S ERVICE M ANUAL for 300, 500, and 800 Series This manual contains information that is necessary for Built-in Wall Ovens servicing the following Bosch electric built-in wall ovens: HBL54x0UC, HBL35x0UC, HBL33x0UC
für 145 MHz 2-m-Handfunksprechgerät durch Umbau eines 27-Mhz-Gerätes E. Ritter DJ 4 OG 1971/2 104…111 2-m-Band DK0PX auf dem Kochelsberg, Schwäbische Alb Eberhard Smolka DB 7 UP 1992/3 188…189 GHz-Aktivitäten DL 0 NN
in. W x .61 in. D Light Source Visible Laser Diode 650 nm 11.75 mm H x 21.6 mm W x 15.5 Scan Rate 104 (±) 12 scans/sec (bi-directional mm D ) Weight 0.27 oz./7.5 g Scan Angle 47° ± 3° (typical) / 35° ± 3° (narrow Configuration Uncoded ) 2 Interface DPB and I C control on a 10 pin Scan Patterns Linear
in. W x .61 in. D Light Source Visible Laser Diode 650 nm 11.75 mm H x 21.6 mm W x 15.5 Scan Rate 104 (±) 12 scans/sec (bi-directional mm D ) Weight 0.27 oz./7.5 g Scan Angle 47° ± 3° (typical) / 35° ± 3° (narrow Configuration Uncoded ) 2 Interface DPB and I C control on a 10 pin Scan Patterns Linear
0.5℃ Repeatability : ± ℃ 7.TX 4.NC Range : - 40.0℃ ~ +85℃ 6.1 5.T2 Distance of remote sensor :< 10 m Power Requirements: Supply Voltage: 5V DC Current: Normal mode: 3.8 mA (Average) Sleep mode: 0.3 mA Calibration: 17 mA 1 Version 2.0 KAOT-DAR Environmental Characteristics: Operation Temperature :- 40
0.5℃ Repeatability : ± ℃ 7.TX 4.NC Range : - 40.0℃ ~ +85℃ 6.1 5.T2 Distance of remote sensor :< 10 m Power Requirements: Supply Voltage: 5V DC Current: Normal mode: 3.8 mA (Average) Sleep mode: 0.3 mA Calibration: 17 mA 1 Version 2.0 KAOT-DAR Environmental Characteristics: Operation Temperature :- 40
.include "m32def.inc" ;ein ATMEGA32 steckt im Sockel .def temp1 = r21 ;Register mit dem Daten oder Befehlsbyte .def temp3 = r20 ;Hilfsregister von dem subtrahiert wird .CSEG .org 0 rjmp RESET ;******************
Trig'd A H1 Period 23,66 us Frequency 42,26 kHz Vpp 40,00 mV +PulseWidth 12,65 us -PulseWidth 10,85 us Vrms 11,27 mV H2 ? 104,0 mV 14,15 us 9,250 us 27,96 mV C 50 mV/div AC 200 mV/div 0.28divs 1.92divs S 34779 kHz M 10us/div T 0.0 ns D 5k Trigger Force 4,000 mV
M 85/47,0 k/+ 47,0 k 4005 3950 B57085-M473-+ M 85/100,0 k/+ 100,0 k 4005 3950 B57085-M104-+ +: J for R/R N ± 5 % K for R/R = ± 10 % N M for R/R N ± 20 % 54 Siemens Matsushita Components Temperature Measurement
unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF= 0.1 mA [1] - 90 130 mV IF= 1 mA [1] - 150 190 mV IF= 10 mA [1] - 210 240 mV IF= 100 mA [1] - 280 330 mV IF= 500 mA [1] - 355 390 mV IF= 1000 mA; T amb = 25 °C [1] - 420 500 mV R reverse current V R 10 V [1
unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF= 0.1 mA [1] - 90 130 mV IF= 1 mA [1] - 150 190 mV IF= 10 mA [1] - 210 240 mV IF= 100 mA [1] - 280 330 mV IF= 500 mA [1] - 355 390 mV IF= 1000 mA; T amb = 25 °C [1] - 420 500 mV R reverse current V R 10 V [1
80 100 Id (mA) Id (mA) Figure 24. Gain vs. Id (500 MHz). Figure 25. NF vs. Id (500 MHz). 40 30 3V 3V 5V 5V 35 25 ) m B30 B 20 ( ( I d O 25 P 15 20 10 15 5 0 20 40 60 80 100 0 20 40 60 80 100 Id (mA) Id (mA) Figure
7 IL300 VISHAY Vishay Semiconductors 5 14 IF=10 mA, Mod = ±2.0 mA (peak) B 12 - 0 e RL=1.0 Kˇ p 10 n e p -5 n 8 e i 6 R -10 a d R L10 KΩˇ a 4 l C p -15 2 A 0 -20 0 2 4 6 8 10 104 105 106 Voltage - V F - Frequency - Hz det iil300_12 iil300_15 Figure
7 IL300 VISHAY Vishay Semiconductors 5 14 IF=10 mA, Mod = ±2.0 mA (peak) B 12 - 0 e RL=1.0 Kˇ p 10 n e p -5 n 8 e i 6 R -10 a d R L10 KΩˇ a 4 l C p -15 2 A 0 -20 0 2 4 6 8 10 104 105 106 Voltage - V F - Frequency - Hz det iil300_12 iil300_15 Figure
****************************************** //* A P P L I C A T I O N N O T E F O R T H E A V R F A M I L Y //* //* Number : AVR314 //* File Name : "dtmf.c" //* Title : DTMF Generator //* Date : 00.06.27 //* Version : 1.0 //* Target MCU : Any AVR with SRAM, 8 I/O pins and PWM //* //* DESCRIPTION //*
Figure 2-3. Current Figures for Ceramic Resonator, 1 ms Startup Time Current 1s 1 ms Active Mode 6mA 4μA Power-save Time Total current consumption per second: = (1 sec * 4 μA) + (1 ms * 6 mA) = 4 μAs + 6 μAs = 10 μAs This shows that by reducing the startup time the current consumption is reduced from
GPIO 0 m c n n GPIO 1 o eD r i r i r C t i a r v COM2 l y e D r ) COM4 c l en M D e . O s G C o v . D / m ( COM122 E m COM126 V PP S C C L F M F C C IR V Solomon Systech Jan 2011 P 8/57 Rev 1.5 SSD1351 5 DIE
µs to 1000 µs: 11 A = 10 x 2.5 J The maximum specified energy is defined for a maximum 10 102 103 104 105 shift (ΔV/V) 1 mA ≤ 10 %: tp(µs) Ip= pulse current Maximum energy (10 x 1000 µs): 1 pulse V p corresponding clamping voltage Example: 2381 593 52516 (250 V) KDEPENDSONT2WHENT1IS8 µs TO 10 µs Example
Die Temperature OUT = 1.5A Resistive Load 400 z H390 IL ( 1A/div. Y380 VOUT N AC Coupled V E370 100mV/div. OUT U 10mV/div. E360 R V F 200mV/div. G350 I I 1A/div. C340 I VSW W330 10V/div. S 320-40 -20 0 20 40 60 80 100 120 o DIE TEMPERATURE ( C) Steady State Test Startup through Enable Startup through
1 2 3 VDD3V3 470 VDDLED VDD3V3 470 R23 R20 U4 R22 R21 CD74HC4050M96 D D D L R 0 E E 1 16 T 7 1 3 7 1 0 L 4 L 2 VCC N.C 15 I 4 R - 4 R - X D E X 3 1Y 6Y 14 _ 3 5 A T L L R 4 1A 6A 13 E GPIO2 LED 5 K A 5 2Y N.C/212 M LED6 1 C 2 X USB_TXD 6 2A 5Y 11 T E R E Y 7 3Y 5A 10 L S L 1 USB_RXD 8 3A 4Y 9 GPIO2 2 - GND 4A 7 C 1 F GND GND LED PWR MCU PWR J2 HDR-M-2.54_1x2 TOUCH0 1 TOUCH1 2 VDD3V3 B B R3 R5 R7 R9 R11 12K 12K 12K 12K 12K ESP_EN GPIO0 GPIO18 GPIO19 GPIO36 0 4 0 6 0 8 0 0 02 SW1 4 R SW2 4 R SW3 4 R SW4 4 R SW5 4R K2-1109DP-A4SA K2-1109DP-A4SA K2-
renata batteries
Rechargeable Lithium Coin Cell
ICR1040 B1 33 mAh, 3.7V, 2.0C 10.20 mm x 4.30 mm
ICR1054 P4 46 mAh, 3.85 V, 4.0C 10.20 mm x 5.60 mm
ICR1254 B1 72 mAh, 3.80 V, 2.0C 12.20 mm x 5.60 mm
ICR1042 B4 38 mAh, 3.85 V, 2.0C 10.20 mm x 4.20 mm
ICR1154 B3 70 mAh, 3.82 V, 2.0C 11.20 mm x 5.60 mm
ICR1254 B2 77 mAh, 3.80 V, 2.0C 12.20 mm x 5.60 mm
ICR1054 B1 48 mAh, 3.7V, 2.0C 10.20 mm x 5.60 mm
ICR1154 B4 64 mAh, 3.85 V, 2.0C 11.20 mm x 5.60 mm
ICR1454 B1 104
39.3 0.9 39.3 2.0 34.7 2.6 32.4 Device Operating Voltage 4.8 5.0 5.2 V Device Operating Current 63 77 mA (2) Device Current Variation vs. Temperature 67 µA/°C Device Current Variation vs Voltage 0.0154 mA/mV Thermal Resistance, junction-to-ground lead 102 °C/W (1Measured on Mini-Circuits Characterization
vom O-Ring weisend, montieren. 8-XXX Größen W 1.35 mm W 1.35 mm W 2.18 mm W 2.18 mm W 2.18 mm Parker M Parker M Parker M Parker M Parker M Nr. mm Nr. mm Nr. mm Nr. mm Nr. mm 8-004 2.44 8-030 41.73 8-102 1.96 8-128 38.56 8-154 95.71 8-005 3.23 8-031 44.91 8-103 2.77 8-129 40.16 8-155 102.06 8-006 3.56
Tracker Datei Bearbeiten Video Track Koordinaten Fenster Hilfe Masse A m 1,000 kg Track Kontrolle Neu Masse A Masse A (t, x) x (m) 0,4 0,3 0,2 0,1 0 Masse A (t, y) y (m) 0,2 0,1 0 Masse A (t, y) t (s) 0,02 0,04 0,06 0,08 0,10 0,12 0,14 0,16 t=0,162 s x=0,491 m t=0,162 s y=7,032E-2 m t (s) x (m) y (m) v (m/s) 0,090 -3,953E-3 6,953E-2 5,104 0,095 1,506E-3 0,098 0,100 1,817E-2 0,122 6,531 0,105 6,242E-2 0,213 8,234 0,114 8,613E-2 0,238 7,883 0,119 0,120 0,129 0,288 10,35 0,130 0,138
1 2 3 4 VCCs I0 VCCs L1L U1U1 PIU106VCC ADC6 PIU1019 P PC6 C 6 10mH PIU104VCC ADC7 PIU1022 P PC7 C 7 A I2 OC PIU101AVCC PC0 (ADC0/PCINT8) PI24023 P PC0 C 0 A C4 20 PC1 (ADC1/PCINT9) PI25024 P PC1 C 1 I2 COC GND PIC401 PIC402 PIU102AREF PC2 (ADC2/PCINT10)PIU1026 P PC2
register is read, the P bit A reflects the state of the blink output pin at that time (Table 14). M 0001 RAM01 RAM17 Character Generator Font Mapping The font is a 5 ✕ 7 matrix comprising 104 characters in 0010 RAM02 RAM18 ROM, and 24 user-definable characters. The selection from the total of 128 characters
register is read, the P bit A reflects the state of the blink output pin at that time (Table 14). M 0001 RAM01 RAM17 Character Generator Font Mapping The font is a 5 ✕ 7 matrix comprising 104 characters in 0010 RAM02 RAM18 ROM, and 24 user-definable characters. The selection from the total of 128 characters
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