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Datei
board-samtux.c
CONFIG_MMC_AT91) { /* DataFlash chip */ .modalias = "mtd_dataflash", .chip_select = 1, .max_speed_hz = 33 * 1000 * 1000, .bus_num = 0, }, #if defined(CONFIG_MTD_AT91_DATAFLASH_CARD) { /* DataFlash card */ .modalias = "mtd_dataflash", .chip_select = 0, .max_speed_hz = 15 * 1000 * 1000, .bus_num = 0, }, #endif #
in „Start-Hilfe zu buildroot für AT91RM9200 auch hier?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HOA1405_1.pdf
Reflective Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_074.ds4 100 100 90 A Pulsed s m 80 µ t 70 condition e e 60 T = 80°C i r A t c 50 s 10 d 40 T A 25°C o a 30 s r e F 20 TA= -40°C R 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000
in „Schlechte Signale mit CNY 70“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HOA1405_1.pdf
Reflective Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_074.ds4 100 100 90 A Pulsed s m 80 µ t 70 condition e e 60 T = 80°C i r A t c 50 s 10 d 40 T A 25°C o a 30 s r e F 20 TA= -40°C R 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000
in „Minimalbestromung CNY70 Reflexkoppler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HOA1405_1.pdf
Reflective Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_074.ds4 100 100 90 A Pulsed s m 80 µ t 70 condition e e 60 T = 80°C i r A t c 50 s 10 d 40 T A 25°C o a 30 s r e F 20 TA= -40°C R 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000
in „Algorithmus für Linefollower mit 5 Sensoren“ · Mikrocontroller und Digitale Elektronik ·
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Datei
BME280.c
be corrected to sea level (NN) by: P(NN) = P + Elevation in m / 7.6 Example: Measured pressure P = 1000 hPa Elevation = 440 m P(NN) = 1000 + 440 / 7.6 = 1058 hPa Code based on calibration algorithm provided by Bosch documentation: BST-BME280-DS001-23 Revision_1.23_012022 on page 25 Output parameters:
in „BME280 Sensor - Code für ATmega328 in C“ · Projekte & Code ·
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IPP120P04.pdf
Safe operating area 4 Max. transient thermal impedance I = f(V ); T = 25 °C; D = 0; SMD Z = f(t ) D DS C thJC p parameter: t p parameter: D=t /Tp 1000 101 1 µs 10 µs 100 100 µs 100 0.5 1 ms ] ] / [ [ 10-1 0.1 - J t Z 0.05 10 10-2 0.01 single pulse -3 1 10 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100
in „Highside, FET wird heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS1307.pdf
32.768kHz Crystal Connection V - +3V Battery Input BAT GND - Ground ORDERING INFORMATION SDA - Serial Data DS1307 8-Pin DIP (300-mil) SCL - Serial Clock DS1307Z 8-Pin SOIC (150-mil) SQW/OUT - Square Wave/Output Driver DS1307N 8-Pin DIP (Industrial) DS1307ZN 8-Pin SOIC (Industrial) DESCRIPTION The DS1307 Serial
in „Real-Time Clock (ds1307)“ · Mikrocontroller und Digitale Elektronik ·
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APM2601.pdf
Symbol Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BV DSS V GSV , I DS250µA -20 V Voltage Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.45 -1.2 V I Gate Leakage Current V =±8V , V =0V ±100 nA GSS GS DS Drain-Source On-state V GS4.5V , IDS-3A 80 100 RDS(ON) mΩ Resistance V GS-2.5V , DS=-2A 110 135 V SD Diode Forward Voltage ISD-1.25A , VGS0V -0.7 -1.3 V b Dynamic Q Total Gate Charge V =-10V , I =-1A g DS DS 6.4 8 Qgs Gate-Source Charge V GS=-4.5V 1 nC Qgd Gate-Drain Charge 1.8 t Turn-on
in „SMD-Bauteilbestimmung“ · Mikrocontroller und Digitale Elektronik ·
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FCPF11N60B.pdf
nA I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA GSSR GS DS On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, D = 250 µA 3.0 -- 5.0 V R Static Drain-Source DS(on) V GS = 10 V,DI = 5.5 A -- 0.32 0.38 Ω On-Resistance gFS Forward Transconductance V DS
in „Kühlkörper Dimensionieren“ · Mikrocontroller und Digitale Elektronik ·
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Regler_LM3488.pdf
parameters for selection of a MOSFET are: 1. Minimum threshold voltage, V (MTH) 2. On-resistance, R (DS) 3. Total gate charge, Q g 4. Reverse transfer capacitance, C RSS 5. Maximum drain to source voltage, V DS(MAX) The off-state voltage of the MOSFET is approximately equal to the output voltage. V DS(
in „Kein PWM-Signal bei DC-DC Wandler; 12->140V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3231.pdf
+ write bit, the master transmits a word ter pointer. The DS3231 must receive a not acknowl- address to the DS3231. This sets the register pointer edge to end a read. on the DS3231, with the DS3231 acknowledging the Maxim Integrated │ 17 www.maximintegrated.com
in „DS3231 vs PCF8573, hilfe gesucht !“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_SJEP120R100_rev2.1.pdf
Parameter Symbol Conditions Unit Min Typ Max Off Characteristics Drain-Source Blocking Voltage BV DS V GS= 0 V, ID= 600 µA 1200 - - V V = 1200 V, V = 0 V, Tj = 25 C - 100 600 DS GS o V DS = 1200 V, VGS = 0 V, Tj = 150 C - 300 - VDS = 1200 V, VGS < -15 V, Total Drain Leakage Current IDSS o - 1 - µA Tj
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3231_DATASHEET.pdf
Additionally, the RST pin is monitored as a MARK pushbutton input for generating a reset externally. DS3231S 0°C to +70°C 16 SO DS3231 Applications DS3231SN -40°C to +85°C 16 SO DS3231N DS3231S# 0°C to +70°C 16 SO DS3231S Servers Utility Power Meters DS3231SN# -40°C to +85°C 16 SO DS3231SN Telematics GPS
in „RTC DS3231 Pull Up Widerstände berechnen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP3221.pdf
(0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091 2003 Microchip Technology Inc. DS21732B-page 21 MCP3221 NOTES: DS21732B-page 22 2003 Microchip Technology Inc. MCP3221 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory
in „Suche Bauteilbezeichnung 5-Pin SOT-23 mit "S1SD" Marking“ · Mikrocontroller und Digitale Elektronik ·
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8020_8021_Users_Manual.pdf
1000-00300 Q6 TSTR2N4403 0400-01800 DS7 LEDREDMV57124-18G.I 1000-00700 Q7 TSTR2N4403 0400-01800 DS8 LEDREDMV57124-18G.I 1000-00700 Q8 TSTR2N4403 0400-01800 DS9 LEDREDMV57124-18G.I 1000-00700 DS10 LEDREDMV57124-18G.I 1000-00700 R1 RESCOMP220 0100-02210 DS11 3MMLEDRED5082-4480 1000-00300 R2 RESCOMP220 0100-02210 DS12 LEDREDMV57124-18G.I 1000-00700 R3 RESCOMP220 0100-02210 DS13 LEDREDMV57124-18G.I 1000-00700 R4 RESCOMP220
in „Handbuch für Funktionsgenerator Kontron 8021 gesucht“ · Offtopic ·
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PDF
VMM1500-0075P.pdf
cells IDSS VDS = VDSS;VGS= 0 V; TVJ 25°C 0.15 mA T VJ125°C 1.5 mA I V = ±20 V; V = 0 V 1.5 µA GSS GS DS Q 2480 nC g V = 10 V; V = 60 V; I = 500 A Q gs GS DS D 330 nC Q gd 940 nC td(on) 60 ns t V = 10 V; V = 30 V; 170 ns r GS DS td(off) ID= 250 A; R G 1 Ω 320 ns tf 200 ns VF (diode) I = 750 A;VGS = 0 V 1.2 1.6 V F t (diode) I = 200 A;-di/dt = 1000 A/µs; V= 30 V 90 ns rr F DS R 0.06 K/W thJC R thJS with heat transfer paste 0.12 K/W ① additional current limitation by external leads 1 IXYS reserves the right to change limits, test conditions and
in „Impulsströme“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS154_Bridgelux_Vesta_Series_Tunable_White_Linear_Data_Sheet_20171002_Rev_A.pdf
Current c(V) c(W) (lm/W) T c25°C (lm) (mA) (lm) 2700 90 500 24.8 12.4 129 1596 1484 BXEB-TL-2750G-1000-A-13 5000 90 500 24.8 12.4 135 1676 1596 2700 90 1000 24.8 24.8 129 3192 2969 BXEB-TL-2750G-3000-A-13 5000 90 1000 24.8 24.8 135 3352 3192 Notes for Table 1: 1. Nominal CCT as defined by ANSI C78.377
in „Led Module in Reihe (Steuerung mit ZigBee) Berechnung Vorwiderstand“ · Mikrocontroller und Digitale Elektronik ·
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NTE2399.pdf
Symbol Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0V,DI = 250 A 1000 − − V Breakdown Voltage Temp. CoefficienV (BR)DSSReference to +25 CD I = 1mA − 1.4 − V/ C T J Static Drain−to−Source On−ResistanReDS(on) VGS = 10V,DI = 1.9A, Note 4 − − 0.50 Gate Threshold Voltage VGS
in „Kühlkörper eines NTE2399 berechnen“ · Analoge Elektronik und Schaltungstechnik ·
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mt9v403_ds.pdf
Showing a Read from Register 9; Returned Value is 642 SCLK SDATA B8b ADDR Reg0x09 B9h ADDR 0000 0010 1000 0010 STOP START ACK ACK ACK ACK NACK 09005aef80c07280 Micron Technology, Inc., reserves the right to change products or specifications without notice. MT9V403_DS.fm - Rev. B 1/04 EN 14 ©2004 Micron
in „Wer hat Interesse an CMOS Bildsensoren?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
pic16f88.pdf
be found Program 07FFh in the “PICmicro Mid-Range MCU Family Reference Memory 0800h Page 1 Manual” (DS33023). 0FFFh 2.1 Program Memory Organization 1000h The PIC16F87/88 devices have a 13-bit program Wraps to counter capable of addressing an 8K x 14 program 0000h-03FFh memory space. For the PIC16F87/88
in „auftrennen einer 2stelligen Dezimalzahl in asm (pic 16f88)“ · Mikrocontroller und Digitale Elektronik ·
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DS3231.pdf
DS3231 Extremely Accurate I C-Integrated 2 RTC/TCXO/Crystal General Description Benefits and Features 2 The DS3231 is a low-cost, extremely accurate I C ●● Highly Accurate RTC Completely Manages All real-time
in „18650 Zelle zu 5V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3231_S_SN_Crystal.pdf
DS3231 Extremely Accurate I C-Integrated 2 RTC/TCXO/Crystal General Description Benefits and Features 2 The DS3231 is a low-cost, extremely accurate I C ●● Highly Accurate RTC Completely Manages All real-time
in „(empfindlicher) GPS Modul gesucht“ · Mikrocontroller und Digitale Elektronik ·
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604551.pdf
DS 75 DSI 75 DSA 75 DSAI 75 Rectifier Diode V RRM = 800-1800 V Avalanche Diode IF(RMS) = 160 A I = 110 A F(AV)M DO-203 AB VRSM V(BR)min V RRM Anode Cathode V V V on stud on stud C A DS DSI 900 - 800 DS75
in „Kühlkörper für Gleichrichterdiode“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
nTransiver24.c
runden #define BAUD_REAL (F_CPU/(16*(UBRR_VAL+1))) // Reale Baudrate #define BAUD_ERROR ((BAUD_REAL*1000)/BAUD) // Fehler in Promille, 1000 = kein Fehler. #if ((BAUD_ERROR<990) || (BAUD_ERROR>1010)) #error Systematischer Fehler der Baudrate groesser 1% und damit zu hoch! #endif #include <avr/io.h> #include
in „NRF24L01 und Atmega328P“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Thermometer_mit_3_RundanzeigenV2.1.bas
'************************************************* '* Thermometer,Anzeige mit Schrittmotoren '* DS18S20 als Temperatursensor '************************************************* 'V2.0 'Verbesserungen: 'Beschleunigung und Verzögerung eingebaut 'Variablen optimiert 'DuoLed aktiviert 'V2.1 '2 Sensoren
in „Atmega8 Thermometer mit Schrittmotoranzeige“ · Projekte & Code ·
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PDF
datasheet.pdf
Channel Channel V BVGSS IG= – 1.0 µA – 20 – 50 – 30 – 50 Min I V = ( ), V = Ø nA 0.10 1.0 1.0 1.0 GSS GS DS Max (–10 V) (–30 V) (–10 V) (–30 V) V V = ( ), I = 1.0 nA V –0.5/–6.0 –0.4/–5.0 –0.4/–5.0 –0.25/–4.5 GS(off) DS D Min/Max (10 V) (15 V) (10 V) (5.0 V) mA 0.3/6.5 0.6/6.5 0.3/1.4 0.5/12 DSS VDS = ( ),
in „Suche Transistor“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
564932.pdf
–30 — — V ID= –10 mA, V GS = 0 voltage Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 A, V DS0 voltage Gate to source leak current I — — ±10 A V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –100 A V = –25 V, V = 0 DSS DS GS Gate to source cutoff voltage VGS(off) –1.0 — –2.5
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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Programmierkurs.pdf
eine Vorlage, und mache aus dieser ein konkretes Objekt. Ich könnte von der Vorlage auch 100e oder 1000e Objekte machen. Man spricht dann von 100 oder 1000 Instanzen. Alle würden sich durch die Werte der Eigenschaften voneinander unterscheiden. Beispielsweise könnte bei einem die Zahl 3 sein, bei einem
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Datei
Clockplot_ino.ino
right servos // - added code to support DS1307, DS1337 and DS3231 real time clock chips // - see http://www.pjrc.com/teensy/td_libs_DS1307RTC.html for how to hook up the real time clock // delete or mark the next line as comment if you don't
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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Datei
plotclock.c
right servos // - added code to support DS1307, DS1337 and DS3231 real time clock chips // - see http://www.pjrc.com/teensy/td_libs_DS1307RTC.html for how to hook up the real time clock // delete or mark the next line as comment if you don't
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
A100_IRF7413_IR.pdf
Vs. Temperature www.irf.com 3 IRF7413PbF 3200 20 VGS = 0V, f = 1MHz ID = 7.3A Ciss = Cgs + Cgd, C ds SHORTED ▯V = 24V 2800 Crss = Cgd ) DS C▯iss C = C + C ( ▯VDS = 15V oss ds gd g16 ) 2400 t p o ( 2000 C▯oss V c c12 a u c 1600 o a - a - 8 C 1200 t C a C▯rss , 800 S VG4 400 FOR TEST CIRCUIT▯ SEE FIGURE 9 0 A 0 A 1 10 100 0 10 20 30 40 50 60 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY RDS(on) ( t e TJ= 25°C ) r ( C TJ= 150°C t100
in „MOSFET - Verständnisfrage“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
RFM70_HH.c
, RX_ptr,0); status = SPI_send_get(FLUSH_TX, TX_ptr, RX_ptr,0); status |= STATUS_RX_DR | STATUS_TX_DS | STATUS_MAX_RT; // clear RX_DR or TX_DS or MAX_RT interrupt flag SPI_send_get(WRITE_REG|STATUS, &status, RX_ptr,1); // update status reg RFM70_disable; if (mode) status = MASK_RX_DR | EN_CRC | CRCO | PWR_UP; // Tx config register else status = MASK_TX_DS | MASK_MAX_TR | EN_CRC | CRCO | PWR_UP | PRIM_RX; // Rx config register SPI_send_get(WRITE_REG|CONFIG, &status, RX_ptr,1); RFM70_enable; } /************************************************** Function
in „RFM70 Funkmodul arbeitet unzuverlässig“ · Mikrocontroller und Digitale Elektronik ·
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PDF
704013.pdf
weiß grau weiß grau Entfernung [mm] 90% Remission 18% Remission 90% Remission 18% Remission 200...1000 10 mm 15 mm ±15 mm ±18 mm 1000...2000 11 mm 20 mm ±15 mm ±20 mm 2000...4000 35 mm 45 mm ±25 mm ±32 mm 4000...6000 55 mm 80 mm ±35 mm ±50 mm 6000...10000 120 mm ±70 mm H Tastweite auf Schwarz (6 % Remission
in „Efector Pmd, Datenblatt??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUK7514-55A.pdf
breakdown V GS = 0 V; D = 0.25 mA; 55 - - V voltage T = -55˚C 50 - - V j V GS(TO) Gate threshold voltage V DS= V GSI D 1 mA 2 3 4 V Tj= 175˚C 1 - - V T j -55˚C - - 4.4 V IDSS Zero gate voltage drain current V DS= 55 V; V GS= 0 V; - 0.05 10 µA T = 175˚C - - 500 µA j IGSS Gate source leakage current V GS = ±20
in „Wärmewiderstandsberechnung FET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUK_7514-55.pdf
breakdown V GS = 0 V; D = 0.25 mA; 55 - - V voltage T = -55˚C 50 - - V j V GS(TO) Gate threshold voltage V DS= V GSI D 1 mA 2 3 4 V Tj= 175˚C 1 - - V T j -55˚C - - 4.4 V IDSS Zero gate voltage drain current V DS= 55 V; V GS= 0 V; - 0.05 10 µA T = 175˚C - - 500 µA j IGSS Gate source leakage current V GS = ±20
in „Brauche Hilfe bei Motoransteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP450B-1.pdf
Breakdown Voltage Temperature I = 250 µA, Referenced to 25°C / ∆T Coefficient D -- 0.55 -- V/°C J DSS V DS = 500 V, GS = 0 V -- -- 10 µA Zero Gate Voltage Drain Current V DS = 400 V, C = 125°C -- -- 100 µA GSSF Gate-Body Leakage Current, Forward V GS = 30 V, DS = 0 V -- -- 100 nA GSSR Gate-Body Leakage Current
in „Suche IRFP 450B“ · Markt ·
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PDF
csd18502kcs.pdf
BVDSS Drain to Source Voltage VGS = 0V,DI = 250μA 40 V DSS Drain to Source Leakage Current VGS = 0V, DS = 32V 1 μA I Gate to Source Leakage Current V = 0V, V = 20V 100 nA GSS DS GS VGS(th) Gate to Source Threshold Voltage VDS= V GS,DI = 250μA 1.5 1.8 2.1 V VGS = 4.5V,DI = 100A 3.3 4.3 mΩ RDS(on) Drain
in „Netzteil: 2 Mosfets parallel OK?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_Texas_Instruments.pdf
, L = 0.1 mHG R = 25 Ω 156 mJ (1) Max R θJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. R DS(on) vs V GS Gate Charge 10 10 ) 9 T C 25°C, ID = 100 A 9 ID= 100 A : T C 125°C, ID = 100 A V V DS= 20 V ( 8 e 8 c a a 7 o 7 i V e 6 c 6 R u a 5 S 5 S 4 t 4 n t - 3 a 3 n - S 2 S 2 D V R 1 1 0 0 0 2 4
in „Übertragung eines Pspice-Makromodells(OpV) in LTSpice“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Tabellarische Auflistung von elektronischen Bauteilen und Funktionen
BD365 Leistungstransistor 60V/3A/28W 1 BDY13 2 BU2611A BU2611A PLL frequency synthesizer for tuner 4 DS1000-50 DS1000 Leistungstransistor 40V/3A/12W 1 GD160 1 GD170 1 GD180 18 HYB51000A-70 HYB51000A-70 1M1 DRAM Low Power 2 IAM3378 1 IAM3318 1 KIA2288P KIA7288P BIPOLAR INTEGRATED CIRCUIT (BI-DIRECTIONAL
in „[V] Konvolut Halbleiter 1950-heute Ost+West“ · Markt · · Screenshots
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PDF
Datasheet__ICM-20948_.pdf
24 Figure 14. Package Dimensions Document Number: DS-000189 Page 84 of 89 Revision: 1.3 ICM-20948 DIMENSIONS IN MILLIMETERS SYMBOLS MIN. NOM. MAX. A 0.95 1.00 1.05 A1 0.00 0.02 0.05 b 0.15 0.20 0.25 c --- 0.15 REF. --- D 2.90 3.00 3.10 D2 1.65 1.70 1.75
in „20948 I2C <-> SPI?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
22070a-53890.pdf
mV p-p t -70.0 C =0 μF o 100.00 IN h -80.0 IOUT10 mA S 0.00 -90.0 0 1 2 3 4 5 6 0.01 0.1 1 10 100 1000 Input Voltage (V) Frequency (kHz) FIGURE 2-21: Short Circuit Current vs. FIGURE 2-24: Power Supply Ripple Input Voltage. Rejection (PSRR) vs. Frequency. DS22070A-page 14 © 2007 Microchip Technology
in „[V] 50St.LowNoise Microchip LDO MCP1824T 3,3V/300mA SOT223-5 mit Shutdown“ · Markt ·
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PDF
BS170_2N7000.pdf
N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected: 2000 V V DS (V) rDS(on) (W) V GS(th)(V) D (A) 2 @ V = 10 V 0.47 APPLICATIONS 60 GS 1.0 to 2.5 4 @ VGS = 4.5 V 0.33 D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps
in „(Mosfet-) Alternative zu ULN2003“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FDC638P-D.PDF
Voltage V DS = VGS ID= –250 μA –0.4 –0.8 –1.5 V ΔV GS(th) Gate Threshold Voltage ID= –250 μA,Referenced to 25°C 3 mV/°C ΔT J Temperature Coefficient R Static Drain–Source 39 48 DS(on) V GS = –4.5 V, ID= –4.5 A mΩ
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BTS141_DS_14.pdf
500 V IN= 10 V Input current - after thermal shutdown, D =0 A: IN(3) 1000 2500 4000 V = 10 V IN Input holding current after thermal shutdown 1) IN(H) T j= 25 °C 500 - - T = 150 °C 300 - - j On-state resistance R mΩ DS(on) V IN= 5 V, ID= 12 A, T j 25 °C - 31 34 V IN= 5 V,
in „BTS141 - welcher Pin ist mit dem Gehäuse verbunden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STP6NK90ZFP.pdf
™ Power MOSFET 2 in D PAK, TO-220, TO-220FP and TO-247 packages TAB Features TAB 1 3 Order codes V DS R DS(on)ax. D D PAK 3 TO-220 1 2 STB6NK90ZT4 STP6NK90Z 900 V 2 Ω 5.8 A STP6NK90ZFP 23 3 STW7NK90Z 1 2 TO-220FP TO-247 1 • Extremely high dv/dt capability D(2, TAB) • 100% avalanche tested • Gate charge
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PDF
STP6NK90ZFP.pdf
™ Power MOSFET 2 in D PAK, TO-220, TO-220FP and TO-247 packages TAB Features TAB 1 3 Order codes V DS R DS(on)ax. D D PAK 3 TO-220 1 2 STB6NK90ZT4 STP6NK90Z 900 V 2 Ω 5.8 A STP6NK90ZFP 23 3 STW7NK90Z 1 2 TO-220FP TO-247 1 • Extremely high dv/dt capability D(2, TAB) • 100% avalanche tested • Gate charge
in „Unterschiedliche Power MOSFET kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Si2303.pdf
Drain-Source Breakdown Voltage V (BR)DSS V GS= 0 V, D = - 10 µA - 30 V Gate-Threshold Voltage V GS(th) V DS= V GS, D = - 250 µA - 1.0 - 3.0 Gate-Body Leakage IGSS V DS = 0 V, GS = ± 20 V ± 100 nA V = - 30 V, V = 0 V Zero Gate Voltage Drain Current I DS GS - 1 µA DSS VDS = - 30 V,GS = 0 V, J = 55 °C - 10 On-State Drain Current ID(on) V DS≤ - 5 V, GS = - 10 V - 6 A V GS = - 10 VD I = - 1.7 A 0.150 0.200 Drain-Source On-Resistance a R DS(on) Ω VGS = - 4.5 V,DI = - 1.3 A 0.285 0.380 a g V = - 5 V, I = - 1.7 A Forward Transconductance fs
in „Highside-Switch gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STB10NK60Z.pdf
= 0) VDS = Max Rating, µA GS 50 I Gate Body Leakage Current V = ±15V, V = 0 ±10 µA GSS (VDS= 0) GS DS V Gate Threshold Voltage V = V , I = 250 µA 3 3.75 4.5 V GS(th) DS GS D Static Drain-Source On RDS(on) VGS = 10 V,DI = 20 A 0.65 0.75 Ω Resistance Table 6. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfsNote 4 Forward Transconductance V DS=15V, D = 4.5A 7.8 S Ciss Input Capacitance 1370 pF C oss Output Capacitance V DS=25V, f=1 MHz, GS =0 156 pF Reverse Transfer Capacitance 37 pF C rss Coss eq. Note 5 Equivalent Ouput Capacitance GS=0,
in „Ersatz für STB10NK60Z“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CPC1981Y.pdf
CPC1981Y 1000V, 0.18A rms Single-Pole INTEGRATED C IRCUITS D IVISION Normally Open Power SIP Relay Parameter Rating Units Description BlockingVoltage 1000 VP IXYS Integrated Circuits brings OptoMOS technology, Load
in „Welches SSR für Zündunterbrecher bzw. Alternativen zum SSR?“ · Analoge Elektronik und Schaltungstechnik ·
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BUZ71.pdf
= 0V 50 - - V DSS D GS Gate to Threshold Voltage V V = V , I = 1mA (Figure 9) 2.1 3 4 V GS(TH) GS DS D Zero Gate Voltage Drain Current I T = 25 C, V = 50V, V = 0V - 20 250 µA DSS J DS GS TJ= 125 C, V DS = 50V, GS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
in „BUZ 71 Wie anschliessen?“ · Mikrocontroller und Digitale Elektronik ·
