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PDF
datasheet.pdf
5.25 V Supply voltage for LED V LED -0.3 to +5.5 V Supply voltage for LED V LED 4.5 5.0 5.25 V Input voltage V I -0.3 to Vcc+0.3 V IC current dissipation ICC ------ 15 40 mA Turn-on time tON 1 ms LEDcurrentdissipation
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PDF
KS76.pdf
Frequenzbereich • Linear frequency range f3 dB 0,12..33k 0,13..24k 0,12..33k 0,13..24k Hz f10 % 0,25..26k 0,3..19k 0,25..26k 0,3..19k Hz f 0,35..24k 0,4..18k 0,35..24k 0,4..18k Hz 5 % Resonanzfrequenz • Resonant frequency fr >50(+25dB) >32(+25dB) >50(+25dB) >32(+25dB) kHz Querrichtungsfaktor • Transverse
in „Beschleunigungsmessung“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
P-MOSFETsi3445dv.pdf
≤ 5 s 62.5 Maximum Junction-to-Ambient a RthJA °C/W Steady State 106 Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. Document Number: 70820 www.vishay.com S09-0766-Rev. C, 04-May-09 1 Si3445DV Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min
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PDF
Multi-CB-Leiterplatten_Basic-Design-Rules.pdf
Bohrerdurchmesser ≥ 0,3 mm Lötstopp Parameter d2 > 5µm Schichtdicke d1: auf der Leiterplatte > 10µm < 25µm d2: über der Leiterbahnkant> 5µm < 25µm d1 > 10µm Durchschlagfestigkeit 500VDC min. 3. Positionsdruck Positionsdruck Parameter Schrifthöhe Optimale Schriftstärmin. Schriftstärke* Abstand 1,2mm 150µm
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PDF
data.pdf
0 0.5 25 V = 14V, T = 25 C dss1 o cc j @Tj=25 C A dss2 Drain to source leakage current 0 5 50 Vcc = 40V, j = 25 C o @Tj=25 C V clamp 1 Drain to source clamp voltage 1 47 52 56 d = 20mA (see Fig.3 & 4) V clamp
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PDF
RAC02-GB-Netzteil.pdf
www.recom-power.com REV.: 3/2019 PA-2 RAC02-GB AC/DC Converter Series Specifications (measured @ Ta= 25°C, nom. Vin (115/230VAC), full load and after warm-up unless otherwise stated) REGULATIONS Parameter Condition Value Output Accuracy -25°C to +80°C ±6.0% max. Line Regulation -25°C to +80°C ±2.0% max
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PDF
si1402dh.pdf
C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 73328 www.vishay.com S-10-0645-Rev. B, 22-Mar-10 1 Si1402DH Vishay Siliconix SPECIFICATIONS T = 25 °C, uJless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max.
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AK5388AEQ.pdf
/fs Group Delay Distortion GD 0.01 s ADC Digital Filter (HPF): Frequency Response (Note 9) 3dB FR 1.0 Hz 0.1dB 6.5 Hz FILTER CHARACTERISTICS (fs=96kHz) (Ta=25C; AVDD1/2=4.75 5.25V; DVDD1/2=3.0 3.6V; DFS1 = “L”, DFS0 = “H”) Parameter Symbol min typ max Unit ADC Digital Filter (Decimation LPF
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PDF
Transistor_2N3904.pdf
peak collector current − 300 mA I peak base current − 100 mA BM Ptot total power dissipation T amb≤ 25 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999
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Datei
e3d_ic.inc
Seite box{<-6,8.3,-5>,<6,10,5>} //Aufkleberfläche*/ cylinder{<-20.5,9.0,-9.5>,<-20.5,10.0,-9.5> 0.25} texture{e3d_tex_ic_body_1} } //Holo-Aufkleber #local w=0.1; union { cylinder{<5.25,8.3,4.25>,<5.25,8.3+w,4.25>0.5} cylinder{<5.25,8.3,-4.25>,<5.25,8.3+w,-4.25>0.5} cylinder{<-5.25,8.3,4.25>,<-5.25,8.3+w,4.25>0.5} cylinder{<-5.25,8.3,-4.25>,<-5.25,8.3+w,-4.25>0.5} box{<-5.25,8.3,-4.75>,<5.25,8.3+w,4.75>} box{<-5.75,8.3,-4.25>,<5.75,8.3+w,4.25>} texture{T_Chrome_5C} } text{ttf global_fontfile_arial_bold "@
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PIC.pdf
be considered depending on your application. Vdd ADC Floating point (volts) Integer (millivolts) 1.25 838 1.25 (0.10%) 1152 (7.84%) 1.5 699 1.5 (0.01%) 1408 (6.13%) 1.75 599 1.75 (0.03%) 1664 (4.91%) 2 524 2.00 (0.05%) 1920 (4.00%) 2.25 466 2.25 (0.01%) 2176 (3.29%) 2.5 419 2.50 (0.10%) 2432 (2.72%) 2.75 381 2.75 (0.08%) 2688 (2.25%) 3 349 3.00 (0.15%) 2944 (1.87%) 3.25 322 3.25 (0.20%) 3200 (1.54%) 3.5 299 3.50 (0.20%) 3456 (1.26%) 3.75 279 3.75 (0.22%) 3712 (1.01%) 4 262 4.00 (0.05%) 3968 (0.80%) 4.25 246 4.26 (0.29%) 4224 (0.61%
in „Aref Spannung, was ist besser?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DMN32D2LDF__KDV_ds31238.pdf
PROTECTED D2 D1 D2 D1 TOP VIEW BOTTOM VIEW TOP VIEW Schematic Diagram Maximum Ratings Q , Q 1 2 @T A 25°C unless otherwise specified Characteristic Symbol Value Unit Drain Source Voltage 30 V VDSS Gate-Source Voltage VGSS ±10 V Drain Current (Note 1) I 400 mA D Thermal Characteristics Q , Q 1 2 @T A 25
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PDF
HMYX_D8575N.pdf
Marking Device Package Quantity HMD8575N D8575N TO-252 2500/Reel Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source VoltaGS (V =0V） 30 V VGS Gate-Source VoltVDS=0V) ±20 V 1 60 A ID (DC) Drain Current-Continuous (Tc =25℃) Drain Current-Continuous (Tc =100℃) 38 A 2 DM (
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PDF
SOT363.pdf
the original dimensions) UNIT A A1 b c D E e e H L Q v w y max p 1 E p mm 1.1 0.1 0.30 0.25 2.2 1.35 1.3 0.65 2.2 0.45 0.25 0.2 0.2 0.1 0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15 REFERENCES OUTLINE EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION SOT363 SC-88 04-11-08 06-03-16 Fig. 1. Package
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PDF
bts117.pdf
the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4(one layer, 70µm thick) copper area for Drain connection. PCB mounted vertical without blown air. Page 2 19.05.2000 BTS 117 Electrical Characteristics Parameter Symbol Values Unit at Tj=25°C, unless
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PDF
bts117.pdf
the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4(one layer, 70µm thick) copper area for Drain connection. PCB mounted vertical without blown air. Page 2 19.05.2000 BTS 117 Electrical Characteristics Parameter Symbol Values Unit at Tj=25°C, unless
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PDF
BSP149_Rev1.1.pdf
C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C 0.66 A D A TA=70 °C 0.53 Pulsed drain current ID,pulse TA=25 °C 2.6 D =0.66 A, Reverse diode dv/dt dv/dt VDS=160 V, 6 kV/µs di/dt=200 A/µs, T =150 °C j,max Gate source voltage V GS ±20 V ESD sensitivity
in „BF246B probleme“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BTS117.pdf
the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4(one layer, 70µm thick) copper area for Drain connection. PCB mounted vertical without blown air. Page 2 19.05.2000 BTS 117 Electrical Characteristics Parameter Symbol Values Unit at Tj=25°C, unless
in „Leistungsschalter für MC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RXV667.pdf
BASSR1 ATT 0/-6/-12/-18dB ADCR 54 27 TREL SUB2 AGND 55 26 BASSL2 MAIN B I I INR1 56 S MU M Bass/Treble 25 BASSL1 S 0~-95dB, -14~+14dB +42~0dB INL1 57 (0.5dBstep) (2dBstep) Bypass0.5dBstep) 24 FRC INR2 58 Tone+MIX 23 Tone FR Pre-OUT INL2 SUB +42~0dB FROUT 59 Tone+MIX (0.5dBstep)22 Tone INR3 60 Tone 21 AGND
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PDF
LRTB_GVTG_15_.pdf
125 °C j Junction temperature Durchlassstrom (min.) I - 5 5 mA F Forward current (max.) 40 50 50 (TA=25°C) Stoßstrom IFM 100 300 300 mA Surge current tp= 10 s,D = 0.005, TA=25°C Sperrspannung 2)Seite 27 V 12 5 V 2) page 27 R Reverse voltage (TA=25°C) 2018-03-29 3 LRTB GVTG Kennwerte Characteristics (TA
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PDF
EP92A2E-Explore.pdf
Voltage a AVCC V DOS Differential Output Short Circuit Current VOUT = 0V; TX_TERM 3V3 rs 0 150 5 uA Po(25°C Ambient,nt2 RSEN_DIS = 0 1V8 20 uA IPD REG_VO1 is not connected, n t3V3 18 uA MCU stay in STOP mode) RSEN_DIS = 1 i 1V8 20 uA (25°C Ambient, RX0/TX are Active 1080p Resolution 3V3 85 mA CCD REXT_RES
in „HDMI-Audio, wie funktioniert es?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LMR-1700.pdf
Attach Attach /Pin in (mm) in (mm) lb (g) 1. 7-16 DIN Female Straight Jack EZ-1700-716FC 3190-388 <1.25:1 (2.5) NA Press Fit Clamp S/S 2.17 (55) 2.2 (55.9) 1.005( 455.9) 2. 7-16 DIN Male Straight PluEZ-1700-716MC 3190-387 <1.25:1 (2.5) Hex Press Fit Clamp S/S 2.17 (55) 2.2 (55.9) 1.055( 478.5) 3. N Female Straight Jack EZ-1700-NFC 3190-386 <1.25:1 (2.5) NA Press Fit Clamp S/S 2.17 (55) 2.2 (55.9) 1.087( 493.1) 4. N Male Straight Plug EZ-1700-NMC 3190-385 <1.25:1 (2.5) Hex Press Fit Clamp S/S 2.17 (55) 2.2 (55 .058(479.9) * Finishes: N=Nickel
in „GoPro WLAN-Kabel: 50 oder 75 Ohm?“ · HF, Funk und Felder ·
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PDF
Komarabathuni_Ravi_V.pdf
Eq. 2.9 [4] [6]. Figure 5 shows the beat frequency for triangular waveform and moving target. fb+ = fr− f d , (2.8) − fb = fr+ f d (2.9) 33 Frequency f ∆f f 0 Time 1 tm= fm Figure 5a: Triangular modulated FMCW waveform for moving target. Transmitted Signal (solid blue) and Received Signal (dotted red)
in „Auslesen eines Bosch LRR Radar“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IPB180P04P4.pdf
Q rr - 101 - nC 1)Current is limited by bondwire; with an = 1K/W the chip is able to carry 200A at 25°C. thJC 2)Specified by design. Not subject to production test. 3) VGS+5V/-16V according AEC; V GS16V for max 168h at T =J75°C 4)Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70
in „wie pMOSFET für Strombegrenzung kühlen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1-SPD30N06S2L-13_1-1.pdf
Package Ordering Code Marking SPD30N06S2L-13 P- TO252 -3-11 Q67040-S4254 2N06L13 Maximum Ratings, at T j 25 °C, unless otherwise specified Parameter Symbol Value Unit 1) Continuous drain current D A T =25°C 30 C 30 Pulsed drain current D puls 120 TC=25°C Avalanche energy, single pulse E 240 mJ AS D =30 A ,
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Mosfet_PHT8N06_Nkanal.pdf
1 ms 90 DC 1 85 10ms 80 100ms 75 70 0.11 10 VDS/V 100 5 10 ID/A 15 20 25 Fig.3. Safe operating area. T = 25 ˚C sp Fig.6. Typical on-state resistance, T = 25 ˚C. j D & I DM = f(V DS I DM single pulse; parameter t p R DS(ON) = f(ID); parameter V GS January 1998 4 Rev 1.100
in „FET Konfektionierung okay?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
4_5962837727081661443.PDF
Resistance; Junction−to−Lead RqJL 150 C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v T = 25C T = 100C V F J J (i = 0.1 Amps) 0.300 0.220 (i = 0.5 Amps) 0.385 0.330 F
in „Suche nach Schottky Diode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SMD_DIODE_SCHOTTKY_20V_MBR0520L_SOD_123_ONS.PDF
Resistance; Junction−to−Lead RqJL 150 C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v T = 25C T = 100C V F J J (i = 0.1 Amps) 0.300 0.220 (i = 0.5 Amps) 0.385 0.330 F
in „Welche alternative Diode ist verwendbar?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LED_RGB.pdf
Sperrschichttemperatur Tj + 125 °C Junction temperature Durchlassstrom IF 70 50 mA Forward current (TA=25°C) Stoßstrom I 100 300 300 mA FM Surge current tp= 10 µs,D = 0.005,TA=25°C 2)Seite 22 Sperrspannung VR 12 5 V Reverse voltage2) page 22 (T =25°C) A Leistungsaufnahme Ptot 195 210 mW Power consumption
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PDF
Netzteil_Darlington_v2.pdf
C C 1 AGND R14 1 OE V V R 0 ADC_SENSE N MISO 2 13 MISO_5V 8 OPA2197 0 O 2 3 A1 B1 12 3 IC2A AGND 5 25k 0.1% _ MOSI A2 B2 MOSI_5V 4 N R15 C25 U SCK 4 A3 B3 11 SCK_5V AGND 1 T 2 100n O GND ADC_CS 5 10 ADC_CS_5V 2 D A4 D B4 D1 N . 1.2-3.6V N 1.65-5.5V 4 BAT54FILMY G 3 G IC3 1M AGND D VCCA ≤ VCCB MOSI_5V
in „„Darlington mit Opamp“-Schaltung zum Schwingen bringen/Verständnisfrage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2N3820.PDF
0, f = 1.0KHz 16 pF * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2% Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W R Thermal Resistance, Junction to Ambient 357 °C/W θJA * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06” ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002 2 N Package Dimensions 3 8 2 0 TO-92 4.58 –0.15 0 0 ± . 4 0.46 ±0.10 4 ± 7 . 1 1.27TYP 1.27TYP 0.38 –0.05 [1.27
in „JFET - Beschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1-SPP30N03L.pdf
10 V, D = 28 A - 0.013 0.018 1 current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 2 Semiconductor Group SPP30N03L Electrical Characteristics, at T = 25 °C, unless otherwise specified
in „logic level MOSFET - falsche Gate threshold voltage?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
dt ≤ -77A/µDD ≤ V(BR)DSS max. junction temperature. ( See fig. 11 ) TJ≤ 150°C Starting J = 25°C, L = 35mH Pulse width ≤ 300µs; duty cycle ≤ 2%. R = 25 , I = -2.9A. G AS Surface mounted on FR-4 board, t ≤ 10sec. IRF7314 100 100 VGS TOP -7.50V TOP -7.50V -4.50V ) -4.50V A -3.50V A -3.50V t -3.00V
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7314.pdf
dt ≤ -77A/µDD ≤ V(BR)DSS max. junction temperature. ( See fig. 11 ) TJ≤ 150°C Starting J = 25°C, L = 35mH Pulse width ≤ 300µs; duty cycle ≤ 2%. R = 25 , I = -2.9A. G AS Surface mounted on FR-4 board, t ≤ 10sec. IRF7314 100 100 VGS TOP -7.50V TOP -7.50V -4.50V ) -4.50V A -3.50V A -3.50V t -3.00V
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Schaltplan eines Mikrocontroller-Netzteils
1N4004 V16 X2.2 E R34 C1 4700u R24 X2.2 C11 150p C8 BDX34B 0R22 R35 0R22 0-30V 3/4,5A V6 C9 150p R25 2N3055 X2.1 R27 X1.12 47R V7 PE Voltmeter R26 4.7k R28 4k7 C10 47n X1.10 R31 27k R32 20k S C8 47u LM723N V5 BC547C V4 10 100k R19 R20 22k R21 11k V2 12 V+ CL REF +IN -IN V- CMP S X1.4 68n C3 R13 47u
in „Universal Labornetzteil erreicht Spannung nicht“ · Analoge Elektronik und Schaltungstechnik · · Schaltpläne
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PDF
2N5460.pdf
Thesearesteadystatelimits.Thefactoryshouldbeconsultedonapplicationsinvolvingpulsedorlowdutycycleoperations. Thermal Characteristics TA= 25°C unless otherwise noted Symbol Characteristic Max Units 2N5460-5462 *MMBF5460-5462 PD Total Device Dissipation 350 225 mW Derate above 25°C 2.8 1.8 mW/°C RθJC Thermal Resistance, Junction to Case 125
in „Frage zu Ersatztyp für MMBF5460“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OAR.PDF
Tolerance TCR Inductance Number @ 85°C Range (mΩ) (±%) (±ppm/°C) (nH) (watts) OAR-1 1.0 3, 5, 10, *20, *25, 50 OAR-3 3.0 2.5, 5, 10, 15, 20, 25, *30, 50, 100 1, 2¹, 5 20 <10 OAR-5 5.0 3, 5, 10, *15, *20, *25, *50 Notes: ¹ ±2% tolerance available <0.005mΩ * Please contact factory for resistance values not listedes than other values listed Environmental Data Load Life (1000 hours @ 25°C) ΔR/R <1% Moisture (no load for 1000 hours) ΔR/R <1% Temperature Cycling (-40°C to +125°C for 1000 cycles) ΔR/R <1% OperatingTemperature -40°C to +125°C General Note IRC reserves the right to make
in „Shunt extrem teuer oder Preis gerechtfertigt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MMBV809.pdf
Voltage V R 20 Vdc Forward Current F 20 mAdc 3 Total Power Dissipation (Note 1) P SOT−23 (TO−236) @ T = 25°C D 225 mW 1 CASE 318 A STYLE 8 Derate above 25°C 1.8 mW/°C 2 Junction Temperature T +125 °C J Storage Temperature Range Tstg −55 to +125 °C MARKING DIAGRAM Maximum ratings are those values beyond which
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PDF
71858.pdf
RATINGS Parameter Symbol Typical Maximum Unit a t ≤ 10 s R 20 25 Maximum Junction-to-Ambient (MOSFET) Steady State thJA 55 65 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 2.0 2.6 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http
in „Mosfet! Wie temperatur berechnen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IPP120P04.pdf
Maximum ratings, at T =j5 °C, unless otherwise specified Parameter Symbol Conditions Value Unit 1) I T C25°C, -120 A Continuous drain current D V GS=-10V T C100°C, 2) -114 V GS=-10V Pulsed drain current) ID,pulse T C25°C -480 Avalanche energy, single pulse E AS ID=-60A 78 mJ Avalanche current, single pulse
in „Highside, FET wird heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1-5KE_TVS_Dioden.pdf
1.5KE15CA 1 12.8 14.3 15 15.8 1 21.2 71 27.2 368 8.4 5000 1.5KE18A 1.5KE18CA 1 15.3 17.1 18 18.9 1 25.2 59.5 32.5 308 8.8 4300 1.5KE22A 1.5KE22CA 1 18.8 20.9 22 23.1 1 30.6 49 39.3 254 9.2 3700 1.5KE24A 1.5KE24CA 1 20.5 22.8 24 25.2 1 33.2 45 42.8 234 9.4 3500 1.5KE27A 1.5KE27CA 1 23.1 25.7 27 28.4 1
in „Verstärker TAS5630“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MBRAF440T3-D-346517.pdf
CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Lead (Note 2) RθJL 25 °C/W Thermal Resistance − Junction−to−Ambient (Note 2) RθJA 90 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Symbol Value Unit Characteristic Maximum Instantaneous Forward Voltage (Note 3) V F T J 25°C TJ= 100°C V (F = 4.0 A) 0.485 0.435 Maximum Instantaneous Reverse Current R T J 25°C TJ= 100°C mA (VR= 40 V) 0.3 15 Product parametric performance is indicated in the Electrical Characteristics for
in „CRS Robotics A255 Roboterarm“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MBRAF440T3-D-346517.pdf
CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Lead (Note 2) RθJL 25 °C/W Thermal Resistance − Junction−to−Ambient (Note 2) RθJA 90 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Symbol Value Unit Characteristic Maximum Instantaneous Forward Voltage (Note 3) V F T J 25°C TJ= 100°C V (F = 4.0 A) 0.485 0.435 Maximum Instantaneous Reverse Current R T J 25°C TJ= 100°C mA (VR= 40 V) 0.3 15 Product parametric performance is indicated in the Electrical Characteristics for
in „Motorsteuerung mit L298N und Attiny“ · Mikrocontroller und Digitale Elektronik ·
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PDF
super.pdf
IEX3 gesetzt wird, wenn eine fallende (I3FR=0) oder eine steigende (I3FR=1) Flanke am Pin P1.0/INT3 entdeckt wird. I2FR Flankenwahl für den externen Interrupt 2 (steigende oder fallende Flanke). Es legt fest, ob das Request-Flag IEX2 gesetzt wird
in „Handyansteuerung über uC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
super.pdf
IEX3 gesetzt wird, wenn eine fallende (I3FR=0) oder eine steigende (I3FR=1) Flanke am Pin P1.0/INT3 entdeckt wird. I2FR Flankenwahl für den externen Interrupt 2 (steigende oder fallende Flanke). Es legt fest, ob das Request-Flag IEX2 gesetzt wird
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PDF
MAX9704_LP.pdf
95dB – Symmetrische Eingänge – einstellbare Verstärkung – Thermisch günstiges TQFN-32 Gehäuse – 10V-25V Betriebsspannung – Kurzschluss- und Überhitzungsfest 6 Weitere technische Parameter finden sich im Datenblatt . Für dieses Projekt wurden folgende Betriebsparameter festgelegt: – Betriebsspannung von
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PDF
Elektor83.PDF
tcM7224.....39.50 LS86, -,90 1S374. 2,75 4066 -,90 2MHVtA......16.95 s1480........6,-- Flac LSgO . 1,25 1S375. 1,50 4067 8,30 6532Pt4......25,95 s1490........8,40 lmp LS91 . 1,70 1S377. 2,80 4068 -,60 ML 920.......5,-- 16po LS93. 1,20 1S378. 2,10 4069 -,60 ML 926..... .8,45 26po LS95. 1,55 1S379. 2,10
in „Das Ende des Z80“ · Mikrocontroller und Digitale Elektronik ·
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defines.h
0b00110000 /* regulator I multiplier, fractional number (0b10000000=1, 0b01000000=0.5, 0b00100000=0.25 ) */ #define Reg_D_Factor 70 #define MaxAdaptWay 400 /* internal NTC sensor */ #define Internal_NTC_Port PORTF #define Internal_NTC_DDR DDRF #define Internal_NTC_On _BV(3) /* LCD backlight (optional)
in „Entwicklungen und Forschung um den Sparmatic Comet / Zero v2 Heizungsthermostat“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSP308.pdf
on-state resistance RDS(on) - 0.03 0.05 V = 10 V, I = 4.7 GS D 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-22 Preliminary data BSP308 Electrical Characteristics,jat T = 25 °C, unless otherwise
in „Suche Depletion Mode Fet, n-Kanal, low Rds on oder Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APM2601.pdf
Electronics Corp. 1 www.anpec.com.tw Rev. A.1 - Jun., 2003 APM2601 Absolute Maximum Ratings (Cont.) (TA= 25°C unless otherwise noted) Symbol Parameter Rating Unit P Maximum Power Dissipation T =25 ° 1.25 D A W T =100 ° 0.5 A T Maximum Junction Temperature 150 J °C TSTG Storage Temperature Range -55 to 150
in „SMD-Bauteilbestimmung“ · Mikrocontroller und Digitale Elektronik ·
