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adc101s051-q1_1_.pdf
CHARACTERISTICS SINAD Signal-to-Noise Plus Distortion Ratio VA= +2.7 to 5.25V 61.5 60.8 dB (min) IN = 100 kHz, −0.02 dBFS SNR Signal-to-Noise Ratio VA= +2.7 to 5.25V 61.6 61.1 dB (min) IN = 100 kHz, −0.02 dBFS THD Total Harmonic Distortion VA= +2.7 to 5.25V −79 −72.5 dB (max) IN = 100 kHz, −0.02 dBFS V
in „Ausgangsstrom MISO ADC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tps61202.pdf
VO= 5 V, 10 10 Power Save Enabled 0 0 0.10 1 10 100 1000 0.10 1 10 100 1000 I - Output Current - mA O - Output Current - mA O Figure 5. Efficiency vs Output Current Figure 6. Efficiency vs Output Current 100 100 TPS61202 VI= 3.6 V O = 500 mA IO= 1000
in „Schaltplan überprüfen gerne auch Verbesserungen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
hardware_t.cpp
_4_Active = true; DAC_Correction[2][0] = 100; DAC_Correction[2][1] = 130; DAC_Correction[2][2] = 100; DAC_Correction[3][0] = 100; DAC_Correction[3][1] = 130; DAC_Correction[3][2] = 100; } //disable triggersource and triggering triggering = 0;
in „Wittig(welec) DSO W20xxA Open Source Firmware (Teil3)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
u_kunde.c
kunde_partner_notiz_t *selected) { ht_table("class=grdialog cellspacing=0 cellpadding=0 style='width: 100%%;'"); TR ht_td("colspan=99 class=grtitle"); ht_table("width=100%%"); TR ht_td("class=grtitle"); cat("Notizen zu Partner"); spaces(2); rd_subselect_objekt(self); RD ht_submit(kunde_callback(cb_kunde_notizen_uebersicht
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15C02CH-_CD_-.pdf
1000 V CE (sat) -- I C V =2V I / I =20 CE 7 C B V 5 7 Ta =75° C m - 3 E 25 °C ) 2 F 5 a , ( a --5° C C100 G r V 7 °C n t e 5 75 C e 3 m ta Ta= 25° u - o 3 - C t V C 2 r no 2 C D c at 25° l u 10 o a 7 C S 5 100 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 Collector Current
in „SMD-Bauteil cd 2 D4“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
V , T ≤ 175°C. mended footprint and soldering techniques refer to application note #AN-994. SD DD (BR)DSS J Pulse width ≤ 400μs; duty cycle ≤ 2%. R θs measured atJT approximately 90°C. 2 www.irf.com IRFP4668PbF 1000 1000 VGS TOP 15V TOP 10V 10V ) 8.0V ) 8.0V t 100 7.0V ( 7.0V n 6.0V n 6.0V r 5.5V r 5.5V u BOTTOM 4.5V u 100 BOTTOM 4.5V e 10 C r r o u - ≤60μs PULSE WIDTH S t 1 t i Tj = 25°C n r r 10 D D ,D 0.1 ,D I I 4.5V 4.5V ≤60μs PULSE WIDTH Tj = 175°C 0.01 1 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage
in „Ersatz Mosfet für 6kw Wechselrichter "Reliable/WZRELB"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
slau049f.pdf
) 1) UxBR ) 3 –4 Ǔ 100% + 2.83% BRCLK ǒbaud rate Ǔ Data bit D3 Error [%] + BRCLK (4 ) 1) UxBR ) 3 –5 100% +*1.95% Data bit D4 Error [%] +bBRCLKate (5 ) 1) UxBR ) 4 –6 Ǔ 100% + 0.59% Data bit D5 Error [%] +baud
in „Umrechnung: C-Code->Assembler-Code->Cycles“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2861180.pdf
Parameter Symbol Test Conditions Min. Max. Unit. OFF Characteristics Collector-Emitter Breakdown Voltage V(br)ceo Ic= 0.1mA, Ib = 0 40 - Collector-Base Breakdown Voltage V(br)cbo Ic= 100µA, Ie = 0 60 - V Emitter-Base Breakdown Voltage V(br)ebo Ie= 100µA, Ic = 0 5 - Emitter Cut-Off Current Iebo V be= 4V, c =
in „[V] NPN: 6 St. 2N3053 und 12St. 2N5334 / TO39“ · Markt ·
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Datei
F_Tech_LCD3.html
><strong>tRE</strong> <dd>Enable rise time (25ns max)<br> Enable line must change state (L->H) in less than 25ns <DT><strong>tFE</strong> <dd>Enable fall time (25ns max)<br> Enable line must change state (H->L) in less than 25ns <DT><strong>tAS</strong> <dd>Address setup time (140ns min)<br> Register Select and R/W lines must be valid 140ns before enable pulse arrives <DT><strong>tAH</strong> <dd>Address hold time (10ns min)<br> RS and R/W must be valid at least 10 ns after enable goes
in „textausgabe im lcd“ · Mikrocontroller und Digitale Elektronik ·
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Datei
index.htm
HTML PUBLIC "-//W3C//DTD HTML 4.01 Transitional//EN"> <html> <head> </head> <body> ~inc:header.inc~ <br> <div id="content"> <div id="status"> <div id="loading" style="display: none;">Error:<br> Connection to demo board was lost.</div> <br> <div id="display"> <span style="float: right; font-size: 9px; font-weight
in „Tools/Icons für Webpage auf dem Mikrocontroller“ · Mikrocontroller und Digitale Elektronik ·
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PDF
dgFutaba_VFD-Text-M-M2425_EN.pdf
display lines to 1. N = 1 : Sets the number of display lines to 2 (It has to be set on this module). BR1, BR0 = 0,0: Sets the luminance level to 100%. 0,1: Sets the luminance level to 75%. 1,0: Sets the luminance level to 50%. 1,1: Sets the luminance level to 25%. 4-4-7. CGRAM ADDRESS SET RS R/W DB7 DB6
in „VFD auf 4 Bit-parallel-Mode stellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
csd18502kcs.pdf
I = 100A, R = 0Ω d(off) Turn Off Delay Time DS G 33 ns t Fall Time 9.3 ns f Diode Characteristics VSD Diode Forward Voltage SD = 100A, VGS= 0V 0.8 1 V Qrr Reverse Recovery Charge VDS= 20V, F = 100A, 105 nC
in „Netzteil: 2 Mosfets parallel OK?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NTMFS4C09N.pdf
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V (BR)DSS VGS = 0 V,DI = 250 mA 30 V Drain−to−Source Breakdown Voltage V(BR)DSSt V GS = 0 V,D(aval) 8.4 A, 34 (transient) Tcase= 25°C, transient100 ns V Drain−to−Source Breakdown Voltage V(BR)DSS/ 14.4 Temperature
in „Kontrolle Eagle Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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5500-0080_VQC_DisplayAdapter_V2R1.pdf
VCCZ 1A MAX L1 +5V 9 VCC R7 VCC VCCLED GND 10 GND 10K VCCZ C6 C21 C22100uH 10K 1n0 3 Z1 CON10 R8 0u1 100uF 100uF 10K ROW SELECTOR R TBD to reduce EMI C14 C15 C16 AO3401A C23 D1 2 U3 U5 1n0 1n0 1n0 1 Q2 2 R18 100uF 3 QA 3 1 A Y0 15 R10 10K 33R 1 9 4 2 14 R11 10K 3 Z2 8 CLR QB 5 3 B Y1 13 R12 10K BAT54C-HF CLK QC C Y2 AO3401A QD 6 BR1 Y3 12 R13 10K Q3 1 A QE 10 BR2 VCC 6 G1 1 2 VD1 2 11 BR3 4 2 1 RES-INT- GND B QF 12 5 G2A 11 R14 10K 3 Z3 VCC VCC OUT QG R4 G2B Y4 QH 13 Y5 10 R15 10K AO3401A 3 33R 9 R16 10K Q4 GND GND MC74HC164_SM1
in „Als Mikro noch Makro war: Die "Dicke Tal- Uhr"“ · HF, Funk und Felder ·
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PDF
2SD2118.pdf
otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 50 - - V IC=50µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 20 - - V IC=1mA, I B0 Emitter-base breakdown voltage V(BR)EBO 6 - - V IE=50µA, IC=0 Collector cut-off current ICBO - - 0.5 µA V
in „Transistor durchgebrannt woher neuen?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
io.h
definitions as documented \ref avr_signames "here". Finally, the following macros are defined: - \b RAMEND <br> The last on-chip RAM address. <br> - \b XRAMEND <br> The last possible RAM location that is addressable. This is equal to RAMEND for devices that do not allow for external RAM. For devices that allow external RAM, this will be larger than RAMEND. <br> - \b E2END <br> The last EEPROM address. <br> - \b FLASHEND <br> The last byte address in the Flash program space. <br> - \b SPM_PAGESIZE <br> For devices with bootloader support, the flash pagesize
in „direkt in ein Register des Tiny5 schreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Burr-Brown-ADS1230.pdf
60Hz ±1Hz, Internal Oscillator 80 90 dB Normal-Mode Rejection DATA= 10SPS (3) External Oscillator 90 100 dB Common-Mode Rejection at DC, AVDD = 0.1V 110 dB DATA= 10SPS 53 nV, rms Input-Referred Noise DATA= 80SPS 100 nV, rms Power-Supply Rejection at DC, AVDD = 0.1V 90 100 dB Voltage Reference Input Voltage
in „Konzept für eine Waage gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Akku-Waechter.pdf
Akku-Wächter Laden Akku-Wächter.spl 25.04.13 + - Entladen +5V + Akku rt + 10k 100k 100k 47k + + L2,5V 100V - - - 10k LCD 16*2 25V Drain br Vo Kontrast 0,9V 1µ 2,2V 1k5 ISP 6V 47k +12V 78L05 1µ 10µ 5V B 100n 100n 100n A +12V Offset 1µ +5V 4 1k 4k7 10k 47k 4µ7 100n 4µ7 500 100n 7 PB0
in „Akku - Zustandsautomat“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm25117.pdf
APRIL 2011–REVISED AUGUST 2015 www.ti.com Application Curves (continued) V IN Current Control (CC) 100 k: VCC CIN UVLO VIN RES DEMB VCC SW CVCC 10 k: 100: 15 k: DHB 100 k: LM25117 PNP RAMP HB 1 nF C HB Q 1500 pF HO H 68 PH VOUT 100 k: CV Mode : 5V CM CC Mode: 2A SW LMV431 QL 200 k: LO 80 PF VCCDIS CS
in „DC-DC Wandler mit MCP42010“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bc559.pdf
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (C = –10 mAdc,BI = 0) BC559 –30 — — BC560 –45 — — Collector–Base Breakdown Voltage V(BR)CBO Vdc (C = –10 Adc,EI = 0) BC559 –30 — — BC560 –50 — — Emitter–Base Breakdown Voltage V(BR)EBO –5.0 —
in „Transistorfrage: mit Masse 12V leiten?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf7389.pdf
Characteristics @ T = 25°C (unleJs otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 30 — — V V GS= 0V, D = 250µA P-Ch -30 — — V GS= 0V, D = -250µA N-Ch — 0.022 — Reference to 25°CD I = 1mA V (BR)DSSTJ Breakdown Voltage Temp. Coefficient P-Ch
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
Characteristics @ T = 25°C (unleJs otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 30 — — V V GS= 0V, D = 250µA P-Ch -30 — — V GS= 0V, D = -250µA N-Ch — 0.022 — Reference to 25°CD I = 1mA V (BR)DSSTJ Breakdown Voltage Temp. Coefficient P-Ch
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
Characteristics @ T = 25°C (unleJs otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 30 — — V V GS= 0V, D = 250µA P-Ch -30 — — V GS= 0V, D = -250µA N-Ch — 0.022 — Reference to 25°CD I = 1mA V (BR)DSSTJ Breakdown Voltage Temp. Coefficient P-Ch
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Env_I2C_Scanning.asm
.equ I2C_WR_STP, 0x40 ; I2C Temp Sensor TMP101 Slave Address + RNW .equ ADR_I2C_WR, 0x94 ; $4A => 100_10_10 + Write_0 ; Result: 100_10_10_0 .equ ADR_I2C_RD, 0x95 ; 100_10_10_(1) ; I2C Temp Sensor TMP101 registers Burr Brown .equ ADR_I2C_TEMP, 0x00 ; TI-Sensor Data .equ ADR_I2C_CFG, 0x01 ; TI-Sensor Data_1 ;.equ VAL_I2C_CLKDIV, 0x7C # 62.5MHz / (5*100KHz) - 1 for Soft I2C ;.equ VAL_I2C_CLKDIV, 0x18 # 10MHz / (4*100KHz) - 1 = 24 for EFB I2C .equ VAL_I2C_CLKDIV, 0x04 # 2MHz / (4*100KHz) - 1 = 4 for EFB I2C init_i2c: ; init EFB i2c module ; EFB address
in „Probleme bei Lattice I2C EFB mit Wishbone Interface“ · FPGA, VHDL & Co. ·
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PDF
2N2904.pdf
Typ Max Unit Collector Cutoff Current I V = 50V − − 20 nA CBO CB Collector−Base Breakdown Voltage V (BR)CBOIC= 10A 60 − − V Collector−Emitter Breakdown VoltagV (BR)CEOIC= 10mA 40 − − V Emitter−Base Breakdown Voltage V I = 10A 5 − − V (BR)EBO E Collector−Emitter Saturation VoltagVCE(sat)IC= 150mA, IB=
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PDF
Si_4420.pdf
Receiver bandwidth mode 2 180 200 225 kHz mode 3 240 270 300 mode 4 300 350 375 mode 5 360 400 450 BR FSK bit rate With internal digital filters 0.6 115.2 kbps BRA FSK bit rate With analog filter 256 kbps -3 Pmin Receiver Sensitivity BER 10 , BW=67 kHz, BR=1.2 kbps (Note 2) -109 -100 dBm AFC range AFC
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PDF
S8050_J3Y.pdf
otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO C =100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO C =0.1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO E =100μA,IC=0 5 V Collector cut-off current I V =40V,I =0 0.1 μA CBO CB
in „ESP LED PWM Ansteuerung mit Transistor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TLC5922.pdf
Type Drawing Qty TLC5922DAP ACTIVE HTSSOP DAP 32 46 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) TLC5922DAPG4 ACTIVE HTSSOP DAP 32 46 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) TLC5922DAPR ACTIVE HTSSOP DAP 32 2000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) TLC5922DAPRG4 ACTIVE
in „daisy-chaining Verzögerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lmv7219.pdf
Office/ Distributors for availability and specifications. (3) Human body model, 1.5 kΩ in series with 100 pF. Machine model, 200Ω in series with 100 pF. (4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding
in „Operations verstärker als Komparator verschlechterung der Slewrate?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datenblatt_irgbc20f.pdf
Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Volta600 — — V V GE= 0V, C = 250µA V(BR)ECS Emitter-to-Collector Breakdown Volta20 — — V V GE= 0V, C = 1.0A V(BR)CESJ Temp. Coeff. of Breakdown Voltage — 0.72 — V/°
in „LTspice XVII: IGBT einfügen“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
PCM1738.asm
NOP NOP SBI PortB, 2 ; MC / Clock 1 NOP NOP RET ; ##### Warten, Zeit verbraten WAIT_1s: RCALL WAIT_100ms WAIT_900ms: RCALL WAIT_100ms WAIT_800ms: RCALL WAIT_100ms WAIT_700ms: RCALL WAIT_100ms WAIT_600ms: RCALL WAIT_100ms WAIT_500ms: RCALL WAIT_100ms WAIT_400ms: RCALL WAIT_100ms WAIT_300ms: RCALL WAIT
in „DAC PCM1738 mode control programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BC856BDW1T1-D.PDF
, SBC857B Only −50 − − BC858 Series −30 − − Collector−Base Breakdown Voltage V (BR)CBO V (C = −10 mA) BC856, SBC856 Series −80 − − −50 − − BC857, SBC857 Series BC858 Series −30 − − Emitter−Base Breakdown Voltage V (BR)EBO V (E = −1.0 mA) BC856, SBC856 Series −5.0 − − BC857, SBC857
in „SunLike LEDs mit TRI-R-Technologie ( Seoul Semiconductors )“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HP-2900.pdf
Package Voltage Voltage Current Current tance 5082- Outline V (V) V (mV) I (mA) I (nA) at V (V) C (pF) BR F F R R T 2303 15 20 400 35 500 15 1.0 2900 15 10 400 20 100 5 1.2 Test IR = 10 A F = 1 mA VR= 0 V Conditions f =1.0 MHz Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured
in „Ostern- Vielleicht mal wieder Detektorempfänger ?“ · HF, Funk und Felder ·
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PDF
Mosfet_-_ti_-_csd19536kcs_TO220.pdf
127 A, L = 0.1 mH,GR = 25 Ω Source (Pin 3) (1) Max R θJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1% . . . R DS(on) vs V GS Gate Charge ) 10 10 9 TC= 25°C,ID= 100A ) 9 D = 100A ( TC= 125°C,ID= 100A ( VDS= 50V e 8 g 8 n l t 7 V 7 s 6 e 6 R u t 5 o 5 t o - 4 - 4 O 3 a 3 - G o 2 S 2
in „MOSFET CSD19536KCS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PZTA42T1-D.PDF
Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (C = 1.0 mAdc,BI = 0) 300 − Collector-Base Breakdown Voltage V(BR)CBO Vdc (C = 100 mAdc,EI = 0) 300 − Emitter-Base Breakdown Voltage V(BR)EBO Vdc (I = 100 mAdc, I = 0) 6.0 − E C Collector-Base
in „Unbekanntes Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
smlvt3v3.pdf
(j-l)Junction to leads 20 °C/W R th (j-a)Junction to ambient on printed circuit on recommended pad 100 °C/W layout August 2001 - Ed : 2 1/4 SMLVT3V3 ELECTRICAL CHARACTERISTICS (T amb= 25°C) Symbol Parameter I I VRM Stand-off voltage. F VBR Breakdown voltage. VCL VBR VCL Clamping voltage. VRM V F V IRM
in „3,3V Surpressor-Dioden“ · Mikrocontroller und Digitale Elektronik ·
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PDF
txs0104e.pdf
PW 14 2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM no Sb/Br) TXS0104ERGYR ACTIVE QFN RGY 14 1000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR no Sb/Br) TXS0104ERGYRG4 ACTIVE QFN RGY 14 1000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR no Sb/Br) TXS0104EYZTR ACTIVE
in „TXS0104E LevelShifter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1-bsp171.pdf
-1 V DS = -60 V, VGS = 0 V, j = 125 °C - -10 -100 Gate-source leakage current I nA GSS V GS = -20 V, VDS = 0 V - -10 -100 Drain-Source on-state resistance R DS(on) V GS = -10 V, D = -1.7 A - 0.22 0.35 Semiconductor Group 2 18/02/1997 BSP 171 Electrical
in „High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BC517.pdf
Conditions Min. Max Units Off Characteristics V Collector-Emitter Breakdown Voltage *I = 2.0mA, I = 0 30 V (BR)CEO C B V(BR)CBO Collector-Base Breakdown Voltage IC= 10µA, E = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100nA, C = 0 10 V I Collector Cut-off Current V = 30V, I = 0 100 nA CBO CB E On Characteristics
in „Widerstand Transistor“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
z1.html
="ZD.change_z3(this.value)"> <label id='txtz3'>14</label><br/> <svg xmlns="http://www.w3.org/2000/svg" version="1.1" width="100%" height="100%" viewbox="0 0 400 400" xxstyle="left:0px;top:0px;xxposition:relative;width:100%;height:100%" > <style> marker { xfill
in „Wechselstrom Paradoxon“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Zeigerdiagramm.txt
="ZD.change_z3(this.value)"> <label id='txtz3'>14</label><br/> <svg xmlns="http://www.w3.org/2000/svg" version="1.1" width="100%" height="100%" viewbox="0 0 400 400" xxstyle="left:0px;top:0px;xxposition:relative;width:100%;height:100%" > <style> marker { xfill
in „Röhrenamp: Snubber für Standby Schalter?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Zeigerdiagramm_komplex.html
="ZD.change_z3(this.value)"> <label id='txtz3'>14</label><br/> <svg xmlns="http://www.w3.org/2000/svg" version="1.1" width="100%" height="100%" viewbox="0 0 400 400" xxstyle="left:0px;top:0px;xxposition:relative;width:100%;height:100%" > <style> marker { xfill
in „3 Phasen + Neutral = Leitungsdurchmesser ?“ · Haus & Smart Home ·
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Datei
Zeigerdiagramm_komplex.html
="ZD.change_z3(this.value)"> <label id='txtz3'>14</label><br/> <svg xmlns="http://www.w3.org/2000/svg" version="1.1" width="100%" height="100%" viewbox="0 0 400 400" xxstyle="left:0px;top:0px;xxposition:relative;width:100%;height:100%" > <style> marker { xfill
in „Kabellänge und Verkabelung bei Partys und Co.“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Zeigerdiagramm_komplex.txt
="ZD.change_z3(this.value)"> <label id='txtz3'>14</label><br/> <svg xmlns="http://www.w3.org/2000/svg" version="1.1" width="100%" height="100%" viewbox="0 0 400 400" xxstyle="left:0px;top:0px;xxposition:relative;width:100%;height:100%" > <style> marker { xfill
in „2 Trenntrafos 230V - angeschlossen über 2 verschiedene Phasen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tle2426-q1.pdf
vs vs OUTPUT CURRENT FREQUENCY 200 100 V = 5 V or 12 V V I 5 V I 150 TA= 25°C O = 0 TA= 25°C µ 10 100 Ω n − i c l 50 n 1 u d e p R 0 TYP I g t l p 0.1 o −50 u t O p −o u −100 z O 0.01 −150 0.001 −200 −20 −10 0 10 20 10 100 1 k 10 k 100 k
in „Möglichst genaue Spannungshalbierung mit OP?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
readme_eclipse.html
argument to Eclipse at startup. An example of its content is presented below:</p> <code>-showsplash<br/> org.eclipse.platform<br/> --launcher.XXMaxPermSize<br/> 256m<br/> -vm<br/> /opt/sun-jdk-1.6.0.02/bin/java<br/> -vmargs<br/> -Xms40m<br/> -Xmx512m</code> <p>Note that every argument must be on its own
in „HILFE BEI INSTALLIERN EINES PROGRAMMS“ · PC Hard- und Software ·
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PDF
techb_myethernet_de_en.pdf
null);} catch(e){} } </script> </head> <body onLoad="onloadDo();"> <b>myEthernet - Status-LEDs</b><br><br> <a href="javascript:switchLED(20);" style="padding:4px;">Grün</a> <a href="javascript:switchLED(21);" style="padding:4px;">Rot</a><br><br> <div id="out"></div> </body> </html> Mit diesem komplexen
in „Ulrich Radigs TCP/IP Stack auf MyAvr, ENC startet immer neu, Soft Spi Problem“ · Mikrocontroller und Digitale Elektronik ·
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Bild
PCB-Layout eines STM32-Mikrocontrollers
+V, D+, Id, GND, 22, 100n, +3.3V, br1, swdio, swclk, 1.5k, STM32F, 072, br2, 100n, 8MHz, 22p, 22k, vbat, JP2, 100n, 22k, 180, 100n, +3.3V, GND
in „USB Problem bei STM32F072C8“ · Mikrocontroller und Digitale Elektronik · · Layouts
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PDF
Guide_to_PSoC_USB_I2C_C_2008.pdf
object sender, PaintEventArgs e) { Graphics g = e.Graphics; Font fn = new Font("Verdana", 12); Brush br = new SolidBrush(Color.Blue); int n; for (n = 0; n < n_data; n++) g.DrawString(n.ToString() + ": " + data_bytes[n].ToString(), fn, br, 10 + (n / 21) * 100, ((n % 21) * 30) + 30); timer1.Enabled = true
in „PSoC FirstTouch Starter Kit und C#“ · Softwareentwicklung ·
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PDF
rf_symbols_and_terminology.pdf
point and frequency VDS Drain–source voltage V |y21s| Short–circuit forward admittance in a source (BR)DS configuration at a given operating point and Drain–source breakdown voltage frequency V Emitter–base voltage with open collector EBO yo Short–circuit output admittance V(BR)EBO y Short–circuit output
in „Transistorparameter Erklärung“ · Analoge Elektronik und Schaltungstechnik ·
