equation. In parallel to each of them there are additional leakage currents: −V IL = ILK · 1 − exp φ (11.331) LK ∂I L IL −V G L = ∂V = φ · exp φ (11.332) LK LK 166 The non-linear gate-source and gate-drain charges and capacitances are modeled with the following equations. Q GG = 2·Q GS = 2·Q GD = Q gl +tQ
.................................................................................................. 331 The Microchip Web Site..................................................................................................................................................................... 337 Customer
