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PDF
MAC97A8.PDF
/ s T2− G− − 50 A/ s T2− G+ − 10 A/ s I gate current (peak value) t = 2 s max − 1 A GM V GM gate voltage (peak value) t = 2 s max 5 V P GM gate power (peak value) t = 2 s max − 5 W P G(AV) average gate power T case 80
in „µC 5V -> Triac 16VAC schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mcr22.pdf
Blocking Region Reverse Avalanche Region (off state) Anode – CURRENT DERATING ) C ⋅ ( E R R T T R R P P M M140 T 140 T N S I 120 C M E100 A 100 B L W dc A 80 O 60 α = 180⋅ W 60 A α = CONDUCTION L dc M ANGLE A 40 U U α = 180⋅ X 20 I 20 A 0 A 0 α = CONDUCTION ANGLE , 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
in „TV: Bauteil ?? MCR22-8“ · Mikrocontroller und Digitale Elektronik ·
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PDF
650200588_um.pdf
22020 Gaggino Faloppio [CO] - Italy Technical features are subject to change without notice. AUR°EL S.p.A does not assume responsibilities for any damage caused by the device’s misuse. AUR°EL S.p.A. Via Foro dei Tigli, 4 - 47015 Modigliana [FC] – ITALY Rev. A, 16-12-2002 Tel.: +390546941124 – Fax: +390546941660
in „Funkübertragung mit AUREL XTR-434“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Sheet1.pdf
1 2 3 4 5 6 7 8 NLSA NL2A NL3A NLS4A T3 P3 0 P3 PIT101 PIT102 PIT201 PIT2022 PIT301 PIT302 PIT401 PIT402 A 2N7002 GND 2N7002 GND 2N7002 GND 2N7002 GND A 12 D1D P0 D2D 32CD3 I2 D4D 02D5D5 D2 D6D6 2 D7D7 D2 D8D8 P2 D9D9 I2 D1010
in „Was denkt ihr, ist das noch routbar? (Angefangene Platine)“ · Platinen ·
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PDF
Sheet12.pdf
1 2 3 4 5 6 7 8 NLSA NL2A NL3A NLS4A T3 P3 0 P3 PIT101 PIT102 PIT201 PIT2022 PIT301 PIT302 PIT401 PIT402 A 2N7002 GND 2N7002 GND 2N7002 GND 2N7002 GND A 12 D1D P0 D2D 32CD3 I2 D4D 02D5D5 D2 D6D6 2 D7D7 D2 D8D8 P2 D9D9 I2 D1010
in „Was denkt ihr, ist das noch routbar? (Angefangene Platine)“ · Platinen ·
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PDF
TSSP4P38-Datasheet.pdf
width, are evaluated using this application. Example of a signal pattern: 500 ms 120 ms, 38 kHz Optical signal Response of the TSSP4P38 (strong reflection) Response of the TSSP4P38 (weak reflection) Example for a sensor hardware: IR Receiver 120 TSSP4P38 Receiver: TSSP4P3800 ) 100 Reflective object: paper DIN A4 m t d 80 Emitter Separation to avoid W TSAL6200 crosstalk by stray light inside e the housing u 60 Emitter current: 10 mA P u 40 u There should be no common
in „Max. Strom für IR-LED für NEC-Code“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SFH_3410_EN.pdf
typ. 6 nA VCE = 5 V; E = 0 max. 50 nA Collector-emitter saturation voltage ) VCEsat typ. 100 mV I = I X 0.3; E = 20 lx; Std. Light A C PCE,min v Capacitance C CE typ. 3.4 pF V = 0 V; f = 1 MHz; E = 0 CE 5
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Bild
Schaltplan eines CY7C65632 Mikrocontrollers
U$1 CY7C65632 VCC_A 5*3 DD-1 3 FT600_D_N VCC_D 27 DD+1 4 FT600_D_P 25 OVR#1 28 VREG 10 XIN 6 DD-2 FT2232H_D_N 11 XOUT 7 DD+2 FT2232H_D_P 24 OVR#2 17 RESET 12 DD-3 23 SELFPWR 13 DD+3 18 TEST/I2C_SCL OVR#3 20 PWR#/I2C_SDA
in „USB-Hub funktioniert nicht.“ · Mikrocontroller und Digitale Elektronik · · Schaltpläne
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PDF
Liste_Bauteile_Halbleiter_aus_Restposten.pdf
Schottky- Gebraucht / 16 ZETEX ZLLS400TA ca 2600 Angebrochen O934 Offene Rolle Diode (40V, 1.050,00 € 0.4A, Low Vf) 290,00 € MSL 17 onsemi M74VHC1GT126DF1G ca 9000 Volle Rollen Ende 2017 / Mitte 2018 nicht 1 (unlimited 1.350,00 € verschweißt shelf life) 330,00 € 330 nF (330.000 pF Gebraucht / 18 AVX (Kyocera
in „Großes Bauteil-Konvolut (SMD, ICs, Dioden, Steckverbinder) – Einzelkauf oder Gesamtpaket“ · Markt ·
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PDF
irl2203n.pdf
Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL2203N 6000 15 V GS = 0V, f = 1MHz D = 60A C iss= Cgs+ Cgd , Cds SHORTED ) 5000 C rss= Cgd V VDS = 24V C oss= Cds+ Cgd e 12 VDS = 15V g F l ( 4000 V e e 9 n C iss r i 3000 o a S p t C e 6 , 2000 C oss a C G , 1000 G 3 V FOR TEST CIRCUIT C rss
in „Saito Pro Charger Batterieladegerät - Mikrocontroller ATmel ATTINY26L defekt?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
infineon-irf1010e-mosfet.pdf
Current MOSFET symbol (Body Diode) ––– ––– 84 showing the A G ISM Pulsed Source Current integral reverse (Body Diode ––– ––– 330 p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, S = 50A, GS = 0V trr Reverse Recovery Time ––– 73 110 ns TJ
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
0900766b8144620c_1_.pdf
TYPICALTEMPERATURE COEFFICIENT OF POWER DISSIPATION = 2.2%/ o 1,000 HOURSAT = 85 C 1.0 MAX ATT = 85 C 0.8 A 0.5 k 0.6 V R k P 0.4 E 0.4 ) S P ( R W S N V MAX ATT = 25 C ( R0.3 T D 0.2 A O V P T T E S R I A I F 0.1 S R 0.2 D O TYP ATT = 25 C I F E 0.08 A R O W 0.06 E 0.1 P W 0.04 P 80 90 100 110 0 0 10 100
in „Hochspannung überprüfen“ · Analoge Elektronik und Schaltungstechnik ·
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4088fb.pdf
L T T LD P N C L O E E S I 1 3 1 8 9 7 B 3 T E T G 4 S 3 O A B R D V G C L O O S L + – A V –+ L 3 A L D V M E I 0 5 W I D 1 + – P 3 C D m / N B E 0 A C X 1 IB C 5 0 / G N G R A R R T G IB P 6 U O A C T C N N Y 1 T T E N N T – + O C B C D V G 1 . + 0 V 3 – ++ A E 2 R R I D 4 V D G N N L U I O A T I E N O L L G D E G R L 1 Q A T N W E O C S R P A V D 1 T + U S F – 6 O T 4 N U I R P I L + – N I T L P D G E R V U L R R N P L 0 S V U C E M B 1 A C R T N D E C U
in „[EAGLE Anfänger] Package finden oder herstellen“ · Platinen ·
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eeprom_24lc65_i2c.pdf
(0) DATA n DATA n + 7 T MASTER R O T P SDA LINES 0 0 0 P A A A A A BUS C C C C C ACTIVITY: K K K K K FIGURE 4-3: CURRENT ADDRESS READ S BUS ACTIVITY T CONTROL S MASTER A BYTE DATA n T R O T P SDA LINE S P A N BUS ACTIVITY C O K A C K FIGURE 4-4: RANDOM READ S S T T CONTROL WORD A CONTROL S A WORD R DATA n T R BYTE ADDRESS (1) ADDRESS (0) T BYTE O T P SDA LINE 0 0 0 P S S A A A A N BUS C C C C O ACTIVITY K K K K A C K FIGURE 4-5: SEQUENTIAL READ S T BUS ACTIVITY CONTROL O MASTER
in „64K EEPROM 24LC65 Adressierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
21058F.PDF
ADDRESS (0) DATA n DATA n+7 O MASTER T P SDA LINE 0 0 0 A A A A A BUS C C C C C ACTIVITY: K K K K K FIGURE 5-3: CURRENT ADDRESS READ S S t Bus Activity: Control t Master r Byte Data n o p t SDA Line Bus Activity A N O C K A C K FIGURE 5-4:
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Datei
KiCadLib.py
60 H V C C ALIAS ET7272 DS26LS31 AM26LS31 $FPLIST SO16E SO16N 16DIP300 16DIP-ELL300 $ENDFPLIST DRAW P 3 0 1 0 225 0 -250 200 -250 200 N P 4 0 1 0 225 0 -250 -200 -250 -200 -250 -200 N P 3 0 1 0 -250 -200 -250 200 -250 200 N X Vcc 16 -175 475 300 D 60 60 1 1 B X EN/VCCB 4 -50 475 350 D 60 60 1 1 I X A
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
TC4426.pdf
2003 Microchip Technology Inc. TC4426/TC4427/TC4428 Note: Unless otherwise indicated, T A = +25ºC with 4.5V ≤ V DD ≤ 18V. 60 60 2 MHz 1000 pF VDD = 18V VDD = 18V 50 50 2200 pF 900 kHz A 40 A 40 ( m 100 pF Y (Y P30 600 kHz L30 P P S U I 20 IS20 200 kHz 10 10 20 kHz 100 1000 10,000 0 10 100
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ads1220.pdf
1.00 600 IDAC = 1000 µA 0.75 IDAC = 500 µA 500 ) IDAC = 100 µA ( 0.50 o 400 E 0.25 ) g µ i 0.00 (D00 t V a IA M–0.25 200 C D–0.50 Gain = 64, 128 I 100 –0.75 Gain = 1 to 16 –1.00 0 PGA Disabled –40 –20 0 20 40
in „ADS1220 Temperatur SPI“ · Mikrocontroller und Digitale Elektronik ·
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1407fa.pdf
A 3 9 I D O D 2 S 2 S E 2 E 4 8 N D N D 2 C 2 O S 3 S 5 7 I D D O D 2 E R 2 V R R 4 W R 6 O E D A P D A 2 T A 2 H A M 5 T T 7 D 5 O D B O D I 2 F 2 2 F 4 U 6 1 T 8 1 4 N D P D 2 G 2 I O 7 O 9 L A D D A
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PDF
16151fas.pdf
MURATA LQH3C4R7M24 (814) 237-1431 D1: MOTOROLA MBR0520 (800) 441-2447 50 0.1 1 10 100 LOAD CURRENT (mA) 1615/-1 TA03a 1-Cell Li-Ion to 3.3V SEPIC Converter 4-Cell to 5V SEPIC Converter C3 C3 L1 1µF D1 L1 1µF D1 10µH V 10µH 5V VIN 3.3V IN 2.5V TO 4.2V 5 1 50mA 3V TO 6V 5 1 40mA 4.7pF 4.7pF VIN SW L2 VIN
in „LT1615, Spannungsspitze beim Einschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
16151fas.pdf
MURATA LQH3C4R7M24 (814) 237-1431 D1: MOTOROLA MBR0520 (800) 441-2447 50 0.1 1 10 100 LOAD CURRENT (mA) 1615/-1 TA03a 1-Cell Li-Ion to 3.3V SEPIC Converter 4-Cell to 5V SEPIC Converter C3 C3 L1 1µF D1 L1 1µF D1 10µH V 10µH 5V VIN 3.3V IN 2.5V TO 4.2V 5 1 50mA 3V TO 6V 5 1 40mA 4.7pF 4.7pF VIN SW L2 VIN
in „[V] 8St. DC/DC Micropower Step-Up DC/DC Converters LT1615-1 (12€)“ · Markt ·
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PDF
MC74VHC1GT66-D.pdf
79,600 9.4 L 1 A 120 37,000 4.2 M O 1 10 100 1000 130 17,800 2.0 N TIME, YEARS 140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 3 MC74VHC1GT66 DC ELECTRICAL CHARACTERISTICS
in „Widerstand nötig?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
diodesgroupbodymarking.pdf
Vishay Vishay General Semiconductor AXIAL MARKING Package: DO-204AL, DO-204AC, DO-201AD, GP20, 1.5KE, P600 Examples: Polarity Cathode Cathode band band Vishay Part 1.5KE15A part number P6KE22 number GP15M 1521X Logo / SB340 1521X date co®e 521X date code 1521X 1N6275A JEDEC part number Part number / logo
in „Identifikation SMD Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
snubber.pdf
a secondary leakage inductance of 0.133mH and an inter-winding capacitance of 550pF. A 1N4004 diode measured about 45pF (data sheet specifies 50pF). As I will show later the transformer and diode capacitances
in „Motor mit Triac schalten!“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TLS810B1xxV33.pdf
Values Unit NoteorTest Condition Number Min. Typ. Max. Output VoltagePrecision V Q 3.23 3.30 3.37 V 50 µA ≤IQ≤ 100 mA, P_5.1.1 4 V ≤V ≤ 28V I Output VoltagePrecision V 3.23 3.30 3.37 V 50 µA ≤I ≤ 50 mA, P_5.1.2 Q Q 4 V ≤VI≤ 42V OutputCurrent Limitation IQ,lim 110 190 260 mA 0 V ≤VQ≤V Q,nom-0.1 V P_5.1.3 Line Regulation ΔV Q,line – 1 20 mV Q = 1 mA,6 V ≤ I ≤ 32V P_5.1.4 steady-state Load Regulation ΔV Q,load -20 -1 – mV VI= 6V, P_5.1.5 steady-state 50 µA ≤I ≤ 100 mA Q Dropout Voltage 1) V dr – 250 650 mV Q = 100 mA P_5.1.6 V =V -V dr I Q Ripple
in „3.3V uC LDO mit UVLO, Batterie/Solarbetrieb“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOC3021M.pdf
2. On-State Characteristics 1 Figure 1. LED ForwardVoltage vs. Forward Current X 1.8 800 M , M 1.7 600 O A 400 C ) 1.6 ( 3 ( T 0 G - 200 2 T 1.5 T X O E M V 1.4 R 0 R TA= -55 C U — A E R 1.3 A -200 6 F TA= 25 C S - -F N -400 P V 1.2 o O i TA= 100 C n -600 D 1.1 I P -800 1.0 -3 -2 -1 0 1 2 3 R 1 10 100
in „Blitzgerät an Mikrocontroller“ · Mikrocontroller und Digitale Elektronik ·
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LTC4151.pdf
A P S ADDRESS W A COMMAND A DATA A DATA A P 1 1 0 a3:a0 0 0X X X X X b2:b0 b7:b0 0 1 1 0 a3:a0 0 0X X X X X b2:b0 b7:b0 0 b7:b00 4151 F03 4151 F04 FROM MASTER TO SLAVE A: ACKNOWLEDGE (LOW) W: WRITE BIT
in „DC Wattmeter Leistungsmesser selber bauen - Eigenbau - low cost Assembler ATmega SA56“ · Projekte & Code ·
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PDF
HCF4069UB.pdf
Current. 7/12 HCC/HCF4069UB Plastic DIP14 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A 8/12 HCC/HCF4069UB Ceramic DIP14/1 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015 e3 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N 10.3 0.406 P 7.8
in „CD4049 in rauscharm, gibts das?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ACT2803_Data_Sheet.pdf
PINS ACT2803QJ-T 4.20V -40°C to 150°C QFN55-40 40 PIN CONFIGURATION 4 3 2 1 T L L L L 4 S C D D D D D P M Y I T E E E E E D D H R P L L L L L CSN LED3 CSP LED2 CSP LED1 VOUT PB VOUT AGND ACT2803 VIN VREG VIN TH OVGATE ICST OVSENS PGND BATN SCL CBD A D B T T S P C D N S S S A A T T T S G H B B B B B P TOP
in „ACT2803 dual cell lipo charger - Problem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MC14006B.pdf
20 — 600 ÎÎÎÎTotal Supply Current**† IT 5.0 ÎÎÎÎÎÎÎÎÎÎÎIT= (1.3 A/kHz) f DDI Adc (Dynamic plus Quiescent, 10 IT= (2.6 A/kHz) f DDI ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Per Package) 15 IT= (3.9 A/kHz) f DDI ÎÎÎÎÎÎÎ
in „Platine Bedieneinheit mit Oszi durchmessen“ · Platinen ·
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PDF
XPort_PB.pdf
Embedded XPort Device Server BUILD NETWORK CONNECTIVITY INTO YOUR PRODUCTS, QUICKLY AND SIMPLY XPort is a compact, integrated solution to web-enable any device with serial capability. By incorporating XPort to a product design, manufacturers can offer network connectivity as a standard feature within weeks
in „[V] 1Stück neues Lantronix_XPORT_Seriell- LAN Modul (18€)“ · Markt ·
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PDF
FCPF11N60B.pdf
Semiconductor Corporation Rev. B, March 2004 F C Electrical Characteristics T = 25°C unless otherwise noted P C Symbol Parameter Test Conditions Min Typ Max Units 1 1 N Off Characteristics 6 0 BV Drain-Source Breakdown Voltage V GS = 0 V,DI = 250 µA, J = 25°C 600 -- -- V F DSS V GS = 0 V,DI = 250 µA,JT = 150°C -- 650 -- V C ∆BV DSS Breakdown Voltage Temperature Coef- I = 250 µA, Referenced to 25°C P / ∆T J ficient D -- 0.6 -- V/°C F 1 BV Drain-Source Avalanche Breakdown V = 0 V, I = 11 A -- 700 -- V 1 DS Voltage GS D N I V = 600 V, V = 0 V 6 DSS Zero Gate Voltage Drain Current
in „Kühlkörper Dimensionieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Jahresrundspruchplan_2018.pdf
R U N D S P R U C H P L A N 2 0 1 8 Tag MEZ/ Station Frequenz Mode Relais Art des Tag MEZ/ Station Frequenz Mode Relais Art des MESZ (MHz) Rundspruchs MESZ (MHz) Rundspruchs Deutschland- DARC-Amateurfunkzentrum
in „Junge Menschen für den Amateurfunk begeistern“ · HF, Funk und Felder ·
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PDF
irlz34npbf.pdf
Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLZ34NPbF 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= Cgs + C gd, C ds SHORTED ) 1200 C rss= C gd ( ▯VDS = 44V Ciss C oss= C ds+ C gd e 12 ▯VDS = 28V g F 1000 l ( o e e n 800 r 9 t u c Coss S p 600 o a - 6 , t C G 400 , C▯rss S 3 VG 200 FOR TEST
in „MOSFET defekt (evtl. durch Ohmmeter)?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CoolRoadRunnerIII-HB-2.pdf
does not supply the 3.3 Volts pins to the PC/104-Plus bus. 1.7 PC/104 Bus Interface The PC/104 bus is a modification of the industry standard (ISA) PC bus specified in IEEE P996. The PC/104 bus has different mechanics than P966 to allow the stacking of modules. The main features are: - Supports programmable
in „Embedded PC erkennt keine Festplatte“ · PC Hard- und Software ·
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PDF
10a05_ser.pdf
load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) SYMBOL 10A05 10A1 10A2 10A4 10A6 10A8 10A10 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage
in „Diode kühlen, wie?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Handy-Netzteile-Vergleich.pdf
5V 800mA p 0 S , SPS-800 Mini o 0 Samsung 4,75V 550mA V ATADS30EBC A 0 0 Sony Ericsson 5V 550mA 0 EP300 Huawei 5V 1A 0 HW-050100E1W 6 0 Phihong (Acer) 5,35V 2A PSAI10R-050Q 4 , 0 2 , 0 0 ,0 10 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0 mA Seite 1
in „Messreihe 5V USB Netzteile“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RBS17707-SN65HVD230-CAN-Board-Datasheetsiyyp0AhGRhw5g.pdf
= 3.6 V T 80 T l VCC = 3 V l 140 e 70 e VCC = 3.3 V D D i i 130 a 60 V CC = 3.3 V a V = 3 V a a CC p 50 V CC = 3.6 V p 120 r r P P i 40 o 110 - - t - w 30 h o i 100 r 20 r v v r r 90 D 10 D – – L 0 H 80 t –55 –40 0 25 70 85 125 t –55 –40 0 25 70 85 125 TA– Free-Air
in „PCB Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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PDF
P-MOSFETsi3445dv.pdf
Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 25 20 V ( 0.2 c ) 15 i ID= 250 µA ( a r V w t o S P 10 V 0.0 5 - 0.2 0 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 T J Temperature (°C) Time (s) Single Pulse Power Threshold Voltage 2 1 Duty Cycle = 0.5 n i n e r n 0.2 T d Notes: i p c I 0.1 f l0.1 PDM E m e e 0.05 t1 l T t2 a 1. Duty Cycle, D = r 2 N 0.02 2. Per Unit BasethJA 106 °C/W 3. JM -AT = DM thJAt) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10-1 1 10 100 600 Square
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf7389.pdf
66 T J 25°C, IF=1.7A, di/dt = 100A/µs N-Ch — 58 87 P-Channel Q rr Reverse Recovery Charge P-Ch — 42 63 nC T = 25°C, I = -1.7A, di/dt = 100A/µs J F Notes: Repetitive rating; pulse width limited by max. junction temperature
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
66 T J 25°C, IF=1.7A, di/dt = 100A/µs N-Ch — 58 87 P-Channel Q rr Reverse Recovery Charge P-Ch — 42 63 nC T = 25°C, I = -1.7A, di/dt = 100A/µs J F Notes: Repetitive rating; pulse width limited by max. junction temperature
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
66 T J 25°C, IF=1.7A, di/dt = 100A/µs N-Ch — 58 87 P-Channel Q rr Reverse Recovery Charge P-Ch — 42 63 nC T = 25°C, I = -1.7A, di/dt = 100A/µs J F Notes: Repetitive rating; pulse width limited by max. junction temperature
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MAX3355E.pdf
1µF, I LOAD = 8mA 100 ms X OFFVBUS Propagation Delay 6 µs A Comparator Propagation Delay 3 µs Time to Exit Shutdown 50 µs M Time to Shutdown 1 µs ID_OUT Rise Time C ID_OUT = 50pF 10 ns ID_OUT Fall Time C ID_OUT = 50pF
in „PHILIPS VP5500 VoIP Telefon bei Pollin“ · Mikrocontroller und Digitale Elektronik ·
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PDF
preis2024.pdf
Digitalmultimeter ISO 102,54 6673 Kranz DS03350 Digital Speicheroszilloskop ISO 269,06 6674 Kurt Lindenblatt 600V / 1A Kriechstromfestigkeits-PG ISO 86,87 7565 Kyoritsu 2002 P Digitale Stromzange ISO 56,70 7678 Kyoritsu 777 Strommesszange ISO 86,87 6675 Lambda 552 Stroboskop ISO 73,59 7561 Leadar LBO308S Oszilloskop
in „PeakTech 365eff“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004_IR.pdf
D ––– ––– 130 (Body Diode) A showing the ISM Pulsed Source Current integral reverse G ––– ––– 520 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, S = 78A, GS = 0V trr Reverse Recovery Time –
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004_IR.pdf
D ––– ––– 130 (Body Diode) A showing the ISM Pulsed Source Current integral reverse G ––– ––– 520 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, S = 78A, GS = 0V trr Reverse Recovery Time –
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SIOV_Calculation_2.pdf
100 kHz. See VR the effect of HF alternating current on the varistor type 2381 595 52516; C = 480 pF drawing. 600 V1 103 400 V (V) VO 200 50 Hz 100 Hz 1 kHz 10 kHz 102 00 2 4 6 8 10 I (A) Influence on varistor when V i1 1000 V (R = 250 Ω) 100 kHz 10 -2 -1 EQUIVALENT CIRCUIT MODEL 10 10 1 I (mA) 10
in „Varistor dimensionieren“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Timer0.asm
gpio ;Alle LEDs an movwf gpio_copy ;Kopie vom GPIO Port btfsc gpio,5 ;Schnell o. Langsam ? goto PWM_A ;Kurze Schleife goto PWM_B ;Lange Schleife PWM_A: incf pwm,1 ;PWM um 1 erhöhen btfss pwm,3 ;Schleife: 8x durchläufe? goto LED0 ;NEIN, LEDs und Timer0 überprüfen clrf pwm ; goto up_down0 ;JA, RGB-Reg
in „PIC 16F872 Initialisierung. Wie gehts richtig?“ · Mikrocontroller und Digitale Elektronik ·
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74HC164_STM.pdf
SWITCHINGCHARACTERISTICS TEST. 7/12 M54/M74HC164 Plastic DIP14 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A 8/12 M54/M74HC164 Ceramic DIP14/1 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015 e3 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N 10.3 0.406 P 7.8
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211-1-PLEXIGLAS-GS-XT-de.pdf
Baustoffklasse DIN 4102 B2 B2 B2 - BS 476, Teil 7 + 6 Class 3 Class 3 - - BS 2782 TP (b) TP (b) - - Methode 508 A E E E - DIN EN 13501 Allgemeines Bauaufsichtliches P-K017 / 11.06 P-K018 / 02.07 P-K019 / 05.07 - - Prüfzeugnis ISO 306, Vicat-Erweichungstemperatur 115 103 102; 100; 100; 97 °C Methode B 50 Formbeständigkeit
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