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Bild
CAD-Ansicht eines Leiterplatten-Layouts mit Bestückungsdaten
Top Bottom 9 C1 0 C10 10 C11 100 C12 100uF/10V C13 100uF/10V C14 100uF/16V C15 16 C16 10uF C17 15pF C18 1k C19 1mF C20 200 C21 20m C22 22uF C24 22uF/16V C25 25MHz C26 32.768kHz C3 475 C30 47uF C31 47uF/6.3V C32 6 Layers C33 690 C34 75 C52 C54 C44 C19 C18 C20 C16 C15 100uF/10V 100uF/10V 8X02N DS26LU32 DS26LU32
in „Altium Designer - Assistent zur manuellen Bauteilbestückung“ · Platinen · · Layouts
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Datei
main.c
main(void) { uint16_t temp = 0; DDRB |= (1 << PB0); PORTB |= (1 << PB0); usart_init(); while(1) { ds18b20_request(); PORTB &= ~(1 << PB0); _delay_ms(1000); temp = ds18b20_data(); char buffer[17] = {0}; char *s = buffer; itoa(temp, s, 2); while (*s) { USART_SendByte(*s++); } USART_SendByte('\n'); USART_SendByte
in „DS18B20 Code funktioniert nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Disketten_Info.pdf
wird. Boot Sel Zuordnung der Auswahl- und Laufwerk am Interface Motorsteuersignale *) 1 0 1. 2. 3. DS0 6 FDS0, ME0 6 FDME0 0 0 DS1 6 FDS1, ME1 6 FDME1 0 1 2 DS2 6 FDS2, ME2 6 FDME2 DS0 6 FDS1, ME0 6 FDME1 0 1 DS1 6 FDS0, ME1 6 FDME0 1 0 2 DS2 6 FDS2, ME2 6 FDME2 DS0 6 FDS2, ME0 6 FDME2 1 0 DS1 6 FDS1, ME1 6 FDME1 2 1 0 DS2 6 FDS0, ME2 6 FDME0 1 1 reserviert *): Boot-Laufwerk Tabelle 3.2 Umordnung der Laufwerksauswahl (nach: Intel) D AS DISKETTENSUBSYSTEM 18 Hauptzustandsregister (Main Status Register MSR) Über dieses
in „Floppy FDD Diskette an AVR Mikrocontroller ATmega Beispiele Assembler“ · Projekte & Code ·
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PDF
S9111A_Ebay_PowerModulePowersupply.pdf
LED 驱动电源 线性电源和 RCC 开关电源升级换代 其它辅助电源等 典型应用 + Vout - AC VCC C FB GND CS 图 1 S9111A 典型应用图 S9111A_CN_DS_Rev.1www.chip-hoWUXI Chip Hope Micro-electronicsLTD Confidential– Customer Use Only S9111A 低功耗原边反馈控制芯片 定购信息 定购型号 封装 包装形式 打印 盘装 S9111 S9111A SOP7 3000 颗/盘 Axxxx 管脚封装 xxxx：芯片批号 VCC GND A S9 x 1 FB x 1
in „China PowerPanelMeter PZEM-022“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
23x256.pdf
a paragraph. DS22100C-page 18 Preliminary © 2009 Microchip Technology Inc. 23A256/23K256 THE MICROCHIP WEB SITE CUSTOMER SUPPORT Microchip provides online support via our WWW site at Users of Microchip products can
in „AVR: Port wiederholt schnellstmöglich auslesen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRL1004.pdf
GS = 0 V Single Pulse 0.0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100 V SD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area ForwardVoltage 4 www.irf.com IRL1004 140 R V D LIMITED BY PACKAGE DS 120 V GS D.U.T. )100 RG ( -VDD
in „Mosfet als Schalter 100W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
––– ––– 17.5 mΩ VGS = 10V,DI = 25A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 19 ––– ––– S VDS = 25V,DI = 25A ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Mosfet IRFZ44N 12V schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IPP_B_I80N04S4_04-DS-v01_00-en-1518478.pdf
VDS=V GS, D =35µA 2.0 3.0 4.0 Zero gate voltage drain current IDSS VDS=40V, V GS=0V - 0.02 1 µA VDS=18V, V GS=0V, 2) - 1 20 Tj=85°C Gate-source leakage current IGSS VGS =20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) VGS =10V, ID=80A - 4.3 4.6 mΩ V =10V, I =80A, GS D - 3.9 4.2 SMD version
in „Hilfe bei Halbbrückenschaltung benötigt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FDC638P-D.PDF
–3.8 A 52 65 V GS = –4.5 V, D = –4.5 J =125°C 54 72 ID(on) On–State Drain Current V GS = –4.5 V, V DS= –5 V –20 A g Forward Transconductance V = –10 V, I = –4.5 A 15 S FS DS D Dynamic Characteristics C iss Input Capacitance V DS = –10 V, V GS = 0 V, 1160 pF C oss Output Capacitance f = 1.0 MHz 195 pF
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLML6244TRPBF_Datenblatt.pdf
PD - 97535A IRLML6244TRPbF ® HEXFET Power MOSFET V DS 20 V V GS Max ±12 V * R DS(on) max 21.0 m (@V GS = 4.5V) ' R DS(on) max 27.0 m 6 Micro3TM (SOT-23) (@V GS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features
in „passender FET wie beschalten?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
test.c
*******************************/ #include <stdlib.h> #include <avr/io.h> #include <ow.h> #include <ds18x20.h> #include "lcd.h" #include "dual.h" #define MaxDevice 1 #define F_CPU 8000000 ow_romcode_t romcode1[MaxDevice]; //Arrays die die Geräteadresse der onewire sensoren char rom_num1; //hier werden
in „Falsche TEMP mit DS1820“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RJH60F5DPQ.pdf
Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT R07DS0326EJ0200 Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage V CE(sat) 1.37 V typ. CI = 40 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode
in „Inverter Elektroden-Schweißgerät abgeraucht -> IGBT defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
csd18502kcs.pdf
BVDSS Drain to Source Voltage VGS = 0V,DI = 250μA 40 V DSS Drain to Source Leakage Current VGS = 0V, DS = 32V 1 μA I Gate to Source Leakage Current V = 0V, V = 20V 100 nA GSS DS GS VGS(th) Gate to Source Threshold Voltage VDS= V GS,DI = 250μA 1.5 1.8 2.1 V VGS = 4.5V,DI = 100A 3.3 4.3 mΩ RDS(on) Drain
in „Netzteil: 2 Mosfets parallel OK?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_Texas_Instruments.pdf
, L = 0.1 mHG R = 25 Ω 156 mJ (1) Max R θJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. R DS(on) vs V GS Gate Charge 10 10 ) 9 T C 25°C, ID = 100 A 9 ID= 100 A : T C 125°C, ID = 100 A V V DS= 20 V ( 8 e 8 c a a 7 o 7 i V e 6 c 6 R u a 5 S 5 S 4 t 4 n t - 3 a 3 n - S 2 S 2 D V R 1 1 0 0 0 2 4
in „Übertragung eines Pspice-Makromodells(OpV) in LTSpice“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF-610-Datasheet.pdf
Zero Gate Voltage Drain Current DSS DS GS µA V DS = 160 V, VGS = 0 V, TJ= 125 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V ID= 2.0 A b - - 1.5 Ω Forward Transconductance g fs V DS= 50 V, ID= 2.0 Ab 0.8 - - S Dynamic Input
in „Schaltung für logic level to high voltage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPD053N06N_Infineon.pdf
. output characteristics 6 Typ. drain-source on resistance I =f(V ); T =25 °C R =f(I ); T =25 °C D DS j DS(on) D j parameter: V GS parameter: V GS 180 16 10 V 7 V 160 6 V 14 5 V 5.5 V 6 V 140 12 120 ] 10 5.5 V W ] 100 [ [ ) 8 I ( 80 D R 6 7 V 60 5 V 10 V 40 4 2 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20
in „12V mit Logic Mosfet schalten - funktioniert nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2117592.pdf
.................................................. 18 5.3 ESD ANDT RANSIENT EST(APPLIES TOAN AND USB EXTERNAL CONNECTIONS ONLY ................... 18 5.4 M AGNETICFIELDTEST.................................................................................
in „CX870-31B Jukeblox SMCS Microchip Firmware Update“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOSFET-Basics_AN-9010.pdf
i is smaller than I , and when it is in a state where the D is being conducted, V maintains D O F DS the VDD , but the graph shows the voltage which is a little less thaDDV. This is caused by the voltage drop due to the existing inductance in the line of the circuit. Rev D, July 2000 18 The following
in „MOSFET ohne Body-Diode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2660_DC_Inverter.pdf
Resistance vs Supply Voltage DS012911-7 DS012911-8 DS012911-9 Output Source Efficiency vs Load Resistance vs Output Voltage Drop Temperature Current vs Load Current DS012911-11 DS012911-12 DS012911-10 3 www.national.com 1 6 2 Typical
in „Negative Betriebsspannung erzeugen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
B154EW04_VB.pdf
case is connected with signal GND. 6 B154EW04 V.B Page /23 4-2 Interface block diagram Using receiver：DS90CF364(National semiconductor) Corresponding Transmitter：DS90C363,DS90C383(National semiconductor） （ Computer side ） (TFT-LCD side ) DS90C*363 DS90CF364 6 TxIN 0～ 5 RXIN0+(6) RxOUT0～5 6 R0～R5 R0～R5 6
in „Notebookdisplay als "normalen" Bildschirm verwenden“ · PC Hard- und Software ·
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PDF
PA100D.pdf
PB6(XTAL1/TOSC1/PCINT6) ADC6 22 ADC_FWD /INT_SER 15 IRQ V- 22 Q1 8 ADC7 ADC_REV MOSI 16 DIN C1+ 23 18,432 M PB7(XTAL2/TOSC2/PCINPD0(RXD/PCINT16) 30 MSCK 17 SCLK C2+ 24 B PD1(TXD/PCINT17) 31 /SS 18 CS C2- 25 JP8 B 4 VCC PD2(INT0/PCINT18) 32 PTT_IN 1 6 VCC PD3(INT1/OC2B/PCINT19) 1 VOX_IN SG1 14 TX 2 PD4
in „Schutzbeschaltung Analog-Eingänge / Durchsicht Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LTC3824fg.pdf
estimatedas1.7)isanempirical factorinverselyrelated tothegatedrivecurrentandhastheunitof1/Amps.Theδ V Ds the catch diode D1 forward voltage and f is the termaccountsforthetemperaturecoefficientoftheR switching frequency. DS(ON) of the MOSFET, which is typically 0.4%/°C. C RSS is the A small inductance will
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
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Bild
Schaltplan mit ICs und Anschlüssen
ADC0) 23 ADC1) 24 ADC2) 25 ADC3) 26 I2C/SDA) 27 SCL/SCK) 28 (RXD) 2 (TXD) 3 (INT0) 4 (INT1) 5 DS(T1) 11 (AIN0) 12 (AIN1) 13 OC(ICP) 14 OC1A) 15 OC1B) 16 MISO) 18 (SCK) 19 IC3 1 I1 16 O1 2 I2 15 O2 3 I3 14 O3 4 I4 13 O4 5 I5 12 O5 6 I6 11 O6 7 I7 10 O7 8 GND CD+ IC4 1 I1 18 O1 2 I2 17 O2 3 I3 16
in „LEDs mit gemeinsamen GND schalten“ · Analoge Elektronik und Schaltungstechnik · · Schaltpläne
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PDF
IRFB3006_IR.pdf
On-Resistance vs. Temperature 16000 VGS = 0V, f = 1 MHZ 16 C = C + C , C SHORTED ID= 170A iss gs gd ds V V = 48V Crss = gd ( DS C = C + C g V DS= 30V )12000 oss ds gd l 12 F o ( C iss e c r n o i 8000 S 8 a t a e C a C G S 4 4000 Coss G V Crss 0 0 0 40 80 120 160 200 240 280 1 10 100 QG Total Gate Charge
in „Motor PWM Steuerung, Mosfet Problem“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Values.txt
2,2K 21 1,5nF 20 TLC272 20 G6K-2F 20 AT90S2313P 20 180R 19 SB130 19 P1-13 19 1uF 18 TPSTP10SQ 18 OR 18 LF351N 18 FT232RL 18 BC337 18 B 18 27p 18 1N4148DO35-10 18 15p 18 15k 17 BC847 17 560 17 47n 17 200k 16 SE14 16 60R 16 470pF 16 22 16 12 Ohm 16 12k 16 10-XX 16 1,0 uF 16 10 nF 16 100nf
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
BST-BMP180-DS000-07.pdf
BMP180 Data sheet Document revision 2.3 Document release date 25 May 2011 Document number BST-BMP180-DS000-07 Technical reference code(s) 0 273 300 244 Notes Data in this document are subject to change without notice. Product photos and pictures are for illustration purposes only and may differ from the
in „Suche Projektpartner für Kalmanfilter-Implementierung“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
MOSFET_Gate_Driver_Circuit.pdf
because the gate resistor value and the gate voltage restrict the gate charge current of a MOSFET. vDS i D ) ) V ( ( ( S iD G vD v @R 31 Ω @R =3 Ω vDS iD ) ( A V S ( ( vD iD G v @R 310 Ω @R =30 Ω t (μs) t (μs) vDS iD ) A V ( ( ( D iD G v v @R =30 Ω @R =30 Ω t (μs) t (μs) Figure 4.6 Switching-off waveforms
in „MOSFET npn/pnp Driver“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_Gate_Drive_Circuit_.pdf
because the gate resistor value and the gate voltage restrict the gate charge current of a MOSFET. vDS i D ) ) V ( ( ( S iD G vD v @R 31 Ω @R =3 Ω vDS iD ) ( A V S ( ( vD iD G v @R 310 Ω @R =30 Ω t (μs) t (μs) vDS iD ) A V ( ( ( D iD G v v @R =30 Ω @R =30 Ω t (μs) t (μs) Figure 4.6 Switching-off waveforms
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RequiresAcrobat6.pdf
from http://www.datasheetarchive.com. GF9926 Dual N-Channel Enhancement-Mode MOSFET LowV GS(th) V DS 20V R DS(ON) 30 ΩmI 6.0AD H C ® E N T R E T F D1 D1 D2 D2 E N 8 7 6 5 G SO-8 0.189 (4.80) Q1 Q2 8 5 1 2 3 4 0.157 (3.99) 0.150 (3.81) S1 G1 S2 G2 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches 0.05
in „Ersatz-MosFet für GF9926“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Thermometer_mit_3_RundanzeigenV2.1.bas
'************************************************* '* Thermometer,Anzeige mit Schrittmotoren '* DS18S20 als Temperatursensor '************************************************* 'V2.0 'Verbesserungen: 'Beschleunigung und Verzögerung eingebaut 'Variablen optimiert 'DuoLed aktiviert 'V2.1 '2 Sensoren
in „Atmega8 Thermometer mit Schrittmotoranzeige“ · Projekte & Code ·
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PDF
Schematics_v2.pdf
VCC +12V +12V D2 DS220W R23 D G Q1 U8 1Ω S VDD HO 0Ω R3 C7 100nF C13 IN_U_H HI HB HS MOTOR_U 4.7uF IN_U_L LI LO C8 GND R24 D 4.7nF G Q2 GND UCC27201DRMT S 1Ω R2 2.7Ω GND GND +12V VCC VCC U3 1 +12V 1 2 2 IN_U_L +12V D1 DS220W
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PDF
LMD18200.pdf
factory. Typical Performance Characteristics V vs Flag Current R (ON) vs Temperature R (ON) vs SAT DS DS Supply Voltage DS010568-16 DS010568-17 DS010568-18 Supply Current vs Supply Current vs Supply Current vs Supply Voltage Frequency (V S = 42V) Temperature (V S = 42V) DS010568-19 DS010568-20 DS010568-21 Current Sense Output Current Sense vs Load Current Operating Region DS010568-22 DS010568-23 www.national.com 4 M D Test Circuit 1 2 0 0 DS010568-8 Switching Time Definitions DS010568-9 Pinout Description (See Connection Diagram) it is also necessary to apply logic high
in „Halbbrücke für BLDC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
VWM200-01P.pdf
technology: - -low R DSon R DSon V GS= 10 V;D = 100 A 3.6 5.2 mΩ -optimized intrinsic reverse diode VGSth V DS= 20 V;D = 2 mA e 2 4 V package: I V = 100 V;V = 0 V; T = 25°C 0.02 mA -high level of integration DSS DS GS TVJ 125°C 0.25 mA -solder terminals for PCB mounting s -isolated DCB ceramic base plate IGSS
in „Umrichter für E-Kart Anwendung 60V / 120A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl2203ns.pdf
20µs PULSE WIDTH T = 25 C TJ= 175 C 1 J 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 100A c D ) n ( s n TJ= 25 C s 2.0 e e u n C TJ= 175 C O ) c e ed1.5 u r zl o100
in „FETs - 5V steuerspannung - selbstleitend selbstsperrend“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N-UMW.pdf
Power MOSFET Description The UMW IRL540N uses advanced trench technology and design to provide excellenDS(ON)ith low gate charge. It can be used in a wide variety of applications. General Features ● V DS = 100V,D =30A RDS(ON)< 28mΩ @ V GS0V (Typ:24 mΩ) Schematic diagram ● Special process technology for high
in „Problem mit Mosfet IRL540 an 52V, öffnet nicht mehr“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7416_datasheet.pdf
20V GS Q g Total Gate Charge ––– 61 92 ID= -5.6A Q Gate-to-Source Charge ––– 8.0 12 nC V = -24V gs DS Q gd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 18 ––– VDD = -15V tr Rise Time ––– 49 ––– ID= -5.6A ns td(off) Turn-Off Delay Time ––– 59 –––
in „Datenblatt / Prinzip richtig verstanden?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
RFM70_HH.c
, RX_ptr,0); status = SPI_send_get(FLUSH_TX, TX_ptr, RX_ptr,0); status |= STATUS_RX_DR | STATUS_TX_DS | STATUS_MAX_RT; // clear RX_DR or TX_DS or MAX_RT interrupt flag SPI_send_get(WRITE_REG|STATUS, &status, RX_ptr,1); // update status reg RFM70_disable; if (mode) status = MASK_RX_DR | EN_CRC | CRCO
in „RFM70 arbeitet nicht zuverlässig“ · HF, Funk und Felder ·
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PDF
K4097.pdf
2SK4097LS D.C.≤0.5% 10V V 0V 50Ω DD G 2SK4097LS P.G R GS=50Ω S No.A0775-2/5 2SK4097LS I -- V I -- V 30 D DS 30 D GS Tc=25°C V DS =20V 25 25 Tc= --25°C 15 V 25°C A 1 0V A - 20 8V - 20 ID ID 7 5°C t t e 15 e 15 u u C C a 10 a 10 r r D D 6V 5 5 V =5V GS 00 5 10 15 20 25 30 00 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, V DS -- V IT12372 Gate-to-Source Voltage, V GS -- V IT12373 R DS (on) -- V GS R DS (on) -- Tc 2.0 1.6 ID= 5 A 1.8 1.4 Ω Ω - 1.6 - ) ) 1.2 o 1.4 o (S (S 1.0 D 1.2 D 5A r R, r R, ,ID= o c 1.0 o c 0.8 10V -
in „MOSFET (K4097) Ersatztyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SI4946BEY.pdf
Static Drain-Source Breakdown Voltage VDS VGS = 0 V,DI = 250 µA 60 V V Temperature Coefficient ΔV /T 53 DS DS J D = 250 µA mV/°C VGS(th)Temperature Coefficient ΔVGS(th)TJ - 6.7 Gate-Source Threshold Voltage VGS(th) V DS= V GS, D = 250 µA 1.0 2.4 3.0 V Gate-Source Leakage GSS VDS = 0 V, GS = ± 20 V ± 100 nA
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MX-500P-11.pdf
reflected back to the power unit by the copper core. The On/Off switch atop the power unit controls the 18V power supply U8, which runs all the supervisory circuits. When the 18V supply is off, Q6 turns off thereby causing Q7 to turn on and disable the RF generator. Q5 and Q8 control a small DC bias voltage
in „METCAL MX-500P-11 Technische Dokumentation“ · Mechanik, Gehäuse, Werkzeug ·
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Datei
DS1820LCD.asm
first .def temp1h = r11 .def temp2l = r12 .def temp2h = r13 .def a0 = r16 .def a1 = r17 .def a2 = r18 .def a3 = r19 .def temp = r20 .def nibbl = r21 .def data = r22 .def txt = r23 .def counter1 = r24 .def counter2 = r25 .def counter3 = r26 .equ SEARCH_FIRST = 0xFF ; start new search .equ CONVERT_T =
in „1-Wire und DS1820 Testprog“ · Mikrocontroller und Digitale Elektronik ·
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doc6241-1369051.pdf
INTERFACE 100NF 31 AUXP C9 10µF VREF 1 32 AUXN C6 C7 3V3 C10 100NF 100NF R6 220R 5 J3 3 100µF R7 GND_DAC DS2 GREEN 6V3 4 HSR MCLK 20 47R USERLED2 + SDIN 17 MCLK R8 220R LRFS SDIN DS1 GREEN C11 HSL BCLK 19 LRFS USERLED1 2 + 3 18 BCLK 100µF 6V3 INGND GNDB GNDD 4 1 8 33 23 RIGHT CLICK 3.5 PHONEJACK STEREO BP2
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IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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irf7314.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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viper20.pdf
VIPer20/SP/DIP VIPer20A/ASP/ADIP ∪ SMPS PRIMARY I.C. TYPE VDSS n R DS(on) VIPer20/SP/DIP 620V 0.5 A 16 VIPer20A/ASP/ADIP 700V 0.5 A 18 PENTAWATT HV PENTAWATT HV (022Y) FEATURE ADJUSTABLE SWITCHING FREQUENCY UP TO200KHZ 10 CURRENT MODE CONTROL 1 SOFTSTART AND SHUT DOWN
in „Besonders sparsame Standby-Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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SCHALTPLAN.pdf
LED-THERMOMETER DS18B20 1-WIRE 1N4001 DS18B20 5V 8...16V 10µ 10µ 9V 10µ Programmier-Adapter 1 5 1 10µ 1 8 7 6 5 4 3 2 1 0 9 8 7 6 5 2 2 2 2 2 2 2 2 2 1 1 1 1 1 SA23 SA23 SA23 t 5 4 3 2 1 0 D F ) C 5 4 3 2 1 a a a a C C
in „Jumbo-LED-Anzeige beschalten“ · Mikrocontroller und Digitale Elektronik ·
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BUK100-50.pdf
clamping voltage V IS0 V; I DM= 1 A; tp≤ 300 s; - - 70 V δ ≤ 0.01 IDSS Zero input voltage drain current V DS= 12 V; VIS 0 V - 0.5 10 A IDSS Zero input voltage drain current V DS= 50 V; VIS 0 V - 1 20 A I Zero input voltage drain current V = 40 V; V = 0 V; T = 125 ˚C - 10 100 A DSS DS IS j R DS(ON) Drain-source
in „MOSFET SCHMILZT“ · Analoge Elektronik und Schaltungstechnik ·
