-
PDF
DATASHEET_ADG333A-AD-EN.pdf
D 0 V, R D 0 Ω, C L 10 nF; 10 pC max V DD= +15 V, VSS –15 V; Figure 19 OFF Isolation 72 dB typ R L 75 Ω, C L 5 pF, f = 1 MHz; V S 2.3 V rms; Figure 20 Channel-to-Channel Crosstalk 85 dB typ R L 75 Ω, C L 5 pF, f = 1 MHz; V S 2.3 V rms; Figure 21 C SOFF) 7 pF typ C D CS(ON) 26 pF typ POWER REQUIREMENTS
in „IC Analog Audio Schalter“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
2N4416.pdf
V, DS = 0 V (2N) −2 −100 −100 pA T = 150_C −4 −100 −100 Gate Reverse Current I A GSS VGS = −15 V,DS = 0 V (SST) −0.002 −1 nA TA= 125_C −0.6 Gate Operating Current I V = 10 V, I = 1 mA −20 G DG D pA Drain Cutoff
in „OP-Amp schützen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
TPCS8209.pdf
Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R DS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Y |fs 9.2 S (typ.) • Low leakage current: I = 10 μA (max) (V = 20 V) DSS DS • Enhancement mode: V th= 0.5~1.2 V (VDS = 10 V, ID= 200 μA) Absolute
in „DC/DC-Wandler von 2.4 V auf 15 V mit 25 Watt“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LM334.pdf
Performance Characteristics M / 3 Output Impedance Maximum Slew Rate 2 Linear Operation M / 3 1 M L DS005697-30 DS005697-31 Start-Up Transient Response DS005697-32 DS005697-33 Voltage Across RSET(VR) Current Noise DS005697-34 DS005697-35 www.national.com 4 L M 1 Typical Performance Characteristics (Continued
-
PDF
Wohnraumuhr1_Rev1.1.pdf
1 0 K1 m 1 3 O TME1 S1 7 1 K C 8 I R 1 KR 5 I M A D1 0 8 R3 n V K I 7 P P A L 1N4001 5 R 1k 0 / 7 DS1620 1 7 9 7 4 IC4 1 R C 9 C C Gehäuse BOPLA ET-233 1 16.75 190.5 224 112 ELV_DC2_91610DCF2 DCF1 + Sig.- C8 1 3 10µ/16V D2 D3 D4 D5 0 0 0 0 0 0 0 0 0 8 8 8 8 8 8 8 6 6 2 6 6 6 6 6 6 6 6 6 6 6 6 0 6 5
in „wohnraumuhr 2 - leiterplatte nach projekt scott huehn“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
OZ890-Datenblatt.pdf
Parameter Test Conditions MIN TYP MAX Unit Regulator Output Voltage (See Note 1) load20mA, 2.25 2.5 2.75 V 10V<Vcc<56V, CONFIDENTIAL OZ890 - DS-V1.6 Page 11 OZ890 Line Regulation (See Note 1) load5mA, 10 30 mV 10V<Vcc<56V Load Regulation (See Note 1) 0.2mA<Iload10mA 40 100 mV Vcc=52V 2.5V Current Limit
in „Schaltung für aktiven 3s Balancer gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
pic16f88.pdf
for additional information about capacitor selection. RB7 RB6 RB5 2005 Microchip Technology Inc. DS30487C-page 75 PIC16F87/88 7.8 Resetting Timer1 Using a CCP 7.11 Using Timer1 as a Real-Time Trigger Output Clock If the CCP1 module is configured in Compare mode to Adding an external LP oscillator to
in „auftrennen einer 2stelligen Dezimalzahl in asm (pic 16f88)“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
EPROM_Inhalt.txt
]------ NOP ŠKeine Operation 01 Š75+-START MOV SCON,#50Hex ŠInitialisierung serielle 02 Š98Š ŠSchnittstelle Datenein-/ausgabe 03 Š50+ ŠMode 1,(8 Bit, Receive Enable) 04 Š75+------ MOV TMOD,#10Hex ŠTimer 0 keine Funktion, 05 Š89Š ŠTimer 1 Mode 2 C/T=0, Gate=0 06 Š20+ Š 07 Š75+------ MOV PCON,#00Hex ŠSMOD=0, Teiler /2 08 Š87Š Š 09 Š00+ Š .....
in „MC 8051 Speicheranschluss“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
BF256_ON.pdf
Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (–I = –1.0 Adc, V = 0) –V 30 – — Vdc G DS (BR)GSS Gate–Source Voltage (DS = 15 Vdc,D= 200 A) –V GS 0.5 — 7.5 Vdc Gate Reverse Current (–VGS = 20 Vdc, DS = 0) –IGSS — — 5.0 nAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (Note 1.) (VDS
in „BF256, Pinbelegung unterschiedlich“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
str-x6759n_ds_en.pdf
provides a soft-switching mode to turn on the frequency internal MOSFETat close to zero voltage (V DS bottom point) Standby mode Lowers input power at very light output by use of the resonant characteristic of primary inductance load condition and a resonant capacitor. Avalanche-guaranteed MOSFET
in „Reparatur Netzteil PHILIPS HTS 8140/12“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
FAN7621-36163.pdf
r r N0.95 N0.95 0.9 0.9 -50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100 Temp ( C) Temp ( C) Figure 8. Low-Side V CC (LV CCStart vs. Temperature Figure 9. Low-Side V CC (LV )CCtop vs. Temperature © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
in „Verbindung einer Leuchtdiode mit einem Fototransistor erzeugen“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
bootloader.a51
; overlay area $nomod51 $include (ch552_keil.h) dseg at 0x08 ;these is overlay data RAM_08: ds 1 RAM_09: ds 1 RAM_0A: ds 1 RAM_0B: ds 1 RAM_0C: ds 1 ; ptr memcpy source RAM_0D: ds 1 RAM_0E: ds 1 RAM_0F: ds 1 ; memcpy size RAM_10: ds 1 RAM_11: ds 4; bseg at 0 bit00: DBIT 1 ; ????? bSoftReset: DBIT
in „uC für 0,20€ CH552 / CH554 von WCH Billig Micro mit USB Funktion, Chip vorstellung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
P-FET.pdf
Voltage V (BR)DSS -30 V ID=-250µA, VGS =0V Zero Gate Voltage Drain Current I -1 µA V =-30V, V =0V DSS DS GS Gate-Body Leakage IGSS ⫾100 nA V GS=⫾20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V ID=-250µA, VDS = VGS Static Drain-Source On-State Resistance RDS(on) 0.15 Ω V GS=-10V, D =-1.6A (1) 0.23 Ω V GS=-4.5V, D =-0.8A Forward Transconductance (3) g 1.1 S V =-10V,I =-0.8A fs DS D DYNAMIC (3) Input Capacitance C iss 330 pF V DS=-25 V, GS =0V, Output Capacitance C oss 120 pF f=1MHz Reverse Transfer Capacitance C 45 pF rss SWITCHING (2) (3) Turn-On Delay Time td(on) 2.8 ns Rise
in „Review: Spannungsversorgung 3V->5V + Ein/Ausschalter“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
8810-TuofengSemiconductor_002.pdf
Drain-Source Breakdown Voltage I =250µA, V =0V 20 V DSS D GS IDSS Zero Gate Voltage Drain Current V DS=16V, V GSV 1 µA IGSS Gate-Body leakage current VDS0V, V =GS2V ±15 µA V GS(th) Gate Threshold Voltage VDSV GS D =250µA 0.5 0.6 1 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS VGS =4.5V, D =6A 20 22 mΩ R DS(ON) Static Drain-Source On-Resistance V GS.5V, I D5.5A 28 30 mΩ g FS Forward Transconductance VDS =5V, D =6A 29 S V Diode Forward Voltage I =1.5A,V =0V 1.2 V SD S GS IS Maximum Body-Diode Continuous
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
-
PDF
PIC18Fxx2.pdf
17 15 I/O Pin Old Value New Value (output) 20, 21 Note: Refer to Figure 22-4 for load conditions. DS39564B-page 272 2002 Microchip Technology Inc. PIC18FXX2 TABLE 22-6: CLKO AND I/O TIMING REQUIREMENTS Param. Symbol Characteristic Min Typ Max Units Conditions No. 10 TosH2ckL OSC1↑ to CLKO↓ — 75 200
in „AD1 und AD2 Multiplexen (PIC18F452)“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
39662c.pdf
Application Maestro, CodeGuard, devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, the buyer s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, In-Circuit Serial hold harmless Microchip from any and all damages
in „Webserver mit XC167“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
bq24725.pdf
top DS(on) GD bottom DS(on) G The lower the FOM value, the lower the total power loss. Usually lower R DS(ON) has higher cost with the same package size. The top-side MOSFET loss includes conduction loss and
in „[V] 3St TI LiIon Lade/ Batterie-Management Chips: BQ24725RG und BQ24072RG“ · Markt ·
-
PDF
New_500V_Linear_MOSFET_for_a_120kw_active_Load.pdf
appears on virtually every power device data sheet and, athough the R and R parameters on which ΘJC DS(on) it is based are carefully measured and controlled by the manufacturer, the figure itself is derived by calculation and is seldom if ever rigorously validated. In the case of switchmode devices, FBSOA
in „Stromsenke / el. Last“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
New_500V_Linear_MOSFET_for_a_120kw_active_Load.pdf
appears on virtually every power device data sheet and, athough the R and R parameters on which ΘJC DS(on) it is based are carefully measured and controlled by the manufacturer, the figure itself is derived by calculation and is seldom if ever rigorously validated. In the case of switchmode devices, FBSOA
in „Kühlkörper bei etwa 200 Watt max Verlustleistung?“ · Mechanik, Gehäuse, Werkzeug ·
-
PDF
New_500V_Linear_MOSFET_for_a_120kw_active_Load.pdf
appears on virtually every power device data sheet and, athough the R and R parameters on which ΘJC DS(on) it is based are carefully measured and controlled by the manufacturer, the figure itself is derived by calculation and is seldom if ever rigorously validated. In the case of switchmode devices, FBSOA
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
Drehzahl-ST.asm
wr0 ; IRQ bei k = 1/2 * fpwm ldi drehzahl, dz ; nur bei 1 MHZ !!! ; Prescaler = 128 ; Fclk/128 -> DS S.119 T46, Phase Correctly PWM - ein DS. S.117 T42 ; OC2 pin 14 PB3 - HIGH = Match->TOP->Match -DS. S118 T45 ldi wr0, 0x75 ; 01110101 out TCCR2, wr0 ; ; Timer0/Counter0 einstellen ; f = 3,815 KHz ; T
in „Fehler im ASM-Code zur Motorsteuerung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
1331276981-613264.pdf
pin. 8 CSD I Corrent sense input pin. C h t i g B r n - O ©On-Bright Electronics Confidential OB_DOC_DS_333000sheet - 3 - High Performance LED Lighting Driver Functional Block Diagram qg u ▯ Œ PWM t til Figure2: OB3330 Functional Block Diagram of htC Bri On- ©On-BrigCo- 4 -nOB_DOC_DS_333000sheet OB3330
in „LED Netzteil identifizierung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
datasheet.pdf
‘in-service proven’ technology. Dimensions mm 5.0 1.6 300 typical ∅ 5.0 optional + 0 rear shaft ∅ Ds -0.013 23HS X series +0.05 ∅ 38.1 19 47.2 dimension L 20.6 57.2 Mechanical Specification: 1.8 degree high performance stepper motors motor type length Shaft number mass Uni-polar Bi-polar Rotor diameter of leads Holding Holding Inertia Torque Torque ‘L’ ‘ Ds ’ mm Mm Kg Ncm Ncm Kgcm 2 23HSX-102 41 6.35 8 0.5 37 47 0.077 23HSX-202 55 6.35 8 0.7 75 98 0.22 23HSX-206 23HSX-306 78.5 8.0 8 1.0 125 163 0.34 Electrical Specification : Uni-polaroperation Bi-polar
in „Schrittmotor -> Schrittmotorsteuerung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
STR-W6253D_PWMswitschRegulator.pdf
Pulse A 100 100.00 ) %80 t 10.00 i 0. a f A 1m r e D 1m s g C60 t it s t g e tl (o) r t r 1.00 rr R DS p e C Cu et O D40 i du f r r S a D e 0.10 p e20 T Refer to figure 1 for MOSFET SOA temperature derating coefficient 0 0.01 0 25 50 75 100 125 150 1 10 100 1000 Temperature, F (°C) Drain-to-Source VoltageDS
in „suche Diode aus Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
STR-W6253D_PWMswitschRegulator.pdf
Pulse A 100 100.00 ) %80 t 10.00 i 0. a f A 1m r e D 1m s g C60 t it s t g e tl (o) r t r 1.00 rr R DS p e C Cu et O D40 i du f r r S a D e 0.10 p e20 T Refer to figure 1 for MOSFET SOA temperature derating coefficient 0 0.01 0 25 50 75 100 125 150 1 10 100 1000 Temperature, F (°C) Drain-to-Source VoltageDS
in „Reparatur Audio-Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MPVD7N65.pdf
breakdown voltage BV I =250uA, V V DSS D GS=0V 650 - - Gate threshold voltage VGS(th) ID=250uA, V DS GS 3 4 5 V Drain-source cut-off current IDSS VDS650V, V =GS - - 1 uA Gate leakage current IGSS VDS=0V, VGS30V - - 100 nA Drain-source on-resistance R DS(ON) VGS10V, I D3.5A 1.35 (Note 3) Forward
in „Unbekannte Bauelemente“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MOSFET-Basics_AN-9010.pdf
The Capacitance between the Drain and Source. The capacitance varies due to the variation of the C ds thickness, which is the junction thickness of the p-body and the n - drift region, with the change of DS. qk ε C C = --------------------------- ds(per unit area) 2(V DS + φB ) where q: the elementary
in „MOSFET ohne Body-Diode“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MAX3949_Datenblatt.pdf
connected to V -2 +2 Input Leakage Current IH CC Input connected to GND, internal pullup µA (SDA) IIL 35 75 is 75kΩ typical Input connected to V , internal pulldown IIH CC 35 75 Input Leakage Current is 75kΩ typical (SCL, CSEL) µA I Input connected to GND -2 +2 IL Output High Voltage (SDA, FAULT) V OH External
in „MAX3949 über I2Can Arduino wird nicht gefunden“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LTC1923.pdf
losses in the application shown on the front diagonalsofthebridge.TheMOSFETsshouldbeselected for their DS(ON), gate charge and maximum V DS, VGS page of the data shee2: Input supply current, MOSFET ratings. A maximum V DS rating of 20V is more than switching losses and IR losses. sufficient for 5V and 12V
in „Peltier und PWM?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
lm5642.pdf
(V DS sensing), R DS-ON will show more variation than a current-sense resistor, largely due to temperature variation. R will increase proportional to temperature according to a specific DS-ON temperature coefficient. Refer to the FET manufacturer's datasheet to determine the range of R DS-ON values over operating temperature or see the Component Selection section (Equation 27) for a calculation of maximum R DS- ON. This will prevent R DS-ON variations from prematurely tripping the current
in „Komisches Verhalten von LM5642MTCX“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LMD18200.pdf
factory. Typical Performance Characteristics V vs Flag Current R (ON) vs Temperature R (ON) vs SAT DS DS Supply Voltage DS010568-16 DS010568-17 DS010568-18 Supply Current vs Supply Current vs Supply Current vs Supply Voltage Frequency (V S = 42V) Temperature (V S = 42V) DS010568-19 DS010568-20 DS010568-21 Current Sense Output Current Sense vs Load Current Operating Region DS010568-22 DS010568-23 www.national.com 4 M D Test Circuit 1 2 0 0 DS010568-8 Switching Time Definitions DS010568-9 Pinout Description (See Connection Diagram) it is also necessary to apply logic high
in „Halbbrücke für BLDC“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LT1930.pdf
N V I C 4.5 F P 30 LT1930 I LT1930 1.24 D 20 U 4.0 S Q 1.23 10 3.5 0 3.0 1.22 –10 –50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100 0 1 2 3 4 5 6 TEMPERATURE (°C) TEMPERATURE (°C) SHDN PIN VOLTAGE (V) 1930/A G01 1930/A G02 1930/A G03 Current Limit Switch Saturation Voltage Oscillator Frequency 0.45 2.5
in „Step up UND down DCDC für uC Versorgung - Empfehlung?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
OV5620_CLCC_DS__1.3_.pdf
Gb B Gb B Gb B Gb B Gb B Gb Gr R Gr R Gr R Gr R Gr R Gr R Gr R Gr R Gr R Gr R Gr R Gr R Gr5620CLCC_DS_009 5620CLCC_DS_006 Flash Control Output (Strobe Pin) Figure 7 Vertical 1:3 Average (Binning) The OV5620 has a Strobe mode that allows it to work with an external flash and LED. B Gb Gr R Snapshot (Frame
-
PDF
top247.pdf
currents) Y/R/F Package Current 100% (R and F 90% (for equivalent R ) • Minimizes transformer core size DS (ON) Limits package N/A*) • Optimizes efficiency for most applications Thermal Shutdown 125 °C min. 130 °C min. 75 °C • Allows higher output powers in 70 °C hysteresis hysteresis high ambient temperature
in „Hilfe bei Reparatur SNT Laderegler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
top247.pdf
currents) Y/R/F Package Current 100% (R and F 90% (for equivalent R ) • Minimizes transformer core size DS (ON) Limits package N/A*) • Optimizes efficiency for most applications Thermal Shutdown 125 °C min. 130 °C min. 75 °C • Allows higher output powers in 70 °C hysteresis hysteresis high ambient temperature
in „Hilfe bei Reparatur SNT Laderegler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
ANLOGIC_EG4S20BG256_DevBoard_V1.2.pdf
R43 SW4 1 2 1 2 KEY4 10k TS-F007 Taster R44 SW5 1 2 KEY5 1 2 10k TS-F007 Taster M1 1 R45 2 Q1 SI2300DS Q2 SI2300DS Q3 SI2300DS Q4 SI2300DS SW6 KEY6 SPI2_MISO 1L12 SPI2 MISO GND 80 DIGIT_1 3 2 DIGIT_2 3 2 DIGIT_3 3 2 DIGIT_4 3 2 1 2 10k 2 2 2 2 TS-F007 Taster JTAG_TDI 2C12 --- JTAG TDI SPI2 NSS K11 79
in „Sipeed Lichee Tang FPGA mit RISC-V Core aus China unter 20€“ · FPGA, VHDL & Co. ·
-
PDF
WZU-Rev1.3.pdf
D D1 78S05 3 6 RST TL X2-1 + IN OUT 4 5 1N4001 C5 C6 GND C7 GND TC X2-2 1000µ/25V 100n 100n AK500 DS1620 0V 0V 0V 0V 0V 0V 1 2 3 4 5 6 210 ELV_DC2_91610DCF2 DCF1 + Sig- C8 1 3 10µ/16V D3 D4 D5 D2 0 0 0 0 0 0 0 8 8 7 8 8 8 8 8 6 6 6 6 6 6 6 6 6 2 6 6 6 6 6 8 6 1 1 1 2 2 1 1 3 2 R 2 2 3 3 3 R R R R R
in „ELV - DCF Großuhr ELV9991 alias ZILOG Z86E0812PSC“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
1808131746_Diodes-Incorporated-DMN5L06VAK-7_C260916.pdf
Gate Voltage Drain Current @ T C +25°C IDSS — — 60 nA VDS = 50V, GS = 0V V = ±12V, V = 0V 1 µA GS DS Gate-Body Leakage IGSS — — 500 nA VGS = ±10V, DS = 0V 50 nA VGS = ±5V, DS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage @T = +25°C 0.49 1.0 J VGS(TH) — V VDS = VGS,DI = 250µA @T J +0°C to +
in „Suche N Mos Dual in SOT563“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
upd65.pdf
10 % 0.7 1.4 mA IDD2 HALT mode fX = 8.0 MHz, V DD = 3 V ± 10 % 0.75 1.5 mA fX = 4.0 MHz, V DD = 3 V ± 10 % 0.65 1.3 mA IDD3 STOP mode V DD = 3 V ± 10 % 1.9 9.0 A V DD = 3 V ± 10 %, T A = 25 °C 1.9 5.0 A Data Sheet U14380EJ2V0DS00 49 PD64A, 65 AC Characteristics (T A
in „Gesucht ... UPD65013 ...“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
2304140030_QX-Micro-Devices-QX2304L30T_C219035.pdf
of 14 QX2304_DS03CN (Shenzhen) Co., Ltd. www.qxmd.com.cn Machine Translated by Google QX2304 High-efficiency PFM synchronous boost DC/DC converter TO92 package dimension diagram: QX2304_DS03CN Quancore Electronics Technology
in „IC (SOT23-3?) aus Christbaumkerze identifizieren“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
Drehzahl-ST.asm
ja -> richtung rechts stellen sbi PORTD, dir ; Pin 2 (Bit3,PortD) = HIGH -> Linkslauf siehe L293D DS ldi wr0, 0x75 ; DS S91 T47 und DS L293 S9 Fig/Tab5 - Turnleft = HIGH out TCCR2, wr0 ; COM01 = 1 COM00 = 0 ; -> OCR2 - BOTTOM - CCR0 = HIGH -> OCR2 steigend -> länger LOW -> schneller rjmp richteinstend rirechts: cbi PORTD, dir ; Pin 2 = LOW -> Rechtslauf DS von L293D ldi wr0, 0x65 ; DS S91 T47 und DS L293 S9 Fig/Tab5 - Turnright = LOW out TCCR2, wr0 ; COM01 = 1 COM00 = 1 ; -> OCR2 - Bottom - CCR0 = LOW -> OCR2 steigend -> länger HIGH -> schneller richteinstend
in „Motorentreiber L293D“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BSS138-D.PDF
Semicondcutor ’s proprietary, high cell density, DMOS technology. These products have been designed to R DS(ON) 6.0Ω @ V GS = 4.5 V minimize on-state resistance while provide rugged, reliable, and fast switching performance.These • High density cell design for extremely loDS(ON) • Rugged and Reliable products
in „Wer kann Helfen versehentlicher Kurzschluss. Wer kennt dieses Bauteil?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Burr-Brown-ADS1230.pdf
200 r s 0 E -0.04 f i O -200 G -400 -0.05 -600 PGA = 64 Data Rate = 10SPS -800 -0.06 -50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100 Temperature (°C) Temperature (°C) Figure 9. Figure 10. NOISE vs INPUT SIGNAL NOISE vs INPUT SIGNAL 50 120 PGA = 64 45 Data Rate = 80SPS 40 100 ) 35 ) n n e 30 e i i N 25 N
in „Konzept für eine Waage gesucht“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
I2C_Sheet.pdf
PC0 G 13 DB6 P6 0u1 100uF R74 14 DB7 P7 BL+ 15 LED-A 10K INTRTC 8 PWM1 SP7 16 LED-K 3 SP2W VCC U12 DS3232 GND 8x2 Q6 NXV75UP R77 JP19 4 Vcc INT/SQW 5 2 1 2 J47 GND Vgs > 1V BL-SEL PB4 6 RTCRES R79 tr~4us 3 4K7 TP7 RESET- 3 15 RST PWM 1 INT/SQW 2 R89 C59 GND GND * 33 OHM, 0.5W 32KHZ OUT 1 0u1 SCL 20 LCD-BL
in „NXP PCA8574 hat Phänomen mit 2 Adressen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
CPC1981Y.pdf
BlockingVoltage vs.Temperature (V =1000V ) (Free Air, No Heat Sink) 0.21 L P 2.00 1160 1140 0.18 1.75 )P (1120 )0.15 A1.50 g A t l1100 (0.12 e1.25 o1080 g r1.00 g k0.09 C i1060 e d0.75 c L0.06 o l1040 L0.50 B 0.03 1020 0.25 1000 0 0 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 10Ps 100Ps 1ms 10ms
in „Welches SSR für Zündunterbrecher bzw. Alternativen zum SSR?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
AN-9010b_MOSFET_Basics__FAI.pdf
and the value of the capaci- tance is affected. And as we can see in the following equation, when V DS>> φB, the capacitance decreases as V increases with the relation ofC ∝ ( 1 k V ) . DS gd DS 2W d(epi.) Cgd(per unit area)C ox1 – ------------------- X where X : the length between the adjoined cells
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
pH4502.pdf
PH 4502 ORP R6 ∞ ORP 0 Ω R7 0Ω pH 510Ω Ph R7 12,5KΩ 12,5= 75 +15 Änderungen auf der Platine für die Redoxmessung Der 0Abgleich (Offset): R? = 0 Ω. Den Verstärkungsfaktor von 3 auf 1herabsetzen. R7 = 0 Ω Widerstand. R6 offen lassen. Neu kalibrieren. Die Redox-Sonde
in „Automatisierte Ozon-Wasseraufbereitung für Whirlpool“ · Haus & Smart Home ·
-
PDF
lm2731.pdf
Vin = 5V V S 0.25 C 1.226 RD A 0.2 B 1.225 E 0.15 E F 1.224 0.1 1.223 0.05 1.222 0 -40 -25 0 25 50 75 100 125 -40 -25 0 25 50 75 100 125 o o TEMPERATURE ( C) TEMPERATURE ( C) Figure 9. Feedback Voltage vs Temperature Figure 10. R (ON) vs Temperature DS 2.6 350 300 2.5 A 250 ( 2.4 I ) I : 200 L ( N 2.3 O E S 150 R R U C 2.2 100 2.1 50 0 2 -40 -25 0 25 50 75 100 125 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 o TEMPERATURE ( C) VINV) Figure 11. Current Limit vs Temperature Figure 12. R DS(ON) vs V IN 8 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments
in „[V] 13St. LM2731 0.6/1.6-MHz Boost Converters With 22-V Internal FET Switch in SOT-23 (8€)“ · Markt ·
-
PDF
lm2731.pdf
Vin = 5V V S 0.25 C 1.226 RD A 0.2 B 1.225 E 0.15 E F 1.224 0.1 1.223 0.05 1.222 0 -40 -25 0 25 50 75 100 125 -40 -25 0 25 50 75 100 125 o o TEMPERATURE ( C) TEMPERATURE ( C) Figure 9. Feedback Voltage vs Temperature Figure 10. R (ON) vs Temperature DS 2.6 350 300 2.5 A 250 ( 2.4 I ) I : 200 L ( N 2.3 O E S 150 R R U C 2.2 100 2.1 50 0 2 -40 -25 0 25 50 75 100 125 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 o TEMPERATURE ( C) VINV) Figure 11. Current Limit vs Temperature Figure 12. R DS(ON) vs V IN 8 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments
in „[V] 13St. LM2731 0.6/1.6-MHz Boost Converters With 22-V Internal FET Switch in SOT-23 (15€)“ · Markt ·
-
PDF
Funkgeraeteliste_Chirp.pdf
-Dec-2022 Yes 0.00% Kenwood_TH-D72_clone_mode @kk7ds 28-Nov-2022 Yes 0.02% Kenwood_TH-D72_live_mode @kk7ds 21-Oct-2022 Yes 0.00% Kenwood_TH-D74_clone_mode @kk7ds 30-Nov-2022 Yes 0.00% Kenwood_TH-D74_live_mode @kk7ds 20-Oct-2022 Yes 0.00% Kenwood_TH-D7G
in „Welcher USB-Adapter für Baofeng UV-5R gut?“ · HF, Funk und Felder ·