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PDF
irf7314.pdf
Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA V GS= -12V Gate-to-Source
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APM2095.pdf
V a Diode Forward Voltage I =-1A , V =0V -0.7 -1.3 V SD b SD GS Dynamic Q g Total Gate Charge V DS=-10V , DS=-3.6A 11 15 Q gs Gate-Source Charge V =-4.5V 2 nC GS Q gd Gate-Drain Charge 1.5 td(ON) Turn-on Delay Time 13 22 Tr Turn-on Rise Time V DD10V , I DS3.6A , 36 56 ns td(OFF) Turn-off Delay Time
in „Ersatztyp P-Kanal MosFet APM2095P low gate voltage“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TPH1R104PB_Datasheet.pdf
DSSID= 10 mA, GS = 0 V 40 V V (BR)DSXID= 10 mA, GS = -20 V 20 Gate threshold voltage Vth V DS= 10 V,DI = 0.5 mA 2.0 3.0 Drain-source on-resistance RDS(ON) V GS= 6 V,DI = 60 A 1.30 1.96 mΩ V GS= 10 V,DI = 60 A 0.95 1.14 6.2. Dynamic Characteristics (T a = 25 unless otherwise specified) Characteristics
in „MOSFET's umgekehrt betrieben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPH1R104PB_datasheet_en_20181228.pdf
DSSID= 10 mA, GS = 0 V 40 V V (BR)DSXID= 10 mA, GS = -20 V 20 Gate threshold voltage Vth V DS= 10 V,DI = 0.5 mA 2.0 3.0 Drain-source on-resistance RDS(ON) V GS= 6 V,DI = 60 A 1.30 1.96 mΩ V GS= 10 V,DI = 60 A 0.95 1.14 6.2. Dynamic Characteristics (T a = 25 unless otherwise specified) Characteristics
in „Einfluss von thermischen Vias auf den Wärmetransport eines MOSFETs“ · Platinen ·
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PDF
162828-da-01-en-IRLML_2803TR.pdf
Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLML2803 RD Q G V DS 10V VGS Q Q D.U.T. GS GD R G + -VDD VG 10V Pulse Width ≤ 1 µs Charge Duty Factor ≤ 0.1 % Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS
in „PWM RGB-Led Beleuchtung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
fm600tu-07a_e.pdf
CHARACTERISTICS TRANSFER CHARACTERISTICS (TYPICAL) Chip (TYPICAL) Chip 600 600 VGS = 20V 12V 10V V DS= 10V ) 500 ) 500 A 15V A D D I 400 I 400 T T Tch= 125°C Tch= 25°C E E R 300 R 300 U U C 9V C N 200 N 200 A A R R D 100 D 100 Tch= 25°C 0 0 0 0.2 0.4 0.6 0.8 1.0 5 7 9 11 13 15 DRAIN-SOURCE VOLTAGE V DS
in „Wechselrichter mit MOSFET Endstufe“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2sk3142.pdf
admittance |y | 45 75 — S I = 30 A, V = 10 VNote 1 fs D DS Input capacitance Ciss — 6800 — pF V DS= 10 V Output capacitance Coss — 1550 — pF V GS= 0 Reverse transfer capacitance Crss — 500 — pF f = 1MHz Total gate charge Qg — 130 — nc V DD= 10 V Gate to source charge Qgs — 16 — nc V GS= 10 V Gate to
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ssr2n60a.pdf
-- V V DS DSS DD Vary tpto obtain ID BV DSS required peakDI I AS R I (t) G C VDD D DUT V V (t) DD DS 10V p tp Time N-CHANNEL SSR/U2N60A POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS -- IS L Driver V GS RG Same Type as DUT V DD V GS •dv/dt controlled by GR ” •IScontrolled
in „Ersatz für SSR2N60A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
625945.pdf
line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3569 I – V D – VDS D DS 10 20 COMMON SOURCE 6 5.3 10 8 COMMON SOURCE Tc = 25°C 5.1 6 Tc = 25°C ) PULSE TEST ) PULSE TEST ( 8 ( 16 10,8 5 5.5 I I 4.8 5.25 T 6 T 12 N N R 4.6 R 5 R R U 4 U 8 4.75 C 4.4 C I I A 4.2 A 4.5 R 2 D
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LND150_C041114.pdf
10K 100K O Tj( C) RSOURCE (Ω) Transfer Characteristics V and R Variation with Temperature GS(OFF) DS 10 1.8 VDS 400V 2.0 1.6 T = -55°C R @ I = 1.0mA A ) DS(ON) D 1.6 d e e s 25°C i l p a 1.4 a m 125°C m r i 5 r 1.2 o i n ( ( (F N I O 1.2 S S D VG 0.8 R VGS(OFF) 100nA 1.0 0.4 0 -1 0 1 2 3 0.-50 0 50 100
in „DDR- Mosfet SM104 in Sinusgenerator GF22“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfp260n.pdf
1 µs r u0 Duty Factor ≤ 0.1 % C n n a a r 20 Fig 10a. Switching Time Test Circuit D ,0 , ID ID V DS 10 10 90% 025 50 75 100 125 150 175 025 50 75 100 125 150 175 T C Case Temperature ( C) ° 10% T C Case Temperature ( C) ° V GS d(on) tr d(off)f Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time
in „Strom bei 50 A begrenzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
UPA1721.pdf
10A r 10 s f n 60 n TA= 25˚C O r 25˚C e 50 T 75˚C r r 150˚C o 40 w 1 S o t 30 F i - r 20 f D 10 | V DS=10V ) 0.1 Pulsed ( 0.01 0.1 1 10 100 D 00 5 10 15 R D- Drain Current - A V GS- Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUT-OFF VOLTAGE vs. RESISTANCE vs. DRAIN CURRENT CHANNEL
in „RC-Steller Kontronik Smile 30-6-12 Bestückung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSS138-D.PDF
1.1 5.8 D(on) On–State Drain Current V GS= 10 V, VDS = 5 V 0.2 A gFS Forward Transconductance V DS= 10V, D = 0.22 A 0.12 0.5 S Dynamic Characteristics Ciss Input Capacitance V = 25 V, V = 0 V, 27 pF DS GS Coss Output Capacitance f = 1.0 MHz 13 pF Crss Reverse Transfer Capacitance 6 pF R Gate Resistance
in „Wer kann Helfen versehentlicher Kurzschluss. Wer kennt dieses Bauteil?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2N7000.pdf
5. Dynamic o l Symbol Parameter Test conditions Min. Typ. Max. Unit b g fs1) transconductance -V DS= 10 V, D= 0.5 A 0.6 S ) Ciss Output capacitance V = 25 V, f = 1 MHz, 43 pF Coss Reverse transfer VGSS= 0 20 pF Crss capacdtance 6 pF d(on) rurn-on delay time 5 ns tr P Rise time V DD= 30 V,DI = 0.5 A 15
in „Schaltung mit 2 N-Kanal Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NTS4409N-D.pdf
NTS4409N, NVS4409N TYPICAL PERFORMANCE CURVES (TJ= 25°C unless otherwise noted) 3.2 3.2 8 V TJ= 25°C V DS≥ 10 V ) ) P 4.5 V P M2.4 3 V M2.4 ( ( T 2.5 V V = 2 V T N GS N R R R1.6 R1.6 U U C C I I R R D,.8 D,.8 ID VGS = 1.5 V ID 25°C TJ= 125°C TJ= −55°C 0 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4 VDS, DRAIN−
in „SMD Identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF_1404_S.pdf
Drain-to-Source On-Resistanc––– 0.00350.004 VGS= 10V, D = 95A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= 10V, D = 250µA gfs Forward Transconductance 106 ––– ––– S VDS= 25V, D = 60A DSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS= 40V, VGS = 0V ––– ––– 250 VDS= 32V, VGS = 0V, J = 150°C I Gate-to-Source
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2sk3115.pdf
i 25 ˚C l m 75 ˚C o A 125 ˚C f 3.0 r - s u n 1.0 C r t 2.0 d a a - w o o S 1.0 - V VDS= 10 V | V DS= 10 V I = 1mA y 0 | 0.1Pulsed −50 0 50 100 150 0.1 1.0 10 Tch- Channel Temperature -˚C ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE GATE TO SOURCE VOLTAGE RESISTANCE
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf_1404.pdf
Drain-to-Source On-Resistanc––– 0.0035 0.004 VGS= 10V, D = 95A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= 10V, D = 250µA gfs Forward Transconductance 106 ––– ––– S VDS= 25V, D = 60A DSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS= 40V, VGS = 0V ––– ––– 250 VDS= 32V, VGS = 0V, J = 150°C GSS Gate-to-Source
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·
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sch_lay.pdf
Steuerspannung P1S2B01 LED 30S1A03 3 1k P0S1A02 220 270 150 P +5 P0DS901 P0DS902 P0S0A00 2 1 nF Drehschalter DS10 10S1A01 P1Q301 Q3 2 C1 P0R302 0 R3 LED P0C101 P0C102 Schmitt-Trigger BC807 0 P0R3903 1 0 B P3 50k P0DS1001 P0DS1002 Drehschalter 3 30 B 1 +12 100 pF R38 2P0R3902 01 R40 P R P0R3801 P0R3802 PP0R4001
in „signal- bzw. funktionsgenerator mit OPs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUZ71.pdf
Specified (Continued) 102 15 ) PULSE DURATION = 80µs ID= 18A ( DUTY CYCLE = 0.5% MAX V T ( N G R A V DS= 10V R L U 101 V 10 C o E VDS= 40V I TJ= 150 C TJ= 25 C C R U D O O S T 0 O C 10 E 5 R T O G S S D G I V 10-1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 VSD, SOURCETO DRAINVOLTAGE (V) Q g, GATE CHARGE (nC)
in „BUZ 71 Wie anschliessen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
at-240160bx1.pdf
Clock Width “H” Pulse Width tWCKH 15 ns Clock Width “L” Pulse Width tWCKL 15 ns Data Set Up Time DS 10 ns Data Hold Time tDH 12 ns Latch Pulse “H” Pulse Width tWLPH 15 ns Shift Clock to Latch Pulse tLD 0 ns Rise Time Shift Clock to Latch Pulse Fall Time SL 30 ns Latch Pulse to Shift Clock LS 25 ns Rise
in „Kennt jemand das Teil?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tpc8123.pdf
decrease in maximum rating of drain-source voltage. 3 2009-07-27 TPC8123 I – V I – V −10 D DS D DS −10 −40 Common source −3 −2.5 −2.4 −2.3 −4.5 −3.4 −3 −2.8 Ta = 25°C Common source Pulse test Ta = 25°C −6 ) −8 −2.6 Pulse test ) −32 −2.6 ( ( −10 −3.6 D −4.5 −2.2 D −2.5 I −6 I −24 t t e e −2.4 r r c −
in „Autobatterie Ladegerät Transistor defekt - Äquivalentes Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF3708PBF.pdf
40 Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % i r 30 D , Fig 10a. Switching Time Test Circuit I 20 V DS 10 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS d(on) tr td(off)f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 )C h t ( 1 D = 0.50 e n o
in „Transistor zum Schalten von 24V/12V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf.pdf
GS= -12V R G Internal Gate Resistance ––– 1.7 ––– Ω gfs Forward Transconductance 19 ––– ––– S V DS= 10V, D = 5.0A Q g Total Gate Charge ––– 6.8 ––– ID = 5.0A nC Q gs Gate-to-Source Charge ––– 0.3 ––– V DS=15V Q Gate-to-Drain ("Miller") Charge ––– 2.4 ––– V = 4.5V d gd GS td(on) Turn-On Delay Time ––
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ne25139.pdf
California Eastern Laboratories NE25139 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) T(VDSA= 5 V, G2SR= 0 V, DS= 10 mA) (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS FREQ. NFOPT GA Γ OPT V DS Drain to Source Voltage V 13 (GHz) (dB) (dB) MAG ANG Rn/50 VG1S Gate 1 to Source Voltage V -4.5 0.5 0.9 18.5 0.9 18 1.9 0.9
in „GaAs NE25139 ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF3708_IR__1_.pdf
40 Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % i r 30 D , Fig 10a. Switching Time Test Circuit I 20 V DS 10 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS d(on) tr td(off)f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 )C h t ( 1 D = 0.50 e n o
in „Mosfet Treiberschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3708_IR__1_.pdf
40 Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % i r 30 D , Fig 10a. Switching Time Test Circuit I 20 V DS 10 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS d(on) tr td(off)f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 )C h t ( 1 D = 0.50 e n o
in „24V-Ausgang potentialgetrennt aus einem STM32 3,3V“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6344pbf-1228041.pdf
GS= -12V R G Internal Gate Resistance ––– 1.7 ––– Ω gfs Forward Transconductance 19 ––– ––– S V DS= 10V, D = 5.0A Q g Total Gate Charge ––– 6.8 ––– ID = 5.0A nC Q gs Gate-to-Source Charge ––– 0.3 ––– V DS=15V Q Gate-to-Drain ("Miller") Charge ––– 2.4 ––– V = 4.5V d gd GS td(on) Turn-On Delay Time ––
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ADG714_715.pdf
Comments ANALOG SWITCH Analog Signal Range V to V V SS DD On Resistance (RON) 2.5 Ω typ V S V SS V DD , DS= 10 mA 4.5 5 Ωmax On Resistance Match Between Channels (ΔRON) 0.4 Ωtyp V S V SS V DD , DS= 10 mA 0.8 Ω max On Resistance Flatness (R ) 0.6 Ω typ V = V to V , I = 10 mA FLAT(ON) S SS DD DS 1 Ω max LEAKAGE
in „Arduino Uno & ADG714 via SPI funktioniert nur sporadisch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74f595.pdf
with output latches (3-State) 74F595 LOGIC SYMBOL IEC/IEEE SYMBOL (IEEE/IEC) 13 EN3 14 12 C2 SRG8 Ds 10 13 OE R 11 C1/ ▯ 12 STCP Qs 14 11 SHCP 9 1D 2D 3 15 1 10 SHR Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 2 3 4 15 1 2 3 4 5 6 7 5 VCC = Pin 16 6 GND = Pin 8 SF01097 7 2D 3 9 SF01098 MODE SELECT – FUNCTION TABLE INTERNAL
in „Schnelleres IC als STPIC6C595“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SeikoLCD.pdf
CL2 "H" pulse width tWCL2H 37 - - nsec CL2 "L" pulse width WCL2L 37 - - nsec CL2 data setup time tDS 10 - - nsec CL2 data hold time tDH 10 - - nsec CL2 rise to CL1 rise time tLD - - - nsec CL2 fall to CL1 fall time SL 100 - - nsec CL1 rise to CL2 rise time tS - - - nsec Cl1 fall to CL2 fall time tLH
in „Game Boy Classic Display mit 8051 oder Z80 ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf740pbf.pdf
4.5 V n r a 100 D 100 D D 4.5 V , I ID 20 µs Pulse Width 20 µs Pulse Width T = 25 °C V = 50 V C -1 DS 10-1 100 101 10 4 5 6 7 8 9 10 V , Drain-to-Source Voltage (V) 91054_01 DS 91054_03 VGS ,Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, T C 25 °C Fig. 3 - Typical Transfer Characteristics
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TN2404K.pdf
V, GS = 0 V 1 Zero Gate Voltage Drain Current DSS V = 192 V, V = 0 V, T = 55 °C 10 µA DS GS J V DS10 V, GS = 10 V 0.8 On-State Drain Current ID(on) A VDS 10 V, GS = 4.5 V 0.5 VGS 10 V,DI = 0.3 A 2.2 4 a R V 4.5 V, I = 0.2 A Drain-Source On-State Resistance DS(on) GS D 2.3 4 VGS 2.5 VD I
in „MOSFET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ADG714.pdf
Comments ANALOG SWITCH Analog Signal Range V to V V SS DD On Resistance (RON) 2.5 Ω typ V S V SS V DD , DS= 10 mA 4.5 5 Ωmax On Resistance Match Between Channels (∆RON 0.4 Ωtyp V S V SS V DD , DS= 10 mA 0.8 Ω max On Resistance Flatness (R ) 0.6 Ω typ V = V to V , I = 10 mA FLAT(ON) S SS DD DS 1 Ω max LEAKAGE
in „Analogschalter mit 8 Ein-und Ausgänge“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sct2080ke.pdf
.8 Typical Transfer Characteristics Fig.9 Typical Transfer Characteristics (II) 100 40 VDS= 10V V DS= 10V Pulsed 35 Pulsed 10 30 ] ] [ [ D D 25 : Ta= 150ºC : n 1 Ta= 75ºC n 20 e T = 25ºC e Ta= 150ºC u a u Ta= 75ºC C Ta= 25ºC C 15 Ta= 25ºC i i T = 25ºC r 0.1 r 10 a D D 5 0.01 0 0 2 4 6 8 10 12 14 16
in „Verarmungs- oder Anreicherungstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SI4946CDY.pdf
current IDSS DS GS μA VDS = 60 V, VGS = 0 V, TJ= 70 °C - - 10 a On-state drain current ID(on) V DS≤ 10 V, VGS = 10 V 8 - - A V = 10 V, I = 5.2 A - 0.0330 0.0409 Drain-source on-state resistance a R DS(on) GS D Ω V GS = 4.5 V,DI = 4.6 A - 0.0430 0.0516 a Forward transconductance gfs VDS = 30 V, D = 5.2
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
,GS= 0 V P-Ch - 0.8 - 1.2 b Dynamic N-Ch 0.72 1.5 Total Gate Charge Qg N-Channel P-Ch 0.52 1.8 V DS= 10 V, GS = 4.5 VD I = 0.29 A N-Ch 0.22 Gate-Source Charge Q gs nC P-Channel P-Ch 0.11 N-Ch 0.13 Gate-Drain Charge Q gd VDS = - 10 V,GS= - 4.5 VD I = - 0.41 A P-Ch 0.14 Turn-On Delay Time t N-Ch 23 40
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
,GS= 0 V P-Ch - 0.8 - 1.2 b Dynamic N-Ch 0.72 1.5 Total Gate Charge Qg N-Channel P-Ch 0.52 1.8 V DS= 10 V, GS = 4.5 VD I = 0.29 A N-Ch 0.22 Gate-Source Charge Q gs nC P-Channel P-Ch 0.11 N-Ch 0.13 Gate-Drain Charge Q gd VDS = - 10 V,GS= - 4.5 VD I = - 0.41 A P-Ch 0.14 Turn-On Delay Time t N-Ch 23 40
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1551dl.pdf
,GS= 0 V P-Ch - 0.8 - 1.2 b Dynamic N-Ch 0.72 1.5 Total Gate Charge Qg N-Channel P-Ch 0.52 1.8 V DS= 10 V, GS = 4.5 VD I = 0.29 A N-Ch 0.22 Gate-Source Charge Q gs nC P-Channel P-Ch 0.11 N-Ch 0.13 Gate-Drain Charge Q gd VDS = - 10 V,GS= - 4.5 VD I = - 0.41 A P-Ch 0.14 Turn-On Delay Time t N-Ch 23 40
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NDT455N.pdf
Circuit . Figure 12. Switching Waveforms . NDT455N Rev.F Typical Thermal Characteristics )40 3.5 S N V DS=10V TJ= -55°C ) 1a E ( 3 E N S30 25°C I ( A C 125°C I 2.5 N S A D C R 2 U20 E D W O P C E 1.5 S A 1b A10 T R Y 1c 4.5"x5" FR-4 Board , D 1 T = 25 C S E A gF T Still Air 0 S 0.5 0 6 12 18 24 30 0 0.2 0.4
in „Fairchild 918 455 -> Ersatz?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2080ke-e.pdf
.8 Typical Transfer Characteristics Fig.9 Typical Transfer Characteristics (II) 100 40 VDS= 10V V DS= 10V Pulsed 35 Pulsed 10 30 ] ] [ [ D D 25 : Ta= 150ºC : n 1 Ta= 75ºC n 20 e T = 25ºC e Ta= 150ºC u a u Ta= 75ºC C Ta= 25ºC C 15 Ta= 25ºC i i T = 25ºC r 0.1 r 10 a D D 5 0.01 0 0 2 4 6 8 10 12 14 16
in „Datenblatt fraglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2750ny-e.pdf
Voltage Fig.11 Transconductance vs. Drain Current vs. Junction Temperature 5 1 ] 4.5 VGS= VDS V DS= 10V [ D = 0.63mA Pulsed ( 4 ] S [ V 3.5 f : : g 3 e t n o 2.5 t 0.1 V u l 2 d h o e 1.5 s Ta= 175ºC h n Ta= 125ºC T 1 r T = 75ºC t T Ta= 25ºC a 0.5 a G Ta= 25ºC 0 0.01 -50 0 50 100 150 200 0.01 0.1 1
in „"Leiterbahn-Sicherung" erstezen - was würdet ihr tun?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PH7030L.pdf
7.9 mΩ see Figure 9; see Figure 10 Dynamic characteristics QG(tot) total gate charge D = 20 A; V DS= 10 V; V GS = 5 V; - 12 - nC Tj= 25 °C; see Figure 11 QGS gate-source charge - 4.1 - nC Q gate-drain charge - 3.2 - nC GD Ciss input capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz; - 1362 - pF T = 25 °C;
in „Am3 Mainboard Vcore instabil wenn kalt“ · PC Hard- und Software ·
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PDF
STD60N55F3.pdf
Drain-source breakdown V(BR)DSS voltage D = 250µA, GS= 0 55 V V = Max rating, DSS Zero gate voltage drain DS 10 µA current (GS= 0) VDS = Max rating,Tc = 125°C 100 µA Gate body leakage current GSS VGS = ±20V ±200 nA (VDS = 0) VGS(th) Gate threshold voltage VDS= VGS, D = 250µA 2 4 V R Static drain-source on V
in „Frage zu MOSFET STF60N55F3“ · Mikrocontroller und Digitale Elektronik ·
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PDF
at27c512.pdf
OE/VPP Setup Time 2 s t OE/V Hold Time 2 s OEH PP Input Rise and Fall Times t Data Setup Time 2 s DS (10% to 90%) 20ns t Address Hold Time 0 s AH t Data Hold Time Input Pulse Levels 2 s DH 0.45V to 2.4V CE High to tDFP Output Float Delay2) 0 130 ns Input Timing Reference Level t V Setup Time 0.8V to 2.0V
in „Eprom Vergleichstyp“ · Mikrocontroller und Digitale Elektronik ·
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Datei
SP601_RevC_annotated_master_ucf_8-28-09.ucf
#NET "FPGA_HSWAPEN" LOC = "D4"; ## 1 on R81 100 ohm to GND #NET "FPGA_INIT_B" LOC = "U3"; ## 1 on DS10 (thru series R90 27.4 ohm) #NET "FPGA_M0_CMP_MISO" LOC = "T15"; ## 1 on J3, 1 on SW2 DIP Sw #NET "FPGA_M1" LOC = "N12"; ## 2 on SW2 DIP Sw #NET "FPGA_MOSI_CSI_B_MISO0" LOC = "T13"; ## 15 on U17, 5 on
in „Ethernet GMII“ · FPGA, VHDL & Co. ·
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Datei
SP601_RevC_annotated_master_ucf_8-28-09.ucf
#NET "FPGA_HSWAPEN" LOC = "D4"; ## 1 on R81 100 ohm to GND #NET "FPGA_INIT_B" LOC = "U3"; ## 1 on DS10 (thru series R90 27.4 ohm) #NET "FPGA_M0_CMP_MISO" LOC = "T15"; ## 1 on J3, 1 on SW2 DIP Sw #NET "FPGA_M1" LOC = "N12"; ## 2 on SW2 DIP Sw #NET "FPGA_MOSI_CSI_B_MISO0" LOC = "T13"; ## 15 on U17, 5 on
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PDF
ALD110800-1489.pdf
(408) 747-1155 Fax: (408) 747-1286 www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, DS 10.6V Gate-Source voltage, VGS 10.6V Power dissipation 500 mW Operating temperature range SCL, PCL, SAL, PAL package 0°C to +70°C Storage temperature range -65°C to +150°C Lead temperature, 10 seconds
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PDF
lt1153.pdf
Thermal Overload Shutdown and 10 A Standby Current 12V + 470 F 0.02 5V ON/OFF IN V S 0.1 F 100k 51k CT DS 10k 0.33 F LTC1153 2N2907 STATUS G IRFZ34 120k 12V 240 GND SD MOTOR *PTC FAULT THERMISTOR M 1N5400 LED (100°C) *RL3006-50-100-25-PTO KEYSTONE MOUNT ON MOTOR CHASIS OR MOSFET HEAT SINK LTC1153 • TA15 14
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PDF
AV02-0699EN.pdf
ns 5 Chip Enable HoldTime to Rising Clock Edge ceh 20 20 ns 6 Data SetupTime to Rising Clock Edge ds 10 10 ns 7 Data HoldTime after Rising Clock Edge dh 10 10 ns [1] 8 Rising Clock Edge to D OUT dout 10 40 10 65 ns 9 Propagation Delay D to D t 18 30 ns IN OUT [1,2] doutp Simultaneous Mode for One IC
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