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PDF
BMA423.pdf
0x04 res_avg16 acc_perf_mode = 1 -> Reserved; acc_perf_mode = 0 -> average 16 samples 0x05 res_avg32 acc_perf_mode = 1 -> Reserved; acc_perf_mode = 0 -> average 32 samples 0x06 res_avg64 acc_perf_mode = 1 -> Reserved; acc_perf_mode = 0 -> average 64 samples 0x07 res_avg128 acc_perf_mode = 1 -> Reserved
in „LilyGo T-Watch 2020 v1 Micropython“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mt9v403_ds.pdf
Technology, Inc., reserves the right to change products or specifications without notice.. MT9V403_DS.fm - Rev. B 1/04 EN 32 ©2004 Micron Technology, Inc 1/2-INCH VGA (WITH FREEZE-FRAME) CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR Revision History Rev B, ...................................................
in „Wer hat Interesse an CMOS Bildsensoren?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
rfm70.c
5, MSB bytes is equal to RX_ADDR_P1[39:8] {17,0x20},//Number of bytes in RX payload in data pipe0(32 byte) {18,0x20},//Number of bytes in RX payload in data pipe1(32 byte) {19,0x20},//Number of bytes in RX payload in data pipe2(32 byte) {20,0x20},//Number of bytes in RX payload in data pipe3(32 byte) {21,0x20},//Number of bytes in RX payload in data pipe4(32 byte) {22,0x20},//Number of bytes in RX payload in data pipe5(32 byte) {23,0x00},//fifo status {28,0x3F},//Enable dynamic payload length data pipe5\4\3\2\1\0 {29,0x07} //Enables Dynamic Payload Length
in „RFM70 und ATMega16 benötige Hilfe!!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
V2Pro_Board_User_Guide_2_2.pdf
associated Virtex-II Pro FPGA pin assignments. Table 7 - User LED LED Designation Virtex-II Pro Pin # DS7 (LED1) V8 DS8 (LED2) W6 DS9 (LED3) U10 DS10 (LED4) V10 2.6 User Push Button Switches The Virtex-II Pro development board provides four user push button switches as described in the following table.
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PDF
PIC_18F8722_Data_Sheet.pdf
gives users a complete selection of clock Watchdog Timer are minimized. See speeds, from 31 kHz to 32 MHz – all without using Section 28.0 “Electrical Characteristics” an external crystal or clock circuit. for values. © 2008 Microchip Technology Inc. DS39646C-page 7 PIC18F8722 FAMILY Besides its availability
in „PIC 18F6527 mit 32MHz Takten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LMC7111BIM5X.pdf
3V L DS012352-25 DS012352-26 DS012352-27 Sourcing Output vs Sinking Output vs Gain and Phase vs Output Voltage Output Voltage Capacitive Load @ 3V DS012352-28 DS012352-29 DS012352-30 Gain and Phase vs Gain and Phase vs @ Capacitive Load 3V Capacitive Load@ 3V DS012352-31 DS012352-32 www.national.com 8 L M C 5V PERFORMANCE 7 1 1 Voltage Noise vs Common Output Voltage vs Offset Voltage vs Common T Mode Voltage @ 5V Input Voltage@ 5V Mode Voltage @ 5V n y DS012352
in „PIN Dioden Geiger“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LMC7111BIM5X.pdf
3V L DS012352-25 DS012352-26 DS012352-27 Sourcing Output vs Sinking Output vs Gain and Phase vs Output Voltage Output Voltage Capacitive Load @ 3V DS012352-28 DS012352-29 DS012352-30 Gain and Phase vs Gain and Phase vs @ Capacitive Load 3V Capacitive Load@ 3V DS012352-31 DS012352-32 www.national.com 8 L M C 5V PERFORMANCE 7 1 1 Voltage Noise vs Common Output Voltage vs Offset Voltage vs Common T Mode Voltage @ 5V Input Voltage@ 5V Mode Voltage @ 5V n y DS012352
in „Einbau-Vorverstärker für E-Gitarre, Ub = 3V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUZ71.pdf
= 0V 50 - - V DSS D GS Gate to Threshold Voltage V V = V , I = 1mA (Figure 9) 2.1 3 4 V GS(TH) GS DS D Zero Gate Voltage Drain Current I T = 25 C, V = 50V, V = 0V - 20 250 µA DSS J DS GS TJ= 125 C, V DS = 50V, GS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
in „BUZ 71 Wie anschliessen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6344pbf.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf-1228041.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
––– ––– 17.5 mΩ VGS = 10V,DI = 25A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 19 ––– ––– S VDS = 25V,DI = 25A ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Mosfet IRFZ44N 12V schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FDC638P-D.PDF
Voltage V DS = VGS ID= –250 μA –0.4 –0.8 –1.5 V ΔV GS(th) Gate Threshold Voltage ID= –250 μA,Referenced to 25°C 3 mV/°C ΔT J Temperature Coefficient R Static Drain–Source 39 48 DS(on) V GS = –4.5 V, ID= –4.5 A mΩ
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRFB3006_IR.pdf
On-Resistance vs. Temperature 16000 VGS = 0V, f = 1 MHZ 16 C = C + C , C SHORTED ID= 170A iss gs gd ds V V = 48V Crss = gd ( DS C = C + C g V DS= 30V )12000 oss ds gd l 12 F o ( C iss e c r n o i 8000 S 8 a t a e C a C G S 4 4000 Coss G V Crss 0 0 0 40 80 120 160 200 240 280 1 10 100 QG Total Gate Charge
in „Motor PWM Steuerung, Mosfet Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
A200_MCP1407-EP_MIC.pdf
protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 DS22019A-page 16 © 2006 Microchip Technology Inc. MCP1406/07 APPENDIX A: REVISION HISTORY Revision A (December 2006) • Original Release of this Document. © 2006 Microchip Technology Inc. DS22019A-page 17
in „Treiber für IRF1404 ?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
schieberegister_test.bas
$regfile = "m8def.dat" $crystal = 8000000 $baud = 9600 $hwstack = 32 $swstack = 32 $framesize = 32 Config Portd.1 = Output Config Portb.2 = Output Config Portb.1 = Output Config Pinc.5 = Input Portc.5 = 1 Config Pinc.4 = Input Portc.4 = 1 Config Pinc.3 = Input Portc.3
in „[BASCOM] Mal geht mein Taster, mal nicht“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Multi_SD_SIM.ino
57600); debugprintln(ID_ID); debugflush(); Spannungen_messen(); if (Batteriespannung > VMinimum) { DS_Temp = No_Val; Sensor_DS18B20(); Sensor_DHT(); Sensor_Si7021(); Sensor_SHT31(); Sensor_BME280(); if (DS_Temp == No_Val) DS_Temp = rtc.getTemperature(); Sensor_Licht(); Sensor_Gewicht(false); for (int
in „Wird diese if-Schleife jemals ausgeführt?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STD60N55F3.pdf
= 10V, I = 32A DS(on) resistance GS D 6.5 8.5 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit (1) Forward transconductance V =25V, I =32A 50 S gfs DS D Ciss Input capacitance 2200 pF C Output
in „Frage zu MOSFET STF60N55F3“ · Mikrocontroller und Digitale Elektronik ·
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PDF
z16c30um.pdf
Z16C30USC ZILOG USES MANUAL ADnn Data A//B, D//C /CS /SITACK /PITACK, /WR, (/RD OR /DS), DMAAcknowledge signals (Required with /DS, not with /RD.) R//W /DS or /RD Wait Mode /WAIT//RDY Acknowledge Mode Figure 2-12. A Register Read Cycle with Non-Multiplexed Data Lines UM97USC0100 2-17 ®
in „unbekanntes Bus (Frame) entziffern, brauche Hilfe.“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Microchip_AppNote_00994a.pdf
0.085 2.72 TABLE 4: OUTPUT FREQUENCY FOR 0 0 0 64 0.085 1.36 MAXIMUM CURRENT 1 0 1 64 0.17 2.72 0 0 1 32 0.17 1.36 Line Output IMAX Power Meter Frequencyof 1 1 0 32 0.34 2.72 Voltage (A) (KW) Constant K F ,F (V) OUT0 OUT1 0 1 0 16 0.34 1.36 (Hz) 1 1 1 16 0.68 2.72 220 25 5.5 100 imp/kWh 0.153 0 1 1 2048
in „Strom 10A bis 300A messen mit Tiny26“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM2661.pdf
Resistance vs Supply Voltage DS012911-7 DS012911-8 DS012911-9 Output Source Efficiency vs Load Resistance vs Output Voltage Drop Temperature Current vs Load Current DS012911-11 DS012911-12 DS012911-10 3 www.national.com 1 6 2 Typical
in „pegelanpassung analog“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLML6401.pdf
Charge ––– 2.6 3.9 V GS= -5.0V d(on) Turn-On Delay Time ––– 11 ––– V DD = -6.0V ns tr Rise Time ––– 32 ––– ID= -1.0A d(off) Turn-Off Delay Time ––– 250 ––– RD= 6.0Ω f Fall Time ––– 210 ––– RG= 89Ω Ciss Input Capacitance ––– 830 ––– V GS= 0V Coss Output Capacitance ––– 180 ––– pF V DS= -10V Crss Reverse
in „3,3 V schalten mit möglichgst geringem Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm5642.pdf
(V DS sensing), R DS-ON will show more variation than a current-sense resistor, largely due to temperature variation. R will increase proportional to temperature according to a specific DS-ON temperature coefficient. Refer to the FET manufacturer's datasheet to determine the range of R DS-ON values over operating temperature or see the Component Selection section (Equation 27) for a calculation of maximum R DS- ON. This will prevent R DS-ON variations from prematurely tripping the current
in „Komisches Verhalten von LM5642MTCX“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
4x74hct165.txt
Loop_SR: andi Daten, 0b11111110 ;lösche mal auf Verdacht das Bit 0 in temp, SER_PIN andi temp, (1<<SER_DS) ;Maskiere den In-Pin cpi temp, (1<<SER_DS) ;ist der Eingangspin auf High? brne BitNotSet_SR ;nein, wie vermutet :-) ori Daten, 0b00000001 ;Ja, das Bit ist zu setzen BitNotSet_SR: dec BitZaehler cpi
in „32 digtale Eingänge an Mega32 (Kaskadierte Schieberegister)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lm35_Temp.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Temperatursensor LM35 DZ will nicht funktionieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
01006a.pdf
WREN) CS 0 1 2 3 4 5 6 7 SCK SI 0 0 0 0 0 1 1 0 high-impedance SO © 2005 Microchip Technology Inc. DS01006A-page 3 AN1006 A page write can be accomplished by continuing to give BYTE WRITE COMMAND (OPCODE, ADDRESS AND DATA) data bytes to the device without toggling CS 32 bytes can be written to the 25LC160B
in „Infineon µC XC164D-Serie“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3205S.pdf
Temperature www.irf.com 3 IRF3205S/IRF3205L 6000 V = 0V, f = 1 MHZ 16 I = 62A GS D Ciss= Cgs + Cgd, ds SHORTED V 14 V DS= 44V 5000 Crss = Cgd ( V DS= 27V C = C + C g V DS= 11V ) oss ds gd l 12 F4000 o e Ciss V 10 n r i u c3000 S 8 p o C - 6 ,2000 Coss a C G , 4 1000 G Crss V 2 0 0 1 10 100 0 20 40 60
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FQP50N06L-244346.pdf
- V/°C Q / ΔT J Coefficient F I V = 60 V, V = 0 V -- -- 1 μA E DSS Zero Gate Voltage Drain Current DS GS T V DS= 48 V, C = 150°C -- -- 10 μA ® I V = 20 V, V = 0 V GSSF Gate-Body Leakage Current, Forward GS DS -- -- 100 nA M IGSSR Gate-Body Leakage Current, Reverse V GS= -20 V, DS = 0 V -- -- -100 nA
in „Mosfet Treiber (low side) mit current sense Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF-610-Datasheet.pdf
Zero Gate Voltage Drain Current DSS DS GS µA V DS = 160 V, VGS = 0 V, TJ= 125 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V ID= 2.0 A b - - 1.5 Ω Forward Transconductance g fs V DS= 50 V, ID= 2.0 Ab 0.8 - - S Dynamic Input
in „Schaltung für logic level to high voltage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ADC0804_NSC.pdf
Supply Voltage RD to Output Data Valid vs. Supply Voltage A vs. Load Capacitance D 0 8 4 A D C 0 0 5 DS005671-38 DS005671-40 DS005671-39 fCLK vs. Clock Capacitor Full-Scale Error vs Effect of Unadjusted Offset Error Conversion Time vs. VREF/2 Voltage DS005671-41 DS005671-42 DS005671-43 Output Current vs
in „Probleme Verständnis ADC 0804-1“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ADC0801_05.pdf
Supply Voltage RD to Output Data Valid vs. Supply Voltage A vs. Load Capacitance D 0 8 4 A D C 0 0 5 DS005671-38 DS005671-40 DS005671-39 fCLK vs. Clock Capacitor Full-Scale Error vs Effect of Unadjusted Offset Error Conversion Time vs. VREF/2 Voltage DS005671-41 DS005671-42 DS005671-43 Output Current vs
in „Verständnisfrage zum ADC080x (VIN-MIN/DC-Offset)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BST-BMP180-DS000-07.pdf
BMP180 Data sheet Document revision 2.3 Document release date 25 May 2011 Document number BST-BMP180-DS000-07 Technical reference code(s) 0 273 300 244 Notes Data in this document are subject to change without notice. Product photos and pictures are for illustration purposes only and may differ from the
in „Suche Projektpartner für Kalmanfilter-Implementierung“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
1-Wire-Networks.pdf
DS1920: QuickView -- Full (PDF) Data Sheet QuickView -- Full (PDF) Data Sheet DS1921G: DS1963L: QuickView -- Full (PDF) Data Sheet DS1963S: QuickView DS1971: QuickView -- Full (PDF) Data Sheet DS1973: QuickView
in „AVR für wenig Geld im LAN“ · Mikrocontroller und Digitale Elektronik ·
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PDF
guidelines_for_reliable_1_wire_networks.pdf
DS1920: QuickView -- Full (PDF) Data Sheet QuickView -- Full (PDF) Data Sheet DS1921G: DS1963L: QuickView -- Full (PDF) Data Sheet DS1963S: QuickView DS1971: QuickView -- Full (PDF) Data Sheet DS1973: QuickView
in „DS18B20 - 10m Leitung, Position des Widerstandes“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BS170_2N7000.pdf
N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected: 2000 V V DS (V) rDS(on) (W) V GS(th)(V) D (A) 2 @ V = 10 V 0.47 APPLICATIONS 60 GS 1.0 to 2.5 4 @ VGS = 4.5 V 0.33 D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps
in „(Mosfet-) Alternative zu ULN2003“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AG101.pdf
28 -19 Output Return Loss dB 20 Output P1dB dBm +15 +15 +14 +14 Output P1dB dBm +15 Output IP3 dBm +32.5 +33.1 +32 +32.5 Output IP3 (2) dBm +28 +32 Noise Figure dB 2.4 2.6 2.2 2.4 (3) Noise Figure dB 2.4 Supply Voltage V +4.5 +3.3 Operating Current Range mA 40 50 75 Device Current mA 50 48 Supply Voltage
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PDF
LM2576.pdf
-31 DS011476-32 Oscillator Frequency Switch Saturation Efficiency Voltage DS011476-33 DS011476-35 DS011476-34 Minimum Operating Voltage Quiescent Current Feedback Voltage vs Duty Cycle vs Duty Cycle DS011476-36 DS011476-37 DS011476-38 7 www.national.com Typical Performance Characteristics (Circuit of Figure 2) (Continued) Feedback Pin Current Maximum Power Dissipation (TO-263) (See Note 10) DS011476-4 DS011476
in „Netzteil selbstbau“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NSC-LM2576-5.pdf
-31 DS011476-32 Oscillator Frequency Switch Saturation Efficiency Voltage DS011476-33 DS011476-35 DS011476-34 Minimum Operating Voltage Quiescent Current Feedback Voltage vs Duty Cycle vs Duty Cycle DS011476-36 DS011476-37 DS011476-38 7 www.national.com Typical Performance Characteristics (Circuit of Figure 2) (Continued) Feedback Pin Current Maximum Power Dissipation (TO-263) (See Note 10) DS011476-4 DS011476
in „KFZ Spannung mit LM2576 Diode vor die Spule?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ElektronikBauteile.pdf
mittelträge 0,63A MTR. 0,63A 0,29 € 2,90 € 22 5 Sicherungshalter, 5x20mm, max. 10A-250V PL OGN-22,5 0,32 € 1,60 € 23 3 32.768kHz Temperature-Compensated Crystal Oscillator 6,04 € 18,12 € 24 5 Abdeckhaube für Sicherungshalter PL OGN-A 0,22 € 1,10 € 25 100 Metallschichtwiderstand 100 Ohm METALL 100 0,08 €
in „[V] - Elektroniksammlung“ · Markt ·
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Datei
C18-BOLT-DS18B20-FARENHEIT.c
PORTC = 0x0; //init_bolt(); //InitLCD(); //ClearScreen(); //PrintString(TEMPE); while(1) { GRADOS=ds1820_read(); //GRADOS ES VARIABLE DE PUNTO FLOTANTE FARENHEIT=((GRADOS*9)/5)+32; //Convierte a grados Farenheit entero=GRADOS; //PARTE ENTERA decimal=(GRADOS-entero)*10; //PARTE DECIMAL sprintf(array,
in „DS18B20 Tempsensor mit PIC18F - Oszillatorprobleme?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bs208.pdf
DSS drain-source breakdown −V GS= 0 200 − - V voltage −ID= 10 A −DSS drain-source leakage curren−V DS= 130 V − − 1 A V GS= 0 −DSS drain-source leakage curren−V DS= 70 V − − 25 A −V GS= 0.2 V −GSS gate-source leakage current−V GS= 20 V − − 100 nA V DS= 0 −VGS(th) gate-source threshold V GS= VDS 0.8 −
in „Mosfet BS208 sperrt nicht bei >3V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7416_datasheet.pdf
20V GS Q g Total Gate Charge ––– 61 92 ID= -5.6A Q Gate-to-Source Charge ––– 8.0 12 nC V = -24V gs DS Q gd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 18 ––– VDD = -15V tr Rise Time ––– 49 ––– ID= -5.6A ns td(off) Turn-Off Delay Time ––– 59 –––
in „Datenblatt / Prinzip richtig verstanden?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
RFM70_HH.c
, RX_ptr,0); status = SPI_send_get(FLUSH_TX, TX_ptr, RX_ptr,0); status |= STATUS_RX_DR | STATUS_TX_DS | STATUS_MAX_RT; // clear RX_DR or TX_DS or MAX_RT interrupt flag SPI_send_get(WRITE_REG|STATUS, &status, RX_ptr,1); // update status reg RFM70_disable; if (mode) status = MASK_RX_DR | EN_CRC | CRCO
in „RFM70 arbeitet nicht zuverlässig“ · HF, Funk und Felder ·
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PDF
2sk1402.pdf
breakdown voltage K1402A 650 — — Gate to source breakdown V ±30 — — V I = ±100 µA, V = 0 (BR)GSS G DS voltage Gate to source leak current IGSS — — ±10 µA V GS= ±25 V, V DS= 0 Zero gate voltage K1402 I — — 250 µA V = 500 V, V = 0 DSS DS GS drain current K1402A V = 550 V, V = 0 DS GS Gate to source cutoff voltage V 2.0 — 3.0 V I = 1 mA, V = 10 V GS(off) D DS Static drain to source K1402 R — 1.8 2.4 I = 2 A, V = 10 V *1 DS(on) D GS on state resistance K1402A — 2.0 2.6 Forward transfer admittance |yfs| 2.2 3.5 — S ID= 2 A, V DS= 10 V *1 Input capacitance Ciss
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfp260n.pdf
On-Resistanc––– ––– 0.04 VGS = 10V,DI = 28A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 27 ––– ––– S VDS = 50V,DI = 28A ––– ––– 25 V = 200V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 160V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Strom bei 50 A begrenzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IPA50R190CE-DS-v02_04-EN.pdf
DD= 50V Avalanche current, repetitive I - - 7.7 A - AR MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V DS0...400V -20 - 20 static; Gate source voltage V GS -30 - 30 V AC (f>1 Hz) Power dissipation (Full PAK) P tot - - 32 W T C25°C Operating and storage temperature T,jT stg -40 - 150 °C - Mounting torque
in „Mosfet 5R190CE“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
hmi.c
PrecenceAck = 1u; uint8_t lu8_Crc = common_Dallas_Crc(Owaf_gau8_Data, 9); if(0u == lu8_Crc) { owaf_Ds18b20_StructTemp(&Hmi_gs8_TempInt, &Hmi_gu8_TempDec, Owaf_gau8_Data); fifo_DisplayTemp(&mt_UartTransmitFifo, Hmi_gs8_TempInt, Hmi_gu8_TempDec); fifo_putv(&mt_UartTransmitFifo, "*C;"); //Hmi_gau8_Ds18b20
in „1 Wire manche Teilnehmer antworten nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
24fc256.pdf
://www.microchip.com/packaging 1998-2022MicrochipTechnologyInc.anditssubsidiaries DS20001203Y-page 17 24AA256/24LC256/24FC256 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20001203Y-page 18
in „Wodtke HP-S5 HP Er3 EEPROM Schreib-/Lesefehler“ · Haus & Smart Home ·