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PDF
SY8105ADC.pdf
Applications Note:AN_SY8105 High Efficiency, 500kHz, 5A, 18V Input Synchronous Step Down Regulator General Description Features The SY8105 is a high efficiency 500 kHz synchronous • low R DS(ON) for internal switches (top/bottom): step-down DC-DC converter capable of delivering 5.0A 40mΩ/26mΩ current. The SY8105 operates over a wide input voltage • 4.5-18V input voltage range range from 4.5V to 18V and integrates main • 5.0A output current capability switch and synchronous switch with very low R • 500 kHz switching frequency to minimize the conduction
in „Fragen Stromversorgung / Schaltplan“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Capacitive_Touch_Sensor_Design_Guide_AN2934.pdf
from nearby ground-referenced circuit components. © 2020 Microchip Technology Inc. Application Note DS00002934B-page 18 AN2934 Self-Capacitance Sensors Table 1-9. Sensor to Shield Separation for Two-Level Shield Type Min. Typical Max. Sensor – Shield Separation 1 mm 2 mm 3 mm (S) If the shield electrode
in „Wie realisiert man Sensortasten?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pcm1796.pdf
16-/24-bit I S format Sampling rate selection for de-emphasis De-emphasis disabled Register 18 DMF[1:0] yes yes (1) Disabled,44.1 kHz, 48 kHz, 32 kHz De-emphasis control De-emphasis disabled Register 18 DME yes Disabled, enabled Soft mute control Mute disabled Register 18 MUTE yes Soft mute disabled
in „Audio Signal verdoppeln“ · Analoge Elektronik und Schaltungstechnik ·
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Bild
Software-Interface zur Temperaturanzeige und Korrektur
WordClock Temperature Name Value RTC temperature 32°C DS18xx 267.5°C Temp correction RTC (units of 0.5°C) 0 Save Temp correction DS18xx (units of 0.5°C) 0 Save Display temperature
in „WordClock mit WS2812“ · Projekte & Code · · Screenshots
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PDF
ZXM61N02F.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „74LS109 Toggelt nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STW12NK90Z.pdf
breakdown voltage VDS = max rating I Zero gate voltage V = max rating, 1 µA DSS drain currentGSV= 0) DS 50 µA TC = 125°C Gate-body leakage GSS current (V = 0) VGS = ± 20V ±10 µA DS V Gate threshold voltage V = V , I = 100µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on RDS(on) VGS = 10V,DI = 5.5A
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „ESP8266 Module mit Batterie betreiben - Strom sparen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „Wellenlänge Infrarot Leuchtdiode?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „3.3V MOSFET ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA-1.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „ATtiny13A: ESP8266 ein- und ausschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1307.pdf
32.768kHz Crystal Connection V - +3V Battery Input BAT GND - Ground ORDERING INFORMATION SDA - Serial Data DS1307 8-Pin DIP (300-mil) SCL - Serial Clock DS1307Z 8-Pin SOIC (150-mil) SQW/OUT - Square Wave/Output Driver DS1307N 8-Pin DIP (Industrial) DS1307ZN 8-Pin SOIC (Industrial) DESCRIPTION The DS1307 Serial
in „Real-Time Clock (ds1307)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
gbdso_uk.pdf
100n 1% IC3a 6 C18 A5 11 1 3 0V 7 R13 1% A6 A5 1% IC3b 4k7 100n 12 A6 5 1% 2 32 A7 13 A7 C16 A8 14 R11 R10 VPP A8 C1 M k IC3 = MC33182D 220p A0 11 A0 A9 15 A9 1 4 5VA A1 10 A1 A10 16 A10 18p 9 A2 A11 17 D0 13 D0 A2 A11 D1 14 A3 8 A3 A12 18 A12 P2 R15 C20 D1 IC7 A4 7 A4 A13 19 A13 k D2 15 D2 6 A5 A14 20 100k 1 100n L3 5V C D3 18 D3 A5 A14 2V5 CW 2V5 R17 D4 19 EPROM A6 5 A6 A15 21 A15 100µH D4 4 A7 D0 22 100k D5 20 D5 A7 29 A8 D1 23 D0 2
in „Bameboy-LCD mit avr“ · Mikrocontroller und Digitale Elektronik ·
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PDF
gbdso_uk.pdf
100n 1% IC3a 6 C18 A5 11 1 3 0V 7 R13 1% A6 A5 1% IC3b 4k7 100n 12 A6 5 1% 2 32 A7 13 A7 C16 A8 14 R11 R10 VPP A8 C1 M k IC3 = MC33182D 220p A0 11 A0 A9 15 A9 1 4 5VA A1 10 A1 A10 16 A10 18p 9 A2 A11 17 D0 13 D0 A2 A11 D1 14 A3 8 A3 A12 18 A12 P2 R15 C20 D1 IC7 A4 7 A4 A13 19 A13 k D2 15 D2 6 A5 A14 20 100k 1 100n L3 5V C D3 18 D3 A5 A14 2V5 CW 2V5 R17 D4 19 EPROM A6 5 A6 A15 21 A15 100µH D4 4 A7 D0 22 100k D5 20 D5 A7 29 A8 D1 23 D0 2
in „Alternative zu teurem Oszilloskop“ · Analoge Elektronik und Schaltungstechnik ·
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Bild
Software-Screenshots von Temperaturverläufen
Real-Time Temperature - 5B00000201EEA828 DS18B20 Info Temperature 44,938 °C Units Fahrenheit Celsius Resolution ... Graph Done polling. Real-Time Temperature - 700000022179S228 DS18B20 Info Temperature 57,562 °C Units Fahrenheit Celsius Resolution
in „Yamaha RX-V1600 Receiver/Amp schaltet nicht ein“ · Analoge Elektronik und Schaltungstechnik · · Screenshots
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PDF
FCPF11N60B.pdf
J ficient D -- 0.6 -- V/°C F 1 BV Drain-Source Avalanche Breakdown V = 0 V, I = 11 A -- 700 -- V 1 DS Voltage GS D N I V = 600 V, V = 0 V 6 DSS Zero Gate Voltage Drain Current DS GS -- -- 1 µA 0 V DS = 480 V, C = 125°C -- -- 10 µA GSSF Gate-Body Leakage Current, Forward V GS = 30 V, DS = 0 V -- -- 100 nA I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA GSSR GS DS On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, D = 250 µA 3.0 -- 5.0 V R Static Drain-Source DS(on) V GS = 10 V,DI = 5.5 A -- 0.32 0.38 Ω On-Resistance gFS Forward Transconductance V DS
in „Kühlkörper Dimensionieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TMC4671-LA_datasheet.pdf
1: ext. MCLK input 2: ext. MCLK output 3: ext. CMP mclk_polarity_b bit(18) 0: off 1: on mdat_polarity_b bit(19) 0: off 1: on sel_nclk_mclk_i_b bit(20) 0: off 1: on 0x05 h dsADC_MCLK_A This register is used to modify Delta Sigma modulator clock. Do not modify if you use internal
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PDF
DS3930.pdf
Replacement for Mechanical DS3930E 20 TSSOP Potentiometers Pin Configuration Typical Operating Circuit TOP VIEW VCC VCC A0 1 20 H0-2 A0 H0-2 A1 2 19 W 0 A1 W0 A2 3 18 W 1 4.7kΩ 4.7kΩ W WIPER SDA 4 17 W2 A2 1 TERMINALS SDA W2 SCL 5 DS3930 16 LO 0-5 2-WIRE INTERFACE SCL LO0-5 I/O0 6 15 HI3-5 DS3930 I/O 7 14 I/0 H3-5 1 W3 I/O2 8 13 W4 NONVOLATILE I/O I/1 W3 V CC 9 12 W 5 VCC I/2 W4 TERMINALS W GND 10 11 I/3 VCC 5 DECOUPLI0.1µFP DIGITAL
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PDF
ug1091-carrier-card-design.pdf
/IO peripherals on the carrier card A21 GND Ground, connect to carrier card ground plane A22 PU18_4p7 JTAG_TMS_C2M JTAG mode select A23 PU18_4p7 JTAG_TDO_M2C JTAG data out A24 PU18_4p7 JTAG_TDI_C2M JTAG data in A25 PU18_4p7 JTAG_TCK_C2M JTAG clock A26 GND Ground, connect to carrier card ground plane A27 PU18_4p7 MODE0_C2M PS mode bit 0 A28 PU18_4p7 MODE1_C2M PS mode bit 1 A29 PU18_4p7 MODE2_C2M PS mode bit 2 A30 PU18_4p7 MODE3_C2M PS mode bit 3 A31 Reserved No connect on the SOM A32 Reserved No connect on
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Datei
ds3231.h
/* * ds3231.h * * Created: 09.12.2017 19:18:50 * Author: Vidit */ #ifndef DS3231_H_ #define DS3231_H_ // ************************************************************** // ******* RTC_ROUTINES HEADER FILE ***
in „i2c send data“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM3647-1.pdf
and off. The LM3647 automatically detects the presence of a © 2001 National Semiconductor CorporatiDS101318 www.national.com 4 6 3 2.0 Connection Diagram M L DS101318-2 Top View Order Number LM3647IM See NS Package Number M20B 2.1 PIN DESCRIPTIONS Pin No. Name I/O Description 1 SEL3 I Input to Select
in „Heizungssteuerung mit Funk-Temperaturfühler“ · Mikrocontroller und Digitale Elektronik ·
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Datei
bios.asm
seldsk_na: ld hl,0 pop af ret settrk: push af ld a,c out (16),a pop af ret setsec: push af ld a,c out (18),a pop af ret setdma: push af ld a,c out (20),a ld a,b out (21),a pop af ret read: ld a,1 out (22),a ld a,0 ret write: ld a,2 out (22),a ld a,0 ret sectran: ;translate sector bc using table at de, res
in „CP/M auf ATmega88“ · Mikrocontroller und Digitale Elektronik ·
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Datei
i2c.asm
include "m16def.inc" .equ twi_bit_rate = 0x42 .equ start = 0x08 .equ rstart = 0x10 .equ mt_sla_ack = 0x18 .equ mt_data_ack = 0x28 .equ mr_sla_ack = 0x40 .equ mr_data_ack = 0x50 .equ mr_data_nack = 0x58 .equ sla_w = 0x92 ;Adresse für DS1631 Write .equ sla_r = 0x93 ;Adresse für DS1631 Read .def data = r18
in „Problem mir TWI (Master Receiver Modus)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ureflow.pdf
1 2 3 4 5 6 D2 U1 +3V3 DS14W +5V +3V3 +3V3 VIN FB1 NCP1117 3 VI VO 2 VBUS D +3V3 N C2 U4 R14 R19 G R11 MAX6675ISA+T SW1 10K SW3 10K F1 D3 1 22uF 1.5K A 500mA DS14W C1 4 1 4 BTN_LEFT 1 4 BTN_RIGHT A 10uF / 25V VCC 2 3 2 3 J1 C4
in „Feedback Schaltplan STM32G0“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NTD4963N-D.PDF
C ISS 1035 Output Capacitance COSS V = 0 V, f = 1.0 MHz, = 12 V 220 pF GS DS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 8.1 Threshold Gate Charge Q G(TH) 1.2 V = 4.5 V, V = 15 V, I = 30 A nC Gate−to−Source Charge Q GS GS DS D 3.5 Gate−to−Drain Charge Q GD 3.5 Total Gate Charge QG(TOT) V GS= 10 V, DS = 15 V,DI = 30 A 16.2 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time d(ON) 12 Rise Time r 20 VGS = 4.5 V,DS = 15 V, ns Turn−Off Delay Time td(OFF) ID = 15 A, G = 3.0 W 14 Fall Time f 3 5. Pulse
in „Vergleichsmosfet NTD 4963N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPP120P04.pdf
-03, IPP120P04P4L-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance ID= f(V DS); Tj= 25 °C; SMD R DS(on)= (D ); Tj= 25 °C; SMD parameter: V GS parameter: V GS 640 20 -10 V -2.8 V -3 V -3.5 V -5 V 560 18 16 480 -4.5 V 14 400 W ] m 12 [ [) D320 ( - -4 V D 10 R 240 8 160 -3.5 V 6 -4 V 80 -3 V 4 -4.5 V -5 V -10V 0 2 0 1 2 3 4 5 6 0 40 80 120 -V [V] DS -D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I = f(V ); V = -6V R = f(T ); I = -100 A; V = -10 V; SMD D GS DS DS(on) j D GS parameter: T j 640 4.5 25 °C 560 -55 °C 175
in „Highside, FET wird heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
91055b.pdf
by Microchip. No licenses are con- veyed, implicitly or otherwise, under any intellectual property dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, rights. FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICDEM, PICDEM.net,
in „MC mit USB Interface“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DMOS_Analog_Switch_Introduction.pdf
353-0261 recommended for the output. Since C GD < C GS The circuit shown in Figure 4 exhibits the r DS(on) this causes less charge injection noise on the vs. analog signal voltage relationship shown in load. Figure 5. As can be seen from Figures 3a and 3b, the When the analog signal excursion is large
in „Gerät elektronisch abschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1302.pdf
Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial) DS1302Z 8-Pin SOIC (150-mil) DS1302ZN 8-Pin
in „genauer TIMER“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1302.pdf
Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial) DS1302Z 8-Pin SOIC (150-mil) DS1302ZN 8-Pin
in „RTC DS 1302“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF4905.pdf
Reverse Leakage -100 VGS = -20V Qg Total Gate Charge 180 ID= -38A Qgs Gate-to-Source Charge 32 nC V DS = -44V Qgd Gate-to-Drain ("Miller") Charge 86 V GS= -10V, See Fig. 6 and 13 d(on) Turn-On Delay Time 18 V DD = -28V tr RiseTime 99 D = -38A d(off) Turn-Off Delay Time 61 ns R G 2.5Ω f FallTime 96 RD=
in „P Kanal Mosfet schlägt immer wieder mal Durch.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
cm6206_2_3.pdf
Co or Line Syle Thick Da a Axis Co m m ent 1 1 Yelow Sold 1 DSP AnlrLevelA Left 1 1 Yelow So id 1 DS P Anr.LevelA Le t 1 2 Green Sold 1 DSP AnlrLevelB Right 1 2 Green So id 1 DS P Anr.LevelB Righ t 1 3 Cyan Sold 1 DSP AnlrLevelB Left 1 3 Cyan So id 1 DS P Anr.LevelB Le t Vs a-A-D Feq uencyR esponse.at2c
in „USB Stereo Eingang Mikro oder line-in“ · Mikrocontroller und Digitale Elektronik ·
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PDF
cm6206_2_3.pdf
Co or Line Syle Thick Da a Axis Co m m ent 1 1 Yelow Sold 1 DSP AnlrLevelA Left 1 1 Yelow So id 1 DS P Anr.LevelA Le t 1 2 Green Sold 1 DSP AnlrLevelB Right 1 2 Green So id 1 DS P Anr.LevelB Righ t 1 3 Cyan Sold 1 DSP AnlrLevelB Left 1 3 Cyan So id 1 DS P Anr.LevelB Le t Vs a-A-D Feq uencyR esponse.at2c
in „PC Sound-Hardware: CD-Laufwerk“ · PC Hard- und Software ·
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PDF
CM6206_Datasheet__v2.3_1_.pdf
Co or Line Syle Thick Da a Axis Co m m ent 1 1 Yelow Sold 1 DSP AnlrLevelA Left 1 1 Yelow So id 1 DS P Anr.LevelA Le t 1 2 Green Sold 1 DSP AnlrLevelB Right 1 2 Green So id 1 DS P Anr.LevelB Righ t 1 3 Cyan Sold 1 DSP AnlrLevelB Left 1 3 Cyan So id 1 DS P Anr.LevelB Le t Vs a-A-D Feq uencyR esponse.at2c
in „USB-Soundkarte zu einem Spannungslogger umbauen, wie die Eingänge schützen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM61.pdf
Thermal Resistance Thermal Time Constant Thermal Response in Junction to Air Still Air with Heat Sink DS012897-3 DS012897-4 DS012897-5 Thermal Response Thermal Response in Still in Stirred Oil Bath Quiescent Current with Heat Sink Air without a Heat Sink vs. Temperature DS012897-6 DS012897-8 DS012897-9
in „R8C/13 Software-Verständnisfrage“ · Mikrocontroller und Digitale Elektronik ·
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Datei
onewire.c
/* ds18b20 lib 0x02 copyright (c) Davide Gironi, 2012 Released under GPLv3. Please refer to LICENSE file for licensing information. */ #include <avr/interrupt.h> #include <stdio.h> #include <stdlib.h> #include
in „Delay mit Timer“ · Mikrocontroller und Digitale Elektronik ·
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PDF
at91rm9200-ek.pdf
TPK1 D15 D16 C3 PD14/TPK2 PC16/D16 U14 PD15 C2 PD15/TD0/TPK3 PC17/D17 R13 D17 PD16 F1 PD16/TD1/TPK4 PC18/D18 U15 D18 PD17 G2 PD17/TD2/TPK5 PC19/D19 T14 D19 PD18 G5 PD18/NPCS1/TPK6 PC20/D20 U16 D20 PD19 G1 T15 D21 PD20 H2 PD19/NPCS2/TPK7 PC21/D21 U17 D22 PD21 H4 PD20/NPCS3/TPK8 PC22/D22 T16 D23 PD22 H3 PD21
in „SD-RAM aus PC für AT91RM9200 (ARM9)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
in „Programm(A51) DS1820 auf DS18b20 Umstellen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
in „Programm(A51) DS1820 auf DS18b20 Umstellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfiz34n.pdf
On-Resistance 0.04 Ω VGS = 10V, D = 11A V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 6.5 S VDS = 25V, D = 16A 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 250 VDS = 44V, VGS= 0V, TJ= 150°C Gate-to-Source Forward Leakage 100 V = 20V
in „Mosfet Treiber Baustein“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_SJEP120R100_rev2.1.pdf
Parameter Symbol Conditions Unit Min Typ Max Off Characteristics Drain-Source Blocking Voltage BV DS V GS= 0 V, ID= 600 µA 1200 - - V V = 1200 V, V = 0 V, Tj = 25 C - 100 600 DS GS o V DS = 1200 V, VGS = 0 V, Tj = 150 C - 300 - VDS = 1200 V, VGS < -15 V, Total Drain Leakage Current IDSS o - 1 - µA Tj
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
UPA1721.pdf
applications of notebook computers. 1,2,3 ; Source 4 ; Gate 5,6,7,8 Drain FEATURES • Low on-resistance R DS(on)= 10.5 m MAX. (V GS = 10 V, I = 5.0 A) 6.0 ±0.3 1 4 R DS(on)= 14.0 m MAX. (V GS = 4.5 V, I = 5.0 A) 4 5.37 MAX. 4.4 0.8 . 1 R DS(on)= 17.0 m MAX. (V GS = 4.0 V, D = 5.0 A) X . . iss iss M + – • Low
in „RC-Steller Kontronik Smile 30-6-12 Bestückung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NL6448AC33-29.pdf
Least Significant Bit MSB : Most Significant Bit 15 G2 Green data 16 G3 Green data 17 G4 Green data 18 G5 Green data (MSB) Data Sheet EN0439EJ1V0DS00 7 NL6448AC33-29 Notes 1. V CC: All VC terminals should be connected to 3.3 V or 5.0 V. 2. DE: DE/Fixed mode select is as follows. Data enabled signal =
in „[S] Leute die eine "Grafikkarte" für uC bauen wollen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ThermometerSabine1.2.bas
'************************************************* '* Thermometer,Anzeige mit Schrittmotoren '* DS18S20 als Temperatursensor '************************************************* 'Verbesserungen: '"Innen" und "Aussen"-Messung 'Min und Max-Anzeige für Aussentemperatur 'Timergesteuert 24Std Messwertspeicher
in „Atmega8 Thermometer mit Schrittmotoranzeige“ · Projekte & Code ·
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Datei
ThermometerGabi1.2.bas
'************************************************* '* Thermometer,Anzeige mit Schrittmotoren '* 2x DS18S20 als Temperatursensor '************************************************* 'Verbesserungen: '"Innen" und "Aussen"-Messung 'Min und Max-Anzeige für Aussentemperatur 'Timergesteuert 24Std Messwertspeicher
in „Atmega8 Thermometer mit Schrittmotoranzeige“ · Projekte & Code ·
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Datei
heatgrips.bas
Then Delta = Delta + Temp_rain Temp_feel = Ds1820 - Delta Temp_feel = Temp_feel - Offset If Temp_feel < Mint Then Temp_feel = Mint If Temp_feel > Maxt Then Pwm0a = 0 Zeige7seg 15 Else Pwm0a = Skalier(255) Anzb = Skalier(9) Zeige7seg Anzb End If Loop 'zurück End 'end program Init_all: Disable Interrupts Neustart = 0 Geschw = &H7FFF Wait 15 Ds1820 = Readds1820() Temp_feel = Ds1820 - offset If Temp_feel < Maxt Then Temp_ref = Maxt Goto Vorwaerm End If Enable Interrupts Return Vorwaerm: Delta = Temp_ref - temp_feel Delta = Delta / 10 Pwm0a =
in „Optimierung Bascom Code“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HOA1405_1.pdf
Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_074.ds4 100 100 90 A Pulsed s m 80 µ t 70 condition e e 60 T = 80°C i r A t c 50 s 10 d 40 T A 25°C o a 30 s r e F 20 TA= -40°C R 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000
in „Schlechte Signale mit CNY 70“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HOA1405_1.pdf
Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_074.ds4 100 100 90 A Pulsed s m 80 µ t 70 condition e e 60 T = 80°C i r A t c 50 s 10 d 40 T A 25°C o a 30 s r e F 20 TA= -40°C R 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000
in „Minimalbestromung CNY70 Reflexkoppler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HOA1405_1.pdf
Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_074.ds4 100 100 90 A Pulsed s m 80 µ t 70 condition e e 60 T = 80°C i r A t c 50 s 10 d 40 T A 25°C o a 30 s r e F 20 TA= -40°C R 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000
in „Algorithmus für Linefollower mit 5 Sensoren“ · Mikrocontroller und Digitale Elektronik ·
