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NECCS04393-1.pdf
1.5 VDD VDD CES OEH V IH CE VIL tCEH PW V IH PGM VIL tOES tLW V IH OE VIL 58 Data Sheet U11776EJ2V1DS µPD78P0308, 78P0308Y PROM Write Mode Timing (Byte Program Mode) Program Program verify A0 to A16 tAS tF Hi-Z Hi-Z Hi-Z D0 to D7 Data input Data output tDS tDH tAH VPP VPP V DD VPS VDD + 1.5 VDD V DD
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Bootloader230.a51
DBIT 1 ; new extension bit for disable verify on bootloader dseg at 0x21 ; gloabal vars wValueLo: ds 1 ; 0x21 BootKey: ds 8 ; 0x22 Marker0: ds 1 ; 0x2A rlen: ds 1 ; 0x2B reqlen: ds 1 ; 0x2C cmdbuffer: ds 64 ; 0x2D ds 2 ; 0x6d spare bRequest: ds 1 ; 0x6F SnSum: ds 1 ; 0x70 DescAddr: ds 2 ; 0x71 CAddr: ds 2 ; 0x73 Marker1: ds 1 STACK: xseg at 0 EP0_BUFFER: ds 8 ; 0x0000 the control endpoint ds 4 ; spare EP2_BUFFER: ds 64 ; 0x000C bulk out Response: ds 64 ; 0x004C bulk in cseg at StartAddress ; bootloader
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MCP1703_MIC.pdf
Loggers 3-Pin SOT-89 SOT-223-3 Related Literature VIN • AN765, “Using Microchip’s Micropower LDOs”, DS00765, Microchip Technology Inc., 2002 • AN766, “Pin-Compatible CMOS Upgrades to BiPolar LDOs”, DS00766, 1 2 3 1 2 3 Microchip Technology Inc., 2002 GND VINVOUT V IN GND V OUT • AN792, “A Method to Determine
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STD60N55F3.pdf
= 10V, I = 32A DS(on) resistance GS D 6.5 8.5 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit (1) Forward transconductance V =25V, I =32A 50 S gfs DS D Ciss Input capacitance 2200 pF C Output capacitance
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ddm_hopt_schuler_862.pdf
High = locking Low = unlocking 13 GND 14 nc not connected 15 RDP See decoder below Read data track 2 (75 bpi) 16 RCP See decoder below Read clockk 2 (75 bpi) 17 GND locking 18 S3 Status locking Low = aktiv (locking) 19 Locking voltage Locking +4 bis +5 VDC 20 DS Magnetic read enable 21 nc Not connected
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irf9z34n.pdf
V GS = 0V, f = 1MHz ID = -10A C iss = Cgs + C gd , Cds SHORTED ) C rss = Cgd V 1000 C = C + C ( V DS = -44V oss ds gd g16 V DS = -28V ) t p o ( 800 C iss V c e n r12 i u c 600 C oss S a o a - 8 C t , 400 a C G C rss , G4 200 V - FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 -VDS , Drain-to-Source
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DS_IRLZ44N-IR.pdf
, Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLZ44NPbF 50 RD V DS VGS 40 D.U.T. ) R G ( +V n - DD e 30 u 5.0V C i Duty Factor ≤
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IRLZ44N-IR_Reichelt.pdf
, Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLZ44NPbF 50 RD V DS VGS 40 D.U.T. ) R G ( +V n - DD e 30 u 5.0V C i Duty Factor ≤
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P-MOSFET_IRF9Z34N.pdf
V GS = 0V, f = 1MHz ID = -10A C iss = Cgs + C gd , Cds SHORTED ) C rss = Cgd V 1000 C = C + C ( V DS = -44V oss ds gd g16 V DS = -28V ) t p o ( 800 C iss V c e n r12 i u c 600 C oss S a o a - 8 C t , 400 a C G C rss , G4 200 V - FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 -VDS , Drain-to-Source
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BME280_Datasheet.pdf
settings Current consumption 581 µA RMS Noise 0.3 Pa / 2.5 cm Data output rate 83 Hz Filter bandwidth 1.75 Hz Response time (75%) 0.3 s 3.6 Noise The noise depends on the oversampling and, for pressure and temperature, on the filter setting used. The stated values were determined in a controlled environment
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RGB_Bildsensor_-_D100997D.pdf
gate clock 2 (for Green) Caution Connect the No connection pins (NC) to GND. Data Sheet S15330EJ4V0DS 3 µPD8872 PHOTOCELL STRUCTURE DIAGRAM 2.75µm 2.5µm m 5 . Channel stopper 5 Aluminum shield PHOTOCELL ARRAY STRUCTURE DIAGRAM (Line spacing) 5.25 µm Blue photocell array 5.25 µm 2 lines (10.5µm) 5.25µm
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XCS20-3VQ100C.pdf
GCK7 (2) VCC P54 P51 N13 P73 - PROGRAM P55 P52 M13 P74 - I/O - - D10 P113 8 I/O (D7 ) P56 P53 L12 P75 259(3) I/O - - C10 P114 11 I/O (CS1 ) P79 P80 B10 P115 14 DS060 (v1.8) June 26, 2008 www.xilinx.com 67 Product Specification Spartan and Spartan-XL FPGA Families Data Sheet R XCS10 and XCS10XL Device
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HYCON-Tech-HY2213-BB3A_C113632.pdf
Technology Corp DS-HY22Page 12EN HY2213 1 Cell Li Battery Charge Balance IC 13.2.Tape & Reel Information ---SOT-23-6 (Type 2) Description：Unit: mm。 13.2.1. Reel Dimensions A W1 13.2.2. Carrier Tape Dimensions D0 P0 P2
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SpartanXL.pdf
Controlled by Configuration Program Multiplexer Controlled by Configuration Program DS060_05_041901 DS060_04_081100 Figure 5: IOB Flip-Flop/Latch Functional Block Diagram Figure 4: CLB Control Signal Interface The four internal control signals are: IOB Input Signal Path The input signal
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OZ960_O2MICRO.pdf
512 E 7.40 7.50 7.60 291 295 299 e 1.27 BSC 50 BSC H 10.00 10.31 10.65 394 406 419 θ h 0.25 0.66 0.75 10 26 30 L L 0.51 0.76 1.02 20 30 40 DETAIL "X" Y 0.075 3 θ 0° 8° 0° 8° OZ960-DS-1.6 Page 10 OZ960 PACKAGE INFORMATION (DIP 300mil) D θ 1 E B E e H A SEATING A PLANE L A 0.018typ. 0.100typ. 0.060typ.
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OZ960.pdf
512 E 7.40 7.50 7.60 291 295 299 e 1.27 BSC 50 BSC H 10.00 10.31 10.65 394 406 419 θ h 0.25 0.66 0.75 10 26 30 L L 0.51 0.76 1.02 20 30 40 DETAIL "X" Y 0.075 3 θ 0° 8° 0° 8° OZ960-DS-1.6 Page 10 OZ960 PACKAGE INFORMATION (DIP 300mil) D θ 1 E B E e H A SEATING A PLANE L A 0.018typ. 0.100typ. 0.060typ.
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OZ960.pdf
512 E 7.40 7.50 7.60 291 295 299 e 1.27 BSC 50 BSC H 10.00 10.31 10.65 394 406 419 θ h 0.25 0.66 0.75 10 26 30 L L 0.51 0.76 1.02 20 30 40 DETAIL "X" Y 0.075 3 θ 0° 8° 0° 8° OZ960-DS-1.6 Page 10 OZ960 PACKAGE INFORMATION (DIP 300mil) D θ 1 E B E e H A SEATING A PLANE L A 0.018typ. 0.100typ. 0.060typ.
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SST89x516.pdf
TA= 0°C to +70°C 80 µA TA= -40°C to +85°C 90 µA T0-0.1 25093 ©2013 Silicon Storage Technology, Inc. DS25093B 02/13 75 FlashFlex MCU SST89E516RD2 / SST89E516RD SST89V516RD2 / SST89V516RD Data Sheet 1. Under steady state (non-transient) conditions, OL must be externally limited as follows: Maximum I per
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datasheet.pdf
Typ. Max. Unit Drain-source V (BR)DSS ID= 250µA, VGS =0 30 V breakdown voltage Zero gate voltage V DS= max ratings 1 µA IDSS V DS= max ratings, drain currentGSV= 0) 10 µA TC = 125°C I Gate-body leakage V = ± 20V ±100 nA GSS current DS = 0) GS V GS(th) Gate threshold voltage V DS= VGS, D = 250µA 1 V Static drain-source on V GS= 10V, D = 11A 0.038 0.05 Ω R DS(on) resistance V = 5V, I = 11A 0.045 0.06 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward gfs(1) V DS= 15V, D= 11A 7 S transconductance C Input capacitance 330 pF
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IRF9Z34-Vishay.pdf
Source-Drain Diode Forward Voltage 20 3 ) D = - 18 A 10 Operation in this area limited ( 5 by R e V DS= - 48 V DS(on) g 16 ) l V = - 30 V ( 2 V DS t 2 e e 10 10 µs r 12 r 5 o u 100 µs S n o a 2 - 8 r 1 ms t , 10 G I , 4 - 5 10 ms G TC= 25 °C V For test circuit 2 TJ= 175 °C - see figure 13 Single Pulse
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_FET-P__JCET_AO3401.pdf
Plastic-Encapsulate MOSFETS AO3401 P-Chan nel Enhanceme t Mode Field Ef fectT ransistor V (BR)SS R DS(on)MAX D SOT-23 65m Ω @-10V -30V 75mΩ @-4.5V -4.2A 1. GAT 90m Ω @-2.5V 2. SOURCE 3. DRAIN FEATURE APPLICA TION z High dense cell design for extremely low RDS(ON) z Load/Power Switching z Exceptional
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Datasheet_LT3433.pdf
SWH A 34 A 34 S 0.8 ( ( R I / O 0.7 S 31 O 31 C RSWL I I W 0.6 S 28 28 0.5 0.4 25 25 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 3433 G12 3433 G13 3433 G14 U U U PI FU CTIO S SGND (Pins 1, 8, 9, 16): Low Noise Ground
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ds1621_m162kb_mit_1621_kbd.bas
Const I2cport = Pcf8574p 'Defines the address of the I/O Expander Const I2c_key = Pcf8574ap Const Ds1621 = &H90 'Grundadresse DS1621 Const Ds1621_readtemp = &HAA Const Ds1621_config = &HAC Const Ds1621_start_convert = &HEE Const Ds1621_stop_convert = &H22 ' --- Tastendefinition Const Esc = "#" Const
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RF_PICKIT.pdf
conveyed, implicitly or otherwise, under any intellectual property rights. Accuron, Application Maestro, dsPIC, dsPICDEM, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net
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MOSFET-FCPF20N60.pdf
Leakage Current, Forward VGS = 30V, DS = 0V -- -- 100 nA M I Gate-Body Leakage Current, Reverse V = -30V, V = 0V -- -- -100 nA O GSSR GS DS S On Characteristics F E VGS(th) Gate Threshold Voltage VDS = VGS, D = 250µA 3.0 -- 5.0 V T R DS(on
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NL6448AC33-29.pdf
exceed T a= 50°C, 85% relative humidity level. Note Measured at the display area Data Sheet EN0439EJ1V0DS00 5 NL6448AC33-29 ELECTRICAL CHARACTERISTICS (1) Logic, LCD driving T = 25°C Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply voltage VCC 3.0 3.3 3.6 V VCC = 3.3 V (4.75) (5.0) (5.25) (VCC= 5.0 V)
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LG_L1733TR_L1933TR_Monitor_Service_manual.pdf
C528 0CK104CF56A 0603B104K160CT100nF10%16V D704 0DS226009AA KDS2261.2V85V300MA2A4NS C529 0CK104CF56A 0603B104K160CT100nF10%16V D705 0DS226009AA KDS2261.2V85V300MA2A4NS C530 0CK104CF56A 0603B104K160CT100nF10%16V D706 0DS226009AA KDS2261.2V85V300MA2A4NS C531 0CK104CF56A 0603B104K160CT100nF10%16V D707 0DS226009AA KDS2261.2V85V300MA2A4NS C532 0CK104CF56A 0603B104K160CT100nF10%16V D708 0DS226009AA KDS2261.2V85V300MA2A4NS C533 0CK104CF56A 0603B104K160CT100nF10%16V D709 0DS226009AA KDS2261.2V85V300MA2A4NS
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LMC7111BIM5X.pdf
3V L DS012352-25 DS012352-26 DS012352-27 Sourcing Output vs Sinking Output vs Gain and Phase vs Output Voltage Output Voltage Capacitive Load @ 3V DS012352-28 DS012352-29 DS012352-30 Gain and Phase vs Gain and
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LMC7111BIM5X.pdf
3V L DS012352-25 DS012352-26 DS012352-27 Sourcing Output vs Sinking Output vs Gain and Phase vs Output Voltage Output Voltage Capacitive Load @ 3V DS012352-28 DS012352-29 DS012352-30 Gain and Phase vs Gain and
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BUZ71A.pdf
Source Breakdown Voltage BV DSS ID= 250µA, VGS = 0V 50 - - V Gate to Threshold Voltage VGS(TH) VGS = V DS DI = 1mA (Figure 9) 2.1 3 4 V o Zero Gate Voltage Drain Current IDSS TJ= 25 C, VDS = 50V, GS = 0V - 20 250 µA o TJ= 125 C, V DS = 50V, GS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS =
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MRF150.pdf
Zero Gate Voltage Drain CurrDSt= 50 V,GS = 0) DSS — — 5.0 mAdc Gate–Body Leakage CurrentGSV= 20 V, DS = 0) GSS — — 1.0 Adc ON CHARACTERISTICS Gate Threshold Voltage (= 10 V, I = 100 mA) V 1.0 3.0 5.0 Vdc DS D GS(th) Drain–Source On–Voltage (V= 10 V, I = 10 A) V 1.0 3.0 5.0 Vdc GS D DS(on) Forward Transconductance (V= 10 V, I = 5.0 A) g 4.0 7.0 — mhos DS D fs DYNAMIC CHARACTERISTICS Input CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Ciss — 400 — pF Output CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Coss — 240 — pF Reverse Transfer CapacitancDS(= 50 V,GS =
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sla7024m.pdf
Symbol Test Conditions Min Typ Max Units FET Leakage Current I V = 100 V, V = 44 V — — 4.0 mA DSS DS CC FET ON Voltage V (SLA7024M & SMA7029M) V = 14 V, I = 1 A — — 600 mV DS(ON) CC OUT (SLA7026M) V CC = 14 V, IOUT = 3 A — — 850 mV FET ON Resistance r (SLA7024M & SMA7029M) V = 14 V, I = 1 A — — 600
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LTC1477_LinearTechnology.pdf
FEATURES DESCRIPTION Extremely Low R Switch: 0.07 The LTC 1477/LTC1478 protected high side switches DS(ON) No Parasitic Body Diode provide extremely low R DS(ON) switching with built-in Built-In Short-Circuit Protection: 2A protectionagainstshort-circuitandthermaloverloadcon- Built-In Thermal Overload
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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irlml2502.pdf
= 4.0A fs DS D ––– ––– 1.0 VDS= 16V, VGS= 0V IDSS Drain-to-Source Leakage Current ––– ––– 25 µA V = 16V, V = 0V, T = 70°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS= -12V GSS Gate-to-Source Reverse Leakage
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L6203.pdf
Normalized Quiescent Current vs. Frequency Figure 3: Typical Normalized I S vs. VS Figure 4: Typical R DS (ON)vs. V S V ref 5/20 L6201 - L6202 - L6203 Figure 5: Normalized R DS (ON)at 25 C vs. Temperature Typical Values Figure 6a: Typical Diode Behaviour in Synchro- Figure 6b: Typical Diode Behaviour in
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cd00000089-1795323.pdf
Normalized Quiescent Current vs. Frequency Figure 3: Typical Normalized I S vs. VS Figure 4: Typical R DS (ON)vs. V S V ref 5/20 L6201 - L6202 - L6203 Figure 5: Normalized R DS (ON)at 25 C vs. Temperature Typical Values Figure 6a: Typical Diode Behaviour in Synchro- Figure 6b: Typical Diode Behaviour in
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cd00000089-1795323.pdf
Normalized Quiescent Current vs. Frequency Figure 3: Typical Normalized I S vs. VS Figure 4: Typical R DS (ON)vs. V S V ref 5/20 L6201 - L6202 - L6203 Figure 5: Normalized R DS (ON)at 25 C vs. Temperature Typical Values Figure 6a: Typical Diode Behaviour in Synchro- Figure 6b: Typical Diode Behaviour in
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datenblatt_pic.pdf
C to +125°C) Minimum: mean – 3 (-40°C to +125°C) VIHTyp VIHMax 3.00 2.75 2.50 V IHMin 2.25 ) VILMax V ILTyp ( I2.00 V 1.75 1.50 1.25 1.00 V ILMin 0.75 0.50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V DD(V) DS35007B-page 70 © 2001 Microchip Technology Inc. PIC16F84A 11.0 PACKAGING INFORMATION
in „Flußdiagramm Digitale stoppuhr auf PIC 16F84A“ · Mikrocontroller und Digitale Elektronik ·
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16F84.pdf
C to +125°C) Minimum: mean – 3 (-40°C to +125°C) VIHTyp VIHMax 3.00 2.75 2.50 V IHMin 2.25 ) VILMax V ILTyp ( I2.00 V 1.75 1.50 1.25 1.00 V ILMin 0.75 0.50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V DD(V) DS35007B-page 70 © 2001 Microchip Technology Inc. PIC16F84A 11.0 PACKAGING INFORMATION
in „Probleme mit Taktversorgung auf Steckbrett“ · Mikrocontroller und Digitale Elektronik ·
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tc4420.pdf
2500pF — 25 35 nsec R L tF Fall Time Figure 1, L = 2500pF — 25 35 nsec t Delay Time Figure 1 — 55 75 nsec D1 tD2 Delay Time Figure 1 — 55 75 nsec Power Supply IS Power Supply Current VIN = 3V — 0.45 1.5 mA VIN = 0V — 55 150 µA V DD Operating Input Voltage 4.5 — 18 V TC4420/9-6 10/18/96 2 © 2001 Microchip
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tps2020_1_.pdf
(IN)= 2.7 V 35 −1 −50 −25 0 25 50 75 100 125 150 −50 −25 0 25 50 75 100 125 150 TJ− Junction Temperature − °C TJ− Junction Temperature − °C Figure 27 Figure 28 SUPPLY CURRENT (ENABLED) SUPPLY CURRENT (DISABLED) vs vs INPUT VOLTAGE INPUT
in „DC/DC als Sicherung für AT90USB <-> PC“ · Mikrocontroller und Digitale Elektronik ·
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Weller.pdf
P1-24 1 6 6 1 P1BC 1 1 5 R7 2.2k 3 3 R8 2.2k 5 2 2 4 4 P1BC 2 R9 2.2k 4 2 2 4 R10 2.2k 2 P1-24 CNY75B 3 R12 C10 D8 U4 R11 10k 10uF/16V BZX84C12 CNY75B + C7 10k + B D7 10uF/16V Q51 C8 C9 Q6 1 B BZX84C12 IRFZ44N 100p 100p IRFZ44N 1 3 3 1 Q7 311 C12 3 Q8 IRFZ44N 100p 100p IRFZ44N 1 1 4 2 2 4 P1B A A Title
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PAM8302A.pdf
45 50 — dB Dynamic Range DYN f = 20 to 20kHz 85 90 — dB Signal to Noise Ratio SNR f = 20 to 20kHz 75 80 — dB No A-Weighting — 180 300 Noise V N A-Weighting — 120 200 µV Oscillator Frequency OSC — 200 250 300 kHz Drain-Source On-State P MOSFET — 0.45 0.50 Ω Resistance RDS(ON) DS = 100mA N MOSFET — 0.20
in „PAM8302A Dimensionierung Ci und R“ · Mikrocontroller und Digitale Elektronik ·
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24LC256_32k_I2C-EEPROM.pdf
for 24FC256. 2004 Microchip Technology Inc. DS21203M-page 21 24AA256/24LC256/24FC256 NOTES: DS21203M-page 22 2004 Microchip Technology Inc. 24AA256/24LC256/24FC256 ON-LINE SUPPORT SYSTEMS INFORMATION AND Microchip provides on-line support on the
in „immer noch EEprom“ · Mikrocontroller und Digitale Elektronik ·
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MBI5026Datenblatt_V0.9.pdf
Current 2 IOUT2 VDS0.8V Rext60 Ω - 52.5 - mA OL=52.5mA Current Skew dIOUT2 V =0.8V Rext60 Ω - ±1 ±3 % DS Output Current vs. %/dV DS VDS within 1.0V and 3.0V - ±0.1 - % / V Output Voltage Regulation Output Current vs. Supply Voltage Regulation %/dV DD VDD within 4.5V and 5.5V - ±1 - % / V Pull-up Resistor
in „Ansteuerung von ca. 1200 LED´s“ · Mikrocontroller und Digitale Elektronik ·
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NTMFS4C09N.pdf
ISS Output Capacitance C 610 OSS VGS = 0 V, f = 1 MHz,DS= 15 V pF Reverse Transfer Capacitance C 126 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.101 RSS ISS GS DS Total Gate Charge Q 10.9 G(TOT) Threshold Gate Charge Q 1.9 G(TH) Gate−to−Source Charge Q 3.4 nC GS VGS = 4.5 V, DS = 15 V;DI = 30 A Gate−to−Drain Charge Q 5.4 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V; I = 30 A 22.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay
in „Kontrolle Eagle Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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BME680.pdf
reserved |Data subject not change without notice | Printed in Germany Document number: BST-BME680-DS001-00 Revision_1.0_072017 Bosch Sensortec | BME680 Datasheet 43 | 50 7.3 Package dimensions Picture 13: Package dimensions for top, bottom and side view Document number: BST-BME680-DS001-00 Revision_
in „PIR-Sensor wird von BME680 gestört, warum?“ · Mikrocontroller und Digitale Elektronik ·
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BME680.pdf
reserved |Data subject not change without notice | Printed in Germany Document number: BST-BME680-DS001-00 Revision_1.0_072017 Bosch Sensortec | BME680 Datasheet 43 | 50 7.3 Package dimensions Picture 13: Package dimensions for top, bottom and side view Document number: BST-BME680-DS001-00 Revision_
in „BME680 Berechnung Temperatur Luftfeuchtigkeit Druck Gas Fragen Initialisierung Assembler ASM ATmega8“ · Mikrocontroller und Digitale Elektronik ·
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504925-panasonic-aqz202-photomos-relais-1-st-1-schliesser-60-vdc-60-vac-3000-ma-polzahl-4.pdf
Notes: Load voltage and current of AC/DC type: Peak AC/DC. Load voltage and current of DC type: DC ds_x615_en_aqz10_20: 181206J 1 Power PhotoMOS (AQZ10P, 20P) RATING 1. AC/DC type 1) Absolute maximum ratings (Ambient temperature: 25°C 77°F) Item Symbol AQZ202 AQZ205 AQZ207 AQZ204 Remarks LED forward
in „Suche Halbleiterelement als Ersatz für Relai in Radar-Bewegungsmelder“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
504925-panasonic-aqz202-photomos-relais-1-st-1-schliesser-60-vdc-60-vac-3000-ma-polzahl-4.pdf
Notes: Load voltage and current of AC/DC type: Peak AC/DC. Load voltage and current of DC type: DC ds_x615_en_aqz10_20: 181206J 1 Power PhotoMOS (AQZ10P, 20P) RATING 1. AC/DC type 1) Absolute maximum ratings (Ambient temperature: 25°C 77°F) Item Symbol AQZ202 AQZ205 AQZ207 AQZ204 Remarks LED forward
in „Welche Eigenschaften haben Solid State Relais, SSR ?“ · Offtopic ·