electrolytic capacitors 085 CS SMD (Chip) Standard MECHANICAL DATA handbook, halfpage handbook, halfpage 2 max 2 max max9 2 max 2 max max9 2.7 2.7 2.7 2.7 max max max max 4.1 3.9 4.1 3.9 max max max max 7.5 10.8 9 max MGB099 - 1 12.2 max MGB100 - 1 a. b. Dimensions in mm. a. Case size 8.8 × 3.7 × 3.9 mm.
, so: L = L/4 = 10.6/4 = 2.65 H AB The number of turns required can be calculated with the following formula (3): L = A × N 2 (10) L A = -.4 × π × r (11) L Σl A in which: A L is the inductance in (nH) −1 ∑/A is the core constant
R226 R227 470pF 10x20*2 R 7 1 4 1 22 22 1KV EL817MB-DT Q202 7 IC503 C R231 D203 FQPF30N06L R235 C503 0 V 0 Q201 B 470 A2 D S 0.05 1 0 5 1 4 12V 5 5 1 N.C 72*25 D U MMBT2222A POWER-ON C F F 3 5W 2.8A R 7 R510 T501 C230 A1 1
b) R2 R2 R1 = 620 R2 = 120 Y Y N 20.5 0 R1 5 V R1 Open Idle Short u.l. A, dB R2 R1 = 1200 c) R2 R3 = 0 Y Y N 11.1 0 C R2 = 120 R1 C = 0.1 F Figure 8. External 485 Fail-Safe Circuits External Fail Safe With
amplifier such as a LM741 (the LM741 is not a rail to rail op-amp!), a rail to rail op-amp, or as shown in Figure 2, a device such as a PNP (MMBT2907A) transistor. The PNP controller circuit shown in Figure 2, senses the
to simplify the interface circuitry to just one low cost general purpose bipolar transistor such as 2N2222. When the 3.3V bus goes low, the emitter of the 2N2222 is pulled low and acts as a ‘common base’ amplifier pulling its base down to about 0.7V and its collector, also LX of 82B715, down to about
to simplify the interface circuitry to just one low cost general purpose bipolar transistor such as 2N2222. When the 3.3V bus goes low, the emitter of the 2N2222 is pulled low and acts as a ‘common base’ amplifier pulling its base down to about 0.7V and its collector, also LX of 82B715, down to about
GND V 1 1 1 U10 1 RLY1 I I I 2 2 P P P 1 1 12V+ g 3 2 _ _ _ r Q4 3A sicherung 12V_GESCHALTET M M M 2060-452/998-404 e R 2N2222AU W W W Wago 2 pin connector t T 2 F5 1 5 P P P Max 9A n C E A E L T QF1206F3A00T l S L I 4 1 e B C E R
GND V 1 1 1 U10 1 RLY1 I I I 2 2 P P P 1 1 12V+ g 3 2 _ _ _ r Q4 3A sicherung 12V_GESCHALTET M M M 2060-452/998-404 e R 2N2222AU W W W Wago 2 pin connector t T 2 F5 1 5 P P P Max 9A n C E A E L T QF1206F3A00T l S L I 4 1 e B C E R
0 0 5 M T T A Q L L L 2 3 4 7 V Q Q Q A 2 + V Q k 9 Q 2 R R 3 A Q F e F 1 r 7 C 0 C 0 u 0 5 0 ) i 1 T N F 0 C 2 O + 1 – 3 7 H M R 4 T . N + F 2 P 2 5 O 2 I – + A 4 3 L p Y T 1 e D D U 5 T H 1 r T 1 0 C L g A 1 †F
"1N2222" Bat. 8.9V OK Testen... NPN EBC=321 B=334 Uf=.72V Bat. 8.9V OK Testen... NPN EBC=321 B=334 Uf=.73V ******************************** "BC558" Bat. 8.9V OK Testen... PNP EBC=321 B=178 Uf=.77V ******
surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 2 - JUNE 2006 SEMICONDUCTORS 2 FMMT620 TYPICAL CHARACTERISTICS 10 0.7 ) ) ( 0.6 ( n n i 0.5 e 1 a r DC i 0.4 C 1s s r 100ms D 0.3 100m 10ms r e e 0.2 o 1ms o C 100µs P 0.1 C Single Pulseamb=25°C a I 10m
surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 2 - JUNE 2006 SEMICONDUCTORS 2 FMMT620 TYPICAL CHARACTERISTICS 10 0.7 ) ) ( 0.6 ( n n i 0.5 e 1 a r DC i 0.4 C 1s s r 100ms D 0.3 100m 10ms r e e 0.2 o 1ms o C 100µs P 0.1 C Single Pulseamb=25°C a I 10m
bestückt 1 20 D D D D 2 RESETSEPIISP55 6 PIISP06 GND R11 nach Bedarf zur Terminierung bestücken Header 2 CO22 G G G G C1C1 88 A 21100nSemi 0 100nSemi Header 3X2 COU3 NXX A 1: Black 2: Brown 2 3 6 7 ISP GND RXD 1 C ADM485 02
Trigger Current Fig.4 Forward Current vs. Forward vs. Ambient Temperature Voltage 10 100 ) VP= 6V A ( RL= 100 T 8 A I m o n F 80 C 60 C e t o o u 6 n 100 C 40 o r r 20 C e u 10 g 4 c t r w u o m 2 F i M 0 1 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 Ambient temperature ( C) Forward voltage VF (V) Fig.5 On-state Voltage vs. Ambient Fig.6 Holding Current vs. Temperature Ambient Temperature 3.0 1 TM = 100mA V = 6V ) V 2.6 A M m V H e t g 2.2 n l r o u 0.1 e 1.8 c a r s a n r O 1.4 F 1.0 0.01 20 40 60 80 100 20 40 60 80 100 o o Ambient temperature Ta ( C) Ambient Temperature Ta ( C) Part No. : MOC3063 SERIES
g 10.2 nC V DS=-24V,VGS=-10V, Gate-Source Charge Q gs 1.5 nC ID=-1.6A (Refer to test circuit) Gate Drain Charge Q gd 3 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j25°C, S =-1.6A, V GS=0V Reverse Recovery Time (3) trr 19.9 ns T j25°C, F =-1.6A, di/dt= 100A/µs Reverse Recovery Charge(3) Q 13 nC rr (1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%. (2) Switching characteristics are independent of operating junction temperature
=5V, D =1.8A Total Gate Charge Q g 3.2 nC VDS=30V,V GS=10V, Gate-Source Charge Q 0.67 nC I =1.8A gs D Gate-Drain Charge Q 0.82 nC gd SOURCE-DRAIN DIODE (1) Diode Forward Voltage V SD 0.85 0.95 V TJ=25°C, S =0.45A
=5V, D =1.8A Total Gate Charge Q g 3.2 nC VDS=30V,V GS=10V, Gate-Source Charge Q 0.67 nC I =1.8A gs D Gate-Drain Charge Q 0.82 nC gd SOURCE-DRAIN DIODE (1) Diode Forward Voltage V SD 0.85 0.95 V TJ=25°C, S =0.45A
LTC1153 • TPC09 Standby Supply Current Supply Current ON Input ON Threshold Voltage 50 1000 2.4 V = 0V V = 5V 45 IN 900 IN 2.2 V 40 800 E 2.0 A A A ( 35 (700 L 1.8 N 30 N600 V 1.6 R R D U 25 U500 O 1.4 C C S VS= 5V L 20 L400 R 1.2 P P VS= 12V H VS= 18V S 15 V = 18V S300 T 1.O 10 S 200 P 0.8 V
,iftheproductcannotsendtherelatedstatusimmediatly. 3-3-5-2. Examples of handshaking error H O S T S L A V E C o m m a n d C o m m a n d in c o rre c t N A K S ta tu s re q u e s t R e q u e s t in c o rre c t N A K Company Restricted SR9600 RS-232C Control Specification
OVERDRIVES- NEGATIVE TRANSITION POSITIVE TRANSITION 6 6 E 5㎷=INPUT OVERDRIVE E INPUT OVERDRIVE=100㎷ A 5 G 5 T 20㎷ +5V T O 4 L 4 V - V V U V 3 5.1K T 0 P VIN - P V 3 U 2 T 2 20㎷ O 100㎷ + V O 5㎷ +5V OUT E 1 1 G G T 0 A 0 5.1K L L - V - 0 O - 100 VIN VOUT T I OVERDRIVE V V + U V -50 U 50 TA=25℃ N P I -100
current CBO 20 nA VCB=120V 0.5 A V =120V, T =100⬚C CB amb Collector cut-off current CER 20 nA VCB=120V Rⱕ1k⍀ 0.5 A VCB=120V, amb=100⬚C Emitter cut-off current EBO 10 nA VEB=6V Collector-emitter saturation voltage V 18 30 mV I =100mA, I =5mA* CE(SAT) C B 40 55 mV C=1A, IB=100mA* 45 65 mV C =1A, B =50mA* 95 130 mV I=2A, I =50mA* C B 170 210 mV I=5A, I =200mA* C B Base-emitter saturation voltage VBE(SAT) 950 1050 mV IC=4A, B =200mA
1kΩ 2N2222 68 Ω 0.02 μF BY205-400 1k Ω TUT V =400V clamp +5V 5XBY205-400 270 Ω BY205-400 1kΩ 2N2904 Adjust pw to obtaiC I D44H11 47 Ω For C < 6 A VCC = 50 V VBE(off) For C ≥ 6 A VCC = 100 V 100 Ω Figure 1.
conv_r8: cmpi r8, 0x0A bnc r8_is_alpha addi r8, 0x30 b int2asc_done r7_is_alpha: addi r7, 0x37 b conv_r8 r8_is_alpha: addi r8, 0x37 int2asc_done: ret ;convert the digital data of the ADC ;to ASCII characters to send to UART
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