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BTB16-600C.pdf
17. Ordering information scheme (T12 series) T 12 35 - 600 G (-TR) Triac series Current 12 = 12 A Sensitivity 50 = 50 mA 35 = 35 mA 10 = 10 mA Voltage 600 or 6 = 600V 800 or 8 = 800V Package 2 G = D PAK Packing mode Blank =Tube -TR =Tape and reel DS2115 - Rev
in „Leistung für Gatewiderstand Triac“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS100728A_IXTN660N04T4_-1022876.pdf
Rights Reserved IXTN660N04T4 Fig. 7. Input Admittance Fig. 8. Transconductance 800 800 VDS = 5V V DS= 5V TJ= - 40ºC 700 700 600 600 25ºC s e500 n500 e e p e 150ºC m400 S400 - - D f I300 g300 TJ= 150ºC 25ºC - 40ºC 200 200 100 100 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 100 200 300 400 500 600
in „Suche Power-MosFet für etwa 600A“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
PIC16F630_DS1820.asm
& erkennen call delay_600us movlw 0xCC movwf ds1820 call write_ds1820 ; ROM-Kommando 0xCC: Skip ROM call delay_600us movlw 0x44 movwf ds1820 call write_ds1820 ; Kommando 0x44: Convert Temperature call delay_1s call init_ds1820 call delay_600us movlw 0xCC movwf ds1820 call write_ds1820 ; ROM-Kommando 0xCC: Skip ROM movlw 0xBE movwf ds1820 call write_ds1820 ; Kommando 0xBE: Read Scratchpad call read_ds1820 movf ds1820, w movwf temp1 ; Temperatur
in „DS1820 an PIC16F630 - Softwareprobleme, ich verzweifle!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
VMO1200-01F.pdf
junction temperature T VJ 1000 1000 9 V 9 V 8 V 10 V 8 V 10 V 15 V 15 V 800 TJ= 25°C 800 TJ= 125°C 600 600 ID D 7 V 7 V [A] 400 [A] 400 200 200 6 V V GS= 6 V V GS= 5 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS [V] V DS [V] Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic 2.0 4.0 8 VDS= 6 V 7 V 7 T = 125°C VJ 1.6 3.2 RDS(on) 6 normalized 5 1.2 2.4R DS(on) RDS(on) RDS(on) 4 [mΩ] 8 V 0.8 R 1.6 [mΩ] 3 9 V normal. DS(on) 10 V 15 V 2 0.4 0.8 1 0.0 0.0 0 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000 T VJ [°C] ID [A] Fig. 5 Typ. drain source on-state
in „Impulsströme“ · Analoge Elektronik und Schaltungstechnik ·
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VMO1200-01F.pdf
junction temperature T VJ 1000 1000 9 V 9 V 8 V 10 V 8 V 10 V 15 V 15 V 800 TJ= 25°C 800 TJ= 125°C 600 600 ID D 7 V 7 V [A] 400 [A] 400 200 200 6 V V GS= 6 V V GS= 5 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS [V] V DS [V] Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic 2.0 4.0 8 VDS= 6 V 7 V 7 T = 125°C VJ 1.6 3.2 RDS(on) 6 normalized 5 1.2 2.4R DS(on) RDS(on) RDS(on) 4 [mΩ] 8 V 0.8 R 1.6 [mΩ] 3 9 V normal. DS(on) 10 V 15 V 2 0.4 0.8 1 0.0 0.0 0 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000 T VJ [°C] ID [A] Fig. 5 Typ. drain source on-state
in „Wie wähle ich Treiber für VMO1200-01F?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_SJEP120R100_rev2.1.pdf
Parameter Symbol Conditions Unit Min Typ Max Off Characteristics Drain-Source Blocking Voltage BV DS V GS= 0 V, ID= 600 µA 1200 - - V V = 1200 V, V = 0 V, Tj = 25 C - 100 600 DS GS o V DS = 1200 V, VGS = 0 V, Tj = 150 C - 300 - VDS = 1200 V, VGS < -15 V, Total Drain Leakage Current IDSS o - 1 - µA Tj
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
harware_config_default.txt
PORTBbits.RB1) #define BUTTON3_TRIS (TRISBbits.TRISB0) #define BUTTON3_IO (PORTBbits.RB0) // ENC424J600/624J600 Fast 100Mbps Ethernet PICtail Plus defines //#define ENC100_INTERFACE_MODE 0 // Uncomment this to use the ENC424J600/624J600 Ethernet controller // ENC424J600/624J600 Fast 100Mbps Ethernet PICtail
in „I/O Pins konfigurieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_SJDP120R085_rev1.3.pdf
Parameter Symbol Conditions Unit Min Typ Max Off Characteristics Drain-Source Blocking Voltage BV DS VGS = -15 V, D = 600 µA 1200 - - V V DS= 1200 V, V GS < -15 V, - 10 - Tj = 25 C Total Drain Leakage Current DSS µA V DS= 1200 V, V GS < -15 V, Tj= 150 C - 100 - VGS = -15 V, VDS = 0V - -0.1 -0.3 Total
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
HWP_EX16_MRF24WB_C30.h
(TRISFbits.TRISF12) // Comment this line out if you are using the ENC424J600/624J600, MRF24WB0M, or other network controller. // #define ENC_CS_IO (LATFbits.LATF12) // // SPI SCK, SDI, SDO pins are automatically controlled by the // // PIC24/dsPIC SPI module // #define ENC_SPI_IF
in „Microchip Wifi Demo APP portieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
spp20n60s5_eng_tds.pdf
SPP20N60S5 Cool MOS™ Power Transistor V DS 600 V Feature R DS(on) 0.19 Ω • New revolutionary high voltage technology D 20 A • Worldwide best R in TO 220 DS(on) • Ultra low gate charge PG-TO220 2 • Periodic avalanche rated • Extreme dv/dt rated
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT9080-33GJ5_esp32_8622_low_quiescent_600mA.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. www.richtek.com DS9080-05 June 2017 8 RT9080 Fold-Back Current Limit vs. Temperature SNS Input Current vs. Temperature 1400 0.9 1200 0.8 ) ) μ 0.7 A 1000 t ( n 0.6 i VOUT= 3.3V r i 800 u 0.5 L t n 600 u 0.4 e VOUT= 0.8V
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fm600tu-07a_e.pdf
using thermally conductive grease of λ = 0.9[W/(m • K)]. * Feb. 2009 2 MITSUBISHI <MOSFET MODULE> FM600TU-07A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS (TYPICAL) Chip (TYPICAL) Chip 600 600 VGS = 20V 12V 10V V DS= 10V ) 500 ) 500 A 15V
in „Wechselrichter mit MOSFET Endstufe“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LHC1-22XX_Super_LEDs.pdf
Current LES Part Number Min. Typ. CCT Min. (lm) Typ. (lm) (lm/W) (mA) (mm) 70 73 3000K 2325 2600 122 600 13.0 LHC1-3070-1205 70 73 3500K 2325 2600 122 600 13.0 LHC1-3570-1205 70 73 4000K 2450 2750 130 600 13.0 LHC1-4070-1205 70 73 5000K 2450 2750 130 600 13.0 LHC1-5070-1205 70 73 5700K 2450 2750 130 600
in „Entladeformel einer Spule“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AP9101C.pdf
Selectable Auto Option 1 Permission -BTTRG1 Release AP9101Cxxx 4.280V 4.080V 2.300V 2.300V 0.125V 0.600V -0.100V 8.0V 7.3V Selectable Auto Option 1 Permission -BUTRG1 Release 13 of 26 November 2018 AP9101C © Diodes Incorporated Document number: DS37771 Rev. 7 - 2 www.diodes.com AP9101C Ordering Information
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
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PDF
DS_UJ3N120070K3S-1530204.pdf
Vgs = -10V u r 30 C1.E-05 C g n k r 20 e D L i1.E-06 10 r D 0 1.E-07 0 1 2 3 4 5 6 7 8 9 10 200 400 600 800 1000 1200 Drain-Source Voltage,DS (V) Drain-Source Voltage, DS(V) Figure 3 Typical output characteristics Figure 4 Typical drain-source leakage at TJ= 175°C at VGS= -20V Rev. B, December 2018 4
in „SiC Kaskoden Body Diode“ · Analoge Elektronik und Schaltungstechnik ·
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MTW8N60E.PDF
247 with Isolated Mounting Hole TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 8.0 AMPERES 600 VOLTS This high voltage MOSFET uses an advanced termination R DS(on) = 0.55 OHM scheme to provide enhanced voltage–blocking capability without degradingperformance over time. In addition, this advanced
in „Identifizierung Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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IRFB3006_IR.pdf
On-Resistance vs. Temperature 16000 VGS = 0V, f = 1 MHZ 16 C = C + C , C SHORTED ID= 170A iss gs gd ds V V = 48V Crss = gd ( DS C = C + C g V DS= 30V )12000 oss ds gd l 12 F o ( C iss e c r n o i 8000 S 8 a t a e C a C G S 4 4000 Coss G V Crss 0 0 0 40 80 120 160 200 240 280 1 10 100 QG Total Gate Charge
in „Motor PWM Steuerung, Mosfet Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
XLamp7090XR-E.pdf
of Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com/xlamp 4 CLD-DS05.011 Relative Spectral Power Distribution Relative Spectral Power )100 ( r 80 e w o t 60 5000K - 10000K CCT n i 3700K - 5000K CCT d 40 2600K - 3700K CCT R v t 20 l e R 0 400 450 500 550 600 650 700
in „LiPo Zelle Impulsbelastung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOSFET.pdf
Normalized On-Resistance vs. Temperature 35000 V = 0V, f = 100 kHz 16 GS ID= 180A C iss= Cgs+ Cgd C dsSHORTED V V = 80V 30000 C rss= Cgd ( DS C = C + C g V DS = 50V ) oss ds gd l 12 V = 20V F 25000 o DS ( Ciss e c r n 20000 o i - 8 a t a 15000 e C a C G 10000 ,S 4 Coss G V 5000 Crss 0 0 0 50 100 150 200
in „LeistungsMosfet Kühlfläche als Drain-Anschluss nutzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Transistoren_cht.pdf
30 D-PAK Siemens SPD30N03L 30 0.018 30 D-PAK Siemens SPD31N05 55 0.04 31 D-PAK Siemens SPN01N60S5 600 6 1 SOT-223 Siemens Revised 1Q '99 - 53 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part V DSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W)
in „Frage Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Power_MOSET_Cross_reference.pdf
30 D-PAK Siemens SPD30N03L 30 0.018 30 D-PAK Siemens SPD31N05 55 0.04 31 D-PAK Siemens SPN01N60S5 600 6 1 SOT-223 Siemens Revised 1Q '99 - 53 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part V DSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W)
in „Schaltregler Fragen“ · Analoge Elektronik und Schaltungstechnik ·
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ssr2n60a.pdf
Advanced Power MOSFET SSR/U2N60A FEATURES BV DSS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology R DS(on) = 5 Ω Lower Input Capacitance I = 1.8 A Improved Gate Charge D Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 25 μA (Max.) @ V DS = 600V Lower R : 3.892 Ω (Typ.) 2 DS(ON) 1 12 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 600 V o Continuous Drain Current (
in „Ersatz für SSR2N60A“ · Analoge Elektronik und Schaltungstechnik ·
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ga1.pdf
0.300(0.012) 0.510(0.020) 1.030(0.041) 1.900(0.075)REF AZ431-A 15 of 19 March 2018 Document number: DS36721 Rev. 6 - 2 www.diodes.com © Diodes Incorporated AZ431-A Package Outline Dimensions (Cont. All dimensions in mm.) (4) Package Type: SOT89 1.400(0.055) 4.400(0.173) 1.600(0.063) 4.600(0.181) Option
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sct2080ke.pdf
Crss e 20 n n t E c e p o a 10 S 10 C Ta= 25ºC s f = 1MHz o VGS= 0V C 1 0 0.1 1 10 100 1000 0 200 400 600 800 Drain - Source Voltage :DS[V] Drain - Source Voltage : DS[V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Ta= 25ºC f T a 25ºC ] VDD= 400V V DD= 400V V I= 10A 1000
in „Verarmungs- oder Anreicherungstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Article_Linear_Power_MOSFETs.pdf
circuit or off.In the ohmic region,the � deviceactsasaresistorwithanalmostconstanton-resistance � (R DS ) and is equal to the drain voltage (V ) divDSed by ��������������� ON ����������� the drain current (I ).DS the linear mode of operation,the �������� device operates in the current-saturated region
in „Stromsenke / el. Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM61.pdf
to +100˚C range n Output Impedance 800 (max) n Suitable for remote applications Typical Application DS012897-2 V O =(+10 mV/˚C x T ˚C) + 600 mV Temperature (T) Typical O +100˚C +1600 mV +85˚C +1450 mV +25˚C +850 mV 0˚C +600 mV −25˚C +350 mV −30˚C +300 mV FIGURE 1. Full-Range Centigrade Temperature Sensor
in „R8C/13 Software-Verständnisfrage“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LUXEON_K2_BLAU_LXK2_PB14_N00.pdf
forward current vs. ambiJMAX 150ºC.ture, based on T LUXEON K2 Emitter Datasheet DS51 (5/06) 18 Current Derating Curve for 700 mA Drive Current Green, Cyan, Blue and Royal Blue 800 A 700 m t 600 n e 500 r C d 400 r Rθ =50ºC/W w 300 RθJ=40ºC/W r J A F 200 RθJ A0ºC/W - RθJ A5ºC/W IF100
in „[S] LED aus Feuerwehr Singalleuchte (Blitzlicht)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_IRFB7430.pdf
–– 14240 ––– pF VGS= 0V C Output Capacitance ––– 2130 ––– V = 25V oss DS Crss Reverse Transfer Capacitance ––– 1460 ––– ƒ = 1.0 MHz C eff. (ER) Effective Output Capacitance (Energy Related) ––– 2605 ––– V = 0V, V = 0V to 32Vi oss GS DS Cosseff. (TR) Effective Output Capacitance
in „MOSFET Steuer vs Hauptkreis“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2080ke-e.pdf
Crss e 20 n n t E c e p o a 10 S 10 C Ta= 25ºC s f = 1MHz o VGS= 0V C 1 0 0.1 1 10 100 1000 0 200 400 600 800 Drain - Source Voltage :DS[V] Drain - Source Voltage : DS[V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Ta= 25ºC f T a 25ºC ] VDD= 400V V DD= 400V V I= 10A 1000
in „Datenblatt fraglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PT4115E.pdf
in across the LED(s) as shown below: still air. 1600 Max. Power Disspation 1400 1200 ) 1000 r w800 o600 P 400 200 0 -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 13 PT4115_DS Rev EN_2.6 PT4115 30V, 1.2A Step-down High Brightness
in „PT4115 KSQ raucht ab. Gleichrichter nötig?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PT4115E_Copy.pdf
in across the LED(s) as shown below: still air. 1600 Max. Power Disspation 1400 1200 ) 1000 r w800 o600 P 400 200 0 -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 13 PT4115_DS Rev EN_2.6 PT4115 30V, 1.2A Step-down High Brightness
in „Driver IC für High Power LED bis max 3Euro“ · Mikrocontroller und Digitale Elektronik ·
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PDF
625945.pdf
Type (π-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: R DS (ON) = 0.54Ω (typ.) • High forward transfer admittance: |Y fs = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (V DS = 600 V) • Enhancement mode: V th= 2.0~4.0 V (VDS = 10 V, D = 1 mA) www.DataSheet4U.com
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C P-Ch - 5 DS GS J VDS ≥ 5 V, GS= 4.5 V N-Ch 0.6 On-State Drain Current D(on) A VDS ≤ - 5 V,GS= - 4.5 V P-Ch - 1.0 VGS = 4.5 VD I = 0.29
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C P-Ch - 5 DS GS J VDS ≥ 5 V, GS= 4.5 V N-Ch 0.6 On-State Drain Current D(on) A VDS ≤ - 5 V,GS= - 4.5 V P-Ch - 1.0 VGS = 4.5 VD I = 0.29
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfb3077pbf.pdf
On-Resistance ––– 2.8 3.3 mΩ V = 10V, I = 75A g GS D VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= VGS ID= 250μA DSS Drain-to-Source Leakage Current ––– ––– 20 μA V DS= 75V, VGS= 0V ––– ––– 250 V DS= 75V, VGS= 0V, TJ= 125°C GSS Gate-to-Source Forward Leakage ––– ––– 100 nA V GS= 20V Gate-to-Source
in „Suche nach Treiber für Power-Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STB10NK60Z.pdf
STB10NK60Z/-1 - STP10NK60Z/FP STW10NK60Z N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET General features Package Type VDSS R DS(on) D Pw STB10NK60Z 600 V <0.75 Ω 10 A 115 STB10NK60Z-1 600 V <0.75 Ω 10 A 115 23 23 3 STP10NK60ZFP 600 V <0.75 Ω 10 A 35 1 1 12 TO-220 TO-220FP STP10NK60Z 600 V <0.75 Ω 10 A 115 TO-247 STW10NK60Z 600 V <0.75 Ω 10 A 156 ■ TYPICAL R DS(on)= 0.65Ω 1 3 3 12 ■ EXTREMELY HIGH dv/dt CAPABILITY D²PAK I²PAK ■
in „Ersatz für STB10NK60Z“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Linear_Power_MOSFETS_Basic_and_Applications.pdf
500 46 0.18 240 TO-264 @ Vds 400V,dI = 0.6A IXTN62N50L 500 62 0.156 SOT-227B @ V = 400V, I = 0.75A ds d IXTB62N50L 500 62 0.156 300 PLUS264 @ Vds 400V,dI = 0.75A IXTH12N100L 1000 12 0.31 200 TO-247 @ Vd= 600V,d= 0.25A IXTX22N100L 1000 24 0.18 240 PLUS247 @ Vds 800V,dI = 0.3A IXTN22N100L 1000 24 0.18
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mc14553b-d-1192980.pdf
10 LE Q3 5 Parameter Symbol Value Unit O.F. 14 DC Supply Voltage Range V DD −0.5 to +18.0 V 11 DIS DS1 2 Input or Output Voltage Range Vin −0.5 to DD V DS2 1 (DC or Transient) V out + 0.5 13 MR DS3 15 Input Current (DC or Transient) per Pin Iin ±10 mA V DD= PIN 16 Output Current (DC or Transient) per
in „MC14553BCP - Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
On-Resistance vs. Temperature 16000 16 VGS = 0V, f = 1 MHZ ID= 81A Ciss = gs+ Cgd CdsSHORTED ) C = C ( V DS= 160V rss gd e V = 100V 12000 Coss = ds+ Cgd a 12 DS F C o V DS= 40V ( iss V e c n u i 8000 o 8 a o p - C a , G C , 4 4000 G C V oss Crss 0 0 0 40 80 120 160 200 1 10 100 Q Total Gate Charge (nC) V ,
in „Ersatz Mosfet für 6kw Wechselrichter "Reliable/WZRELB"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1551dl.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C P-Ch - 5 DS GS J VDS ≥ 5 V, GS= 4.5 V N-Ch 0.6 On-State Drain Current D(on) A VDS ≤ - 5 V,GS= - 4.5 V P-Ch - 1.0 VGS = 4.5 VD I = 0.29
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SW6007.pdf
支持 BC1.2 DCP 模式 • QFN-32(4x4mm) 封装 支持苹果/三星模式 • Lightni解密 内置 Lightning 解密功能 Mode: iSW_Release_DS066_第 1 页 共 19 页 www.ismartware.com 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO., LTD. 4. 功能框图 Mode: iSW_Release_DS066_v1.0 第 2 页 共 19 页 www.ismartware.com 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO.,
in „I2C: Li/ion Mobile Power Shield SW6007<->SW6115“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PT4115E.pdf
150 u ( i I100 50 0 0 5 10 15 20 25 30 Supply Voltage Vin(V) LED Current vs Vdim 800 700 R=0.13ohm ) 600 m t 500 e u 400 c E 300 L 200 R=0.33ohm 100 0 0 1 2 3 4 5 Dim Pin Voltage (V) China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 7 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down High
in „LED 20-50mA mit verlustarmer und winziger Lösung an 24V DC/= betreiben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PT4115E-datasheet.pdf
150 u ( i I100 50 0 0 5 10 15 20 25 30 Supply Voltage Vin(V) LED Current vs Vdim 800 700 R=0.13ohm ) 600 m t 500 e u 400 c E 300 L 200 R=0.33ohm 100 0 0 1 2 3 4 5 Dim Pin Voltage (V) China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 7 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down High
in „Problem bei LEDKSQ“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
0.808 0.82 V Feedback Current FB V FB = 0.8V -- 10 -- nA High-Side Switch On Resistance R -- 45 -- m DS(ON) High-Side Switch Current Limit BOOT SW = 4.8V -- 10 -- A Oscillation Frequency OSC1 -- 600 -- kHz Short Circuit Oscillation Frequency OSC2 V FB = 0V -- 190 -- kHz Maximum Duty Cycle DMAX V FB =
in „Schaltregler - maximaler Spulenstrom“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
0.808 0.82 V Feedback Current FB V FB = 0.8V -- 10 -- nA High-Side Switch On Resistance R -- 45 -- m DS(ON) High-Side Switch Current Limit BOOT SW = 4.8V -- 10 -- A Oscillation Frequency OSC1 -- 600 -- kHz Short Circuit Oscillation Frequency OSC2 V FB = 0V -- 190 -- kHz Maximum Duty Cycle DMAX V FB =
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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RT8298E-02.pdf
0.808 0.82 V Feedback Current FB V FB = 0.8V -- 10 -- nA High-Side Switch On Resistance R -- 45 -- m DS(ON) High-Side Switch Current Limit BOOT SW = 4.8V -- 10 -- A Oscillation Frequency OSC1 -- 600 -- kHz Short Circuit Oscillation Frequency OSC2 V FB = 0V -- 190 -- kHz Maximum Duty Cycle DMAX V FB =
in „Woher Eingangsschwingung am Buck“ · Analoge Elektronik und Schaltungstechnik ·
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2sk1402.pdf
Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source K1402 V 600 — — V I = 10 mA, V = 0 (BR)DSS D GS breakdown voltage K1402A 650 — — Gate to source breakdown V ±30 — — V I = ±100 µA, V = 0 (BR)GSS G DS voltage Gate to source leak current IGSS — — ±10 µA V GS= ±25
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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24LC256_32k_I2C-EEPROM.pdf
Note 1) — 100 1.8V ≤ VC ≤ 5.5V 24FC256 6 THD:STA Start condition hold time 4000 — ns 1.8V ≤ CC < 2.5V 600 — 2.5V ≤ VC ≤ 5.5V 600 — 1.8V ≤ VC < 2.5V 24FC256 250 — 2.5V ≤ CC ≤ 5.5V 24FC256 7 TSU:STA Start condition setup time 4700 — ns 1.8V ≤ CC < 2.5V 600 — 2.5V ≤ VC ≤ 5.5V 600 — 1.8V ≤ CC < 2.5V 24FC256
in „immer noch EEprom“ · Mikrocontroller und Digitale Elektronik ·
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sm6t100a.pdf
SM6TxxA, SM6TxxCA Datasheet 600 W TVS in SMB Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at
in „Suche Diode GP839“ · Analoge Elektronik und Schaltungstechnik ·
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EEPROM.pdf
Note 1) — 100 1.8V ≤ VC ≤ 5.5V 24FC256 6 THD:STA Start condition hold time 4000 — ns 1.8V ≤ CC < 2.5V 600 — 2.5V ≤ VC ≤ 5.5V 600 — 1.8V ≤ VC < 2.5V 24FC256 250 — 2.5V ≤ CC ≤ 5.5V 24FC256 7 TSU:STA Start condition setup time 4700 — ns 1.8V ≤ CC < 2.5V 600 — 2.5V ≤ VC ≤ 5.5V 600 — 1.8V ≤ CC < 2.5V 24FC256
in „EEPROM auslesen (24xx256) mit Pic16f819, an PC über RS232“ · Mikrocontroller und Digitale Elektronik ·