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DS75LX.pdf
+ -55°C to +125°C (150 mils) SCL 2 L S 7 A0 8 SO X 5 DS75LXS+T&R -55°C to +125°C (150 mils), O.S. 3 6 A 2500 Piece 1 DS75LXU+ -55°C to +125°C 8 µSOP GND 4 5 A2 (µMAX) 8 µSOP SO (150 mils) DS75LXU+T&R -55°C to +125°C (µMAX), 3000 Piece + Denotes lead-free
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Micrel.pdf
Specification located at http://www.microchip.com/packaging. 2016-2019 Microchip Technology Inc. DS20005685B-page 35 MIC2915X/30X/50X/75X NOTES: DS20005685B-page 36 2016-2019 Microchip Technology Inc. MIC2915X/30X/50X/75X APPENDIX A: REVISION HISTORY Revision A (December 2016) • Converted Micrel
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BMP581.pdf
Bosch Sensortec | BST-BMP581-DS004-11 1 | 75 BMP581 Barometric Pressure Sensor BST-BMP581-DS004-11 Document revision 1.11 Document release date February 2025 Document number BST-BMP581-DS004-11 Sales Part Number 0 273 017 025 Notes
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Datei
Maxim-Dallas-Liste.txt
DS1631A 2w.m&s.nv.9-12b.1out.a=autostart ds1678 RT-Event-Recorder DS1731 2w.m&s.nv.9-12b.1out.no autostart DS1921H DS2480B Interface 1wire-v24 DS2490S Interface 1wire-usb 24pinSO DS75 2w.m&s.vol.9-12b.1out.no
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LM2937.pdf
Transient Response Ripple Rejection DS011280-13 DS011280-14 DS011280-15 Output Impedance Maximum Power Maximum Power Dissipation Dissipation (TO-220) (TO-263) (Note 2) DS011280-16 DS011280-17 DS011280-18 5 www.national.com 7 3 9 Typical Performance Characteristics (Continued) 2 M L Low Voltage Behavior Low Voltage Behavior Low Voltage Behavior DS011280-19 DS011280-20 DS011280-21 Output at Voltage Output at Voltage Extremes Output Capacitor ESR Extremes DS011280-24 DS011280-22 DS011280-23 Peak Output Current DS011280-25 Typical Application DS011280
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irfb3077pbf.pdf
g GS D VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= VGS ID= 250μA DSS Drain-to-Source Leakage Current ––– ––– 20 μA V DS= 75V, VGS= 0V ––– ––– 250 V DS= 75V, VGS= 0V, TJ= 125°C GSS Gate-to-Source Forward Leakage ––– ––– 100 nA V GS= 20V Gate-to-Source
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LM567.pdf
Detection Bandwidth Variation ± 0.1 ±0.1 %/˚C with Temperature Largest Detection Bandwidth Variation 4.75–6.75V ± 1 ±2 ±1 ±5 % V with Supply Voltage Highest Center Frequency 100 500 100 500 kHz Center Frequency Stability (4.75–5.75V)0< T < 70 35 ± 60 35 ± 60 A ppm/˚C −55 < TA < +125 35 ± 35± ppm/˚C 140 140
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GA4A4P.pdf
R1 R 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C 8 Data Sheet D16494EJ2V0DS GA4xxx [GA4L3Z] TYPICAL CHARACTERISTICS (T A = 25°C) COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR
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PDF
IXTA-TP3N50D2_.pdf
Test Conditions Min. Typ. Max. L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 SOA V = 400V, I = 0.19A, T = 75°C, Tp = 5s 75 W DS D C TO-220 (IXTP) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T J 25°C, Unless Otherwise Specified) Min. Typ. Max. V I = 3A, V = -10V, Note 1 0.8 1.3 V
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PDF
MCAC75N06YBTP-datasheet-3.pdf
60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source On-Resistance R DS(on) V GS0V, I D20A 5 6 mΩ Diode Characteristics Continuous Body Diode Current S 75 A Diode
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LM10.PDF
Reference Noise Voltage DS005652-45 DS005652-46 DS005652-47 Minimum Supply Voltage Output Saturation Typical Stability Range DS005652-48 DS005652-49 DS005652-50 Typical Applications (Note 10) (Pin numbers are for devices in 8-
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DS1210.pdf
set by theOL pin, and then falls below VBAT. Figure 1 shows a typical application incorporating the DS1210 in a microprocessor-based system. Section A shows the connections necessary to write protect the RAM when V CC is less than 4.75 volts and to back up the supply with batteries. Section B shows the use of the DS1210 to halt the processor when V CC is less than 4.75 volts and to delay its restart on power-up to prevent spurious writes. 2 of 6 DS1210 SECTION A - BATTERY BACKUP Figure 1 BATTERY BACKUP CURRENT DRAIN
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PDF
DS1210.pdf
set by theOL pin, and then falls below VBAT. Figure 1 shows a typical application incorporating the DS1210 in a microprocessor-based system. Section A shows the connections necessary to write protect the RAM when V CC is less than 4.75 volts and to back up the supply with batteries. Section B shows the use of the DS1210 to halt the processor when V CC is less than 4.75 volts and to delay its restart on power-up to prevent spurious writes. 2 of 6 DS1210 SECTION A - BATTERY BACKUP Figure 1 BATTERY BACKUP CURRENT DRAIN
in „DS1210 als Ersatz für BA6162?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
604551.pdf
DS 75 DSI 75 DSA 75 DSAI 75 Rectifier Diode V RRM = 800-1800 V Avalanche Diode IF(RMS) = 160 A I = 110 A F(AV)M DO-203 AB VRSM V(BR)min V RRM Anode Cathode V V V on stud on stud C A DS DSI 900 - 800 DS75-08B DSI75-08B DSA DSAI 1300 - 1200 DS75-12B DSI75-12B A C 1300 1300 1200 DSA75-12B DSAI75-12B 1700 1760 1600 DSA75-16B DSAI75-16B 1900 1950 1800 DSA75-18B DSAI75-18B ① Only for Avalanche Diodes 1/4-28UNF A = Anode
in „Kühlkörper für Gleichrichterdiode“ · Analoge Elektronik und Schaltungstechnik ·
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ACS_750ECA-100__644500_e.pdf
m ( ( 7 i –40 C I i –20 C 6.8 n10 6.6 S 25 C 85 C 6.4 5 6.2 6 0 -50 -25 0 25 50 75 100 125 150 -100 -75 -50 -25 25 50 75 100 Temperature (°C) Primary Current (A) V out vs Primary Current Symmetry Vcc = 5 V Vcc = 5 V 100.5 4.5 100.4 4 100.3 3.5 ) Ip = 100 A %00.2 3 y00.1 V t t2.5 e
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ACS_750ECA-100__644500_e.pdf
m ( ( 7 i –40 C I i –20 C 6.8 n10 6.6 S 25 C 85 C 6.4 5 6.2 6 0 -50 -25 0 25 50 75 100 125 150 -100 -75 -50 -25 25 50 75 100 Temperature (°C) Primary Current (A) V out vs Primary Current Symmetry Vcc = 5 V Vcc = 5 V 100.5 4.5 100.4 4 100.3 3.5 ) Ip = 100 A %00.2 3 y00.1 V t t2.5 e
in „Op - Messbereich - Strom - ACS 750LCA-050“ · Mikrocontroller und Digitale Elektronik ·
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PDF
device_list_hilo_all03_v9-12.pdf
(32K*8) DS1216F (8K*8) DS1220Y/AB/AD DS1225AB/AD/D/E/Y DS1230Y/AB DS1235Y/AB DS1243Y DS1244Y DS1245EE DS1245Y/AB DS1248Y DS1286 DS12887 DS1386 (32K*8) DS1386 (8K*8) DS1387 DS1486 DS1630Y/AB DS1642 DS1643 DS1645EE
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LM78LXX.pdf
Required to Maintain Line Regulation www.national.com 4 PrintDate=1997/05/22 PrintTime=16:40:19 8246 ds007744 Rev. No. 1 Proof 4 LM78L15AC Unless otherwise specified, IN= 23V Symbol Parameter Conditions Min Typ Max Units VO Output Voltage 14.4 15.0 15.6 V 17.5V ≤ V ≤ 30V IN 1 mA ≤ IO≤ 40 mA 14.25 15.75
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STP6NK90ZFP.pdf
0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 10.40 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.40 V2 0° 8° DS2985 - Rev 6 page 11/26
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PDF
STP6NK90ZFP.pdf
0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 10.40 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.40 V2 0° 8° DS2985 - Rev 6 page 11/26
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DS_UJ3N120070K3S-1530204.pdf
Static Parameter Symbol Test Conditions Value Units Min Typ Max Drain-source breakdown voltage BV DS V GS- 20V, ID=1mA 1200 V V DS1200V, 5 30 VGS -20V, T J 25°C Total drain leakage current D mA V DS1200V, 18 V GS-20V, T J 175°C V =-20V, T=25°C 5 50 Total gate leakage current G GS j mA V GS20V, T=j75
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IXFH13N50.PDF
15 e 15 p p m m - 10 - 10 ID ID 5V 5 5 0 0 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 V - Volts V - Volts DS GS Fig. 3 R vs. Drain Current Fig. 4 Temperature Dependence DS(on) of Drain to Source Resistance 1.4 2.50 TJ= 25°C 2.25 1.3 V = 10V e GS e 2.00 l 1.2 l ID= 6A a a 1.75 r r N 1.1 N 1.50 - - o VGS= 15V
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IXFH13N50.PDF
15 e 15 p p m m - 10 - 10 ID ID 5V 5 5 0 0 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 V - Volts V - Volts DS GS Fig. 3 R vs. Drain Current Fig. 4 Temperature Dependence DS(on) of Drain to Source Resistance 1.4 2.50 TJ= 25°C 2.25 1.3 V = 10V e GS e 2.00 l 1.2 l ID= 6A a a 1.75 r r N 1.1 N 1.50 - - o VGS= 15V
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IXFH13N50.PDF
15 e 15 p p m m - 10 - 10 ID ID 5V 5 5 0 0 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10 V - Volts V - Volts DS GS Fig. 3 R vs. Drain Current Fig. 4 Temperature Dependence DS(on) of Drain to Source Resistance 1.4 2.50 TJ= 25°C 2.25 1.3 V = 10V e GS e 2.00 l 1.2 l ID= 6A a a 1.75 r r N 1.1 N 1.50 - - o VGS= 15V
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D170086D.pdf
and H-ADJ versions, ILOAD = 100 mA, T A= 25˚C Normalized Efficiency Dropout Voltage Output Voltage DS012661-4 DS012661-5 DS012661-3 Line Regulation Load Regulation Output Ripple Voltage DS012661-6 DS012661-7 DS012661-8 Operating Shutdown Switching Frequency Quiescent Current Quiescent Current DS012661
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bts117.pdf
th) j D DS 250 2.0 Ω V 200 1.6 ) o 175 ) 1.4 S ( D I R 150 V 1.2 max. 125 1.0 100 0.8 typ. 75 0.6 50 0.4 25 0.2 -50 -25 0 25 50 75 100 °C 150 0-50 -25 0 25 50 75 100 °C 150 T T j j Page 6 19.05.2000 BTS 117 Typ. transfer characteristics Typ. output characteristic ID= f(V );IN DS =12V; T =2j°C ID= f(V DS ); T j25°C Parameter: V IN 10 10 10V 6V 5V A A 4V ID 6 I 6 4 4 Vin=3V 2 2 0 0 0 1 2 3 4 5 6 V 8 0 1 2 3 4 V 6 VIN V DS Transient thermal impedance Z thJC = f (tp) parameter :
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bts117.pdf
th) j D DS 250 2.0 Ω V 200 1.6 ) o 175 ) 1.4 S ( D I R 150 V 1.2 max. 125 1.0 100 0.8 typ. 75 0.6 50 0.4 25 0.2 -50 -25 0 25 50 75 100 °C 150 0-50 -25 0 25 50 75 100 °C 150 T T j j Page 6 19.05.2000 BTS 117 Typ. transfer characteristics Typ. output characteristic ID= f(V );IN DS =12V; T =2j°C ID= f(V DS ); T j25°C Parameter: V IN 10 10 10V 6V 5V A A 4V ID 6 I 6 4 4 Vin=3V 2 2 0 0 0 1 2 3 4 5 6 V 8 0 1 2 3 4 V 6 VIN V DS Transient thermal impedance Z thJC = f (tp) parameter :
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PDF
BTS117.pdf
th) j D DS 250 2.0 Ω V 200 1.6 ) o 175 ) 1.4 S ( D I R 150 V 1.2 max. 125 1.0 100 0.8 typ. 75 0.6 50 0.4 25 0.2 -50 -25 0 25 50 75 100 °C 150 0-50 -25 0 25 50 75 100 °C 150 T T j j Page 6 19.05.2000 BTS 117 Typ. transfer characteristics Typ. output characteristic ID= f(V );IN DS =12V; T =2j°C ID= f(V DS ); T j25°C Parameter: V IN 10 10 10V 6V 5V A A 4V ID 6 I 6 4 4 Vin=3V 2 2 0 0 0 1 2 3 4 5 6 V 8 0 1 2 3 4 V 6 VIN V DS Transient thermal impedance Z thJC = f (tp) parameter :
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PDF
LUXEON_K2_BLAU_LXK2_PB14_N00.pdf
200% 175% Red Photometric ) ( 150% Red-Orange Photometric t Amber Photometric t 125% u t g 100% L v 75% a e R 50% 25% 0% -20 0 20 40 60 80 100 120 140 Junction TemperatureJ T ( C) Figure 8. Relative light output vs. junction temperature for red, red orange and amber. LUXEON K2 Emitter Datasheet DS51 (
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PDF
irfp2907.pdf
AUTOMOTIVE MOSFET ® HEXFET Power MOSFET Typical Applications l Integrated Starter Alternator D V DSS = 75V l 42 Volts Automotive Electrical Systems Benefits R = 4.5mΩ l Advanced Process Technology G DS(on) l Ultra Low On-Resistance l Dynamic dv/dt Rating ID= 209A S l 175°C Operating Temperature l Fast Switching
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PDF
IRFP2907.pdf
AUTOMOTIVE MOSFET ® HEXFET Power MOSFET Typical Applications l Integrated Starter Alternator D V DSS = 75V l 42 Volts Automotive Electrical Systems Benefits R = 4.5mΩ l Advanced Process Technology G DS(on) l Ultra Low On-Resistance l Dynamic dv/dt Rating ID= 209A S l 175°C Operating Temperature l Fast Switching
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LT1161.pdf
to 60V. U TYPICAL APPLICATION 24V + Switch Drop vs Load Current 50VF CT + + R S 0.50 0.1 F T1 V V DS1 0.01 0.45 0.1 F T2 G1 IRFZ34 0.40 LOAD 0.35 0.1 F T3 DS2 0.01 #1 ( O0.30 0.1 F LT1161 G2 IRFZ34 D0.25 T4 L#2D A IN1 DS3 0.01 O0.20 INPUTS IN2 G3 T0.15 IN3 IRFZ34 LOAD IN4 DS4 0.01 #3 0.10 GND 0.05 GND
in „Erfahrungen mit LT1161“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFR2307Z.pdf
Process Technology ® HEXFET Power MOSFET lUltra Low On-Resistance l175°C Operating Temperature D V = 75V lFast Switching DSS lRepetitive Avalanche Allowed up to Tjmax R DS(on) = 16mΩ G Description I = 42A Specifically designed for Automotive applications, S D this HEXFET Power MOSFET utilizes the latest
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PDF
irl7833.pdf
0.1 1 10 100 1000 0.1 1 10 100 1000 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 e I = 75A n D ) t VGS = 10V ( s t TJ= 175°C e e n r O 1.5 C e ) e r e r o l o 100 - a - - r - i N i r (1.0 r ,
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS1775R.pdf
supply range (2.7V – 5.5V) SCL 2–Wire Serial Clock § Software compatible with DS75 2–Wire SDA 2–Wire Serial Data Input/Output Thermal Watchdog in thermometer mode VDD Power Supply Voltage § Space–conscious SOT23–5 package with O.S. Thermostat Output Signal low thermal time constant
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Datei
Uhr_Thermometer.bas
------- 'Konfiguration TWI/I²C '--------------------- Config Sda = Portc.4 Config Scl = Portc.5 'LM75-Adressen Const Lm75_schreiben = &H90 Const Lm75_lesen = &H91 'DS1307-Adresse Const Ds1307_schreiben = &HD0 Const Ds1307_lesen = &HD1 I2cinit '--------------------- 'Konfiguration Eingabe '-----------
in „Bascom LM75 Schalttemperatur auslesen“ · Mikrocontroller und Digitale Elektronik ·
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sm6t100a.pdf
0.40 0.0059 0.0157 D 3.30 3.95 0.1299 0.1556 E 5.10 5.60 0.2008 0.2205 E1 4.05 4.60 0.1594 0.1811 L 0.75 1.50 0.0295 0.0591 1. Values in inches are converted from mm DS0684 - Rev 14 page 6/12 SM6TxxA, SM6TxxCA Package information Figure 14. SMB recommended footprint Figure 15. Marking layout 1.62 2.60 1.62
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PDF
2210280930_Diodes-Incorporated-AP63300WU-7_C2158012.pdf
1.0V UVLO VINUndervoltage Rising Threshold — — 3.5 3.7 V VIN Undervoltage Hysteresis — — 440 — mV R DS(ON)1 High-Side Power MOSFET On-Resistance (Note 8) — — 75 — mΩ R DS(ON)2 Low-Side Power MOSFET On-Resistance (Note 8) — — 40 — mΩ IPEAK_LIMIT HS Peak Current Limit (Note 8) — 4.1 4.5 4.9 A VALLEY_LIMIT
in „Step-Down-Wandler pfeift sehr laut, was tun?“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
SI7611.pdf
Voltage 2.4 60 50 2.1 40 ) ) ( ( h r S 1.8 w 30 G D = 250 µA o V P 20 1.5 10 1.2 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T J Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited byDS(on) ) 10 ( 100 µs n e u 1 ms C 1 a 10 ms r - 100 ms D
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RT9080-33GJ5_esp32_8622_low_quiescent_600mA.pdf
n u I 0.3 C 400 N S 0.2 200 0.1 V IN5V V IN5V, VOUT = 0.8V, EN = 3V 0 0.0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C ) Temperature (°C) Power Off from EN Power On from EN EN EN (2V/Div) (2V/Div) VOUT VOUT (2V/Div) (2V/Div) LOAD LOAD (200mA/Div) (200mA/Div) VIN 4V,
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PDF
IRLR6225PBF_NMOS.pdf
PD-97594 IRLR6225PbF ® HEXFET Power MOSFET V 20 V DS R D D DS(on) max 4.0 mΩ (@V GS= 4.5V) R DS(on) max 5.2 S (@V GS= 2.5V) mΩ G G Q g (typical) 48 nC D-Pak S IRLR6225PbF RG (typical) 2.2 Ω D 42 h A G D S Gate Drain Source Applications • Battery Protection
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PDF
IRFI4212H-117.pdf
On-Resistance vs. Temperature 10000 12.0 VGS = 0V, f = 1 MHZ C = C + C , C SHORTED ID= 6.6A iss gs gd ds Crss = Cgd V 10.0 V DS= 80V Coss = Cds+ Cgd e V DS= 50V ) g F 1000 l 8.0 V DS= 20V ( V c Ciss e a r c o 6.0 a - a C oss - , 100 t 4.0 C Crss G , G V 2.0 10 0.0 1 10 100 0 2 4 6 8 10 12 14 VDS , Drain-to-Source
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PDF
p75nf75.pdf
STB75NF75 STP75NF75 - STP75NF75FP 2 N-channel 75V - 0.0095Ω- 80A - TO-220 - TO-220FP - D PAK STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STB75NF75 75V <0.011Ω 80A (1) (1) 3 3 STP75NF75
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PDF
IRL3713.pdf
specified) Symbol Parameter Min Typ Max Units Conditions gfs Forward Transconductance 76 ––– ––– S V DS= 15V, D = 30A Qg Total Gate Charge ––– 75 110 ID= 30A Qgs Gate-to-Source Charge ––– 24 ––– nC V DS= 15V Q gd Gate-to-Drain ("Miller") Charge ––– 37 ––– V GS= 4.5Vf QOSS Output Gate Charge 61 92 V GS=
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PHC2300_3_1_.pdf
VGS = 0; DS = 50 V; f = 1 MHz − 102 − pF P-channel VGS = 0; DS = −50 V; f = 1 MHz − 45 − pF C output capacitance oss N-channel VGS = 0; DS = 50 V; f = 1 MHz − 15 − pF P-channel VGS = 0; DS = −50 V; f = 1 MHz − 15 − pF C reverse transfer capacitance rss N-channel VGS = 0; DS = 50 V; f = 1 MHz − 7.3 − pF P-channel VGS = 0; DS = −50 V; f = 1 MHz − 3 − pF QG total gate charge N-channel VGS = 10 V; DS= 50 V; D = 170 mA − 6240 − pC P-channel VGS = −10 V; DS= −50 V; D = −115 mA
in „[S] PHC2300 komplementär Mosfet SO8 / Bestellung Farnell/HBE“ · Markt ·
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2CSR275180R1165-ds201-m-b16-a30.pdf
PRODUCT-DETAILS DS201 M B16 A30 DS201 M B16 A30 FI/LS-Schalter Allgemeine Informationen Typ DS201 M B16 A30 Bestellnummer 2CSR275180R1165 EAN 8012542587217 Beschreibung DS201 M B16 A30 FI/LS-Schalter FI/LS-Schalter (RCBOs
in „Preiswerte RCBOs (Kombinierte FI/LS)“ · Haus & Smart Home ·
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PDF
MTE011N10RFP-CystechElectonics.pdf
40 m k a o ea 0.8 D 30 , B ,D 6V D I 20 V 5.5V B 0.6 ID=250μA, 10 VGS=5V VGS=0V 0 0.4 0 2 4 6 8 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 V DS, Drain-Source Voltage(V) Tj, Junction Temperature(°C) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage
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MCP73831.pdf
Inc. DS21984A-page 19 MCP73831 NOTES: DS21984A-page 20 © 2005 Microchip Technology Inc. MCP73831 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory
in „Akku Ladetechnik“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP73832T.pdf
-40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery Regulation Voltage (V) Supply Voltage (V) FIGURE 2-3: Output Leakage Current FIGURE 2-6: Charge Current (I OUT ) vs. (IDISCHARGE )
in „LiPo-Charger mit MCP73832T“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP73831-2_ENG_TDS.pdf
-40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery Regulation Voltage (V) Supply Voltage (V) FIGURE 2-3: Output Leakage Current FIGURE 2-6: Charge Current (I OUT ) vs. (IDISCHARGE )
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·