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SSM5N15FU__DP_.pdf
temperature Ta (°C) Ambient temperature Ta (°C) 3 2014-03-01 SSM5N15FU (Q1, Q2 common) ⎪Y fs⎪ – D IDR – V DS 1000 250 Common Source Common Source 500 V = 3 V VGS = 0 V DS ) e 300 Ta = 25°C m 200 Ta = 25°C c ( D a i 100 D d S) I I a m 50 n 150 G DR e ( e s ⏐ 30 u S a f c t ⏐ s 100 r 10 e w e o 5 n F a 50 3 D
in „(S)uche UPA572“ · Markt ·
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PDF
IRLIZ44N_IR.pdf
PULSE WIDTH 1 TJ= 25°C A 1 TJ= 175°C 0.1 1 10 100 A 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 e ▯D = 41A n ) t ( i 2.5 t e e T = 25°C R r J n u 100 O 2.0 C c d c TJ= 175°C u ze u
in „Toggle Schaltung mit NE555 schaltet ein, aber nicht aus“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
05_TLV272CS-13.pdf
are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. TLV271/ TLV272 1 of 17 July 2014 Document number: DS35394 Rev. 6 - 2 www.diodes.com © Diodes Incorporated TLV271/TLV272 Simplified Schematic Diagram Vdd IN - T C U Vbp D OUT IN
in „TLV272 Rail to Rail Problem DIODES“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds1620.c
/-------------------------------------------------------------------------------------------- void DS1620_warten(); void DS1620_INI(); void DS1620_Messung(); void DS1620_write(unsigned char m); unsigned char DS1620_read(void); unsigned char DS1620_get(void); void DS1620_put(unsigned char cmd); //----
in „Mal wieder DS1820“ · Mikrocontroller und Digitale Elektronik ·
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PDF
20002019c.pdf
50 r 20 C u 1,000 pF l 40 200 kHz y 15 p 30 500 kHz p u 20 p 10 2,500 pF S S 5 10 100 pF 0 0 100 1000 10000 10 100 1000 Capacitive Load (pF) Frequency (kHz) FIGURE 2-15: Supply Current vs. FIGURE 2-18: Supply Current vs. Capacitive Load. Frequency. 2006-2016 Microchip Technology Inc. DS20002019C-page
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF3205Z.pdf
0V, f = 1 MHZ ID= 66A Ciss = gs + gd, CdsSHORTED 5000 C = C V VDS = 44V rss gd e 16 VDS= 28V Coss = ds + gd g VDS= 11V F l ( 4000 V e Ciss e 12 n u i 3000 o a - a - 8 C 2000 t C G , G 4 1000 Coss V Crss 0 0 0 20 40 60 80 100 120 1 10 100 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Multi_DS18x20.ino
(Temperature); } } Serial.println(); delay(1000); } Serial.println(F("End IdentMultiDS18x20")); } // alle Sensoren einlesen und den Messwert im Array speichern // ohne ID (Sortierung nach ROM Code bzw. Suchreihenfolge) // mit ID (Sortierung nach
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PDF
2sk3115.pdf
100 1000 PW - Pulse Width - s Data Sheet D13338EJ2V0DS 3 2SK3115 DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE Pulsed 25 100 Tch= 125˚C - VGS = 10 V - 75˚C t 20 t e 8 V e 10 u u
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
XLamp7090XR-E.pdf
documen4600 Silicon Driveange without notice. Cree, Durham, NC 27703 USA Tel: +1.919.313.5300 6 CLD-DS05.011 www.cree.com/xlamp Electrical Characteristics (T = 25˚C) J 1000 900 ) 800 A m 700 ( n e 600 u 500 C r 400 a Thewma300esign r o F 200 100 0 0.0 1.0 2.0 3.0 4.0 5.0 Forward Voltage (V) 1200 Thermal
in „LiPo Zelle Impulsbelastung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18x20lib.c
j<1000){ //4. wait until conversion is finished _delay_us(1); j++; } error=ds1820_reset(used_pin); //5. Reset ds1820_wr_byte(0xCC,used_pin); //6. skip ROM ds1820_wr_byte(0xBE,used_pin); //7. Read entire scratchpad
in „undefined referece in AtmelStudio 6“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18x20lib.c
j<1000){ //4. wait until conversion is finished _delay_us(1); j++; } error=ds1820_reset(used_pin); //5. Reset ds1820_wr_byte(0xCC,used_pin); //6. skip ROM ds1820_wr_byte(0xBE,used_pin); //7. Read entire scratchpad
in „Temepratursensor DS18B20“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18x20lib.c
j<1000){ //4. wait until conversion is finished _delay_us(1); j++; } error=ds1820_reset(used_pin); //5. Reset ds1820_wr_byte(0xCC,used_pin); //6. skip ROM ds1820_wr_byte(0xBE,used_pin); //7. Read entire scratchpad
in „LCD Anzeige und DS18B20“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3205.pdf
25 C TJ= 175 C 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 c ID= 107A ) T = 25 C a ( J i n e 2.0 r R u TJ= 175
in „Hohe Ströme aus Akku Entladen ?!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf3205.pdf
25 C TJ= 175 C 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 c ID= 107A ) T = 25 C a ( J i n e 2.0 r R u TJ= 175
in „Erzeugt ein 9V-Printtrafo mehr als 750V?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM74.pdf
Computers −55˚C to 125˚C ±3˚C(max) S n Disk Drives n n Office Electronics s o r Simplified Block Diagram DS100909-1 MICROWIRE is a registered trademark of National Semiconductor Corporation. © 1999 National Semiconductor CorporaDS100909 www.national.com 7 M L Connection Diagram SO-8 DS100909-2 TOP VIEW NS
in „suche I2C Themperatursensor, auf 0,1°C genau“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IPB026N06N.pdf
100 125 150 175 200 T C°C] T C°C] 3 Safe operating area 4 Max. transient thermal impedance ID=f(V DS); TC=25 °C; D=0 Z thJCf(tp) parameter: t p parameter: D=t /Tp 1000 10 limited by on-state resistance 1 µs 10 µs 100 100 µs 1 0.5 1 ms ] ] DC / [ 10 [ D 10 ms C 0.2 I t Z 0.1 0.1 0.05 0.02 1 0.01 single
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF8736.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRF8736PbF 10000 V = 0V, f = 1 MHZ 5 GS D = 14.4A Ciss= Cgs+ gd, ds SHORTED ) Crss= Cgd ( VDS = 24V C = C + C g 4 V = 15V ) oss ds gd l DS p Ciss o ( e c r 3 t o c 1000 - p t a Coss t 2 , a C , S 1 Crss VG 0 100 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) ) ) DS ( ( n 100 n 100 e r 100µsec u u
in „IRF8736 - Was haltet Ihr davon?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irsf3010.pdf
ParameterDefinition Min. Typ. Max. Units Test Conditions Vds,clamp Drain to SourceClampVoltage 50 54 — V ds = 10mA — 56 62 ds = 11A, p = 700 S R ds(on) Drain to Source On Resistance — 70 80 Vin= 5V, ds= 4A — 85 — m V = 4V, I = 4A in ds — 53 — Vin= 10V, ds= 4A Idss DraintoSourceLeakageCurrent — — 10 Vds = 12V
in „PIC steuert High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl1404.pdf
25 C TJ= 175 C 10 10 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 e ID= 160A ) c ( t t i 2.0 e TJ= 25 C e u R C n )
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_DA221.pdf
latched 1s 0100 temporary latched 2s 0101 temporary latched 4s 0110 temporary latched 8s 0111 latched 1000 non-latched 15/ 34 www.miramems.com Mar. 2023 Rev 0.1 DS_da221 1001 temporary latched 1ms 1010 temporary latched 1ms 1011 temporary latched 2ms 1100 temporary latched 25ms 1101 temporary latched 50ms
in „Seltsames Verhalten eines Beschleunigungssensors“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSP149_Rev1.1.pdf
0 V - - 10 nA On-state drain current IDSS V GS=0 V, V DS=10 V 140 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, ID=70 mA - 1.7 3.5 Ω V GS=10 V, ID=660 mA - 1.0 1.8 |V |>2|I |R , Transconductance g fs DS D DS(on)max 0.4 0.8 - S ID=0.48 A 3) Threshold
in „BF246B probleme“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS1267.pdf
wiper position will only engage after a RST transition to the inactive state. On device power-up the DS1267 wiper positions will be set at 50% of the total resistance or binary value 1000 0000. 3 of 12 102199 DS1267 STACKED CONFIGURATION The potentiometers of the DS1267 can be connected in series as shown
in „Poti mit Atmega8 ersetzen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
162537-da-01-en-IRF_9540_N.pdf
Vs. Temperature IRF9540N 3000 V = 0V, f = 1MHz 20 I = -11A GS D Ciss= C gs + Cgd , Cds SHORTED ) V DS = -80V Crss= C gd ( 2500 Coss= C ds + Cgd e16 V DS = -50V g V DS = -20V F l p2000 o e C iss V c c12 n u i1500 o a - p t a C oss e 8 ,1000 a C G C rss , S4 500 VG - FOR TEST CIRCUIT SEE FIGURE 13 0 A
in „iMax B6 defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BF256_ON.pdf
, GS = 0) fgfs – 1000 – MHz 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. 2. The frequency at which gfs is 0.7 of its value at 1 KHz. 10 5 G 4.5 A 9 ) L ) 8 V = 15 Vdc A 4 –VGS = 0 V V n DS ( F 1 7 T 3.5 F = E T
in „BF256, Pinbelegung unterschiedlich“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
176001-da-01-en-ic_lm317t.pdf
1000 µF of aluminum or tantalum electrolytic are commonly used to provide improved output impedance and rejection of transients. DS009063-54 Scale 1:1 © 1997 National Semiconductor DS009063ion www.national.com
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PDF
176001-da-01-en-IC_LM317T.pdf
1000 µF of aluminum or tantalum electrolytic are commonly used to provide improved output impedance and rejection of transients. DS009063-54 Scale 1:1 © 1997 National Semiconductor DS009063ion www.national.com
in „Spannungsregler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3708PBF.pdf
20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 175°C 1 1 0.1 1 10 100 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 62A e D ) n ( t n s 2.0 e e u R C TJ= 25 C O )
in „Transistor zum Schalten von 24V/12V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF3708_IR__1_.pdf
20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 175°C 1 1 0.1 1 10 100 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 62A e D ) n ( t n s 2.0 e e u R C TJ= 25 C O )
in „Mosfet Treiberschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3708_IR__1_.pdf
20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 175°C 1 1 0.1 1 10 100 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 62A e D ) n ( t n s 2.0 e e u R C TJ= 25 C O )
in „24V-Ausgang potentialgetrennt aus einem STM32 3,3V“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM317.pdf
to 1000 µF of aluminum or tantalum electrolytic are commonly used to provide improved output impedance and rejection of transients. DS009063-54 Scale 1:1 © 1998 National Semiconductor CDS009063on www.national.com
in „Einfaches regelbares Netzteil mit LM350“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
G32trust.asm
[ecx+6], 0B00h xor eax, eax mov ax, [esi+2] dec eax cmp eax, 5 ; switch 6 cases ja short loc_1000B1E8 ; default jmp ds:off_1000B420[eax*4] ; switch jump ; ÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄ loc_1000B1E8: ; CODE XREF: sub_1000B1C0+1F j mov word ptr [ecx+6]
in „Wer kann mir eine ASM File compelieren“ · Softwareentwicklung ·
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Datei
ds18x20lib.c
j<1000){ //4. wait until conversion is finished _delay_us(1); j++; } error=ds1820_reset(used_pin); //5. Reset ds1820_wr_byte(0xCC,used_pin); //6. skip ROM ds1820_wr_byte(0xBE,used_pin); //7. Read entire scratchpad
in „DS18S20 Atmega8 zeigt immer 85°“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Software zur Datenübertragung eines Rigol Oszilloskops
Transfer Rigol — Rigol DS1000D / DS1000E Series Detected USB Devices: 0001 Refresh Close Show Help Install Driver (64 bit) Rigol Only Reset Clear Auto Run Stop Single Force Trigger Serie: Rigol DS1000D / DS1000E Series Brand:
in „Neue Open Source Software macht aus deinem Oszilloskop einen Logik Analysator“ · PC Hard- und Software · · Screenshots
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PDF
MCP1403.pdf
n 80 200 kHz n e e 80 u 60 500 kHz 1 MHz u C C 60 l 40 l 2,200 pF p p 40 S 20 S 20 100 pF 0 0 100 1000 10000 10 100 1000 10000 Capacitive Load (pF) Frequency (kHz) FIGURE 2-15: Supply Current vs. FIGURE 2-18: Supply Current vs. Capacitive Load. Frequency. © 2007 Microchip Technology Inc. DS22022B-page
in „MOSFET mit Treiber Verständnisproblem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlr2905_1_.pdf
PULSE WIDTH T J 25°C T = 175°C 1 A 1 J A 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 e ID = 41A c a A s 2.5 ( s n e e TJ= 25°C R r 100 n 2.0 u O ) C c d c TJ= 175°C u z
in „Motortreiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLU2905.pdf
PULSE WIDTH T J 25°C T = 175°C 1 A 1 J A 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 e ID = 41A c a A s 2.5 ( s n e e TJ= 25°C R r 100 n 2.0 u O ) C c d c TJ= 175°C u z
in „High Power LED Driver“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MTE011N10RFP-CystechElectonics.pdf
Junction Tempearture Capacitancevs Drain-to-SourceVoltage 1.4 10000 e t Ciss o 1.2 d ) o D=1mA ( 1000 e 1 - h c C oss d t z 0.8 c a p r C 100 o 0.6 ID=250μA ) S 0.4 Crss G V 0.2 10 0 5 10 15 20 25 30 -75 -50 -25 0 25 50 75 100 125 150 175 200 V DS, Drain-Source Voltage(V) Tj, Junction Temperature(°C
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet_ao3400.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „24v rgbww controller mosfets und ic's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1811081213_Alpha---Omega-Semicon-AO3400A_C20917.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Suche Bauteil XOXL-3E“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO3400A.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2N4416.pdf
(V) VGS − Gate-Source Voltage (V) Input Admittance Forward Admittance 100 100 TA= 25_C TA= 25_C V DS= 15 V VDS= 15 V V GS= 0 V VGS= 0 V Common Source Common Source bis 10 10 gis gfs ) ) S S ( ( −b fs 1 1 0.1 0.1 100 200 500 1000 100 200 500 1000 f − Frequency (MHz) f − Frequency (MHz) Document Number
in „OP-Amp schützen“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.c
holen memcpy_P(tempID,DS18B20IDs[0],OW_ROMCODE_SIZE); while ( tempID[0] != 0 ) { if ( DS18X20_read_meas( tempID, &subzero,&cel, &cel_frac_bits) == DS18X20_OK ) { msg.temperatur = DS18X20_temp_to_decicel(subzero, cel, cel_frac_bits) * 10; // Minuswerte: if ( subzero ) msg.temperatur *= (-1); } else { DS18X20_show_id_uart( tempID, OW_ROMCODE_SIZE ); } // nächste ID ins RAM holen memcpy_P(tempID,DS18B20IDs[++i],OW_ROMCODE_SIZE); } //------------------ Ende DS18B20 Temperatursensor ------------------ /
in „Wetterstation Windrichtung kodieren und dekodieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
A200_MCP1407-EP_MIC.pdf
pF r e u 50 u20 y 40 200 kHz C15 1,000 pF p 30 p u 20 500 kHz p10 2,500 pF S S 5 10 100 pF 0 0 100 1000 10000 10 100 1000 Capacitive Load (pF) Frequency (kHz) FIGURE 2-15: Supply Current vs. FIGURE 2-18: Supply Current vs. Capacitive Load. Frequency. © 2006 Microchip Technology Inc. DS22019A-page 7 MCP1406
in „Treiber für IRF1404 ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf3708.pdf
175°C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 D = 62A e ) n ( t t i 2.0 e e u R C J= 25 C n ) e e e 1.5 u r l o100 ° u m - J= 175 C S o - t N( 1.0 i n r a D
in „IRF3708 als Schalter“ · Mikrocontroller und Digitale Elektronik ·
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Datei
readWebsiteFromSD___Funktion.txt
jede Zeile aus //Prüfe auf Codes und ersetzte sie dann mit dem passenden Werten if(strstr(lbuffer, "~ds18b20TempIn~") != NULL) { //DS18B20 Innen if(ds18b20_tempInside != 1000) { sprintf(tempBuffer, "%.2f", ds18b20_tempInside); sprintf(lbuffer, "%s\r\n", replace_str(lbuffer, "~ds18b20TempIn~", tempBuffer)); }else{ sprintf(lbuffer, "%s\r\n", replace_str(lbuffer, "~ds18b20TempIn~", "Can't find the Temp Sensor")); } } if(strstr(lbuffer, "~ds18b20TempOut~") != NULL) { //DS18B20 Außen if(ds18b20_tempOutside != 1000) { sprintf(tempBuffer, "%.2f", ds18b20_tempOutside);
in „ATMega644 hängt sich auf und resettet sich selbst, nach lesen einer SD Karte und ENC28J60“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MPT2P50E.pdf
] however, snubbing reduces switching losses. td(off)= R G iss In (VGG GSP ) 1800 V = 0 V V = 0 V 1000 1600 DS GS TJ= 25⋅C VGS = 0 V Ciss Ciss TJ= 25⋅C 1400 F ) (1200 ( 100 C E A1000 Ciss N C C 800 I oss P A C 600 Crss A 10 C , Crss 400 C Coss 200 Crss 1 010 5 0 5 10 15 20 25 10 100 1000 V V V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS DS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capacitance Figure 7a. Capacitance Variation Variation http://onsemi.com 4 MTP2P50E )12 300 V 1000 L QT S VDD = 250 V V D
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lm317-1.pdf
Current K TO-3 1.5A H TO-39 0.5A T TO-220 1.5A E LCC 0.5A S TO-263 1.5A EMP SOT-223 1A MDT TO-252 0.5A DS009063-1 SOT-223 vs D-Pak (TO-252) Full output current not available at high input-output voPackages *Needed if device is more than 6 inches from filter capacitors. of 1 µF to 1000 µF of aluminum or tantalum
in „Konstantstromquelle“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM317__NAT.pdf
Current K TO-3 1.5A H TO-39 0.5A T TO-220 1.5A E LCC 0.5A S TO-263 1.5A EMP SOT-223 1A MDT TO-252 0.5A DS009063-1 SOT-223 vs D-Pak (TO-252) Full output current not available at high input-output voPackages *Needed if device is more than 6 inches from filter capacitors. of 1 µF to 1000 µF of aluminum or tantalum
in „Frage zu Spannungs/Stromregelschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2574.pdf
DS011394-32 Oscillator Frequency Switch Saturation Efficiency Voltage DS011394-33 DS011394-35 DS011394-34 Minimum Operating Voltage Supply Current Feedback Voltage vs Duty Cycle vs Duty Cycle DS011394-36
in „Ersatz für 7805 gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM2574.pdf
DS011394-32 Oscillator Frequency Switch Saturation Efficiency Voltage DS011394-33 DS011394-35 DS011394-34 Minimum Operating Voltage Supply Current Feedback Voltage vs Duty Cycle vs Duty Cycle DS011394-36
in „Iverting Buck Boost -5V“ · Analoge Elektronik und Schaltungstechnik ·
