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PDF
datenblatt_von_FT232BL.pdf
and to Data- Out of the EEPROM via a 2.2K resistor. Also, pull Data-Out of the EEPROM to VCC via a 10K resistor for correct operation. Tri-State during device reset. **Note 1 DS232BL Version 1.8 © Future Technology Devices Intl. Ltd. 2005 Page 8 of 25 FT232BL USB UART ( USB - Serial) I.C. POWER CONTROL
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PDF
A200_FT232BL.pdf
and to Data- Out of the EEPROM via a 2.2K resistor. Also, pull Data-Out of the EEPROM to VCC via a 10K resistor for correct operation. Tri-State during device reset. **Note 1 DS232BL Version 1.8 © Future Technology Devices Intl. Ltd. 2005 Page 8 of 25 FT232BL USB UART ( USB - Serial) I.C. POWER CONTROL
in „Schaltplan für FT 232BL überprüfen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
39662c.pdf
displayed while they are occurring bit 0 Reserved: Write as 0 © 2008 Microchip Technology Inc. Preliminary DS39662C-page 9 ENC28J60 NOTES: DS39662C-page 10 Preliminary © 2008 Microchip Technology Inc. ENC28J60 3.0 MEMORY ORGANIZATION The Ethernet buffer contains transmit and receive memory used by the Ethernet
in „Webserver mit XC167“ · Mikrocontroller und Digitale Elektronik ·
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RequiresAcrobat6.pdf
otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-SourceVoltage Fig. 7 – Gate Charge 0.08 5 V = 10V I = 6A DS ) D V ID= 6A ( e 4 e 0.06 g n l t V s e 3 e u - 0.04 TJ= 125°C o O - - - 2 N t ( G D 0.02 25°C - R S 1 V 0 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 VGS --Gate-to-Source Voltage (V) Qg--Gate Charge
in „Ersatz-MosFet für GF9926“ · Analoge Elektronik und Schaltungstechnik ·
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rt8016_richtek_FT8.pdf
Technology Corporation. All rights reserveis a registered trademark of Richtek Technology Corporation. DS8016-04 February 2012 www.richtek.com 1 RT8016 Typical Application Circuit L 2.2µH V IN 3 VIN 4 VOUT 2.5V to 5.5V LX C IN RT8016 4.7µF 2 6 EN VOUT C OUT 10µF GND 1, 5 Figure 1. FixedVoltage Regulator
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CS8415A_data.pdf
CDIN CS Copyright © Cirrus Logic, Inc. 2005 AUGUST '05 http://www.cirrus.com (All Rights Reserved) DS470F4 CS8415A ORDERING INFORMATION Temp Product Description Package Grade Range Pb-Free Container Order Number Rail CS8415A-CZZ YES Tape and Reel CS8415A-CZZR Commercial -10 to +70°C 28- Rail CS8415A-CZ
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PDF
IRF-610-Datasheet.pdf
Zero Gate Voltage Drain Current DSS DS GS µA V DS = 160 V, VGS = 0 V, TJ= 125 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V ID= 2.0 A b - - 1.5 Ω Forward Transconductance g fs V DS= 50 V, ID= 2.0 Ab 0.8 - - S Dynamic Input
in „Schaltung für logic level to high voltage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PIC16F1503.pdf
Timer2 CWG1 NCO1 Temp. ADC Indicator 10-Bit FVR PWM1 PWM2 PWM3 PWM4 MSSP1 DAC Note 1: See applicable chapters for more information on peripherals. 2: See Table 1-1 for peripherals available on specific devices. DS41607A-page 10 Preliminary
in „Versorgungsspannung vom PIC mit PIC messen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PH2520U.pdf
= 25 °C - 1.65 - Ω (AC) Dynamic characteristics Q total gate charge I = 50 A; V = 10 V; V = 4.5 V; - 78 - nC G(tot) D DS GS QGS gate-source charge Tj= 25 °C; see Figure 11; - 17 - nC see Figure 12 QGD gate-drain charge - 18 - nC VGS(pl) gate-source plateau ID= 50 A; V DS = 10 V; Tj= 25 °C; - 2.2 - V voltage see Figure 11; see Figure 12 Ciss input capacitance V DS = 10 V; VGS = 0 V; f = 1 MHz; - 5850 - pF C output capacitance Tj= 25 °C; see Figure 13 - 1190 - pF oss Crss reverse transfer - 831 - pF capacitance d(on) turn-on delay time V DS = 10 V; RL= 1 Ω; V GS
in „FET Empfehlung“ · Mikrocontroller und Digitale Elektronik ·
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Si9435BDY.PDF
GSS VDS = 0 V,GS = "20 V "100 nA VDS = −30 V, GS= 0 V −1 Zero Gate Voltage Drain Current I mA DSS V DS= −30 V, GS = 0 V,JT = 70_C −5 VDS v −10 V, GS = −10 V −20 On-State Drain Current ID(on) A VDS v −5 V, GS = −4.5 V −5 VGS = −10 VD I = −5.7 A 0.033 0.042 Drain-Source On-State Resistance DS(on) V = −6
in „AVR Ausgang an FET, galvanisch getrennt, so ok?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFHS8342-DataSheet-v01_01-EN.pdf
IRFHS8342PbF HEXFET Power MOSFET V 30 V TOP VIEW DS V GS max ± 20 V D R DS(on) max D 1 6 D D 16.0 mΩ D G (@V GS = 10V) D 2 D 5 D Q g(typical) 4.2 nC D (@V = 4.5V) D S GS G 3 S 4 S S I D 8.5 d A 2mm x 2mm PQFN (@T c(Bottom) 25°C) Applications • Control
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds18s20_.c
[33]; /* maximum number of DS1820/DS18S20 connected to the 1 Wire bus */ #define MAX_DEVICES 8 /* DS1820/DS18S20 devices ROM code storage area */ unsigned char rom_code[MAX_DEVICES][9]; main() { unsigned char i,j,devices; int temp
in „DS18S20+ zeigt nur +85Grad an“ · Mikrocontroller und Digitale Elektronik ·
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DS1337_IIC_Note.pdf
C_write(min); I C_write(hr); I C_write(dy); 2 I C_write(dt); I C_write(mn); I C_write(yr); #if defined DS1307 || defined DS1338 { 2 I C_write(0x10); /* enable sqwe, 1Hz output */ } #elif defined DS1337 || defined DS1339 { 2 I C_start(); I C_write(ADDRTC); /* write slave address + write */ I C_write(0x0e)
in „Problem mit RTC DS1337C“ · Mikrocontroller und Digitale Elektronik ·
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SST89x516.pdf
23 P2.2 (A10) 22 P2.1 (A9) XTAL1 19 VSS 20 21 P2.0 (A8) 1273 40-pdip PI P2.0 Figure 3: Pin Assignments for 40-pin PDIP ©2013 Silicon Storage Technology, Inc. DS25093B 02/13 5 FlashFlex MCU SST89E516RD2 / SST89E516RD
in „Einstieg in 8051 - Atmels AT89S52 oder?“ · Mikrocontroller und Digitale Elektronik ·
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irlz34npbf.pdf
12V 8.0V 8.0V A 6.0V A 6.0V t 4.0V t 4.0V n 100 BOTTOM 2.5VV n 100 BOTTOM 2.5VV r r u u C C c c u 10 u 10 o o - - - - 2.5V i i r r , 1 2.5V , 1 D D I I 20µs PULSE WIDTH 20µs PULSE WIDTH 0.1 TJ= 25°C A 0.1 T J 175°C A 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source
in „MOSFET defekt (evtl. durch Ohmmeter)?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HYG015N10NS1TA_datasheet.pdf
HYG015N10NS1TA N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/380A Tab R DS(O=1.2 mΩ(typ.)@VGS= 10V 100% Avalanche Tested Pin 8 Reliable and Rugged Halogen-Free Devices Available (RoHS
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mcp3424.pdf
command bit 3-2 S1-S0: Sample Rate Selection Bit 00 = 240 SPS (12 bits) (Default) 01 = 60 SPS (14 bits) 10 = 15 SPS (16 bits) 11 = 3.75 SPS (18 bits) bit 1-0 G1-G0: PGA Gain Selection Bits 00 = x1 (Default) 01 = x2 10 = x4 11 = x8 DS22088C-page 18 © 2009 Microchip Technology Inc. MCP3422/3/4 2 If the configuration
in „Sensorplatine MPX4115 DS1621 HIH5030 - Schaltungskontrolle“ · Mikrocontroller und Digitale Elektronik ·
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PH2925U.pdf
7 ; see Figure 6 DSS drain leakage current V DS = 25 V; VGS = 0 V; Tj= 150 °C - - 500 µA V DS = 25 V; VGS = 0 V; Tj= 25 °C - 0.06 1 µA I gate leakage current V = 10 V; V = 0 V; T = 25 °C - 20 100 nA GSS GS DS j V GS = -10 V; VDS = 0 V; j = 25 °C -
in „Mosfet IRFP4568PbF wird extrem heiß - warum?“ · Analoge Elektronik und Schaltungstechnik ·
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STP3NB90FP.pdf
th) Gate Threshold V DS= VGS D = 250 A 3 4 5 V Voltage R DS(on) Static Drain-source On V GS= 10V ID= 1.7 A 4 4.2 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)max 3.5 A V GS= 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max D = 1.7 A 1.6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz VGS = 0 700 pF Coss Output Capacitance 90 pF C Reverse Transfer 7 pF rss Capacitance 2/6 STP3NB90/FP ELECTRICAL
in „unbek. TO220 Bauteil in einem Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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Datei
1-wire-2051.a51
********************************************* Codemem equ 00h ; Bit/Bytebereich DSEG AT 21h COUNT: DS 1 ; Hilfszähler Anzeige LDisc: DS 1 ; Last Discrepancy Rg16: DS 1 ; ASCII Reg 1/10 Rg17: DS 1 ; ASCII Reg 1er Rg18: DS 1 ; ASCII Reg 10er Rg19: DS 1 ; ASCII Reg 100er zahl: DS 3 ; Anzeigenspeicher Ctr
in „DS18B20 über µC (8051) Beispielprogramm“ · Mikrocontroller und Digitale Elektronik ·
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AN1152_Achieving_Higher_ADC_Resolution.pdf
the Nyquist rate, f = 2B, with the help of the high sampling rate capacity of the ADC present in the dsPIC digital signal controller. © 2008 Microchip Technology Inc. DS01152A-page 3 AN1152 EQUATION 8: SNR overall6-bit ADC = SNR overall2-bit ADC with oversampling f 6.02 16 + 1.77 = 6.02 12 + 1.77 +10log
in „Berechnung zur Auflösung ADC - wie richtig?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
OneWire_v04.asm
cbr flags,presence ;flag löschen sbis DS_Pin,DQ ;Warten bis der 18B20 die Datenleitung freigibt rjmp pc-1 ; ret OWReset10: sbr flags,presence ret ;----------------- ; Byte schreiben ;----------------- One_Wire_Write: push index ;Zählregister
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01149c.pdf
time and simplifies the PCB (DS22071) for detailed descriptions. layout. The MCP73837 device that is used in this Common Cathode Diode example has 4.2V battery voltage regulation, 10% pre- conditioning ratio and 7.5% EOC (end of charge
in „Frage zu AN1149 - Load Sharing Microchip“ · Analoge Elektronik und Schaltungstechnik ·
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PIC18F46J11_39932D.pdf
10 µF ±10% 16V -55 to 125ºC Murata GRM31CR61C106KC31L 10 µF ±10% 16V -55 to 85ºC 2011 Microchip Technology Inc. DS39932D-page 33 PIC18F46J11 FAMILY 2.4.1 CONSIDERATIONS FOR CERAMIC FIGURE 2-4: DC BIAS
in „PIC18F46J11 und RTC. Quarz nötig? Anfängerfrage Übersicht verloren ;-(“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mc14553b-d-1192980.pdf
Reference Figure 4) 16 VDD (a) PULSE Q3 20 ns t GENERATOR C C 20 ns 9 1 WL(cl) Q2 L 90% Q1 CL CLOCK 10% 50% LE Q0 CL PLH 1/f O.F. CL tPHL cl DIS DS1 CL BCD OUT 10% 90% 50% PHL t t DS2 TLH THL MR DS3 OVERFLOW 50% 8 VSS TLH 90% VDD CLOCK 50% (b) 10% GENERATOR Q3 su t C rem 1 Q2 CL Q1 CL LATCH 50% GENERATOR
in „MC14553BCP - Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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MPT2P50E.pdf
5.5 6 6.5 7 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics ) ) S M H 10 H 6 ( VGS = 10 V ( TJ= 25⋅C E C 5.75 N 8 TJ=
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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25AA128.pdf
1,1 8 3 SCK Mode 0,0 5 6 SI MSB in LSB in High-Impedance SO FIGURE 1-3: SERIAL OUTPUT TIMING CS 9 10 3 Mode 1,1 SCK Mode 0,0 13 15 14 SO MSB out ISB out Don’t Care SI © 2009 Microchip Technology Inc. DS21831D-page 5 25AA128/25LC128 2.0 FUNCTIONAL DESCRIPTION 2.1 Principles of Operation 2.3 Write Sequence
in „SPI EEPROM -> Kein Page read :- O“ · Mikrocontroller und Digitale Elektronik ·
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MOSFET_TK6A60W_Toshiba_LIN.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS= ±30 V, DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 600 V, GS = 0 V 10 Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR)DSS D GS Gate threshold voltage Vth V DS= 10 V,DI = 0.31 mA 2.7
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_TK6A60W_Toshiba_LIN.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS= ±30 V, DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 600 V, GS = 0 V 10 Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR)DSS D GS Gate threshold voltage Vth V DS= 10 V,DI = 0.31 mA 2.7
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CS5532-34-BS_F3.pdf
A0 and A1, Iout= 1.0 mA VOL - - (VA-) + 0.4 V 0.4 SDO, I out= 5.0 mA Input Leakage Current I - ±1 ±10 µA in SDO Tri-State Leakage Current IOZ - - ±10 µA Digital Output Pin Capacitance Cout - 9 - pF 17. All measurements performed under static conditions. 8 DS755F3 CS5532/34-BS DYNAMIC CHARACTERISTICS
in „CS5534 Referenzspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ds.pdf
Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 20 100 Tj= 25 ℃ 6 V V = 10 V 5.5 V DS 10 V ) T j 25 ℃ A 10 ) 15 8 V n ( r n u e c u i 1 c 10 r i D r ID D 5 V 0.1 ,D I 5 0.01 V GS4.5 V 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 V , Drain-source voltage (V) V , Gate-source voltage
in „Ersatz für MOSFET OSG80R250F gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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BS170_2N7000.pdf
= 60 V, GS = 0 V,JT = 55_C 10 VGS = 10 V, DS = 7.5 V 0.8 On-State Drain Current ID(on) A V GS= 4.5 V,DS = 10 V 0.5 V GS= 10 V,DI = 0.5 A 1.1 2 Drain-Source On-Resistance DS(on) W VGS = 4.5 VD I = 0.2 A 1.6 4 Forward Transconductance gfs VDS = 10 V,DI = 0.5 A 550 mS Diode Forward Voltage VSD S = 0.3 A,GS = 0 V 0.87 1.3 V b Dynamic Total Gate Charge Q g 0.4 0.6 Gate-Source Charge Qgs V DS= 10 V, GS = 4.5 V 0.11 nC ID^ 0.25 A Gate-Drain Charge
in „(Mosfet-) Alternative zu ULN2003“ · Analoge Elektronik und Schaltungstechnik ·
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Manualv11_07.pdf
Befehl: 11 (HEX0x0B) 1. Byte 2. Byte 3. Byte 4. Byte 5. Byte 6. Byte 7. Byte 8. Byte 9. Byte $ DG old DS SA 0x0B DG new 0 0 QS Antwort: keine Beispiel in HEX: 24 00 01 02 0B 01 00 00 1F (Gruppe 0, Gerät 1, ab sofort Gruppe 1, Gerät 1) Neue Geräteadresse setzen Befehl: 10 (HEX0x0A) 1. Byte 2. Byte 3. Byte
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MIC5233-3.3YS-microchip-20221000.pdf
Ground Pin Current vs. Temperature. Output Current. 2018-2022MicrochipTechnologyInc.anditssubsidiaries DS20006033E-page 5 MIC5233 FIGURE 2-7: Ground Pin Current vs. FIGURE 2-10: Ground Pin Current vs. Temperature. Input Voltage. FIGURE 2-11: Ground Pin Current vs. FIGURE 2-8: Ground Pin Current vs. Input
in „STM32F302C8T6 Schaltplanüberprüfung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
spi-L431.h
SPICLK_DIV_64, SPICLK_DIV_128, SPICLK_DIV_256 } spi_prescaler_enum; typedef enum spi_data_size_enum { SPI_DS_4 = 3, SPI_DS_5, SPI_DS_6, SPI_DS_7, SPI_DS_8, SPI_DS_9, SPI_DS_10, SPI_DS_11, SPI_DS_12, SPI_DS_13, SPI_DS_14, SPI_DS_15, SPI_DS_16 } spi_data_size_enum; // Serial Peripheral Interface typedef volatile
in „STM32: SPI - HAL durch eigenen code ersetzen“ · Mikrocontroller und Digitale Elektronik ·
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XC9500XL.pdf
Switch Matrix Function Block I/O Block (54) 18 D/T Q I/O Function Block I/O Block (54) 18 D/T Q I/O DS054_09_042101 Figure 9: FastCONNECT II Switch Matrix 10 www.xilinx.com DS054 (v1.8) August 2, 2004 1-800-255-7778 Preliminary Product Specification R XC9500XL High-Performance CPLD Family Data Sheet I
in „Oszilloskop mit AVR“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_Applikationen.PDF
Message string consisting of ; ‘Parallax’ followed by a linefeed. retw ‘P’,’a’,’r’,’a’,’l’,’l’,’a’,’x’,10 BASIC Program for Receiving Text String via COM1 10 CLS 15 REM Substitute desired baud rate for 19200 in the line below. 20 OPEN “com1:19200,N,8,1,CD0,CS0,DS0,OP0” FOR INPUT AS #1 30 IF NOT EOF(1) THEN
in „MATRIX-Tastatur“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OB2223CPA.pdf
Temperature(℃) i d Temperature(℃ ) f Vth_oc vs Temp n 925 o m 924 C _ 922 t V 921 h 920-40 -10 20ig 50 80 110 140 Temperature(℃ ) B - n O ©On-Bright Electronics Conf- 7 -ial OB_DOC_DS_2223A0 OB2223 High Precision Low Cost MCM Power Switch OPERATION DESCRIPTION optimized for off-line Non-isolated
in „SMD IC "G1768A" Datenblatt gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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Mosfet_Verluste_Kuehlkoerper.pdf
Tabelle1 Mosfet IRF3205PbF R ds on @25°C v gs=10V 8 mOhm Fig 4 Normalized On Resistance vs Temperature 2 @160°C R ds on 0,016 Ohm Uf body diode max 1,3 V PWM freq 16 kHz T rise 200 ns 2E-07 s T fall 300 ns 3E-07 s U 24 V duty cycle
in „H-Brücke Messungen und Meinung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Ds1820_TestProgramm.txt
#asm .equ __w1_port=0x10 // PORTD .equ __w1_bit=6 // PIN PD3 vom PortD #endasm #include <90s8535.h> #include <ds1820.h> #include <delay.h> #include <math.h> #include <stdio.h> #include <lcd.h> char lcd_buffer[33]; /* maximum
in „DS1820 läuft nicht!“ · Mikrocontroller und Digitale Elektronik ·
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MCP79521.pdf
34h 56h 78h 90h Array 00h 07h Address Corresponding EUI-64™ Node Address: 00-04-A3-12-34-56-78-90 DS20002300E-page 46 2012-2023 Microchip Technology Inc.anditssubsidiaries MCP7951X/MCP7952X 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 10-Lead MSOP (3x3 mm) Example 79520I 33613F 10-Lead
in „RTC -> MCP79521“ · Mikrocontroller und Digitale Elektronik ·
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P5504EDG.pdf
250µA V Gate Threshold Voltage V GS(th) VDS = VGS ID= -250µA -1 -1.5 -2.5 Gate-Body Leakage IGSS V DS= 0V, VGS = ±20V ±250 nA V = -32V, V = 0V 1 Zero Gate Voltage Drain Current I DS GS DSS V = -30V, V = 0V, T = 125 °C 10 µA DS GS J 1 On-State Drain Current D(ON) V DS= -5V, VGS = -10V -32 A AUG-19-2004
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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MCP41010.pdf
MCP42XXX version. PDIP/SOIC/TSSOP CS 1 14 VDD SCK 2 M 13 SO P 12 SI 3 4 SHDN VSS 4 X 11 RS PB1 5 X 10 PB0 X PW1 6 9 PW0 PA1 7 8 PA0 2003 Microchip Technology Inc. DS11195C-page 1 MCP41XXX/42XXX 1.0 ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS: 10 kΩ VERSION Electrical Characteristics: Unless otherwise
in „Widerstand regeln“ · Mikrocontroller und Digitale Elektronik ·
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11195c.pdf
MCP42XXX version. PDIP/SOIC/TSSOP CS 1 14 VDD SCK 2 M 13 SO P 12 SI 3 4 SHDN VSS 4 X 11 RS PB1 5 X 10 PB0 X PW1 6 9 PW0 PA1 7 8 PA0 2003 Microchip Technology Inc. DS11195C-page 1 MCP41XXX/42XXX 1.0 ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS: 10 kΩ VERSION Electrical Characteristics: Unless otherwise
in „DC-DC Wandler mit MCP42010“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mcp41xxx.pdf
MCP42XXX version. PDIP/SOIC/TSSOP CS 1 14 VDD SCK 2 M 13 SO P 12 SI 3 4 SHDN VSS 4 X 11 RS PB1 5 X 10 PB0 X PW1 6 9 PW0 PA1 7 8 PA0 2003 Microchip Technology Inc. DS11195C-page 1 MCP41XXX/42XXX 1.0 ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS: 10 kΩ VERSION Electrical Characteristics: Unless otherwise
in „Schaltregler, Feedback und Op Amp“ · Analoge Elektronik und Schaltungstechnik ·
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mtouch_ug.pdf
Average – Gated 16 Set Next Sensor SetNextChannel 25-Button Example SetNextChannel 4-Button Example DS41328B-page 10 © 2008 Microchip Technology Inc. FIGURE 3-1: SOFTWARE FLOWCHART Capacitive Initializations Enable Interrupts GIE = 1 Main Loop Main Loop Code Discard Reading, Restart Timers Interrupt No
in „Näherungsschalter durch 1mm Aluminium“ · Analoge Elektronik und Schaltungstechnik ·
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CS6422_F1.pdf
tsDATA thDATA tHLSTROBE DATA Bit15 Bit14 Bit0 Bit15 Bit14 Figure 3. Microcontroller Interface Timing 8 DS295F1 CS6422 ferrite bead +5V Analog 0.1µF 16 1 0.1µF + DVDD AVDD + 10 F 10 F 15 DGND AGND 2 CS6422 MB 19 0.1µF +10 µF 12.1 k Network 4 NO Mic Bias Line Out 18 3300 pF APO 0.022 F 0.47 µF 6.04 k Network
in „Schaltung um Echo rauszufiltern“ · Mikrocontroller und Digitale Elektronik ·
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GA4A4P.pdf
3.0 V GA4F3P 0.5 2.0 V GA4F3R 0.5 2.0 V GA4A4L 0.9 6.0 V GA4L4K 2.0 8.0 V 2 Data Sheet D16494EJ2V0DS GA4xxx Note 3 PART NUMBER R 1 R2 UNIT MIN. TYP. MAX. MIN. TYP. MAX. GA4A4M 7.00 10.00 13.00 7.00 10.00 13.00 kΩ GA4F4M 15.40 22.00 28.60 15.40 22.00 28.60 kΩ GA4L4M 32.90 47.00 61.10 32.90 47.00 61.10
in „Was für ein Bauteil?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FDN335N.pdf
0.120 V GS= 2.5 V, D = 1.5 A 0.078 0.100 I On-State Drain Current V = 4.5 V, V = 5 V 8 A D(on) GS DS gFS Forward Transconductance V DS= 5 V, D = 1.5 A 7 S Dynamic Characteristics Ciss Input Capacitance V DS= 10 V, VGS = 0 V, 310 pF f = 1.0 MHz Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 40 pF Switching Characteristics (Note 2) d(on) Turn-On Delay Time V DD= 10 V, ID= 1 A, 5 15 ns t Turn-On Rise Time V GS= 4.5 V, RGEN = 6 8.5 17 ns r d(off) Turn-Off Delay Time 11 20 ns f Turn-Off Fall Time 3 10 ns Q g Total Gate Charge V DS= 10 V, ID= 1.7 A, 3.5 5 nC Q gs Gate-Source
in „FDN335N Hilfe mit dem Datenblatt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FDN335N.pdf
0.120 V GS= 2.5 V, D = 1.5 A 0.078 0.100 I On-State Drain Current V = 4.5 V, V = 5 V 8 A D(on) GS DS gFS Forward Transconductance V DS= 5 V, D = 1.5 A 7 S Dynamic Characteristics Ciss Input Capacitance V DS= 10 V, VGS = 0 V, 310 pF f = 1.0 MHz Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 40 pF Switching Characteristics (Note 2) d(on) Turn-On Delay Time V DD= 10 V, ID= 1 A, 5 15 ns t Turn-On Rise Time V GS= 4.5 V, RGEN = 6 8.5 17 ns r d(off) Turn-Off Delay Time 11 20 ns f Turn-Off Fall Time 3 10 ns Q g Total Gate Charge V DS= 10 V, ID= 1.7 A, 3.5 5 nC Q gs Gate-Source
in „Batt. Ladung per MOSFET Ein/Aus schalten“ · Mikrocontroller und Digitale Elektronik ·