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PDF
21709c.pdf
which can be obtained from Microchip’s web site: www.microchip.com. 2003 Microchip Technology Inc. DS21709C-page 3 24AA02/24LC02B FIGURE 1-1: BUS TIMING DATA 5 4 2 3 SCL 7 8 9 10 6 SDA 14 IN 11 12 SDA OUT FIGURE 1-2: BUS TIMING START/STOP D4 SCL 6 7 10 SDA Start Stop DS21709C-page 4 2003 Microchip
in „24LC02B mit (scheinbar) seltsamer Adressierung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
vfd-ds1307-2.bas
Config Date = Dmy , Separator = . $lib "i2c_twi.lbx" ' Config Sda = Portc.1 Config Scl = Portc.0 Const Ds1307w = &HD0 Const Ds1307r = &HD1 Config Twi = 100000 Enable Interrupts Declare Sub Showiw18 Declare Sub Setweekday Strich = 21 'Date$ = "13.05.11" 'Time$ = "23:27:30" 'Weekday = 6 'Call Setweekday Do
in „Schaltplan für IW-18 Uhr mit zwei UDN2981“ · Mikrocontroller und Digitale Elektronik ·
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PDF
25AA128.pdf
-lead SN = Plastic SOIC (3.90 mm body), 8-lead ST = TSSOP, 8-lead © 2009 Microchip Technology Inc. DS21831D-page 23 25AA128/25LC128 NOTES: DS21831D-page 24 © 2009 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification
in „SPI EEPROM -> Kein Page read :- O“ · Mikrocontroller und Digitale Elektronik ·
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PDF
rdr-840q_30w_INN3977CQ.pdf
, 12 V 2.5 A (30 W) 8.1.3.1 SR FET Version Load V OUT IOUT Efficiency (V) (mA) (%) 100% 11.74 2498.75 88.56 75% 11.92 1873.75 90.63 50% 12.01 1250.00 90.36 25% 12.01 624.06 87.22 10% 11.95 250.00 82.59 Average 89.19 8.1.3.2 Qspeed Version Load V OUT IOUT Efficiency (V) (mA) (%) 100% 11.77 2504.25 86.14
in „Frage zu PowerInc INN3977CQ“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IPD025N06N-DS-v02_05-EN.pdf
according to IEC61249-2-21 Table 1 Key Performance Parameters Drain Parameter Value Unit Pin 2, Tab V DS 60 V R DS(on),max 2.5 m Gate Pin 1 ID 90 A Source Pin 3 Q OSS 81 nC Q G0V..10V) 71 nC Type / Ordering Code Package Marking Related Links IPD025N06N PG-TO252-3 025N06N - 1) J-STD20 and JESD22 Final Data
in „N-Channel Mosfet gesucht - IPD025N06N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TN2404K.pdf
MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 4 Part V R V I Q Secondary Breakdown Free: 260 V DS DS(on) GS(th) D g Number (V) () (A) (A) (Typ.) Low Power/Voltage Driven TN2404K 0.2 Low Input and Output Leakage TN2404K, 240 4 at GS = 10 V 0.8 to 2 4.87 nC 0.3 Excellent Thermal Stability BS107KL
in „MOSFET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS18B20-PAR_TO-92__12_BIT_0_5__Fehler.pdf
1 1 THERMOMETER RESOLUTION CONFIGURATION Table 3 R1 R0 Resolution Max Conversion Time 0 0 9-bit 93.75 ms (CONV /8) 0 1 10-bit 187.5 ms (CONV /4) 1 0 11-bit 375 ms (t /2) CONV 1 1 12-bit 750 ms (CONV ) CRC GENERATION CRC bytes are provided as part of the DS18B20-PAR’s 64-bit ROM code and in the 9 byte
in „Genauigkeitsangabe auf einem Thermometer“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
LT3756.pdf
V V 1.23 1.99 1.99 1.22 1.98 1.98 1.21 1.97 1.97 1.20 1.96 1.96 0 20 40 60 80 100 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) VIN(V) 37561 G04 37561 G05 37561 G06 Switching Frequency SHDN/UVLO Hysteresis Current Switching Frequency vs R T vs Temperature vs
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PDF
STW12NK90Z.pdf
breakdown voltage VDS = max rating I Zero gate voltage V = max rating, 1 µA DSS drain currentGSV= 0) DS 50 µA TC = 125°C Gate-body leakage GSS current (V = 0) VGS = ± 20V ±10 µA DS V Gate threshold voltage V = V , I = 100µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on RDS(on) VGS = 10V,DI = 5.5A
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
488161_1_.pdf
30 + 75 In/lb - Ft/lb akustisches 46 - 60 30 + 45 und 2 verschiedenen optisches Signal bei Sitzwinkeln, dazu die 52 - 65 60 + 75 Erreichen des Messwertes passenden Führungs- Satz 2 (Best. - Nr. 501148) Kein
in „Funktionsweise von analogen elektronischen Drehzahlmessern?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CET_CEU3252.PDF
CED3252/CEU3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 25A, R = 28mW @V = 10V. DS(ON) GS R = 39mW @V = 4.5V. DS(ON) GS Super high dense cell design for extremely low R. DS(ON) High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G
in „Was ist das für ein Bauteil "3252 914AG" ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
en.DM00023581.pdf
(A/us) di/dt(A/usec) 5 1.75 4.5 Vin=5V 1.5 4 Vdd=15V Vin=3.5V 3.5 Id=1.5A 1.25 Vdd=15V Id=1.5A 3 1 2.5 0.75 2 1.5 0.5 1 0.25 0.5 0 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 250 500 750 1000 1250 1500 1750 2000 2250 2500
in „Trix Mobile Station seltsamer Fehler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS18B20.pdf
18B20 (See Note) DS18B20 in Lead-Free 8-pin uSOP DS18B20U+T&R 18B20 (See Note) DS18B20 in Lead-Free 8-pin uSOP, 3000 Piece Tape- and-Reel DS18B20Z DS18B20 DS18B20 in 150 mil 8-pin SO DS18B20Z/T&R DS18B20 DS18B20 in 150
in „Suche nach einem Temperatursensor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS18B20.pdf
18B20 (See Note) DS18B20 in Lead-Free 8-pin uSOP DS18B20U+T&R 18B20 (See Note) DS18B20 in Lead-Free 8-pin uSOP, 3000 Piece Tape- and-Reel DS18B20Z DS18B20 DS18B20 in 150 mil 8-pin SO DS18B20Z/T&R DS18B20 DS18B20 in 150
in „Mehrere DS18B20 an einen Pin Avr-Mega32“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datenblatt_DS18B20.pdf
/T&R -55°C to +125°C 8 μSOP (3000 Piece) 18B20 DS18B20U+T&R -55°C to +125°C 8 μSOP (3000 Piece) 18B20 DS18B20Z -55°C to +125°C 8 SO DS18B20 DS18B20Z+ -55°C to +125°C 8 SO DS18B20 DS18B20Z/T&R -55°C to +125°C 8 SO (2500 Piece) DS18B20 DS18B20Z+T&R -55
in „DS18B20 Darstellung von negativen Zahlen im Zweierkomplement?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datenblatt_DS18B20.pdf
/T&R -55°C to +125°C 8 μSOP (3000 Piece) 18B20 DS18B20U+T&R -55°C to +125°C 8 μSOP (3000 Piece) 18B20 DS18B20Z -55°C to +125°C 8 SO DS18B20 DS18B20Z+ -55°C to +125°C 8 SO DS18B20 DS18B20Z/T&R -55°C to +125°C 8 SO (2500 Piece) DS18B20 DS18B20Z+T&R -55
in „Timing Probleme 1-Wire“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datenblatt_DS18B20.pdf
/T&R -55°C to +125°C 8 μSOP (3000 Piece) 18B20 DS18B20U+T&R -55°C to +125°C 8 μSOP (3000 Piece) 18B20 DS18B20Z -55°C to +125°C 8 SO DS18B20 DS18B20Z+ -55°C to +125°C 8 SO DS18B20 DS18B20Z/T&R -55°C to +125°C 8 SO (2500 Piece) DS18B20 DS18B20Z+T&R -55
in „1-Wire Protokollablauf“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TLV431-DIO.pdf
VREF,f = <1kHz Z KA impedance K = 0.1 to 15mA 0.25 0.4 Ω TLV431 3 of 14 October 2012 Document number: DS32088 Rev. 6 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated TLV431 Typical Characteristics 56kΩ O/P 75kΩ K S1 100nF 10mA 10kΩ Test Circuit fREFVasurement TLV431 4 of 14 October 2012 Document number: DS32088 Rev. 6 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated TLV431 Typical Characteristics (cont.) TLV431 5 of 14 October 2012 Document number: DS32088 Rev. 6 - 2 www.diodes.com
in „Schaltung zur Ürberwachung der 9 Volt Batteriespannung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
OneWire.c
while(1); } // the first ROM byte indicates which chip switch (addr[0]) { case 0x10: printf("Chip = DS18S20"); // or old DS1820 type_s = 1; break; case 0x28: printf("Chip = DS18B20"); type_s = 0; break; case 0x22: printf("Chip = DS1822"); type_s = 0; break; default: { printf("Device is not a DS18x20 family
in „Böses One-Wire device“ · Mikrocontroller und Digitale Elektronik ·
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PDF
21483b.pdf
= 10V and adjustINor REF for 10kHz output. 3. To increasOUTMAX to 100kHz, changREF to 2pF andINTto 75pF. 4. For high performance applications, use high stability cINpoREF, VREF(metal film resistors and glass capacitors). Also, separate output ground (Pin 9) from input ground (Pin 6). DS21483B-page 8
in „Frequenzen vervielfachen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
24LC32A.pdf
which can be obtained on Microchip’s web site: www.microchip.com. 2003 Microchip Technology Inc. DS21713D-page 3 24AA32A/24LC32A FIGURE 1-1: BUS TIMING DATA 5 4 2 3 SCL 7 8 9 10 6 SDA IN 14 12 11 SDA OUT FIGURE 1-2: BUS TIMING START/STOP D4 SCL 6 7 10 SDA Start Stop DS21713D-page 4 2003 Microchip
in „I2C Eeprom: Buskollisionen nach einem schnellen Reset“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LTC3824fg.pdf
( 2 E 0 N400 E VR U V 1 Δ E ∆ F300 –0.2 0 200 –1 –0.4 100 –2 0 10 20 30 40 50 60 100 200 300 400 –75 –50 –25 0 25 50 75 100 125 150 V CC(V) R SETkΩ) DIE TEMPERATURE (°C) 3824 G04 3824 G05 3824 G06 3824fg 4 LTC3824 Typical Performance Characteristics TA= 25°C unless otherwise noted. Burst Mode Disabled
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS18B20.pdf
1 1 THERMOMETER RESOLUTION CONFIGURATION Table 3 R1 R0 Resolution Max Conversion Time 0 0 9-bit 93.75 ms (tCONV/8) 0 1 10-bit 187.5 ms (tCONV/4) 1 0 11-bit 375 ms (tCONV/2) 1 1 12-bit 750 ms (tCONV) CRC GENERATION th CRC bytes are provided as part of the DS18B20’s 64-bit ROM code and in the 9 byte of
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PDF
DS18b20.pdf
1 1 THERMOMETER RESOLUTION CONFIGURATION Table 3 R1 R0 Resolution Max Conversion Time 0 0 9-bit 93.75 ms (CONV /8) 0 1 10-bit 187.5 ms (CONV /4) 1 0 11-bit 375 ms (CONV /2) 1 1 12-bit 750 ms (CONV ) CRC GENERATION th CRC bytes are provided as part of the DS18B20’s 64-bit ROM code and in the 9 byte of
in „Temperatur ohne AD-Eingang messen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS18b20.pdf
1 1 THERMOMETER RESOLUTION CONFIGURATION Table 3 R1 R0 Resolution Max Conversion Time 0 0 9-bit 93.75 ms (CONV /8) 0 1 10-bit 187.5 ms (CONV /4) 1 0 11-bit 375 ms (CONV /2) 1 1 12-bit 750 ms (CONV ) CRC GENERATION th CRC bytes are provided as part of the DS18B20’s 64-bit ROM code and in the 9 byte of
in „Displaybeleuchtung faden ohne Analog I/O“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP73871-Data-Sheet-20002090E__2_.pdf
μA STATUS - TE LOGIC HTVT + THERM CE LTVT - VSS VREF(1.21V) 2008-2019 Microchip Technology Inc. DS20002090E-page 3 MCP73871 NOTES: DS20002090E-page 4 2008-2019 Microchip Technology Inc. MCP73871 1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage
in „Fehlersuche beim MCP73871“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7822.pdf
5.0 6.5 mΩ V GS= 4.5V, D = 15AR on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250µA GS(th) DS GS D Drain-Source Leakage DSS 30 V DS= 24V, VGS= 0 Current Current* 150 µA V DS= 24V, VGS= 0, Tj = 100°C Gate-Source Leakage GSS ±100 nA V GS= ±12V Current Total Gate Chg Cont FET QG 44 60 V GS.0V, I
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS2413.pdf
Overdrive speed, VPUP 4.5V µs Time (Note 15) (Note 14) 8 25 Overdrive speed (Note 14) 8 32 2 of 18 DS2413: 1-Wire Dual Channel Addressable Switch PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Standard speed, V PUP > 4.5V 67.4 75 Presence Detect Sample MSP Standard speed 69.6 75 µs Time (Notes 1, 20)
in „OneWire Problem DS2413“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1811070920_CET-Chino-Excel-Tech-CEG8205A_C154283.pdf
CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, R DS(ON)= 25mW @V GS= 4.5V. R = 35mW @V = 2.5V. DS(ON) GS Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. S1 2 7 S
in „Verbraucher mit Attiny45 über Mosfet zuschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BLF578XR.pdf
Application information Mode of operation f VDS PL G p D (MHz) (V) (W) (dB) (%) CW 108 50 1200 26 75 pulsed RF 225 50 1400 24 71 1.2 Features and benefits Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an Dq of 40 mA, a p of 100 s with of 20 %: Output power =
in „Verstärkerschaltung für einen UKW-Sender“ · HF, Funk und Felder ·
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PDF
top200yai.pdf
on and charges the external inversely proportional to the current voltage,V withathresholdvoltage. DS(ON), capacitance again. Charging current is flowing into the CONTROL pin. The High drain current causes V DS(ON)to shown with a negative polarity and error signal across E is filtered by an exceed the
in „Reparatur Ladegerät DBL430-14 Überspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
93LC66.pdf
(0.127mm) per side. JEDEC Equivalent: MO-153 Drawing No. C04-086 2003 Microchip Technology Inc. DS21795A-page 17 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C NOTES: DS21795A-page 18 2003 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C ON-LINE SUPPORT SYSTEMS INFORMATION AND Microchip provides
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PDF
tps2552.pdf
RILIM= 20 kW, e T = 25°C n 125 DRV Package 16 A t s m e - 14 e 100 s t n 12 - DBV Package p n e O 75 R 10 r i u i S t 8 i 50 n r r D u 6 t C t 4 - 25 o D 2 r 0 -50 0 50 100 150 0 T J Junction Temperature - °C 0 1.5 3 4.5 6 Peak Current - A Figure 15. Current Limit Response – µs Figure 16. MOSFET r DS
in „Problem mit FSUSB30 als USB-Schalter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LDO.pdf
4.6 E 3.3 3.5 3.7 H 6.7 7.0 7.3 V 10º DS12022 - Rev 6 page 15/23 LDL1117 SOT223 packing information 8.2 SOT223 packing information Table 6. SOT223 tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Typ. Max. Min. Max. A0 6.75 6.85
in „STM32 - 5V tolerante Pins bei Startup“ · Mikrocontroller und Digitale Elektronik ·
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PDF
182853-da-01-en-IRLR_8103V.pdf
= 0, DS GS Tj = 100°C Gate-Source Leakage IGSS ±100 nA VGS = ±20V Current Total Gate Chg Cont FET Q 27 V =5V, I =15A, V =16V G GS D DS Total Gate Chg Sync FET Q 23 V = 5V, V < 100mV G GS DS Pre-Vth Q GS1 4.7
in „Drehzahlmesser für Drehbank“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Wohnraumuhr1_Rev1.1.pdf
IC3 +5V D D1 78S05 3 RST TL 6 IN OUT X2-1 + 4 5 1N4001 C5 C6 GND C7 GND TC X2-2 1000µ/25V 100n 100n DS1620 AK500 GND GND GND GND GND GND 1 2 3 4 5 6 Gehäuse BOPLA ET-233 . 2 1 Gehäuse Fischer GD 135 38 220 (200) ELV_DC2_91610DCF2 2 DCF1 1 J + Sig- C8 1 3 10µ/16V D2 D3 D4 D5 0 0 0 0 0 0 0 0 8 8 8 8 8 8
in „wohnraumuhr 2 - leiterplatte nach projekt scott huehn“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Bauteile.pdf
17N80C3 800V 17A NKanal 25 46 Bauteil Mos-Fet IRL2910PBF 100V 55A NKanal 47 Bauteil Mos-Fet IRF2805 55V 75A 47 mΩ 3 48 Bauteil Mos-Fet STP12NM50 N 500V 12A 350 mΩ N Kanal 37 49 Bauteil NPNTransistor BDX37 75V 5A NPNTransistor 12 50 Bauteil Optokoppler SFH620A-3 5,3kV Pin 99 51 Bauteil Optokoppler BRT23H Pin
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PDF
spp20n60s5_eng_tds.pdf
SPP20N60S5 Cool MOS™ Power Transistor V DS 600 V Feature R DS(on) 0.19 Ω • New revolutionary high voltage technology D 20 A • Worldwide best R in TO 220 DS(on) • Ultra low gate charge PG-TO220 2 • Periodic avalanche rated • Extreme dv/dt rated
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSS84.pdf
drain-source breakdown I =D−10 A; V GS = 0 V −50 - - V voltage V GS(th) gate-source threshold ID= −1 mA; V DS = VGS ; voltage see Figure 8 T j= 25 °C −0.8 - −2 V T j= −55 °C - - −1.8 V IDSS drain leakage current V DS = −40 V; VGS = 0 V T j= 25 °C - - −100 nA V DS = −50 V; VGS = 0 V T j= 25 °C - - −10 A T j=
in „Batterie von ADC-Eingang des uC trennen (low power)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
EMB20P03G.pdf
J On‐State Drain Current 1 I V = ‐5V, V = ‐10V ‐10 A D(ON) DS GS 1 Drain‐Source On‐State Resistance R DS(ON) VGS= ‐10V, I D ‐10A 17.5 20 mΩ V GS ‐4.5V, I D ‐7A 26 35 1 Forward Transconductance gfs V DS ‐5V, I D ‐10A 24 S DYNAMIC Input Capacitance C iss 1407 V = 0V, V = ‐15V, f = 1MHz Output Capacitance C oss GS DS 208 pF Reverse Transfer Capacitance C rss 164 Gate Resistance Rg V GS 15mV, V = 0DS f = 1MHz 4.5 Ω Total Gate Charge 1,2 Q gV GS0V) 20.3 Q g VGS4.5V ) V DS = ‐15V, V GS‐10V, 9.8 I = ‐10A nC Gate‐Source
in „Logo & Bezeichnung von defektem IC gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
JSM6333C.pdf
N&P-Channel Complementary Power MOSFET Product Summary ● VDS 30V ● RDDS(ON)at GS=10V) ＜95mohm ● R DS(ON)at GS=4.5V) ＜150mohm PMOS ● IDS -2.5A ● R DS(ON)at GS=-10V) ＜220mohm ● R DS(ON)at GS=-4.5V) ● 100% ▽V DSTested r General Description o ● High density cell design for lDS(ON) t ● High Speed switching
in „Identifizierung Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CPH3308.pdf
Drain-to-Source Breakdown Voltage V I =-1mA, V =0 -30 V (BR)DSS D GS Zero-Gate Voltage Drain Current IDSS V DS=-30V, VGS =0 -1 A Gate-to-Source Leakage Current I V =±16V, V =0 ±10 A GSS GS DS Cutoff Voltage VGS (off) V DS=-10V, D =-1mA -1.0 -2.4 V Forward Transfer Admittance yfs V =-10V, I =-2A 3 4.3 S DS
in „2x SMD Marking gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CS5560_PP2.pdf
IOH = -2 mA 1.8 1.65 3.3 0.36 Maximum Low-level Output Voltage: V 2.5 0.36 V IOH = -2 mA OL 1.8 0.44 DS713PP2 11 5/4/09 CS5560 RECOMMENDED OPERATING CONDITIONS (VLR = 0V, see Note )5 Parameter Symbol Min Typ Max Unit Single Analog Supply DC Power Supplies: (Note 15) V1+ V1+ 4.75 5.0 5.25 V V2+ V2- 4.75
in „Bipolare Eingänge ADC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Battery-Protection-LiIon-2S-HY2120.pdf
Technology Corp DS-HY2120-V15_EN www.hycontek.com page18 HY2120 2-Cell Lithium-ion/Lithium Polymer Battery Packs Protection ICs 13.Package information SOT-23-6 specifications. 13.1.SOT-23-6 NOTE: All dimensions are in
in „[S] LiIo-Akku“ · Markt ·
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PDF
Battery-Protection-LiIon-2S-HY2120.pdf
Technology Corp DS-HY2120-V15_EN www.hycontek.com page18 HY2120 2-Cell Lithium-ion/Lithium Polymer Battery Packs Protection ICs 13.Package information SOT-23-6 specifications. 13.1.SOT-23-6 NOTE: All dimensions are in
in „Bauteil identifizieren: Marking: 3X“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2N7002.pdf
temperature - - -5.5 mV/ C VGS = V DSI D 250µA IGSS Gate body leakage current - - ±100 nA VGS = ±20V, V DS = 0V - - 1.0 VGS = 0V, V DS= Max rating IDSS Zero gate voltage drain current µA V = 0V, V = 0.8Max rating, - - 500 GS O DS TA= 125 C ID(ON) On-state drain current 500 - - mA VGS = 10V, V DS = 25V Static drain-to-source - - 7.5 VGS = 5.0V, ID= 50mA R DS(ON) Ω on-state resistance - - 7.5 V = 10V, I = 500mA GS D ∆R Change in R with temperature - - 1.0 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transconductance 80 - - mmho V = 25V, I = 500mA
in „MOSFET Beschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IPD180N10N3_G-DS-v02_03-en.pdf
IPD180N10N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level RDS(on),max TO-263 18 mW • Excellent gate charge x DS(on)roduct (FOM) D 43 A • Very low on-resistance DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
in „MosFet; unterschiedliche Schaltzeiten aus Datenblatt und Simulation“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
drv8811.pdf
FULL-SCALE) (% FULL-SCALE) (DEGREES) 3 5 9 0 100 90 10 –20 98 101.25 6 11 –38 92 112.5 12 –56 83 123.75 2 4 7 13 –71 71 135 14 –83 56 146.25 8 15 –92 38 157.5 16 –98 20 168.75 5 9 17 –100 0 180 18 –98 –20 191.25 10 19 –92 –38 202.5 20 –83 –56 213.75 3 6 11 21 –71 –71 225 22 –56 –83 236.25 12 23 –38 –92 247.5 24 –20 –98 258.75 7 13 25 0 –100 270 26 20 –98 281.25 14 27 38 –92 292.5 28 56 –83 303.75 4 8 15 29 71 –71 315 30 83 –56 326.25 16 31 92 –38 337.5 32 98 –20 348.75 8.3.5 Protection Circuits 8.3.5.1 Overcurrent Protection
in „UV-Laserdrucker II“ · Platinen ·
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Datei
Temp_LAN_display_Volt.ino
, 0x22, 0xD8, 0x85, 0x16, 0x3, 0xDD }; void writeTimeToScratchpad(byte* address) { //reset the bus ds.reset(); //select our sensor ds.select(address); //CONVERT T function call (44h) which puts the temperature into the scratchpad ds.write(0x44, 1); //sleep a second for the write to take place delay(550); } void readTimeFromScratchpad(byte* address, byte* data) { //reset the bus ds.reset(); //select our sensor ds.select(address); //read the scratchpad (BEh) ds.write(0xBE); for (byte i = 0; i < 9; i++) { data[i] = ds.read(); } } float getTemperature(byte* address) { int tr; byte
in „atmaga2560 + Interrupt + lan = abbruch.“ · Mikrocontroller und Digitale Elektronik ·
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si4946ey.pdf
N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V (V) r (W) I (A) DS DS(on) D D 175_C Maximum Junction Temperature D 100% R Tested 0.055 @ VGS = 10 V 4.5 g Pb-free 60 Available 0.075 @ VGS = 4.5 V 3.9 SO-8 D S D 1 1 8 1 G D 1 2 7 1 S D 2 3 6 2 G G D 2 4 5 2 Top View Ordering
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·