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Datei
hardware_t.cpp
[0][3] + 100) / 100); ZeroScaleFactor[0][4] = (float) ((Voltage_Correction[0][4] + 100) / 100); ZeroScaleFactor[0][5] = (float) ((Voltage_Correction[0][5] + 100) / 100); ZeroScaleFactor[0][6] = (float) ((Voltage_Correction
in „Wittig(welec) DSO W20xxA Open Source Firmware“ · Mikrocontroller und Digitale Elektronik ·
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ZXM61N02F.pdf
graph. ISSUE 1 - JUNE 2004 mm 2 n o Refer Note (b) e 1 t Refer Note (a) r p 0.6 C i n i a 1s D 0.4 D 100m 100ms e - 10ms w I 1ms P 0.2 100us x a 10m 0.1 1 10 100 M 0 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve 180 240 ) Refer Note
in „74LS109 Toggelt nicht“ · Mikrocontroller und Digitale Elektronik ·
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nFET_ZXM61N02FTA.pdf
graph. ISSUE 1 - JUNE 2004 mm 2 n o Refer Note (b) e 1 t Refer Note (a) r p 0.6 C i n i a 1s D 0.4 D 100m 100ms e - 10ms w I 1ms P 0.2 100us x a 10m 0.1 1 10 100 M 0 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve 180 240 ) Refer Note
in „ESP8266 Module mit Batterie betreiben - Strom sparen“ · Mikrocontroller und Digitale Elektronik ·
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nFET_ZXM61N02FTA.pdf
graph. ISSUE 1 - JUNE 2004 mm 2 n o Refer Note (b) e 1 t Refer Note (a) r p 0.6 C i n i a 1s D 0.4 D 100m 100ms e - 10ms w I 1ms P 0.2 100us x a 10m 0.1 1 10 100 M 0 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve 180 240 ) Refer Note
in „Wellenlänge Infrarot Leuchtdiode?“ · Analoge Elektronik und Schaltungstechnik ·
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nFET_ZXM61N02FTA.pdf
graph. ISSUE 1 - JUNE 2004 mm 2 n o Refer Note (b) e 1 t Refer Note (a) r p 0.6 C i n i a 1s D 0.4 D 100m 100ms e - 10ms w I 1ms P 0.2 100us x a 10m 0.1 1 10 100 M 0 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve 180 240 ) Refer Note
in „3.3V MOSFET ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA-1.pdf
graph. ISSUE 1 - JUNE 2004 mm 2 n o Refer Note (b) e 1 t Refer Note (a) r p 0.6 C i n i a 1s D 0.4 D 100m 100ms e - 10ms w I 1ms P 0.2 100us x a 10m 0.1 1 10 100 M 0 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve 180 240 ) Refer Note
in „ATtiny13A: ESP8266 ein- und ausschalten“ · Mikrocontroller und Digitale Elektronik ·
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nFET_ZXM61N02FTA.pdf
graph. ISSUE 1 - JUNE 2004 mm 2 n o Refer Note (b) e 1 t Refer Note (a) r p 0.6 C i n i a 1s D 0.4 D 100m 100ms e - 10ms w I 1ms P 0.2 100us x a 10m 0.1 1 10 100 M 0 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve 180 240 ) Refer Note
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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nFET_ZXM61N02FTA.pdf
graph. ISSUE 1 - JUNE 2004 mm 2 n o Refer Note (b) e 1 t Refer Note (a) r p 0.6 C i n i a 1s D 0.4 D 100m 100ms e - 10ms w I 1ms P 0.2 100us x a 10m 0.1 1 10 100 M 0 0 20 40 60 80 100 120 140 160 V DS - Drain-Source Voltage (V) T - Temperature (°C) Safe Operating Area Derating Curve 180 240 ) Refer Note
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Spice_Models.pdf
272.204 TF=12.13E-12 + VTF=10 ITF=0.147 TR=3E-09 XTB=1 XTI=5 KF=7.5E-14 .MODEL NPN NPN + IS=170E-18 BF=100 NF=1 VAF=100 IKF=0.0389 ISE=7.6E-18 + NE=1.13489 BR=1.11868 NR=1 VAR=4.46837 IKR=8 ISC=8E-15 + NC=1.8 RB=250 RE=0.1220 RC=200 CJE=120.2E-15 VJE=1.0888 MJE=0.381406 + VJC=0.589703 MJC=0.265838 FC=0.1
in „PSpice .cir-file einbinden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2sk3142.pdf
1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 VGS = 10 V Pulse Test V DS = 10 V 5 V ) 80 ) 80 Pulse Test ( 4 V ( D
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
625945.pdf
±25 V, V = 0 V ⎯ ⎯ ±10 μA GSS GS DS Gate-source breakdown voltage V I = ±10 μA, V = 0 V ±30 ⎯ ⎯ V (BR) GSS G DS Drain cut-off current I V = 600 V, V = 0 V ⎯ ⎯ 100 μA DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 ⎯ ⎯ V (BR) DSS D GS Gate threshold voltage Vth VDS = 10 V,DI = 1 mA 2.0
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TAS5611.pdf
OUTPUT POWER SYSTEM EFFICIENCY vs vs SUPPLY VOLTAGE OUTPUT POWER 150 T = 75°C 100 C 90 3 W 80 8 W 6 W 4 W 4 W W100 6 W 70 r e - 60 o 8 W y P n 50 u i t i u E 40 - 50 O 30 P 20 T = 25°C 10 C THD+N = 10% 0 0 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 0 50 100 150 200 250 300 PV
in „TAS5611 Layout erfahrung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
NEW_MAP.txt
exitPowerSave(){ INTCON.RBIE = 0; // disables PORTB on-change interrupt } void setupUsart(unsigned char br){ switch(br){ // done so, because you can't call USART_Init(variable); but only USART_Init(literal); case BAUDRATE_300: USART_Init(300); break; case BAUDRATE_1200: USART_Init(1200); break; case BAUDRATE
in „Chatpad PIC16F883“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SPP80N06S2L-07.pdf
-07 240 90 W A 200 70 180 t 160 60 t D P 140 I 50 120 40 100 80 30 60 20 40 10 20 00 20 40 60 80 100 120 140 160 °C 190 00 20 40 60 80 100 120 140 160 190 °C TC T C Safe operating area 4 Transient thermal impedance I = f ( V ) Z = f (t ) D DS thJC p parameter
in „Transistor (Mosfet) Temperatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
bas33-bas34-vishay.pdf
V(BR) 40 V Breakdown voltage t = 0.3 ms p BAS34 V(BR) 70 V Diode capacitance VR= 0 V, f = 1 MHz, C D 3 pF TYPICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified) 10 000 1000 V = V ) R RRM ) Tj= 25 °C n 1000 m 100 t t e e r Scattering Limit r Scattering Limit C 100 C 10 e r e a e o R 10 F 1 - - I I 1 0.1 0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 2.0 94 9079 T j Junction Temperature (°C) 94 9078 V F Forward Voltage
in „Diode BAS33 (I_R typ. 0,5nA) nur noch kurze Zeit erhältlich“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STD5NM50.pdf
Operating Junction Temperature (•)Pulse width limited by safe operating area (1)SD ≤ 5A, di/dt ≤ 400DD≤ V(BR)DSSj ≤JMAX. September 2002 1/10 STD5NM50/STD5NM50-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W T l Maximum Lead Temperature
in „Dynamischer Wärmewiderstand => Cth Rth“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BCR191-INF.pdf
Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 - - V I = 100 µA, I = 0 C B Collector-base breakdown voltage V(BR)CBO 50 - - IC= 10 µA, IE= 0 Collector-base cutoff current ICBO - - 100 nA VCB = 40 V, E = 0 Emitter-base cutoff current IEBO -
in „Comparator LM393 to uC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
UCC28880.pdf
1N4937 + D1 RFB1 600 V 590 k: CL VOUT C2 9## ^75 ns +/- 1% 4.7 2F RL 12 V 4.7 2F L1 Q1 16 V 402 k: 100 mA 400 V 330 mA 500 V C1 HVIN - 4.7 2F VDD DRAIN 400 V UCC28880 AC (115 V/230 V) CVDD 100 nF FB 10 V GND R 51 k: +/- 1% D3 1N4007 Figure 14. Universal Input, 12-V, 100-mA Output Low-Side Buck 8.2.1.1
in „230V AC -> 3V3 DC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm3915.pdf
LED #10. V LEDis sensed via the 20k resistor connected to pin 11. The very small current (less than 100 μA) that is diverted from LED #9 does not noticeably affect its intensity. An auxiliary current source at pin 1 keeps at least 100 μA flowing through LED #11 even if the input voltage rises high enough
in „24 V Wechselstrom messen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HX8238A.pdf
S97 6912 370 18x100 574 S147 6012 370 18x100 525 S98 6894 240 18x100 575 S148 5994 240 18x100 526 S99 6876 370 18x100 576 S149 5976 370 18x100 527 S100 6858 240 18x100 577 S150 5958 240 18x100 528 S101 6840 370 18x100
in „TFT- Ansteuerung ET0350G0DH6 (Glyn) mit HX8238 LCD Driver und Microchip Graphic Lib“ · Mikrocontroller und Digitale Elektronik ·
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PDF
C17410452.pdf
www.sanken-ele.co.jp/en/ © SANKEN ELECTRIC CO., LTD. 2014 STR3A400 Series 4. Performance Curves 4.1 Derating Curves 100 100 ) ( ) n ( 80 i 80 n f c e r f 60 C 60 A o g i g t r t e p ar 40 D 40 O D r a er a S a e 20 e 20 p m e T S 0 E 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Junction Temperature, T (°C) Junction
in „Test in der Schaltung STR3A400“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
e3d_ic.inc
i=0; #while(i<pin_o) object{MLF_PIN(pin_h,pin_br,pin_t) translate<-(div(pin_o,2)-i)*pitch,0,-LK/2-0.01> rotate<0,180,0> } object{MLF_PIN(pin_h,pin_br,pin_t) translate<+(div(pin_o,2)-i)*pitch,0,-LK/2-0.01> rotate<0,180,0> } #local i=i+1; #end rotate
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Datei
Safari_HTTP.txt
option> <option value="0080">80 %</option> <option value="0090">90 %</option> <option value="0100">100 %</option> </select> </p><br><input name="SUB" value="Senden" type="submit"></form><input name="INVA14" type="text" size="4" maxlength="4" value="0040"><br></body></html>
in „AVR Net IO Dropdown Liste“ · Mikrocontroller und Digitale Elektronik ·
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Datei
FireFox_HTTP.txt
option> <option value="0080">80 %</option> <option value="0090">90 %</option> <option value="0100">100 %</option> </select> </p><br><input name="SUB" value="Senden" type="submit"></form><input name="INVA14" type="text" size="4" maxlength="4" value="0030"><br></body></html>
in „AVR Net IO Dropdown Liste“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml2502.pdf
Range -55 to + 150 °C Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/30/03 IRLML2502 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– –
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STP3NB90FP.pdf
30 V o ID Drain Current (continuous) at Tc= 25 C 3.5 3.5(**) A I Drain Current (continuous) at T = 100 Co 2.2 1.26(*) A D c DM Drain Current (pulsed) 14 14 A o Ptot Total Dissipation at c = 25 C 100 35 W Derating Factor 0.8 0.28 W/ C dv/dt1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns V ISO Insulation
in „unbek. TO220 Bauteil in einem Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bfr183.pdf
Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 12 - - V I = 1 mA, I = 0 C B Collector-emitter cutoff current CES - - 100 µA VCE = 20 V, BE = 0 - - 100 nA Collector-base cutoff current CBO VCB = 10 V,EI = 0 Emitter-base cutoff current EBO - -
in „Induktivität SOT23“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BFR93A_a.PDF
Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V (BR)CEO IC= 1 mA, B = 0 12 - - Collector-emitter cutoff current ICES µA V CE= 20 V, BE = 0 - - 100 Collector-base cutoff current I nA CBO V CB= 10 V, E = 0 - - 100 Emitter-base cutoff current IEBO µA V EB
in „KiCAD: SOT323 aus libcms scheint defekt zu sein“ · Platinen ·
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PDF
DALIHardware.pdf
, R1 3, R14, R21, Resistor, 22 Oh m , SM T 1Panasonic ERJ-8GEY22V R24 41 3 R9, R16, R30 Resistor, 100KOh m , SM T Panasonic ERJ-8GEY100KV Resistor, 820KOh m , SM T 1206 ERJ-8GEY820KV 42 2 R10, R11 Panasonic 12 www.irf.com IRPLDIM2 Resistor, 1M Ohm, SM T1 20 6 ERJ-8GEY1M V 43 1 R1 7 Panasonic 44 1 R8
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PDF
lmc7660.pdf
otherwise specified. Test circuit is shown in Figure 1 . (2) Limits at room temperature are specified and 100% production tested. Limits in boldface are specified over the operating temperature range (but not 100% tested), and are not used to calculate outgoing quality levels. (3) The LMC7660 can operate without
in „LM7660 mit 4,7µF statt 10µF geht das auch?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1-SPD30N06S2L-13_1-1.pdf
. Static Characteristics Drain-source breakdown voltage V(BR)DSS 55 - - V VGS =0V,DI =1mA 1.2 1.6 2 Gate threshold voltage, GS = VDS VGS(th) ID=80µA Zero gate voltage drain current DSS µA VDS =55V, GS=0V, Tj=25°C - 0.01 1 V =55V, V =0V, T =125°C - 1 100 DS GS
in „Kuehlkoerper“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1-SPP30N03L.pdf
SPP30N03L 101 SPP30N03L K/W A 0 10 t = 26.0µs p 10 2 J D /D t 10 -1 I S Z VD 100 µs )= Sn D = 0.50 RD 10 -2 0.20 10 1 1 ms 0.10 0.05 10 ms -3 0.02 10 0.01 DC single pulse 10 0 10 -4 10 -1 100 10 1 V 102 10-7 10-6 10 -5 10 -4 10 -3 10 -2 s 100 VDS tp 5 Semiconductor Group SPP30N03L
in „logic level MOSFET - falsche Gate threshold voltage?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HY1403-HOOYI.pdf
( n r r e 40 u o C 40 P i o 30 r P D 30 D 20 I 20 10 o o 0 TC=25 C 10 TC=25 C,V G10V 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Tc- Case Temperature (°C) T c-Case Temperature (°C) Safe Operation Area 400 ) A t100 i e )Lm r s(n 100μs u R C i 10 1ms r D 10ms D I DC 1 O
in „Alternative zu beschädigtem MOSFET?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
D130858D.PDF
Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter V (BR)CEO 700 — — V C = 10mA, R BE∞ breakdown voltage Emitter to base V 6 — — V I = 10mA, I = 0 (BR)EBO E C breakdownvoltage Collector cutoff current ICES — — 500 A VCE 1500V, R =BE DC current transfer ratio
in „Transistor am Arduino“ · Mikrocontroller und Digitale Elektronik ·
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PDF
msp430fr2532.pdf
External: UCLK 16 MHz eUSCI Duty cycle = 50% ±10% f SCL clock frequency 2 V, 3 V 0 400 kHz SCL fSCL = 100 kHz 4.0 HD,STA Hold time (repeated) START 2 V, 3 V µs fSCL > 100 kHz 0.6 fSCL = 100 kHz 4.7 SU,STA Setup time for a repeated START f > 100 kHz 2 V, 3 V 0.6 µs SCL HD,DAT Data hold time 2 V, 3 V 0 ns
in „MSP430 Output nur auf zwei von vier Pinnen möglich?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSP149_Rev1.1.pdf
I D 8 0 -0.5 6 -1 98 % ] [ V ) ) ( 4 98 % ( -1.5 typ D G R V -2 2 % 2 typ -2.5 0 -3 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj[°C] Tj[°C] 11 Threshold voltage bands 12 Typ. capacitances ID=f(V GS); VDS=3 V; T j25 °C C=f(V DS); VGS=-3 V; f=1 MHz 10 1000 Ciss 1 N M L K J ] A 400 µA F [ [ 100
in „BF246B probleme“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2233_1_.pdf
V — — 10 µA L R R Capacitance C V = 0, f = 1 MHz — 30 — pF T Collector emitter breakdown voltage V(BR) CEO C = 0.5 mA 55 — — V Emitter collector t V(BR) ECO E = 0.1 mA 7 — — V c breakdown voltage e V = 24 V — 10 100 nA D Collector dark current I CE CEO V = 24 V, Ta = 85°C — 2 50 µA CE Capacitance (collector
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PDF
AS-MLV-P2_Datasheet_EN_v2.pdf
of R Swith 1% Resolution (V S5V) R [Ohm] R [Ohm] V [V] A/D Voltage Step for 1% Resolution S L out 100 10k 4.95 0.5mV 1k 10k 4.5454 4.1mV 10k 10k 2.5 12.4mV 100k 10k 0.4545 4.1mV 1M 10k 0.0495 0.5mV 1k 100k 4.95 0.5mV 10k 100k 4.5454 4.1mV 100k 100k 2.5 12.4mV 1M 100k 0.4545 4.1mV Examples for Readout
in „Voltcraft CO-20 USB-Luftqualitätsfühler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
pcm2912a.pdf
no need for a special heat sink PCB design. 12.2 Layout Example 820 1uF 820 16 0.022uF3.3K 3.3K 1uF 100uF V OUTR D 33 V OUTL D+ VBUS 0.022uF 100uF GND 33 PCM2912A 1uF 3.3K 3.3K 1uF 1.5K 1uF 16 USB port 10uF 1K 3.3uF 100pF 10uF Analog Input 1uF 1M Clock hardware for Decoupling capacitors as built in resonator
in „Impedanzanpassung MAX9814 <-> PCM2912A“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
_ung_1.htm
Kontakt herstellt, sondern mehrfach ein- und ausschaltet bis zum endgültigen Herstellen des Kontaktes.<br> Soll nun mit einem schnellen Microcontroller gezählt werden, wie oft ein solcher Kontakt geschaltet wird, dann haben wir ein Problem, weil das Prellen als mehrfache Impulse gezählt wird.</p> <p>Diese
in „C Anfänger Tutorial AVR“ · Mikrocontroller und Digitale Elektronik ·
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Datei
temp_out.js
tooltip: { formatter: function() { var point=this.points[0]; return'<b>'+ point.series.name +'</b><br />'+ Highcharts.dateFormat('%a. %e. %b. %Y %H:30', this.x)+ '<br /><b>'+ Highcharts.numberFormat(point.y, 1)+' °C</b>'; }, shared: true, }, legend: { layout: 'vertical', align: 'right', verticalAlign: 'top', x: -10, y: 100, borderWidth: 0 }, series: [{ name: 'Außen', data: temperature, color: '#0292C0', }], }); }); });
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Bild
Datenblatt-Tabelle der elektrischen Parameter eines IRF3708 MOSFETs
Rectifier Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient 0.028 V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance 8
in „ESP32 mit 3,3V PWM einen 3,7V Motor betreiben“ · Analoge Elektronik und Schaltungstechnik · · Screenshots
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PDF
MCAC75N06YBTP-datasheet-3.pdf
Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250µA Drain-Source Breakdown Voltage (BR)DSS GS D 60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source
in „Suche Ersatz für obsoleten MOSFET MCAC75N06YB-TP (oder Bezugsquelle)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tips_microDCDCconverter.pdf
(PKG:SOT-25)⇒61.3°C (@Ta=23.4°C) 0 0.1 1 10 100 XCL202(PKG:CL-2025)⇒36.3°C (@Ta=23.4°C) Output Current OUT[mA] Fig. 4: Power Conversion Efficiency, XC6221A182MR-G vs. XCL202B181BR-G Fig. 5: Heat Characteristics, XC6221A182MR-G vs. XCL202B181BR-G
in „1.5A regulator Built-in Step-Down micro DC/DC Converters“ · Mikrocontroller und Digitale Elektronik ·
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Datei
mmc_stm32f1.c
/*------------------------------------------------------------------------*/ /* STM32F100: MMCv3/SDv1/SDv2 (SPI mode) control module */ /*------------------------------------------------------------------------*/ /* / Copyright (C) 2014, ChaN, all right reserved. / / * This software is a
in „STM32Fxxx: Frage zur Initialisierung mit der StdPeriphLib“ · Mikrocontroller und Digitale Elektronik ·
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Datei
mmc_stm32f1.c
/*------------------------------------------------------------------------*/ /* STM32F100: MMCv3/SDv1/SDv2 (SPI mode) control module */ /*------------------------------------------------------------------------*/ /* / Copyright (C) 2014, ChaN, all right reserved. / / * This software is a
in „STM32F103: Problem mit ChanFat und SD karte“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2N5088-89.pdf
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (C = 1.0 mAdc,BI = 0) 2N5088 30 − 2N5089 25 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (I = 100 mAdc, I = 0) 2N5088 35 − C E 2N5089 30 − Collector Cutoff Current CBO nAdc (VCB = 20 Vdc,EI
in „rauscharmer NPN min 200v gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
jpgraph.php
root", "xxxx") // Anmelden bei der Datenbank or die("Keine Verbindung möglich: " . mysql_error() . "<br>"); mysql_select_db("avrio") or die("Auswahl der Datenbank fehlgeschlagen<br>"); $now = time(); $Nunc = date('Y-m-d',$now); // SQL Abfrage $query = "SELECT UNIX_TIMESTAMP(dattim),Innen,Aussen FROM avrdat
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PDF
2sk1402.pdf
) Item Symbol Min Typ Max Unit Test conditions Drain to source K1402 V 600 — — V I = 10 mA, V = 0 (BR)DSS D GS breakdown voltage K1402A 650 — — Gate to source breakdown V ±30 — — V I = ±100 µA, V = 0 (BR)GSS G DS voltage Gate to source leak current IGSS — — ±10 µA V GS= ±25 V, V DS= 0 Zero gate voltage
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
EL817.pdf
PHOTOCOUPLER EL817 Series Schematic Features: • Compliance Halogens Free (Only copper leadframe) (Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm) Pin Configuration • Current transfer ratio 1. Anode (CTR: 50~600% at I F= 5mA, V CE = 5V) 2. Cathode • High isolation voltage between input 3. Emitter and output
in „230V erkennen - Modul?“ · Analoge Elektronik und Schaltungstechnik ·
