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FQB34P10.pdf
F Q B 3 4 November 2013 P 1 0 FQB34P10 — P ® - P-Channel QFET MOSFET C h 100 V, -33.5 A, 60 mΩ n n e l Description Features Q This P-Channel enhancement mode power MOSFET is • -33.5 A, -100 V,DS(on) 60 mΩ (Max.) @ VGS = .10 V, F produced using Fairchild Semiconductor’s proprietary plI = -16.75 A E stripe and DMOS technology. This advanced MOSFET D T® technology has been especially tailored to reduceate • Low Gate Charge (Typ. 85 nC) resistance, and to provide superior switching performance M and high avalanche energy strength. These devices
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FQP50N06L-244346.pdf
F Q P 5 0 November 2013 N 6 L FQP50N06L — ® N N-Channel QFET MOSFET - C 60 V, 52.4 A, 21 mΩ a n Description Features n e This N-Channel enhancement mode power MOSFET is • 52.4 A, 60 V,DS(on) 21 mΩ (Max.) @ GS = 10 V, Q produced using Fairchild Semiconductor’s proprietary I = 26.2 A F planar stripe and DMOS technology. This advanced D E MOSFET technology has been especially tailored to reduceow Gate Charge (Typ. 24.5 nC) T ® on-state resistance, and to provide superior switching Low Crss (Typ. 90 pF) M performance and high avalanche energy
in „Mosfet Treiber (low side) mit current sense Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
main_14032021.c
define LED LATBbits.LATB3 // output for LED #define T1 LATDbits.LATD7 // output -T1 high side left MOSFET #define T2 LATDbits.LATD6 // output -T2 high side right MOSFET #define T3 LATDbits.LATD5 // output -T3 low side left MOSFET #define T4 LATDbits.LATD4 // output -T4 low side right MOSFET #define B7
in „LCD verliert Zeichen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN4803.pdf
another. In the past, power hand off was often done with either lossy OR-ing diodes or discrete MOSFET-comparator circuits that can become complex when "sneak" current paths and switch timing are considered. Fortunately, many charger ICs (Figure 7) now include power hand-off control. Integrating this
in „Self-Powered / USB-Powered umschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
qsc_gx5_sh_ts_sch.pdf
50v C44 60v R101 1 MTP45N06 2+ 2- R185 1 Q42 MMST3904 3 C63 R163 1 MTP45N06 1 1 Vrms, 1k Hz 2 Q15 MOSFET N-CHANNEL 1 MOSFET N-CHANNEL 5.90K 47.5K 220PF 100K R68 MMBTA42 3 10UF 10 61.5v 3 JACK 100K MMBTA42 3 10UF 10 3 62v +MID J13 J9 1 1 PCNT C80 1 PCNT 5 PCNT 1 PCNT 16v 7.50K 3 1 20 PCNT 1 PCNT D18 1
in „QSC GX5 negative Spannung am Ausgang“ · Mikrocontroller und Digitale Elektronik ·
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PDF
qsc_gx5_sh_ts_sch.pdf
50v C44 60v R101 1 MTP45N06 2+ 2- R185 1 Q42 MMST3904 3 C63 R163 1 MTP45N06 1 1 Vrms, 1k Hz 2 Q15 MOSFET N-CHANNEL 1 MOSFET N-CHANNEL 5.90K 47.5K 220PF 100K R68 MMBTA42 3 10UF 10 61.5v 3 JACK 100K MMBTA42 3 10UF 10 3 62v +MID J13 J9 1 1 PCNT C80 1 PCNT 5 PCNT 1 PCNT 16v 7.50K 3 1 20 PCNT 1 PCNT D18 1
in „QSC GX5 negative Spannung am Ausgang“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN2662-Sensorless-Drive-forSingle-and-Two-PhaseBLDC-Motor-00002662A.pdf
phase BLDC, the CWG Forward and Reverse modes or CWG Steering mode can be used to drive the H-Bridge MOSFETs alternately, while in the 2-phase the two MOSFETs are driven ON and OFF. MOSFET switches are used to alternately energize the two motor windings, allowing current to flow. Figure 5-1 shows the CWG Drive mode on the MOSFET switch driver of the two-phase BLDC motor. To learn more about CWG and how to implement its different drive modes, refer to TB3118, Complementary Waveform Generator Technical Brief (DS90003118): (http
in „EBM-Papst EC Motor“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FTDI_UM245R_Parallel_auf_USB.pdf
then high during USB suspend. Can be used to control power to external logic P-Channel logic level MOSFET switch. Enable the interface pull-down option when using the PWREN# pin in this way. 12 RD# I/O Enables the current FIFO data byte on D0...D7 when low. Fetched the next FIFO data byte (if available
in „FT245R sporalischer Initialisierungsfehler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
L6207.pdf
device features a non-dissipative overcurrent protection on the high-side Power 2UGHULQJ▯QXPEHUV▯ MOSFETs and thermal shutdown. /▯▯▯▯1▯▯3RZHU',3▯▯▯ /▯▯▯▯3'▯▯3RZHU62▯▯▯ /▯▯▯▯'▯▯62▯▯▯ February 2014 DocID7513 Rev 2 1/33 This is information on a product in full production. www.st.com Contents L6207 Contents
in „Schrittmotor mit L6207“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Evolutionary_Audio.pdf
stage ther signis atypicalexample, in that it offers mal dissipation is within acceptable Power mosfets. Junction transistors suf a very low steady-state THD figure limits. fer from a number of inherent prob (0.0002% THD at 1kHz), a very large The output-stage low-voltage power lems; such as hole
in „Eigenbau Verstärker - Verbesserungen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1822670.pdf
device features a non-dissipative overcurrent protection on the high-side Power 2UGHULQJ▯QXPEHUV▯ MOSFETs and thermal shutdown. /▯▯▯▯1▯▯3RZHU',3▯▯▯ /▯▯▯▯3'▯▯3RZHU62▯▯▯ /▯▯▯▯'▯▯62▯▯▯ February 2014 DocID7513 Rev 2 1/33 This is information on a product in full production. www.st.com Contents L6207 Contents
in „Treiberstufe fuer Faulhaber Schrittmotor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Evol._Audio_ks_-_WW.pdf
stage ther signis atypicalexample, in that it offers mal dissipation is within acceptable Power mosfets. Junction transistors suf a very low steady-state THD figure limits. fer from a number of inherent prob (0.0002% THD at 1kHz), a very large The output-stage low-voltage power lems; such as hole
in „Quasi Komplementär und Komplementäre Transistoren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
3642fc.pdf
the internal highside can be used to increase the effective RUN comparator power switch (P-channel MOSFET) is turned on and the hysteresis. inductorcurrentbeginstorampup.Theinductorcurrent Aninternal1mssoft-startfunctionlimitstheramprateof increases until either the current exceeds the peak cur- the output
in „Bauteil LDYM N188 817“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM3409__LM3409HV.pdf
Controller for High Power LED Drives General Description Features 4 The LM3409/09HV are P-channel MosFET (PFET)■c2Ω, 1A Peak MosFET Gate Drive 0 trollers for step-down (buck) current regul■tV Range: 6V to 42V (LM3409) H wide input voltage range, high-side differe■tV Range: 6V to 75V (LM3409HV) V with
in „High Power LED Stroboskop“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_FT232BL_BQ.pdf
replaced with the new PWREN# signal which can be used to directly drive a transistor or P-Channel MOSFET in applications where power switching of external circuitry is required. A new EEPROM based option makes the device pull gently down its UART interface lines when the power is shut off (PWREN# is High
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PDF
tps62200.pdf
input bias current EN = GND or VIN 0.01 0.1 µA (EN) POWER SWITCH VIN= VGS = 3.6 V 530 690 P-channel MOSFET on-resistance mΩ VIN= VGS = 2.5 V 670 850 ds(ON) V = V = 3.6 V 430 540 N-channel MOSFET on-resistance IN GS mΩ VIN= VGS = 2.5 V 530 660 lkg_(P) P-channel leakage current VDS = 6.0 V 0.1 1 µA lkg_(N
in „Schaltregler für 1,2 V (oder 1,5 V ?) aus Li-Ion-Akku“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
320x240_Grafik.pdf
zeichnet ein 8x8 Pixel großes Bild mit den Daten 1, 2, 4, 8, 16, 32, 64, 128 (=schräge Linie) Der OptoMOSFET K1 kann bei LCDs die über einen ONOFF oder DispOFF\ Pin verfügen entfallen. Falls der OptoMOSFET nicht erhältich ist, kann dieser durch einen normalen Optokoppler ersetzt werden, wenn dieser genügend
in „Grafikfähiger LCD Controller für 320x240 LCD mit 4 Graustufen“ · Projekte & Code ·
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PDF
P-FET.pdf
ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS30V; R DS(ON)0.15 ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast
in „Review: Spannungsversorgung 3V->5V + Ein/Ausschalter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
flyback.pdf
in Fig. 1. Figure 1(a) depicts the basic buck-boost converter, with the switch realized using a MOSFET and diode. In Fig. 1(b), the inductor winding is constructed using two wires, with a 1:1 turns ratio. The basic function of the inductor is unchanged, and the parallel windings are equivalent to a
in „VIPer17L Eval“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
chl8316.pdf
deploys a number of efficiency shaping features. The CHL8316 can be configured to optimize capacitors MOSFET gate drive versus load current, PSI can be Enables Thermal Phase Balancing programmed to be up to four phases for optimum light-load SMBus Fault Indicators: OVP, UVP, OCP, OTP efficiency, and the controller
in „Schaltregler Modifikationen gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf4905.pdf
IRF540 N-CHANNEL 100V - 0.055 - 22A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS R DS(on) ID IRF540 100 V <0.077 22 A ■ TYPICAL R DS (on) = 0.055 ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ LOW GATE CHARGE 3 ■ APPLICATION ORIENTED 2 CHARACTERIZATION 1 TO-220 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced
in „Schaltungsfrage zu OpAmp und Stromsenke“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
XL6009_1_1.pdf
adjustable version converter. The XL6009 built in N-channel n Fixed 400KHz Switching Frequency power MOSFET and fixed frequency n Maximum 4A Switching Current oscillator, current-mode architecture results in n SW PIN Built in Over Voltage Protection stable operation over a wide range of supply n Excellent
in „Step-Up Wandler arbeitet nicht mit Schmitt-Trigger“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF830.pdf
∪ IRF830 N - CHANNEL 500V - 1.35 - 4.5A - TO-220 PowerMESH∧ MOSFET TYPE V DSS RDS(on) ID IRF830 500 V < 1.5 4.5 A TYPICAL R DS(on)= 1.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERYLOW INTRINSIC CAPACITANCES GATECHARGE MINIMIZED DESCRIPTION 3 2 This power MOSFET is designed using the 1 company’sconsolidatedstrip layout-basedMESH OVERLAY∧ process. This technology matches TO-220 and improves the performances compared with standardparts from various sources.
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW03D_________IC_.pdf
LTD. DW03D (文件编号：S&CIC0953) 二合一锂电池保护 IC 一、 概述 DW03D产品是单节锂离子/锂聚合物可充电电池组保护的高集成度解决方案。DW03D包括了先进的功率 MOSFET，高精度的电压检测电路和延时电路。 DW03D具有非常小的TSS08-8的封装,这使得该器件非常适合应用于空间限制得非常小的可充电电池组应用。 DW03D具有过充，过放，过流，短路等所有的电池所需保护功能，并且工作时功耗非常低。 该芯片不仅仅是为手机而设计，也适用于一切需要锂离子或锂聚合物可充电电池长时间供电的各种信息产品的 应用场合。 二、 特点 内部集成等效 45mΩ-60mΩ 的先进的功率 延时时间内部设定； MOSFET； 高精度电压检测； 3 段过流保护：过放电流 1、过放电流 2（可 低静态耗电流：正常工作电流 3.8uA 选）、负载短路电流； 兼容 ROHS 和无铅标准。 充电器检测功能； 采用 TSSOP-8 封装形式塑封。 三、 应用 单芯锂离子电池组； 锂聚合物电池组。 四、 订货信息 过充检测电压 过充解除电压 过放检测电压 过放解除电压 过流检测电流 型号 封装
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PDF
OCP8153_1024241_182644710.pdf
OCP8153 0755-83237951 www.hailihuidz.com 高精度原边反馈恒流转换器 z 概述 z 特征 OCP8153 是一款集成了 650V MOSFET 高精度离 z 集成 650V 功率 MOSFET 线式 LED 恒流驱动芯片，可应用于输出功率 7W 以内的 z 采用原边反馈技术，无需次级反馈电路 LED 恒流驱动电源，支持全电压输入 AC85V~265V。 z 无需环路补偿 芯片支持封装形式：DIP-8L，利用原边反馈技术， z ±3%的恒流精度 无需 TL431、光耦和反馈电路便能实现很好的线电压调 z 支持 AC85V~265V 全电压范围输入
in „1W Power LEDs - 350mA KSQ immer gut ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P2V_ESC_P1-2.pdf
(stator) andoneisOFFatanygiveninstant. MOTOR Fixed magnets S N S 30° (2312 or sim.) (rotor) The MOSFETs sourcede N A N turn the selected C A B C windings ON and S C + B S ON B +A - + A - OFF. They convert the A C Common N - N 3v MPU drive signals + –+ B OFF point B C into the battery 11v – S C A B S
in „lächerliche Frage : was ist "kv" ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
XL6009.pdf
adjustable version converter. The XL6009 built in N-channel n Fixed 400KHz Switching Frequency power MOSFET and fixed frequency n Maximum 4A Switching Current oscillator, current-mode architecture results in n SW PIN Built in Over Voltage Protection stable operation over a wide range of supply n Excellent
in „6-9V auf 12V booster“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
38371-DA300.pdf
durchdenRDS-on-WiderstandderPower- 24erhältdasVerstärkermoduldiezurFunk- genauftreten,hatdieSchutzschaltung(Ab- MOSFET-Transistoren auf. Die von uns tion erforderlichen unterschiedlichen Be- bildung 5) die Aufgabe, die Lautsprecher eingesetzten MOSFETs zeichnen sich triebsspannungen. sofort vom Verstärkerausgang zu
in „100W-Verstärker“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_FT232R_v104.pdf
High Current Designs- The PWREN# signal can be used to directly drive a transistor or P-Channel MOSFET in applications where power switching of external circuitry is required. An option in the internal EEPROM makes the device gently pull down on its UART interface lines when the power is shut off (PWREN
in „Mosfet für FT232R“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FT_232RL.pdf
High Current Designs- The PWREN# signal can be used to directly drive a transistor or P-Channel MOSFET in applications where power switching of external circuitry is required. An option in the internal EEPROM makes the device gently pull down on its UART interface lines when the power is shut off (PWREN
in „ATMega8L an USB per max232“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FT232R.pdf
High Current Designs- The PWREN# signal can be used to directly drive a transistor or P-Channel MOSFET in applications where power switching of external circuitry is required. An option in the internal EEPROM makes the device gently pull down on its UART interface lines when the power is shut off (PWREN
in „Daten für Drucker abfangen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_FT232R_v104.pdf
High Current Designs- The PWREN# signal can be used to directly drive a transistor or P-Channel MOSFET in applications where power switching of external circuitry is required. An option in the internal EEPROM makes the device gently pull down on its UART interface lines when the power is shut off (PWREN
in „FT232R Frage Bezug auf Masse“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_FT232R_v102.pdf
High Current Designs- The PWREN# signal can be used to directly drive a transistor or P-Channel MOSFET in applications where power switching of external circuitry is required. An option in the internal EEPROM makes the device gently pull down on its UART interface lines when the power is shut off (PWREN
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PDF
FT232RL.pdf
High Current Designs- The PWREN# signal can be used to directly drive a transistor or P-Channel MOSFET in applications where power switching of external circuitry is required. An option in the internal EEPROM makes the device gently pull down on its UART interface lines when the power is shut off (PWREN
in „RS232 (Bus) Pegel Probleme“ · Mikrocontroller und Digitale Elektronik ·
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PDF
JW5015B.pdf
78%) at light load continuous output current with two integrated ● Internal Soft-Start N-Channel MOSFETs. The internal synchronous ● Fixed 100kHz Switching frequency power switches provide high efficiency without ● Input under voltage lockout the use of an external Schottky diode. At light ● Low EMI
in „Bezugsquelle für JW5015B ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AP3429_A-766309.pdf
only 90μA of no-load quiescent current. Ultra-low R DS(ON) integrated Input Voltage: 2.7V to 5.5V MOSFETs and 100% duty cycle operation make the AP3429/A an Shutdown Current: <1μA ideal choice for high output voltage, high current applications which require a low dropout threshold. 100% Duty Cycle
in „Trafo-Treiber für DC/DC-Wandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
PD -97140 IRFP4668PbF HEXFET Power MOSFET Applications D V 200V l High Efficiency Synchronous Rectification in SMPS DSS l Uninterruptible Power Supply R DS(on) typ. 8.0m: l High Speed Power Switching l Hard Switched and High Frequency Circuits
in „Ersatz Mosfet für 6kw Wechselrichter "Reliable/WZRELB"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AP3019A-318144-1.pdf
the effective voltage. For example, the FB pin is connected to the feedback voltage. GND through a MOSFET and a resistor. And this MOSFET is controlled a logic signal. The luminous First, adding a constant DC voltage through a resistor intensity of LEDs will be changed when the divider to FB pin can control the dimming. Changing MOSFET turns on or off. the DC voltage or resistor between the FB Pin and the DC voltage can get appropriate luminous intensity. Comparing with all kinds of PWM signal control, this method features a stable
in „StepUp Regler mit wenig Aussenbeschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_IRFB7430.pdf
PD-97782A StrongIRFET IRFB7430PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D V 40V l Battery powered circuits DSS R typ. 1.0m l Half-bridge and full-bridge topologies DS(on) l Synchronous rectifier applications max. 1.3m G l Resonant mode
in „MOSFET Steuer vs Hauptkreis“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
EUP3482.pdf
voltage. current limit. Also, make sure that the peak inductor The converter uses internal N-Channel MOSFET current is below the maximum switch current limit. switches to step-down the input voltage to the regulated The inductance value can be calculated by: output voltage. Since the high side MOSFET requires
in „Sony Soundbar HT-CT260H nicht mehr einschaltbar - EUP3482A defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sqjq160e.pdf
SQJQ160E www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES ® PowerPAK 8 x 8L • TrenchFET Gen IV power MOSFET • AEC-Q101 qualified • 100 % R gnd UIS tested D • Thin 1.6 mm height • Material categorization: G S S 1 for definitions of compliance please
in „Hilfe mit MOSFET Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TMC2209_datasheet_rev1.07.pdf
to a further increase of driver temperature. An increase of temperature by about 100°C increases MOSFET resistance by roughly 50%. This is a typical behavior of MOSFET switches. Therefore, under high duty cycle, high load conditions, thermal characteristics have to be carefully taken into account, especially
in „Industrielle [3D-Drucker] Bastelgrundlagen“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
311_Schaltungen.pdf
umkippen. Die beiden Analogschalter der USB-Sig- DiebeiEndgerätennichtunüblicheStrom- nale und der MOSFET leiten. Das USB- aufnahme von bis zu 500 mA stellen den GerätwirdvomHosterkannt.UmdasGe- 72 Personal Download for Hans-Jürgen Heidenreich | copyright Elektor ausgewählten p-Kanal-MOSFET des Weblinks
in „[S] Sammlung von elektr. Schaltungen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BS170_2N7000.pdf
2N7000KL/BS170KL New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected: 2000 V V DS (V) rDS(on) (W) V GS(th)(V) D (A) 2 @ V = 10 V 0.47 APPLICATIONS 60 GS 1.0 to 2.5 4 @ VGS = 4.5 V 0.33 D Direct Logic-Level
in „(Mosfet-) Alternative zu ULN2003“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Lauritzen_Saber.txt
****************** template igbt3 a g k = model electrical a,g,k struc { number kp = 150, # 150 #MOSFET Transconductance Coefficient (A) VT = 6.22, # 6.22 #Threshold Voltage (V). Default 5 b = 1.9, # 1.9 #mobility reduction fitting parameter(nu). default 2 kv = 1.65, # 1.65 #Turn-on Voltage fitting parameter
in „LTSpice - grammatical error bei .FUNC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Support-Schematic.PDF
Overvoltage, polarity and short protection Power Extra IO PowerNet PowerNet PowerNet PowerNet MOSFET-P MOSFET-P 5V i F11 i Q22 i Q11 i 5V PIF101 PIF102 PIQ201 PIQ203 PIQ103 PIQ101 P+ C1C1 P0 I0 RUEF300 3A 6A I1 I2 220u C2C2 C33 OR OR GND P0 P0 100n I0 1n R7 R8 Q0 02 i GND 120K 1K I3 PowerNet I2 I1
in „Projekt: Schachcomputer mit OLED-Display, Gehäuse aus Holz (open source)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ADP-OLED-CMEL-V3-Stueckliste.pdf
1X25 0,00 0,00 36 1 JP2 EXT2 1X25 0,00 0,00 37 1 T1 IRF7555PbF SOP65P490X111-8N IRF7555TRPBFCT-ND MOSFET P-CH DUAL 20V 4.3A MICRO8 0,43 0,51 38 1 IC6 LTC1871 SOP50P489X110-10N LTC1871EMS#PBF-ND IC CONTRLR CURRENT MODE 10-MSOP 4,45 5,30 39 1 IC7 LTC3704 SOP50P489X110-10N LTC3704EMS#PBF-ND IC DC/DC CONTRLR
in „Display Stromversorgung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
steuerung.pdf
Überspannung, Unterspannung, Versorgungsspannungsaufall OK1 Q3 - 1.Version mit Lüsterklemmenanschluß, TO220-Mosfets und 2-lagig mit fliegender Gate-Verdrahtung 5VPRI 160V 1 4 BSS123 2.Version mit Federkraftklemmenanschluß, oberseitengekühlten Mosfets und Platine mit dicker Kupferauflage D14R18 GND 2 3 5VSTAB 50k
in „DIY 10kW/20kWh eta=99% Insel ESS Projektvorstellung“ · Haus & Smart Home ·
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PDF
Btest2.pdf
I U 1 0GND IN- PIU107 GND 4COR P0COR R4 R5 INA219AIDR 10k 10k 41 P01 GND GND GND GND HEATSINKN 1 Mosfet Junction to Case : 0.44°C/W U2ACB Mosfet Case to Sink 0.24°C/W CURR_CTLR 0...2.23V 3 I2 PA-T2X-38E Total: 8.14°C/W B POCURR_CTLRTLR PIU203 + 1 R6 1 Q1Q B 2 PIU201 PIR601PIR602 PIQ101 IRLP3034PBF Load
in „Konstanstromlast und Strommessung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
steuerung.pdf
Unterspannung, Versorgungsspannungsaufall 5VPRI D6 OK1 1 R - 1.Version mit Lüsterklemmenanschluß, TO220-Mosfets und 2-lagig mit fliegender Gate-Verdrahtung 200V 1 4 TSM850 2.Version mit Federkraftklemmenanschluß, oberseitengekühlten Mosfets und Platine mit dicker Kupferauflage D14 GND R18 2 3 5VSTAB 100k TLP293
in „DIY 10kW/20kWh eta=99% Insel ESS Projektvorstellung“ · Haus & Smart Home ·