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CET_CEU3252.PDF
G GD S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc= 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V 30 V DS Gate-Source Voltage VGS –20
in „Was ist das für ein Bauteil "3252 914AG" ?“ · Analoge Elektronik und Schaltungstechnik ·
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Capacitive_Touch_Sensor_Design_Guide_AN2934.pdf
separation to accommodate a dense user interface layout. © 2020 Microchip Technology Inc. Application Note DS00002934B-page 7 AN2934 Self-Capacitance Sensors Figure 1-9. Touch Key Dimensions Table 1-1. Touch Key Dimensions Min. Typical Max. Height (H) 8 mm 12 mm 20 mm Width (W) 3 mm 6 mm 20 mm Separation (S)
in „Wie realisiert man Sensortasten?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLML6244TRPBF_Datenblatt.pdf
PD - 97535A IRLML6244TRPbF ® HEXFET Power MOSFET V DS 20 V V GS Max ±12 V * R DS(on) max 21.0 m (@V GS = 4.5V) ' R DS(on) max 27.0 m 6 Micro3TM (SOT-23) (@V GS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features
in „passender FET wie beschalten?“ · Analoge Elektronik und Schaltungstechnik ·
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DS337_2.pdf
implementation of a The QBT37-XXX and QBR37-XXX modules will simple telemetry link at data rates up to 20Kbits/s. suit one-to-one and multi-node wireless links in applications including building and car security, Available for operation between 433.075 and remote industrial process monitoring and 434.725
in „RFM12 - Funkmodul“ · Mikrocontroller und Digitale Elektronik ·
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2sk3115.pdf
SOURCE ON-STATE GATE TO SOURCE VOLTAGE RESISTANCE vs. DRAIN CURRENT - - c c 2.0 a Pulsed a Pulsed i i s 2.0 s R R 1.6 t ID= 6.0 A t t 3.0 A t VGS = 10 V - - 1.2 20 V n n e e r r o 1.0 u 0.8 S S t t i i r r 0.4 D D n ) ( 0 ( 0 D 0 4 8 12 16 20 D 1.0 10 100 R R V GS- Gate to Source Voltage - V ID- Drain
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
doc6241-1369051.pdf
SPCK PB14 PC14 PB14 A14 PC14 D14 PA15 TF PB15 PC15 PB15 A15 PC15 D15 PA16 TK PB16 PC16 PB16 A16 PB18 D16 PA17 TD PB17 PC17 NANDOE PB17 A17 PB19 D17 PA18 PB18 NANDCS PC18 NANDWE PC16 A18 PB20 D18 PA19 PB19 RDYBSY PC19 PC17 A19 PB21 D19 PA20 NCS2 PB20 PC20 PC18 A20 PB22 D20 PA21 PB21 PC21 NWE PC19 A21
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irl2203npbf.pdf
TOP 10V ) 4.5V A 4.5V ( 3.5V t 3.5V n 3.3V n 3.3V r BOTTOM2.7V r BOTTOM2.7V u100 u100 C C c r u u S S 2.7V o o - n a 10 a 10 r 2.7V D , , D ID I 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 C TJ= 175 C 1 J 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS
in „IRL2203N defekt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NTD4963N-D.PDF
3.5 Total Gate Charge QG(TOT) V GS= 10 V, DS = 15 V,DI = 30 A 16.2 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time d(ON) 12 Rise Time r 20 VGS = 4.5 V,DS = 15 V, ns Turn−Off Delay Time td(OFF) ID = 15 A, G = 3.0 W 14 Fall Time f 3 5. Pulse
in „Vergleichsmosfet NTD 4963N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PSMN3R7-100BSE.pdf
source-drain voltage IS= 25 A; VGS = 0 V; Tj= 25 °C; Fig. 17 - 0.79 1.2 V rr reverse recovery time IS= 25 A; dS /dt = -100 A/µs;GS = 0 V; - 70 91 ns Q recovered charge VDS = 50 V; Fig. 18 - 195 254 nC r PSMN3R7-100BSE All information provided in this document is subject to leNexperia B.V. 2018. All rights reserved
in „Mysteriöser Mosfet-Tod und der Spirito-Effekt“ · Analoge Elektronik und Schaltungstechnik ·
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RequiresAcrobat6.pdf
from http://www.datasheetarchive.com. GF9926 Dual N-Channel Enhancement-Mode MOSFET LowV GS(th) V DS 20V R DS(ON) 30 ΩmI 6.0AD H C ® E N T R E T F D1 D1 D2 D2 E N 8 7 6 5 G SO-8 0.189 (4.80) Q1 Q2 8 5 1 2 3 4 0.157 (3.99) 0.150 (3.81) S1 G1 S2 G2 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches 0.05
in „Ersatz-MosFet für GF9926“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
9.1436B IRF7314 PRELIMINARY ® HEXFET Power MOSFET l GenerationVTechnology l Ultra Low On-Resistance S1 1 8 D1 V = -20V l Dual P-Channel MOSFET G1 2 7 D1 DSS l Surface Mount S2 3 6 D2 l Fully Avalanche Rated G2 4 5 D2 R = 0.058 DS(on) Top View Description FifthGenerationHEXFETsfromInternationalRectifier
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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irf7314.pdf
9.1436B IRF7314 PRELIMINARY ® HEXFET Power MOSFET l GenerationVTechnology l Ultra Low On-Resistance S1 1 8 D1 V = -20V l Dual P-Channel MOSFET G1 2 7 D1 DSS l Surface Mount S2 3 6 D2 l Fully Avalanche Rated G2 4 5 D2 R = 0.058 DS(on) Top View Description FifthGenerationHEXFETsfromInternationalRectifier
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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Service_Guide_DS1000E.pdf
typical) applicable for screen) the signal of rising andEXT ± (6% of setting + 200 mV) falling time ≥20ns Service Guide for DS1000E, DS1000D Series 1-3 RIGOL Chapter 1 Specifications Normal mode: pre-trigger (storage depth/ 2*sampling Trigger Offset rate), delayed trigger 1s Slow Scan mode: pre-trigger
in „Rigol 1052e: Akkubetrieb zurüsten“ · Mikrocontroller und Digitale Elektronik ·
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ds1308.pdf
TA= -40NC to +85NC, unless otherwise noted.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS DS1308-18 1.71 1.8 5.5 Operating Voltage Range VCC DS1308-3 2.7 3.0 5.5 V DS1308-33 3.0 3.3 5.5 Battery Voltage VBAT 1.3 5.5 V Logic 1 Input V 0.7 x VCC + V IH VCC 0.3 0.3 x Logic 0 Input VIL -0.3 VCC V
in „[V] kleines Konvolut ältere DIL / DIP ICs (8€)“ · Markt ·
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ATtiny416_50002683A.pdf
of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM
in „Neue 8-Bit Tinys vorgestellt: 417/814/816/817“ · Mikrocontroller und Digitale Elektronik ·
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SI4946BEY.pdf
0.100 1200 1000 Ω 0.080 C m iss e F n ( 800 t 0.060 c i a e VGS = 4.5 V c 600 - a O a -) 0.040 - o 400 S V = 10 V C D GS R 0.020 200 C oss 0.000 0 C rss 0 5 10 15 20 25 30 0 10 20 30 40 50 60 D - Drain Current (A) V DS- Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.2 D = 5.3 A D = 5.3 A 2.0 V 8 e a c 1.8 o a VGS = 10 V V V DS= 30 V i ) 1.6 c 6 e e u R l S V DS= 48 V n m 1.4 VGS = 4.5 V o - o e 4 n ( a ( 1.2 G D S R 1.0 G 2 V 0.8 0 0.6 0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 175 Qg- Total Gate Charge (nC) T J- Junction
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TBD62783AFG_datasheet_en_20160511.pdf
FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 TBD62783AFNG Pin connection (top view) TBD62783AFWG Pin connection may be simplified for explanatory purpose. P-SOP18-0812-1.27-001 Weight P-DIP18-300-2.54-001 : 1.3g (Typ.) SOP18-P-375-1.27 : 0.41g (Typ.) SSOP18-P-225-0.65 : 0.09g (Typ.) P-SOP18-0812-1.27-001 : 0.48g (Typ.) 1 2016-05-11 © 2016 TOSHIBA Corporation TBD62783APG/FG/FNG/FWG Pin explanations
in „Treiber Pendant zu ULN2803“ · Mikrocontroller und Digitale Elektronik ·
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K4097.pdf
I =5A V R =40Ω RG IN L D VOUT PW=10µs 2SK4097LS D.C.≤0.5% 10V V 0V 50Ω DD G 2SK4097LS P.G R GS=50Ω S No.A0775-2/5 2SK4097LS I -- V I -- V 30 D DS 30 D GS Tc=25°C V DS =20V 25 25 Tc= --25°C 15 V 25°C A 1 0V A - 20 8V - 20 ID ID 7 5°C t t e 15 e 15 u u C C a 10 a 10 r r D D 6V 5 5 V =5V GS 00 5 10 15 20 25 30 00 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, V DS -- V IT12372 Gate-to-Source Voltage, V GS -- V IT12373 R DS (on) -- V GS R DS (on) -- Tc 2.0 1.6 ID= 5 A 1.8 1.4 Ω Ω - 1.6 - ) ) 1.2 o
in „MOSFET (K4097) Ersatztyp“ · Analoge Elektronik und Schaltungstechnik ·
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IRF7416_datasheet.pdf
= 0V, f = 1MHz 20 I = -5.6A GS D C iss= C gs+ C gd , Cds SHORTED ) C rss= C gd ( V = -24V C oss= C ds+ C gd e16 DS 3000 g V DS = -15V F l p o ( V c Ciss c12 a u i 2000 o a Coss - p t a e 8 , a C G 1000 , Crss S VG4 -
in „Datenblatt / Prinzip richtig verstanden?“ · Mikrocontroller und Digitale Elektronik ·
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IPB180P04P4.pdf
Drain-source breakdown voltage V (BR)DSSV GS=0V, ID= -1mA -40 - - V Gate threshold voltage V GS(th) V DS=V GS, D =-410µA -1.2 -1.7 -2.2 V DS=-32V, V GS=0V, Zero gate voltage drain current IDSS T =25°C - -0.1 -1 µA j V DS=-32V, V GS=0V, 2) - -20 -200 T j125°C I V =-16V, V =0V Gate-source leakage current
in „wie pMOSFET für Strombegrenzung kühlen“ · Analoge Elektronik und Schaltungstechnik ·
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1.5KE400CA.pdf
14.5 103.0 0.073 1.5KE11A 1.5KE11CA 9.40 10.50 11.60 1.0 5.0 15.6 96.0 0.075 1.5KE12A 1.5KE12CA 10.20 11.40 12.60 1.0 5.0 16.7 90.0 0.078 1.5KE13A 1.5KE13CA 11.10 12.40 13.70 1.0 5.0 18.2 82.0 0.081 1.5KE15A 1.5KE15CA 12.80 14.30 15.80 1.0 5.0 21.2 71.0 0.084 1.5KE16A 1.5KE16CA 13.60 15.20 16.80 1.0 5.0 22.5 67.0 0.086 1.5KE18A 1.5KE18CA 15.30 17.10 18.90 1.0 5.0 25.2 59.5 0.088 1.5KE20A 1.5KE20CA 17.10 19.00 21.00 1.0 5.0 27.7 54.0 0.090 1.5KE22A 1.5KE22CA 18.80 20.90 23.10 1.0 5.0 30.6 49.0 0.092 1.5KE24A 1.5KE24CA 20.50
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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Micrel.pdf
facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California the U.S.A. and India. The Company’s quality system processes and procedures Silicon Storage Technology is a registered trademark of Microchip are for its PICCUs and dsPIC DSCs, K EEL OQ® code hopping Technology
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DS_SJEP120R100_rev2.1.pdf
PRELIMINARY SJEP120R100 Figure 7. Drain-Source On-resistance Figure 8. Drain-Source On-resistance R DS(ON) f(j);DI = 10A; parameter:GS RDS(ON)= fGS );DI = 10A;jT = 25 C 0.40 0.094 0.092 Ω 0.35 ) ( 5mA ( 0.090 c 0.30 e a 25mA n 0.088 i t e 0.25 100mA s 0.086 - r O n 0.084 e 0.20 O r c 0.082 o 0.15 u -
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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AD2500_Macro_Assembler_V402_Manual.pdf
................. Single File With One Section Used For Reference Only ....................... 2 - 18 Indirect Linking ..............................................................2..- 20........... Linker Symbol Table Output Formats .............................................................. Symbol
in „2500 A.D. Z80 Macro Assembler“ · Mikrocontroller und Digitale Elektronik ·
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73493.pdf
Transconductance gfs V DS= - 15 V,DI = - 20 A 75 S b Dynamic Input Capacitance C iss 11300 Output Capacitance Coss V DS = - 25 V,GS = 0 V, f = 1 MHz 1510 pF Reverse Transfer Capacitance C rss 1000 Q Total Gate Charge g 185 280 Gate-Source Charge Q V = - 20 V, V = - 10 V, I = - 110 A 48 nC gs DS GS D Gate-Drain Charge Q gd 42 Gate Resistance Rg f = 1 MHz 4.0 Ω Turn-On Delay Time d(on) 25 40 Rise Time t V = - 20 V, R = 0.18 Ω 290 440 r DD L ns Turn-Off Delay
in „Messungen mit DMM Dual-Slope Verfahren am PMOS“ · Analoge Elektronik und Schaltungstechnik ·
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MCP794xx.pdf
unknown bit 7-6 Unimplemented: Read as ‘0’ bit 5-4 DATETEN<1:0>: Binary-Coded Decimal Value of Date’s Tens Digit Contains a value from 0 to 3 bit 3-0 DATEONE<3:0>: Binary-Coded Decimal Value of Date’s Ones Digit Contains a value from 0 to 9 2011-2018 Microchip Technology Inc. DS20005009G-page 18 MCP79400
in „MCP794xx EUI-64 Node Adresse“ · Mikrocontroller und Digitale Elektronik ·
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BUK100-50GL_1.pdf
˚Cj ID% = 100⋅I /ID D5 ˚C) = f(T ); cmbditions: V = 5 V IS ID = f(V ); parameter V ; t = 250 s & t < t DS IS p p d sc 100 ID & IDM / A BUK100-50GL ID / A BUK100-50GL 40 DS/I tp = VIS / V = 6 )V 35 S(ON 10 us 5.5 RD 30 10 5 100 us 25 4.5 1 ms 20 DC 10 ms 15 4 1 100 ms 3.5 10 3 Overload protection
in „12V/2,5 A Sicher schalten“ · Mikrocontroller und Digitale Elektronik ·
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IRF830.pdf
Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain- gate Voltage (R = 20 k ) 500 V GS VGS Gate-source Voltage 〉 20 V o ID Drain Current (continuous) at c = 25 C 4.5 A ID Drain Current (continuous) at c = 100 C 2.9 A DM ( ) Drain Current (pulsed) 18 A P Total Dissipation at
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·
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MEM4X16E43VTW-5.pdf
tCSH 38 45 ns 31 CAS# setup time (CBR Refresh) CSR 5 5 ns 4, 28 t CAS# to WE# delay time CWD 28 35 ns 18, 28 WRITE command to CAS# lead time tCWL 8 10 ns 31 t Data-in hold time DH 8 10 ns 19, 29 Data-in setup time tDS 0 0 ns 19, 29 Output disable OD 0 12 0 15 ns 24, 25 Output enable time tOE 12 15 ns 20
in „SN74ABTH16460 4-to-1 Multiplexed/Demultiplexed Transceivers with 3-State Outputs“ · Mikrocontroller und Digitale Elektronik ·
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Datei
thermo.asm
.DEF R0XC=R12 .DEF R0XD=R13 .DEF R0XE=R14 .DEF R0XF=R15 .DEF R0X10=R16 .DEF R0X11=R17 .DEF R0X12=R18 .DEF R0X13=R19 .DEF R0X14=R20 .DEF R0X15=R21 .DEF R0X16=R22 .DEF R0X17=R23 .DEF R0X18=R24 .DEF R0X19=R25 .DEF R0X1A=R26 .DEF R0X1B=R27 .DEF R0X1C=R28 .DEF R0X1D=R29 .DEF R0X1E=R30 .DEF R0X1F=R31 .EQU
in „Thermometer mit Ds18B20“ · Mikrocontroller und Digitale Elektronik ·
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MOSFET.pdf
a ( r D , , 1.0 ID n V DS = 25V ( ≤ 60μs PULSE WIDTH S RD 1 2.0 3.0 4.0 5.0 6.0 7.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics
in „LeistungsMosfet Kühlfläche als Drain-Anschluss nutzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf7401.pdf
PD - 9.1244C IRF7401 HEXFET Power MOSFET Q Generation V Technology A Q Ultra Low On-Resistance S 1 8 DA V DSS = 20V Q N-Channel Mosfet S 2 7 D Q Surface Mount S 3 6 D Q Available in Tape & Reel G 4 5 D Q Dynamic dv/dt Rating R DS(on) = 0.022Ω Q Fast Switching Top View Description Fifth GenerationHEXFETsfromInternationalRectifier
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
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FDC638P-D.PDF
Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced • –4.5 A, –20 V.R DS(ON)= 48 mΩ @ V GS= –4.5 V using ON Semiconductor’s advanced PowerTrench process that has been especially tailored RDS(ON)= 65 mΩ @ V GS= –2.5 V to minimize the on-state resistance and yet maintain
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPD053N06N_Infineon.pdf
I =45 A 38 75 - S D Rev.2.2 page 2 2012-12-20 IPD053N06N Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2000 2500 pF V GS=0 V, V DS=30 V, Output capacitance C
in „12V mit Logic Mosfet schalten - funktioniert nicht“ · Analoge Elektronik und Schaltungstechnik ·
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IRL1004.pdf
Output Characteristics 1000 2.5 I = 130A ° D TJ= 25 C c ) a ( i 2.0 n100 T = 175 C s r J R u n C O d)1.5 c e z u r a o 10 o m - - o - - (1.0 i i r r D 1 D , , 0.5 I n ( VDS =250V D 20µs PULSE WIDTH R V GS =10V 0.1 0.0-60 -40 -20 0 20 40 60 80 100 120 140 160 180 2.0 3.0 4.0 5.0 6.0 7.0
in „Mosfet als Schalter 100W“ · Analoge Elektronik und Schaltungstechnik ·
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tempf_lm335.pdf
temperature / range while the LM235 operates over a −40˚C to +125˚C M 3 Schematic Diagram 3 A r c s o n T m p e a u r e DS005698-1 e n o r s © 2000 National SemiDS005698r Corporation www.national.com 5 3 Connection Diagrams M / TO-92 A Plastic Package SO-8 3 Surface Mount Package TO-46 2 Metal Can
in „Temperaturmessung mit μC und LM 335“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM135_LM235_LM335TO92_NSC.pdf
temperature / range while the LM235 operates over a −40˚C to +125˚C M 3 Schematic Diagram 3 A r c s o n T m p e a u r e DS005698-1 e n o r s © 2000 National SemiDS005698r Corporation www.national.com 5 3 Connection Diagrams M / TO-92 A Plastic Package SO-8 3 Surface Mount Package TO-46 2 Metal Can
in „Temperatusensor LM 335“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM135_LM235_LM335TO92_NSC.pdf
temperature / range while the LM235 operates over a −40˚C to +125˚C M 3 Schematic Diagram 3 A r c s o n T m p e a u r e DS005698-1 e n o r s © 2000 National SemiDS005698r Corporation www.national.com 5 3 Connection Diagrams M / TO-92 A Plastic Package SO-8 3 Surface Mount Package TO-46 2 Metal Can
in „Temperatur + Anfänger“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM135.pdf
temperature / range while the LM235 operates over a −40˚C to +125˚C M 3 Schematic Diagram 3 A r c s o n T m p e a u r e DS005698-1 e n o r s © 2000 National SemiDS005698r Corporation www.national.com 5 3 Connection Diagrams M / TO-92 A Plastic Package SO-8 3 Surface Mount Package TO-46 2 Metal Can
in „Spannungsversorgung LM135“ · Analoge Elektronik und Schaltungstechnik ·
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IRFB3006_IR.pdf
= 1 MHZ 16 C = C + C , C SHORTED ID= 170A iss gs gd ds V V = 48V Crss = gd ( DS C = C + C g V DS= 30V )12000 oss ds gd l 12 F o ( C iss e c r n o i 8000 S 8 a t a e C a C G S 4 4000 Coss G V Crss 0 0 0 40 80 120 160 200 240 280 1 10 100 QG Total Gate Charge
in „Motor PWM Steuerung, Mosfet Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
EEPROM.pdf
protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MO-187 Drawing No. C04-111 DS21203N-page 18 © 2005 Microchip Technology Inc. 24AA256/24LC256/24FC256 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) E p E1 B n L R D1 D D2 PIN 1 EXPOSED ID 1 2 METAL PADS E2 TOP
in „EEPROM auslesen (24xx256) mit Pic16f819, an PC über RS232“ · Mikrocontroller und Digitale Elektronik ·
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Datei
BlinkLED.LST
2E23 00080 decfsz SysWaitTempMS, F 000046 EF18 F000 00081 goto DMS_START 00004A 0012 00082 return 00083 00084 ;******************************************************************************** 00085 00004C 00086 Delay_S 00004C 00087 DS_START 00004C 0E0A 00088 movlw 10 00004E 6E22 00089 movwf DELAYTEMP4 000050 00090 DS_OUTER 000050 0E64 00091 movlw 100 000052 6E23 00092 movwf SysWaitTempMS 000054 EC18 F000 00093 call Delay_MS 000058 2E22 00094 decfsz DELAYTEMP4, F 00005A EF28 F000 00095 goto DS_OUTER 00005E 2E24 00096
in „Great Cow Basic“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TD_Meanwell_-_RSP-500-24__PSU_Powersupply_Stromumformer_Creality_3D-Drucker_Mean_Well_.pdf
1 1~3 DC OUTPUT -V 4~6 DC OUTPUT +V 15 Connector Pin No.Assignment (CN100) : 40 170 HRS DF11-04DP-2DS or equivalent Pin No. Assignment Mating Housing Terminal 1 -S 6 2 +S 2.5 1 0 HRS DF11-4DS HRS DF11-**SC 4 3 RC- or equivalent or equivalent 3 2 4 RC+ 1 1 6.56.5 4-M4(Both Sides) L=5mm Block Diagram FAN
in „Verkabelung eines 3D-Druckers“ · Analoge Elektronik und Schaltungstechnik ·
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Weller.pdf
A23 B24 B23 C24 C23 A23 A22 +-12V B23 B22 +-12V C23 C22 +-12V A22 A21 B22 B21 C22 C21 A21 B21 C21 A20 A20 B20 B20 C20 C20 A19 A19 B19 B19 C19 C19 A18 A18 B18 B18 C18 C18 A17 A17 B17 B17 C17 C17 A16 A16 B16 B16 C16 C16 A15 B15 C15 A15 A14 B15 B14 C15 C14 A14 A13 B14 B13 C14 C13 A13 A12 B13 B12 C13 C12
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Datei
DisplayT.asm
ungerade= runter ;.def Zaehler =r8; Zähler für Adressveränderung .def CT2 = r17 ; .def ADRESSE = r18 ; Einlesespeicher für Adressbyte ;.def KOMMA = r16 ;Bit 1 und 0= 00 ohne; 01 1Dezimalstelle; 10 2 DS; 11 3 DS; kopiert aus Steuer .def STEUER = r20 ; Bit2 gesetzt=Minus; ; Bit 1 und 0= 00 ohne; 01 1Dezimalstelle
in „Hausbus für Meß- und Steueraufgaben mit Attiny“ · Haus & Smart Home ·
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STR-W6253D_PWMswitschRegulator.pdf
Current versus Voltage at T = 25°C, Single Pulse A 100 100.00 ) %80 t 10.00 i 0. a f A 1m r e D 1m s g C60 t it s t g e tl (o) r t r 1.00 rr R DS p e C Cu et O D40 i du f r r S a D e 0.10 p e20 T Refer to figure 1 for MOSFET SOA temperature derating coefficient 0 0.01 0 25 50 75 100 125 150 1 10 100
in „suche Diode aus Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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STR-W6253D_PWMswitschRegulator.pdf
Current versus Voltage at T = 25°C, Single Pulse A 100 100.00 ) %80 t 10.00 i 0. a f A 1m r e D 1m s g C60 t it s t g e tl (o) r t r 1.00 rr R DS p e C Cu et O D40 i du f r r S a D e 0.10 p e20 T Refer to figure 1 for MOSFET SOA temperature derating coefficient 0 0.01 0 25 50 75 100 125 150 1 10 100
in „Reparatur Audio-Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PIC16F1503.pdf
2 3 4 5 6 7 8 9 A B C D E F 0 F 0 F e A 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 e T L DS41607A-page 20 Preliminary 2011 Microchip Technology Inc. PIC16(L)F1503 r e M r e M 5 t 2 n ‘ A s h 3 t 2 n ‘ A s h 1 g 3 e s R e 7 2 g 3 e s R e 7 K e l — — — — — — — — — — — — — — — — — — — — l d
in „Versorgungsspannung vom PIC mit PIC messen“ · Mikrocontroller und Digitale Elektronik ·
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MBI5039_Preliminary_Datasheet_V1.01-English.pdf
IOUT=20mA R ext700Ω - ±3.0 ±6.0 % V DS=1.0V Output Current vs. V DSwithin 1.0V and 3.0V, Output Voltage Regulation* %/dV DS R ext700Ω@20mA - ±0.1 ±0.3 % / V Output Current vs. %/dV DD V DDwithin 4.5V and 5.5V
in „LED-Treiber-IC mit möglichst vielen Ausgängen“ · Mikrocontroller und Digitale Elektronik ·
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nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal
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