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TC55V16256FT.pdf
Output Enable Input I/O2 8 37 I/O15 I/O2 8 37 I/O15 I/O3 9 36 I/O14 I/O3 9 36 I/O14 I/O4 10 35 I/O13 I/O4 10 35 I/O13 LB , UB Data Byte Control Inputs GNDD 12 33 VDD GNDD 12 33 VNDD I/O5 13 32 I/O12 I/O5 13 32 I/O12 V DD Power (+3.3 V) I/O6 14 31 I/O11 I/O6 14 31 I/O11 I/O7 15 30 I/O10 I/O7 15 30 I/
in „suche: schnelles SRAM“ · Markt ·
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Hilfe bei Bauteilidentifizierung erbeten (MOSFET, SOT23)“ · Offtopic ·
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PDF
IRLML2502.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LiveDesign_EB_Schematics-xilinx_spartan.pdf
: NEB_XTALOSC.SchDoc 1 2 3 4 1 2 3 4 5 6 6 DIGIT 7-SEGMENT DISPLAY A DS1 DS2 DS3 DS4 A DIG0_SEG0 R25 270R 7 a K 3 DIG1_SEG0 R26 270R 7 a K 3 DIG2_SEG0 R27 270R 7 a K 3 DIG3_SEG0 R28 270R 7 a K 3 DIG0_SEG1 R29 270R 6 8 DIG1_SEG1 R30 270R 6 8 DIG2_SEG1 R31 270R 6 8 DIG3_SEG1
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sct2080ke-e.pdf
drain current Tj= 150°C - 2 - Gate - Source leakage current I V = 22V, V = 0V - - 100 nA GSS GS DS Gate - Source leakage current IGSS VGS= 6V, V DS= 0V - - 100 nA Gate threshold voltage V GS (th) VDS= V GSI D 4.4mA 1.6 2.8 4.0 V *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty
in „Datenblatt fraglich?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds1820.h
// Gloable Variablen unsigned char ds1820[9]; // Array für empfangene Daten vom DS1820er: max 9 Bytes möglich // Matrix für bis zu 5 angeschlossenen DS18S20er-Slaves: // - Stations-Nummern: 0 - 4 // - Jeder Slave hat einen 8 Byte großen
in „DS18S20 auslesen (finde den fehler nicht)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NL6448AC33-29.pdf
otherwise display position is shifted to right or left side, or to up or down side. Data Sheet EN0439EJ1V0DS00 13 NL6448AC33-29 tC tch 0.7 VCC CLK 0.5 VCC 0.3 VCC tcrf tds tdh DATA INVALID INVALID (R0 - R5) 0.7 V CC (G0 - G5) 0.5 V CC (B0 - B5) 0.3 VCC tdrf tdrf teh tes teh tes 0.7 VCC DE 0.5 VCC 0.3 VCC terf
in „[S] Leute die eine "Grafikkarte" für uC bauen wollen“ · Mikrocontroller und Digitale Elektronik ·
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PH7030L.pdf
250 µA; V GS = 0 V; Tj= 25 °C 30 - - V breakdown voltage VGS(th) gate-source threshold D = 1 mA; V DS = V GS; Tj= 150 °C; 0.6 - - V voltage see Figure 8 D = 1 mA; V DS = V GS; Tj= 25 °C; 1 1.5 2 V see Figure 8 DSS drain leakage current VDS = 30 V; VGS = 0 V; Tj= 25 °C - 0.06 1 µA VDS = 30 V; VGS = 0
in „Am3 Mainboard Vcore instabil wenn kalt“ · PC Hard- und Software ·
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PDF
RealSimGear_AVR256.pdf
" 5f 41 4c 54 5f 49 code:001332 45 4e 43 ds "ENC_ALT_INNER_DN" 5f 41 4c 54 5f 49 code:00133a.1 45 4e 43 ds "ENC_NAV_INNER_UP" 5f 4e 41 56 5f 49 code:001343 45 4e 43 ds "ENC_NAV_INNER_DN" 5f 4e 41 56 5f 49 code:00134b.1 45 4e 43 ds "ENC_NAV_OUTER_UP
in „ATmega2560 hex File disassemblieren“ · Mikrocontroller und Digitale Elektronik ·
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4412f.pdf
7 7.7 V VSENSE = 11.9V, Measure V INV GATE V G(OFF) GATE Off Voltage Apply IGATE= –5 A, V IN12V, 0.13 0.25 V VSENSE = 12.1V, Measure V SENSE – VGATE tG(ON) GATE Turn-On Time VGS < –3V, CGATE = 1nF (Note 5) 110 175 s tG(OFF) GATE Turn-Off Time VGS > –1.5V, CGATE = 1nF (Note 6) 13 22 s IS(OFF) STAT Off
in „Akku_bei_MP3-Player“ · Analoge Elektronik und Schaltungstechnik ·
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DS3231_M_MZ_Mems.pdf
100 200 300 400 TEMPERATURE (°C) SCL FREQUENCY (kHz) Maxim Integrated │ 6 www.maximintegrated.com 2 DS3231M ±5ppm, I C Real-Time Clock Pin Configuration TOP VIEW 32KHZ 1 + 16 SCL TOP VIEW VCC 2 15 SDA 32KHZ 1 + 8 SCL INT/SQW 3 DS3231M 14 VBAT V 2 7 SDA RST 4 13 GND CC DS3231M N.C. 5 12 N.C. INT/SQW 3
in „(empfindlicher) GPS Modul gesucht“ · Mikrocontroller und Digitale Elektronik ·
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Bauteile.pdf
720V 10A TO-247 106 20 Mos-Fet STW13NB60 600V 13A 0,54mΩ NKanal 112 21 74xxxx 74HC374ADW SMD 8BitFlipFlop 24 22 Optokoppler BRT23H Pin 15 23 Treiber ST485BDR RS485Treiber 17 24 74xxxx 74HCT161 SMD Counter 30 25 Treiber UCC3801 RS485Treiber
in „Elektronik Bauteile Neuwertig , meist Leistungselektronik“ · Markt ·
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PDF
MCP2551.pdf
voltage 0V Receive data output voltage 0.3 VDD 11 VRS = 4V; TXD = 2V © 2010 Microchip Technology Inc. DS21667F-page 13 MCP2551 NOTES: DS21667F-page 14 © 2010 Microchip Technology Inc. MCP2551 3.0 PACKAGING INFORMATION 3.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX MCP2551 XXXXXNNN
in „MCP2551 Standby Mode wenn AVR im Power down Modus“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TC2014.pdf
EIAJ Equivalent: SC-74A Drawing No. C04-091 Revised 09-12-05 2001-2012 Microchip Technology Inc. DS21662F-page 13 TC2014/2015/2185 NOTES: DS21662F-page 14 2001-2012 Microchip Technology Inc. TC2014/2015/2185 APPENDIX A: REVISION HISTORY Revision F (December 2012) • Added a note to each package outline
in „Mcp3551 PT1000 Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Installation_Xilinx_ISE_14.7_und_ModelSim_PE_Student_Edition_10.4_auf_Windows_10.pdf
... > vhdl.unisim library compiled from C:/Xilinx/14.7/ISE_DS/ISE/vhdl/src/unisims > vhdl.unisim library compiled to C:\Xilinx\14.7\ISE_DS\ISE\vhdl\mti_pe\10.4a\nt/unisim Prof. W. Reinhold, HTWK Leipzig, FEIT 10 Xilinx ISE 14.7 und ModelSim PE Student Edition 29.06.17
in „Installation Xilinx ISE 14.7 und ModelSim PE Student Edition 10.4 auf Windows 10“ · FPGA, VHDL & Co. ·
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Bild
Schaltplan mit ICs und Anschlüssen
ADC0) 23 ADC1) 24 ADC2) 25 ADC3) 26 I2C/SDA) 27 SCL/SCK) 28 (RXD) 2 (TXD) 3 (INT0) 4 (INT1) 5 DS(T1) 11 (AIN0) 12 (AIN1) 13 OC(ICP) 14 OC1A) 15 OC1B) 16 MISO) 18 (SCK) 19 IC3 1 I1 16 O1 2 I2 15 O2 3 I3 14 O3 4 I4 13 O4 5 I5 12 O5 6 I6 11 O6 7 I7 10 O7 8 GND CD+ IC4 1 I1 18 O1 2 I2 17 O2 3 I3 16 O3 4 I4 15 O4 5 I5 14 O5 6 I6 13 O6 7 I7 12 O7 8 I8 11 O8 9 VS GND 10 ULN2003AN 16 R1A 15 R1B 14 R1C 13 R1D 12 R1E 11 R1F 10 R1G 9 RN1H +5V X3 +5V Helligkeit 1 Stecker 5x 2 3 4 c Stecker 10x d e f g dp 4,7k R3 9-12V DS1820 +5V Achtung
in „LEDs mit gemeinsamen GND schalten“ · Analoge Elektronik und Schaltungstechnik · · Schaltpläne
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PDF
drm001.pdf
. . .62 Passive Infrared (PIR) Unit Designer Reference Manual MOTOROLA List of Figures and Tables 13 List of Figures and Tables Figure Title Page 4-10 Real-Time Clock, Dallas Semiconductor DS1307 Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67 4-11 MC68HC908GP32 Monitor Mode
in „AVR ATTiny84A mit C++ Werte an bestimmte Speicherstelle schreiben“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Can.txt
bit time is Tsync+SEG1PH+SEG2PH+PRSEG=13Tq // Nach Baudrate-Berechnung sollte 15Tq rauskommen, wegen Taktabweichung sollte aber auf 13Tq gestellt werden ///Interrupt Section of CAN Peripheral C1INTF = 0; //Reset all The CAN Interrupts IFS1bits.C1IF
in „Can Filter&Mask on dsPIC30F4013/MPLABICD3/C30“ · Mikrocontroller und Digitale Elektronik ·
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sct2750ny-e.pdf
- 0.1 10 A drain current DSS j Tj= 150°C - 0.2 - Gate - Source leakage current IGSS+ VGS= 22V, V DS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS= 6V, V DS= 0V - - -100 nA Gate threshold voltage V GS (th) VDS= V GSI D 0.63mA 1.6 2.8 4.0 V *1 Limited only by maximum temperature allowed. *
in „"Leiterbahn-Sicherung" erstezen - was würdet ihr tun?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
UHR.A51
dseg at 30h second: ds 1 minute: ds 1 hour: ds 1 weekday: ds 1 day: ds 1 month: ds 1 year: ds 1 cseg ;------------------------------------------------------------------------- inc_time: ; count up time and date mov a, #60
in „präzise Schaltuhr“ · Mikrocontroller und Digitale Elektronik ·
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stb6nk60z.pdf
drain current (V= 0) GS VDS = Max ratingC T = 125 °C 50 µA I Gate-body leakage V = ± 20 V GSS current (DS= 0) GS ±10 µA V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D RDS(on) Static drain-source on VGS = 10 V,DI = 3 A 1 1.2 Ω resistance Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V DS= 8 V, D= 3 A 5 S fs C pF iss Input capacitance 905 Coss Output capacitance V DS= 25 V, f = 1 MHz, pF V = 0 115 pF Crss Reverse transfer GS 25 capacitance Coss eq2.Equivalent output V = 0, V = 0 to 480
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PDF
stb6nk60z.pdf
drain current (V= 0) GS VDS = Max ratingC T = 125 °C 50 µA I Gate-body leakage V = ± 20 V GSS current (DS= 0) GS ±10 µA V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D RDS(on) Static drain-source on VGS = 10 V,DI = 3 A 1 1.2 Ω resistance Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V DS= 8 V, D= 3 A 5 S fs C pF iss Input capacitance 905 Coss Output capacitance V DS= 25 V, f = 1 MHz, pF V = 0 115 pF Crss Reverse transfer GS 25 capacitance Coss eq2.Equivalent output V = 0, V = 0 to 480
in „Unterschiedliche Power MOSFET kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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Bild
Schaltplan mit zwei 74HC595 Schieberegistern
GND C? 1uF/10V GND SR DATA 14 IC? 74HC595PW,118 16 VCC 15 Q0 1 Q1 2 Q2 3 Q3 4 Q4 5 Q5 6 Q6 7 Q7 10 DS 4 MR 5 Q4 11 SHCP 6 Q5 12 STCLK 7 Q6 13 OE 8 GND 9 Q7S SR RST SR SHCLK STCLK +3.3VIN C? 100nF/50V GND C? 1uF/10V GND SR RST 14 IC? 74HC595PW,118 16 VCC 15 Q0 1 Q1 2 Q2 3 Q3 4 Q4 5 Q5 6 Q6 7 Q7 10 DS 4 MR 5 Q4 11 SHCP 6 Q5 12 STCLK 7 Q6 13 OE 8 GND 9 Q7S SR RST SR SHCLK STCLK GND - Reset: nMR low and then high again - DS: Data input, only high for one SHCLK - STCP: can be the same CLK as SHCP
in „32-bit Shift-Counter“ · Mikrocontroller und Digitale Elektronik · · Schaltpläne
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PDF
ga1.pdf
0.014) 4 4 0.760(0.030) ) ) 9 1 . . ( ( 0 0 . . 1 1 1.270(0.050) TYP 2.420(0.095) 2.660(0.105) AZ431-A 13 of 19 March 2018 Document number: DS36721 Rev. 6 - 2 www.diodes.com © Diodes Incorporated AZ431-A Package Outline Dimensions (Cont. All dimensions in mm.) (2) Package Type: TO92 (Ammo Packing) 4.400(
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PDF
CAN-BootloaderPIC18F.pdf
FOR CAN NETWORKS (POWER SUPPLY, DISPLAYS AND CONNECTION HEADERS) 2003 Microchip Technology Inc. DS00247A-page 13 AN247 FIGURE A-3: EXAMPLE DIALOGS FOR THE CANCOMM HOST SOFTWARE: OUTPUT STATUS MESSAGES (TOP) AND PROGRESS BAR (BOTTOM) DS00247A-page 14 2003 Microchip Technology Inc. AN247 Software
in „CAN-Bootloader für PIC18F“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LiveDesign_Schematics.pdf
:NEB_XTALOSC.SchDoc 1 2 3 4 1 2 3 4 5 6 6 DIGIT 7-SEGMENT DISPLAY A DS1 DS2 DS3 DS4 A DIG0_SEG0 R25 270R 7 3 DIG1_SEG0 R26 270R 7 3 DIG2_SEG0 R27 270R 7 3 DIG3_SEG0 R28 270R 7 3 DIG0_SEG1 R29 270R 6 a K 8 DIG1_SEG1 R30 270R 6 a K 8 DIG2_SEG1 R31 270R 6 a K 8 DIG3_SEG1 R32
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irlb3034pbf-Datasheet.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
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PDF
IRLB3034PbF.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLB3034.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
5110X.PDF
Address Address IL tCWL tCWL CWL RWL RAD WCS WCS WCS WCH WCH WCH V tWP tWP WP WE IH V IL tDH tDH DH DS DS DS V DI IH Valid Valid Valid (Input) V Data In Data In Data In IL DO V (Output) OH HI-Z V OL ÒHÓ or ÒLÓ Fast Page Mode Early Write Cycle Semiconductor Group 48 HYB 511000BJ/BJL-50/-60/-70 1 M 1-DRAM
in „Datenblatt TC55100BPL-70L“ · Mikrocontroller und Digitale Elektronik ·
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PDF
___MPASM_USER_S_GUIDE_with_MPLINK_and_MPLIB.pdf
shells, one for the DOS version and one for ther. Windows version. 1997 Microchip Technology Inc. DS33014F - page 13 MPASM USER’S GUIDE with MPLINK and MPLIB Command Line Interface MPASM can be invoked through the command line interface as follows: MPASM [/<Option>[,/<Option>...]] [<file_name>] or MPASMWIN
in „Anfängerfrage zu Assembler“ · Mikrocontroller und Digitale Elektronik ·
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Datei
PIC16F630_DS1820.asm
& erkennen call delay_600us movlw 0xCC movwf ds1820 call write_ds1820 ; ROM-Kommando 0xCC: Skip ROM call delay_600us movlw 0x44 movwf ds1820 call write_ds1820 ; Kommando 0x44: Convert Temperature call delay_1s call init_ds1820 call delay_600us movlw 0xCC movwf ds1820 call write_ds1820 ; ROM-Kommando 0xCC: Skip ROM movlw 0xBE movwf ds1820 call write_ds1820 ; Kommando 0xBE: Read Scratchpad call read_ds1820 movf ds1820, w movwf temp1 ; Temperatur LSB call read_ds1820
in „DS1820 an PIC16F630 - Softwareprobleme, ich verzweifle!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF8736.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRF8736PbF 10000 V = 0V, f = 1 MHZ 5 GS D = 14.4A Ciss= Cgs+ gd, ds SHORTED ) Crss= Cgd ( VDS = 24V C = C + C g 4 V = 15V ) oss ds gd l DS p Ciss o ( e c r 3 t o c 1000 - p t a Coss t 2 , a C , S 1 Crss VG 0 100 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) ) ) DS ( ( n 100 n 100 e r 100µsec u u
in „IRF8736 - Was haltet Ihr davon?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1.5KE400CA.pdf
(A) %/°C 1.5KE6V8A 1.5KE6V8CA 5.80 6.45 7.14 10 1000 10.5 143.0 0.057 1.5KE7V5A 1.5KE7V5CA 6.40 7.13 7.88 10 500 11.3 132.0 0.061 1.5KE8V2A 1.5KE8V2CA 7.02 7.79 8.61 10 200 12.1 124.0 0.065 1.5KE9V1A 1.5KE9V1CA 7.78 8.65 9.55 1.0 50 13.4 112.0 0.068 1.5KE10A 1.5KE10CA 8.55 9.50 10.50 1.0 10 14.5 103.0
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Ferritperlen.pdf
Capacitance Ferrite Dimensions Insertion W.V. T.C. Beads Loss –25°C to +85°C FOR GENERAL APPLICATIONS DS310-55Y5S271M100 270pF ± 20% 100V DS310-55Y5S222M100 2200pF ± 20% 100V ±22% None Fig. 1 Fig. 4 DS310-55Y5S223S50 22000pF + 50%, –20% 50V DS310-55Y5S104M16 100000pF ± 20% 16V DST310-55Y5S271M100 270pF
in „24Bit Delta-Sigma ADC-Eingang vor ESD und Überspannung schützen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SD211SeriesDSRevA10.pdf
N-Channel Lateral DMOS Switch, Zener Protected Product Summary PART NUMBER V (BR)DSMin (V) V (GS)thax (V) rDS(on)Max (Ω) C rssax (pF) tONMax (ns) SD211DE 30 1.5 45 @ V GS0V 0.5 2 SD213DE 10 1.5 45 @ V GS0V 0.5 2 SD215DE 20 1.5 45 @ V GS0V 0.5 2 SST211 30 1.5 50 @ V GS0V 0.5 2 SST213 10 1.5 50 @ V GS0V 0.5 2
in „Schaltung mit 2 N-Kanal Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN50005.pdf
in this document is subject to Nexperia B.V. 2021. All rights reserved application note Rev. 1.1 — 13 September 2021 8 / 41 Nexperia AN50005 Paralleling power MOSFETs in high power applications V DS ID VGS(pl) V GS(th) VGS Q GS2 Q GS1 Q Q GS GD Q G(tot) 003aaa508 Fig. 7. Gate charge waveform definitions
in „N-Canal MOSFET Modul“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
oneWire.h
410 /* Prototypes **********************************************************************/ uint8_t ds1820_reset(GPIO_TypeDef * port, uint16_t used_pin); //reset device void ds1820_wr_bit(uint8_t wrbit, GPIO_TypeDef * port, uint16_t used_pin); //write one bit to device void ds1820_wr_byte(uint8_t wrbyte, GPIO_TypeDef * port, uint16_t used_pin); //write one byte to device uint8_t ds1820_re_bit(GPIO_TypeDef * port, uint16_t used_pin); //read one bit from device uint8_t ds1820_re_byte(GPIO_TypeDef * port, uint16_t used_pin); //read one byte from device float ds1820_read_temp(GPIO_TypeDef
in „Timingproblem mit Onewire und STM32“ · Mikrocontroller und Digitale Elektronik ·
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PDF
0900766b81524b17.pdf
Preliminary Datasheet RJH65T47DPQ-A0 R07DS1291EJ0101 650V - 45A - IGBT Rev.1.01 Application: Power Factor Correction circuit Oct 22, 2015 Features Low collector to emitter saturation voltage V CE(sat) 1.8 V typ. (atCI = 45 A, GE = 15 V, Ta
in „Vergleichstyp IGBT IXGQ90N27PB“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
70687A-1.pdf
BodyCom, hold harmless Microchip from any and all damages, claims, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, suits, or expenses resulting from such use. No licenses are dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, conveyed, implicitly or otherwise, under any Microchip intellectual property rights. ECONOMONITOR
in „Was darf man von einer PCB-Antenne erwarten?“ · HF, Funk und Felder ·
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Datei
ds18x20.c
else if ( (i & DS18B20_11_BIT) == DS18B20_11_BIT ) { usart_write_str0( "B20/11" ); } else if ( (i & DS18B20_10_BIT) == DS18B20_10_BIT ) { usart_write_str0( " B20/10 " ); } else { // if ( (i & DS18B20_9_BIT) == DS18B20
in „1Wire DS18B20 auslesen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
dm45.pdf
CWL CWL ▯ ▯ ▯ WCS tWCH WCS WCH WCS WCH ▯ tWP WP WP ▯ ▯ ▯ ▯ VIH ▯ ▯ WE# VIL ▯ ▯ ▯ tWCR tRWL ▯ ▯ ▯ ▯ ▯ DS tDH tDS DH DS DH ▯ ▯ ▯ VIOH ▯ ▯ DQ VIOL VALID DA▯A VALID DATA VALID DATA ▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ DON’T CARE ▯ ▯ UNDEFINED ▯ TIMING PARAMETERS -6 -6 SYMBOL MIN MAX UNITS SYMBOL MIN MAX UNITS t t AR 45 ns RAD
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PDF
DS3502-3122456.pdf
and Industrial Controls Mechanical POT Replacement Ordering Information PART TEMP RANGE PIN-PACKAGE DS3502U+ -40°C to +100°C 10 μSOP Pin Configuration and Typical Operating Circuit appear at DS3502U+T&R -40°C to +100°C 10 μSOP end of data sheet. +Denotes a lead(Pb)-free/RoHS-compliant package. T&R = Tape
in „Anschluss des Potentiometers an den Microcontroller“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS3502-3122456.pdf
and Industrial Controls Mechanical POT Replacement Ordering Information PART TEMP RANGE PIN-PACKAGE DS3502U+ -40°C to +100°C 10 μSOP Pin Configuration and Typical Operating Circuit appear at DS3502U+T&R -40°C to +100°C 10 μSOP end of data sheet. +Denotes a lead(Pb)-free/RoHS-compliant package. T&R = Tape
in „Anschluss des Potentiometers an den Microcontroller“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Compiler.h
********** * FileName: Compiler.h * Dependencies: None * Processor: PIC18, PIC24F, PIC24H, PIC24E, dsPIC30F, dsPIC33F, * dsPIC33E, PIC32 * Compiler: Microchip C32 v1.00 or higher * Microchip C30 v3.01 or higher * Microchip C18 v3.13 or higher * HI-TECH PICC-18 PRO 9.63 or higher * Company: Microchip
in „Anfängerproblem PIC18“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds1820.h
*************************************/ bool DS1820_ReadBit(void) { bool bBit; DS1820_DisableInterrupts(); output_low(DS1820_DATAPIN); DS1820_DelayUs(DS1820_MSTR_BITSTART); input(DS1820_DATAPIN); DS1820_DelayUs(DS1820_BITREAD_DLY); bBit = input(DS1820
in „ds18b20 temperaturmessung mit pic18f4550“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Transistor_Dual_PushPull_ZXTC2045E6.pdf
collector. 12. Thermal resistance from junction to solder-point (at the end of the collector lead). 13. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTC2045E6 2 of 6 March 2015 Document Number: DS33645 Rev: 3 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.c
der Sensoren // Position 0-4 eig. ID, Pos. 5+6 ist die Temperatur, Pos. 7 CRC-Byte PROGMEM uint8_t DS18B20IDs[MAXSENSORS+1][OW_ROMCODE_SIZE] = { OW_ID_T01, // 1. DS18B20 OW_ID_T02, OW_ID_T03, OW_ID_T04, OW_ID_T05, OW_ID_T06, OW_ID_T07, OW_ID_T08, OW_ID_Last }; // Endmarker uint8_t auslesen = 0; // 0
in „HTML-Header zerschossen?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
PLC-LOX-300-13-12-2019Multibus-2.ino
/* UDP syntax: signals: DS18B20 1wire sensor packet: rail1 1w2 2864fc3008082 temp 25.44 DS2438 1wire sensor packet: rail1 1w2 2612c3102004f 25.44 1.23 0.12 Sensor detected (after start): rail1 1w2 2864fc3008082 detected Sensor
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PDF
20002234D.pdf
40°C to +85°C. OUT A A Parameters Sym. Min. Typ. Max. Units Conditions NMOS Switch On Resistance R DS(ON)N — 0.6 — VIN= 3.3V, SW = 100 mA PMOS Switch On Resistance R DS(ON)P — 0.9 — VIN= 3.3V, SW = 100 mA NMOS Peak Switch Current I 600 850 — mA Note 4 N(MAX) Limit VOUT Accuracy VOUT % -3 — +3 % Includes
in „NRF24L01+ durch MCP1640 gestört?“ · Mikrocontroller und Digitale Elektronik ·
