-
PDF
si1551dl.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FDP060AN08A0.pdf
Typ Max Unit / F D Off Characteristics B BVDSS Drain to Source Breakdown Voltage D = 250µA, GS = 0V 75 - - V 0 6 I Zero Gate Voltage Drain Current V DS = 60V - - 1 µA A DSS V GS= 0V TC= 150 C - - 250 N 0 IGSS Gate to Source Leakage Current V GS= ±20V - - ±100 nA 8 A On Characteristics 0 — VGS(TH) Gate
in „Simulation IR2183 Halbbrückentreiber“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
R3112x_SERIES_Ricoh.pdf
E1.34 h V -VDET h V e 0.90 e 1.32 -VDET h h 1.30 T T t 0.88 t 1.28 e e e 0.86 e 1.26 D -50 -25 0 25 50 75 100 D -50 -25 0 25 50 75 100 Temperature Topt(°C) Temperature Topt(°C) 13 R3112x R3112x271x R3112x451x e e t 2.90 t 4.75 o o +VDET V 2.85 +V DET V 4.70 e e s s 4.65 l 2.80 l e V e V 4.60 / T 2.75 / T
in „IC von Tiefentladungsschutz identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
dm9161-ds-f05_091008.pdf
AGND AVDD 1 0.1µ F 4 50Ω 0.1µ F DM9161 1% AGND 5 7 AGND 1:1 TX+ 2 50Ω 3.3V AVCC 7 1% TX- 8 8 0.1µ F 75Ω BGRESG 47 75Ω 1% 75Ω AGND 1% 75Ω 1% BGRES 48 6.8KΩ, 1% 1% 0.1µ F/2KV or 0.01µ F/2KV Chasis GND Figure10-1 42 Final Version: DM9161-DS-F05 September 10, 2008 DM9161 10/100MbpsFastEthernetPhysicalLayer
in „Beschaltung VICOM DM9161CEP“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
BLF188XR_BLF188XRS.pdf
industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 2 to 30 50 1270 29.0 75 27 50 1400 23.7 73 41 50 1200 22.0 82 60 48 1240 22.0 77 72.5 50 1350 23.1 83 81.4 50 1200 27.1 77.8 88 to 108 50 1320 22.5 85 108 50 1200 26.5
-
PDF
DS-000021-v1.22.pdf
100°C (TSMIN) Preheat Minimum Temperature 150°C 200°C (TSMIN) Time (T SMIN to TSMAX), S 60 sec to 75 sec 60 sec to 75 sec Ramp-Up Rate (T SMAX to TL) 1.25°C/sec 1.25°C/sec Time Maintained Above Liquidous (t ) L 45 sec to 75 sec ~50 sec Liquidous Temperature (T ) L 183°C 217°C Peak Temperature (T ) P
in „Analog MEMS Mikrofon am Mikrocontroller“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
RJH60F5DPQ.pdf
a l 6 S V e 1.6 40 A f i t 1 mA m C 4 E 1.4 20 A r t i o m 2 c 1.2 E l t o e 0 C 1.0 a −25 0 25 50 75 100 125 150 −25 0 25 50 75 100 125 150 G Junction Temparature Tj (°C) Junction Temparature Tj (°C) R07DS0326EJ0200 Rev.2.00 Page 3 of 7 Jul 22, 2011 RJH60F5DPQ-A0 Preliminary Typical Capacitance vs.
in „Inverter Elektroden-Schweißgerät abgeraucht -> IGBT defekt“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
csd18502kcs.pdf
BVDSS Drain to Source Voltage VGS = 0V,DI = 250μA 40 V DSS Drain to Source Leakage Current VGS = 0V, DS = 32V 1 μA I Gate to Source Leakage Current V = 0V, V = 20V 100 nA GSS DS GS VGS(th) Gate to Source Threshold Voltage VDS= V GS,DI = 250μA 1.5 1.8 2.1 V VGS = 4.5V,DI = 100A 3.3 4.3 mΩ RDS(on) Drain
in „Netzteil: 2 Mosfets parallel OK?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
ART2K0FE_2K0FES_2K0FEG.pdf
drain-source breakdown voltage V GS = 0 V; D = 5.5 mA 203 208 - V V GS(th) gate-source threshold voltage V DS = 20 V; D = 550 mA 1.5 2.1 2.5 V I drain leakage current V = 0 V; V = 65 V - - 2.8 A DSS GS DS IDSX drain cut-off current V GS = VGS(th)+ 3.75 V; - 77 - A V = 20 V DS IGSS gate leakage current V GS = 13 V; VDS = 0 V - - 280 nA R DS(on) drain-source on-state resistance V GS = VGS(th)+ 3.75 V; - 0.100 - I = 19.25 A D Table 7. AC characteristics Tj= 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ
-
PDF
mdlm7301.pdf
otherwise specified Supply Current vs VOS vs VOS vs V CM Supply Voltage Supply Voltage V = ± 1.1V S DS012842-3 DS012842-4 DS012842-5 V OS vs VCM VOS vs VCM Inverting Input, V = ± 2.5V V = ± 15V S S Bias Current vs Common Mode Voltage V = ± 1.1V S DS012842-6 DS012842-7 DS012842-8 5 www.national.com = =
in „Problem mit OP als Spannungsfolger vor ADC“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
162399-da-01-en-IRF_4905.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF4905_TO220.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „FET Frage (n oder p)“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
ZLDO1117.pdf
J o A30 D I 1 20 0.9 10 0.8 0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Drop-Out Voltage vs. Temperature Adjust Pin Input Current 5 of 14 ZLDO1117 July 2012 Document number: DS32018 Rev. 6 - 2 www.diodes.com
in „Def. Mikrocontroller auf Geschirrspüler-Platine?“ · Haus & Smart Home ·
-
PDF
PMV15UNEA.pdf
250 µA; V GS = 0 V; Tj= 25 °C 20 - - V breakdown voltage VGSth gate-source threshold ID= 250 µA; V DS = V GS; j = 25 °C 0.4 0.65 0.9 V voltage I drain leakage current V = 20 V; V = 0 V; T = 25 °C - - 1 µA DSS DS GS j GSS gate leakage current V GS = 8 V; VDS = 0 V; j = 25 °C - - 10 µA V GS = -8 V; DS
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP6562.pdf
Avg. = 44.6 ns u20% u20% StDev= 2.7 ns c c 198 units O O 10% 10% 0% 0% 30 35 40 45 50 55 60 65 70 75 80 30 35 40 45 50 55 60 65 70 75 80 Prop. Delay (ns) Prop. Delay (ns) FIGURE 2-21: Low-to-High and High-to- FIGURE 2-24: Low-to-High and High-to- Low Propagation Delays. Low Propagation Delays . DS22139B-page
in „Schmitttrigger mit MCP6562 unklare Abweichung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LM1086.pdf
-43 DS100948-44 Ripple Rejection vs. Frequency (LM1086-5) Ripple Rejection vs. Output Current (LM1086-5) DS100948-46 DS100948-45 Line Transient Response Load Transient Response DS100948-47 DS100948-48 7 www.national.com
in „Spannungsregler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BUZ11.pdf
BUZ11 ∪ N - CHANNEL 50V - 0.03 - 33A TO-220 STripFET∧ MOSFET TYPE VDSS R DS(on) ID BUZ11 50 V < 0.04 33 A TYPICAL R DS(on)= 0.03 AVALANCHERUGGED TECHNOLOGY 100%AVALANCHE TESTED HIGH CURRENT CAPABILITY 175 C OPERATINGTEMPERATURE 23 1 APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED
in „Transistorschalter für Glühlampe 12V 5W“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
P5504EDG.pdf
250µA V Gate Threshold Voltage V GS(th) VDS = VGS ID= -250µA -1 -1.5 -2.5 Gate-Body Leakage IGSS V DS= 0V, VGS = ±20V ±250 nA V = -32V, V = 0V 1 Zero Gate Voltage Drain Current I DS GS DSS V = -30V, V = 0V, T = 125 °C 10 µA DS GS J 1 On-State Drain Current D(ON) V DS= -5V, VGS = -10V -32 A AUG-19-2004
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Mosfet_-_ti_-_csd19536kcs_TO220.pdf
c l 2.5 t 7 V i d 2.3 e 6 o R s 2.1 t 5 r t T 1.9 - 4 - 1.7 O 3 ( - G 1.5 n 2 V S 1.3 D 1 R 1.1 0 −75 −50 −25 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16 18 20 T - Case Temperature (ºC) V - Gate-to- Source Voltage (V) C G001 GS G001 Figure 6. Threshold Voltage vs Temperature Figure 7. On-State
in „MOSFET CSD19536KCS“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
FQPF6N90C.pdf
Test Circuit & Waveform 6 N 9 0 C / F V GS Q Same Type P 50KΩ as DUT F 12V 200nF Q g 6 300nF 10V N V DS 9 VGS Q gs Qgd C DUT 3mA Charge Resistive Switching Test Circuit & Waveforms R V L V DS 90% DS V V GS DD R G 10% V GS 10V DUT t t t d(on) r d(offf ton toff Unclamped Inductive Switching Test Circuit & Waveforms L BV DSS EAS = ---LI AS -------------------- V DS 2 BV DSS - DD BV DSS ID AS R G V DD ID(t) 10V DUT VDD V DS(t) t p tp Time ©2003 Fairchild Semiconductor Corporation Rev. A, April 2003 F Q P 6 Peak Diode Recovery dv/dt Test Circuit & Waveforms N 9 C
in „Suche MOSFET und passenden Treiber mit galvanischer Trennung für Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF3708PBF.pdf
Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % i r 30 D , Fig 10a. Switching Time Test Circuit I 20 V DS 10 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS d(on) tr td(off)f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 )C h t ( 1 D = 0.50 e n
in „Transistor zum Schalten von 24V/12V“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF3708_IR__1_.pdf
Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % i r 30 D , Fig 10a. Switching Time Test Circuit I 20 V DS 10 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS d(on) tr td(off)f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 )C h t ( 1 D = 0.50 e n
in „Mosfet Treiberschaltung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF3708_IR__1_.pdf
Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % i r 30 D , Fig 10a. Switching Time Test Circuit I 20 V DS 10 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS d(on) tr td(off)f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 )C h t ( 1 D = 0.50 e n
in „24V-Ausgang potentialgetrennt aus einem STM32 3,3V“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
BS108_GS.pdf
DSS 240 250 – V atDI = 100 A, GS= 0 Gate-Body Leakage Current IGSS – – 10 nA at V = 15 V, V = 0 GS DS Drain Cutoff Current at DS = 130 V,GS = 0 IDSS – – 1 A at DS = 70 V,GS = 0.2 V IDSX – – 25 A Gate-Source Threshold Voltage VGS(th) 0.8 1.5 2.5 V at GS = VDS DI = 1 mA Drain-Source ON Resistance R – 5.5 8 DS(ON) at GS = 2.8 VD I = 100 mA 1) Thermal Resistance Junction to Ambient Air RthJA – – 150 K/W Capacitance at DS = 20 V,GS = 0, f = 1 MHz Input Capacitance C iSS – 80 – pF Output Capacitance C – 20 –
in „Wär ganz toll wenn sich einer von euch mal meinen Schaltplan ansehen würde“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF4905.pdf
On-Resistance Vs.Temperature IRF4905PbF 7000 V = 0V, f = 1MHz 20 I = -38A CGS = C + C , C SHORTED D iss gs gd ds ) 6000 Crss = Cgd ( V DS = -44V Coss = Cds + Cgd e16 V = -28V ) a DS F 5000 o ( C iss V c e12 n 4000 r i C o a oss - p 3000 t C t 8 , a C 2000 G C rss ,S G4 1000 - FOR TEST CIRCUIT 0 A 0 SEE FIGURE 13
in „Frage zu Push Pull Abwärtswandler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
ZXLD1366.pdf
Deviation, L = 68µH 100 1 LED 95 3 LEDs 5 LEDs 90 7 LEDs 9 LEDs 11 LEDs )85 13 LEDs ( 15 LEDs Y80 C N75 I F F70 E 65 60 55 500 10 20 30 40 50 60 SUPPLY VOLTAGE (V) Efficiency, L = 68µH ZXLD1366 7 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line
in „Spannungsteiler zwischen Arduino und KSQ“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
2097320.pdf
Deviation, L = 68µH 100 1 LED 95 3 LEDs 5 LEDs 90 7 LEDs 9 LEDs 11 LEDs )85 13 LEDs ( 15 LEDs Y80 C N75 I F F70 E 65 60 55 500 10 20 30 40 50 60 SUPPLY VOLTAGE (V) Efficiency, L = 68µH ZXLD1366 7 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line
in „ZXLD1366 Beschaltung ADJ Pin“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irfh4210pbf.pdf
250µA BV DSS/TJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C, I D 1mA R DS(on) Static Drain-to-Source On-Resistance ––– 0.85 1.10 m VGS = 10V, D = 50A ––– 1.10 1.35 VGS = 4.5V,DI = 50A V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 100µA GS(th) DS GS D V GS(th) Gate
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
-
PDF
irl7486mpbf-936689.pdf
applications V DSS 40V Battery powered circuits Half-bridge and full-bridge topologies R typ. 1.0m DS(on) Synchronous rectifier applications Resonant mode power supplies max 1.25m @ V GS = 10V OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters R DS(on)typ.
in „Reparatur Makita XWT08Z (DTW1002Z)“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MP2354DS.pdf
these ratings may damage the device. MP2354DS SOIC8 –40°C to +85°C 2) The device is not guaranteed to function outside of its For Tape & Reel, add suffix –Z (eg. MP2354DS–Z) operating conditions. *For Lead Free, add suffix –LF (eg. MP2354DS–LF–Z
in „[S] Step Down Converter MP2354DS (für Fritzbox 7170)“ · Markt ·
-
PDF
TC4420.pdf
I U 2: Exposed pad of the DFN package is electrically isolated. O 2004 Microchip Technology Inc. DS21419C-page 1 TC4420/TC4429 Functional Block Diagram VDD TC4429 Inverting 500 µA 300 mV Output TC4420 Input Non-Inverting 4.7V GND Effective Input C = 38 pF DS21419C-page 2 2004 Microchip Technology
in „Peltier-Driver Flyback-Diode“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRL1004_IR.pdf
- DD e u 80 4.5V C i Duty Factor ≤ 0.1 % r 60 D , ID 40 Fig 10a. Switching Time Test Circuit 20 V DS 90% 0 25 50 75 100 125 150 175 ° T C Case Temperature ( C) 10% V GS Fig 9. Maximum Drain Current Vs. t t t t CaseTemperature d(on) r d(off)f Fig 10b. Switching Time Waveforms 1 ) C D = 0.50 t Z ( s 0.20
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRL1004_IR.pdf
- DD e u 80 4.5V C i Duty Factor ≤ 0.1 % r 60 D , ID 40 Fig 10a. Switching Time Test Circuit 20 V DS 90% 0 25 50 75 100 125 150 175 ° T C Case Temperature ( C) 10% V GS Fig 9. Maximum Drain Current Vs. t t t t CaseTemperature d(on) r d(off)f Fig 10b. Switching Time Waveforms 1 ) C D = 0.50 t Z ( s 0.20
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
DataDump.txt
Type:1001 Def_to_pat Id:10455A28 Class:1001 UPTOD DEF_3D 3D_FREE Ref: 56 Id:10455A44 Class:1002 UPTOD DS_CLASS_VOL_3D ======================================================================= Transformationsmatrix rel->abs 1.00 0.00 0.00 0.00 1.00 0.00 0.00 0.00 1.00 -156981954.89 82620300.75 0.00 Kennungen
-
PDF
DS1267.pdf
O/MI Figure 6 is a plot of absolute linearity and relative linearity versus wiper position for the DS1267 at 25°C. The specification for absolute linearity of the DS1267 is ±0.75 MI typical. The specification for relative linearity of the DS1267 is ±0.3 MI typical. 5 of 12 102199 DS1267 LINEARITY MEASUREMENT
in „Poti mit Atmega8 ersetzen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irf3708.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A QT High Frequency Buck Converters for Computer Processor Power Benefits Q Ultra-Low Gate Impedance Q Very Low R DS(on)t 4.5V V GS 2 Q Fully Characterized Avalanche
in „IRF3708 als Schalter“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DMP10H400SEQ-838150.pdf
Voltage Drain Current DSS 1 µA VDS = -80V, GS= 0V Gate-Source Leakage GSS ±100 nA VGS = ±20V, DS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.0 -2.2 -3.0 V V = V , I = -250µA GS(TH) DS GS D 203 250 VGS = -10V,DI = -5A Static Drain-Source On-Resistance R DS(ON) 241 300 m VGS
in „Externe Festplatte durch falsches Netzteil zerstört“ · PC Hard- und Software ·
-
PDF
BF245.pdf
MIN. TYP. MAX. UNIT VDS drain-source voltage − − ±30 V VGSoff gate-source cut-off voltage D = 10 nA; DS= 15 V −0.25 − −8 V VGSO gate-source voltage open drain − − −30 V I drain current V = 15 V; V = 0 DSS DS GS BF245A 2 − 6.5 mA BF245B 6 − 15 mA BF245C 12 − 25 mA Ptot total power dissipation Tamb= 75 °
in „Vorbereitung auf Klausur“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
SBR10U40CTFP.pdf
. SBR10U40CT, SBR10U40CTFP 3 of 6 April 2015 Document number: DS30951 Rev. 8 - 2 www.diodes.com © Diodes Incorporated SBR10U40CT, SBR10U40CTFP Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. P °
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
ZXM61N02F.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss
in „74LS109 Toggelt nicht“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
nFET_ZXM61N02FTA.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss
in „ESP8266 Module mit Batterie betreiben - Strom sparen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
nFET_ZXM61N02FTA.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss
in „Wellenlänge Infrarot Leuchtdiode?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
nFET_ZXM61N02FTA.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss
in „3.3V MOSFET ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
nFET_ZXM61N02FTA-1.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss
in „ATtiny13A: ESP8266 ein- und ausschalten“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
nFET_ZXM61N02FTA.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
nFET_ZXM61N02FTA.pdf
Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage V 0.7 V I =250 A, V = V GS(th) D DS GS Static Drain-Source On-State Resistance R 0.18 V =4.5V, I =0.93A DS(on) GS D (1) 0.24 VGS=2.7V, ID=0.47A Forward Transconductance (3) g fs 1.3 S VDS=10V,ID=0.47A DYNAMIC (3) Input Capacitance C iss
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
AN11158_Understanding_MOSFET_data_sheet_parameters__NXP.pdf
aaa-002473 (2) IDS (3) (A) (1) 10 (5) (4) 1 10-1 1 10 102 103 VDS (V) (1) R limit (V /I is constant) DS(on) DS DS (2) Maximum pulsed drain current (IDS is constant) (3) Maximum pulsed power dissipation (V DS DS is constant) (4) Maximum allowed voltage (V DS is constant) (5) Linear mode derating - a departure
in „Flyback-Wandler Störungen auf Versorgung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
mcp6004.pdf
www.microchip.com/cn) to receive the most current information on our products. 2003 Microchip Technology Inc. DS21733D-page 21 MCP6001/2/4 NOTES: DS21733D-page 22 2003 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification
in „Nichtinvertierender Operationsverstärker“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Spartan-3A_FPGA_Family.pdf
0.5 VREF + 0.5 50 0.9 VREF SSTL18_II 0.9 V – 0.5 V + 0.5 25 0.9 V REF REF REF SSTL2_I 1.25 VREF – 0.75 VREF + 0.75 50 1.25 VREF SSTL2_II 1.25 VREF – 0.75 VREF + 0.75 25 1.25 VREF SSTL3_I 1.5 VREF – 0.75 VREF + 0.75 50 1.5 VREF SSTL3_II 1.5 VREF – 0.75 VREF + 0.75 25 1.5 VREF 36 www.xilinx.com DS529-3
in „Ultraschallgerät(Medizin) HMI Touch Vertikale Streifen“ · FPGA, VHDL & Co. ·
-
PDF
DS_SJDP120R085_rev1.3.pdf
Parameter Symbol Conditions Unit Min Typ Max Off Characteristics Drain-Source Blocking Voltage BV DS VGS = -15 V, D = 600 µA 1200 - - V V DS= 1200 V, V GS < -15 V, - 10 - Tj = 25 C Total Drain Leakage Current DSS µA V DS= 1200 V, V GS < -15 V, Tj= 150 C - 100 - VGS = -15 V, VDS = 0V - -0.1 -0.3 Total
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·