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Spartan-3A_FPGA_Family.pdf
IO_L22P_1 IO_L22P_1/A20 D14 IO_L23N_1 IO_L23N_1/A23 E13 IO_L23P_1 IO_L23P_1/A22 C15 IO_L24N_1 IO_L24N_1/A25 C16 IO_L24P_1 IO_L24P_1/A24 DS529-4 (v2.0) August 19, 2010 www.xilinx.com 89 Pinout Descriptions Differences Between XC3S200A/XC3S400A and XC3S700A/XC3S1400A The XC3S700A and
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PDF
LHC1-22XX_Super_LEDs.pdf
Product Nominal Efficacy Test Current LES Part Number Min. Typ. CCT Min. (lm) Typ. (lm) (lm/W) (mA) (mm) 80 82 2200K 550 625 88 200 6.5 L2C1-2280120206A00 80 82 2700K 645 725 101 200 6.5 L2C1-2780120206A00 80 82 3000K 700 775 109 200 6.5 L2C1-3080120206A00 80 82 3500K 700 775 109 200 6.5 L2C1-3580120206A00 80 82 4000K 700 800 113 200 6.5 L2C1-4080120206A00 LUXEON 80 82 5000K 725 825 116 200 6.5 L2C1-5080120206A00 CoB 1202s 90 97 2200K 450 525 75 200 6.5 L2C1-2290120206A00 90 97 2700K 525 600 85 200 6.5 L2C1
in „Entladeformel einer Spule“ · Analoge Elektronik und Schaltungstechnik ·
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MTE011N10RFP-CystechElectonics.pdf
BV DSS 100 - - V V GSV, I =D50μA ∆BV DSS/∆Tj - 74 - mV/C Reference to 25C, ID=250μA V GS(th) 2.0 - 4.0 V V DS = V GSI D250μA *G FS - 14.5 - S V DS =10V, ID=10A IGSS - - ±100 nA V GS20V IDSS - - 1 μA V DS =80V, V GS =0V - - 5 V DS =80V, V GS =0V, Tj=55C *
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Datei
DS10-g0120-PID.c
include <MSP430x16x.h> // für MSP430F1611 #include <signal.h> //wird für interrupt gebraucht #include "DS10-gP12-SD_MAINTI.c" #include "DS10-g0107-LMK62-SD.h" #include "DS10-gP11-DS32C35.h" #include "DS10-g0073-DS18B20-NR1bis18-LP63-11.h" #include "DS10-g0110-SD_Karte.h" //für Karte Nr19 PLATINUM: = 528
in „while-Schleife vorzeitig verlassen“ · Mikrocontroller und Digitale Elektronik ·
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DS1775R.pdf
and under–temperature (T HYST ) setpoints for thermostatic operation. The power–up state of T OS is 80°C and that for THYSTis 75°C. The result of each temperature conversion is compared with the T and T setpoints. The DS1775 offers two modes for OS HYST temperature control, the comparator mode and the
in „AkkuPack mit 12 Volt 2100mAh wie laden ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLR6225PBF_NMOS.pdf
50µA ∆VGS(th) Gate Threshold Voltage Coefficient ––– -4.0 ––– mV/°C DS GS D DSS Drain-to-Source Leakage Current ––– ––– 1.0 µA V DS= 16V, VGS= 0V ––– ––– 150 V DS= 16V, VGS= 0V, TJ= 125°C GSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V Gate-to-Source Reverse
in „FET abgeraucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSP149_Rev1.1.pdf
on-state resistance 10 Typ. gate threshold voltage R =f(T ); I =0.07 A; V =0 V V =f(T ); V =3 V; I =400 µA DS(on) j D GS GS(th) j DS D parameter: I D 8 0 -0.5 6 -1 98 % ] [ V ) ) ( 4 98 % ( -1.5 typ D G R V -2 2 % 2 typ -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj[°C] Tj[°C] 11 Threshold voltage bands 12 Typ. capacitances ID=f(V GS); VDS=3 V; T j25 °C C=f(V DS); VGS=-3 V; f=1 MHz 10 1000 Ciss 1 N M L K J ] A 400 µA F [ [ 100 D I C Coss 0.1 Crss 0.01 10 -2 -1.5 -1 -0.5 0 5 10 15 20 25 30 V GS[V] V DS [V] Rev. 1.1 page 6 2005-01-26 BSP149 13 Forward
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PDF
Chess-Schematic.PDF
3.3V 3.3V 3.3V 3.3V 3.3V SIPO_RCKK Pal2111 12 Ial02 PISO_PL PISIPO1SEROUT DRAIN4 PISIPO1011 IL2 1K1 IE80 IE80 GND B INKK Pal2313 14 Ial04 TPIC6C596 S0 21 31 01 01 P01 P1 I1 Pal2515 16 Ial06 S11 RS11 S22 RS22 S33 RS33 S44 RS4 CS55 RS5 CS66 RS6 CS7 RS77 CS8 RS88 Pal2717 18 Ial08 SIPO2 PISO1 10K 10K 10K 10K
in „Projekt: Schachcomputer mit OLED-Display, Gehäuse aus Holz (open source)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
162537-da-01-en-IRF_9540_N.pdf
Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID = -19A c ) n ( T = 25°C s t J s 2.0 n e r T = 175°C R u 10 J n C O e c d 1.5 r r e u o l o - a - t r t n o 1.0
in „iMax B6 defekt“ · Analoge Elektronik und Schaltungstechnik ·
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IRFP450B-1.pdf
Temperature I = 250 µA, Referenced to 25°C / ∆T Coefficient D -- 0.55 -- V/°C J DSS V DS = 500 V, GS = 0 V -- -- 10 µA Zero Gate Voltage Drain Current V DS = 400 V, C = 125°C -- -- 100 µA GSSF Gate-Body Leakage Current, Forward V GS = 30 V, DS
in „Suche IRFP 450B“ · Markt ·
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PDF
DS3930.pdf
CC 9 D 5 LO = GND D D 200 VCC= 5V A A 620 ( 4 ( V CC= 5V N V T 560 E 180 E E R A R 500 C VCC= 3V L 3 C L 160 V L 440 P P V = 3V S 2 U 380 CC S 140 320 1 260 120 0 200 -40 -20 0 20 40 60 80 100 0 50 100 150 200 250 300 0 100 200 300 400 TEMPERATURE (°C) SETTING (DEC) SCL FREQUENCY (kHz) WIPER
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AP9101C.pdf
Dim Min Max Typ A 0.35 0.50 0.38 B C B 1.50 1.70 1.60 C 2.70 3.00 2.80 D - - 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 H K 1.00 1.30 1.10 K L 0.35 0.55 0.40 N M M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° - J D L All Dimensions in mm (2) Package
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
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24LC256_32k_I2C-EEPROM.pdf
VSSor VCC, WP = VSS VIN= VSSor VCC, WP = VCC D7 ILO Output leakage current — ±1 µA VOUT = SS or CC D8 C I, Pin capacitance — 10 pF VCC = 5.0V (Note) C OUT (all inputs/outputs) TA= 25°C, C= 1 MHz D9 ICCRead Operating current — 400 µA VCC = 5.5V, SCL = 400 kHz ICCWrite — 3 mA VCC = 5.5V D10 ICCS Standby
in „immer noch EEprom“ · Mikrocontroller und Digitale Elektronik ·
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irfh5300pbf.pdf
Characteristics Fig 2. Typical Output Characteristics 1000 2.0 e n I = 50A ) t D t 100 s VGS = 10V n e r TJ= 150°C R u O 1.5 C 10 e ) r r e u o zl S T = 25°C - a t 1 J t r n i N a r (1.0 D D , 0.1 ) ID V = 15V o DS S ≤ 60μs PULSE WIDTH D 0.01 R 0.5 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
device_list_hilo_all03_v9-12.pdf
/I <<DALLAS>> DS1213B (2K*8) DS1213B (8K*8) DS1213C (32K*8) DS1213C (8K*8) DS1213D (128K*8) DS1213D (32K*8) DS1213D (512K*8) DS1213D (8K*8) DS1216B (2K*8) DS1216B/C/E (8K*8) DS1216C/D/E (32K*8) DS1216D/F (128K*8) DS1216F
in „PROM programmieren“ · Mikrocontroller und Digitale Elektronik ·
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irf740pbf.pdf
o T = 150 °C S C D 0.0 10-1 100 101 R - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 V ,Drain-to-Source Voltage (V) T ,unction Temperature (°C) 91054_02 DS 91054_04 J Fig. 2 - Typical Output Characteristics, T C 150
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfp2907.pdf
20 D = 125A VGS = 0V, f = 1 MHZ Ciss = gs+ Cgd Cds SHORTED ) VDS = 60V C = C ( V = 37V 16000 rss gd e 16 DS Coss= Cds Cgd t F o ( Ciss V c2000 c 12 a u c o p - a8000 - 8 , t C a , 4000 S 4 Coss G V Crss FOR TEST CIRCUIT 0 SEE FIGURE 13 1 10 100 0 0 100 200 300 400 500 600
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP2907.pdf
20 D = 125A VGS = 0V, f = 1 MHZ Ciss = gs+ Cgd Cds SHORTED ) VDS = 60V C = C ( V = 37V 16000 rss gd e 16 DS Coss= Cds Cgd t F o ( Ciss V c2000 c 12 a u c o p - a8000 - 8 , t C a , 4000 S 4 Coss G V Crss FOR TEST CIRCUIT 0 SEE FIGURE 13 1 10 100 0 0 100 200 300 400 500 600
in „Auto-Kühler-Lüfter per PWM manuell steuern“ · Analoge Elektronik und Schaltungstechnik ·
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2N3819.pdf
vs. Gate-Source Cutoff Voltage 20 10 500 100 g rDS@ ID =1 mA, VGS = 0 V s– ) g @ V = 10 V, V = 0 V ) IDSS F ( os DS GS g A 16 8 r e 400 f = 1 kHz 80 s ( w n – n d t O e T s t u 12 g 6 a e 300 DS 60 u C fs s - g C a o O os o D d e d n u r c t 8 4 a o
in „2N3819 Rdson Frage DB“ · Analoge Elektronik und Schaltungstechnik ·
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uC51_UEdit_T_Deck_s.pdf
Command Line Arguments = Category&02 = COMPILER OPTIONS Processor = Intel MCS51 (8051-family)|Dallas DS80C390|Dallas DS80C400|Freescale/Motorola HC08|Zilog Z80|GameBoy Z80|Atmel AVR|Microchip PIC 14- bit (p16f84-family)|Microchip PIC 16-bit (p18f452-family)|Toshiba TLCS-900H|Phillips XA51 Compiler Options
in „Wickenhäuser uC51 und UltraEdit“ · Mikrocontroller und Digitale Elektronik ·
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PDF
EEPROM.pdf
CHARACTERISTICS Electrical Characteristics: AC CHARACTERISTICS Industrial (I):VCC = +1.8V to 5.5V TA= -40°C to +85°C Automotive (E):VCC = +2.5V to 5.5V TA= -40°C to +125°C Param. No. Sym. Characteristic Min. Max. Units Conditions 1 FCLK Clock frequency — 100 kHz 1.8V ≤ CC < 2.5V — 400 2.5V ≤ VC ≤ 5.5V — 400
in „EEPROM auslesen (24xx256) mit Pic16f819, an PC über RS232“ · Mikrocontroller und Digitale Elektronik ·
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irf540n.pdf
21 ––– ––– S VDS = 50V,DI = 16AR ––– ––– 25 V = 100V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 80V, GS = 0V, J = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V = 20V IGSS nA GS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Q Total Gate Charge ––– ––– 71 I = 16A
in „Mosfet vor negativer Spannung / Wechselspannung schützen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Richtek-Tech-RT9193-33GB.pdf
X7R )90 CIN C OUT= 1μF X7R A V (85 ( 1.6 n g e l u80 o 1.5 C t n75 u c u 1.4 s O i70 Q 1.3 65 1.2 60 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature ( °) Temperature (°C) Dropout Voltage vs. Load
in „CH340C bricht Verbindung ab / Reset“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RT9193-33GB.pdf
X7R )90 CIN C OUT= 1μF X7R A V (85 ( 1.6 n g e l u80 o 1.5 C t n75 u c u 1.4 s O i70 Q 1.3 65 1.2 60 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature ( °) Temperature (°C) Dropout Voltage vs. Load
in „Fragen Stromversorgung / Schaltplan“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl2203n.pdf
Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID= 100A e ) n ( t n TJ= 25 C i 2.0 e e u R C TJ= 175 C n ) e O e 1.5 u r li o100 u a - S mo - t N 1.0 i n ( r a D D , , 0.5 ID n ( V DS = 15V D 20µs PULSE WIDTH R VGS =10V 10 0.-60 -40 -20 0 20 40 60 80 100 120 140 160 180 2.0 3.0
in „Saito Pro Charger Batterieladegerät - Mikrocontroller ATmel ATTINY26L defekt?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AP5724_Backlightdriver.pdf
) y 80 c 6 LEDs i 70 i f E 60 50 40 2.5 3 3.5 4 4.5 5 VIN (V) AP5724 6 of 15 December 2013 Document number: DS31843 Rev. 4 - 2 www.diodes.com © Diodes Incorporated AP5724 Typical Performance Characteristics
in „Fehlersuche Backlightdriver startet nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1-buz171.pdf
Transconductance gfs S V ≥2 I R I = -5 A 1.5 2.3 - DS * D * DS(on)max, D Input capacitance C iss pF V GS= 0 V, DS = -25 V, f = 1 MHz - 750 1000 Output capacitance C oss V = 0 V, V = -25 V, f = 1 MHz - 270 400 GS DS Reverse transfer capacitance C rss V GS
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
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irsf3010.pdf
Drain Current — self limited Pd PowerDissipation — 40 W Tc ≤ 25°C Linear Derating Factor for Tc°C 25 — 0.33 W/°C EAS UnclampedSinglePulseInductiveEnergy — 400 mJ Vesd1 Electrostatic Discharge Voltage (Human Body Model) — 4000 1000pF. 1.5k V Vesd2 (Machine Model) —
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PDF
20002019c.pdf
µ INPUT = 1 V 1.8 t 140 ( 1.7 e 120 o r h 1.6 C 100 e 1.5 t 80 h V e t 1.4 LO s 60 u 1.3 i 40 n 1.2 u INPUT = 0 I Q 20 1.1 0 1 4 6 8 10 12 14 16 18 -40 -25 -10 5 20 35 50 65 80 95 110 125 Supply Voltage (V) o Temperature ( C) FIGURE 2-9: Quiescent
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PDF
564746-da-01-en-MOSFET_N_KA_800V_STP4N80K5_TO_220AB_STM.pdf
62.5 °C/W (1) R thj-pcb Thermal resistance junction-pcb max 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu DocID025105 Rev 3 3/23 23 Electrical characteristics STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
in „Anodenspannungsstabilisierung für Röhrenverstärker mit IRF840 als Längsregler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
KM416C1204C.pdf
ADDRESS ADDRESS ADDRESS ¡ó tWCS WCH WCS tWCH WCS WCH VIH - WP WP ¡ó tWP W VIL - ¡ó V IH- OE V IL- ¡ó tDS DH tDS tDH tDS DH DQ0 ~ DQ7 V IH- ¡ó VALID VALID VALID V IL- DATA-IN DATA-IN DATA-IN ¡ó DQ8 ~ DQ15 V IH- V IL- Don′t care Undefined KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM HYPER PAGE
in „Suche DRAM Chips“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DUE_Faradays_law.pdf
analogWrite(DAC0, n); ... We choose 1 dn 10 for upanddown. To avoid densely packed signals of the C# oscilloscope we usedifferent ds steps in addition. while(brun && n<i) { Serial.println(values[n]); n+=ds; ... To enter all thednnumbers required, we introducea second form inC# for adialog. For ArduinoDUEthe
in „Arduino Due in plain C“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
20 5 4 15 3 10 2 5 1 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC T C Safe operating area Transient thermal impedance I = (V ) Z = (t ) D DS th JC p parameter: D = 0.01, T = 25°C parameter: D = t / T C p 10 2 101 p = 43.0µs
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PDF
IRF3205S.pdf
6000 V = 0V, f = 1 MHZ 16 I = 62A GS D Ciss= Cgs + Cgd, ds SHORTED V 14 V DS= 44V 5000 Crss = Cgd ( V DS= 27V C = C + C g V DS= 11V ) oss ds gd l 12 F4000 o e Ciss V 10 n r i u c3000 S 8 p o C - 6 ,2000 Coss a C G , 4 1000 G Crss V 2 0 0 1 10 100 0 20 40 60
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
22070a-53890.pdf
IOUT= 200 mA a -0.20 VOUT= 5.0V i 0.02 I = 300 mA o L 0.01 OUT L -0.25 0.00 -0.30 -45 -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130 Temperature (°C) Temperature (°C) FIGURE 2-15: Line Regulation vs. FIGURE 2-18: Load Regulation vs. Temperature. Temperature. © 2007 Microchip Technology Inc. DS22070A-page
in „[V] 50St.LowNoise Microchip LDO MCP1824T 3,3V/300mA SOT223-5 mit Shutdown“ · Markt ·
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PDF
TC4420.pdf
supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T = +25°C with 4.5V ≤ V ≤ 18V. A DD 120 100 100 C L 10,000 pF 80 ) 80 s c C L= 10,000 pF ( s 60 e 60 ( i C L 4700 pF e C = 4700 pF T 40 T 40 L C L 2200 pF C L= 2200 pF 20 20 0 0 5 7 9 11 13 15 5 7 9 11 13 15 Supply
in „Peltier-Driver Flyback-Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP9501-2-3-4.pdf
4.1V 90% f H 2.0 10.0 y ( VOL DD= 2.7V DV S t O D) V 1.5 9.0 r V 5% 85% = s S 1.0 8.0 s Y HYST = DD C H 0.5 7.0 ) 0% 80% 0.0 6.0 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 TA(°C) T A(°C) FIGURE 2-5: V OL V OH vs. Temperature. FIGURE 2-2: Hysteresis vs. Temperature. 3.0 105 40 VPOR P)
in „Thermal Shutdown“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP320412-bitA-DConverterDatasheet.pdf
flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-108 2002 Microchip Technology Inc. DS21298C-page 27 MCP3204/3208 NOTES: DS21298C-page 28 2002 Microchip Technology Inc. MCP3204/3208 ON-LINE SUPPORT SYSTEMS INFORMATION AND UPGRADE HOT LINE Microchip
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PDF
MCP6562.pdf
Input Voltage. Common-mode Input Voltage. © 2009 Microchip Technology Inc. DS22139B-page 7 MCP6561/1R/1U/2/4 Note: Unless otherwise indicated, V DD = +1.8V to +5.5V, V SS = GND, T =A+25°C, V + = VIN DD /2, VIN– = GND, R L 10 kΩ to V DD /2, and C L 25 pF. 400 120 100 mV Over-Drive 0dB Output Attenuation TA= -40°C V = V /2 T = +25°C 350 CM DD 80 A RL= Open TA= +85°C 300 VDD= 5.5V 40 TA= +125°C ) A250 A ( ( 0 I200 S I -40 T = -40°C VDD= 1.8V A 150 TA= +25°C -80 TA= +85°C 100 TA= +125°C -120 50 1k 1 k 1 k 1M 10M
in „Schmitttrigger mit MCP6562 unklare Abweichung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
projekt_snt.pdf
Spannungsfestigkeit eingeplant. Es standen zwei Bauteile zur Verfügung: • IXFX26N90 R ≈ 0,3Ω R ≈ 0,54Ω C ≈ 700pF DS_On(25°C) DS_On(125°C) DS • 2SK1489 R DS_On(25°C)1,0Ω RDS_On(125°C)1,84Ω C DS≈ 300pF 4.7.2 Durchlaßverluste Zur Berechnung der Durchlaßverluste wurden die primären Effektivströme bei maximaler
in „2kW Gleichstromleistung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
e2928_a8v-vm_se.pdf
• • 256MB Kingston KVR333X64C25/256 Hynix DS HY5DU56822BT-D43 • 512MB Kingston KVR333X64C25/512 Kingston DS D3208DH1T-6 • 512MB Kingston KVR400X64C3A/512 Hynix DS HY5DU56822BT-D43 • • 512MB Kingston KVR400X64C3A/512 Kingston DS D3208DH1T
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PDF
2N4416.pdf
Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage 10 500 100 20 ) r @ I = 300 mA,V = 0 V s Ω DS D GS A I − ( gos@ VDS = 10 V, GS= 0 V g ( 16 DSS 8 F c 400 f = 1 kHz 80 s t r a − e a i O u d e p C g 6 T - 300 rDS 60 u i 12 fs n n c r c O gos n D n r u i d o 40 t r 8 4 c - 200 n t n i e a c r µ −
in „OP-Amp schützen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
xfft_ds260.pdf
3240 16.53 1 1k Str Y 16 24 U C R N - 3 Y XC3SD3400A 3277 4654 4908 5 80 196 2202 11.23 r n 1 1k Str N 16 16 S C R N - 3 Y XC3SD3400A 2151 3263 3118 4 40 212 2171 10.24 n c 1 1k Str N 16 16 S C R N - 3 N XC3SD3400A 2307 3693 3466 4
in „Implementierung der XILINX FFT-Core“ · FPGA, VHDL & Co. ·
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PDF
EUA2005.pdf
5.0 V - Common Mode Input Voltage - V IC Figure14. Figure15. Figure16. Figure17. Figure18. Figure19. DS2005 Ver 1.1 Nov. 2006 8 EUA2005 SUPPLY RIPPLE REJECTION RATIO vs DC COMMON MODE VOLTAGE 0 -10 d - -20 t a R -30 i c j -40 e V DD.5V e -50 VDD3.6V p i R -60 VDD5V l p u -70 S -80 0.0 0.5 1.0 1.5 2.0 2.5
in „"Brainstorming" Verstärker für hochohmige Kopfhöhrer“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
21709c_EEPROM.pdf
flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091 2003 Microchip Technology Inc. DS21709C-page 17 24AA02/24LC02B APPENDIX A: REVISION HISTORY Revision C Corrections to Section 1.0, Electrical Characteristics. DS21709C-page 18 2003 Microchip
in „EEPROM mit Infineon XC2200 ueber IIC benutzten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
21709c.pdf
flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091 2003 Microchip Technology Inc. DS21709C-page 17 24AA02/24LC02B APPENDIX A: REVISION HISTORY Revision C Corrections to Section 1.0, Electrical Characteristics. DS21709C-page 18 2003 Microchip
in „24LC02B mit (scheinbar) seltsamer Adressierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_Memory_Programming_Specification.pdf
(0x000-0x3FF) r o User ID Locations 200h respectively, is user program memory. The second half, e c 203h (0x200-0x3FF) and (0x400-0x7FF) respectively, is M p Backup OSCCAL value 204h configuration memory. The PC will increment from f S 205h o (0x000-0x1FF) and (0x000-0x3FF) respectively, then C Reserved
in „Programm aus PIC12F508 laden und verstehen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP23017-Datasheet.pdf
5.5V 1.7 MHz mode 20 — 80 ns 4.5V – 5.5V Note 1: This parameter is characterized, not 100% tested. 2: CB is specified to be from 10 to 400 pF. DS20001952C-page 6 2005-2016 Microchip Technology Inc. MCP23017/MCP23S17 2 TABLE
in „kennt jemand sich aus mit MC23017 IO-Board“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APT34F100B2_L_D-1593638.pdf
O VDS= 200V R V 10 U E C C VDS= 500V I 80 R 8 A TJ= 25°C O R - D 60 O 6 S - VDS= 800V R TJ= 150°C E 4 V 40 0 A E - G R, 8 ,S 2 D 20 D G IS V e 0 0 R 0 50 100 150 200 250 300 350 400 0 0.3 0.6 0.9 1.2 1.5 Qg, TOTAL GATE CHARGE
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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TC4426.pdf
FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Supply Voltage. Voltage. 100 100 5V 5V 80 80 c 10V c s 60 s 60 10V ( 15V ( E L 15V I A tR 40 tF 40 20 20 0 0 100 1000 10,000 100 1000 10,000 CLOAD (pF) C LOAD (pF) FIGURE 2-2: Rise Time vs. Capacitive FIGURE 2-5: Fall Time vs. Capacitive Load
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·