Varaktordioden" für Frequenzvervielfacher - - 1971/2 23-cm-Band Elektronisch schaltbare Dämpfungsglieder , A. Claar DF 9 CP 1987/2 87…101 Messtechnik PUFF 2.1, Verbesserte u. erweiterte Version A. Gerstlauer DG 5 SEB 1997/2 67…71 Software J. Gerstlauer DC 9 SX PUFF 2.1, Verbesserte u. erweiterte Version A.
X2 X1 1200 ~ 15000 0,90 0,95 1,00 1,00 0.5 Lifetime Multiplier 0.0 40 50 60 70 80 90 100 110 T (˚C) A IA= actual ripple current Rt 100kHz, I = rated ripple current at 100kHz, 105°C Multiplier of Useful Life as a function of ambient temperature and ripple current load Direct Contact & Support: Jianghai
) VL - 30 V 60 V A 3.5A 2.5A A connection: Peak AC, DC Continuous load current IL u B 4.0A 3.5A t C 6.0A 5.0A B, C connection DC O A connection: Peak load current Ipeak - 6.0A 100 ms (1 shot), V L= DC Power dissipation
switch analog signals e voltage ranges, independent of the logic state of the contrp-p(DD −V EE= 15V) A - signals. When a logical “1” is present at the inhibit input ter- n C minal all channels are “OFF”. ■ Matched switch characteristics: a a CD4051BC is a single 8-channel multiplexer having three ON=
Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from in free air [1] [2] - - 450 K/W junction to ambient [1] [3] - - 210 K/W Rth(j-sp) thermal resistance from [4] - - 90 K/W junction to solder point [1] For Schottky barrier diodes
Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from in free air [1] [2] - - 450 K/W junction to ambient [1] [3] - - 210 K/W Rth(j-sp) thermal resistance from [4] - - 90 K/W junction to solder point [1] For Schottky barrier diodes
Save Enabled 10 Power Save Disabled 0 0 0.1 1 10 100 1000 0.1 1 10 100 1000 I - Output Current - mA I - Output Current - mA O O Figure 5. Figure 6. EFFICIENCY EFFICIENCY vs vs INPUT VOLTAGE INPUT VOLTAGE 100 I = 100 mA 100 V O 2.5 V O VO= 4.5 V IO= 100 mA 90 90 80 80 I = 10 mA I = 10 mA O 70 O 70 O
Save Enabled 10 Power Save Disabled 0 0 0.1 1 10 100 1000 0.1 1 10 100 1000 I - Output Current - mA I - Output Current - mA O O Figure 5. Figure 6. EFFICIENCY EFFICIENCY vs vs INPUT VOLTAGE INPUT VOLTAGE 100 I = 100 mA 100 V O 2.5 V O VO= 4.5 V IO= 100 mA 90 90 80 80 I = 10 mA I = 10 mA O 70 O 70 O
0x07800000 (8192 kB) Active mode Motorola VIP @ 300 MHz (333 MHz, CL 2.5), 131072 kB RAM Found ATI Xilleon X210 NAND flash support detected. Probing... Found flash on CS1: ST NAND128W3A (16777216 bytes) Found flash on CS0: ST NAND128W3A (16777216 bytes) Secure box detected: Verifying AK...Done Verifying headers
detektierende Frequenz ; N = siehe oben ; FS = siehe oben ; k = 67 * 435 / 1000 = 29.145 ; ; Der Faktor a berechnet sich folgender massen ; a = 2 * cos ((k*2*Pi)/N) ; a = 1.8253 ; ; da hier aber mit ganzzahl arithmetik gerechnet wird mus dieser ; faktor a noch skaliert werden ; a = a * 128 ; a = 234 ; die
P2LED0 X2 14 R29 X2 RSTN X1 C1 C2 48 FXSD1 3 8 FXSD2 13 0 1-2 for FLL, 3 1 3-4 for MLL/RLL J12 1 1 11 A A 2 2 D 2 2 R30 18PF Y1 18PF M P MP D E D M P N M P +3.3A 25/50MHz 6 FXSD1 1 2 R R T T V I V R R A T T 1K R16 3 4 +1.8A 1 2 3 4 5 6 7 8 9 0 1 2 0 R16, R30 is NC if 25/50MHz crystal is used. 1 1 1 R17
5.05c (2001-07-08) with MANY_PORTS SHARE_IRQ SERIAL_PCI enabled ttyS00 at 0xbe000010 (irq = 100) is a 16550A ttyS01 at 0xbe000000 (irq = 99) is a 16550A ttyS02 at 0xbe000020 (irq = 122) is a 16550A Kboxdev: registered device with major 120 Software Watchdog Timer: 0.05, timer margin: 60 sec RAMDISK driver
06 Chipped area 2.5 glass 1/2t＜z≦2t Not exceed 1/3k x≦1/8a ☉If there are 2 or more chips, x is total length of each chip. 6.1.2 Corner crack: z: Chip thickness y: Chip width x: Chip length Z≦1/2t Not over viewing x≦1/8a area 1/2t＜z≦2t Not exceed 1/3k x≦1/8a
06 Chipped area 2.5 glass 1/2t＜z≦2t Not exceed 1/3k x≦1/8a ☉If there are 2 or more chips, x is total length of each chip. 6.1.2 Corner crack: z: Chip thickness y: Chip width x: Chip length Z≦1/2t Not over viewing x≦1/8a area 1/2t＜z≦2t Not exceed 1/3k x≦1/8a
BDM Value Unit Time
198 DC 13.80 mA 16:16:01
199 DC 13.80 mA 16:16:01
200 DC 13.79 mA 16:16:02
201 DC 13.78 mA 16:16:03
202 DC 13.77 mA 16:16:04
203 DC 13.76 mA 16:16:05
204 DC 13.76 mA 16:16:05
205 DC 13.75 mA 16:16:06
206 DC 13.75 mA 16:16:06
207 DC 13.75 mA 16:16:07
208 DC 13.66 mA 16:16:08
209 DC 00.00 mA 16:16:09
210 DC 00.00 mA 16:16:09
211 DC 00.00 mA 16:16:10
212 DC 00.00 mA 16:16:10
213 DC 00.00 mA 16:16:11
214 DC 00.00 mA 16:16:11
215 DC 00.00 mA
Pin Bias Current FB Voltage 20 20 1.250 18 18 1.245 16 16 )1.240 ) ) ( n 14 ( 14 E1.235 T 12 T 12 A1.230 E E L R 10 R 10 V1.225 U U K S 8 S 8 A1.220 I I D B 6 B 6 E1.215 F 4 4 1.210 2 2 1.205 0 0 1.200 –50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100 TEMPERATURE (°C) TEMPERATURE
Parameter FQP50N06L Unit VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous CT 25°C) 52.4 A - Continuous CT = 100°C) 37.1 A IDM Drain Current - Pulsed (Note 1) 210 A V GSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ I Avalanche Current (Note 1) 52.4 A AR EAR
128(RGB) X 128 Dots HSYNC VSYNC VSYNCO OSCA1 OSCA2 BPRE GPRE RIREF Figure 1: Block diagram LPST128128A00-T4 Page 1 Rev: 1.0 Jun 2005 4. DIMENSIONALOUTLINE 1 0 5 8 0 0 8 - 2 1 e n O - J E 2 9 F 4 1 A 2 s 8 n 1 E c S S h L I l s n i a 1 m F P m : 0 0 1 A A 1 m . ± p ) c 2 P ( ° T i l 6 ° 0 si c 0 8 T m
128(RGB) X 128 Dots HSYNC VSYNC VSYNCO OSCA1 OSCA2 BPRE GPRE RIREF Figure 1: Block diagram LPST128128A00-T4 Page 1 Rev: 1.0 Jun 2005 4. DIMENSIONALOUTLINE 1 0 5 8 0 0 8 - 2 1 e n O - J E 2 9 F 4 1 A 2 s 8 n 1 E c S S h L I l s n i a 1 m F P m : 0 0 1 A A 1 m . ± p ) c 2 P ( ° T i l 6 ° 0 si c 0 8 T m
values obtained with the two standards are often related (good IEC61000-4-4 specification leads to a high static dV/dt withstanding). Using the following test set-up (see Figure 8), EFT immunity of phototriac “A” is measured. To better evaluate the influence of the phototriac, an ACST210-8FP is chosen
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