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PDF
DS100728A_IXTN660N04T4_-1022876.pdf
150 n 1.0 I ( D 100 R 0.8 5V 50 0 0.6 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 -50 -25 0 25 50 75 100 125 150 175 V DS- Volts TJ- Degrees Centigrade Fig. 5. Normalized R to I = 100A DS(on) D vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 1.8 V GS = 10V 200 15V 1.6 160 e l TJ= 175ºC
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PDF
ALD110800-1489.pdf
°C I R 400 T VGS DS(ON) U O C ▯ ▯ V V +2 S E 300 E GS(TH) 0.0V ≤ V ≤ 5.0V A C +25°C DS K U E 200 IGSS O L S VGS(TH)1 E 100 T A A G G 0 VGS(TH) -50 -25 0 25 50 75 100 125 0.1 1 10 100 1000 10000 AMBIENT TEMPERATURE (°C)
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PDF
MCP3221.pdf
Parameters Sym Min Typ Max Units Conditions DC Accuracy Resolution 12 bits Integral Nonlinearity INL — ±0.75 ±2 LSB Differential Nonlinearity DNL — ±0.5 ±1 LSB No missing codes Offset Error — ±0.75 ±2 LSB Gain Error — -1 ±3 LSB Dynamic Performance Total Harmonic Distortion THD — -82 — dB V IN= 0.1V to 4.9V
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PDF
LM3490.pdf
Current vs Input Voltage vs Input Voltage DS100071-11 DS100071-12 Line Transient Response Line Transient Response DS100071-3 DS100071-4 Load Transient Response Load Transient Response DS100071-5 DS100071-6 7 www.national.com 0 9 3 Typical Performance
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PDF
33963.pdf
has OC maximum battery voltage. expired. The last (32) register contains the bits which 052694 2/11 DS1633 THEVENIN RESISTANCE FIELD indicatesa5VsystemandchargingwillbeginwhenV CC TheTheveninresistancefieldspecifiesthevalueofout- exceeds 4.75V. put resistance between the low impedance V source OC andthebatterypin
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0704-015.pdf
-25 0 25 50 75 100 125 150 T A°C) 6 115NortheastCutoff,Box15036 ACS704ELC015-DS, Rev. 2 Worcester,Massachusetts01615-0036 (508)853-5000 www.allegromicro.com ACS704ELC-015 Magnetic Offset versus Ambient Temperature
in „Stromfluss detektor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
0704-015.pdf
-25 0 25 50 75 100 125 150 T A°C) 6 115NortheastCutoff,Box15036 ACS704ELC015-DS, Rev. 2 Worcester,Massachusetts01615-0036 (508)853-5000 www.allegromicro.com ACS704ELC-015 Magnetic Offset versus Ambient Temperature
in „Gibts eigentlich auch ADCs, die Strom messen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
0704-015.pdf
-25 0 25 50 75 100 125 150 T A°C) 6 115NortheastCutoff,Box15036 ACS704ELC015-DS, Rev. 2 Worcester,Massachusetts01615-0036 (508)853-5000 www.allegromicro.com ACS704ELC-015 Magnetic Offset versus Ambient Temperature
in „Spule als Stromwandler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3205S.pdf
Temperature www.irf.com 3 IRF3205S/IRF3205L 6000 V = 0V, f = 1 MHZ 16 I = 62A GS D Ciss= Cgs + Cgd, ds SHORTED V 14 V DS= 44V 5000 Crss = Cgd ( V DS= 27V C = C + C g V DS= 11V ) oss ds gd l 12 F4000 o e Ciss V 10 n r i u c3000 S 8 p o C - 6 ,2000 Coss a C G , 4 1000 G Crss V 2 0 0 1 10 100 0 20 40 60
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PDF
PAN1555__ENW89815A__Datasheet.pdf
20 dB bandwidth for modulated carrier 920 924 1000 ≤1000 kHz Initial carrier frequency tolerance -75 -10 75 ≤ ±75 kHz Carrier frequency drift (packet DH1) -25 11 25 ≤ ±25 kHz Drift Rate -20 0 20 20 kHz/ 50µs Δf1avgMaximum Modulation” 140 166 175 ≥140 to kHz ≤175 Δf2 “Minimum Modulation” 115 155 - ≥
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PDF
SI4946BEY.pdf
A 0.041 0.052 a g V = 15 V, I = 5.3 A 24 S Forward Transconductance fs DS D Dynamic b Input Capacitance C iss 840 C V = 30 V, V = 0 V, f = 1 MHz Output Capacitance oss DS GS 71 pF Reverse Transfer Capacitance C rss 44 V DS = 30 V, GS = 10 V,DI = 5.3 A 17 25 Total Gate Charge
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PDF
ZXBM5210.pdf
3V O i t0.5 3V w0.2 i0.4 S S d 12V 18V e0.3 S0.1 i0.2 12V w S0.1 18V o o L0.0 L0.0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Low Side Switch On Voltage V vs. Temperature Low Side Switch On Voltage V vs. Temperature OL OL High Side Switch On Voltage (V DD
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PDF
NDM3000.pdf
4.5 V, ID= 1.0 A 0.09 0.13 ID(on) On-State Drain Current VGS -10 V, V DS-5 V Q1, Q3, Q5 -10 A VGS 10 V, V DS5 V Q2, Q4, Q6 10 DYNAMIC CHARACTERISTICS C iss InputCapacitance Q1, Q3, Q5 Q1, Q3, Q5 375 pF V = -10 V, V = 0 V, DS GS Q2, Q4, Q6 360 f = 1.0 MHz C oss Output Capacitance
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PDF
rt9198__rt9198a_richtek_DT_93R.pdf
C OUT = 1uF ) )1.9 u90 ( t e e85 a r l1.8 u80 V t t No Load e t c75 u i O1.7 u70 Q 65 1.6 60 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) EN Pin Shutdown Threshold vs. Temperature Current Limit vs. Input Voltage 1.5 RT9198/A
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PDF
rt9198__rt9198a_richtek_VR.pdf
C OUT = 1uF ) )1.9 u90 ( t e e85 a r l1.8 u80 V t t No Load e t c75 u i O1.7 u70 Q 65 1.6 60 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) EN Pin Shutdown Threshold vs. Temperature Current Limit vs. Input Voltage 1.5 RT9198/A
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PDF
_APT30M40JVFR_A-601394.pdf
= ±30V, DS = 0V) ±100 nA VGS(th) Gate Threshold Voltage DS = VGS, D = 2.5mA) 2 4 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be FollowAd. APTWebsite
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PDF
1-SPP30N03L.pdf
BR)DSS 30 - - V V = 0 V, I = 0.25 mA, T = 25 °C GS D j Gate threshold voltage, V = V V 1.2 1.6 2 GS DS GS(th) ID= 50 µA Zero gate voltage drain current IDSS µA V = 30 V, V = 0 V, T = 25 °C DS GS j V DS = 30 V, GS = 0 V, j = 150 °C - - 100 Gate-source leakage current IGSS - 10 100 nA V = 20 V, V = 0 V
in „logic level MOSFET - falsche Gate threshold voltage?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlr3717.pdf
49 ––– ––– S V = 10V, I = 12A DS D Q g Total Gate Charge ––– 21 31 Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.4 ––– V DS= 10V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC V = 4.5V GS Qgd Gate-to-Drain Charge ––– 7.2 ––– ID= 12A
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Transistoren_cht.pdf
- 11 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part V DSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement BUZ41A 500 1.5 4.5 75 TO-220AB 2SK2661 A Siemens BUZ42 500 2 4 75 TO-220AB 2SK2661 A Siemens BUZ50A 1000 5 2.5 75 TO-220AB 2SK1119
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PDF
Power_MOSET_Cross_reference.pdf
- 11 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part V DSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement BUZ41A 500 1.5 4.5 75 TO-220AB 2SK2661 A Siemens BUZ42 500 2 4 75 TO-220AB 2SK2661 A Siemens BUZ50A 1000 5 2.5 75 TO-220AB 2SK1119
in „Schaltregler Fragen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BTS_100_High_Side.pdf
0, D = — 0.25 mA — 50 — — Gate threshold voltage V GS(th) V = V , I = — 1 mA — 2.5 — 3.0 — 3.5 GS DS D Zero gate voltage drain current I DSS A V = 0 V,V = — 50 V GS DS Tj= 25 °C — — 1 — 10 Tj= 150 °C — — 100 — 300 Gate-source leakage current I GSS VGS = — 20 V,V DS= 0 Tj= 25 °C — — 10 — 100 nA Tj= 150
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PDF
bts100.pdf
0, D = — 0.25 mA — 50 — — Gate threshold voltage V GS(th) V = V , I = — 1 mA — 2.5 — 3.0 — 3.5 GS DS D Zero gate voltage drain current I DSS A V = 0 V,V = — 50 V GS DS Tj= 25 °C — — 1 — 10 Tj= 150 °C — — 100 — 300 Gate-source leakage current I GSS VGS = — 20 V,V DS= 0 Tj= 25 °C — — 10 — 100 nA Tj= 150
in „BTS 100 Ersastzlösung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NDS356AP.pdf
V = 0 V, I = -250 µA -30 V DSS GS D I ZeroGateVoltage DrainCurrent V = -24 V, V = 0 V -1 µA DSS DS GS T =55°C -10 µA J IGSSF Gate-BodyLeakage,Forward VGS 20 V, V DS0 V 100 nA Gate-BodyLeakage,Reverse -100 nA IGSSR VGS -20V, V DS0 V ON CHARACTERISTICS (Note2) VGS(th) GateThresholdVoltage VDS V ,GS
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PDF
si1539cd.pdf
Voltage 10 1.8 ID= 0.6 A VGS = 10 V ) D = 0.6 A ( 8 VDS= 7.5 V g e 1.5 t c o t V 6 i d c e ei u V DS= 15 V - a S n r 1.2 o - o - 4 V = 24 V n ( t DS S G RD - 0.9 G 2 V VGS= 4.5 V 0 0.6 0 0.3 0.6 0.9 1.2 - 50 - 25 0 25 50 75 100 125 150 T - Junction Temperature (°C) Qg- Total Gate Charge (nC) J On-Resistance
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PDF
FS14KM-9.PDF
in mm 10 ± 0.3 2.8 ± 0.2 3 . 0 ± 3 ± . 0 3 6 ± φ 3.2 ± 0.2 1 . . ± 0 . 1.1 ± 0.2 4 3 1.1 ± 0.2 1 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 . ± 1 2 3 . . 4 0 w 6 2 q GATE w DRAIN q `V DSS ......................................................450V...................... e SOURCE `r DS (ON) (MAX) .
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PDF
SUM55P06-19L.pdf
DS = - 60 V,GS = 0 V, J = 125 °C - 50 µA V = - 60 V, V = 0 V, T = 175 °C DS GS J - 250 On-State Drain Current I V =- 5 V, V = - 10 V - 120 A D(on) DS GS VGS = - 10 V,DI = - 30 A 0.015 0.019 V GS= - 10
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2080ke.pdf
nA GSS GS DS V V = V , I = 4.4mA Gate threshold voltage GS (th) DS GS D 1.6 - 4.0 V VGS= 18V, ID= 10A Static drain - source *3 R DS(on) Tj= 25°C - 80 117 m on - state resistance Tj= 125°C - 125 - Gate input resistance
in „Verarmungs- oder Anreicherungstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datasheet_MIC2875.pdf
910kΩ T = -40℃ F R2 = 910kΩ R3 = 200kΩ A R3 = 200kΩ 4.80 2.5 3.0 3.5 4.0 4.5 5.0 0.896 -50 -25 0 25 50 75 100 125 150 INPUT VOLTAGE(V) TEMPERATURE (℃ ) FIGURE 2-3: Output Voltage vs. Input FIGURE 2-6: Feedback Voltage vs. Voltage. Temperature. 2015 Microchip Technology Inc. DS20005549A-page 7 MIC2875 2.40
in „MI2875 PG-PIN“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
netzuhr_.asm
.byte 1 DS71: .byte 1 DS72: .byte 1 DS73: .byte 1 DS74: .byte 1 DS75: .byte 1 DS76: .byte 1 DS77: .byte 1 DS78: .byte 1 DS79: .byte 1 ; last lds/sts data byte at 0x0079 ;---------------------------------------
in „Reparaturtips für VFD von alter Elektronika-Leuchte“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PMV48XPA.pdf
copper, tin-plated and standard footprint. 120 017aaa123 120 017aaa124 P der der (%) (%) 80 80 40 40 0- 75 - 25 25 75 125 175 0- 75 - 25 25 75 125 175 Tj(°C) Tj(°C) Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a function of junction temperature function of
in „Bauteil gesucht: Markierung: WDZ - SOT23-3“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
3703fc.pdf
1.4 P 0.2 0.5 1.2 1.0 0 0 –50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150 5 6 7 8 9 10 11 12 13 14 15 TEMPERATURE (°C) TEMPERATURE (°C) DRV CCOOST VOLTAGE (V) 3703 G10 3703 G11 3703 G12 Driver Pull-Down R DS(ON) vs Rise/Fall Time
in „Längs- oder Querregler 40V 250W als Überspannungsschutz für Tiefstellsetzer“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfh5300pbf.pdf
IRFH5300PbF ® HEXFET Power MOSFET V 30 V DS R DS(on) max 1.4 m: (@V GS= 10V) Q g (typical) 50 nC R G (typical) 1.3 : ID (@T = 25°C) 100 h A PQFN 5X6 mm c(Bottom) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPB026N06N.pdf
V ≥10 V tot C D C GS 160 120 140 100 120 80 100 ] W ] t 80 [ 60 t ID P 60 40 40 20 20 0 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 T C°C] T C°C] 3 Safe operating area 4 Max. transient thermal impedance ID=f(V DS); TC=25 °C; D=0 Z thJCf(tp) parameter: t p parameter: D=t /Tp 1000
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2Gb_1_35V_DDR3L.pdf
(AC135) DQS# VREF @ 1 V/ns 275 – 225 – 180 – 160 – N/A – ps Data hold Base tDH 160 – 110 – 75 – 55 – N/A – ps time from (specification) (DC90) DQS, DQS# VREF @ 1 V/ns 250 – 200 – 165 – 145 – N/A – ps t Data setup Base DS N/A – N/A – N/A – N/A – 70 – ps time to DQS, (specification) (AC130) DQS
in „DDR3 Datenblatt richtig lesen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STP3NB90FP.pdf
th) Gate Threshold V DS= VGS D = 250 A 3 4 5 V Voltage R DS(on) Static Drain-source On V GS= 10V ID= 1.7 A 4 4.2 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)max 3.5 A V GS= 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max D = 1.7 A 1.6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz VGS = 0 700 pF Coss Output Capacitance 90 pF C Reverse Transfer 7 pF rss Capacitance 2/6 STP3NB90/FP ELECTRICAL
in „unbek. TO220 Bauteil in einem Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LT3800.pdf
×2 X7R ×3 V BOOST IN C1 1μF D1 RA 16V X7R BAS19 M1 1M NC TG Si7850DP LT3800 ×2 C7 SHDN SW 1.5nF R4 75k CSS NC L1 R1 R2 5.6μH 100k 309k BURST_EN VCC 1% 1% C3 1μF M2 DS3 V BG 16V X7R Si7370DP FB B160 ×2 ×2 VC PGND R3 62k C10 R5 SENSE– SENSE+ C9 100pF 47k SGND 470pF RS 0.01Ω D2 1N4148 VOUT DS1 C6 + 5V AT
in „LT3800 Frage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_K4B8G1646Q-MY_Rev10.pdf
Table 59 ] Data Setup and Hold Base-Values [ps] DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 reference tDS(base) AC175 75 25 - - V (AC) IH/L DDR3 tDS(base) AC150 125 75 30 10 VIH/LAC) tDH(base) DC100 150 100 65 45 VIH/LDC) tDS(base) AC160 90 40 - - V (AC) IH/L DDR3L tDS(base) AC135 140 90 45 25 VIH/LAC) tDH
in „Orange Pi - 15$ Quadcore SBC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APM2601.pdf
Symbol Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BV DSS V GSV , I DS250µA -20 V Voltage Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.45 -1.2 V I Gate Leakage Current V =±8V , V =0V ±100 nA GSS GS DS Drain-Source On-state V GS4.5V , IDS-3A 80 100 RDS(ON) mΩ Resistance V GS-2.5V , DS=-2A 110 135 V SD Diode Forward Voltage ISD-1.25A , VGS0V -0.7 -1.3 V b Dynamic Q Total Gate Charge V =-10V , I =-1A g DS DS 6.4 8 Qgs Gate-Source Charge V GS=-4.5V 1 nC Qgd Gate-Drain Charge 1.8 t Turn-on
in „SMD-Bauteilbestimmung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
K4B4G1646Q-Samsung.pdf
Table 59 ] Data Setup and Hold Base-Values [ps] DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 reference tDS(base) AC175 75 25 - - V (AC) IH/L DDR3 tDS(base) AC150 125 75 30 10 VIH/LAC) tDH(base) DC100 150 100 65 45 VIH/LDC) tDS(base) AC160 90 40 - - V (AC) IH/L DDR3L tDS(base) AC135 140 90 45 25 VIH/LAC) tDH
in „Orange Pi - 15$ Quadcore SBC“ · Mikrocontroller und Digitale Elektronik ·
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Datei
device2007.txt
P27, Am27C64-12.5V,P27, Am2128-21V, Am27128A-12.5V, Am27C128-12.7V,P27, Am27256HV-21V, Am27C256-12.75V, Am27C256P-12.75V, Am27H256-12.75V, Am27512-12.75V, Am27512/L-12.75V, Am27C010-12.75V, Am27H010-12.75V, Am27HB010-12.75V, Am27C020-12.75V, Am27C040-12.75V, Am27C080-12.7V, ____EPROM-ATMEL AT2716-12.7V
in „24C04 beschreiben und auslesen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP2551.pdf
essential to protect against bus line short-circuit-induced damage. © 2010 Microchip Technology Inc. DS21667F-page 3 MCP2551 TABLE 1-1: MODES OF OPERATION Mode Current at s Pin Resulting Voltage aS Pin Standby -RS< 10 µA VRS > 0.75 DD Slope-Control 10 µA < RS< 200 µA 0.4 VDD< VRS < 0.6 DD High-Speed -RS
in „MCP2551 Standby Mode wenn AVR im Power down Modus“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF1404.pdf
Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com IRF1404 220 RD V DS 200 LIMITED BY PACKAGE VGS 180 D.U.T. ) RG (160 V DD n - e140 u 10V C120 Pulse Width ≤ 1 µs n Duty Factor ≤ 0.1 % a100 D , 80 ID Fig 10a. Switching Time Test Circuit 60 VDS 40 20 90% 0 25 50 75 100 125
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sia817edj_MOSFET_SCHOTTKY.pdf
noteA) 20 1.1 1.0 15 0.9 ) ) W ( r ( 0.8 e 10 G o V ID= 250 μA P 0.7 5 0.6 0.5 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T - Temperature (°C) J Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by DS(on) ) 10 ( n e 100 µs u C 1 a D 1 ms - 10 ms ID 0.1
in „Korrekte LIPO-Ladeschaltung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AP5724_Backlightdriver.pdf
50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature ( ℃ ) Temperature ( ℃ ) Temperature vs. Feedback Voltage 120 V IN= 4.2V V110 ( e100 t V = 3.6V o IN V 90 c a 80 d e F 70 60 -50 -25 0 25 50 75 100 125 Temperature
in „Fehlersuche Backlightdriver startet nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl1404.pdf
i Duty Factor ≤ 0.1 % r , ID 40 V DS 90% 0 25 50 75 100 125 150 175 ° TC, CaseTemperature ( C) 10% V Fig 9. Maximum Drain Current Vs. GS d(on) r td(off)tf Case Temperature 1 D = 0.50 ) C h 0.20 t ( 0.1 0.10 e s 0.05 o s e 0.02 R 0.01 SINGLE
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
dp8212.pdf
noted Symbol Parameter Conditions Min Typ Max Units F Input Load Current, VF e 0.45V b0.25 mA STB, DS2, CLR, D1 –D8 Inputs F Input Load Current, MD Input VF e 0.45V b0.75 mA F Input Load Current, DS1 Input VF e 0.45V b 1.0 mA R Input Leakage Current VR e VCC Max 10 mA STB, DS2, CLR, D1 –D8 Inputs R Input
in „Suche Datenblatt NEC µPB8212“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APT10050B2VR_B.pdf
°C) DS DSS GS C 250 I Gate-Source Leakage Current (V = ±30V, V = 0V) ±100 nA GSS GS DS V GS(th) Gate Threshold Voltage (V = V , I = 2.5mA) 2 4 Volts DS GS D CAUTION: These Devices are Sensitive to Electrostatic
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2sk3142.pdf
30 A, V = 10 VNote 1 DS(on) D GS resistance — 5.5 8.5 m I = 30 A, V = 4 VNote 1 D GS Forward transfer admittance |y | 45 75 — S I = 30 A, V = 10 VNote 1 fs D DS Input capacitance Ciss — 6800 — pF V DS= 10 V Output capacitance
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
si3459bdv.pdf
Voltage 2.6 30 25 2.4 ID= 250 µA 20 ) 2.2 ) ( ( t r 15 S w G 2.0 o V P 10 1.8 5 1.6 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T - Temperature (°C) Time (s) J Threshold Voltage Single Pulse Power 10 Limited by DS(on) 100 µs ) t 1 n r 1 ms u n r 10 ms D - 0.1 I 100 ms 1 s 10 s TA= 25 °
in „SMD Bauteil identifizieren "*"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
XLamp7090XR-E.pdf
and XLamp are registered trademarks of Cree, Inc. Durham, NC 27703ive USA Tel: +1.919.313.5300 5 CLD-DS05.011 www.cree.com/xlamp Relative Flux vs. Junction Temperature (I = 350 mA) F 100% 90% u 80% F s 70% u o 60% i m 50% White u L 40% Blue e Green t 30% a e 20% R 10% 0% 25 50 75 100 125 150 Junction Temperature
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