-
PDF
MBI5039_Preliminary_Datasheet_V1.01-English.pdf
5~0 Current gain 000000 ~ 6’b101011 (Default): allow 64-step programmable current 111111 gain from 12.5 % to 200% *Configuration register=11: when bothDD =5V and in the in-message error detection mode, SD,TH0.73x V +0.4V. In other conditions, V is 0.73xV DD DS,TH DD. - 19 - March 2008, V1.01 MBI5039
in „LED-Treiber-IC mit möglichst vielen Ausgängen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
93LC66.pdf
Instruction SB Opcode Address Data In Data Out Cycles ERASE 1 11 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 12 ERAL 1 00 1 0 X X X X X X X — (RDY/BSY) 12 EWDS 1 00 0 0 X X X X X X X — HIGH-Z 12 EWEN 1 00 1 1 X X X X X X X — HIGH-Z 12 READ 1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 – D0 20 WRITE 1 01 A8 A7 A6 A5 A4
-
PDF
MCP73831.pdf
C SD Die Temperature TSDHYS — 10 — °C Hysteresis Note 1: Not production tested. Ensured by design. DS21984A-page 4 © 2005 Microchip Technology Inc. MCP73831 AC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits aDDl= [VREG (typ.) + 0.3V] to 12V, T = -40°C to +85°C. Typical
in „Akku Ladetechnik“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MCP73811_2.pdf
open-drain output on the MCP73832. the other side of the PCB. 2005-2013 Microchip Technology Inc. DS20001984F-page 11 MCP73831/2 NOTES: DS20001984F-page 12 2005-2013 Microchip Technology Inc. MCP73831/2 4.0 DEVICE OVERVIEW The MCP73831/2 are highly advanced linear charge The UVLO circuit places the
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MCP_73831.pdf
open-drain output on the MCP73832. the other side of the PCB. 2005-2013 Microchip Technology Inc. DS20001984F-page 11 MCP73831/2 NOTES: DS20001984F-page 12 2005-2013 Microchip Technology Inc. MCP73831/2 4.0 DEVICE OVERVIEW The MCP73831/2 are highly advanced linear charge The UVLO circuit places the
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BST-BMP180-DS000-09-2.pdf
of output data temperature 0.1 °C Noise in pressure see table on page 12-13 Absolute accuracy @ 25 °C -1.5 ±0.5 +1.5 °C temperature VDD = 3.3V 0 . . . +65 °C -2.0 ±1.0 +2.0 °C 1 at 85°C BST-BMP180-DS000-09 | Revision 2.5 | April 2013 Bosch Sensortec © Bosch Sensortec GmbH
in „BMP180 Luftdruck Sensor“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
ZXLD1366.pdf
number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXLD1366 Application Information (cont.) TC< 70°C, LED = 1A 15 14 Legend 13 47µH 12 68µH s 11 D 100µH L 10 f
in „Spannungsteiler zwischen Arduino und KSQ“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
2097320.pdf
number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXLD1366 Application Information (cont.) TC< 70°C, LED = 1A 15 14 Legend 13 47µH 12 68µH s 11 D 100µH L 10 f
in „ZXLD1366 Beschaltung ADJ Pin“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irfp260n.pdf
28A Ciss= Cgs+ Cgd Cds SHORTED V VDS = 160V 7000 C = C ( VDS = 100V rss gd g VDS = 40V 6000 Coss = ds + gd l 12 F o ( Ciss V c5000 c a u c4000 S 8 p o a Coss - ,3000 t C G 2000 , 4 Crss S V 1000 0 0 0 50 100 150 200 1 10 100 1000 Q , Total Gate Charge (nC) V , Drain-to-Source Voltage (V) G DS Fig 5.
in „Strom bei 50 A begrenzen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IXTA-TP3N50D2_.pdf
ID(on) VGS = 0V, VDS= 25V, Note 1 3 A • Active Loads © 2009 IXYS CORPORATION, All Rights Reserved DS100148B(12/09) IXTA3N50D2 IXTP3N50D2 Symbol Test Conditions Characteristic Values TO-263 (IXTA) Outline (T J 25°C, Unless Otherwise Specified) Min. Typ. Max. g V = 30V, I = 1.5A, Note 1 1.3 2.1 S fs DS
in „J-FET N-Channel mit gößer 70V Drain / Source Spannung für Konstantstromsenke“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
P-MOSFETsi3445dv.pdf
V DS= - 10 V,DI = - 5.6 A 15 S a V I = - 1.7 A, V = 0 V Diode Forward Voltage SD S GS - 0.7 - 1.2 V b Dynamic Total Gate Charge Q g 15 25 Gate-Source Charge Qgs V DS= - 4 V, GS = - 4.5 VD I = - 5.6 A 3 nC
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
SCHEMATIC1___PAGE1.pdf
18 D12 R1 4k7 FREEZE 81 TSTME/TSC 141 RAMCS C3 C4 C5 A6 7 A4 DQ4 19 D13 VCC FREEZE/QUOT BR/CS0 VCC D9 10n 10n 10n A7 A5 DQ5 D14 RW 102 MODCLK CSBOOT DS1210 A8 6 A6 DQ6 20 D15 103 R/W CSBOOT 140 STBY A9 5 A7
in „Schaltung mit 68332“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irlml6401.pdf
Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (<1.1mm) V DSS = -12V l Available in Tape and Reel 3 D l Fast Switching R = 0.05Ω l 1.8V Gate Rated S 2 DS(on) Description These P-Channel MOSFETs from International Rectifier utilizeadvancedprocessingtechniquestoachieveextremely
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLML6401.pdf
Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (<1.1mm) V DSS = -12V l Available in Tape and Reel 3 D l Fast Switching R = 0.05Ω l 1.8V Gate Rated S 2 DS(on) Description These P-Channel MOSFETs from International Rectifier utilizeadvancedprocessingtechniquestoachieveextremely
in „parasitäres Glimmen beim LED-Muxing. Transistoren? Einstreuungen?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLML6401.pdf
Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (<1.1mm) V DSS = -12V l Available in Tape and Reel 3 D l Fast Switching R = 0.05Ω l 1.8V Gate Rated S 2 DS(on) Description These P-Channel MOSFETs from International Rectifier utilizeadvancedprocessingtechniquestoachieveextremely
in „LED Multiplexer glimmt“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
datenblatt_pic.pdf
Figure 2-2. 2: Maintain as clear for upward compatibility with future products. 3: Not implemented. DS35007B-page 12 2001 Microchip Technology Inc. PIC16F84A 3.0 DATA EEPROM MEMORY The EEPROM data memory allows byte read and write. A byte write automatically erases the location and The EEPROM data memory
in „Flußdiagramm Digitale stoppuhr auf PIC 16F84A“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
16F84.pdf
Figure 2-2. 2: Maintain as clear for upward compatibility with future products. 3: Not implemented. DS35007B-page 12 2001 Microchip Technology Inc. PIC16F84A 3.0 DATA EEPROM MEMORY The EEPROM data memory allows byte read and write. A byte write automatically erases the location and The EEPROM data memory
in „Probleme mit Taktversorgung auf Steckbrett“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Infineon_IRLB8721_DataSheet_v01_01_EN-3363432.pdf
On-Resistance vs. Temperature www.irf.com 3 IRLB8721PbF 10000 14 V GS = 0V, f = 1 MHZ ID= 25A C iss= gs + gd, dsSHORTED ) C = C ( 12 V DS= 24V rss gd g V = 15V ) C oss= ds + gd t DS F Ciss o 10 ( 1000 V c r 8 a Coss u c S a t 6 a Crss e , 100 a C , 4 S G V 2 0 10 1 10 100 0 4 8 12 16 20 24 28 V , Drain-to-Source
in „LED Ansteuerung für Lazertag Projekt“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
PIC_Applikationen.PDF
task 2. time3 ds 1 ; Timer for task 3. time4 ds 1 ; Timer for task 4. time5 ds 1 ; Timer for task 5. time6 ds 1 ; Timer for task 6. time7 ds 1 ; Timer for task 7. ; Remember to change device info if using a different
in „MATRIX-Tastatur“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IPB180P04P4.pdf
Drain-source breakdown voltage V (BR)DSSV GS=0V, ID= -1mA -40 - - V Gate threshold voltage V GS(th) V DS=V GS, D =-410µA -1.2 -1.7 -2.2 V DS=-32V, V GS=0V, Zero gate voltage drain current IDSS T =25°C - -0.1 -1 µA j V DS=-32V, V GS=0V, 2) - -20 -200 T j125°C I V =-16V, V =0V Gate-source leakage current
in „wie pMOSFET für Strombegrenzung kühlen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF-610-Datasheet.pdf
Zero Gate Voltage Drain Current DSS DS GS µA V DS = 160 V, VGS = 0 V, TJ= 125 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V ID= 2.0 A b - - 1.5 Ω Forward Transconductance g fs V DS= 50 V, ID= 2.0 Ab 0.8 - - S Dynamic Input
in „Schaltung für logic level to high voltage“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DS2438A.pdf
number has been entered, the shift register contains the CRC value. 1-WIRE CRC CODE Figure 4 11 of 29 DS2438 ROM FUNCTIONS FLOWCHART Figure 5 12 of 29 DS2438 MEMORY/CONTROL FUNCTIONS FLOWCHART Figure 6 NO YES 13 of 29 DS2438 MEMORY/CONTROL FUNCTIONS FLOWCHART Figure 6 (continued) MEMORY MAP The DS2438’s
in „DS2438 auslesen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Datasheet.pdf
Characteristics Transfer Characteristics 1 40 16 3 VGS(off)- 3.0 V VGS(off)- 1.6 V V = 15 V / A - 55°C A - 55°C DS ( 25°C ( M T30 125°C T12 25°C M N N 125°C R VGS(off)- 2.0 V R B R 125°C R F C20 25°C C 8 VGS(off)- 1.1 V J I - 55°C I 1 A A 125°C 1 D D 25°C 1 -10 VDS = 15 V - 4 - 55°C I D / I M 0 M 0 -1 -2 -3 0 0 -
in „Mal wieder: Was ist das für ein SMD?“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
test.ino.asm
irq_flag = irq_flag_e::end; } else { if (msg.reading) 394: 80 91 63 01 lds r24, 0x0163 ; 0x800163 <ds+0xa> 398: 88 23 and r24, r24 39a: 39 f0 breq .+14 ; 0x3aa <__vector_11+0x12e> irq_flag = irq_flag_e::read1; 39c: 83 e0 ldi r24, 0x03 ; 3 39e: 90 e0 ldi r25, 0x00 ; 0 3a0: 90 93 67 01 sts 0x0167, r25
in „Atmega328 1-Wire mit Timer CTC/PWM“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
mcp3424.pdf
Input Signal Frequency (Hz) FIGURE 2-8: IDDS vs. Temperature. FIGURE 2-11: Frequency Response. 14 12 V = 5.0V VDD= 5.5V DD 10 ) µ 8 ( V = 4.5V D 6 DD ID 4 2 VDD= 2.7V 0 -60 -40 -20 0 20 40 60 80 100 120 140 Temperature (°C) FIGURE 2-9: I vs. Temperature. DDB DS22088C-page 10 © 2009 Microchip Technology
in „Sensorplatine MPX4115 DS1621 HIH5030 - Schaltungskontrolle“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
SI7611.pdf
e t - 0.024 c O p - C 1200 n - S C D 0.021 R VGS = 10 V 600 C oss Crss 0.018 0 0 5 10 15 20 0 4 8 12 16 20 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.7 D = 9.3 A ) ( 8 VGS = 10 V,DI = 9.3 A e V = 20 V e 1.4 t DS n o t
in „gleichwertiger Ersatztyp für Mosfet gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
handbuch_tx-ds575x_manual_e.pdf
buttons [31] 8. EXIT/RETURN button [32] 7 18 9. PREV CH button [This button is not used for the TX-DS575X.] 8 17 10. TRACK button [32] 9 16 11. CD/TAPE/DVD/MD operation buttons [31~33] 10 15 12. Input Selector buttons [17] The V4 button is not used for the TX-DS575X. 11 13. Numeric key/STEREO/DSP ˆ ,
in „Verstärker ONKYO TX-DS 575 funktioniert nicht mehr richtig“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
L6203.pdf
TIMING Symbol Parameter Test Conditions Min. Typ. Max. Unit t1(Vi Source Current Turn-off Delay Fig. 12 300 ns t2(Vi Source Current Fall Time Fig. 12 200 ns t (V) Source Current Turn-on Delay Fig. 12 400 ns 3 i t4(Vi Source Current Rise Time Fig. 12 200 ns t5(Vi Sink Current Turn-off Delay Fig. 13 300
in „Schrittmotorsteuerung verbessern“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
cd00000089-1795323.pdf
TIMING Symbol Parameter Test Conditions Min. Typ. Max. Unit t1(Vi Source Current Turn-off Delay Fig. 12 300 ns t2(Vi Source Current Fall Time Fig. 12 200 ns t (V) Source Current Turn-on Delay Fig. 12 400 ns 3 i t4(Vi Source Current Rise Time Fig. 12 200 ns t5(Vi Sink Current Turn-off Delay Fig. 13 300
in „[V] Motortreiber 2x L6203 Multivatt11 und 5x Siemens TLE4205“ · Markt ·
-
PDF
cd00000089-1795323.pdf
TIMING Symbol Parameter Test Conditions Min. Typ. Max. Unit t1(Vi Source Current Turn-off Delay Fig. 12 300 ns t2(Vi Source Current Fall Time Fig. 12 200 ns t (V) Source Current Turn-on Delay Fig. 12 400 ns 3 i t4(Vi Source Current Rise Time Fig. 12 200 ns t5(Vi Sink Current Turn-off Delay Fig. 13 300
in „[V] 2St. DMOS Full Bridge L6203 Multiwatt 11 Gehäuse“ · Markt ·
-
PDF
MCP23017-Datasheet.pdf
parameters (i.e., voltage, temperature, serial bus frequency, etc.) must be met to ensure proper operation. DS20001952C-page 12 2005-2016 Microchip Technology Inc. MCP23017/MCP23S17 3.2.1 BYTE MODE AND SEQUENTIAL These two modes are not to be confused with single MODE writes/reads and continuous writes/reads
in „kennt jemand sich aus mit MC23017 IO-Board“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS-000021-v1.22.pdf
85°C 5-Terminal LGA_CAV 10,000 13” Tape and Reel EV_ICS-40180-FX — Flexible Evaluation Board — Page 12 of 14 Document Number: DS-000021 Revision: 1.2 ICS-40180 REVISION HISTORY REVISION DATE REVISION DESCRIPTION 10/7/2014 1.0 Initial Release 11/17/2014 1.1 Updated General Description information 04/03
in „Analog MEMS Mikrofon am Mikrocontroller“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
CS5560_PP2.pdf
intended for the conditions specified for each table in the Characteristics and Specifications sec- tion. 12 DS713PP2 5/4/09 CS5560 2. OVERVIEW The CS5560 is a 24-bit analog-to-digital converter capable of 50 kSps conversion rate. The device is ca- pable of switching multiple input channels at a high rate with
in „Bipolare Eingänge ADC“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
SC51P66E04_Datasheet_1.20190628115453636973.pdf
P1/P3 0 - 0.3VDD V IL P1/P3.0-P3.1 - 1.0 - V Input hysteresis VHYS IO） P3.2 - 0.3 - V V DD.0V P1(P1DS=0)/P3.0/P3.1 - 6.0 - Output source current OH V OH.9V DD mA P1(P1DS=1) - 12.0 - P1(P1DS=0) - 8.5 - Output sink current OL V OL.1V DD mA P1(P1DS=1)/P3 - 17.0 - HANGZHOU SILAN MICROELECTRONICS CO.,LTD
in „Welche IC's / Funktion Mittelabgriff Akkupack ?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
2sk3142.pdf
High Speed Power Switching ADE-208-681A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS(on)4 m typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 12 3 1. Gate 2. Drain S 3. Source 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irl2203npbf.pdf
6000 VGS = 0V, f = 1MHz D = 60A Ciss= Cgs + Cgd ,Cds SHORTED C = C ) V = 24V 5000 Crss= Cgd + C ( V DS= 15V oss ds gd g 12 DS F t ( 4000 o e V n Ciss c 9 t u c 3000 o p o a - 6 , 2000 Coss t C G , S 3 1000 VG Crss FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 20 40 60 80 V DS , Drain-to-Source Voltage
in „IRL2203N defekt?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
TN2404K.pdf
MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 4 Part V R V I Q Secondary Breakdown Free: 260 V DS DS(on) GS(th) D g Number (V) () (A) (A) (Typ.) Low Power/Voltage Driven TN2404K 0.2 Low Input and Output Leakage TN2404K, 240 4 at GS = 10 V 0.8 to 2 4.87 nC 0.3 Excellent Thermal Stability BS107KL
in „MOSFET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF4905.pdf
On-Resistance Vs.Temperature IRF4905PbF 7000 V = 0V, f = 1MHz 20 I = -38A CGS = C + C , C SHORTED D iss gs gd ds ) 6000 Crss = Cgd ( V DS = -44V Coss = Cds + Cgd e16 V = -28V ) a DS F 5000 o ( C iss V c e12 n 4000 r i C o a oss - p 3000 t C t 8 , a C 2000 G C rss ,S G4 1000 - FOR TEST CIRCUIT 0 A 0 SEE FIGURE 13
in „Frage zu Push Pull Abwärtswandler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
0900766b81417515.pdf
PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance V R ID (BR)DSS DS(ON) T A 25°C • Low Gate Threshold Voltage • Low Input Capacitance 35V 35mΩ @ V GS = 10V 13A • Fast Switching Speed • Low Input/Output Leakage -35V 45mΩ @ V GS = -10V -12A • Complementary Pair MOSFET
in „Datenblatt DMG4511SK4 COMPLEMENTARY PAIR MOSEFT“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LM2661.pdf
Resistance vs Supply Voltage DS012911-7 DS012911-8 DS012911-9 Output Source Efficiency vs Load Resistance vs Output Voltage Drop Temperature Current vs Load Current DS012911-11 DS012911-12 DS012911-10 3 www.national.com 1 6 2 Typical
in „pegelanpassung analog“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
162399-da-01-en-IRF_4905.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF4905_TO220.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „FET Frage (n oder p)“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
pl2303.pdf
LD_MODE GND 7 22 TRI_MODE VDD 8 21 GND DSR_N 9 20 VDD DCD_N 10 19 RESET CTS_N 11 18 GND_3V3 SHTD_N 12 17 VDD_3V3 EE_CLK 13 16 DM EE_DATA 14 15 DP PL-2303 Product Datasheet - 3 - Document Revision 1.3 Release Date: July, 2002 ds_pl2303_v14 Block Diagram USB Port USB Transceiver REGISTER/ Control USB CONFIG
in „USB - seriell Adapter für 1,- EUR!“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS1000Z_Firmware_Release_Notes-7.pdf
Instrument Firmware Release Notes Models DS1054Z, DS1074Z, DS1104Z, DS1054Z-S, DS1074Z-S, DS1104Z-S, MSO1074Z, MSO1104Z, MSO1074Z-S, MSO1104Z-S Version Information Released version: 00.04.03.02.03 Release Date: 10/20/2015 Compatibility Compatible
in „Rigol-DS1054Z“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
ALD110800-1489.pdf
and depletion mode devices. When the gate is set at 0.00V, the drain M1 M2 14 D current is +1µA@ V DS = 0.1V, which allows a class of circuits with output DN1 3 N2 S 4 V+ 13 V+ voltage level biased at or near input voltage level without voltage level 12 shift. These devices exhibit well controlled turn-off
in „Radiobasteln - Was hat 2018 noch Aussicht auf Erfolg ?“ · HF, Funk und Felder ·
-
PDF
MCP6562.pdf
5.0 6.0 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 V CM (V) VCM (V) FIGURE 2-9: Input Offset Voltage vs. FIGURE 2-12: Input Hysteresis Voltage vs. Common-mode Input Voltage. Common-mode Input Voltage. DS22139B-page 6 © 2009 Microchip Technology Inc. MCP6561/1R/1U/2/4 Note: Unless otherwise indicated, V DD = +1.8V to
in „Schmitttrigger mit MCP6562 unklare Abweichung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
CPH3308.pdf
66 ns Fall Time f See specified Test Circuit. 56 ns Total Gate Charge Qg V =-10V, V =-10V, I =-4A 12 nC DS GS D Gate-to-Source Charge Qgs VDS =-10V, VGS =-10V, D =-4A 1.5 nC Gate-to-Drain “Miller” Charge Qgd VDS =-10V, VGS =-10V, D =-4A 2 nC Diode Forward Voltage V SD S =-4A, VGS =0 -0.8 -1.5 V Switching
in „2x SMD Marking gesucht“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
71858.pdf
T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 12 DS V Gate-Source Voltage V GS ± 8 T = 25 °C 22 13 Continuous Drain Current JT = 150 °C) A ID TA= 70 °C 18 11 Pulsed Drain Current IDM 50 A Continuous Source Current (Diode Conduction) IS 4.1 1.6 Single
in „Mosfet! Wie temperatur berechnen?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Tiny15L.pdf
) .020(.508) 10 ATtiny15L 1187DS–12/01 Atmel Headquarters Atmel Product Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway 1150 E. Cheyenne Mtn. Blvd. San Jose, CA 95131 Colorado Springs, CO 80906 TEL (408
in „Frequenzschalter“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF3205.pdf
3 IRF3205 6000 16 VGS = 0V, f = 1 MHZ ID= 62A Ciss = gs + Cgd, ds SHORTED V VDS = 44V C = C (14 VDS = 27V 5000 rss gd g V = 11V Coss = Cds+ Cgd t12 DS F o (4000 V c Ciss c10 n u i3000 o a - 8 a - C t 6 C2000 Coss a G S 4 1000 G Crss V 2 0 0 1 10 100 0 20 40 60 80 100
in „Hohe Ströme aus Akku Entladen ?!“ · Mikrocontroller und Digitale Elektronik ·