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PDF
hd44780.pdf
8 CC OL (except DB0–DB7) Driver on resistance R — 2 20 kΩ ±Id = 0.05 mA, 13 COM (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 kΩ ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current ILI –1 — 1 µA VIN = 0 to CC 9 Pull-up MOS current –Ip 10 50 120 µA V CC= 3 V (DB0
in „HD44780 Zeichen im ROM“ · Mikrocontroller und Digitale Elektronik ·
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PDF
www.eio.com-hd44780_18-48-46.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „Fehler bei 4Bit LCD Init?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780__Dot_Matrix_LCD_Controller_Driver_.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „Falsche Zeichen bei LCD-Ausgabe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780.PDF
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „Busy-Flag bei LCDs“ · Mikrocontroller und Digitale Elektronik ·
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PDF
hd44780.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „LCD ohne Umlaute?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780U.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „LCD ohne Datenblatt oder Hinweise zur Pinbelegung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
hd44780.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „LCD (von Tel) -Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
hd44780.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „Sinnlose Probleme mit LCD...“ · Mikrocontroller und Digitale Elektronik ·
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PDF
hd44780.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „System(Mikrocontroller usw) mit Batterie betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
hd44780.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „ATMEL_2x16LCD_Zeile 2“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „LCD Ansteuerung (PIC 18F1220)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780.PDF
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „LCD Display in 4 Bit Modus bringen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780.PDF
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „Datenblatt zu HD44780 1602 LCD Modul Display Anzeigen 2X16 Zeichen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „Standart LCD per i2c expander betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
hd44780u_Datenblatt.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „hd44780 / LCD SC1602D / ATmega16 (STK500)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HD44780U.pdf
IOL 0.04 mA 8 (except DB0–DB7) Driver on resistance R COM — 2 20 k ±Id = 0.05 mA, 13 (COM) VLCD = 4 V Driver on resistance R SEG — 2 30 k ±Id = 0.05 mA, 13 (SEG) VLCD = 4 V Input leakage current I –1 — 1 µA VIN
in „LCD Initialisierung Mikrocontroller“ · Mikrocontroller und Digitale Elektronik ·
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PDF
schematics.pdf
P1 Temp_1 ADC_TEMP PI CD2 P2 D1 P2 D3 Temp_2 ADC_TEMP2 GND GND GND D Title D Size Number Revision A4 Date: 06.02.2016 Sheet of File: C:\Users\..\ESC.SchDoc Drawn By: 1 2 3 4 1 2 3 4 A A VCC PI P0 PI P1 0 k k k PI P01PI22P13 B CR COR CRR CR B POHALL3IN P12 PR1 PO LL30OUT HALL3_IN R10 10k HALL3_OUT POHALL2IN
in „BLDC Motorcontroller 200A 48V basierend auf VESC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFHS8342-DataSheet-v01_01-EN.pdf
. Typ. Max. Units Conditions BV DSS Drain-to-SourceBreakdownVoltage 30 ––– ––– V VGS = 0V,DI = 250μA ΔΒ V / T BreakdownVoltageTemp. Coefficient ––– 22 ––– mV/°C Referenceto25°C, I = 1mA DSS J D RDS(on) Static Drain-to-SourceOn-Resistance ––– 13 16 VGS = 10V, D = 8.5ed ––– 20 25 mΩ V = 4.5V, I = 6.8e
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
mines3.c
Spielfeldes } while (forb_bpos); mfeld[zufall]= 0x80; // zufaellige Mine ins Feld eintragen } settextattr(0x0a); gotoxy(xofs+13, yofs); printf("MineSweeper"); txbox2(xofs+feldw-1, yofs+1, xofs+(mfeldx * feldw)-1 ,yofs+mfeldy , 0x07, 0x07, minecol[0]); txbox_bkg(xofs+1, yofs+1, xofs+(mfeldx * feldw)-1, yofs+mfeldy
in „Rekursives Floodfill nach Iteratives Floodfill, wie mache ich das?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3205S.pdf
= 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 101 ––– D = 62A ns td(off) Turn-Off Delay Time ––– 50 ––– RG= 4.5Ω tf Fall Time ––– 65 ––– VGS = 10V, See Fig. 10 4.5 Between lead, D LD
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CY8C38xxx.pdf
] P2[3]* GLOBALS BUS BUS GLOBALS GPIO 3 2 1] 0 R P2[4]* L TS VBE R R R R U S * U ] ] ] ] : VSS ref A A A A X Vio2 X L L L L ADC U U A A A A LPF AGR[3] A A AGL[3] AGL[2] AGR[2] AGL[1] AGR[1] AGL[0] AGR[0] Lower left AMUXBUSL AMUXBUSR 13 * * * * * Lower right Quadrant ] ] * * I 5 I* 6 I 7 [ [ I 4 I 5
in „Cypress ICE Cube“ · Mikrocontroller und Digitale Elektronik ·
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Datei
sheeva-boot.txt
MMIO 0xf1012000 (irq = 33) is a 16550A serial8250.0: ttyS1 at MMIO 0xf1012100 (irq = 34) is a 16550A Loading Marvell Ethernet Driver: o Cached descriptors in DRAM o DRAM SW cache-coherency o Single RX Queue support - ETH_DEF_RXQ=0
in „Sheevaplug brauche eine Einführung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APM2095.pdf
(V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 2 t i 1 s DutyCycle=0.5 a e T n D=0.2 e d D=0.1 t e 0.1 D=0.05 PD M e mp f l D=0.02 t1 E a D=0.01 t2 e r SINGLEPULSE l h 0.01 1.DutyCycle, D=t1/t2 a T o r 2.Per Unit BasthJA0 C/W o 3.JM-A =DM thJA N 4.SurfaceMounted 1E-3 1E-4
in „Ersatztyp P-Kanal MosFet APM2095P low gate voltage“ · Mikrocontroller und Digitale Elektronik ·
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PDF
grasshopper_mod.pdf
1 2 3 4 5 6 7 8 9 10 A A GND 15p 15p C37 C38 GND Y1 25MHz Y_HC49/4HSMX n C106 p 100n T U2 o t 42 43 R40 R41 s REF_CLK/XT2 XT1 CLK25 [1] 49R9 49R9 c C28 J2 17 R98 0R e 10n [1] ETH_TXD3 18 TXD3 a B [1] ETH_TXD2 19 TXD2 7 p 1
in „Grasshopper Inbetriebnahme“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Zeitdiagramm der dynamischen Kennwerte einer CPU
80 3. Beschreibung der Element des Systems U880 tC tW(CH) C tF(AD) tF tW(CL) tF AG...A15 tD(AD) tSC(D) tH tF(D) AG...A15 Eingang tDM(MD) Ausgang tD(D) tSC(D) tH tDL(MI) tDL(RF) tCAf tCO tDL(RF) tDH(RF) tW(MRL) tDH(MR) tCAf RFSH tDC(MR) tDH(MR) tW(MRH) tDH(MR) tF(C) tDH(MR) MREQ tDC(MR)
in „a Microprocessor for the Revolution -- 6809“ · Mikrocontroller und Digitale Elektronik · · Diagramme
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Datei
camera_OV7670_tmp.c
color bar, on 0x16 off 0x14 0x40, 0x14 , // COM15 - Selects RGB 565 [5:4] und Full Range [7:6] 0x3a, 0x05 , // TSLB - Window auto, YUYV [00] Ausgabe - TSLB [3], COM13[0] 0x42, 0x08 , // COM17 - AEC Window [7:6] Bit 1 und 0 wie COM4 [5:4], DSP Color Bar on/off[3], on 0x08 off 0x00 0x15, 0x00 , // COM10
in „OV7670 blockiert Bus nach senden des Registers“ · Mikrocontroller und Digitale Elektronik ·
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Datei
smartctl-a-dev_sda_output.txt
>smartctl -a /dev/sda smartctl 7.2 2020-12-30 r5155 [x86_64-linux-5.12.4-2-default] (SUSE RPM) Copyright (C) 2002-20, Bruce Allen, Christian Franke, www.smartmontools.org === START OF INFORMATION SECTION === Model Family: Seagate BarraCuda 3.5 Device Model: ST2000DM008-2FR102 Serial Number: ZFL0YWR3 LU WWN Device Id: 5 000c50 0c2c65c10 Firmware Version: 0001 User Capacity: 2,000,398,934,016 bytes [2.00 TB] Sector Sizes: 512 bytes logical, 4096 bytes physical Rotation
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Datei
smartctl-a-dev_sdb_output.txt
>smartctl -a /dev/sdb smartctl 7.2 2020-12-30 r5155 [x86_64-linux-5.12.4-2-default] (SUSE RPM) Copyright (C) 2002-20, Bruce Allen, Christian Franke, www.smartmontools.org === START OF INFORMATION SECTION === Model Family: Seagate BarraCuda 3.5 Device Model: ST2000DM008-2FR102 Serial Number: ZFL0YHCY LU WWN Device Id: 5 000c50 0c2d1cb33 Firmware Version: 0001 User Capacity: 2,000,398,934,016 bytes [2.00 TB] Sector Sizes: 512 bytes logical, 4096 bytes physical Rotation
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PDF
70687A-1.pdf
microcontroller can be used to measure the temperature value. 2012 Microchip Technology Inc. DS70687A-page 13 MiWi™ Demo Kit User’s Guide 2.1.7 EEPROM with MAC Address The Serial EEPROM is a low-power, Microchip 25LC256 256K SPI Bus Serial EEPROM, it uses shared SPI interface with SPI Serial Flash and
in „Was darf man von einer PCB-Antenne erwarten?“ · HF, Funk und Felder ·
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PDF
WX_Station.pdf
9 SW? P7 GND OLED_SDA_2 12 SD2 A SDA 19 3V3_SDA S INT 13 13 P 18 +3V3 D? CX12 V OLED_SCL_2 SC2 SCL 3V3_SCL OLED_I2C R? R? 11 INT2 INT 17 2 3 8 Address: 0b010 0001 VDD SCK OLED_SCL_1 270 4k7 C? 1 3 OLED_SDA_3 15 SD3 A0 1 0µ1 SW_B OLED_SCL_3 16 SC3 A1 2 1 4 2 4 14 S 3 GND SDA OLED_SDA_1 GND INT3 V A2 5 6 LED_1 1 Address: 0b111 0000 GND +3V3 B B GND +3V3 C? 6 SW? 0µ1 1 U? CX12 D SCL 12 3V3_SCL +3V3 +3V3 D? V 13 OLED_I2C R? R? SDA 3V3_SDA 2 3 270 4k7
in „Weller WX/WSM/WHS Serie Kabel Reverse Engineering“ · Mikrocontroller und Digitale Elektronik ·
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Datei
buildroot-2011.02-Mini2440-linux-2.6.39.patch
drivers/leds/leds-s3c24xx.c | 6 +++++- + 3 files changed, 7 insertions(+), 1 deletions(-) + +diff --git a/arch/arm/mach-s3c2410/include/mach/leds-gpio.h b/arch/arm/mach-s3c2410/include/mach/leds-gpio.h +index d8a7672..c3ae81f 100644 +--- a/arch/arm/mach-s3c2410/include/mach/leds-gpio.h ++++ b/arch/arm/mach-s3c2410
in „mini2440 Odyssee“ · Mikrocontroller und Digitale Elektronik ·
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Datei
FT800_config.h
abstraction funtions - added hardware-selection defines, first implemented for AVR8 - added FT_VM800B50A TFT setup as copy of FT_VM800B43A since FTDI uses the same setup for both 2.3 - moved pin definitions for FT_CS and FR_PDN to here from FT800_config.c - added a set of definitions for Arduino 2.4 - switched
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PDF
HD61202U.pdf
V3L V2R 6 75 V2L V1R 7 74 V1L V EE2 8 73 VEE1 Y64 9 72 Y1 Y63 10 71 Y2 Y62 11 70 Y3 Y61 12 69 Y4 Y60 13 68 Y5 Y59 14 67 Y6 Y58 15 HD61202UFS 66 Y7 (FP-100A) Y57 16 65 Y8 Y56 17 64 Y9 Y55 18 63 Y10 Y54 19 62 Y11 Y53 20 61 Y12 Y52 21 60 Y13 Y51 22 59 Y14 Y50 23 58 Y15 Y49 24 57 Y16 Y48 25 56 Y17 Y47 26 55
in „seltsames Grafik Display verhalten“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Google_Uebersetzer-Prescaler_12_Ghz.html
DumpException(e)} try{ var dm=function(a){_.I(this,a,0,-1,null,null)},fm;_.x(dm,_.G);_.em=function(a,b){this.A=a;this.o=b};_.em.prototype.log=function(a,b){b=void 0===b?new _.Yd:b;fm(this,a,b)};_.gm=function(a,b,c){c=void 0===c?new _.Yd:c;var d=a.o?103:14;_.N(c,18,b);fm(a,d,c)};_.hm=function(a,b,c){c=void 0===c?new _.Yd:c;var d=a.o?94:8,e=new dm;_.N(e,1,b);_.P(c,47,e);fm(a,d,c)};fm=function(a,b,c){var d=_.O(c,dm,47)||new dm;_.P(c,47,d);a.A.log
in „Vorverstärker und Vorteiler für Frequenzzähler“ · HF, Funk und Felder ·
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PDF
irf840_und_irf840fi.pdf
500 450 500 450 V VGS Gate-source Voltage 〉 20 V ID Drain Current (cont.) ac T = 25 C 8 8 4.5 4.5 A o ID Drain Current (cont.) ac T = 100 C 5.1 5.1 2.8 2.8 A DM ( ) Drain Current (pulsed) 32 32 32 32 A o Ptot Total Dissipation atcT = 25 C 125 40 W Derating Factor 1 0.32 W/ C V ISO Insulation Withstand
in „Unterschied zw. IRF840 und IRF840FI“ · Mikrocontroller und Digitale Elektronik ·
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PDF
uLogic.pdf
X6 1 P0U901 P0U906 VREF GND K 0 1 2 3 4 5 6 7 D U2 X5 2 P0U9021 VCB P0U955 X7 L A A A A A A A A L L IO2 IO4 C P P P P P P P P S S CY7C68013A GND 3 P0U903 P0U944 X8 1 1 VCC GND IO3 2 3 P P 0 0 0 TPD4E001 2 2 0 1 2 3 4 5 6 7 1 0 0 0 C C2 C C3 5 4 4 4 4 4 4 4 4 8 9 2 P P P P 12pF P 12pF
in „Logikanalzyer mit FT232BL“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IPA50R190CE-DS-v02_04-EN.pdf
Typ. Max. Unit Note / Test Condition Drain-source breakdown voltage V (BR)DSS 500 - - V V GSV, I =DmA Gate threshold voltage V (GS)th 2.50 3 3.50 V V DS , GS=0D51mA - - 1 V DS00V, V =0GS T=25°Cj Zero gate voltage drain current IDSS - 10 - A V =500V, V =0V, T=150°C DS GS j Gate-source leakage curent
in „Mosfet 5R190CE“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NTD4963N-D.PDF
V ID= 30 A 8.2 9.6 D = 15 A 8.2 mW V GS= 4.5 V ID= 30 A 13.6 16 D = 15 A 13.6 Forward Transconductance gFS VDS= 1.5 V,DI = 30 A 40 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 1035 Output
in „Vergleichsmosfet NTD 4963N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
emw3165.pdf
level Function SPI5_MOSI/I2S5_SD,I2C3_SDA 32 - - - Not connected TIM1_CH1N,SPI2_SCK/I2S2_CK, 33 PB13 I/O FT SPI4_SCK/I2S4_CK, TIM2_CH1/TIM2_ET, 34 PA5 I/O TC SPI1_SCK/I2S1_CK,ADC1_5 TIM1_CH4,SPI4_MISO,USART1_CTS, 35 PA11 I/O FT USART6_TX,USB_FS_DM TIM1_CH3N,TIM3_CH4, 36 PB1 I/O FT SPI5_NSS/I2S5_WS,ADC1
in „EMW3165 - Der ESP8266 Killer ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NTE2399.pdf
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A TC= +100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Pulsed Drain Current (Note 1), DM . . . . . . . . . . .
in „Kühlkörper eines NTE2399 berechnen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MSP-EXP430G2_LaunchPad_de.pdf
C 1u/6,3V C8 33k 9 VREGEN PUR 6____ 10 pe op 12 RESET DP 7 Anschluss . ri yri 2 WAKEUP DM U$2 m gh GND D1 22 CLKOUTD CTS 13 UCTS EZ_VBUS 1 VBUS S EZ_VCC 1N4148 DSR 14 UDSR R15 33R en t UTXD 19 SIN DCD 16 EZ_D- 2 D- ch tie © R16 R17RXD SOUT RI/CP 20 URTS R14 33R EZ_D+ 3 alt rpl 20 DNP 47k
in „gutes Übersetzungsprogramm für Datenblätter gesucht“ · Offtopic ·
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PDF
hd66701.pdf
mA 8 (except D0–D7) Driver on resistance RCOM — 2 20 k Id = 0.05 mA (COM) 13 (COM) Driver on resistance R — 2 30 k Id = 0.05 mA (SEG) 13 SEG (SEG) Input leakage current LI –1 — 1 A VIN = 0 to CC 9 Pull-up
in „Tipsend2 Pollin“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLU2905.pdf
Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS= 0V, D = 250µA ∆V(BR)DSSTJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°CD I 1mA RDS(on) Static Drain-to-Source On-Resistance––– 11 13.5 mΩ V = 10V, I = 36Ae GS D ––– ––– 20 mΩ VGS= 5.0V,
in „Batterieschutzschaltung. Murks oder möglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FB180SA10P.pdf
- 200 Gate to source forward leakage IGSS V = - 20 V - - - 200 nA GS Total gate charge Q - 250 380 g ID= 180 A Gate to source charge Qgs V DS = 80 V - 40 60 nC (1) Gate to drain ("Miller") charge Q gd V GS = 10.0 V; see fig. 6 and 13 - 110 165 Turn-on delay time td
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CFAG12864BTFHV_v3.0.pdf
F 2 . - - e 05. 2 2 4 4 o 8 8 H 1 1 i G G n a a 05. 2 F F C l o r r C C P z M g A 4 2 : 5 B t i i 6 A ( 0 0 e i c x i li o 0 . n V A 2 P t r . 7 il 0 . 1 e e . P 7 A 0 5 S D 2 e B 6 8 i P H d = c 0 T a ) l p c 0 0 8 0 a s n 7 1 1 ( e s I 1 - - x
in „avr asm LCD Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MPVD7N65.pdf
Unit Drain-source voltage V 650 V Gate-source voltage V GSS 30 V Drain current (DC)* I Tc=25C 7.0 A D 5.48 A Tc=100C Drain current (Pulsed)* I 28 A DM Single avalanche current(Note 2) I 7.0 A AS Single pulsed avalanche energy(Note 2) E 245 mJ AS Repetitive avalanche current(Note 1) AR 5.5 A Repetitive
in „Unbekannte Bauelemente“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STB10NK60Z.pdf
600 V V GS Gate-Source Voltage ± 30 V 10 ID Drain Current (continuous) Ct T = 25°C 10 (Note 3) 10 A 5.7 ID Drain Current (continuous) Ct T = 100°C 5.7 5.7 A (Note 3) DM 36 Note 2 Drain Current (pulsed) 36 (Note 3) 36 A PTOT Total Dissipation Ct T = 25°C 115 35 156 W Derating Factor 0.92 0.28 1.25 W
in „Ersatz für STB10NK60Z“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
Units D @ TC= 25°C Continuous Drain CurrenGS@ 10V 49 D @ TC= 100°C Continuous Drain CurrenGS@ 10V 35 A DM Pulsed Drain Curr nt 160 PD@T C 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V I Avalanche Curre t 25 A AR EAR Repetitive Avalanche Ene gy 9.4 mJ dv
in „Mosfet IRFZ44N 12V schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sihld24_Mosfet.pdf
V DS 60 V Gate-Source Voltage V GS ± 10 TA = 25 °C 2.5 Continuous Drain Current VGS at 5.0 V ID T A=100°C 1.8 A a Pulsed Drain Current DM 20 Linear Derating Factor 0.0083 W/°C Single Pulse Avalanche Energy E 91 mJ AS Maximum Power Dissipation T A 25 °C PD 1.3 W Peak Diode Recovery dV/dtc dV/dt 4.5
in „Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HY1403-HOOYI.pdf
150 °C TSTG Storage Temperature Range -55 to 150 °C S Diode Continuous Forward Current TC=25°C 42 A Mounted on Large Heat Sink I Pulsed Drain Current * T =25°C 140** A DM C TC=25°C 42 D Continuous Drain Current A TC=100°C 30 TC=25°C 30 P D Maximum Power Dissipation W Tc=100°C 12 RθJC Thermal Resistance-Junction
in „Alternative zu beschädigtem MOSFET?“ · Analoge Elektronik und Schaltungstechnik ·
