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-_OFFLINE-__Ds2408_Power_Up_W....pdf
:51 PM Post #2 The ds2408 Data Sheet talks about this a bit on page 5. Look at the pin descriptions for P0 and RSTZ. Hope this helps, Group: Members Posts: 2 Will Joined: 18 October 05 Member No.: 5,045 LaserGecko Nov 12 2005, 12:17 AM Post #3 Thanks, Wil. That explains why I thought the DS1811 would make it do that, but neither that nor grounding the Reset pin seems to work. Group: Members Posts: 30 Joined: 15 April 05 Member
in „Initialisierung vom DS2408 (1-Wire-Port-Expander) - Probleme“ · Mikrocontroller und Digitale Elektronik ·
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Datei
clock_porta_forumpost.asm
0x80 BTFSS STATUS,2 GOTO _00124_DS_ MOVLW 0xc8 SUBWF r0x20,W _00124_DS_ BTFSC STATUS,0 GOTO _00114_DS_ ;genSkipc:3831: created from rifx:0xbf8721cc ; .line 14; "clock_porta_forumpost.c" for (j = 0; j < 255; j++) { MOVLW 0xff MOVWF r0x22
in „ausgänge PORTA vom pic wollen nicht so recht in C“ · Mikrocontroller und Digitale Elektronik ·
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PMV15UNEA.pdf
250 µA; V GS = 0 V; Tj= 25 °C 20 - - V breakdown voltage VGSth gate-source threshold ID= 250 µA; V DS = V GS; j = 25 °C 0.4 0.65 0.9 V voltage I drain leakage current V = 20 V; V = 0 V; T = 25 °C - - 1 µA DSS DS GS j GSS gate leakage current V GS = 8 V; VDS = 0 V; j = 25 °C - - 10 µA V GS = -8 V; DS
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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irfh4210d_pbf.pdf
1mA BV DSS/TJ Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C Reference to 25°C, ID= 10mA R DS(on) Static Drain-to-Source On-Resistance ––– 0.85 1.10 m VGS = 10V, D = 50A ––– 1.10 1.35 VGS = 4.5V,DI = 50A V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 100µA GS(th) DS GS D V GS(th) Gate
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
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Disketten_Info.pdf
Motorsteuereingang (Leitung 16). In modernen Laufwerken sind meist nur die Laufwerksauswahleingänge DS0 und DS1 angeschaltet (Leitungen 10, 12); die Auswahlsignale DS2, 3 (Leitungen 14, 6) werden nicht ausgewertet. Abb. 1.7 Die Anschlüsse an marktüblichen Laufwerken (Beispiele; Ansicht von hinten in normaler
in „Floppy FDD Diskette an AVR Mikrocontroller ATmega Beispiele Assembler“ · Projekte & Code ·
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irlb3034pbf-Datasheet.pdf
0.0 0 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 Starting T , Junction Temperature (°C) V DS,Drain-to-Source Voltage (V) J Fig 11. Typical C Stored Energy OSS Fig 12. Maximum Avalanche Energy vs. DrainCurrent 4 www.irf.com IRLB3034PbF 1 / ° ) D = 0.50 C h 0.1 0.20 t ( 0.10 e R R R R n 0.05 1R1
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IRLB3034PbF.pdf
0.0 0 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 Starting T , Junction Temperature (°C) V DS,Drain-to-Source Voltage (V) J Fig 11. Typical C Stored Energy OSS Fig 12. Maximum Avalanche Energy vs. DrainCurrent 4 www.irf.com IRLB3034PbF 1 / ° ) D = 0.50 C h 0.1 0.20 t ( 0.10 e R R R R n 0.05 1R1
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
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IRLB3034.pdf
0.0 0 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 Starting T , Junction Temperature (°C) V DS,Drain-to-Source Voltage (V) J Fig 11. Typical C Stored Energy OSS Fig 12. Maximum Avalanche Energy vs. DrainCurrent 4 www.irf.com IRLB3034PbF 1 / ° ) D = 0.50 C h 0.1 0.20 t ( 0.10 e R R R R n 0.05 1R1
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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b8_handbuch_1205.pdf
Sockel einzusetzen, dass Pin1 des PICs in Pin 1 der Fassung sitzt. Der Brenner8 wird zukünftig auch für 12-Bit-PICs und dsPIC30-Typen erweitert werden. Allerdings werden dsPICs sowie 8-Pin-12-Bit-PICs nicht im Testsockel zu brennen sein, sondern nur über ein ICSP-Kabel mit passendem Adapter 10.5 Bedienung
in „PIC16f628 programmieren“ · Mikrocontroller und Digitale Elektronik ·
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irl7486mpbf-936689.pdf
On-Resistance vs. Temperature 14 100000 VGS = 0V, f = 1 MHZ C = C + C , C SHORTED ID= 123A iss gs gd ds 12 Crss = Cgd V VDS = 32V C = C + C e oss ds gd g 10 VDS = 20V F l (10000 Ciss V c e 8 n u i C oss o a C - 6 a rss - C t C 1000 G 4 , G V 2 0 100 1 10 100 0 20 40 60 80 100 120 140 160 180 200 VDS ,
in „Reparatur Makita XWT08Z (DTW1002Z)“ · Analoge Elektronik und Schaltungstechnik ·
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LTC1477_LinearTechnology.pdf
OPERATION (LTC1477 or single channel of LTC1478) Input TTL-CMOS Converter gatedrivefortheinternallowR DS(ON) NMOSswitchfrom the power supply. No external 12V supply is required to TheLTC1477enableinputisdesignedtoaccommodatea switch the output. widerangeof3Vand5Vlogicfamilies.Theinputthreshold voltage is
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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MBI5026.pdf
Clock input terminal for data shift on rising OUT1 6 19 OUT14 CLK edge OUT2 7 18 OUT13 OUT3 8 17 OUT12 Data strobe input terminal OUT4 9 16 OUT11 OUT5 10 15 OUT10 LE Serial data is transferred to the output latch OUT6 11 14 OUT9 when LE is high. The data is latched when OUT7 12 13 OUT8 LE goes low. MBI5026CN
in „Vorschläge für Led-Treiber?“ · Mikrocontroller und Digitale Elektronik ·
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MBI5026.pdf
Clock input terminal for data shift on rising OUT1 6 19 OUT14 CLK edge OUT2 7 18 OUT13 OUT3 8 17 OUT12 Data strobe input terminal OUT4 9 16 OUT11 OUT5 10 15 OUT10 LE Serial data is transferred to the output latch OUT6 11 14 OUT9 when LE is high. The data is latched when OUT7 12 13 OUT8 LE goes low. MBI5026CN
in „TPIC6B595N Cascade Problem“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds3231.h
// ds3231.h // 2018.06.04 // Programm fuer MIDI-Block // Version fuer die Pruefung von Uhr DS3231 // Hardware-i2c #ifndef DS3231_H #define DS3231_H 1 /*************** fur I2C **********************/ #ifndef
in „AVR RTC - Modul“ · Mikrocontroller und Digitale Elektronik ·
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Chess-Schematic.PDF
10K PIS7PO3SRCK DRAIN3 PI14PO306 RL21 LED21 I202 1K01IE00 IE00 GND 11 7 S1 PS2 10 P12 10 P12 20 P0 0 P 02 P0 P 02 P0 P 2 I0 PI2 5V PIS8PO3CLR DRAIN7 PI13PO4L02 P1K1 E20 PE20 GND RL22 LED22 PIP16O20DS P0 PI6ISO207 SIPO_RCK GND PI10PO3G8 DRAIN6 PI12PO3013 RL23 LED23 I22 1K1 IE20 IE20 GND
in „Projekt: Schachcomputer mit OLED-Display, Gehäuse aus Holz (open source)“ · Mikrocontroller und Digitale Elektronik ·
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DS_L6205N.pdf
10 11 12 sq. cm 13/18 L6205 Figure 18. Typical Quiescent Current vs. Figure 21. Typical High-Side RDS(ON) vs. Supply Voltage Supply Voltage Iq [mA] R DS(ON)] 5.6 fsw= 1kHz T j 25°C 0.380 0.376 Tj= 85°C 5.4 0.372
in „1. Schaltung Mosfet Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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Transistoren_cht.pdf
DIP Harris RLP1N06CLE 60 0.75 1 TO-220AB Harris RLP1N08LE 80 0.75 1 TO-220AB Harris RLP5N08LE 80 0.12 5.5 TO-220AB 2SK2314 A Harris Si2301DS -12 0.13 2.3 SOT-23 Siliconix Si2302DS 20 0.085 2.8 SOT-23 Siliconix Si2303DS -30 0.24 -1.7 1.25 SOT-23 Siliconix Si2304DS 30 0.117 2.5 1.25 SOT-23 Siliconix Si2305DS -8 0.052 -3.5 1.25 SOT-23 Siliconix Si2306DS 30 0.057 3.5 1.25 SOT-23 Siliconix Si2307DS -30 0.08 3 1.25 SOT-23 Siliconix Si2308DS 60 0.16 2 1.25 SOT-23 Siliconix Si2315DS -12 0.055 -3.5 1.25 SOT-23 Siliconix Si3441DV -20 0.1 3.3 TSOP-6 Siliconix
in „Frage Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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Power_MOSET_Cross_reference.pdf
DIP Harris RLP1N06CLE 60 0.75 1 TO-220AB Harris RLP1N08LE 80 0.75 1 TO-220AB Harris RLP5N08LE 80 0.12 5.5 TO-220AB 2SK2314 A Harris Si2301DS -12 0.13 2.3 SOT-23 Siliconix Si2302DS 20 0.085 2.8 SOT-23 Siliconix Si2303DS -30 0.24 -1.7 1.25 SOT-23 Siliconix Si2304DS 30 0.117 2.5 1.25 SOT-23 Siliconix Si2305DS -8 0.052 -3.5 1.25 SOT-23 Siliconix Si2306DS 30 0.057 3.5 1.25 SOT-23 Siliconix Si2307DS -30 0.08 3 1.25 SOT-23 Siliconix Si2308DS 60 0.16 2 1.25 SOT-23 Siliconix Si2315DS -12 0.055 -3.5 1.25 SOT-23 Siliconix Si3441DV -20 0.1 3.3 TSOP-6 Siliconix
in „Schaltregler Fragen“ · Analoge Elektronik und Schaltungstechnik ·
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2n3958.pdf
Voltage Capacitance vs. Gate-Source Voltage 10 5 f = 1 MHz ) f = 1 MHz p e ) 8 c 4 p t ( c c p t 6 C 3 V DS= 0 V c k p a C VDS = 0 V d 5 V t e p 4 5 V F 2 I s 15 V – 15 V e i e C 2 R 1 – 20 V 20 V r C 0 0 0 –4 –8 –12 –16 –20 0 –4 –8 –12 –16 –20 V GS– Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) Equivalent
in „JFET prüfen mit transistortester“ · Analoge Elektronik und Schaltungstechnik ·
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2n3958.pdf
Voltage Capacitance vs. Gate-Source Voltage 10 5 f = 1 MHz ) f = 1 MHz p e ) 8 c 4 p t ( c c p t 6 C 3 V DS= 0 V c k p a C VDS = 0 V d 5 V t e p 4 5 V F 2 I s 15 V – 15 V e i e C 2 R 1 – 20 V 20 V r C 0 0 0 –4 –8 –12 –16 –20 0 –4 –8 –12 –16 –20 V GS– Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) Equivalent
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4412f.pdf
Current –1 –2.5 –5 A I Sink Current 25 50 85 A G(SNK) V G(ON) GATE Clamp Voltage Apply IGATE= 1 A, V IN12V, 6.3 7 7.7 V VSENSE = 11.9V, Measure V INV GATE V G(OFF) GATE Off Voltage Apply IGATE= –5 A, V IN12V, 0.13 0.25 V VSENSE = 12.1V, Measure V SENSE – VGATE tG(ON) GATE Turn-On Time VGS < –3V, CGATE =
in „Akku_bei_MP3-Player“ · Analoge Elektronik und Schaltungstechnik ·
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MCP4151.pdf
Settling Time (V DD = 2.7V) Response Time (1 µs/Div). (1 µs/Div). © 2008 Microchip Technology Inc. DS22060B-page 27 MCP413X/415X/423X/425X Note: Unless otherwise indicated, T = A25°C, V DD = 5V, V SS = 0V. 0.1 0.12 0.09 0.08 0.1 0.07 5.5V 0.08 5.5V 0.06 %0.05 %0.06 0.04 0.03 3.0V 0.04 0.02 0.02 0.01
in „Frage zum MCP4151 SPI Digital Poti?“ · Mikrocontroller und Digitale Elektronik ·
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Uhr_Thermometer.bas
Portd.6 , Db7 = Portd.7 , Rs = Portd.2 , E = Portd.3 Config Lcd = 16x2 Cursor Off Cls Deflcdchar 0 , 12 , 18 , 18 , 12 , 32 , 32 , 32 , 32 ' replace [x] with number (0-7) '----------------- 'Konfiguration TWI/I²C '--------------------- Config Sda = Portc.4 Config Scl = Portc.5 'LM75-Adressen Const Lm75_schreiben = &H90 Const Lm75_lesen = &H91 'DS1307-Adresse Const Ds1307_schreiben = &HD0 Const Ds1307_lesen = &HD1 I2cinit '--------------------- 'Konfiguration Eingabe '--------------------- Ddrb = &B0000_0000 Taster_uhrzeit Alias Pinb.2 Taster_incr
in „Bascom LM75 Schalttemperatur auslesen“ · Mikrocontroller und Digitale Elektronik ·
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mt9v403_ds.pdf
Technology, Inc., reserves the right to change products or specifications without notice. MT9V403_DS.fm - Rev. B 1/04 EN 4 ©2004 Micron Technology. Inc. 1/2-INCH VGA (WITH FREEZE-FRAME) CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR Figure 5: Master Mode Row Timing Diagram 671 + 1 12 652 653 671 169 1 12 SYSCLK
in „Wer hat Interesse an CMOS Bildsensoren?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
SP601_RevC_annotated_master_ucf_8-28-09.ucf
ohm) #NET "GPIO_HDR6" LOC = "F13"; ## 6 on J13 (thru series R97 200 ohm) #NET "GPIO_HDR7" LOC = "P12"; ## 8 on J13 (thru series R96 200 ohm) ### NET "GPIO_LED_0" LOC = "E13"; ## 2 on DS11 LED #NET "GPIO_LED_1" LOC = "C14"; ## 2 on DS12 LED #NET "GPIO_LED_2" LOC = "C4"; ## 2 on DS13 LED #NET "GPIO_LED_3" LOC = "A4"; ## 2 on DS14 LED ### #NET "GPIO_SWITCH_0" LOC = "D14"; ## 1 on SW8 DIP Sw #NET "GPIO_SWITCH_1" LOC = "E12"; ## 2 on SW8 DIP Sw #NET "GPIO_SWITCH_2" LOC = "F12"; ## 3 on SW8 DIP Sw #NET "GPIO_SWITCH_3" LOC = "V13
in „Ethernet GMII“ · FPGA, VHDL & Co. ·
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Datei
main.c
); ds1307_write_byte(0x02, (((u8_min & HOURS)+((u8_ho10 <<4)& HOURS10)) | CH)); } if(!io_get(GPIO_PUSH_BUTTON_1)){ state=Zeitbestaetigen; delay_ms(1000); } break; case Zeitbestaetigen: ds1307_write_byte(0x00
in „AVR32 Timer Interrupt“ · Mikrocontroller und Digitale Elektronik ·
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datasheet.pdf
On-State Resistance (VGS = 10V, 0.5D[Cont.] 0.011 Ohms Zero Gate Voltage Drain Current (= V , V = 0V) I DS DSS GS 250 A DSS Zero Gate Voltage Drain Current (= 0.8 V , V = 0V, T = 125°C) 1000 DS DSS GS C GSS Gate-Source Leakage Current (GS= ±30V, VDS = 0V) ±100 nA VGS(th) Gate Threshold Voltage DS = VGS, D
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Datei
RTC.C
DEBUG_PRINTLN(F(" I2C EEPROM ")); i2c_test_flags|=(1<<I2C_EEPROM); break; case 0xD0: Wire.beginTransmission(DS1307_ID); printIIC(0x3F); (Wire.endTransmission()) ? i2c_test_flags|=(1<<I2C_RTC_3231) : i2c_test_flags|=(1<<I2C_RTC_1307); #ifdef DEBUG (i2c_test_flags&(1<<I2C_RTC_3231)) ? Serial.println(F(" DS3231
in „DS3231 RTCmit PC synchronisieren“ · Mikrocontroller und Digitale Elektronik ·
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PH7030L.pdf
250 µA; V GS = 0 V; Tj= 25 °C 30 - - V breakdown voltage VGS(th) gate-source threshold D = 1 mA; V DS = V GS; Tj= 150 °C; 0.6 - - V voltage see Figure 8 D = 1 mA; V DS = V GS; Tj= 25 °C; 1 1.5 2 V see Figure 8 DSS drain leakage current VDS = 30 V; VGS = 0 V; Tj= 25 °C - 0.06 1 µA VDS = 30 V; VGS = 0
in „Am3 Mainboard Vcore instabil wenn kalt“ · PC Hard- und Software ·
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Datei
ds1307.c
minute < 0 || minute > 59 || hour < 0 || hour > 23 || day < 1 || day > 31 || month < 1 || month > 12 || year < 0 || year > 99) return 8; //sanitize day based on month if(day > pgm_read_byte(ds1307_daysinmonth + month - 1)) return 0; //get day of week uint8_t dayofweek = ds1307_getdayofweek(year, month
in „ATmega16 liefert kein Signal an allen Pins außer I2c“ · Mikrocontroller und Digitale Elektronik ·
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datasheet_ao3400.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „24v rgbww controller mosfets und ic's“ · Analoge Elektronik und Schaltungstechnik ·
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1811081213_Alpha---Omega-Semicon-AO3400A_C20917.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Suche Bauteil XOXL-3E“ · Analoge Elektronik und Schaltungstechnik ·
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AO3400A.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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I2C_Sheet.pdf
are required to filter PWM noise for EMC reasons B P5 10 INT 10R 14 SCL P6 11 11 DB4 P4 C55 0u1 15 12 SDA n P7 12 DB5 P5 C57 C32 PC0 G 13 DB6 P6 0u1 100uF R74 14 DB7 P7 BL+ 15 LED-A 10K INTRTC 8 PWM1 SP7 16 LED-K 3 SP2W VCC U12 DS3232 GND 8x2 Q6 NXV75UP R77 JP19 4 Vcc INT/SQW 5 2 1 2 J47 GND Vgs > 1V
in „NXP PCA8574 hat Phänomen mit 2 Adressen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
DS18S20.INC
EJECT ;**************************************** ;* * ;* DS18S20 Driver * ;* Stand: 22.2.2005 * ;* * ;**************************************** EXTERN XTAL EXTERN DS18S20_Port Public DS18S20_Reset ; C := DS18S20[B] Public DS18S20_Read ; A := DS18S20[B] Public
in „AT89C51ED2 (8051) mit DS18S20“ · Mikrocontroller und Digitale Elektronik ·
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bs208.pdf
DSS drain-source breakdown −V GS= 0 200 − - V voltage −ID= 10 A −DSS drain-source leakage curren−V DS= 130 V − − 1 A V GS= 0 −DSS drain-source leakage curren−V DS= 70 V − − 25 A −V GS= 0.2 V −GSS gate-source leakage current−V GS= 20 V − − 100 nA V DS= 0 −VGS(th) gate-source threshold V GS= VDS 0.8 −
in „Mosfet BS208 sperrt nicht bei >3V“ · Analoge Elektronik und Schaltungstechnik ·
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2sk1402.pdf
breakdown voltage K1402A 650 — — Gate to source breakdown V ±30 — — V I = ±100 µA, V = 0 (BR)GSS G DS voltage Gate to source leak current IGSS — — ±10 µA V GS= ±25 V, V DS= 0 Zero gate voltage K1402 I — — 250 µA V = 500 V, V = 0 DSS DS GS drain current K1402A V = 550 V, V = 0 DS GS Gate to source cutoff voltage V 2.0 — 3.0 V I = 1 mA, V = 10 V GS(off) D DS Static drain to source K1402 R — 1.8 2.4 I = 2 A, V = 10 V *1 DS(on) D GS on state resistance K1402A — 2.0 2.6 Forward transfer admittance |yfs| 2.2 3.5 — S ID= 2 A, V DS= 10 V *1 Input capacitance Ciss
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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TC2014.pdf
shall not exceed .005" (0.127mm) per side. EIAJ Equivalent: SC-74A Drawing No. C04-091 Revised 09-12-05 2001-2012 Microchip Technology Inc. DS21662F-page 13 TC2014/2015/2185 NOTES: DS21662F-page 14 2001-2012 Microchip Technology Inc. TC2014/2015/2185 APPENDIX A: REVISION HISTORY Revision F (December
in „Mcp3551 PT1000 Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ATmega8515.asm
wr0, dz ; Startdrehzahl siehe oben Definitionen out OCR0, wr0 ; IRQ bei k = 1/2 * fpwm ; Fclk/8 -> DS S.91 T48, Phase Correctly PWM - ein DS. S.90 T44 ; OC0 pin 14 - HIGH = Match->Top->Match -DS. S91 T47 ldi wr0, 0x62 ; 62h = 01100010 out TCCR0, wr0 ldi wr0, 1<<TOIE0^0<<OCIE0 ;Interrupt Overflow/ Compare
in „mC arbeitet nicht“ · Mikrocontroller und Digitale Elektronik ·
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Datei
AQ_Rly_Dm_lcd_lan_1_wire_18_11_12.ino
______________ // HAUPTPROGRAMM void loop(void) { byte i; byte present = 0; byte type_s; byte data[12]; byte addr[8]; float celsius; if ( !ds.search(addr)) { // Serial.println("No more addresses."); // Serial.println(); ds.reset_search(); delay(250); return; } Serial.print("ROM ="); for( i = 0; i < 8
in „Aquariumcontroller: hängt sich auf / stürzt ab / friert ein - Hilfe!“ · Mikrocontroller und Digitale Elektronik ·
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AL5801.pdf
50 0 50 100 150 JUNCTION TEMPERATURE ( C) ° VOUT (V) Figure 11 REXT vs. Junction Temperature Figure 12 Output Current vsOUT 6 of 11 AL5801 July 2012 Document number: DS35555 Rev. 3 - 2 www.diodes.com © Diodes Incorporated AL5801 Application Information Figure 13 Typical Application Circuit for Linear
in „Suche Konstantstromquelle effizient, klein und günstig.“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds18b20.h
/*! * \file ds18b20.h * \brief DS18B20 Temperatursensor lesen/schreiben, h-Datei * \author Joerg S. * \date 1.2007 */ #ifndef DS18B20_H #define DS18B20_H 1 //////////////////////////////////////////////////////////
in „Wer hat DS18x20 an MSP430 am laufen?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
bios6V127.asm
db 1h indadr: dw 0h indad2: dw 0h ; begdat equ dirbuf ; dirbuf: ds 80h ; Directory Access Buffer alv0: ds 12h csv0: ds 10h alv1: ds 12h csv1: ds 10h alv2: ds 12h csv2: ds 10h alv3: ds 12h csv3: ds 10h enddat: ds 0h ; datsiz equ 0108h ; = ENDDAT - BEGDAT ; uc1out: ds 3h ; User-Consol-Output uc1in: ds 3h ; User-Consol-Input uc1sta: ds 3h ; User-Consol-Status ; ptr: ds 3h ; Paper-Tape-Reader ur1: ds 3h ; User-Reader 1 ur2: ds 3h ; User-Reader 2 ; ptrsta: ds 3h ; Paper-Tape-Reader-Status ur1sta: ds
in „Suche MOPPEL Projekt in Heft oder .PDF“ · Mikrocontroller und Digitale Elektronik ·
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JXI5020.pdf
ߏթఖᆭԱྛඔऌൻೆ؊b OUT0 5 20 OUT15 OUT1 6 19 OUT14 ൈᇒݼᆭൻೆ؊Ġሧਘ໊၍߶ؿളᄝൈᇒഈ OUT2 7 18 OUT13 CLK OUT3 8 17 OUT12 ശჸb OUT4 9 16 OUT11 ඔऌ॥ (data stroൻೆ؊b OUT5 10 15 OUT10 OUT6 11 14 OUT9 LE ֒ LE൞໊ۚൈđԱྛඔऌ߶ФԮೆᇀൻԛ OUT7 12 13 OUT8 ඝ෭ఖĠ֒ LE൞໊֮ൈđሧਘ߶Фඝ෭ᇾb JXI5020GF/GP OUT0 OUT15 ޚੀൻԛ؊b ൻԛᇁିݼ؊b ֒ OE൞໊֮ൈđࠧ߶ఓ OUT0~OUT15
in „Chinesische IC und ihre Verwandschaft“ · Mikrocontroller und Digitale Elektronik ·
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_DS1990R-DS1990R-F5.pdf
Configurations Examples of Accessories F3 SIZE F5 SIZE 3.10mm 5.89mm PART ACCESSORY 0.51mm 0.51mm BRANDING DS9096P Self-Stick Adhesive Pad o n® DS9101 Multipurpose Clip utt .co 16.25mm DS9093RA Mounting Lock Ring i m DS9093A Snap-In Fob 89 ® 01 000000FBC52B DS9092 iButton Probe Y 1-Wire 5 WW 0R# 17.35mm ZZ DS19
in „1-Wire: iButton: sendet keine Daten“ · Mikrocontroller und Digitale Elektronik ·
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AP3031.pdf
1.0 n 55 T w T = -40 C C d A 0.8 u 50 T = +25 C S A o 45 TA= +85 C 0.6 0.4 402 4 6 8 10 12 14 16 -60 -40 -20 0 20 40 60 80 100 120 140 Input Voltage (V) Temperature ( C) AP3031 5 of 13 December 2022 Document number: DS41442 Rev. 2 - 2 www.diodes.com © 2022 Copyright Diodes Incorporated. All
in „Verständnisfrage Datenblatt AP3031 PMIC“ · Mikrocontroller und Digitale Elektronik ·
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ZXM61N02F.pdf
VGS=0V Zero Gate Voltage Drain Current IDSS 1 A VDS=20V, V GS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance
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nFET_ZXM61N02FTA.pdf
VGS=0V Zero Gate Voltage Drain Current IDSS 1 A VDS=20V, V GS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance
in „ESP8266 Module mit Batterie betreiben - Strom sparen“ · Mikrocontroller und Digitale Elektronik ·
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nFET_ZXM61N02FTA.pdf
VGS=0V Zero Gate Voltage Drain Current IDSS 1 A VDS=20V, V GS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance
in „Wellenlänge Infrarot Leuchtdiode?“ · Analoge Elektronik und Schaltungstechnik ·
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nFET_ZXM61N02FTA.pdf
VGS=0V Zero Gate Voltage Drain Current IDSS 1 A VDS=20V, V GS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance
in „3.3V MOSFET ersetzen“ · Analoge Elektronik und Schaltungstechnik ·