [Desc]: MICROCHIP - MCP9700AT-E/TT - Temperature Sensor IC, Voltage, ± 2°C, 0 °C, 70 °C, SOT-23, 3 Pins MPN: DS18B20-SL+T&R [ID]: 000115 [Price]: 3.31 USD [QTY]: 3 [Category]: Temperature and Humidity Sensors [Desc]: Temp Sensor Digital Serial (1-Wire) 3-Pin TO-92 T/R MPN:
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PDF
catalog.pdf
DS18B20Z+ Temperature Sensor IC, Digital, 0.5C, -55 C, +125 C, SOIC, 8 Page 80/105 Bauteileliste vom 12.08.2022 MPN: MCP9700AT-E/TT [ID]: 000098 [Price]: 0.31 USD [QTY]: 15 [Category]: Temperature and Humidity Sensors [Desc]: MICROCHIP - MCP9700AT-E/TT - Temperature Sensor IC, Voltage, ± 2°C, 0 °C, 70 °C, SOT-23, 3 Pins MPN: DS18B20-SL+T&R [ID]: 000115 [Price]: 3.31 USD [QTY]: 3 [Category]: Temperature and Humidity Sensors [Desc]: Temp Sensor Digital Serial (1-Wire) 3-Pin TO-92 T/R MPN:
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PDF
catalog-3.pdf
DS18B20Z+ Temperature Sensor IC, Digital, 0.5C, -55 C, +125 C, SOIC, 8 Page 80/105 Bauteileliste vom 12.08.2022 MPN: MCP9700AT-E/TT [ID]: 000098 [Price]: 0.4272 USD [QTY]: 15 [Category]: Temperature and Humidity Sensors [Desc]: MICROCHIP - MCP9700AT-E/TT - Temperature Sensor IC, Voltage, ± 2°C, 0 °C, 70 °C, SOT-23, 3 Pins MPN: DS18B20-SL+T&R [ID]: 000115 [Price]: 4.5612 USD [QTY]: 3 [Category]: Temperature and Humidity Sensors [Desc]: Temp Sensor Digital Serial (1-Wire) 3-Pin TO-92 T/R MPN
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PDF
L6203.pdf
EN = H V IN= H L = 0 10 15 mA EN = L ( Fig. 1,2,3) 8 15 mA f Commutation Frequency (*) 30 100 KHz c Tj Thermal Shutdown 150 °C T d Dead Time Protection 100 ns TRANSISTORS OFF DSS Leakage Current Fig. 11 Vs= 52 V 1 mA ON RDS On Resistance Fig. 4,5 0.3 0.55 V DS(ON) Drain Source Voltage Fig. 9 IDS= 1A
in „Schrittmotorsteuerung verbessern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
cd00000089-1795323.pdf
EN = H V IN= H L = 0 10 15 mA EN = L ( Fig. 1,2,3) 8 15 mA f Commutation Frequency (*) 30 100 KHz c Tj Thermal Shutdown 150 °C T d Dead Time Protection 100 ns TRANSISTORS OFF DSS Leakage Current Fig. 11 Vs= 52 V 1 mA ON RDS On Resistance Fig. 4,5 0.3 0.55 V DS(ON) Drain Source Voltage Fig. 9 IDS= 1A
in „[V] Motortreiber 2x L6203 Multivatt11 und 5x Siemens TLE4205“ · Markt ·
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PDF
cd00000089-1795323.pdf
EN = H V IN= H L = 0 10 15 mA EN = L ( Fig. 1,2,3) 8 15 mA f Commutation Frequency (*) 30 100 KHz c Tj Thermal Shutdown 150 °C T d Dead Time Protection 100 ns TRANSISTORS OFF DSS Leakage Current Fig. 11 Vs= 52 V 1 mA ON RDS On Resistance Fig. 4,5 0.3 0.55 V DS(ON) Drain Source Voltage Fig. 9 IDS= 1A
in „[V] 2St. DMOS Full Bridge L6203 Multiwatt 11 Gehäuse“ · Markt ·
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PDF
MBI5040_Datasheet_V1.00-English.pdf
DCLK–SDO tPD0 IH DD - 25 33 ns V ILGND Propagation Delay Time GCLK – OUT4n * tPD1 R ext700Ω - 50 - ns V DS1V LE–SDO** tPD2 R L150Ω - 30 40 ns t C =10pF - 5 - ns OUT4n+1 * DL1 L Staggered Delay of Output t C 1100nF - 10 - ns OUT4n+ 2 * DL2 C 2=10µF tDL3 C SDO=10pF - 15 - ns OUT4n+3 * V LED4.0V Pulse Width
in „TLC5940 (PWM driver) | Kauftip!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Transistor_Dual_PushPull_ZXTC2045E6.pdf
latest version. D N SOT26 I Dim Min Max Typ A1 0.013 0.10 0.05 T A A2 1.00 1.30 1.10 M E1 E A3 0.70 0.80 0.75 R b 0.35 0.50 0.38 c 0.10 0.20 0.15 O D 2.90 3.10 3.00 F e - - 0.95 N e1 - - 1.90 I b E 2.70 3.00 2.80 E a1 E1 1.50 1.70 1.60 C e1 L 0.35 0.55 0.40 N a - - 8° A a1 - - 7° V All Dimensions in mm D A2 A1 A A3 Seating Plane a L e c Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C1 Dimensions Value (in mm) C 2.40 C1 0.95 Y1 G C G 1.60 X 0.55 Y 0.80 Y1 3.20 Y X ZXTC2045E6
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2585.pdf
Electrolytic CIN2—0.1 µF Ceramic T—22 µH, 1:1 Schott67141450 D—1N5820 COUT —680 µF, 16V Aluminum Electrolytic C —0.47 µF Ceramic C RC —2k FIGURE 2. LM2585-3.3 and LM2585-5.0 DS012515-20 CIN1—100 µF, 25V Aluminum Electrolytic CIN2—0.1 µF Ceramic L—15 µH, Renco #RL-5472-5 D—1N5820 COUT —680 µF, 16V Aluminum Electrolytic
in „12V + 12V = 24V ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I = 4.0A c D ) n ( s n s e R 1.5 u n C O d c e e u T = 25 C r zl o J o a 1.0 - - ro - - N i i ( r TJ= 150 C r D
in „Hilfe bei Bauteilidentifizierung erbeten (MOSFET, SOT23)“ · Offtopic ·
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PDF
IRLML2502.pdf
Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I = 4.0A c D ) n ( s n s e R 1.5 u n C O d c e e u T = 25 C r zl o J o a 1.0 - - ro - - N i i ( r TJ= 150 C r D
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
innoswitch3-ep_family_datasheet.pdf
V DS (V) Figure 41. Output Characteristics. Figure 42. OSSvs. Drain Voltage. 450 2 100 2 Scaling Factors: 0 2 400 INN3697C 0.32 - - 4 8 INN3699C 1.0 8 10 I 350 INN3690C 1.4 I ) P P ( ) 300 t Scaling Factors
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PDF
FS14KM-9.PDF
I R S U 100 10ms I 20 C 7 D I 5 E A 3 W 10 D 2 TC= 25°C O Single Pulse P 10–1 DC 7 0 5 1 2 3 0 50 100 150 200 2 3 5 710 2 3 5 710 2 3 5 710 2 CASE TEMPERATURE T C (°C) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS OUTPUT
in „High speed switching mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AV02-0923EN-DS-ATF-55143-08Jun20120.pdf
Figure33. TypicalATF-55143LNAwithPassiveBiasing. Resistor R3 is calculated based on desired V , I and ds ds available power supply voltage. Capacitors C2 and C5 provide a low impedance in-band RF bypass for the matching networks. Resistors R3 and VDD–V ds (1) R3 = R4 provide a very important low frequency
in „LNA Entwicklung von 10 MHZ bis 6 GHZ“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Laborausstattung.pdf
1 GS/s, RS-232 1 DSO-3062 (mod DSO-3202) Oszilloskop USB - DSO, 2 Kanäle, 200 MHz, 1 GS/s 1 Rigol DS-1102CD Oszilloskop + 16-Kanal-LA USB - DSO: 2 Kanäle, 100 MHz, 400 MS/s, LA: 16-Kanäle 4 HP-54645D Oszilloskop + 16-Kanal-LA IEE - DSO: 2 Kanäle, 100 MHz, 200 MS/s, LA: 16/8-Kanäle, 200/400 MS/s 2 HP
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PDF
MGA-62563__AV02-1237EN_.pdf
25°C,Z =50Ω,VC=3V,I =20mAO d ds Freq. S11 S21 S12 S22 K-factor GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. 0.1 0.274 -53.949 20.92 11.121 157.035 0.054 5.715 0.094 -80.83 1.05 0.2 0.265 -60.28 20.67 10.806
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PDF
Display_Controller.pdf
314~319 VOUT_OUT 313 VDD 312 DS1 311 DS0 310 MF0 8 309 MF1 308 MF2 2 307 TA 21 V0 306 Mode 20 V1 5 300~305 VSS 19 V2 C C . . 7 284~299 VSS2 18 V3 C 268~283 VDD2 17 V4 C 262~267 VDD 16 VOUT T 260~261 D7 15 D7 C S 258~259 D6 14 D6 256
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