PD-94184D IRL3713 SMPS MOSFET IRL3713S IRL3713L Applications l High Frequency Isolated DC-DC HEXFET Power MOSFET Converters with Synchronous Rectification for Telecom and Industrial Use V DSS R DS(on) max (mW) ID
PD - 94394A IRL2203NS IRL2203NL HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating V DSS = 30V l 175°C Operating Temperature l Fast Switching R DS(on) = 7.0mΩ l FullyAvalancheRated
PD-94668B IRL7833 IRL7833S IRL7833L ® Applications HEXFET Power MOSFET l High Frequency Synchronous Buck V R max Qg Converters for Computer Processor Power DSS DS(on) l High Frequency Isolated DC-DC 30V 3.8m : 32nC
R UMW IRL540N N-Channel Enhancement Mode Power MOSFET Description The UMW IRL540N uses advanced trench technology and design to provide excellenDS(ON)ith low gate charge. It can be used in a wide variety of applications
DirectFET ISOMETRIC ME Standard Pack Base part number Package Type Orderable Part Number Form Quantity ® IRL7486MPbF DirectFET ME Tape and Reel 4800 IRL7486MTRPbF ) 4.0 220 ( I = 123A 200 c 3.5 D t 180 i e 3.0 A 160 R t 140 O 2.5 r e u 120 u C o 2.0 a 100 - D - TJ= 125°C , 80 a 1.5 ID 60 D ,) TJ= 25°C 40
PD - 9.1495 IRL540N PRELIMINARY HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V DSS = 100V l Isolated Package l High Voltage Isolation = 2.5KVRMS R DS(on) = 0.044 l Sink to Lead Creepage
PD - 91702B IRL1004 HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 40V l Ultra Low On-Resistance l Dynamic dv/dt Rating R DS(on) = 0.0065 l 175°C Operating Temperature G l Fast
PD-9.1370C IRL3705N HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V = 55V DSS l Dynamic dv/dt Rating l 175°C Operating Temperature R DS(on) = 0.01 l Fast Switching G l Fully Avalanche
PD - 9.1495 IRL540N PRELIMINARY HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V DSS = 100V l Isolated Package l High Voltage Isolation = 2.5KVRMS R DS(on) = 0.044 l Sink to Lead Creepage
PD - 95403 IRL1004PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175°C Operating Temperature R DS(on) = 0.0065Ω l Fast
PD - 95403 IRL1004PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 40V l Dynamic dv/dt Rating l 175°C Operating Temperature R DS(on) = 0.0065Ω l Fast
PD-9.1370C IRL3705N HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V = 55V DSS l Dynamic dv/dt Rating l 175°C Operating Temperature R DS(on) = 0.01 l Fast Switching G l Fully Avalanche
PD - 91366 IRL2203N HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V DSS = 30V l Dynamic dv/dt Rating l 175°C Operating Temperature R = 7.0m DS(on) l Fast Switching G l Fully Avalanche
PD - 94953 IRL2203NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V DSS = 30V l Dynamic dv/dt Rating l 175°C Operating Temperature R = 7.0mΩ DS(on) l Fast Switching G l Fully Avalanche
www.datasheetarchive.com This datasheet has been downloaded from http://www.datasheetarchive.com. PD - 9.1495 IRL540N PRELIMINARY HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology V DSS = 100V l Isolated Package l High Voltage Isolation = 2.5KVRMS R DS(on) = 0.044 l Sink to Lead Creepage
PD - 93854B IRL1404 ® HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance V DSS = 40V l Dynamic dv/dt Rating l 175°C Operating Temperature R DS(on) = 4.0mΩ l Fast Switching G l Fully Avalanche
IRL510 G D S 47 Ω Laserdiode 120 mW ca. 160 mA D ca. 9 V 100 Ω G IRL510 S 1 kΩ PWM-Modul 1.0 kHz 50% f % Laser ohne Linse I, f, z.B. 1 kHz 50% duty cycle t strichlierte Bahn Schußapparat Ventil
Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 17 A 0.077 Ω
VGS = 4.0 V ID = 14 A 0.11
Forward Transconductance gfs VDS = 50 V, ID = 17 A 12 S
Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V 2200 pF
Output Capacitance Coss 560
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 140
Total Gate Charge Qg VGS = 5.0 V ID = 28 A, VDS = 80 V 64 nC
Gate-Source Charge Qgs 9.4
Gate-Drain Charge Qgd 27
Turn-On Delay Time tD(on) 8.5
Rise Time tr 170
Turn-Off Delay Time tD(off) 35
Fall Time tf 80
Internal Drain Inductance LD 4.5 nH
Internal Source Inductance LS 7.5
Drain-Source Body
10 28 15 72 40 50 4.5 5 28 15 72 44 56 Table 4: Typical Resistive Switching Times for IRL540 and IRF540 TTL families do not actually deliver 5V in thOHcondition, even into an open circuit. The 5V level can, however, be reached by the addition of a pull-up resistor from the output pin to
with good success, loadingeffectofQ2.Drainvoltagerises recommendation is sometimes given to IRF510vs.IRL520 and surprisingly, the high efficiency above 12v Vdd as the current stored in raisethemosfetdrainvoltageforhigher The IRL520 is a logic family mosfet, causes little heating of these very L1 now dumps
Sehr preiswert (0,49€/Stk bei Reichelt Elektronik, 4,40€/10Stk bei eBay zzgl. 2,50€ Versand) sind IRL540N. Diese sind von den Leistungsdaten für den Einsatz in einem Lightstrip-Controller natürlich erheblich überdimensioniert (100V, 35A), von der Bauform (TO220) jedoch sehr handlich bei Selbstbauprojekten
6.5 and Table 6.6 Table 6.5 Function Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 IRL3 IRL2 IRL1 IRL0 ESUS PSUS TBS Reserved Default 0 0 0 0 0 0 0 0 Table 6.6 Function Register Bit Definition Bit Name Definition Read- Type /Write Bit 0 Reserved Reserved R Reserved Top/Bottom Top/Bottom
6.5 and Table 6.6 Table 6.5 Function Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 IRL3 IRL2 IRL1 IRL0 ESUS PSUS TBS Reserved Default 0 0 0 0 0 0 0 0 Table 6.6 Function Register Bit Definition Bit Name Definition Read- Type /Write Bit 0 Reserved Reserved R Reserved Top/Bottom Top/Bottom
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