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Datei
Lcd.asm
-> 094H..0A7H ;|Z 000,000mm | Zeile3 -> 0BCH..0CFH ;+--------------------+ Zeile4 -> 0D0H Zeile0: DS 20 Zeile2: DS 20 Zeile1: DS 20 Zeile3: DS 20 ;------------------------------------------------------------------------------- CSeg Include Macros.INC ;------------------------------------------------
in „Display HD44780 mit 8051er“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1.5KE6V8A.PDF
1.5KE7V5A 1.5KE7V5CA 6.40 7.13 7.88 10 500 11.3 132.0 0.061 1.5KE8V2A 1.5KE8V2CA 7.02 7.79 8.61 10 200 12.1 124.0 0.065 1.5KE9V1A 1.5KE9V1CA 7.78 8.65 9.55 1.0 50 13.4 112.0 0.068 1.5KE10A 1.5KE10CA 8.55 9.50 10.50 1.0 10 14.5 103.0 0.073 1.5KE11A 1.5KE11CA 9.40 10.50 11.60 1.0 5.0 15.6 96.0 0.075 1.5KE12A 1.5KE12CA 10.20 11.40 12.60 1.0 5.0 16.7 90.0 0.078 1.5KE13A 1.5KE13CA 11.10 12.40 13.70 1.0 5.0 18.2 82.0 0.081 1.5KE15A 1.5KE15CA 12.80 14.30 15.80 1.0 5.0 21.2 71.0 0.084 1.5KE16A 1.5KE16CA 13.60 15.20 16.80
in „Welches Bauteil (Diode?) ist das?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sihfr014.pdf
CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 μA 60 - - V DS GS D VDS temperature coefficient ΔV DS/TJ Reference to 25 °C, D = 1 mA - 0.068 - V/°C Gate-source threshold voltage V GS(th) V DS= V GS, D = 250 μA 2.0 - 4.0 V Gate-source leakage I V = ± 20 V - - ±
in „Hilfe bei Bauteil identifikation“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
_FET-P__JCET_AO3401.pdf
Sw itching characteristics (note 2) Turn-on delay time d(on) 6.3 ns T rn-on rise time tr VGS- 10V,V DS=-15V, 3.2 ns Turn-off delay time d(of) R L3.6Ω ,RGEN=6Ω 38.2 ns T rn-off fall i tf 12 ns Drain-source diode characteristics and maximum ratings Diod for ar d voltage (note 1) VSD IS=-1 ,VGS0 V -1 V Note
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FQ44N10F.pdf
µA l M VDS = 80 V, C = 150°C -- -- 100 µA O S IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, DS = 0 V -- -- 100 nA F I Gate-Body Leakage Current, Reverse V = -25 V, V = 0 V -- -- -100 nA E GSSR GS DS T On Characteristics V GS(th) Gate Threshold Voltage VDS = VGS, D = 250 µA 2.0 -- 4.0 V R DS(on
in „suche mosfet 100V so-8“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NDS355AN.pdf
CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage VDS = VGS ID= 250 µA 1 1.6 2 V TJ=125°C 0.5 1.2 1.5 R DS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, D = 1.7 A 0.105 0.125 Ω TJ=125°C 0.16 0.23 VGS = 10 V, D = 1.9 A 0.065 0.085 ID(ON) On-State Drain Current VGS = 4.5 V, DS = 5 V 6 A gFS Forward Transconductance
in „nds355/nds356“ · Markt ·
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PDF
8810-TuofengSemiconductor_002.pdf
Drain-Source Breakdown Voltage I =250µA, V =0V 20 V DSS D GS IDSS Zero Gate Voltage Drain Current V DS=16V, V GSV 1 µA IGSS Gate-Body leakage current VDS0V, V =GS2V ±15 µA V GS(th) Gate Threshold Voltage VDSV GS D =250µA 0.5 0.6 1 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS VGS =4.5V, D =6A 20 22 mΩ R DS(ON) Static Drain-Source On-Resistance V GS.5V, I D5.5A 28 30 mΩ g FS Forward Transconductance VDS =5V, D =6A 29 S V Diode Forward Voltage I =1.5A,V =0V 1.2 V SD S GS IS Maximum Body-Diode Continuous
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
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PDF
ADG507A.pdf
VSS VSS V SS V SS V SS VSS V min VDD VDD V DD V DD V DD VDD V max RON 500 500 500 typ 0 V V S +10 V,DS=0.5 mA; Test Circuit 1 700 1000 700 1000 700 1000 max RONDrift 0.6 0.6 0.6 %/°C typ 0 V VS +10 V, DS= 0.5 mA RONMatch 5 5 5 % typ 0 V VS +10 V, DS= 0.5 mA I (OFF), Off Input Leakage 0.02 0.02 0.02 nA
in „Videopfad - LM1881 -Sync-Problem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
emmc.pdf
the right to change products or specifications without notice. emmc_4-8gb_ps8225_v50_it.pdf - Rev. B 12/15 EN 12 © 2013 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary Preliminary 4GB, 8GB: e·MMC ECSD Register ECSD Register The 512-byte extended card-specific data (ECSD
in „Pin-Swap/Cross IC?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
270247_1.pdf
Voltage V GSV, I =D250uA -30 - - V V Gate-Threshold Voltage V = V , I =-250uA -1 -1.6 -3 V GS(th) DS GS D IGSS Gate-Body Leakage V DSV, V =±GSV - - ±100 nA V DS24V, V =0GS - - -1 I Zero Gate Voltage Drain Current V =-24V, V =0V, uA DSS DS GS - - -5 T J55ºC D(on) On-State Drain Current (Note 3) V GS5V
in „Suche alternative zu Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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mosfet.pdf
in low voltage devices. m o Figure 9 shows the relative importance of N each of the components to R DS(on)over the 5 3 voltage spectrum. As can be seen, at high voltages the R DS(on)is dominated by epi resistance and JFET component. This 2 component is higher in high voltage 1 devices due to the higher
in „MOSFET - welche Leistung?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mosfet.pdf
in low voltage devices. m o Figure 9 shows the relative importance of N each of the components to R DS(on)over the 5 3 voltage spectrum. As can be seen, at high voltages the R DS(on)is dominated by epi resistance and JFET component. This 2 component is higher in high voltage 1 devices due to the higher
in „NT mit Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Mosfet-Basics-IR.pdf
in low voltage devices. m o Figure 9 shows the relative importance of N each of the components to R DS(on)over the 5 3 voltage spectrum. As can be seen, at high voltages the R DS(on)is dominated by epi resistance and JFET component. This 2 component is higher in high voltage 1 devices due to the higher
in „MOSFET Sättigung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
AT32MENU_Int_anzeige_Abfrage_Passwort.bas
Echtzeituhr Ddrd = &HFE Ddrb.1 = 1 Config Sda = Portc.1 ' I2C Bus konfigurieren Config Scl = Portc.0 Const Ds1307w = &HD0 ' Addresse der Ds1307 Uhr Const Ds1307r = &HD1 Config Clock = User '' Interne Time/Date Routinen für Bascom konfigurieren Config Date = Dmy , Separator = . ' *********** Konfiguration Ende
in „Variabeln ändern in ISR“ · Mikrocontroller und Digitale Elektronik ·
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Elektronik_Sortimente.pdf
& Zubehör 5x NodeMCU ESP-12F (höchste Version mit CP2102 Chip) 5x D1 mini WeMos NodeMcu mit ESP-12F 5x ESP8266-01 5x ESP8266-12F 10x Logic Level Converter/ Shifter 5-fach (5,0V auf 3,3V) / I²C Logic Level Converter 5x FT232RL FTDI-Board
in „Einkaufsliste für die Einrichtung eines Elektronik-Labors“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
VGS=0V Zero Gate Voltage Drain Current IDSS 1 A VDS=20V, V GS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS100728A_IXTN660N04T4_-1022876.pdf
V V = V , I = 250μA 2.0 4.0 V GS(th) DS GS D I V = 15V, V = 0V nA200 GSS GS DS Applications IDSS VDS = VDSS, GS = 0V 10 A DC-DC Converters and Offi-Line UPS TJ= 150C 1.5 mA Primary-Side Switch RDS(on) VGS = 10V,
in „Suche Power-MosFet für etwa 600A“ · Analoge Elektronik und Schaltungstechnik ·
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DG506_507_508_509A.pdf
V- 3 14 GND 3 14 S16 4 25 S7 S8B 4 25 S7A S S S 1 4 13 V+ 1A 4 13 1B S15 5 24 S6 S7B 5 24 S6A S2 5 12 S S2A 5 12 S S 6 23 S S 6 23 S 5 2B 14 5 6B 5A S3 6 11 S6 S3A 6 11 S3B S13 7 22 S4 S5B 7 22 S4A S4 7 10 S7 S4A 7 10 S4B S12 8 21 S3 S4B 8 21 S3A D 8 9 S8 DA 8 9 DB S11 9 20 S2 S3B 9 20 S2A S 10 19 S
in „Bestimmtes Bauteil gesucht zur Signalverteilung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
traffic.asm
als Ampelschaltung ; ; ; =============================================================== ; list p=12f629 ; Prozessortyp festlegen include "p12f629.inc" ; Laden von vordef. Reg./Daten ; ; ===============================================================; ; ; Einstellungen des PIC ; Notwendig? Oder redundant? ; DEVICE PIC12F629 ; DEVICE RC_OSC ; DEVICE WDT_OFF ; DEVICE PWRT_ON ; DEVICE PROTECT_OFF ; ; =============================================================== ; ; ORG 0CH ; Pause vars C1 DS 1 ; Unklar C2 DS 1 ; Unklar
in „Ampelschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
stb6nk60z.pdf
drain current (V= 0) GS VDS = Max ratingC T = 125 °C 50 µA I Gate-body leakage V = ± 20 V GSS current (DS= 0) GS ±10 µA V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D RDS(on) Static drain-source on VGS = 10 V,DI = 3 A 1 1.2 Ω resistance Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V DS= 8 V, D= 3 A 5 S fs C pF iss Input capacitance 905 Coss Output capacitance V DS= 25 V, f = 1 MHz, pF V = 0 115 pF Crss Reverse transfer GS 25 capacitance Coss eq2.Equivalent output V = 0, V = 0 to 480
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PDF
stb6nk60z.pdf
drain current (V= 0) GS VDS = Max ratingC T = 125 °C 50 µA I Gate-body leakage V = ± 20 V GSS current (DS= 0) GS ±10 µA V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D RDS(on) Static drain-source on VGS = 10 V,DI = 3 A 1 1.2 Ω resistance Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V DS= 8 V, D= 3 A 5 S fs C pF iss Input capacitance 905 Coss Output capacitance V DS= 25 V, f = 1 MHz, pF V = 0 115 pF Crss Reverse transfer GS 25 capacitance Coss eq2.Equivalent output V = 0, V = 0 to 480
in „Unterschiedliche Power MOSFET kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Schematics_v2.pdf
VCC +12V +12V D2 DS220W R23 D G Q1 U8 1Ω S VDD HO 0Ω R3 C7 100nF C13 IN_U_H HI HB HS MOTOR_U 4.7uF IN_U_L LI LO C8 GND R24 D 4.7nF G Q2 GND UCC27201DRMT S 1Ω R2 2.7Ω GND GND +12V VCC VCC U3 1 +12V 1 2 2 IN_U_L
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PDF
44-vish.pdf
SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available R (Ω) V = 5.0 V 0.028 • Logic-Level Gate Drive DS(on) GS RoHS* Qg(Max.) (nC) 66 • R DS(on)pecified at VGS = 4 V and 5 V COMPLIANT • 175 °C Operating Temperature Qgs(nC) 12 Qgd (nC) 43 • Fast Switching Configuration Single • Ease of Paralleling D • Simple
in „Aus Minus Plus machen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Vishay.pdf
SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available R (Ω) V = 5.0 V 0.028 • Logic-Level Gate Drive DS(on) GS RoHS* Qg(Max.) (nC) 66 • R DS(on)pecified at VGS = 4 V and 5 V COMPLIANT • 175 °C Operating Temperature Qgs(nC) 12 Qgd (nC) 43 • Fast Switching Configuration Single • Ease of Paralleling D • Simple
in „12V 2A per Raspberry Pi (3,3V) schalten“ · Analoge Elektronik und Schaltungstechnik ·
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ZXMHC6A07T8.pdf
ORDERING INFORMATION PINOUT DIAGRAM DEVICE REEL TAPE QUANTITY SIZE WIDTH PER REEL ZXMHC6A07T8TA 7’‘ 12mm 1000 units ZXMHC6A07T8TC 13’‘ 12mm 4000 units DEVICE MARKING • ZXMH C6A07 Top View ISSUE 2 - MAY 2005 1 ZXMHC6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage
in „DCC Decoder“ · Projekte & Code ·
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PDF
A100_ZXMHC6A07T8.pdf
ORDERING INFORMATION PINOUT DIAGRAM DEVICE REEL TAPE QUANTITY SIZE WIDTH PER REEL ZXMHC6A07T8TA 7’‘ 12mm 1000 units ZXMHC6A07T8TC 13’‘ 12mm 4000 units DEVICE MARKING • ZXMH C6A07 Top View ISSUE 2 - MAY 2005 1 ZXMHC6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage
in „H-Brücke ohne Mosfet-Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2SK1119_datasheet_en_20090929__1_.pdf
Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : R = 3.0 Ω (typ.) DS (ON) z High forward transfer admittance : |Yfs = 2.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (V DS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V DS = 10 V, D = 1 mA) Absolute Maximum
in „brauche hilfe beim Nachbau eines DC-DC-Converters“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
_FET-N__JCET_AO3400.pdf
Plastic-Encapsulate MOSFETS AO3400 N-Ch ann el Enhanceme tnMode Field Ef fect ransistor V (BR)SS R DS(on)AX D SOT-23 35m Ω@10V 30 V 40mΩ @ 4.5V 5.8A 1. GAT 52m Ω @ 2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION z High dense cell design for extremely low DS(ON) z Load/Power Switching z Exceptional on-resistance
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Datei
main.lst
\ VICVectAddr10: \ 00000000 DS8 4 \ In segment DATA_AN, at 0xfffff12c \ unsigned long volatile __data VICVectAddr11 \ VICVectAddr11: \ 00000000 DS8 4 \ In segment DATA_AN, at 0xfffff130 \ unsigned long volatile __data VICVectAddr12 \ VICVectAddr12: \ 00000000 DS8 4 \ In segment DATA_AN, at 0xfffff134 \ unsigned long volatile __data VICVectAddr13 \ VICVectAddr13: \ 00000000 DS8 4 \ In segment DATA_AN, at 0xfffff138 \ unsigned long volatile __data
in „LPC2103 Speicherproblem“ · Mikrocontroller und Digitale Elektronik ·
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Datei
TMAUS.TXT
,d1 move.w #200,d0 trap #2 rts aesbp: .DC.l contrl,globl,intin,intout,addrin,addrout .BSS contrl: .DS.w 12 globl: .DS.w 15 intin: .DS.w 2 intout: .DS.w 1 addrin: .DS.l 1 addrout: .DS.l 1 .DS.l 256 stack:
in „ATARI ST Assembler Datei“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Uhr.pdf
------------------------------------------------------------- 142 ; Bufferbereich 143 ; 144 oldio: ds 1h ; Sicherung Io-Byte 145 dstbeg ds 2 ; 146 dstend ds 2 ; 147 bzaehl db 0 ; Sicherung fuer Zaehlregister (B) 148 buflaeng ds 2 ; Bufferlaenge 149 recz ds 1 ; Recordzaehler 150 ; 151 efcb: db 0 ; Schreiben
in „Suche MOPPEL Projekt in Heft oder .PDF“ · Mikrocontroller und Digitale Elektronik ·
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PDF
176141-da-01-en-DS_1621_1621S.pdf
a START condition. TX RX <address,0> Bus Master sends DS1621 address; R/W = 0. RX TX ACK DS1621 generates acknowledge bit. TX RX ACh Bus Master sends Access Config command protocol. RX TX ACK DS1621 generates acknowledge bit. TX RX 02h Bus Master sets up DS1621
in „Temperatursensor DS1621 über I²C ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MC_product_selection_AN.pdf
Age, Application Maestro, CodeGuard, the buyer’s risk, and the buyer agrees to defend, indemnify and dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, hold harmless Microchip from any and all damages, claims, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, suits, or expenses resulting from such use. No licenses are
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NHD-0420CW-AY3-587980.pdf
2 for details Display-dot DH’ = "1": display shift enable DH’ = "0": dot scroll enable (POR) Shift DS[4:1]=1111b (POR) when DH’ = 1b Determine the line for display shift. DS1 = "1/0": 1st line display shift enable/disable Shift Enable 1 1 0 0 0 0 0 0 1 DS4 DS3 DS2 DS1 DS2 = "1/0": 2nd line display shift enable/disable DS3 = "1/0": 3rd line display shift enable/disable DS4 = "1/0": 4th line display shift enable/disable. HS[4:1]=1111b (POR) when DH’ = 0b Determine the line for horizontal smooth scroll. HS1 = "1/0": 1st
in „NHD-0420CW-AY3 4x20 Zeilen OLED in Betrieb nehmen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
temp_str.c
MSB_TEMP 0x11 // 17d NAME: SIGN DATA DATA DATA DATA DATA DATA DATA MSB of Temp #define LSB_TEMP 0x12 // 18d NAME: DATA DATA 0 0 0 0 0 0 LSB of Temp //#define AGING_OFFSET 0x0A // 16d NAME: SIGN DATA DATA DATA DATA DATA DATA DATA Aging Offset char *temperatur_str_rtc(int8_t temp_offset) // am DS3231
in „RTC DS3231 - Temperatur Daten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
538824.attach.pdf
Chassis Board CCA. The +12 Vdc output of U1 is fed via J3-1 to the series-parallel combination of flood lamps (DS1, DS2) and spot lamp (DS3) in the Lighting And Sensing Assembly. It is returned to chassis ground (E2) from the
in „Fotozellen-gesteuerte Brennschneidmaschine zuckt rum“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
538824.attach.pdf
Chassis Board CCA. The +12 Vdc output of U1 is fed via J3-1 to the series-parallel combination of flood lamps (DS1, DS2) and spot lamp (DS3) in the Lighting And Sensing Assembly. It is returned to chassis ground (E2) from the
in „Autogenbrenner elektrisch zünden“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
RTC_NVRAM_DUMP.c
for two BCD digits (*16) RTC_regs[fields] = bcd + temp2; // bcd = packed BCD value ready to send to DS1306 fields++; // Increment DS1306 register pointer } RTC_regs[reg_translate_LUT[SECONDS_REG]] &= 0x7f; RTC_regs[reg_translate_LUT[HOURS_REG]] &= 0x3f; // write 7 bytes of BCD data to ds1307 i2c_start
in „I2C mit DS3132 - Peter Fleury I2C implementierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2CSR275180R1165-ds201-m-b16-a30.pdf
PRODUCT-DETAILS DS201 M B16 A30 DS201 M B16 A30 FI/LS-Schalter Allgemeine Informationen Typ DS201 M B16 A30 Bestellnummer 2CSR275180R1165 EAN 8012542587217 Beschreibung DS201 M B16 A30 FI/LS-Schalter FI/LS-Schalter (RCBOs
in „Preiswerte RCBOs (Kombinierte FI/LS)“ · Haus & Smart Home ·
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PDF
tle5206_motorbridge.pdf
CMOS/TTL compatible inputs with hysteresis No crossover current Internal freewheeling diodes P-DSO-20-12 Wide temperature range; − 40 °C < T j 150 °C Type Ordering Code Package TLE 5206-2 Q67000-A9290 P-TO220-7-11 TLE 5206-2GP Q67006-A9239 P-DSO-20-12 TLE 5206-2G Q67006-A9323 P-TO263-7-1 TLE 5206-2S Q67000
in „Diskrete H-Brücke“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSS138.pdf
Drain-Source Breakdown Voltage 50 - - V VGS =0V, D=250µA V GS(th) Gate-Source Threshold Voltage 0.5 - 1.5 V V DS=VGS ,D=1mA GSS Gate-Source Leakage Current - - ± 0.1 μA VDS=0V, VGS=±20V - - 0.1 μA V DS=25V, VGS=0V DSS Zero Gate Voltage Drain Current - - 0.5 μA V DS=50V, VGS=0V - 5.6 10 Ω V GS=2.75V, D<200mA, R DS(ON) Drain-Source On-Resistance TA=-40 to +85 ° C - - 3.5 Ω VGS =5.0V,D=200mA VDS =25V, D=200mA, gFS Forward Transconductance 100 - - mS f=1.0KHz Dynamic Characteristics (T Ambient25ºC unless noted otherwise
in „Versorgungsspannung uC und Display“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MIC5233-3.3YS-microchip-20221000.pdf
Voltage. Temperature. FIGURE 2-9: Ground Pin Current vs. FIGURE 2-12: Ground Pin Current vs. Temperature. Input Voltage. DS20006033E-page 6 2018-2022MicrochipTechnologyInc.anditssubsidiaries MIC5233 FIGURE 2-13: Input Current vs. Supply FIGURE 2-16: Load Transient Response
in „STM32F302C8T6 Schaltplanüberprüfung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FDP060AN08A0.pdf
Drain to Source Breakdown Voltage D = 250µA, GS = 0V 75 - - V 0 6 I Zero Gate Voltage Drain Current V DS = 60V - - 1 µA A DSS V GS= 0V TC= 150 C - - 250 N 0 IGSS Gate to Source Leakage Current V GS= ±20V - - ±100 nA 8 A On Characteristics 0 — VGS(TH) Gate to Source Threshold Voltage V GS= V DS,DI = 250µA
in „Simulation IR2183 Halbbrückentreiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
17060711197339.pdf
6.4Buck-boost 结构 可以保持 5S左右 R1=1M (Vomax−13)/5≤ R2 ≤ (Vomin−13)/1.5 其中： Vomax 是输出的最大电压 Vomin 是输出的最小电压 S41xx-DS-1p1 Page 6 of 10 S41xx 系列开关调色温控制芯片 SOP8 封装说明 S41xx-DS-1p1 Page 7 of 10 S41xx 系列开关调色温控制芯片 Min DIP8 封装说明 S41xx-DS-1p1 Page 8 of 10 S41xx 系列开关调色温控制芯片 SOT23-6 封装说明 S41xx-DS-1p1 Page 9 of 10 S41xx 系列开关调色温控制芯片
in „LED Lampe, automatische Farbtemperatur Umschaltung abschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP1700.pdf
150 175 200 225 250 Load Current (mA) Load Current (mA) FIGURE 2-9: Output Voltage vs. Load FIGURE 2-12: Dropout Voltage vs. Load Current (V R = 1.8V). Current (V R = 2.8V). DS20001826D-page 6 2005-2016 Microchip Technology Inc. MCP1700 Note: Unless otherwise indicated: V = 1.8V, R OUT = 1 µF Ceramic
in „ESP-01 mit LiPo betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2003161835_ZILLTEK-ZTP7192MS_C481285.pdf
Typical Characteristics VIN 12V, V O 3.3V, L1 = 4.7μH, C1 = 22μF, C2 = 22μF x 2, A = +25°C, unless otherwise noted. Start Up (ILoad=1A) EN Vout Shut Down (ILoad=1A) EN Vout Output Ripple (ILoad=2A) Vout Output Ripple (ILoad=1A) Vout
in „Ruhe-Stromaufnahme MP2315 Ali-Board zu hoch“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
drm001.pdf
1]; break; case _10BIT : // 10bit resolution, 0...1023 ds_adjust_ptr = &ds_adjust[2]; break; case _11BIT : // 11bit resolution, 0...2047 ds_adjust_ptr = &ds_adjust[3]; break; case _12BIT : // 12bit resolution, 0...4097 ds_adjust_ptr = &ds_adjust[4]; break;
in „AVR ATTiny84A mit C++ Werte an bestimmte Speicherstelle schreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
L6206.pdf
A 5 20 VSA PROGCL A 9 28 PROGCL B IN1 10 27 IN2 GND 6 19 GND A B GND 7 18 GND INA 11 26 INB SENSEA 12 25 SENSEB OUT1 B 8 17 VSB OCD A 13 24 OCD B OCD B 9 16 OUT2 B N.C. 14 23 N.C. SENSE 10 15 VBOOT B OUT1A 15 22 OUT1B IN1B 11 14 ENB N.C. 16 21 N.C. IN2B 12 13 PROGCL B N.C. 17 20 N.C. GND 18 19 GND D99IN1089A
in „l6206 Datenblatt Fehler?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
nrf24l01_drv.c
nach dem Senden erfolgt, sondern auf die Auslösung des ISR gewartet wird, ob TX erfolgreich war (TX_DS) oder nicht geantwortet wurde (MAX_RT) */ /* INT Maskenbits im CONFIG Reg löschen */ uint8_t val = RF_ReadRegSingle(NRF24L01_REG_CONFIG); /* MAX_RT und TX_DS ein -> 0*/ val &= ~((1 << NRF24L01_MASK_MAX_RT) | (1 << NRF24L01_MASK_TX_DS)); /* RX_DR aus -> 1 */ val |= (1 << NRF24L01_MASK_RX_DR); RF_WriteRegSingle(NRF24L01_REG_CONFIG,val); /* Setze Merker, dass ISR Bescheid weiss, dass Modul auf MAX_RT oder TX_DS wartet */ f_WaitForEoTX
in „NRFL24L01+ - Immer Ärger mit den Paarungen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
VFD_2_20.A51
_BUFSIZE EQU 20 _ClearScr EQU 1Fh ;**************************************** DSEG at 10h curState: ds 1 ;10h Byte11: ds 1 StrLen: ds 1 ;12h chksum: ds 1 ;13h RecPtr: ds 1 ;14h RecPtr CursorPos: ds 1 ;15h LinePtr RecBuffer: ds _BUFSIZE+1 ;16h Line1: ds _BUFSIZE ;2Bh Line 1 Line2: ds _BUFSIZE ;3Fh Line 2 StackP: ds 1 ;*********************************** CSEG at 0 AJMP Init org 3h RETI org 0Bh RETI org 13h RETI org 1Bh RETI org 23h LJMP Serial_IRQ ;_0023 ;*********************** org 30h Init: ;_0030: MOV SP, #StackP
in „VFD "Kundendisplay"-Ansteuerung“ · Mikrocontroller und Digitale Elektronik ·