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ADC0804_NSC.pdf
Supply Voltage RD to Output Data Valid vs. Supply Voltage A vs. Load Capacitance D 0 8 4 A D C 0 0 5 DS005671-38 DS005671-40 DS005671-39 fCLK vs. Clock Capacitor Full-Scale Error vs Effect of Unadjusted Offset Error Conversion Time vs. VREF/2 Voltage DS005671-41 DS005671-42 DS005671-43 Output Current vs
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ADC0801_05.pdf
Supply Voltage RD to Output Data Valid vs. Supply Voltage A vs. Load Capacitance D 0 8 4 A D C 0 0 5 DS005671-38 DS005671-40 DS005671-39 fCLK vs. Clock Capacitor Full-Scale Error vs Effect of Unadjusted Offset Error Conversion Time vs. VREF/2 Voltage DS005671-41 DS005671-42 DS005671-43 Output Current vs
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AON6500.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DS=0V, VGS ±20V 100 nA VGS(th) Gate Threshold Voltage V DS GS, D=250 A 1 1.4 2 V V =10V, I =20A 0.75 0.95 GS D m R DS(ON) Static Drain-Source On-Resistance
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NDP6020P.pdf
ZeroGateVoltage DrainCurrent VDS-16 V,V =0VGS -1 µA T J55°C -10 µA IGSSF Gate-BodyLeakage,Forward VGS 8V, V =0DS 100 nA I Gate-BodyLeakage,Reverse V =-8 V,V =0V -100 nA GSSR GS DS ONCHARACTERISTICS (Note1) V GS(th) GateThresholdVoltage VDSV , GS=-D50 µA -0.4 -0.7 -1 V TJ=125°C -0.3 -0.56 -0.7 R DS(ON) StaticDrain-SourceOn-Resistance
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MCP4151.pdf
is not rate dependent. 10: Supply current is independent of current through the resistor network. DS22060B-page 10 © 2008 Microchip Technology Inc. MCP413X/415X/423X/425X 1.1 SPI Mode Timing Waveforms and Requirements VIHH VIH VIH CS V IL 84 70 72 SCK 83 71 79 78 80 SDO MSb BIT6 - - - - - -1 LSb 75,
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MGA-62563__AV02-1237EN_.pdf
°C, T =25°C,Z =50Ω,V =5V,I =40mA C O d ds Freq Fmin Γ opt Γ opt Rn/50 NF@50Ω 30 GHz dB Mag. Ang. dB 25 0.5 0.75 0.05 89.7 0.1 0.75 1 0.67 0.06 157.9 0.08 0.67 ) 20 1.5 0.78 0.1 174 0.07 0.79 d 2 0.87 0.13 147.1 0.08 0.9 G 15 M 2.5 0.95 0.15
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4412f.pdf
VIN= 28V A 3.6V ≤ IN≤ 28V V V ( ( 20 VIN = 28V ( 20 N 1.0 F T R V VR U VIN= 2.5V C 18–50 –25 0 25 50 75 100 125 18–50 –25 0 25 50 75 100 125 0.95–50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 4412 G01 4412 G02 4412 G03 ILEAK vs Temperature V G(ON) vs Temperature V G(OFF)
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AL5801.pdf
rating for extended periods may reduce device reliability. AL5801 2 of 11 July 2012 Document number: DS35555 Rev. 3 - 2 www.diodes.com © Diodes Incorporated AL5801 Package Thermal Data Characteristic Symbol Value Unit Power Dissipation (Note 5) @AT = +25°C 0.75 Power Dissipation (Note 6) @AT = +25°C P
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BTB16-600C.pdf
2.5 Zth(j-a) 2.0 1E-1 1.5 1.0 0.5 tP( s) TC(°C) 1E-2 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0 25 50 75 100 125 DS2115 - Rev 12 page 4/16 BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics (curves) Figure 6. Surge peak on-state current versus number of Figure 5. On-state characteristics (maximum
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lg_flatron_l1800p_lb886f_ch_cl-29.pdf
7 49.5 75Hz V + 75.0 625 600 1 3 21 H + 53.674 1048 800 32 64 152 800x600 8 56.25 85Hz V + 85.061 631 600 1 3 27 H +/– 49.725 1152 832 32 64 224 832x624 9 57.283 V +/– 74.55 667 624 1 3 39 75Hz H – 48.363 1344
in „Überspannung in Mehrparteien-Wohunung. Baustrom, oder Kabel angebohrt?“ · Haus & Smart Home ·
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MCP9501-2-3-4.pdf
output hysteresis.Either 2°C (HYST = GND) or 10°C (HYST = V ) of typical hysteresis can be selected. DD DS22268A-page 6 © 2011 Microchip Technology Inc. MCP9501/2/3/4 NOTES: © 2011 Microchip Technology Inc. DS22268A-page 7 MCP9501/2/3/4 4.0 FUNCTIONAL DESCRIPTION The MCP9501/2/3/4 temperature switch family
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DS_K4B4G1646D-BC_I_P_Rev102.pdf
and Hold Base-Values [ps] reference DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 DDR3-2133 NOTE tDS(base) AC175 V (AC) SR=1V/ns 75 25 - - - - 2 IH/L tDS(base) AC150 VIH/L(AC) SR=1V/ns 125 75 30 10 - - 2 tDS(base) AC135 VIH/L(AC) SR=1V/ns 165 115 60 40 - - 2,3 tDS(base) AC135 V (AC) SR=2V/ns - - - -
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irf3205.pdf
60 Pulse Width ≤ 1 µs i Duty Factor ≤ 0.1 % r D , 40 ID Fig 10a. Switching Time Test Circuit 20 V DS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) C 10% VGS Fig 9. Maximum Drain Current Vs. d(on) r d(off)f Case Temperature Fig 10b. Switching Time Waveforms 1 ) C D = 0.50 J t ( 0.20 s n p
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MCP4261-DigitalPot-2Fach-50kDATASHEET.pdf
50 — ns CS Active (ILor IHH) Note 1: This specification by design. © 2008 Microchip Technology Inc. DS22059B-page 11 MCP414X/416X/424X/426X VIHH VIH VIH 82 CS VIL 84 70 SCK 83 71 72 80 SDO MSb BIT6 - - - - - -1 LSb 75, 76 77 73 SDI MSb IN BIT6 - - - -1 LSb IN 74 FIGURE 1-2: SPI Timing Waveform (Mode =
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IXFB100N50P_NMOS_TO-264_500_V_100_A.pdf
Applications IDSS VDS = VDSS, GS= 0V 25 A T = 125C 2 mA J R V = 10V, I = 0.5 • I , Note 1 49 m DS(on) GS D DSS © 2015 IXYS CORPORATION, All Rights Reserved DS99496F(2/15) IXFB100N50P Symbol Test Conditions Characteristic Values PLUS264 TM(IXFB) Outline (TJ= 25C Unless Otherwise Specified) Min. Typ. Max. g V = 20V, I = 50A, Note 1 50 80 S fs DS D C 20 nF iss C V = 0V, V = 25V, f = 1MHz 1700 pF oss GS DS C 140 pF rss t 36 ns d(on) Resistive Switching Times tr 29 ns t V GS = 10V, V DS= 0.5 • VDSS, D = 0.5 • DSS 110 ns d(off) R G = 1 (External
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pl2303.pdf
Release Date: July, 2002 ds_pl2303_v14 Revision History Revision Description Date 1.4 • Add Windows CE .NET support feature August 29, 2002 1.3 • Buffer for upstream and downstream data flow – August 01, 2002 change from 96 to
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infineon-irf1010e-mosfet.pdf
Temperature www.irf.com 3 IRF1010E 6000 20 VGS = 0V, f = 1 MHZ D = 50A C = C + C , C SHORTED iss gs gd ds V V DS= 48V 5000 Crss= Cgd ( 16 V DS= 30V C = C + C g V DS= 12V oss ds gd l F4000 Ciss o ( V c c 12 t u c3000 o p Coss o a - 8 ,2000 t C G , S 4 1000 Crss VG FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100
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OZ965.pdf
oC/W Operating junction temp. 150 C Storage temp. -55 C to 150 C RECOMMENDED OPERATING RANGE VDD 4.75 V to 5.5V * Fosc 30 KHz to 200 KHz Rosc 50 k to 150 k * The VDD range can be extended to 4.5V – 5.5V with all parameters within specification except the shut down function which may not work. OZ965-DS
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2243913.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 2008-2013 Microchip Technology Inc. DS22107B-page 75 MCP454X/456X/464X/466X NOTES: DS22107B-page 76 2008-2013
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22107B-1180063.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 2008-2013 Microchip Technology Inc. DS22107B-page 75 MCP454X/456X/464X/466X NOTES: DS22107B-page 76 2008-2013
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2243913.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 2008-2013 Microchip Technology Inc. DS22107B-page 75 MCP454X/456X/464X/466X NOTES: DS22107B-page 76 2008-2013
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2243913.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 2008-2013 Microchip Technology Inc. DS22107B-page 75 MCP454X/456X/464X/466X NOTES: DS22107B-page 76 2008-2013
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Infineon-IPA50R190CE-DS-v02_04-EN.pdf
] 10 V o 0.5 o 0.3 typ S S DR R 0.4 0.2 0.3 0.1 0.2 0.0 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150 175 D [A] Tj[°C] R DS(on)f(D ); j=125 °C; parameter: V GS RDS(on)f(Tj; D =6.2 A; VGS13 V Final Data Sheet 7 Rev. 2.4, 2016-07-12 500V CoolMOSª CE Power Transistor IPA50R190CE Typ. transfer
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NTS4409N-D.pdf
NTS4409N, NVS4409N MOSFET – Single, N-Channel, Small Signal, ESD Protection, SC-70/SOT-323 25 V, 0.75 A http://onsemi.com Features V(BR)DSS R DS(on)yp IDMax • Advance Planar Technology for Fast Switching, Low R DS(on) 249 mW @ 4.5 V 25 V 0.75 A • Higher Efficiency Extending Battery Life 299 mW @ 2.7
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schematic.pdf
A B C D E +1.2V +2.5V U1A 35 U1M 36 U1K +3.3V U1J +2.5V +3.3V 1 DS_C 37 VCCA1 GNDA1 139 9 R10 4.7k DSEN4 IO_1 2 DS_G VCCD_PLL1 VCCIO8 130 nSTATUS 14 R11 4.7k DSEN3 IO_2 3 DS_DP 107 108 VCCIO8 nCONFIG 92 R9 4.7k 4 7 3 9 DSEN2 1 IO_3 6 EPCS_ASDI 109 VCCA2 GNDA2 122 CONF_DONE
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Cyclone4_schematic_v200.pdf
A B C D E +1.2V +2.5V U1A 35 U1M 36 U1K +3.3V U1J +2.5V +3.3V 1 DS_C 37 VCCA1 GNDA1 139 9 R10 4.7k DSEN4 IO_1 2 DS_G VCCD_PLL1 VCCIO8 130 nSTATUS 14 R11 4.7k DSEN3 IO_2 3 DS_DP 107 108 VCCIO8 nCONFIG 92 R9 4.7k 4 7 3 9 DSEN2 1 IO_3 6 EPCS_ASDI 109 VCCA2 GNDA2 122 CONF_DONE
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PDF
schematic_v200.pdf
A B C D E +1.2V +2.5V U1A 35 U1M 36 U1K +3.3V U1J +2.5V +3.3V 1 DS_C 37 VCCA1 GNDA1 139 9 R10 4.7k DSEN4 IO_1 2 DS_G VCCD_PLL1 VCCIO8 130 nSTATUS 14 R11 4.7k DSEN3 IO_2 3 DS_DP 107 108 VCCIO8 nCONFIG 92 R9 4.7k 4 7 3 9 DSEN2 1 IO_3 6 EPCS_ASDI 109 VCCA2 GNDA2 122 CONF_DONE
in „Board EP4CE6E22C8N Altera mit Quartus2 13 ansprechen“ · FPGA, VHDL & Co. ·
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PDF
usblc6-2.pdf
C] 100 VBUS = 5 V -5.00 -10.00 10 -15.00 F(Hz) Tj(°C) -20.00 100.0k 1.0M 10.0M 100.0M 1.0G 1 25 50 75 100 125 150 DS4260 - Rev 7 page 3/20 USBLC6-2 Technical information 2 Technical information 2.1 Surge protection The USBLC6-2 is particularly optimized to perform surge protection based on the rail to
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DS_IRFB7430.pdf
Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 150 ––– ––– S V = 10V, I = 100A DS D Qg Total Gate Charge ––– 300 460 nC D = 100A Q Gate-to-Source Charge ––– 77 ––– V =20V gs DS Qgd Gate-to-Drain ("Miller") Charge ––– 98 ––– VGS= 10V g Q Total Gate Charge Sync. (Q - Q ) ––– 202 –––
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NVMFS4C03N.pdf
t 14 d(ON) Rise Time t 32 r V GS= 4.5 V, DS= 15 V,DI = 15 A, Turn−Off Delay Time t R G = 3.0 W 27 ns d(OFF) Fall Time t 17 f DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25°C 0.75 1.1 SD V GS= 0 V, J S = 10 A V TJ= 125°C 0.6
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Relay-driver_DRDNB21D.pdf
specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V (BR)R 75 V R = 10µA 0.62 0.72 F = 5.0mA 0.855 I = 10mA Forward Voltage VF V F 1.0 F = 100mA 1.25 F = 150mA 2.5 µA VR= 75V 50 µA VR= 75V, TJ= 150°C Reverse Current (Note 7) IR 30 µA V = 25V, T = 150°
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MTP12P10_D-.pdf
onsemi.com 2 MTP12P10 TYPICAL ELECTRICAL CHARACTERISTICS D 20 I 1.2 VGS = −20 V 10 V A 18 M V = V ) O DS GS P 16 TJ= 25°C ( 1.1 D = 1 mA M 8 V E ( 14 A N L R 12 V 1 R 10 7 V L C O I 8 S 0.9 R 6 V R , 6 T ID E − 4 5 V A 0.8 , 2 t 0 S 0 1 2 3 4 5 6 7 8 9 10 VG −50 −25 0 25 50 75 100 125 150 −V DSDRAIN−TO−
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PDF
Infineon-IRLIB9343-DS-v01_02-EN.pdf
0.1 0.1 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 100.0 2.0 c D = -14A ) T J 25°C a V = -10V T = 175°C i GS t J e n R r n 1.5 u 10.0 O ) e r d r u i u S a S t r t n o n
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AP3031.pdf
vs. Output Current Efficiency vs. Input Voltage 90 95 85 90 80 85 ) 75 ) 80 ( ( y 70 y n n 75 i i f 65 f 70 E E 60 65 o o 55 VIN5V, V OUT10V, T =A25 C 60 VOUT=10V, I OUT260mA,T =+A5 C C =10 F, C =0.47 F, L=4.7 H C =10 F, C =0.47 F, L=4.7 H 50 IN OUT 55 IN OUT 45 50
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Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
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IRLML2502.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
vt6k1.pdf
100000 100000 VGS 1.8V V GS1.5V VGS 1.2V T Pulsed Ta= 125°C T Pulsed Ta= 125°C T Pulsed Ta= 125°C A Ta= 75°C A Ta= 75°C A Ta= 75°C S ] T = 25°C S ] T = 25°C S ] T = 25°C N m a N m a N m a O n10000 Ta= - 25°C O n10000 Ta= - 25°C O )n0000 Ta= - 25°C E S E S E (S C D C R C RD R : R : R : O E O E O E - C - C
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Datenblatt.pdf
Voltage VGS(TH) V GS = VDS DI = 250µA (Figure 10) 2 - 4 V o Zero Gate Voltage Drain Current IDSS V DS = 60V, TC= 25 C - - 1 µA V GS = 0V o TC= 150 C - - 50 µA Gate to Source Leakage Current I V = ±20V - - ±100 nA GSS GS Drain to Source On Resistance r I = 50A, V = 10V (Figures 9) - - 0.022 Ω DS(ON) D
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IRF3205.pdf
–– ––– 8.0 mΩ VGS = 10V,DI = 62AVR V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 44 ––– ––– S VDS = 25V,DI = 62AR ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
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irf3205.pdf
–– ––– 8.0 mΩ VGS = 10V,DI = 62AVR V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 44 ––– ––– S VDS = 25V,DI = 62AR ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
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APM2095.pdf
Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BVDSS Voltage V GS=0V , DS=-250µA -20 V Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.5 -0.7 -1 V I Gate Leakage Current V =±10V , V =0V ±100 nA GSS GS DS a Drain-Source
in „Ersatztyp P-Kanal MosFet APM2095P low gate voltage“ · Mikrocontroller und Digitale Elektronik ·
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IRF4905.pdf
On-Resistance Vs.Temperature IRF4905 7000 V = 0V, f = 1MHz 20 I = -38A C GS = C + C , C SHORTED D iss gs gd ds ) 6000 C rss= C gd ( ▯VDS = -44V C oss= C ds+ C gd e16 V = -28V ) a DS F 5000 o ( C▯iss V c e12 n 4000 r i C▯ o a oss - p 3000 t C t 8 , a C 2000 G Crss ,S G4 1000 - FOR TEST CIRCUIT▯ 0 A 0 SEE FIGURE
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VMM1500-0075P.pdf
Dual Power VMM 1500-0075P V DSS = 75 V ID25 = 1500 A MOSFET Module R DS(on) = 0.55 m Ω Phaseleg Configuration Preliminary data 3 8 9 1 11 10 2 MOSFET T1 + T2 Features Trench MOSFETs Symbol Conditions Maximum Ratings – low R DSon – optimized
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FQ44N10F.pdf
) Static Drain-Source On-Resistance VGS = 10 V,DI = 21.75 A -- 0.03 0.039 Ω g Forward Transconductance V = 40 V, I = 21.75 A (Note 4) -- 30 -- S FS DS D Dynamic Characteristics C iss Input Capacitance VDS = 25 V, GS = 0 V, -- 1400 1800 pF f = 1.0 MHz C oss
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NDS355AN.pdf
. 5 1.2 V DS= 5.0V E A L.1 VDS = VGS )4 O I = 250µA ( E V D T I L 1 E A O R3 M SH U R E C N H.9 I2 h T R V E D T = -55°C R.8 ,D J U I1 25°C S E.7 125°C T G 0 0.6 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150
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irf_1404.pdf
ID= 95A C iss= Cgs + Cgd ,Cds SHORTED C rss= Cgd V VDS = 32V 10000 C oss= Cds + Cgd ( 16 V = 20V g DS ) l p 8000 C o e iss V c c 12 t u c 6000 o p o a - 8 , 4000 t C Coss G , S 4 2000 VG Crss FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 40 80 120 160 200 240 V DS , Drain-to-Source Voltage (V) Q G Total
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0900766b81524b17.pdf
( 100 P 300 IC 80 o t t e i 200 r 60 s C i r r t 40 t e e 100 o o C 20 C 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Typical Transfer Characteristics 1000 180 V = 10 V CE ) PW ) 150 Pulse Test (
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MCP6V11U_OpAmp.pdf
4 n t 3 c10% O VDD– OH e 2 V – V P 5% 1 VDD= 1.6V OL SS 0% 0 1 1 1 2 2 2 2 2 3 3 3 -50 -25 0 25 50 75 100 125 1 1 1 1 1 1 1 1 1 1 1 Ambient Temperature (°C) POR Trip Voltage (V) FIGURE 2-20: Output Voltage Headroom FIGURE 2-23: Power-on Reset Trip vs. Ambient Temperature. Voltage. DS20005124B-page 10
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DS1643-DS1643P.pdf
AS 0 0 ns 4 WE Pulse Width WEW 65 70 ns 4 CE Pulse Width tCEW 70 75 ns 4 CE2 Pulse Width CE2W 75 85 ns 4 Data Setup Time DS 35 40 ns 4 Data Hold Time tDH 0 0 ns 4 Address Hold Time tAH 5 5 ns 4 t 30 35 ns 4 WE Data Off Time WEZ Write Recovery Time tWR 5 5 ns 4 9 of 17
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A100_IRF3415_IF.pdf
VsT pemueratyre IRF3415PbF 6000 V = 0V, f = 1MHz 20 I = 22A CGS = C + C C SHORTED D Ciss= Cgs gd , ds ) V DS = 120V 5000 rss gd ( V DS = 75V Coss= Cds + Cgd e 16 V DS = 30V ) a p o ( 4000 V c e 12 a Ciss u c 3000 o a - a - 8 C t C 2000 Coss a , Crss S 4 1000 G V FOR TEST CIRCUIT 0 SEE FIGURE 13 1 10
in „Suche IR 513H“ · Analoge Elektronik und Schaltungstechnik ·