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PDF
AO4410.pdf
Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to V DS(V) = 30V provide excellent DS(ON) shoot-through immunity, ID= 18A (VGS = 10V) body diode characteristics and ultra-low gate R DS(ON) 5.5mΩ (V GS= 10V) resistance. This device is ideally suited for use
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AO3404A.pdf
Transistor General Description Features The AO3404A uses advanced trench technology to V (V) = 30V DS provide excellent DS(ON)and low gate charge. This D = 5.8A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)< 25m (VGS = 10V) applications. R < 35m (V = 4.5V) DS(ON) GS SOT23
in „unbekante SMD code (Fujitsu Esprimo X913T Motherboard D3204)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LED.pdf
4010 NSSL100T Sel.f1T LED, SMD, warm-weiß, 105/110° Nichia 2500 / Gurt 2.500 219733 8541 4010 LEMWS59T75FZ00 LED, SMD, weiß, typ. 6530 K, 150 mA, typ. 48 lm, CRI 75, 124° LG Innotek 3000 / Gurt 2.500 322101 8541 4010 NSPL500DST Sel. d1U LED, 5mm, warm-weiss, 15° Nichia 2500 / Ammo 2.350 328721 8541 4010
in „[V] Großer Posten SMD und THT LEDs günstig abzugeben“ · Markt ·
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PDF
DG211_70040.pdf
Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . .c. .Derate 6.5 mW/_C above 75_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_Cve 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S X V L Level V– Shift/ Drive V+ INX D X GND V–
in „Integrator resetten, bzw. ersatz für SD211“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DG212_Siliconix.pdf
Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . .c. .Derate 6.5 mW/_C above 75_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_Cve 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S X V L Level V– Shift/ Drive V+ INX D X GND V–
in „Analogschalter mit Logikpegel-Shifter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
0754-200.pdf
Current Sensor: ACS754SCB-200 TheAllegroACS75x family of current sensors provides economical and 5 precise solutions for current sensing in industrial, automotive, commercial, and 4 communications systems. The device package allows for easy implementation
in „Strom 10A bis 300A messen mit Tiny26“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6344pbf.pdf
PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 12 V G 1 R DS(on) max 29 mΩ 3 D (@V GS = 4.5V) TM R DS(on) max S 2 Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits
in „LEDs: Konstantstrom-Multiplexing. Schaltung & Teile so ok?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APT34F100B2_L_D-1593638.pdf
1.5 C J S N 60 O A - 1.0 R TJ= 25°C I D 40 A ID R TJ= 125°C ,) 0.5 20 N ( D 0 0 R -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 T , JUNCTION TEMPERATURE (°C) V , GATE-TO-SOURCE VOLTAGE (V) J GS Figure 3, DS(ON)vs Junction Temperature Figure 4, Transfer Characteristics 50 20,000 C iss T = -55°C 10,000
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BF245abc.pdf
MIN. TYP. MAX. UNIT VDS drain-source voltage − − ±30 V VGSoff gate-source cut-off voltage D = 10 nA; DS = 15 V −0.25 − −8 V VGSO gate-source voltage open drain − − −30 V I drain current V = 15 V; V = 0 DSS DS GS BF245A 2 − 6.5 mA BF245B 6 − 15 mA BF245C 12 − 25 mA Ptot total power dissipation Tamb= 75
in „Welche Steilheit hat ein BF245C?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IXIS_24N100Q3.pdf
0V, I = 1mA 1000 V DSS GS D DC-DC Converters V V = V , I = 4mA 3.5 6.5 V Battery Chargers GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nAPower Supplies GSS GS DS I V = V , V = 0V 25 A DC Choppers DSS DS DSS GS Temperature and Lighting Controls TJ= 125
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
564746-da-01-en-MOSFET_N_KA_800V_STP4N80K5_TO_220AB_STM.pdf
current GS = 0) VDS = 800 V, TC=125 °C 50 µA Gate-body leakage IGSS current (V = 0) VGS = ± 20 V ±10 µA DS V Gate threshold voltage V = V , I = 100 µA 3 4 5 V GS(th) DS GS D Static drain-source on- RDS(on) VGS = 10 V, D = 1.5 A 2.1 2.5 Ω resistance Table 5. Dynamic Symbol Parameter Test conditions Min. Typ
in „Anodenspannungsstabilisierung für Röhrenverstärker mit IRF840 als Längsregler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS1220Y.pdf
35 ns 5 Output Hold from Address Change tOH 5 ns Write Cycle Time t 100 ns WC Write Pulse Width tWP 75 ns 3 Address Setup Time tAW 0 ns tWR1 0 ns 12 Write Recovery Time t 10 ns 13 WR2 Output High-Z from WE ODW 35 ns 5 Output Active from WE OEW 5 ns 5 Data Setup Time t 40 ns 4 DS Data Hold Time tDH1 0
in „[S] DALLAS DS1220Y-150 NVRAM (NOS)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NTD4963N-D.PDF
C ISS 1035 Output Capacitance COSS V = 0 V, f = 1.0 MHz, = 12 V 220 pF GS DS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 8.1 Threshold Gate Charge Q G(TH) 1.2 V = 4.5 V, V = 15 V, I = 30 A nC Gate−to−Source Charge Q GS GS DS D 3.5 Gate−to−Drain Charge Q GD 3.5 Total Gate Charge QG(TOT) V GS= 10 V, DS = 15 V,DI = 30 A 16.2 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time d(ON) 12 Rise Time r 20 VGS = 4.5 V,DS = 15 V, ns Turn−Off Delay Time td(OFF) ID = 15 A, G = 3.0 W 14 Fall Time f 3 5. Pulse
in „Vergleichsmosfet NTD 4963N“ · Analoge Elektronik und Schaltungstechnik ·
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DS14C232.pdf
C to +85˚C E DS14C232E/J: −55˚C to +125˚C A 2 Connection Diagram Functional Diagram 3 2 D a l D v e / R c e v r DS010744-1 Order Number DS14C232CN, DS14C232CM, or DS14C232TM See NS Package Number N16E, or M16A DS010744
in „Schnittstellentreiber IC DS14C232“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFHS8342-DataSheet-v01_01-EN.pdf
IRFHS8342PbF HEXFET Power MOSFET V 30 V TOP VIEW DS V GS max ± 20 V D R DS(on) max D 1 6 D D 16.0 mΩ D G (@V GS = 10V) D 2 D 5 D Q g(typical) 4.2 nC D (@V = 4.5V) D S GS G 3 S 4 S S I D 8.5 d A 2mm x 2mm PQFN (@T c(Bottom) 25°C) Applications • Control
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1-SPD30N06S2L-13_1-1.pdf
single pulse -4 0.02 10 0.01 10 0 10 -5 10 -1 10 0 101 V 10 2 10-7 10-6 10-5 10-4 10-3 10 -2 s 10 0 V DS p Page 4 2003-05-09 SPD30N06S2L-13 5 Typ. output characteristic 6 Typ. drain-source on resistance ID= f (V DS ); T j25°C R DS(on) = f (D ) parameter: t = p0 µs parameter: V GS 75 SPD30N06S2L-13 42 SPD30N06S2L
in „Kuehlkoerper“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MC_product_selection_AN.pdf
C 75 regulation. 0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 3 4 5 6 7 8 9 1 1 1 1 1 1 Junction Temperature (°C) FIGURE 10: Thermal Regulation. © 2007 Microchip Technology Inc. DS01088A-page 9 AN1088 CONCLUSION REFERENCES
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf4905.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 100 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V = ± 20V ±100 nA IGSS GS Current (DS = 0) ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th
in „Schaltungsfrage zu OpAmp und Stromsenke“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SMDB3.pdf
220 V C = 0.1 µF P 50 Hz Vo T410 R = 20 Ω DS2125 - Rev 3 page 3/11 DB3, DB4, SMDB3 Characteristics Figure 3. Rise time measurement p 90 % 10 % t r DS2125 - Rev 3 page 4/11 DB3, DB4, SMDB3 Characteristics (curves) 1.1 Characteristics curves Figure
in „Diac und Triac in einem Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRL3705N 100 R D LIMITED BY PACKAGE V DS V 80 GS D.U.T. ) R A G + t - DD e 60 r u 5.0V C Pulse Width ≤ 1 µs i Duty Factor ≤ 0.1 % r 40 , D Fig 10a. Switching Time Test Circuit I 20 V DS 90% 0 25 50 75 100 125 150 175 T , Case Temperature (
in „Anschluss MOSFET IRL3705N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRFP_3703.pdf
D ––– 2.8 3.9 V GS= 7.0V, D = 76A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D ––– ––– 20 µA V DS= 24V, VGS= 0V DSS Drain-to-Source Leakage Current ––– ––– 250 V DS= 24V, VGS= 0V, TJ= 150°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 V GS= 20V Gate-to-Source Reverse Leakage
in „[Projekt] Einstellbares Netzteil 12V/60A auf 0,5-2,5V/250A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRL3705N 100 R D LIMITED BY PACKAGE V DS V 80 GS D.U.T. ) R A G + t - DD e 60 r u 5.0V C Pulse Width ≤ 1 µs i Duty Factor ≤ 0.1 % r 40 , D Fig 10a. Switching Time Test Circuit I 20 V DS 90% 0 25 50 75 100 125 150 175 T , Case Temperature (
in „Ventilansteuerung mit Mosfet - Temperatur?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ips021.pdf
SWITCH Features Product Summary • Over temperature shutdown • Over current shutdown • Active clamp R ds(on) 150m Ω (max) • Low current & logic level input • E.S.D protection V clamp 50V Ishutdown 5A Description Ton /Toff 1.5µs The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that
in „Intelligenter Schalttransistor...“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ips021.pdf
SWITCH Features Product Summary • Over temperature shutdown • Over current shutdown • Active clamp R ds(on) 150m Ω (max) • Low current & logic level input • E.S.D protection V clamp 50V Ishutdown 5A Description Ton /Toff 1.5µs The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that
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PDF
datasheet.pdf
I –12 n r –3 V u–8 C i r VGS = –2.5 V D–4 0 –2 –4 –6 –8 –10 Drain to Source VoltagV DS (V) 4 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Typical Tranfer Characteristics –20 ) –16 V DS = –10 V ( Pulse Test I –12 n e u –8 C a 75 °C r Tc = 25 °C D –4 –25 °C 0 –1 –2 –3 –4 –5 Gate to Source VoltageVGS
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BLF578.pdf
specified. j Symbol Parameter Conditions Min Typ Max Unit DSX drain cut-off current V GS = VGS(th) 3.75 V; 58 70 - A V = 10 V DS GSS gate leakage current V GS = 11 V; DS = 0 V - - 280 nA RDS(on) drain-source on-state V GS = VGS(th) 3.75 V; - 0.07 - resistance ID= 16.66 A Crs feedback capacitance V GS
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PDF
stb6nk60z.pdf
drain current (V= 0) GS VDS = Max ratingC T = 125 °C 50 µA I Gate-body leakage V = ± 20 V GSS current (DS= 0) GS ±10 µA V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D RDS(on) Static drain-source on VGS = 10 V,DI = 3 A 1 1.2 Ω resistance Table 6. Dynamic Symbol Parameter Test conditions
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PDF
stb6nk60z.pdf
drain current (V= 0) GS VDS = Max ratingC T = 125 °C 50 µA I Gate-body leakage V = ± 20 V GSS current (DS= 0) GS ±10 µA V Gate threshold voltage V = V , I = 100 µA 3 3.75 4.5 V GS(th) DS GS D RDS(on) Static drain-source on VGS = 10 V,DI = 3 A 1 1.2 Ω resistance Table 6. Dynamic Symbol Parameter Test conditions
in „Unterschiedliche Power MOSFET kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HY1403-HOOYI.pdf
GSS GS DS VGS10V, I DS1A - 10 11 mΩ R DS(ON) Drain-Source On-state Resistance VGS4.5V, I DS1A 14 17 mΩ Diode Characteristics VSD * Diode Forward Voltage SD=21A, V GSV - 0.8 1.1 V trr Reverse Recovery Time - 21
in „Alternative zu beschädigtem MOSFET?“ · Analoge Elektronik und Schaltungstechnik ·
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Masterarbeit.pdf
. . . . . . . . 74 6.2 Gateschleife für den Einschalt (rot)- und den Ausschaltvorgang (blau) . . . 75 6.3 Unterseite der Platine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 7.1 ESB des Doppelpulsversuchs mit den Messgrößen i , u und u . . 77 D,2 GS,2 DS,2 7.2 Legende für den Ein- und
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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UP6281B8.pdf
VCCRTH V CCrising 4.0 4.2 4.4 V VCC POR Hysteresis VCCHYS -- 0.25 -- V Rev. F03, File Name: uP6281-DS-F0300upi-semi.com 4 Free Datasheet http://www.Datasheet4U.com uP6281 Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit PWM Input Input High Threshold PWM RTH 3.15 3.45 3.75
in „Am3 Mainboard Vcore instabil wenn kalt“ · PC Hard- und Software ·
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PDF
TC4426.pdf
(0.254mm) per side. JEDEC Equivalent: MO-187 Drawing No. C04-111 2003 Microchip Technology Inc. DS21422B-page 15 TC4426/TC4427/TC4428 NOTES: DS21422B-page 16 2003 Microchip Technology Inc. TC4426/TC4427/TC4428 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
413-11717-0-FSS237.pdf
1.8 2.0 Drain-to-Source Voltage,VDS – V Gate-to-Source Voltage,V GS – V | y fs | - I R - V 100 D 25 DS(on) GS S V DS =10V Ta=25°C 7 | 5 s m 20 y 3 C °C – , -25° 25 n c 2 Ta= C ( D =14A a 75° D 15 i e R d 10 u e A o n D =7A e 7 o i 10 s 5 - e r a R T 3 D t r i S 5 w 2 t n o S O F 1.0 0 0.1 2 3 5 7 1.0
in „Quelle oder Alternative FSS237“ · Mikrocontroller und Digitale Elektronik ·
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PDF
20002019c.pdf
2006-2016 Microchip Technology Inc. DS20002019C-page 21 MCP1406/07 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002019C-page 22 2006-2016 Microchip Technology Inc. MCP1406/07 2006-2016 Microchip Technology Inc. DS20002019C-page 23 MCP1406/07 NOTES: DS20002019C-page 24 2006-2016 Microchip Technology Inc. MCP1406/07 APPENDIX A: REVISION HISTORY Revision C (April 2016) The following is the list of modifications
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
data.pdf
SWITCH Features Product Summary • Over temperature shutdown • Over current shutdown • Active clamp R ds(on) 25m (max) • Low current & logic level input • E.S.D protection V clamp 50V Ihutdown 35A Description T T 1.5 s TheIPS0151/IPS0151Sarefullyprotectedthreeterminal on/ off SMART POWER MOSFETs that feature
in „Problem mit MOSFET-Schalter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
17484.pdf
last two digits) WW Manufacturing date code: Calendar week 9 115NortheastCutoff,Box15036 ACS754050-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000 Current Sensor: ACS754xCB-050 Package CB-PFF 10 115NortheastCutoff,Box15036 ACS754050-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000
in „Strommessung mit ACS754LCB-50-PFF Sensor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ACS754SCB100PFF.pdf
last two digits) WW Manufacturing date code: Calendar week 9 115NortheastCutoff,Box15036 ACS754100-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000 Current Sensor: ACS754xCB-100 Package CB-PFF 10 115NortheastCutoff,Box15036 ACS754100-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000
in „80A Strom messen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
current-sensor_ACS754.pdf
last two digits) WW Manufacturing date code: Calendar week 9 115NortheastCutoff,Box15036 ACS754050-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000 Current Sensor: ACS754xCB-050 Package CB-PFF 10 115NortheastCutoff,Box15036 ACS754050-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000
in „Motorsteuerung AVR Atmega per ISP flashen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1.5KE400CA.pdf
58.90 65.10 1.0 5.0 85.0 17.7 0.104 1.5KE68A 1.5KE68CA 58.10 64.60 71.40 1.0 5.0 92.0 16.3 0.104 1.5KE75A 1.5KE75CA 64.10 71.30 78.80 1.0 5.0 103.0 14.6 0.105 1.5KE82A 1.5KE82CA 70.10 77.90 86.10 1.0 5.0 113.0 13.3 0.105 1.5KE91A 1.5KE91CA 77.80 86.50 95.50 1.0 5.0 125.0 12.0 0.106 1.5KE100A 1.5KE100CA
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Bootloader230.a51
1 for ch559 or ch557 bReqError: DBIT 1 ; 1 on request Errors dseg at 0x21 ; gloabal vars wValueLo: ds 1 ; 0x21 BootKey: ds 8 ; 0x22 Marker0: ds 1 ; 0x2A rlen: ds 1 ; 0x2B reqlen: ds 1 ; 0x2C cmdbuffer: ds 64 ; 0x2D ds 2 ; 0x6d spare bRequest: ds 1 ; 0x6F SnSum: ds 1 ; 0x70 DescAddr: ds 2 ; 0x71 CAddr: ds 2 ; 0x73 Marker1: ds 1 STACK: xseg at 0 EP0_BUFFER: ds 8 ; 0x0000 the control endpoint ds 4 ; spare EP2_BUFFER: ds 64 ; 0x000C bulk out Response: ds 64 ; 0x004C bulk in cseg at StartAddress ; bootloader
in „uC für 0,20€ CH552 / CH554 von WCH Billig Micro mit USB Funktion, Chip vorstellung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OV528_DS_1.3.pdf
Rating Unit V DD DC supply voltage 3.3V (I/O) 3.0 to 3.6 V V CC DC supply voltage 2.5V (core) 2.25 to 2.75 V o T A Commercial temperature 0 to 125 C OV528 Datasheet Doc #DS201 © OmniVision Technologies Inc., 2002, version 1.0 Page 19 D ATASHEET Register Table & Command Set Register Table Table 34. Register
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PDF
S9111A_Ebay_PowerModulePowersupply.pdf
S9111A 低功耗原边反馈控制芯片 概述 特点 S9111A 是一款恒压、恒流的原边反馈控制芯片， 原边反馈控制 内置 VCBO 800V 的功率三极管，适用于充电器和 恒压、恒流精度高 ≦75mW 待机功耗 适配器。 内置 800V 三极管 S9111A 采用特有的输出线损补偿技术，可以有效 可调的输入线电压补偿技术 的补偿输出电流在输出线上的损耗压降。 可调的输出线损补偿技术 S9111A 内置环路补偿电路，无需外围补偿电路， 抖频减少系统电磁干扰 开路保护 系统具有良好的稳定性。S9111A 可以实现良好的 短路保护 恒压、恒流特性，满足待机功耗小于 75mW
in „China PowerPanelMeter PZEM-022“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Espier_III.pdf
SDRAM_DQ2 K IO_L2P_3 32 VB2 V V V V V V V K IO_L32P_1 101 SDRAM_DQ3 N IO_L2N_3 30 VB1 MT48LC16M16A2TG-75 RP10 N IO_L32N_1 100 SDRAM_DQ0 A IO_L36P_3 29 VB0 108 49 2 4 5 6 1 4 5 DSEN4 8 1 DS_EN4 A IO_L33P_1 99 SDRAM_DQ1 B IO_L36N_3 27 VSYNC 113 GND GND 54 DSEN2 7 2 DS_EN2 B IO_L33N_1 98 LED3 IO_L37P_3 26
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Datei
ds1822.c
// Bedienung des Thermometers. void ds_send_bit(bit); void DS1822_sendbyte(byte); bit ds_read_bit(); byte ds_read_byte(); // Parameter für Übertragung #define READDUR 10 #define WRITE_1 2 #define WRITE_0 75 #define TIMESLOT 80 #define RESET_PULSE
in „PIC: CCS Compiler Ansteuerung DS18B22 Temperatursensor“ · Projekte & Code ·
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Datei
main.lst
: \ 00000000 DS8 4 \ In segment DATA_AN, at 0xe01fc000 \ union <unnamed> volatile __data _A_MAMCR \ _A_MAMCR: \ 00000000 DS8 4 \ In segment DATA_AN, at 0xe01fc004 \ union <unnamed> volatile __data _A_MAMTIM \ _A_MAMTIM
in „LPC2103 Speicherproblem“ · Mikrocontroller und Digitale Elektronik ·
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Datei
pinout.h
c5 c6 c7 led:a0 #define use_lcdili9225 1 //ir #define ir_in_port B #define ir_in_pin 0 //ow #define ds1820_port A #define ds1820_pin 5 //led #define LED1_port B #define LED1_pin 1 //owx #define owx_port A #define owx_pin 7 //dht11 //#define dht_port A #define dht_pin 5 //Schacht 1: sd //#define sd_cs_port
in „Header Datei für Konfiguration erstellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „HEXFET als Widerstand?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
plotclock.c
right servos // - added code to support DS1307, DS1337 and DS3231 real time clock chips // - see http://www.pjrc.com/teensy/td_libs_DS1307RTC.html for how to hook up the real time clock // delete or mark the next line as comment if you don't
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfiz34n.pdf
Test Circuit D , ID V DS 90% 5 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° 10% C V GS td(on) r td(offf Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 ) J D = 0.50 t Z ( 1 0.20
in „Mosfet Treiber Baustein“ · Analoge Elektronik und Schaltungstechnik ·