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PDF
HYG015N10NS1TA_datasheet.pdf
HYG015N10NS1TA N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/380A Tab R DS(O=1.2 mΩ(typ.)@VGS= 10V 100% Avalanche Tested Pin 8 Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) Pin 1 TOLL Applications Tab Switching application Power
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PDF
lm1881.pdf
resistance of 110°C/W, junction to ambient. (4) ESD susceptibility test uses the “human body model, 100 pF discharged through a 1.5 kΩ resistor”. (5) Machine Model, 220 pF – 240 pF discharged through all pins. Electrical Characteristics LM1881 V = 5V; R = 680 kΩ; T = 0°C to +70°C by correlation with 100%
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PDF
bso215c.pdf
sec. N - - 110 @ 6 cm 2cooling area 1; t ≤ 10 sec. N - - 62.5 @ min. footprint; t ≤ 10 sec. P - - 100 @ 6 cm 2cooling area 1; t ≤ 10 sec. P - - 62.5 Static Characteristics, at j = 25 °C, unless otherwise specified Drain- source breakdown voltage V(BR)DSS V V = 0 V, I = 250 µA N 20 - - GS D VGS = 0 V
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Schematic.pdf
CTX CTD R_Tx-1 GND XTAL2 RD (DS) CP_RD B 9 8 100nF TD- i Lan 22pF 8 23 B TX- TD- 8 3V3 19 VCC WR (R/W) CP_WR i VCC Lan Übertrager LAN 3 AVCC CS 24 CP_CS Lan Lan 20 GND INT 25 i 4 Br1 1 i 9 GND Lan ^^ + PoE+ 2 AGND MOTEN 26 C5 i D1 29 3 ^^ - 2 63V SMAJ58 GND CP2201 Thermal GND Lan Rectifier 100nF i Br2 GND 4 ^^ + 1 Lan i R1 3 2 CP_RST 3V3 ^^ - PoE- Rectifier i 3V3 10k Lan E C P C VCC C6 C7 C8 C9 100nF 100nF 100nF 2µ2 U1 L1 7 4 IN FB 220uF + GND C10 5 ON/OFF OUT 8 1 2 o 22uF 1 NC NC 2 i C11
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PDF
62761.pdf
Level-1-235C-UNLIM SN74HC02NSRG4 ACTIVE SO NS 14 2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM no Sb/Br) SN74HC02PW ACTIVE TSSOP PW 14 90 Pb-Free CU NIPDAU Level-1-250C-UNLIM (RoHS) SN74HC02PWG4 ACTIVE TSSOP PW 14 90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM no Sb/Br) SN74HC02PWLE OBSOLETE TSSOP PW 14
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MCP_Send.c
13, 3, &str[2]); write_MCP (CANINTF,0x00); // Empfangsbit löschen } void can_baudrate(unsigned int br) { switch (br) // alle Werte gelten für einen 16 MHz-Quarz des MCP2515 { case 1000 : write_MCP (CNF1, 0x00); // Setze CAN-Baudrate auf 1000 kBaud write_MCP (CNF2, 0x90); write_MCP (CNF3, 0x02); break
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PDF
TB12To5.pdf
MJC=0.2955 XCJC=0.6193 TR=1E-32 CJS=0 + VJS=0.75 MJS=0.333 FC=0.9579 Vceo=45 Icrating=100m + mfg=Philips) .model BC327 PNP( + IS=2.69972e-13 BF=255 NF=1.02306 VAF=10 IKF=1.61069 + ISE=1.54904e-10 NE=2.52512 BR=2.08944 NR=1.06916 VAR=100 + IKR=10 ISC=8.82272e-11 NC=3.4075 RB=5.73192 IRB=0.1
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PDF
TCA9406_I2C_translator.pdf
Requires Login) TCA9406DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM & no Sb/Br) TCA9406DCUR ACTIVE US8 DCU 8 3000 Green (RoHS CU NIPDAU Level-1-260C-UNLIM & no Sb/Br) TCA9406YZPR ACTIVE DSBGA YZP 8 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM & no Sb/Br) (1The marketing status values
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PDF
nFET_ZXM61N02FTA.pdf
Refer Note (a) t ) a ( ( 0.8 t n Refer Note (b) e 1 t Refer Note (a) r a 0.6 u i C i i DC D 0.4 r 100m 1s e - 100ms w D 11ms o 0.2 I P 100us a 10m M 0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve ) 180 Refer Note (
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PDF
ZXM61N02F-56180.pdf
Refer Note (a) t ) a ( ( 0.8 t n Refer Note (b) e 1 t Refer Note (a) r a 0.6 u i C i i DC D 0.4 r 100m 1s e - 100ms w D 11ms o 0.2 I P 100us a 10m M 0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve ) 180 Refer Note (
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PDF
ZXM61N02F-56180.pdf
Refer Note (a) t ) a ( ( 0.8 t n Refer Note (b) e 1 t Refer Note (a) r a 0.6 u i C i i DC D 0.4 r 100m 1s e - 100ms w D 11ms o 0.2 I P 100us a 10m M 0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve ) 180 Refer Note (
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PDF
ZXM61N02F-56180.pdf
Refer Note (a) t ) a ( ( 0.8 t n Refer Note (b) e 1 t Refer Note (a) r a 0.6 u i C i i DC D 0.4 r 100m 1s e - 100ms w D 11ms o 0.2 I P 100us a 10m M 0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve ) 180 Refer Note (
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PDF
BD142_Comset.pdf
noted Symbol Ratings Test Condition(s) Min Typ Mx Unit Collector-Emitter I =200 mA, I =0 45 V V CEO(BR) Breakdown Voltage (*) C B Collector-Emitter I =100 mA, V =-1.5 V V CEX(BR) Breakdown Voltage (*) C BE 50 V Collector-Emitter Saturation V CE(SAT) Voltage (*) C =4 A,BI =0.4 A - - 1.1 V Collector-Emitter Cutoff VCE100 V ICEX Current VBE=-1.5 V - - 2 mA Emitter-Base Cutoff Current IEBO VEB7 V - - 1 mA V BE Base-Emitter Voltage (*) C =4.0 A,CE =4.0V - - 1.5 V COMSET SEMICONDUCTORS 2/3 BD142 Symbol Ratings Test Condition
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PDF
12062017_Schaltplan.pdf
IC2 X2-7 S 5 2N7002 1 2 8 M 1 2 C +VS VO 4 MSTBV4 Z-SIGNALX2-8 +5V 4 3 2 1 R GND / +5V GND GND X3-4 BR_LED- 9 0 3 3 +5V/2.8A X2-9 3 9 n LM35CZ X3-3 BR_LED+ + C 0 1 GND/2.2C X2-10 10 1 1 2 C C 2 X3-2 BR_SW+ MSTBA10 0.3 A 3 4 4 N 3 N 7 + 5 1 LP2950CDT-3.0 5 6 DI DI R 1 X3-1 BR_SW- GND / C 2 2 7 8 LCD Schalter
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sniu023.pdf
Capacitance and 6 V Breakdown, 1 6 Channel, -40 to +125 degC, 2-pin X2SON (DPY), Green (RoHS & no Sb/Br) D5 100 V Diode, Ultrafast, 100V,SOD-123 1N4148W-7-F 1 0.15A, SOD-123 D10, D11, D12 3 Yellow LED, Yellow, SMD Yellow LED SML-P12YTT86 FID1, FID2, FID3 Fiducial mark. There is Fiducial N/A 3 nothing to
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PDF
IPB026N06N.pdf
at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V (BR)DSS VGS =0 V, D =1 mA 60 - - V Gate threshold voltage V GS(th) VDS=V GS, D =75 µA 2.1 2.8 3.3 I VDS=60 V, V GS=0 V, Zero gate voltage drain current DSS Tj=25 °C - 0.5 1 µA VDS=60 V, V GS=0 V, - 10 100
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hardware_t.cpp
, unsigned long *DataArray1, unsigned int count) { asm(" CMPI %i0, 0x01 ; Is it channel 1 IFS cc_z BR lpr1ch1n NOP CMPI %i0, 0x02 ; Is it channel 2 IFS cc_z BR lpr1ch2n NOP CMPI %i0, 0x03 ; Is it channel 3 IFS cc_z BR lpr1ch3n NOP CMPI %i0, 0x04 ; Is it channel 4 IFS cc_z BR lpr1ch4n NOP lpr1ch1n: PFX
in „Wittig(welec) DSO W20xxA Open Source Firmware (Teil4)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ELS-450.pdf
Note AN-45-002 on our web site. Typical Performance Data FREQ. PHASE SHIFT RETURN LOSS (MHz) (Deg.) (dBr) Vc=0.5V Vc=10V Vc=25V Vc=0.5V Vc=10V Vc=25V 0°C 50°C @ 0°C @ 0°C @ 0°C @+ 50°C @+50°C @ +50°C 100.00 196.87 199.96 -10.11 -9.74 -9.73 -10.14 -9.82 -9.81 137.50 299.53 308.52 -10.61 -9.83 -9.70 -10.90
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PDF
irl7486mpbf-936689.pdf
IRL7486MTRPbF 1000 1000 VGS VGS TOP 15V TOP 15V 6.0V 10V A 5.0V A 6.0V t 4.5V t 4.5V e 4.0V e 4.0V u 100 3.5V r 3.5V C BOTTOM 3.0V C BOTTOM 3.0V e e u r 100 o o - 3.0V - 3.0V - - i 10 i r r , , ID I 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C Tj = 150°C 1 10 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source
in „Reparatur Makita XWT08Z (DTW1002Z)“ · Analoge Elektronik und Schaltungstechnik ·
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qsort.html
:pointer} img,object,embed{max-width:100%;height:auto} object,embed{height:100%} img{-ms-interpolation-mode:bicubic} #map_canvas img,#map_canvas embed,#map_canvas object,.map_canvas img,.map_canvas embed,.map_canvas object{max-width:none!important
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PDF
BC546-D.PDF
Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage V V (I = 1.0 mA, I = 0) BC546 (BR)CEO 65 − − C B BC547 45 − − BC548 30 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC= 100 mAdc) BC546 80 − − BC547 50 − − BC548 30 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE= 10 mA,CI
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PDF
C5353-Toshiba.pdf
Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 720 V,EI = 0 ― ― 100 μA Emitter cut-off current EBO VEB = 7 V,CI = 0 ― ― 10 μA Collector-base breakdown voltage V (BR) CBO C = 1 mA,EI = 0 900 ― ― V Collector-emitter breakdown voltageV (BR) CEO C = 10 mA, B = 0 800 ― ―
in „WAN NIEN Netzteil Bauteilkunde :)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
oncilla_schaltplaene.pdf
R13 R48 470R 470K C? R14 220pF 6K8 Q9B Q9A 2N2920 2N2920 Q1A Q1B 2N2920 2N2920 -25V CW R12 CR11 POT 100R Uz = 6,7V FCT1035 CR3 BR22 R22 1N3595 0R0 90R9 R40 R41 BR23 R23 470K 10K 0R0 182R C Q2 R46 C 2N3565 POT 10K BR24 R24 0R0 332R +25V CR4 FD100 R45 R47 249K 10K R3 R25 15K 6K34 0.1% -25V -25V R?? CR10
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PDF
Square2Sinus_UAF42.pdf
(6) (3) (4/5) UAF42AP ACTIVE PDIP N 14 25 Green (RoHS CU NIPDAU N / A for Pkg Type UAF42AP & no Sb/Br) UAF42APG4 ACTIVE PDIP N 14 25 Green (RoHS CU NIPDAU N / A for Pkg Type UAF42AP & no Sb/Br) UAF42AU ACTIVE SOIC DW 16 40 Green (RoHS CU NIPDAU Level-3-260C-168 HR -25 to 85 UAF42AU & no Sb/Br) UAF42AUE4
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attachment-collector.user.js
document.createElement("div"); div.style.cssFloat = "left"; div.style.border = "1px solid black"; div.style.width = "100%"; //Content var gotoLink = atts[i].parentNode.firstElementChild.firstElementChild.firstElementChild.cloneNode(true); //Yep. It works. Check the DOM :D gotoLink.name = ""; //Remove anchor div.appendChild
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attachment-collector.user.js
document.createElement("div"); div.style.cssFloat = "left"; div.style.border = "1px solid black"; div.style.width = "100%"; //Content var gotoLink = atts[i].parentNode.firstElementChild.firstElementChild.firstElementChild.cloneNode(true); //Yep. It works. Check the DOM :D gotoLink.name = ""; //Remove anchor div.appendChild
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attachment-collector.user.js
document.createElement("div"); div.style.cssFloat = "left"; div.style.border = "1px solid black"; div.style.width = "100%"; //Content var gotoLink = atts[i].parentNode.firstElementChild.firstElementChild.firstElementChild.cloneNode(true); //Yep. It works. Check the DOM :D gotoLink.name = ""; //Remove anchor div.appendChild
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attachment-collector.user.js
document.createElement("div"); div.style.cssFloat = "left"; div.style.border = "1px solid black"; div.style.width = "100%"; //Content var gotoLink = atts[i].parentNode.firstElementChild.firstElementChild.cloneNode(true); //Yep. It works. Check the DOM :D gotoLink.name = ""; //Remove anchor div.appendChild(document.createTextNode
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Datei
attachment-collector.user.js
document.createElement("div"); div.style.cssFloat = "left"; div.style.border = "1px solid black"; div.style.width = "100%"; //Content var gotoLink = atts[i].parentNode.firstElementChild.firstElementChild.cloneNode(true); //Yep. It works. Check the DOM :D gotoLink.name = ""; //Remove anchor div.appendChild(document.createTextNode
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attachment-collector.user.js
document.createElement("div"); div.style.cssFloat = "left"; div.style.border = "1px solid black"; div.style.width = "100%"; //Content var gotoLink = atts[i].parentNode.parentNode.firstElementChild.firstElementChild.cloneNode(true); //Yep. It works. Check the DOM :D gotoLink.name = ""; //Remove anchor div.appendChild(document.createTextNode
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192.168.4.1.htm
background-color: aliceblue; } table { font-family: arial, sans-serif; border-collapse: collapse; width: 100%; } input{ width:96%; margin: 1%; font-size: 1.2em; padding: 1%; } th { border: 1px solid #dddddd; text-align: center; font-size: 1.1em; font-weight: bold; background:#000; color:white; padding: 1px
in „Absturz beim ESP8266“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN443.pdf
temperature (Fig.4). With k = 0.8 Generally, the manufacturer specifies a maximum value I RM at VRRM at Tj=100⋅C, in the data sheet. I When we know the operating junction temperature (Tj), it is possible to calculaRM Iy using the following relation : IRM RM (Tj) =RM(100⋅C) exp[-0.054(100-Tj)] IR Figure 4 : Reverse
in „Dioden in Reihe, Ausgleichswiderstände“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datenblatt_THS4531.pdf
unless otherwise noted. TEST PARAMETER CONDITIONS MIN TYP MAX UNITS LEVEL (1) AC PERFORMANCE V OUT= 100 mV PPG = 1 34 V = 100 mV G = 2 16 Small-signal bandwidth OUT PP, MHz V OUT= 100 mV PPG = 5 6 V OUT= 100 mV PPG = 10 2.7 Gain-bandwidth product V = 100 mV , G = 10 27 MHz OUT PP Large-signal bandwidth
in „Symmetrischer Filter, FilterPro, THS4531“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF840STM.pdf
DDr= 50 V) 520 mJ ELECTRICAL CHARACTERISTICS (T CASE = 25 ±C UNLESS OTHERWISE SPECIFIED) OFF ( s ) V(BR)DSS Drain-sourceeter D = 250 µA,GSn= 0ions 500. Typ. Max. cUVit Breakdown Voltage d u IDSS Drain CurrentGSV= 0) VDS= Max Rating, T = 125 ±C P ro 1 s µ) IGSS Gate-body Leakage VGS= ² 20V C te ²100 t(
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PDF
BSS169.pdf
, at j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS VGS =-10 V, D =250 µA 100 - - V Gate threshold voltage V GS(th) VDS=3 V, ID=50 µA -2.9 -2.2 -1.8 Drain-source cutoff current I VDS=100 V, - - 0.1 µA D(off) VGS =-10 V, Tj=25 °C VDS=100 V, - - 10
in „Strombegrenzung mit Fet um Akku zu laden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IPD180N10N3_G-DS-v02_03-en.pdf
, at j =25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS VGS =0 V, D =1 mA 100 - - V Gate threshold voltage V GS(th) VDS=V GS, D =33 µA 2 2.7 3.5 VDS=100 V, V GS =0 V, Zero gate voltage drain current IDSS T =25 °C - 0.1 1 µA j V =100 V, V =0 V, DS GS -
in „MosFet; unterschiedliche Schaltzeiten aus Datenblatt und Simulation“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPD053N06N_Infineon.pdf
at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V (BR)DSS VGS =0 V, D =1 mA 60 - - V Gate threshold voltage V GS(th) VDS=V GS, D =36 µA 2.1 2.8 3.3 I VDS=60 V, V GS=0 V, Zero gate voltage drain current DSS Tj=25 °C - 0.5 1 µA VDS=60 V, V GS=0 V, - 10 100
in „12V mit Logic Mosfet schalten - funktioniert nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BZW06.pdf
) Verlustleistung im Dauerbetrieb 2 Peak forward surge current, 60 Hz half sine-wave T A 25°C IFSM 100 A ) Stoßstrom für eine 60 Hz Sinus-Halbwelle 2 Max. instantaneous forward voltage IF= 50 A V BR200 V VF < 3.0 V ) Augenblickswert der Durchlass-Spannung V > 200 V VF < 6.5 V 2) BR Operating junction
in „Z Dioden mit hoher Impulsfestigkeit“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF830.pdf
Voltage 〉 20 V o ID Drain Current (continuous) at c = 25 C 4.5 A ID Drain Current (continuous) at c = 100 C 2.9 A DM ( ) Drain Current (pulsed) 18 A P Total Dissipation at T = 25 C 100 W tot c Derating Factor 0.8 W/oC dv/dt() Peak Diode Recovery voltage slope 3.5 V/ns Tstg Storage Temperature -65 to 150
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DRV8825-Datasheet.pdf
158 58 –94% 34% 160 59 30 –96% 29% 163 60 –97% 24% 166 61 31 16 –98% 20% 169 62 –99% 15% 172 63 32 –100% 10% 174 64 –100% 5% 177 65 33 17 9 5 –100% 0% 180 66 –100% –5% 183 67 34 –100% –10% 186 68 –99% –15% 188 69 35 18 –98% –20% 191 70 –97% –24% 194 71 36 –96% –29% 197 72 –94% –34% 200 73 37 19 10 –92%
in „Nano Shield zerstört Nano“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Bourns_SRF703A.pdf
“halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less.Specifications are subject to change without
in „Trafo-Treiber für DC/DC-Wandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2201210930_HUAYI-HY3215W_C2965569.pdf
reflow teUAeYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). H UAYI reserves the right to make changes, corrections, enhancements, modifications
in „Ersatz Mosfet für 6kw Wechselrichter "Reliable/WZRELB"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ga1.pdf
100 V =V 90 V = 5VEF V =10V 80 V =15V: No Oscillation ) KA A 70 ( n 60 r u Stable Stable C 50 d h 40 a C 30 20 10 0 1E-3 0.01 0.1 1 10 100 Load Capacitance ( F) AZ431-A 8 of 19 March 2018 Document number
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PDF
NTD4963N-D.PDF
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V,DI = 250 mA 30 V Drain−to−Source Breakdown Voltage V(BR)DSS/ 25 mV/°C Temperature Coefficient TJ Zero Gate Voltage Drain Current IDSS VGS = 0 V, T J 25°C 1.0 V DS= 24 V mA TJ= 125°C 10
in „Vergleichsmosfet NTD 4963N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BFG591.pdf
CHARACTERISTICS Tj= 25 C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC= 0.1 mA; IE= 0 20 V V(BR)CES collector-emitter breakdown voltageIC= 10 mA; IB= 0 15 V V(BR)EBO emitter-base breakdown voltage IE= 0.1 mA; IC= 0 3 V
in „UKW-Prüfsender: Diverse Fragen!“ · HF, Funk und Felder ·
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Bild
Telefunken Radio mit Skala und Lineal
M kHz 1600 1300 1000 800 700 600 520 kc AM M:K-U BR BREMEN HOFY... MAILAND HL... RAS... NDR LUXEMBG RHEIN MUC... BBC... FRANKFURT BR DEUTSCHL... KLAHR... STUTT... DEUTSCHL... K MHz 12 11 10 9 8 7 6.5 SW U MHz 88 91 100 103 106 08 Mc FM KANAL 5 10 20 30
in „[VS] altes Radio Telefunken banjo automatic U/K/M“ · Markt · · Fotos
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Datei
main.cpp
board with a initial periodic rate of 1.0s. * Using buttons flash rate can be adjusted in steps of 100ms. Use Button1 (P15.13) to increase flash rate. * Use Button2 (P15.12) to decrease flash rate. * * History <br> * * Version 1.0.0 Initial <br> * */ #include <XMC4700.h> #include "xmc_ccu4.h" #include
in „Wie initialisiere ich bei XMC47 und PlatformIO die Interrupts“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FS14KM-9.PDF
ELECTRICAL CHARACTERISTICS (Tch = 25°C) Limits Symbol Parameter Test conditions Unit Min. Typ. Max. V (BR) DSSDrain-sourcebreakdownvoltagD = 1mA, GS = 0V 450 — — V V (BR) GSSGate-sourcebreakdownvoltageG = ±100 A, DS = 0V ±30 — — V IGSS Gate-source leakage currentVGS = ±25V, DS= 0V — — ±10 A IDSS Drain-source
in „High speed switching mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
78KSeries.pdf
manipulation instructions] SUB ... 68 SUBC ... 69 PUSH ... 98 AND ... 70 POP ... 99 OR ... 71 MOVW SP, AX ... 100 XOR ... 72 MOVW AX, SP ... 100 CMP ... 73 [Unconditional branch instruction] [16-bit operation instructions] BR ... 102 ADDW ... 75 SUBW ... 76 [Conditional branch instructions] CMPW ... 77 BC ... 104
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Datei
hamegHM605_bom.txt
entsteht ein Foldback. Ob IC2500 (TL430) funktionert, sieht man an den Spannungen 1,25V und 19,0V. BR2500 B380C1500 BR2501 B380C1500 C2500 220µ160V C2501 220µ160V C2502 1000µ25V C2503 0,1µ C2504 10µ40V C2505 22n C2506 0,1µ C2507 1000µ25V C2508 10µ?40V C2509 22n C2510 1000µ25V C2511 0,1µ C2512 10µ?40V
in „Hameg HM605 X/Y Ablenkung defekt“ · Analoge Elektronik und Schaltungstechnik ·
